CN104681404A - Production method of contact holes and wet cleaning method of semiconductor device - Google Patents
Production method of contact holes and wet cleaning method of semiconductor device Download PDFInfo
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- CN104681404A CN104681404A CN201310616522.XA CN201310616522A CN104681404A CN 104681404 A CN104681404 A CN 104681404A CN 201310616522 A CN201310616522 A CN 201310616522A CN 104681404 A CN104681404 A CN 104681404A
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- layer
- dielectric layer
- hydrophilicity
- contact hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a production method of contact holes and a wet cleaning method of a semiconductor device. The production method of the contact holes comprises the following steps that a semiconductor substrate is provided, and a dielectric layer is arranged on the semiconductor substrate; contact holes are formed in the dielectric layer; the residual dielectric layer is subjected to hydrophiling treatment; wet cleaning treatment is carried out on the dielectric layer subjected to hydrophiling treatment. The wet cleaning method of the semiconductor device comprises the following steps that the semiconductor substrate is provided, and the semiconductor substrate comprises a to-be-cleaned layer; the to-be-cleaned layer is subjected to hydrophiling treatment; wet cleaning treatment is carried out on the to-be-cleaned layer subjected to hydrophiling treatment. According to the production method of the contact holes and the wet cleaning method of the semiconductor device, the wet cleaning effect can be effectively improved, so that the performance of the semiconductor device is finally improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of manufacture method of contact hole and the wet scrubbing method of semiconductor device.
Background technology
Due to element each in integrated circuit and line quite fine, therefore, in manufacture process, if suffer the pollution of grit, metal, be easy to cause the damage of circuit function in wafer, form short circuit or open circuit etc., cause the inefficacy of integrated circuit and affect the formation of geometric properties.Therefore in manufacturing process except will getting rid of extraneous pollutant sources, IC manufacturing step is as all needed to carry out clean before High temperature diffusion, implanted ions etc.Wherein, wet clean process is a kind of cleaning way comparatively commonly used, it is under the prerequisite not destroying crystal column surface characteristic and electrical characteristics, effectively uses chemical solution (i.e. cleaning fluid) to remove the impurity such as micronic dust, metal ion or the organic substance remained on wafer.
Along with semiconductor device live width is more and more less, the making for fine pattern mainly adopts dry etching.Due in the process of dry etching, easily produce a large amount of polymer (polymer) residues, therefore generally need to carry out wet clean process after dry etching.
Be described for the wet clean process after dry method etch technology formation contact hole below.
With CF
4after adopting dry method etch technology to form contact hole in the interlayer dielectric layer of silica material as etching gas, a large amount of polymer residues will inevitably be formed at the upper surface of the inwall of contact hole and bottom and interlayer dielectric layer.Affect the electric property of the contact plunger of follow-up formation in order to avoid these polymer residues, therefore need the hydrofluoric acid (HF) first adopting dilution before carrying out subsequent technique to carry out wet-cleaned as cleaning fluid to wafer.
But after employing aforesaid way cleans wafer, find that crystal round fringes position still exists a lot of polymer residues after testing, namely cleaning fluid effectively cannot remove the polymer residues of crystal round fringes position, finally may cause the inefficacy of whole wafer.
Similarly, after the existing wet clean process cleaning wafer of employing, the problem of ubiquity crystal round fringes cleaning performance difference.
Therefore, how effectively to improve wet-cleaned effect and just become one of those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves is to provide a kind of manufacture method of contact hole and the wet scrubbing method of semiconductor device, can effectively improve wet-cleaned effect, the final performance improving semiconductor device.
For solving the problem, the invention provides a kind of manufacture method of contact hole, comprising:
Semiconductor substrate is provided, described Semiconductor substrate comprises dielectric layer;
Contact hole is formed in described dielectric layer;
Hydrophilicity-imparting treatment is carried out to remaining described dielectric layer;
Wet clean process is carried out to the described dielectric layer after hydrophilicity-imparting treatment.
Optionally, described hydrophilicity-imparting treatment comprises the remaining described dielectric layer of plasma bombardment adopting argon gas.
Optionally, the air pressure of described hydrophilicity-imparting treatment comprises 100mTorr ~ 120mTorr, and gas flow comprises 200sccm ~ 400sccm, and bias power comprises 50w ~ 100w.
Optionally, described contact hole adopts dry etching method to be formed.
Optionally, form described contact hole to comprise: the photoresist layer forming patterning on described dielectric layer; With described photoresist layer for mask adopts dry etch process to etch described dielectric layer; Cineration technics is adopted to remove described photoresist layer; Described hydrophilicity-imparting treatment and described dry etch process or described cineration technics carry out in the same chamber.
