CN104779815A - SiC MOSFET (metal-oxide-semiconductor field effect transistor) intelligent power integration module capable of replacing IGBT (insulated gate bipolar transistor) module - Google Patents
SiC MOSFET (metal-oxide-semiconductor field effect transistor) intelligent power integration module capable of replacing IGBT (insulated gate bipolar transistor) module Download PDFInfo
- Publication number
- CN104779815A CN104779815A CN201510155623.0A CN201510155623A CN104779815A CN 104779815 A CN104779815 A CN 104779815A CN 201510155623 A CN201510155623 A CN 201510155623A CN 104779815 A CN104779815 A CN 104779815A
- Authority
- CN
- China
- Prior art keywords
- power
- sic mosfet
- driving chip
- terminal
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a SiC MOSFET (metal-oxide-semiconductor field effect transistor) intelligent power integration module capable of replacing an IGBT (insulated gate bipolar transistor0 module. The SiC MOSFET intelligent power integration module comprises a base board, an AC power terminal, an input terminal, a first control terminal and a second control terminal, wherein a SiC MOSFET power unit, a bus capacitor, a first drive circuit and a second drive circuit are integrated on the base board. With the adoption of the SiC MOSFET intelligent power integration module, the parasitic inductance of a drive loop and a power loop can be effectively reduced, vibration of the power loop and the drive loop can be reduced, and the working reliability and the working efficiency of a semiconductor switch can be improved.
Description
Technical field
The invention belongs to electric and electronic technical field, relate to a kind of power integration module, be specifically related to a kind of SiC MOSFET intelligent power integration module of replaceable IGBT module.
Background technology
Si IGBT device, due to its excellent on state characteristic, is widely used in power conversion circuit, such as Electric Traction, air-conditioning etc.But IGBT device switching speed is not high, and there is reverse-recovery problems in the diode of reverse parallel connection, causes switching loss very large, which has limited the lifting of the efficiency of power conversion circuit, on the other hand, also limit the raising of switching frequency.Low switching frequency makes the volume of passive device in power inverter (such as electric capacity and inductance) very large, and this is by the volume of increase power inverter, weight and cost.SiC MOSFET element is compared to IGBT device, and under equal voltage withstand class, because the conducting resistance of SiC MOSFET is little, and turn off process does not have the problem of tail currents, so switching loss can be much little under equal condition of work.SiC cut-in voltage is little, so can both realize low conduction loss in wide-range current from small area analysis to big current.In addition because SiC MOSFET element does not have the problem of tail currents, so its turn-off power loss is very little.Research shows, can increase substantially switching frequency, maintain good efficiency index simultaneously with SiC device substitute I GBT device.
But SiC device brings a larger challenge to user in the application.The raster data model electric charge (Qg) of SiC device is very little, and junction capacitance is also very little, and therefore switching speed is more faster than IGBT device.Good one side to improve switching frequency, but bad one side to be exactly the curent change of switching process breaker in middle branch road very fast, di/dt is very high.Owing to inevitably there is stray inductance in loop of power circuit, when electric current changes rapidly, very high peak overvoltage can be produced at switching device two ends.Light then cause circuit erroneous action, electromagnetic interference exceeds standard, heavy then cause device breakdown to be damaged.The switching speed that SiC device is very high cause the parasitic oscillation in its switching process and overvoltage phenomenon obvious more than IGBT device.On the other hand, the parasitism concussion of the driving drive circuit of SiC device is also very important.For the device of Creat Company of the U.S., its threshold voltage only has 2.2V, and when device turns off, the vibration of drive circuit is easy to cause misleading of device.By contrast, the threshold voltage of IGBT device is about 5.5V.For this problem, the stray inductance of SiC device grid return and the output impedance of drive circuit must strictly control.These factors add the difficulty in SiC device application, hinder the extensive use of SiC device.
Traditional IGBT module only includes one or more pairs of IGBT device usually, thus forms one or more brachium pontis, easy to use, and has good heat dispersion, reduces the difficulty of application.In actual applications, because bus Absorption Capacitance and drive circuit are arranged in module-external, cause drive circuit stray inductance and loop of power circuit stray inductance circuit comparatively large, this is unacceptable for SiC device, so this kind of integrated and inapplicable scheme is in SiC device.
