CN104766814A - Device and method for preventing growth of natural oxidation film in wet cleaning process - Google Patents
Device and method for preventing growth of natural oxidation film in wet cleaning process Download PDFInfo
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- CN104766814A CN104766814A CN201510149032.2A CN201510149032A CN104766814A CN 104766814 A CN104766814 A CN 104766814A CN 201510149032 A CN201510149032 A CN 201510149032A CN 104766814 A CN104766814 A CN 104766814A
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- wafer
- cleaning
- oxide film
- natural oxide
- vacuum chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
A device for preventing growth of a natural oxidation film in a wet cleaning process comprises wafer feeding devices, a cleaning device used for cleaning the surface of a wafer to be cleaned and further comprising cleaning units with different cleaning effects, a vacuum chamber arranged between the wafer feeding device and the cleaning device, and a drying device arranged between the cleaning device and the vacuum chamber and used for drying the cleaned wafer, wherein the wafer to be cleaned passes through a wafer inlet and outlet window of the vacuum chamber to be conveyed into the cleaning device. The vacuum chamber is arranged between the cleaning device and the wafer feeding devices as well as between the drying device and the wafer feeding device for the weak link in the wet cleaning, the wafer is prevented from making contact with external oxygen and vapor in the wet cleaning process, growth of the natural oxidation film is effectively prevented, and the stability of the semiconductor manufacturing process, especially the gate oxide deposition process is improved from another point of view.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of device and method preventing natural oxide film growth in wet clean process.
Background technology
Along with the development of very lagre scale integrated circuit (VLSIC), wafer size constantly increases, and chip critical size is but constantly reducing, and Qian Dao and rear road wafer cleaning technology are faced with new challenge.The particle of crystal column surface, metallic pollution, organic contamination, natural oxide film and microroughness etc. drastically influence performance and the rate of finished products of integrated circuit.
Such as, in semiconductor crystal wafer manufacturing process, gate oxide deposit as important processing step, the thickness of the gate oxide of its deposit, compactness, and uniformity etc. directly has influence on device speed and useful life.Meanwhile, natural oxide film because of its thickness and uniformity uncontrollable, have impact on gate oxide depositing technics greatly, and as the serious adverse factor but long-term existence of gate oxide depositing technics.
Normally, in order to ensure the quality of described gate oxide, in whole semiconductor wafer process manufacturing process, often add wet clean process, the dust granules that Main Function Shi Baqian road technique or environment bring and surface oxide layer are removed.But, due to the wet environment of the oxygen in air and wet-cleaned in wet clean process, natural oxide film certainly will be caused to grow along with the time, further adverse effect is brought to semiconductor fabrication process.
Seek a kind of structure simple, easy to operate, and can effectively prevent the apparatus and method of natural oxide film growth in wet clean process from having become one of those skilled in the art's technical problem urgently to be resolved hurrily.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, so there has been a kind of device and method preventing natural oxide film growth in wet clean process of the present invention.
Summary of the invention
The present invention be directed in prior art, due to the wet environment of the oxygen in air and wet-cleaned in conventional wet cleaning, natural oxide film certainly will be caused to grow along with the time, bring semiconductor fabrication process the defects such as adverse effect to provide a kind of device preventing natural oxide film growth in wet clean process further.
The another object of the present invention is in prior art, due to the wet environment of the oxygen in air and wet-cleaned in conventional wet cleaning, natural oxide film certainly will be caused to grow along with the time, bring semiconductor fabrication process the defects such as adverse effect to provide a kind of method preventing natural oxide film growth in wet clean process further.
For realizing first object of the present invention, the invention provides a kind of device preventing natural oxide film growth in wet clean process, the described device preventing natural oxide film growth in wet clean process, comprising: sheet devices on wafer, for wafer on slice to be cleaned, transmission; Cleaning device, for the surface cleaning of wafer to be cleaned, and comprises the cleaning unit with different cleaning effects further, and described cleaning unit also comprises order is connected successively chemicals tank and de-ionized water tank; Vacuum chamber, is arranged on described wafer between sheet devices and described cleaning device, and described wafer to be cleaned is just sent in described cleaning device by the silicon chip turnover window of described vacuum chamber; Drying device, is arranged between described cleaning device and described vacuum chamber, and for carrying out drying to the wafer after described cleaning.
Alternatively, described vacuum chamber comprises the vacuum transition chamber be connected with sheet devices on described wafer, the vacuum chamber be connected with described cleaning device further, and the vacuum buffer room be arranged between described vacuum transition chamber and described vacuum chamber, and the vacuum degree of described vacuum chamber is higher than the vacuum degree of described vacuum buffer room, the vacuum degree of described vacuum buffer room is greater than the vacuum degree of described vacuum transition chamber.
