CN104751861A - Preparation method of magnetic storage device - Google Patents
Preparation method of magnetic storage device Download PDFInfo
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- CN104751861A CN104751861A CN201310745924.XA CN201310745924A CN104751861A CN 104751861 A CN104751861 A CN 104751861A CN 201310745924 A CN201310745924 A CN 201310745924A CN 104751861 A CN104751861 A CN 104751861A
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Abstract
The invention discloses a preparation method of a magnetic storage device. The preparation method comprises the steps of growing a graphene layer, growing a magnetic dielectric material layer on the graphene layer, and growing a substrate layer on the magnetic dielectric material layer. According to the preparation method, the graphene layer is used for replacing the original DLC of the magnetic storage device, so that the flying height between the magnetic head and the magnetic disk of the magnetic storage device can be effectively reduced and the magnetic storage density can be improved; secondly, the process order is changed, the graphene layer is grown firstly, and then the magnetic dielectric material layer and the substrate layer are grown on the graphene layer, and therefore, close binding of the graphene layer and the magnetic dielectric material layer is realized, the adhesion between the graphene layer and the magnetic dielectric material layer can be thoroughly improved and the stability of the magnetic disk can be guaranteed; thirdly, the graphene layer is grown firstly to obtain one single layer of graphene of a complete structure, and the graphene layer has a flat surface and an excellent adsorption effect; besides, as a pre-deposition process in the prior art is omitted, the possible diffusion influence of the pre-deposition process to the magnetic dielectric material layer can be reduced, and the stability of the magnetic disk also can be improved.
Description
Technical field
The present invention relates to a kind of magnetic storage technology, particularly a kind of preparation method of magnetic memory apparatus.
Background technology
The development of magnetic storage technology etc. becomes the massive store technology of current rewritable the most economic, and having the magnetic memory apparatus of tidemark density, will be the leading role of the storage of " large data age " as magnetic storage hard disk.Along with the arriving of networked information era, various information increases with presenting explosion type, to the preservation of information, retrieval, statistical study, becomes the sixty-four dollar question of network application.Therefore, the storage density of magnetic memory apparatus needs to update.
For magnetic storage hard disk, carry out access data by the interaction between magnetic head and disc surface magnetic medium.In the process of access data, head gimbal is at the certain altitude of disc surface, and disc is relative to magnetic head high-speed rotation.Because hard disk operational is in atmospheric environment, the various objectionable impuritiess in air can produce corrosion to magnetic head, and in the starting, stopped process of hard disk, magnetic head and disc all can come in contact.Therefore in order to improve starting, the Stopping Ability of magnetic head; increase its erosion-resisting ability; extend the serviceable life of magnetic head; in the DLC film (diamond-like carbon film-coating (Diamond-like carbon)) that the surface deposition of magnetic head and magnetic medium has one deck to shield; during hard disk operational; a height is there is, i.e. flying height (flight height) between magnetic head and disc.
In order to improve the storage density of hard disk further, the storage space occupied by every byte data must be reduced, namely reducing the size of magnetic particle.When magnetic particle reduces, in order to improve the signal to noise ratio (snr) of access data, flying height must be reduced.In the past few decades, along with the continuous growth of hard-disc storage density, flying height is in continuous reduction; for up-to-date TMR magnetic head; its flying height is less than 10nm, on the other side be the thickness of magnetic medium surface DLC protective seam also in continuous reduction, reach about 2nm.In addition, being in high-speed rotation during magnetic media disk work, in order to improve the adhesiveness of DLC protective seam and head surface, in hard disk industry, generally first depositing one deck Si as middle layer at magnetic head or magnetic disk surface.This can increase flying height, and due to depositing operation, particle with certain energy when depositing, therefore will inevitably form various mixolimnion with matrix, have an impact to magnetic storage stability.
Two-dimensional material Graphene is the thinnest in the world is at present the hardest nano material also, and its coefficient of heat conductivity is up to 5300W/mK, higher than carbon nano-tube and adamas.Adopt Graphene to substitute DLC film, after requirement can being damaged meeting its corrosion protection abrasion resistant, reducing flying height further, also can reduce magnetic medium sheet surface heat deposition.
Patent US2011/0151278A1 proposes first pre-deposition Cu on magnetic medium, the forming core layers such as Ni, and then growing graphene material, or pre-deposition SiC, then selective evaporation silicon atom can obtain graphene-structured.The scheme that this patent provides and DLC scheme similar; the flying height that difficult acquisition is desirable; and the object of pre-deposition technique is the adhesiveness increasing carbon protective layer; but particle deposit time with certain energy; therefore will inevitably form various mixolimnion with magnetic medium matrix, thus affect the performance of magnetic medium, if without pre-deposition technique; on magnetic medium, form Graphene by the method for physical transfer, the adhesion between itself and magnetic medium is more weak.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of magnetic memory apparatus, its stability is high, close structure.
For achieving the above object, the present invention by the following technical solutions: a kind of preparation method of magnetic memory apparatus, is characterized in that, comprising: generate graphene layer; Graphene layer generates magnetic media material layer; Magnetic media material layer generates substrate layer.
Preferably, described graphene layer, for generate graphene layer on substrate, is transferred on supporting layer by described generation graphene layer.
Preferably, after magnetic media material layer generates substrate layer, also comprise step: peel off supporting layer, graphene layer is coated with lubricating layer.
Preferably, described substrate is copper substrate.
Preferably, described substrate is silicon substrate or silicon dioxide substrates, and described substrate is coated with layers of copper.
Preferably, also step is comprised after magnetic media material layer generating substrate layer: erode substrate and layers of copper.
Preferably, described substrate layer is glass substrate layer, describedly on magnetic media material layer, generates substrate layer for be bonded on glass substrate layer by magnetic media material layer.
Preferably, described substrate layer is metal rigidity substrate layer, and the described substrate layer that generates on magnetic media material layer is for evaporation metal rigid substrates layer on magnetic media material layer.
The present invention adopts above technical scheme, adopts graphene layer to replace original DLC, effectively reduces the flying height between magnetic head and disk, can improve magnetic storage density; Secondly, owing to changing process sequence, first graphene layer is generated, magnetic media material layer and substrate layer on graphene layer again, achieve combining closely of graphene layer and magnetic media material layer, fully can improve adhesion between graphene layer and magnetic media material layer, ensure the stability of disk; Moreover, the present invention first generates the single-layer graphene that graphene layer can obtain structural integrity, it has even curface, there is good suction-operated, in addition, owing to eliminating pre-deposition technique of the prior art, reduce it to possible the extending influence of magnetic media material layer, also improve the stability of disk.
Accompanying drawing explanation
Fig. 1 is magnetic storage apparatus preparation method main flow schematic diagram of the present invention;
Fig. 2 is magnetic storage apparatus preparation method idiographic flow schematic diagram of the present invention;
Fig. 3 is magnetic storage apparatus preparation method embodiment one substrate of the present invention is the schematic flow sheet of copper;
The structural generation process schematic of to be substrate of the present invention the be copper of the 4a ~ 4e in Fig. 4;
Fig. 5 is magnetic storage apparatus preparation method embodiment two substrate of the present invention is the schematic flow sheet of silicon;
The structural generation process schematic of to be substrate of the present invention the be silicon of the 6a ~ 6d in Fig. 6.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The surface of existing magnetic memory apparatus scribbles the magnetic media material layer used as record, what it presented under the microscope is magnetic particle one by one.Small magnetic particle polarity can be changed by the process of magnetic head quick rotation, and system differentiates 0 in scale-of-two or 1 by the change of magnetic flux and magnetic resistance.In the process of magnetic head High Rotation Speed, it produces a large amount of heats.And graphite layers friction very low (friction factor ~ 0.001), in face thermal conductance very high (5000 watts/meter. degree), even if it can ensure that contact read-write technology is when magnetic memory apparatus rotating speed is very high, all can not because of overheated and damaged.
As shown in Figure 1, the invention discloses a kind of preparation method of magnetic memory apparatus, it comprises the following steps:
S101: generate graphene layer;
S102: generate magnetic media material layer on graphene layer;
S103: generate substrate layer on magnetic media material layer.
As shown in Figure 2, concrete step of the present invention can be as follows:
S201: generate graphene layer on substrate;
S202: graphene layer is transferred on supporting layer;
S203: generate magnetic media material layer on graphene layer;
S204: generate substrate layer on magnetic media material layer.
S205: peel off supporting layer.
S206: be coated with lubricating layer on graphene layer.
Embodiment one:
As shown in the 4a ~ 4e of Fig. 3, Fig. 4, when described substrate is copper substrate, when substrate layer is glass substrate, its concrete steps are as follows:
S301: generate graphene layer in copper substrate;
S302: graphene layer is transferred on supporting layer;
S303: generate magnetic media material layer on graphene layer;
S304: magnetic media material layer is bonded on glass substrate layer;
S305: peel off supporting layer;
S306: be coated with lubricating layer on graphene layer.
Wherein, the bonding technology adopted in the present invention is: by magnetic media material layer and glass substrate layer through surface clean or activation process, makes it to be bonded to be integrated by Van der Waals force, molecular force.