Summary of the invention
The object of the invention is to the shortcoming overcoming above-mentioned prior art, provide a kind of SiC MOSFET intelligent power integration module of replaceable IGBT module, this module can effectively reduce the stray inductance of drive circuit and loop of power circuit, reduces the vibration of loop of power circuit and drive circuit.
For achieving the above object, the SiC MOSFET intelligent power integration module of replaceable IGBT module of the present invention comprises base plate, AC power terminal, input terminal, the first control terminal and the second control terminal, base plate is integrated with SiC MOSFET power cell, bus capacitor, the first drive circuit and the second drive circuit;
First drive circuit comprises the first accessory power supply, first driving chip and the first drive level change-over circuit, second drive circuit comprises the second accessory power supply, second driving chip and the second drive level change-over circuit, first control terminal is connected with the control end of the first accessory power supply and the input of the first drive level change-over circuit, second control terminal is connected with the control end of the second accessory power supply and the input of the second drive level change-over circuit, the power interface of the first driving chip is connected with the first accessory power supply, the input of the first driving chip is connected with the output of the first drive level change-over circuit, the power interface of the second driving chip is connected with the second accessory power supply, the input of the second driving chip is connected with the output of the second drive level change-over circuit, the output of the first driving chip and the output of the second driving chip are connected with the control end of brachium pontis upper in SiC MOSFET power cell and the control end of lower brachium pontis respectively,
The input of described SiC MOSFET power cell is connected with input terminal, and the output of SiC MOSFET power cell is connected with AC power terminal, and bus capacitor is parallel to the two ends of SiC MOSFET power cell bridge arm.
Described SiC MOSFET power cell is half-bridge power module, full bridge power module or three phase full bridge power model.
Described base plate is also integrated with the temperature detecting unit for detecting semiconductor device working temperature, and temperature detecting unit is connected with temperature detection terminal.
The present invention has following beneficial effect:
The SiC MOSFET intelligent power integration module of replaceable IGBT module of the present invention is by being integrated on same base plate by SiC MOSFET power cell, bus capacitor, the first drive circuit and the second drive circuit, reduce the area of loop of power circuit and drive circuit, thus reduce the stray inductance of drive circuit and loop of power circuit, reduce the vibration of loop of power circuit and drive circuit, thus guarantee the safety of SiC device, and then reduce the application difficulty of SiC device.Simultaneously the present invention is completely compatible with existing IGBT with the binding post of external circuits, can direct substitute I GBT module, is conducive to promoting the use of of SiC device, simplifies the design work of user application simultaneously, the cost that saving device upgrade is transformed.
Accompanying drawing explanation
fig. 1for structural representation of the present invention
figure.
Wherein, 1 be temperature detecting unit for SiC MOSFET power cell, 2 be the first accessory power supply, 3 be the first driving chip, 4 be the first drive level change-over circuit, 5 be the second accessory power supply, 6 be the second driving chip, 7 is the second drive level change-over circuit, 8,9 be bus capacitor.
Embodiment
Below in conjunction with
accompanying drawingthe present invention is described in further detail:
Reference
fig. 1the SiC MOSFET intelligent power integration module of replaceable IGBT module of the present invention comprises base plate, AC power terminal, input terminal, the first control terminal and the second control terminal, base plate is integrated with SiC MOSFET power cell 1, bus capacitor 9, first drive circuit and the second drive circuit, first drive circuit comprises the first accessory power supply 2, first driving chip 3 and the first drive level change-over circuit 4, second drive circuit comprises the second accessory power supply 5, second driving chip 6 and the second drive level change-over circuit 7, first control terminal is connected with the control end of the first accessory power supply 2 and the input of the first drive level change-over circuit 4, second control terminal is connected with the control end of the second accessory power supply 5 and the input of the second drive level change-over circuit 7, the power interface of the first driving chip 3 is connected with the first accessory power supply 2, the input of the first driving chip 3 is connected with the output of the first drive level change-over circuit 4, the power interface of the second driving chip 6 is connected with the second accessory power supply 5, the input of the second driving chip 6 is connected with the output of the second drive level change-over circuit 7, the output of the first driving chip 3 and the output of the second driving chip 6 are connected with the control end of brachium pontis upper in SiC MOSFET power cell 1 and the control end of lower brachium pontis respectively, the input of described SiC MOSFET power cell 1 is connected with input terminal, and the output of SiC MOSFET power cell 1 is connected with AC power terminal, and bus capacitor 9 is parallel to the two ends of SiC MOSFET power cell 1 bridge arm.