Alternatively, described vacuum chamber comprises the pump drawsheet unit be communicated with described vacuum chamber further.
Alternatively, the quantity of the cleaning unit of described cleaning device is at least 1, and described wafer to be cleaned is cleaned by the chemicals tank of described cleaning unit, de-ionized water tank successively.
Alternatively, the chemical solvent of described chemicals tank be SC1 cleaning fluid, SC2 cleaning fluid, cleaning fluid, hydrofluoric acid clean liquid, dilute hydrofluoric acid at least one of them.
Alternatively, described SC1 cleaning fluid is APM (Ammonium hydroxide/hydrogenperoxide/DI water mixture), and its formula is: NH
4oH:H
2o
2: H
2o=1:1:5 ~ 1:2:100.
Alternatively, described SC2 is HPM (Hydrochloric acid/hydrogen peroxide/DI watermixture), and its formula is: HCL:H
2o
2: H
2o=1:1:5 ~ 1:2:100.
Alternatively, described SC3 cleaning fluid is SPM (Sulphuric acid/hydrogen peroxide/DIwater mixture), and its formula is: the volume ratio of sulfuric acid and dual oxide water is 5:1 ~ 20:1
Alternatively, the drying means preventing the drying device of the device of the growth of natural oxide film in wet clean process from adopting described in be spin drying method, isopropyl alcohol heating atomization seasoning, Marangoni seasoning one of them.
For realizing the another object of the present invention, the invention provides described in a kind of passing through prevents the device of natural oxide film growth in wet clean process from preventing the method for natural oxide film growth in wet clean process, the described method preventing natural oxide film growth in wet clean process, comprising:
Perform step S1: wafer to be cleaned is sent to described vacuum chamber by sheet devices on described wafer;
Perform step S2: described wafer to be cleaned is sent to described cleaning device by the silicon chip turnover window of described vacuum chamber;
Perform step S3: the wafer completing cleaning is sent to drying device and carries out drying;
Perform step S4: the wafer completing drying is sent to sheet devices on described wafer by described vacuum chamber.
In sum, the present invention prevents the weak link of method for wet-cleaned of natural oxide film growth in wet clean process, by on the cleaning device that prevents the device of the growth of natural oxide film in wet clean process described and wafer between sheet devices, and described preventing, the drying device of the device of natural oxide film growth in wet clean process and wafer arrange vacuum chamber between sheet devices, not only avoid wafer and extraneous oxygen and moisture described in wet clean process, effectively prevent the growth of natural oxide film, improve the stability of semiconductor fabrication process particularly gate oxide depositing technics from another point of view.
Accompanying drawing explanation
Figure 1 shows that the present invention prevents the frame construction drawing of the device of natural oxide film growth in wet clean process;
Figure 2 shows that the present invention prevents the flow chart of the method for natural oxide film growth in wet clean process.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Refer to Fig. 1, Figure 1 shows that the present invention prevents the frame construction drawing of the device of natural oxide film growth in wet clean process.The described device 1 preventing natural oxide film growth in wet clean process, comprising: sheet devices 11 on wafer, and on described wafer, sheet devices 11 is for wafer to be cleaned (not shown) upper slice, transmission; Cleaning device 12, described cleaning device 12 for the surface cleaning of wafer to be cleaned, and comprises the cleaning unit 121 with different cleaning effects further, and described cleaning unit 121 also comprises order is connected successively chemicals tank 122 and de-ionized water tank 123; Vacuum chamber 13, described vacuum chamber 13 is arranged on described wafer between sheet devices 11 and described cleaning device 12, and described wafer to be cleaned is just sent in described cleaning device 12 by the silicon chip turnover window 131 of described vacuum chamber 13; Drying device 14, described drying device 14 is arranged between described cleaning device 12 and described vacuum chamber 13, and for carrying out drying to the wafer after described cleaning.
In order to better implement the technical scheme of the present invention, the quantity of the cleaning unit 121 of described cleaning device 12 is at least 1, and described wafer to be cleaned is cleaned by the chemicals tank 122 of described cleaning unit 121, de-ionized water tank 123 successively.In described wet clean process, adopt aqueous chemical solvent and deionized water oxidation, etching and dissolve wafer surface pollutant, organic substance and metal ion pollution.
Without limitation, such as the chemical solvent of described chemicals tank 122 includes but not limited to SC1 cleaning fluid, SC2 cleaning fluid, SC3 cleaning fluid, hydrofluoric acid clean liquid, dilute hydrofluoric acid cleaning fluid etc.
Wherein, described SC1 cleaning fluid is also APM (Ammonium hydroxide/hydrogenperoxide/DI water mixture), and its formula is: NH
4oH:H
2o
2: H
2o=1:1:5 ~ 1:2:100, comes undercutting and removal surface particles to be oxidized with microetch, also can remove slight organic pollution and partially metallised pollutant.