Optionally, the material of described dielectric layer is silica, and described wet clean process adopts HF solution.
Optionally, described wet clean process adopts Single-Wafer Cleaning technique.
In order to solve the problem, present invention also offers a kind of wet scrubbing method of semiconductor device, comprising:
There is provided Semiconductor substrate, described Semiconductor substrate comprises layer to be cleaned;
Hydrophilicity-imparting treatment is carried out to described layer to be cleaned;
Wet clean process is carried out to the layer described to be cleaned after hydrophilicity-imparting treatment.
Optionally, described hydrophilicity-imparting treatment comprise adopt argon gas plasma bombardment described in layer to be cleaned.
Optionally, the air pressure of described hydrophilicity-imparting treatment comprises 100mTorr ~ 120mTorr, and gas flow comprises 200sccm ~ 400sccm, and bias power comprises 50w ~ 100w.
Compared with prior art, technical scheme of the present invention has the following advantages: in the manufacture method of contact hole provided by the invention, to be formed in the dielectric layer after contact hole and before carrying out wet clean process, first hydrophilicity-imparting treatment is carried out to remaining described dielectric layer, remaining described dielectric layer is made to become hydrophily from hydrophobicity or improve the hydrophily of dielectric layer further, namely the infiltration angle of remaining described dielectric layer is reduced, thus cleaning fluid can contact with the dielectric layer after hydrophilicity-imparting treatment well when wet clean process, not only effectively can remove the polymer residues in dielectric layer surface centre position, and effectively can remove the polymer residues of dielectric layer surface marginal position, finally effectively improve wet-cleaned effect, improve the performance of semiconductor device.
Further, described hydrophilicity-imparting treatment adopts the remaining described dielectric layer of plasma bombardment of argon gas, polymer residues is made to become short chain structure from long chain polymeric structure, improve the polarity of polymer residues on described dielectric layer surface, reduce the infiltration angle of described dielectric layer, improve wet-cleaned effect; In addition, argon gas can not produce harmful effect to described dielectric layer, and cost is low, handling safety, thus further increases the performance of semiconductor device.
Further, form described contact hole to comprise: the photoresist layer forming patterning on described dielectric layer; With described photoresist layer for mask adopts dry etch process to etch described dielectric layer; Cineration technics is adopted to remove described photoresist layer; Described hydrophilicity-imparting treatment and described dry etch process or described cineration technics carry out in the same chamber, thus can Simplified flowsheet further, reduce cost of manufacture.
In the wet scrubbing method of semiconductor device provided by the invention, before carrying out wet clean process, first treat cleaning layer and carry out hydrophilicity-imparting treatment, layer to be cleaned is made to become hydrophily from hydrophobicity or improve the hydrophily of layer to be cleaned further, namely the infiltration angle of layer to be cleaned is reduced, thus cleaning fluid can contact with the layer to be cleaned after hydrophilicity-imparting treatment well when wet clean process, not only effectively can remove the polymer residues in centre position, layer to be cleaned surface, and effectively can remove the polymer residues of layer marginal surface position to be cleaned, finally improve wet-cleaned effect, improve the performance of semiconductor device.
Further, described hydrophilicity-imparting treatment adopts the plasma bombardment layer to be cleaned of argon gas, polymer residues is made to become short chain structure from long chain polymeric structure, improve the polarity of described layer to be cleaned polymer residues on the surface, reduce the infiltration angle of described layer to be cleaned, improve wet-cleaned effect; In addition, argon gas can not produce harmful effect to described layer to be cleaned, and cost is low, handling safety, thus further increases the performance of semiconductor device.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the manufacture method of the contact hole that the embodiment of the present invention provides;
Fig. 2 to Fig. 5 is the structural representation of semiconductor device corresponding to each step of manufacture method of the contact hole that the embodiment of the present invention provides.
Embodiment
As described in background, after prior art employing is dry-etched in and forms contact hole in the dielectric layer of wafer, need to adopt wet clean process to remove the polymer residues formed in etching process.But after wet clean process, but find that the marginal position of dielectric surface still exists a lot of polymer residues.
The problems referred to above Producing reason is: in dry etching process, etching gas can react with dielectric layer and form polymer residues, described polymer residues is the long chain polymeric structure comprising the elements such as C and F, therefore the polarity of the free radical of dielectric layer surface is very little, the infiltration angle of dielectric layer surface is larger, thus after dry etching, dielectric layer surface just becomes hydrophobicity from hydrophily or hydrophily is deteriorated.Follow-up wet clean process is carried out to dielectric layer surface time, cleaning fluid just easy generation dielectric layer surface repels, especially the cleaning fluid at dielectric layer surface marginal position place is more difficult is attached on wafer, thus cause the non-constant of cleaning performance, the polymer residues on dielectric layer cannot be removed completely.