It should be noted that, described SiC MOSFET power cell 1 is half-bridge power module, full bridge power module or three phase full bridge power model; Base plate is also integrated with the temperature detecting unit 8 for detecting semiconductor device working temperature, and temperature detecting unit 8 is connected with temperature detection terminal.
Specific works process of the present invention is:
First control signal enters into the first accessory power supply 2 and the first drive level change-over circuit 4 through the first control terminal, the first accessory power supply 2 is made to provide electric energy for the first driving chip 3, first drive level change-over circuit 4 carries out level conversion to described first control signal, and the first control signal after level conversion is input in the first driving chip 3, the first driving chip 3 drives the switching tube work of upper brachium pontis in SiCMOSFET power cell 1.Second control signal enters into the second accessory power supply 5 and the second drive level change-over circuit 7 through the first control terminal, the second accessory power supply 5 is made to provide electric energy for the second driving chip 6, second drive level change-over circuit 7 carries out level conversion to described second control signal, and the second control signal after level conversion is input in the second driving chip 6, the second driving chip 6 drives the switching tube work of lower brachium pontis in SiC MOSFET power cell 1.Bus capacitor 9 and SiC MOSFET power cell 1, first drive circuit and the second drive circuit are integrated in same module by the SiC MOSFET intelligent power integration module of replaceable IGBT module of the present invention, reduce the distance between bus capacitor 9 and each semiconductor device, reduce the loop area of loop of power circuit, thus reduce the stray inductance of drive circuit and loop of power circuit, reduce the vibration of loop of power circuit and drive circuit.
Claims (3)
1. the SiC MOSFET intelligent power integration module of a replaceable IGBT module, it is characterized in that, comprise base plate, AC power terminal, input terminal, the first control terminal and the second control terminal, base plate is integrated with SiC MOSFET power cell (1), bus capacitor (9), the first drive circuit and the second drive circuit;
First drive circuit comprises the first accessory power supply (2), first driving chip (3) and the first drive level change-over circuit (4), second drive circuit comprises the second accessory power supply (5), second driving chip (6) and the second drive level change-over circuit (7), first control terminal is connected with the control end of the first accessory power supply (2) and the input of the first drive level change-over circuit (4), second control terminal is connected with the control end of the second accessory power supply (5) and the input of the second drive level change-over circuit (7), the power interface of the first driving chip (3) is connected with the first accessory power supply (2), the input of the first driving chip (3) is connected with the output of the first drive level change-over circuit (4), the power interface of the second driving chip (6) is connected with the second accessory power supply (5), the input of the second driving chip (6) is connected with the output of the second drive level change-over circuit (7), the output of the first driving chip (3) and the output of the second driving chip (6) are connected with the control end of brachium pontis upper in SiC MOSFET power cell (1) and the control end of lower brachium pontis respectively,
The input of described SiC MOSFET power cell (1) is connected with input terminal, the output of SiCMOSFET power cell (1) is connected with AC power terminal, and bus capacitor (9) is parallel to the two ends of SiC MOSFET power cell (1) bridge arm.
2. the SiC MOSFET intelligent power integration module of replaceable IGBT module according to claim 1, is characterized in that, described SiC MOSFET power cell (1) is half-bridge power module, full bridge power module or three phase full bridge power model.