Described SC2 is also HPM (Hydrochloric acid/hydrogen peroxide/DI watermixture), and its formula is: HCL:H
2o
2: H
2o=1:1:5 ~ 1:2:100, the hydroxide of solubilized alkali metal ion and aluminium, iron and magnesium, in hydrochloric acid, chloride ion and remaining metal ions generation complex reaction form the complex compound of solution soluble in water in addition, can from the layer removing metal pollutant of silicon.
Described SPM cleaning fluid is also SPM (Sulphuric acid/hydrogen peroxide/DI watermixture), and its formula is: the volume ratio of sulfuric acid and hydrogen peroxide is 5:1 ~ 20:1, can be used for removing organic pollution; Hydrofluoric acid clean liquid is used for removing oxide, etching silicon dioxide and Si oxide from special area, reduces surface metal.
Simultaneously, after described dilute hydrofluoric acid cleaning fluid is used to remove native oxide and the cleaning of SC1 and SC2 cleaning fluid, hydrogen peroxide is oxidized one deck chemical oxide layer of generation on the wafer surface, while removal oxide layer, also form si-h bond in silicon wafer surface, and present hydrophobic surface.
Please continue to refer to Fig. 1, in wafer manufacturing process, after described wet clean process, technique is dry, its objective is and the liquid of crystal column surface is removed, make crystal column surface clean dried, for subsequent technique lays the foundation.In the present invention, the drying means preventing the drying device 14 of the device 1 of natural oxide film growth in wet clean process from adopting described in includes but not limited to spin drying method, isopropyl alcohol heating atomization seasoning, Marangoni seasoning etc.As those skilled in the art, easy understand ground, the Drying Technology Parameter of described drying device 14 can according to the process of product, technological requirement, and the surface characteristic of different product is arranged.
As the preferred implementation of the present invention, described cleaning device 12 is sent to by sheet devices 11 on described wafer via described vacuum chamber 13 for the ease of described wafer to be cleaned, and reduce the pumpdown time, described vacuum chamber 13 can comprise the vacuum transition chamber (not shown) be connected with sheet devices 11 on described wafer further, the vacuum chamber (not shown) be connected with described cleaning device 12, and the vacuum buffer room (not shown) be arranged between described vacuum transition chamber and described vacuum chamber, and the vacuum degree of described vacuum chamber is higher than the vacuum degree of described vacuum buffer room, the vacuum degree of described vacuum buffer room is greater than the vacuum degree of described vacuum transition chamber.Apparently, in order to obtain corresponding vacuum degree, described vacuum chamber 13 comprises the pump drawsheet unit 15 be communicated with described vacuum chamber 13 further.
In order to disclose the technical scheme of the present invention more intuitively, highlighting the beneficial effect of the present invention, now setting forth preventing the method for natural oxide film growth in wet clean process in conjunction with concrete execution mode.In a specific embodiment, prevent from the concrete number of components, structure, size etc. of the device of natural oxide film growth in wet clean process to be only described in enumerate, should not be considered as the restriction to technical solution of the present invention.
Refer to Fig. 2, and Fig. 1 is consulted in combination, Figure 2 shows that the present invention prevents the flow chart of the method for natural oxide film growth in wet clean process.The described method preventing natural oxide film growth in wet clean process, comprising:
Perform step S1: wafer to be cleaned is sent to described vacuum chamber 13 by sheet devices 11 on described wafer;
Perform step S2: described wafer to be cleaned is sent to described cleaning device 12 by the silicon chip turnover window 131 of described vacuum chamber 13;
Perform step S3: the wafer completing cleaning is sent to drying device 14 and carries out drying;
Perform step S4: the wafer completing drying is sent to sheet devices 11 on described wafer by described vacuum chamber.
Apparently, the present invention prevents the method for the growth of natural oxide film in wet clean process by the cleaning device 12 that prevents the device 1 of natural oxide film growth in wet clean process described and wafer between sheet devices 11, and described preventing, the drying device 14 of the device 1 of natural oxide film growth in wet clean process and wafer arrange vacuum chamber 13 between sheet devices 11, not only avoid wafer and extraneous oxygen and moisture described in wet clean process, effectively prevent the growth of natural oxide film, and improve the stability of semiconductor fabrication process particularly gate oxide depositing technics.