Embodiment two:
As shown in the 6a ~ 6d of Fig. 5, Fig. 6, when described substrate is silicon substrate, when described substrate layer is metal rigidity substrate, its concrete steps are as follows:
S501: layers of copper is established in plating on a silicon substrate;
S502: generate graphene layer on a silicon substrate;
S503: generate magnetic media material layer on graphene layer;
S504: evaporation metal rigid substrates layer on magnetic media material layer;
S505: erode silicon substrate and layers of copper;
S506: be coated with lubricating layer on graphene layer.
Wherein, the silicon substrate in embodiment two also can adopt silicon dioxide substrates to substitute, and described metal rigidity substrate layer can adopt the rigid material such as aluminium, copper.
The present invention is by first generating graphene layer, magnetic media material layer and substrate layer is generated again on graphene layer, avoid former technique because of particle deposit time with certain energy, therefore various mixolimnion will inevitably be formed with magnetic media material layer, thus affect the performance issue of magnetic media material layer, and the adhesion fully improved between graphene layer and magnetic media material layer, ensure the stability of magnetic memory apparatus; Moreover the present invention first generates the Graphene that graphene layer can obtain structural integrity, and it has even curface, has good suction-operated, make whole magnetic memory apparatus more stable.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a preparation method for magnetic memory apparatus, is characterized in that, comprising: generate graphene layer; Graphene layer generates magnetic media material layer; Magnetic media material layer generates substrate layer.
2. the preparation method of magnetic memory apparatus according to claim 1, is characterized in that, described graphene layer, for generate graphene layer on substrate, is transferred on supporting layer by described generation graphene layer.
3. the preparation method of magnetic memory apparatus according to claim 2, is characterized in that, also comprises step after magnetic media material layer generates substrate layer: peel off supporting layer, graphene layer is coated with lubricating layer.
4. the preparation method of magnetic memory apparatus according to claim 2, is characterized in that, described substrate is copper substrate.
5. the preparation method of magnetic memory apparatus according to claim 2, is characterized in that, described substrate is silicon substrate or silicon dioxide substrates, and described substrate is coated with layers of copper.
6. the preparation method of magnetic memory apparatus according to claim 5, is characterized in that, also comprises step after magnetic media material layer generates substrate layer: erode substrate and layers of copper.
7. the preparation method of magnetic memory apparatus according to claim 1, is characterized in that, described substrate layer is glass substrate layer, describedly on magnetic media material layer, generates substrate layer for be bonded on glass substrate layer by magnetic media material layer.
8. the preparation method of magnetic memory apparatus according to claim 1, is characterized in that, described substrate layer is metal rigidity substrate layer, and the described substrate layer that generates on magnetic media material layer is for evaporation metal rigid substrates layer on magnetic media material layer.
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| CN201310745924.XA CN104751861A (en) | 2013-12-30 | 2013-12-30 | Preparation method of magnetic storage device |
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| CN201310745924.XA CN104751861A (en) | 2013-12-30 | 2013-12-30 | Preparation method of magnetic storage device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794581A (en) * | 2010-03-01 | 2010-08-04 | 清华大学 | Hard disc device |
| US20120020152A1 (en) * | 2010-07-26 | 2012-01-26 | Centre National De La Recherche Scientifique | Writable Magnetic Memory Element |
| CN102610753A (en) * | 2012-03-31 | 2012-07-25 | 中国科学院上海微系统与信息技术研究所 | Preparing method of phase change memory containing graphene electrode material |
| CN102963883A (en) * | 2012-10-22 | 2013-03-13 | 武汉大学 | Method for preparing graphene |
| US20130114165A1 (en) * | 2011-11-07 | 2013-05-09 | Hitachi Global Storage Technologies Netherlands B.V. | FePt-C BASED MAGNETIC RECORDING MEDIA WITH ONION-LIKE CARBON PROTECTION LAYER |
| CN103323796A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | MTJ magnetic field sensor using graphene as barrier layer |
-
2013
- 2013-12-30 CN CN201310745924.XA patent/CN104751861A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794581A (en) * | 2010-03-01 | 2010-08-04 | 清华大学 | Hard disc device |
| US20120020152A1 (en) * | 2010-07-26 | 2012-01-26 | Centre National De La Recherche Scientifique | Writable Magnetic Memory Element |
| US20130114165A1 (en) * | 2011-11-07 | 2013-05-09 | Hitachi Global Storage Technologies Netherlands B.V. | FePt-C BASED MAGNETIC RECORDING MEDIA WITH ONION-LIKE CARBON PROTECTION LAYER |
| CN102610753A (en) * | 2012-03-31 | 2012-07-25 | 中国科学院上海微系统与信息技术研究所 | Preparing method of phase change memory containing graphene electrode material |
| CN102963883A (en) * | 2012-10-22 | 2013-03-13 | 武汉大学 | Method for preparing graphene |
| CN103323796A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | MTJ magnetic field sensor using graphene as barrier layer |
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Application publication date: 20150701 |