3. the SiC MOSFET intelligent power integration module of replaceable IGBT module according to claim 1, it is characterized in that, described base plate is also integrated with the temperature detecting unit (8) for detecting semiconductor device working temperature, and temperature detecting unit (8) is connected with temperature detection terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510155623.0A CN104779815B (en) | 2015-04-02 | 2015-04-02 | A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510155623.0A CN104779815B (en) | 2015-04-02 | 2015-04-02 | A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104779815A true CN104779815A (en) | 2015-07-15 |
| CN104779815B CN104779815B (en) | 2017-08-01 |
Family
ID=53621104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510155623.0A Active CN104779815B (en) | 2015-04-02 | 2015-04-02 | A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104779815B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107052527A (en) * | 2016-12-26 | 2017-08-18 | 华南理工大学 | A kind of high-power SiC arc burying welding power sources |
| CN116520114A (en) * | 2023-03-09 | 2023-08-01 | 重庆大学 | MOS type semiconductor device testing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040227547A1 (en) * | 2003-05-14 | 2004-11-18 | Masaki Shiraishi | Semiconductor device and power supply system |
| CN103620962A (en) * | 2011-05-12 | 2014-03-05 | 日产自动车株式会社 | Switching circuit and semiconductor module |
-
2015
- 2015-04-02 CN CN201510155623.0A patent/CN104779815B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040227547A1 (en) * | 2003-05-14 | 2004-11-18 | Masaki Shiraishi | Semiconductor device and power supply system |
| CN101488496A (en) * | 2003-05-14 | 2009-07-22 | 株式会社瑞萨科技 | Semiconductor device and power supply system |
| CN103620962A (en) * | 2011-05-12 | 2014-03-05 | 日产自动车株式会社 | Switching circuit and semiconductor module |
Non-Patent Citations (2)
| Title |
|---|
| 杨旭等: ""开关电源用电力电子集成模块的研究"", 《电力电子技术》 * |
| 赵斌: ""SiC功率器件特性及其在Buck变换器中的应用研究"", 《中国优秀硕士学位论文全文数据库 工程科技II辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107052527A (en) * | 2016-12-26 | 2017-08-18 | 华南理工大学 | A kind of high-power SiC arc burying welding power sources |
| CN107052527B (en) * | 2016-12-26 | 2019-06-18 | 华南理工大学 | A kind of high-power SiC arc burying welding power source |
| CN116520114A (en) * | 2023-03-09 | 2023-08-01 | 重庆大学 | MOS type semiconductor device testing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104779815B (en) | 2017-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107026638B (en) | IGBT driving device and driving method | |
| CN201328070Y (en) | Ordinary optical coupler-based intelligent power module driving circuit | |
| CN101764595A (en) | IGBT drive and protection circuit | |
| CN202524283U (en) | Buffer circuit structure of modular multi-level converter sub-module | |
| CN113541461B (en) | Gate inductance matching method for inhibiting silicon carbide MOSFET voltage overshoot | |
| US20140119088A1 (en) | Three-level inverter and power supply equipment | |
| CN109425811B (en) | IGBT detection circuit and detection method | |
| CN101651419B (en) | Switch power supply circuit | |
| CN202772560U (en) | IGBT current foldback circuit and inductive load control circuit | |
| CN104779815A (en) | SiC MOSFET (metal-oxide-semiconductor field effect transistor) intelligent power integration module capable of replacing IGBT (insulated gate bipolar transistor) module | |
| CN105048794A (en) | Insulated Gate Bipolar Transistor (IGBT) driver interlock circuit with power-on time delay function | |
| CN104506038B (en) | Optical coupling detection based Buck convertor soft-switching control method | |
| CN204442195U (en) | A kind of have the single-phase full bridge inverter main circuit driving defencive function | |
| CN213547390U (en) | Inversion driving circuit and frequency conversion device | |
| CN103078617B (en) | The drive circuit of IGBT | |
| CN203574623U (en) | IGBT driving circuit | |
| CN203193500U (en) | Switching power supply and charging loop thereof | |
| CN203103926U (en) | Switching power supply and protective circuit thereof | |
| CN203608071U (en) | IGBT parallel-connected current sharing circuit | |
| CN103684030A (en) | Novel high-performance grid-connected photovoltaic inverter | |
| CN205356139U (en) | Three level circuit on T type and chip and module thereof | |
| CN203071898U (en) | Drive circuit of IGBT (Insulated Gate Bipolar Transistor) | |
| CN211127564U (en) | Driving and protecting circuit of intelligent power module | |
| CN102148571A (en) | High-frequency high-voltage DC switching power source based on current source mode | |
| CN201328071Y (en) | Single-phase frequency converter circuit and frequency converter utilizing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |