CN104749663A - Multilayer film with extreme-ultraviolet spectral purity and resistance to irradiation damage - Google Patents
Multilayer film with extreme-ultraviolet spectral purity and resistance to irradiation damage Download PDFInfo
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Abstract
The invention discloses a multilayer film with extreme-ultraviolet spectral purity and resistance to irradiation damage, belongs to the technical field of extreme-ultraviolet lighography and solves the technical problem about severe decreasing of reflectivity at the extreme-ultraviolet waveband under high-energy laser irradiation due to the fact that an extreme-ultraviolet multilayer film is higher in reflectivity in the out-of-band waveband in the prior art. The multilayer film sequentially comprises a substrate, a cycle layer, a first spectrum purification layer, a first Mo layer, a second spectrum purification layer and a radiation damage resisting layer from bottom to top, number of cycles of the cycle layer is 40-60, each cycle is composed of an Si layer and a second Mo layer in sequence from bottom to top, the first and second spectrum purification layers are made of C, SiC or Si3N4, and the radiation damage resisting layer is made of TiN or SiO2. By the arrangement, imaging quality of an extreme-ultraviolet lithography mirror system can be improved while service life of the same can be prolonged, and the reflectivity at the extreme-ultraviolet waveband ranges from 62% to 68.5%.
Description
Technical field
The invention belongs to extreme ultraviolet photolithographic technical field, be specifically related to a kind of multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing.
Background technology
Extreme ultraviolet photolithographic is the Next Generation Lithography most possibly realizing 22nm technology node.Extreme ultraviolet etching system uses wavelength to be 13.5nm, and at this wave band, the absorption coefficient of most of material is all very high, so can only adopt total-reflection type system.In order to shorten the time shutter further, improving output, needing on optical element, to be coated with high precision multilayer film to improve reflectivity.The Mo/Si multilayer film that the multilayer film that extreme ultraviolet waveband is preferably coated with is periodicity is 40, periodic thickness is 7nm.The Mo/Si multilayer film that in prior art, the multilayer film that extreme ultraviolet waveband is coated with is periodicity is 40, periodic thickness is 7nm.The groundwork wave band of this multiplayer films in EUV is near 13.5nm (98eV), and peak reflectivity can reach more than 68%.But there is following defect in this Mo/Si multilayer film:
First, Mo/Si multilayer film increases gradually at ultraviolet band reflectivity, reaches as high as 60%, and at visible light wave range, reflectivity is 38%-47%, also can reach 30% at the minimum reflectivity of infrared band.Laser plasma light source is the Ordinary Light Sources Have of extreme ultraviolet etching system, and this light source not only has higher radiation intensity at extreme ultraviolet waveband, and also higher in the radiation intensity of ultraviolet band, visible waveband and infrared band.The Other substrate materials used in extreme ultraviolet photolithographic is mainly polystyrene and acrylates mixing macromolecular material, or acrylates macromolecular material.The photoresist used in extreme ultraviolet photolithographic not only to the photaesthesia of 13.5nm, and to band outer wave band light also very sensitive.Particularly wavelength photoresist in 160nm-240nm wavelength band is comparatively responsive, and its susceptibility is even higher than EUV wave band, and also larger at the light source output power of this wave band.Resolution R and the depth of focus formula DOF of extreme ultraviolet etching system are respectively:
Wherein, k
1and k
2represent coefficient, λ represents wavelength, NA represents numerical aperture, from formula (1) and (2), the resolution R of etching system is all relevant with wavelength X with depth of focus DOF, if multilayer film is high at reflectivity that is visible, infrared band, cut off band width is narrow, can affect the image quality of etching system.
Secondly, under the high energy laser irradiation of EUV wave band, film inside can produce highfield, and the membraneous material caused is ionized, and then causes film surface to there will be the hole of ablation shape.Even if multilayer film is under the EUV radiation effects of denier, breakage to a certain degree and hole are also caused in surface, and this can cause the significantly reduction of x-ray reflectivity.
Summary of the invention
The object of the invention is to solve extreme ultraviolet catoptron multilayer film in prior art higher at the luminance factor of the outer wave band of band, under high energy laser irradiation, the technical matters of the reflectivity degradation of extreme ultraviolet waveband, provides a kind of multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is as follows.