In sum, the present invention prevents the weak link of method for wet-cleaned of natural oxide film growth in wet clean process, by on the cleaning device that prevents the device of the growth of natural oxide film in wet clean process described and wafer between sheet devices, and described preventing, the drying device of the device of natural oxide film growth in wet clean process and wafer arrange vacuum chamber between sheet devices, not only avoid wafer and extraneous oxygen and moisture described in wet clean process, effectively prevent the growth of natural oxide film from another point of view, and improve the stability of semiconductor fabrication process particularly gate oxide depositing technics.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection range of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (10)
1. prevent a device for the growth of natural oxide film in wet clean process, it is characterized in that, described in prevent the device of natural oxide film growth in wet clean process, comprising:
Sheet devices on wafer, for wafer on slice to be cleaned, transmission;
Cleaning device, for the surface cleaning of wafer to be cleaned, and comprises the cleaning unit with different cleaning effects further, and described cleaning unit also comprises order is connected successively chemicals tank and de-ionized water tank;
Vacuum chamber, is arranged on described wafer between sheet devices and described cleaning device, and described wafer to be cleaned is just sent in described cleaning device by the silicon chip turnover window of described vacuum chamber;
Drying device, is arranged between described cleaning device and described vacuum chamber, and for carrying out drying to the wafer after described cleaning.
2. prevent the device of natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, described vacuum chamber comprises the vacuum transition chamber be connected with sheet devices on described wafer, the vacuum chamber be connected with described cleaning device further, and the vacuum buffer room be arranged between described vacuum transition chamber and described vacuum chamber, and the vacuum degree of described vacuum chamber is higher than the vacuum degree of described vacuum buffer room, the vacuum degree of described vacuum buffer room is greater than the vacuum degree of described vacuum transition chamber.
3. prevent the device of natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, described vacuum chamber comprises the pump drawsheet unit be communicated with described vacuum chamber further.
4. prevent the device of natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, the quantity of the cleaning unit of described cleaning device is at least 1, and described wafer to be cleaned is cleaned by the chemicals tank of described cleaning unit, de-ionized water tank successively.
5. prevent the device of natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, the chemical solvent of described chemicals tank be SC1 cleaning fluid, SC2 cleaning fluid, SPM cleaning fluid, hydrofluoric acid clean liquid, dilute hydrofluoric acid at least one of them.
6. prevent the device of natural oxide film growth in wet clean process as claimed in claim 5, it is characterized in that, described SC1 cleaning fluid is APM (Ammonium hydroxide/hydrogen peroxide/ DI water mixture), and its formula is: NH
4oH:H
2o
2: H
2o=1:1:5 ~ 1:2:100.
7. prevent the device of natural oxide film growth in wet clean process as claimed in claim 5, it is characterized in that, described SC2 is HPM (Hydrochloric acid/hydrogen peroxide/DI water mixture), and its formula is: HCL:H
2o
2: H
2o=1:1:5 ~ 1:2:100.
8. prevent the device of natural oxide film growth in wet clean process as claimed in claim 5, it is characterized in that, described SPM cleaning fluid is SPM (Sulphuric acid/hydrogen peroxide/DI water mixture), and its formula is: the volume ratio of sulfuric acid and hydrogen peroxide is: 5:1 ~ 20:1.
9. prevent the device of natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, described in prevent the drying device of the device of the growth of natural oxide film in wet clean process from adopting drying means be spin drying method, isopropyl alcohol heating atomization seasoning, Marangoni seasoning one of them.
10. the method by preventing the device of natural oxide film growth in wet clean process from preventing natural oxide film growth in wet clean process as claimed in claim 1, it is characterized in that, the described method preventing natural oxide film growth in wet clean process, comprising:
Perform step S1: wafer to be cleaned is sent to described vacuum chamber by sheet devices on described wafer;
Perform step S2: described wafer to be cleaned is sent to described cleaning device by the silicon chip turnover window of described vacuum chamber;
Perform step S3: the wafer completing cleaning is sent to drying device and carries out drying;
Perform step S4: the wafer completing drying is sent to sheet devices on described wafer by described vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510149032.2A CN104766814A (en) | 2015-03-31 | 2015-03-31 | Device and method for preventing growth of natural oxidation film in wet cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510149032.2A CN104766814A (en) | 2015-03-31 | 2015-03-31 | Device and method for preventing growth of natural oxidation film in wet cleaning process |
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|---|---|
| CN104766814A true CN104766814A (en) | 2015-07-08 |
Family
ID=53648569
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|---|---|---|---|
| CN201510149032.2A Pending CN104766814A (en) | 2015-03-31 | 2015-03-31 | Device and method for preventing growth of natural oxidation film in wet cleaning process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817512A (en) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | Method for cleaning wafer and cleaning device |
| CN111192839A (en) * | 2020-01-07 | 2020-05-22 | 贵州振华风光半导体有限公司 | Method for controlling water vapor content in integrated circuit with black ceramic low-melting glass shell |
| CN112893282A (en) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | Polysilicon cleaning and recycling pretreatment unit, cleaning machine and cleaning method |
| CN113097100A (en) * | 2021-03-08 | 2021-07-09 | 长江存储科技有限责任公司 | Cleaning method and cleaning equipment |
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Application publication date: 20150708 |
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