For the problems referred to above, the invention provides a kind of manufacture method of contact hole, to be formed in the dielectric layer after contact hole and before carrying out wet clean process, increase the step of remaining dielectric layer being carried out to hydrophilicity-imparting treatment, reduce the infiltration angle of dielectric layer surface, thus follow-up wet clean process is carried out to dielectric layer surface time, cleaning fluid just can be attached to the optional position of dielectric layer surface well, finally improve cleaning performance, ensure that polymer residues is completely removed.
Again as stated in the Background Art, in other cases, when adopting the polymer residues on existing wet clean process cleaning wafer layer surface to be cleaned, the also problem of ubiquity layer marginal surface to be cleaned cleaning performance difference.
The problems referred to above Producing reason be also because: described polymer residues is long chain polymeric structure, therefore the polarity of the free radical on layer surface to be cleaned is very little, the infiltration angle on layer surface to be cleaned is larger, makes layer to be cleaned surface for hydrophobicity or more weak hydrophily.When treating cleaning layer surface and carrying out wet clean process, cleaning fluid is just easily treated cleaning layer surface and is produced repulsion, the cleaning fluid of layer marginal surface position especially to be cleaned is more difficult to be attached on layer to be cleaned, thus cause the non-constant of cleaning performance, the polymer residues on layer to be cleaned cannot be removed completely.
For the problems referred to above, invention further provides a kind of wet scrubbing method of semiconductor device, treating before cleaning layer carries out wet clean process, increase and treat the step that cleaning layer carries out hydrophilicity-imparting treatment, reduce the infiltration angle on layer surface to be cleaned, thus follow-up treat cleaning layer surface carry out wet clean process time, cleaning fluid just can be attached to the optional position on layer surface to be cleaned well, finally improve cleaning performance, ensure that polymer residues is completely removed.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Shown in figure 1, embodiments provide a kind of manufacture method of contact hole, comprise the following steps:
Step S1, provides Semiconductor substrate, and described Semiconductor substrate comprises silicon oxide layer;
Step S2, described silicon oxide layer is formed the photoresist layer of patterning;
Step S3, with described photoresist layer for mask adopts dry etch process to etch described silicon oxide layer;
Step S4, adopts cineration technics to remove described photoresist layer;
Step S5, adopts the remaining described silicon oxide layer of plasma bombardment of argon gas;
Step S6, carries out wet clean process to the described silicon oxide layer after bombardment.
The present embodiment makes polymer residues become short chain structure from long chain polymeric structure by adopting the remaining silicon oxide layer of plasma bombardment of argon gas, thus make remaining described silicon oxide layer become hydrophily from hydrophobicity or improve the hydrophily of silicon oxide layer further, finally when carrying out wet clean process to the silicon oxide layer after bombardment, cleaning fluid can be attached to the surface (comprising the marginal position on surface) of silicon oxide layer preferably, improve cleaning performance, ensure that polymer residues is completely removed.
Shown in figure 2, provide Semiconductor substrate 100.
Described Semiconductor substrate 100 has been formed as structures such as transistor, capacitor, metal wiring layers through FEOL usually.
The present embodiment can adopt chemical gaseous phase depositing process to form silicon oxide layer 200 on a semiconductor substrate 100, and its concrete technology is known for those skilled in the art, does not repeat them here.
Described silicon oxide layer 200 is used as dielectric layer, and its thickness determines the thickness of the contact hole of follow-up formation.
It should be noted that, in other embodiments of the invention, other material can also be selected as dielectric layer, and it does not limit the scope of the invention.
Silicon oxide layer 200 surface is now infiltrate the smaller hydrophilic surface in angle.
Shown in figure 3, described silicon oxide layer 200 forms the photoresist layer 300 of patterning.
Particularly, the present embodiment first can apply one deck photoresist layer on silicon oxide layer 200, then by techniques such as exposure, developments, patterned process is carried out to this photoresist layer, thus remove the part photoresist layer corresponding with contact hole position to be formed, remainder is the photoresist layer 300 of patterning.
Shown in figure 4, with described photoresist layer 300 for mask, etch described silicon oxide layer 200 by dry etch process, and remove the photoresist layer 300 shown in Fig. 3.
Described dry etch process can comprise plasma etching, ion beam milling and reactive ion etching (RIE) etc.