There is the multilayer film of extreme ultraviolet spectral purity and radioresistance injury reinforcing, comprise substrate, cycle layer, the first spectrum purification layer, a Mo layer, the second spectrum purification layer and radioresistance injury reinforcing layer from bottom to up successively;
The number of cycles of described cycle layer is 40-60, and each cycle is made up of the Si layer be arranged in order from bottom to up, the 2nd Mo layer, and the thickness of described Si layer is 4.1nm-4.3nm, and the thickness of the 2nd Mo layer is 2.7nm-2.9nm;
The thickness of a described Mo layer is 2.7nm-2.9nm;
The material of described first spectrum purification layer and the second spectrum purification layer is identical or different, is respectively C, SiC or Si
3n
4, thickness is respectively 4.1nm-4.3nm;
The material of described radioresistance injury reinforcing layer is TiN or SiO
2, thickness is 1nm-3nm.
Further, described first spectrum purification layer is equal with each periodic thickness of cycle layer with the gross thickness of a Mo layer.
Further, each periodic thickness of described cycle layer is 7nm.
Further, the surfaceness of described substrate is less than or equal to 0.2nm.
Compared with prior art, the invention has the beneficial effects as follows:
The multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing of the present invention is in the profile not changing film system, do not increase optical element, do not increase on the basis of extra procedure of processing yet, make spectrum purification layer and radioresistance injury reinforcing layer, by the outer wave band of inhibition zone and the irradiation damage threshold value improving Mo/Si layer, reach the image quality and the object in serviceable life that improve extreme ultraviolet photolithographic mirror system, and add spectrum purification layer and radioresistance injury reinforcing layer to the loss of the reflectivity of extreme ultraviolet waveband below 5%, negligible.Multilayer film of the present invention is applicable to being applied in and requires high, in the extreme ultraviolet etching system that irradiation dose is large to spectral purity.
Accompanying drawing explanation
Fig. 1 is the structural representation with the multilayer film of extreme ultraviolet spectral purity and radioresistance injury reinforcing of the present invention;
Fig. 2 is the change curve of reflectivity in 12.8nm-14.2nm wavelength coverage of the multilayer film in embodiment of the present invention 1-6;
Fig. 3 is the partial enlarged drawing in the wavelength coverage of 13.3nm-13.8nm in Fig. 2;
Fig. 4 is the change curve of reflectivity in the wavelength coverage of 160nm-240nm of the multilayer film in embodiment of the present invention 1-6;
In figure, 1, substrate, 2, cycle layer, 21, Si layer, the 22, the 2nd Mo layer, the 3, first spectrum purification layer, the 4, the one Mo layer, the 5, second spectrum purification layer, 6, radioresistance injury reinforcing layer.
Embodiment
Below in conjunction with accompanying drawing, the present invention is elaborated further.
As shown in Figure 1, there is the multilayer film of extreme ultraviolet spectral purity and radioresistance injury reinforcing, comprise substrate 1, cycle layer 2, first spectrum purification layer 3, Mo layer 4, second spectrum purification layer 5 and a radioresistance injury reinforcing layer 6 from bottom to up successively.Wherein, substrate 1 is not particularly limited, and selects this area to commonly use substrate, and the surfaceness of general substrate 1 is less than or equal to 0.2nm.Cycle layer 2 is containing 40-60 cycle, each cycle is double-layer structure, be followed successively by Si layer 21, the 2nd Mo layer 22 from bottom to up, what contact with substrate 1 is Si layer 21, and what contact with the first spectrum purification layer 3 is the 2nd Mo layer 22, the material of Si layer 21 is Si, thickness is generally 4.1nm-4.3nm, and the material of the 2nd Mo layer 23 is Mo, and thickness is generally 2.7nm-2.9nm, the periodic thickness of cycle layer 2 is 6.6nm-7.4nm, is preferably 7nm.The material of the one Mo layer 4 is Mo, and thickness is 2.7nm-2.9nm.The material of the first spectrum purification layer 3 and the second spectrum purification layer 5 can be the same or different, and is respectively C, SiC or Si
3n
4, preferred layers of material is identical, is SiC; The thickness of the first spectrum purification layer 3 and the second spectrum purification layer 5 can be 4.1nm-4.3nm respectively, and preferred two layers of thickness is equal.The material of radioresistance injury reinforcing layer 6 is TiN or SiO
2, thickness is 1nm-3nm.This multilayer film is 62%-68.5% at the peak reflectivity of extreme ultraviolet waveband, and the reflectivity within the scope of 160nm-240nm is all below 50%, and the reflectivity within the scope of 200-220nm can reach less than 5%.Can by changing material, the thickness of the first spectrum purification layer 3 and the second spectrum purification layer 5 and combining satisfied different photoresist to the requirement of multilayer film strips external wave section degree of suppression; Can by changing material, the thickness of radioresistance injury reinforcing layer 6 and combining satisfied different photoetching radiation environment to the requirement of multilayer film radioresistance injury reinforcing.
Multilayer film of the present invention, because the thickness of radioresistance injury reinforcing layer 3 only has 1nm-3nm, so it is relatively very little on the impact of the reflectivity of extreme ultraviolet waveband.And due to its material adopted be TiN or SiO
2, so can effectively suppress high energy laser irradiation.
Multilayer film of the present invention, the thickness of the first spectrum purification layer 3 adopted, a Mo layer 4 and the second spectrum purification layer 5, ensure that the periodic thickness of cycle layer 2 and the gross thickness of the first spectrum purification layer 3 and a Mo layer 4 are consistent substantially, so multilayer film can effectively destructive interference to the outer wave band of band, while can ensure that the normal interference of EUV wave band superposes.When periodic thickness and the first spectrum purification layer 3 of cycle layer 2 are equal with the gross thickness of a Mo layer 4, effect is best, so the periodic thickness of preferred cycle layer 2 of the present invention is equal with the gross thickness of the first spectrum purification layer 3 and a Mo layer 4.Under the radiation of laser plasma light source, after the reflection by the multilayer film in the present invention, the reflectivity of outer wave band is with to drop to less than 5%.
The preparation of multilayer film of the present invention can adopt magnetron sputtering technique, wherein, Si layer 21, the 2nd Mo layer 22 and a Mo layer 4 select magnetically controlled DC sputtering, first spectrum purification layer 3, second spectrum purification layer 5 and radioresistance injury reinforcing layer 6 select magnetically controlled DC sputtering, and sputtering working gas all can adopt argon gas.
Comparative example 1
Existing Mo/Si multilayer film, be followed successively by substrate, Mo/Si cycle layer, a Si layer (material Si from bottom to up, thickness is 4.2nm), wherein, Mo/Si cycle layer contains 40 cycles, each cycle is followed successively by the 2nd Si layer (material Si from bottom to up, thickness is 4.2nm), Mo layer (material Mo, thickness is 2.8nm), what contact with substrate 1 is the 2nd Si layer, what contact with a Si layer is Mo layer, and the surfaceness of substrate is 0.2nm.Adopt the multilayer film of albedometer to comparative example 1 to characterize, the peak reflectivity of this multilayer film in 12.8nm-14.2nm wavelength coverage is about 73%, can reach 60% at the reflectivity of deep ultraviolet wave band.
Embodiment 1-6
There is the multilayer film of extreme ultraviolet spectral purity and radioresistance injury reinforcing, comprise substrate 1 successively from bottom to up, cycle layer 2, first spectrum purification layer 3, one Mo layer 4 (material Mo, thickness is 2.8nm), second spectrum purification layer 5, Flouride-resistani acid phesphatase protective seam 6, wherein, cycle layer 2 is containing 40 cycles, each cycle is followed successively by Si layer 21 (material Si from bottom to up, thickness is 4.2nm), 2nd Mo layer 22 (material Mo, thickness is 2.8nm), what contact with substrate 1 is Si layer 21, what contact with the first spectrum purification layer 3 is the 2nd Mo layer 2, the surfaceness of substrate 1 is 0.2nm.Material and the thickness of first spectrum purification layer 3, the second spectrum purification layer 5 of embodiment 1-6 and Flouride-resistani acid phesphatase protective seam 6 employing are as shown in table 1.
Table 1 is material and the thickness of the first spectrum purification layer 3, second spectrum purification layer 5 and Flouride-resistani acid phesphatase protective seam 6 in the multilayer film of embodiment 1-6
| Embodiment | 1 | 2 | 3 | 4 | 5 | 6 |
| The material of the first spectrum purification layer | C | C | Si 3N 4 | Si 3N 4 | SiC | SiC |
| Thickness/the nm of the first spectrum purification layer | 4.1 | 4.1 | 4.2 | 4.2 | 4.3 | 4.3 |
| The material of the second spectrum purification layer | C | C | Si 3N 4 | Si 3N 4 | SiC | SiC |
| Thickness/the nm of the second spectrum purification layer | 4.1 | 4.1 | 4.2 | 4.2 | 4.3 | 4.3 |
| The material of Flouride-resistani acid phesphatase protective seam | SiO 2 | TiN | SiO 2 | TiN | SiO 2 | TiN |
| Thickness/the nm of Flouride-resistani acid phesphatase protective seam | 2 | 2 | 3 | 3 | 1 | 1 |
Measure the reflectivity of multilayer film in the wavelength coverage of 12.8nm-14.2nm of embodiment 1-6, albedometer can be adopted to characterize, result as shown in Figures 2 and 3, in Fig. 2 and Fig. 3, the corresponding embodiment 1 of curve 1, curve 2 (Fig. 2 curve 1,2 coincidence) corresponding embodiment 2, the corresponding embodiment 3 of curve 3, curve 4 (Fig. 2 curve 3,4 coincidence) corresponding embodiment 4, the corresponding embodiment 5 of curve 5, curve 6 (Fig. 2 curve 5,6 coincidence) corresponding embodiment 6.As can be seen from Figures 2 and 3, when the material of the first spectrum purification layer 3 of multilayer film is C, the material of the second spectrum purification layer 5 is C, and the material of Flouride-resistani acid phesphatase protective seam 6 is respectively TiN and SiO
2time, the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage is respectively 64.1% and 63.8%; When the material of the first spectrum purification layer 3 of multilayer film is Si
3n
4, the material of the second spectrum purification layer 5 is Si
3n
4, the material of Flouride-resistani acid phesphatase protective seam 6 is respectively TiN and SiO
2time, the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage is respectively 62% and 62.7%; When the material of the first spectrum purification layer 3 of multilayer film is SiC, the material of the second spectrum purification layer 5 is SiC, and the material of Flouride-resistani acid phesphatase protective seam 6 is respectively TiN and SiO
2time, the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage is respectively 68.5% and 68%.Learnt by comparative example 1, Fig. 2 and Fig. 3, add in existing Mo/Si multilayer film after in the first spectrum purification layer 3, second spectrum purification layer 5 and radioresistance injury reinforcing layer 6, at the reflectivity of extreme ultraviolet waveband, very large impact is not played to multilayer film, the loss of reflectivity is within acceptable scope, generally below 5%.
Measure the reflectivity of multilayer film in the wavelength coverage of 160nm-240nm of embodiment 1-6, albedometer can be adopted to characterize, result as shown in Figure 4, in Fig. 4, the corresponding embodiment 1 of curve 1, the corresponding embodiment 2 of curve 2, the corresponding embodiment 3 of curve 3, the corresponding embodiment 4 of curve 4, the corresponding embodiment 5 of curve 5, the corresponding embodiment 6 of curve 6.As can be seen from Figure 4, multilayer film of the present invention is all no more than 40% at deep ultraviolet reflectivity, the first spectrum purification layer 3, second spectrum purification layer 5 of different materials and Flouride-resistani acid phesphatase protective seam 6 the maximum degree of suppression of deep ultraviolet wave band and inhibition zone different.Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is C, and the material of Flouride-resistani acid phesphatase protective seam 6 is SiO
2, multilayer film is at the reflectivity 13% at 160nm place; Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is C, and the material of Flouride-resistani acid phesphatase protective seam 6 is TiN, and multilayer film is at the reflectivity 17% at 160nm place; Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is Si
3n
4, the material of Flouride-resistani acid phesphatase protective seam 6 is SiO
2, multilayer film is only 5% at the reflectivity at 184nm place; Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is Si
3n
4, the material of Flouride-resistani acid phesphatase protective seam 6 is TiN, and the reflectivity of multilayer film at 178nm place can reach 0%; Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is SiC, and the material of Flouride-resistani acid phesphatase protective seam 6 is SiO
2, multilayer film is only 4.7% at the reflectivity at 221nm place; Material as the first spectrum purification layer 3 and the second spectrum purification layer 5 is SiC, and the material of Flouride-resistani acid phesphatase protective seam 6 is TiN, and multilayer film is only 8.5% at the reflectivity at 222nm place.Fig. 4 illustrates, multilayer film of the present invention effectively can suppress its exposure at the outer wave band of band for the different photoresist of sensitive band.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among the protection domain of the invention.
Claims (4)
1. there is the multilayer film of extreme ultraviolet spectral purity and radioresistance injury reinforcing, it is characterized in that, comprise substrate (1), cycle layer (2), the first spectrum purification layer (3), a Mo layer (4), the second spectrum purification layer (5) and radioresistance injury reinforcing layer (6) from bottom to up successively;
The number of cycles of described cycle layer (2) is 40-60, each cycle is made up of the Si layer (21) be arranged in order from bottom to up, the 2nd Mo layer (22), the thickness of described Si layer is 4.1nm-4.3nm, and the thickness of the 2nd Mo layer is 2.7nm-2.9nm;
The thickness of a described Mo layer (4) is 2.7nm-2.9nm;
Described first spectrum purification layer (3) is identical or different with the material of the second spectrum purification layer (5), is respectively C, SiC or Si
3n
4, thickness is respectively 4.1nm-4.3nm;
The material of described radioresistance injury reinforcing layer (6) is TiN or SiO
2, thickness is 1nm-3nm.
2. the multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing according to claim 1, it is characterized in that, the gross thickness of described first spectrum purification layer (3) and a Mo layer (4) is equal with each periodic thickness of cycle layer (2).
3. the multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing according to claim 1, is characterized in that, each periodic thickness of described cycle layer (2) is 7nm.
4. the multilayer film with extreme ultraviolet spectral purity and radioresistance injury reinforcing according to claim 1, is characterized in that, the surfaceness of described substrate (1) is less than or equal to 0.2nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190363.0A CN104749663A (en) | 2015-04-21 | 2015-04-21 | Multilayer film with extreme-ultraviolet spectral purity and resistance to irradiation damage |
| PCT/CN2015/000828 WO2016168953A1 (en) | 2015-04-21 | 2015-11-30 | Multilayer film with extreme ultraviolet spectrum purity and irradiation damage resistance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190363.0A CN104749663A (en) | 2015-04-21 | 2015-04-21 | Multilayer film with extreme-ultraviolet spectral purity and resistance to irradiation damage |
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|---|---|
| CN104749663A true CN104749663A (en) | 2015-07-01 |
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ID=53589630
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|---|---|---|---|
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| WO (1) | WO2016168953A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105445822A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Angle broadband extreme ultraviolet multi-layer film having spectrum purification function |
| CN105572769A (en) * | 2015-12-21 | 2016-05-11 | 中国科学院长春光学精密机械与物理研究所 | Extreme ultraviolet multilayer layer having spectrum purification function |
| CN105631193A (en) * | 2015-12-21 | 2016-06-01 | 中国科学院长春光学精密机械与物理研究所 | Hybrid genetic algorithm-based extreme ultraviolet multilayer film structure parameter inversion method |
| WO2016168953A1 (en) * | 2015-04-21 | 2016-10-27 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film with extreme ultraviolet spectrum purity and irradiation damage resistance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016168953A1 (en) * | 2015-04-21 | 2016-10-27 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film with extreme ultraviolet spectrum purity and irradiation damage resistance |
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| CN105572769A (en) * | 2015-12-21 | 2016-05-11 | 中国科学院长春光学精密机械与物理研究所 | Extreme ultraviolet multilayer layer having spectrum purification function |
| CN105631193A (en) * | 2015-12-21 | 2016-06-01 | 中国科学院长春光学精密机械与物理研究所 | Hybrid genetic algorithm-based extreme ultraviolet multilayer film structure parameter inversion method |
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| WO2016168953A1 (en) | 2016-10-27 |
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Application publication date: 20150701 |