Reactive ion etching process can be adopted in the present embodiment to etch described silicon oxide layer 200, to form contact hole 500 in silicon oxide layer 200, specifically can adopt CF
4, C
3f
8, C
4f
8or CHF
3deng as etching gas.
The present embodiment can adopt cineration technics to remove photoresist layer 300 described in Fig. 4, and its concrete technology does not repeat them here.
After etching oxidation silicon layer 200 and ashing remove photoresist layer 300, a large amount of polymer residues 600 can be formed on the surface of remaining silicon oxide layer 400, these polymer residues 600 can be reacted by etching gas and silica and be generated, these polymer residues 600 comprise the elements such as C and F, and be long chain polymeric structure, thus make the polarity of the free radical on silicon oxide layer 400 surface very little, the infiltration angle on silicon oxide layer 400 surface is larger (as: 100 degree), thus now silicon oxide layer 400 just becomes hydrophobicity or hydrophily variation from original hydrophily.
In order to described polymer residues 600 can be removed well in subsequent wet cleaning process, need cleaning fluid is combined with the intimate surface of silicon oxide layer 400, this just needs silicon oxide layer 400 surface infiltration angle smaller (as: 20 degree), the hydrophily that namely surface presentation of silicon oxide layer 400 is stronger.Because the infiltration angle on now silicon oxide layer 400 surface is larger, therefore the present embodiment is before employing wet clean process removes polymer residues 600, needs first to carry out hydrophilicity-imparting treatment to remaining silicon oxide layer 400.
The remaining silicon oxide layer 400 of the plasma bombardment of argon gas can be adopted in the present embodiment, thus make polymer residues 600 become short chain structure from backbone, the polarity of the free radical on the surface of silicon oxide layer 400 becomes large, and then the infiltration angle on silicon oxide layer 400 surface reduces, finally make silicon oxide layer 400 become hydrophily from hydrophobicity or improve the hydrophily of silicon oxide layer 400 further, namely realize described hydrophilicity-imparting treatment.
Particularly, when adopting the plasma bombardment silicon oxide layer 400 of argon gas, air pressure can comprise 100mTorr ~ 120mTorr, as: 100mTorr, 110mTorr or 120mTorr etc.; Gas flow can comprise 200sccm ~ 400sccm, as: 200sccm, 300sccm or 400sccm etc.; Bias power can comprise 50w ~ 100w, as: 50w, 75w or 100w etc.
In the present embodiment, argon gas can not react with silicon oxide layer 400, therefore can not affect other performance of semiconductor device.In addition, advantages such as cost is low, handling safety of selecting argon gas also to have.
It should be noted that; in other embodiments of the invention; the silicon oxide layer 400 after hydrophilicity-imparting treatment other modes can also be adopted to realize carrying out hydrophilicity-imparting treatment to remaining silicon oxide layer 400, as long as can be made to present stronger hydrophily just all within protection scope of the present invention.
In order to improve the efficiency of hydrophilicity-imparting treatment, Simplified flowsheet and reduce cost of manufacture, described hydrophilicity-imparting treatment both can be carried out at same chamber with described dry etch process, can also carry out with described cineration technics at same chamber.
Then, with reference to figure 5, wet clean process is carried out to the silicon oxide layer 400 after hydrophilicity-imparting treatment.
The hydrofluoric acid of dilution can be adopted in the present embodiment to adopt Single-Wafer Cleaning technique to clean silicon oxide layer as cleaning fluid.Due to the hydrophily that now silicon oxide layer 400 surface presentation is stronger, therefore cleaning fluid can be attached to the optional position on silicon oxide layer 400 surface well, finally improve cleaning performance, ensure that the polymer residues 600 in Fig. 5 is completely removed, improve the performance of semiconductor device.
The embodiment of the present invention additionally provides a kind of wet scrubbing method of semiconductor device, and it can be applied in arbitrary wet clean process of semiconductor device manufacturing process, specifically can comprise the following steps.
First, provide Semiconductor substrate, described Semiconductor substrate comprises layer to be cleaned.
The material of described layer to be cleaned can be silica, and also can be other material such as germanium oxide or silicon nitride, it limit the scope of the invention.
Now, the surface of described layer to be cleaned has polymer residues, and polymer residues is long-chain party structure, and therefore the polarity of the free radical on layer surface to be cleaned is very little, the infiltration angle on layer surface to be cleaned is larger, makes layer to be cleaned surface for hydrophobicity or more weak hydrophily.
Then, hydrophilicity-imparting treatment is carried out to described layer to be cleaned.
Layer to be cleaned described in the plasma bombardment of argon gas can be adopted in the present embodiment, thus make polymer residues become short chain structure from backbone, the polarity of the free radical on the surface of layer to be cleaned becomes large, and then the infiltration angle on layer surface to be cleaned reduces, finally make layer to be cleaned become hydrophily from hydrophobicity or improve the hydrophily of layer to be cleaned further, namely realize described hydrophilicity-imparting treatment.
Particularly, when the plasma bombardment of employing argon gas layer to be cleaned, air pressure can comprise 100mTorr ~ 120mTorr, as: 100mTorr, 110mTorr or 120mTorr etc.; Gas flow can comprise 200sccm ~ 400sccm, as: 200sccm, 300sccm or 400sccm etc.; Bias power can comprise 50w ~ 100w, as: 50w, 75w or 100w etc.
It should be noted that, in other embodiments of the invention, other modes can also be adopted to realize treating cleaning layer and carry out hydrophilicity-imparting treatment, it does not limit the scope of the invention.
Finally, wet clean process is carried out to the layer described to be cleaned after hydrophilicity-imparting treatment.
The present embodiment can according to the suitable cleaning fluid of the Material selec-tion of layer to be cleaned.Due to the hydrophily that the surface presentation of now layer to be cleaned is stronger, therefore cleaning fluid can be attached to the optional position on layer surface to be cleaned well, finally improves cleaning performance, and then can improve the performance of semiconductor device.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a manufacture method for contact hole, is characterized in that, comprising:
Semiconductor substrate is provided, described Semiconductor substrate comprises dielectric layer;
Contact hole is formed in described dielectric layer;
Hydrophilicity-imparting treatment is carried out to remaining described dielectric layer;
Wet clean process is carried out to the described dielectric layer after hydrophilicity-imparting treatment.
2. the manufacture method of contact hole as claimed in claim 1, is characterized in that, described hydrophilicity-imparting treatment comprises the remaining described dielectric layer of plasma bombardment adopting argon gas.
3. the manufacture method of contact hole as claimed in claim 2, it is characterized in that, the air pressure of described hydrophilicity-imparting treatment comprises 100mTorr ~ 120mTorr, and gas flow comprises 200sccm ~ 400sccm, and bias power comprises 50w ~ 100w.
4. the manufacture method of contact hole as claimed in claim 1, is characterized in that, described contact hole adopts dry etching method to be formed.
5. the manufacture method of contact hole as claimed in claim 1, is characterized in that, form described contact hole and comprise: the photoresist layer forming patterning on described dielectric layer; With described photoresist layer for mask adopts dry etch process to etch described dielectric layer; Cineration technics is adopted to remove described photoresist layer; Described hydrophilicity-imparting treatment and described dry etch process or described cineration technics carry out in the same chamber.
6. the manufacture method of contact hole as claimed in claim 1, it is characterized in that, the material of described dielectric layer is silica, and described wet clean process adopts HF solution.
7. the manufacture method of contact hole as claimed in claim 1, is characterized in that, described wet clean process adopts Single-Wafer Cleaning technique.
8. a wet scrubbing method for semiconductor device, is characterized in that, comprising:
There is provided Semiconductor substrate, described Semiconductor substrate comprises layer to be cleaned;
Hydrophilicity-imparting treatment is carried out to described layer to be cleaned;
Wet clean process is carried out to the layer described to be cleaned after hydrophilicity-imparting treatment.
9. the wet scrubbing method of semiconductor device as claimed in claim 8, is characterized in that, described hydrophilicity-imparting treatment comprise adopt argon gas plasma bombardment described in layer to be cleaned.
10. the wet scrubbing method of semiconductor device as claimed in claim 8, it is characterized in that, the air pressure of described hydrophilicity-imparting treatment comprises 100mTorr ~ 120mTorr, and gas flow comprises 200sccm ~ 400sccm, and bias power comprises 50w ~ 100w.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310616522.XA CN104681404A (en) | 2013-11-27 | 2013-11-27 | Production method of contact holes and wet cleaning method of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310616522.XA CN104681404A (en) | 2013-11-27 | 2013-11-27 | Production method of contact holes and wet cleaning method of semiconductor device |
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| CN104681404A true CN104681404A (en) | 2015-06-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108630527A (en) * | 2018-06-20 | 2018-10-09 | 矽力杰半导体技术(杭州)有限公司 | A kind of cleaning method of contact hole |
| CN110957261A (en) * | 2018-09-26 | 2020-04-03 | 长鑫存储技术有限公司 | Preparation method of semiconductor device interconnection structure barrier layer |
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