CN104600172A - Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof - Google Patents
Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof Download PDFInfo
- Publication number
- CN104600172A CN104600172A CN201410459700.7A CN201410459700A CN104600172A CN 104600172 A CN104600172 A CN 104600172A CN 201410459700 A CN201410459700 A CN 201410459700A CN 104600172 A CN104600172 A CN 104600172A
- Authority
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- China
- Prior art keywords
- terminal
- space
- flip chip
- contact site
- chip type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000004080 punching Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 239000000084 colloidal system Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000003292 diminished effect Effects 0.000 claims description 2
- 241000218202 Coptis Species 0.000 abstract description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 7
- 238000005520 cutting process Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010009 beating Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a flip chip type LED (light-emitting diode) bracket which is used for packaging an LED chip. The LED bracket comprises a conductive terminal group and an insulation body integrally molded with the conductive terminal group, a holding cavity for holding the LED chip is formed by the conductive terminal group and the insulation body jointly; the conductive terminal group at least includes a pair of first and second terminals, the first and second terminal include contact parts electrically connected with the LED chip, and a fixed holding part located at outside of the contact part and integrally molded inside the insulation body; a gap is formed between the contact parts of the first and second terminals through a primary punching and cutting, and then the fixed holding position is extruded through a second punching, so as to compel the metal at the contact part to extend and make the gap width decrease. Without the step of laying gold threads, the flip chip type LED bracket saves cost and improves efficiency.
Description
Technical field
The present invention relates to field of LED illumination, espespecially a kind of flip chip type LED support and manufacture method thereof.
Background technology
LED support is used for packaging LED chips, generally include some plate-shaped conductive terminals and described conducting terminal is shaped in interior plastic seat body, described plastic seat body comprises encapsulation cup-like structure, described electrical contact surfaces is exposed to described encapsulation cup bottom surface, when encapsulating, described LED chip is placed on the conducting terminal bottom described encapsulation cup, the electrode of described LED chip is positioned at the upside relative with described encapsulation cup bottom surface, by beating the mode of gold thread, the electrode of described LED chip is connected on different conducting terminals respectively.
As above method, need to increase the step of beating gold thread, and gold thread is tiny, beats gold thread technique and not only causes inefficiency, and waste gold thread material when encapsulating.
Summary of the invention
The object of the present invention is to provide a kind of the flip chip type LED support and the manufacture method thereof that connect chip and conducting terminal without the need to gold thread.
For this reason, the invention provides a kind of flip chip type LED support, for packaging LED chips, described LED support comprises conducting end subgroup, and one and the insulating body of described conducting terminal composing type, described conducting end subgroup and described insulating body form the host cavity of accommodating described LED chip jointly, described conducting end subgroup at least comprises a pair first, second terminal, described first, second terminal includes the contact site be electrically connected with described LED chip, and to be positioned at outside described contact site and to be shaped in the holding parts of described insulating body, described first, space is formed by first time die cut between the contact site of the second terminal, then carry out second time punching press and the cold draw forcing described contact site is extruded to described holding parts position, described gap length is diminished.
After described first time die cut, the width in described space is more than or equal to the thickness of described conducting end subgroup, is about 0.25mm.
Described second time punching press to after the extruding of described holding parts, through the extension of metal, within the width in described space is down to 0.2mm.
Described second time punching press extrudes the upper surface of described holding parts, and form groove at the upper surface of described holding parts.
The side that described LED chip is provided with two electrodes is assembled in described host cavity towards described conducting terminal, described LED chip is across described space, and described two electrodes are positioned at both sides, described space in electrical contact with the contact site of first, second terminal described respectively.
For this reason, present invention also offers a kind of flip chip type LED support manufacture method, comprise the steps
Step one, provide plate-shape metal, carry out first time punching press and form first, second terminal, the holding parts that first, second terminal described comprises relative contact site respectively and is positioned at outside described contact site, cut between the contact site of first, second terminal described and form space, first, second terminal described connects as one through material strip;
Step 2, the holding parts position upper surface of first, second terminal described to be extruded, utilize the ductility of metal to force the contact site of first, second terminal described relatively to extend to reduce the width in described space;
Step 3, described first, second terminal connected as one carried out injection mo(u)lding operation and form insulating body, in described holding parts takes shape in by described insulating body.
Also comprise step 4, LED chip is provided, described LED chip is provided with the side of two electrodes in the face of described conducting end subgroup, described LED chip is across described space, described two electrodes are positioned at both sides, described space and contact with the contact site of first, second terminal described respectively, in described LED chip is packaged in by encapsulation transparent colloid in described host cavity subsequently.
After above-mentioned steps one completes, the width in described space is more than or equal to the thickness of described conducting end subgroup, and conducting terminal thickness is 0.25mm.
After described step 2, through the extension of metal, within the width in described space is down to 0.2mm.
After described step 2, the upper surface of described holding parts forms groove.
Compared to prior art, flip chip type LED support of the present invention and manufacture method thereof are formed between described contact site be cut open first, second terminal interstitial by first metallic plate being carried out first time punching press, then, thinned by second time on the upside of the holding parts extruding described conducting end subgroup, the ductility of metal is utilized to force the contact site end of first, second terminal described relatively to extend, within being decreased to 0.2mm to make the width in described space, so both can ensure the strength character of product, the requirement of flip-chip can have been realized again.
Accompanying drawing explanation
Fig. 1 is the stereogram of flip chip type LED support of the present invention when not encapsulating.
Fig. 2 is the stereogram after flip chip type LED support of the present invention encapsulation.
Fig. 3 is the cutaway view along A-A dotted line described in Fig. 1.
Fig. 4 is the vertical view after flip chip type LED support conducting terminal of the present invention first time punching press cuts.
Fig. 5 is the vertical view after the punching press of flip chip type LED support conducting terminal of the present invention second time cuts.
Fig. 6 is the stereogram after the punching press of flip chip type LED support conducting terminal of the present invention second time cuts.
Embodiment
Refer to shown in Fig. 1 to Fig. 3, flip chip type LED support of the present invention comprises conducting end subgroup 10 and integrally shaping with described conducting end subgroup 10 insulating body 20, and described conducting end subgroup 10 forms the host cavity 50 of accommodating LED chip 30 jointly with described insulating body 20.
Described conducting end subgroup 10 comprises at least one pair of conducting terminal, be respectively relative the first terminal 11 and the second terminal 12, first, second terminal 11,12 described includes the contact site 16 that is electrically connected with described LED chip 30 and to be positioned at outside described contact site 16 and to be shaped in the holding parts 17 of described insulating body 20.Described the first terminal 11, second terminal 12 forms from one piece of metallic plate punching, and first, second terminal 11 described, is punched between 12 and forms space 13, injects plastic body isolation in described space 13.Described LED chip 30 is provided with first, second electrode 31 a side, 32, described LED chip 30 adopts the form of upside-down mounting, namely described first electrode 31, second electrode 32 is in the face of described conducting end subgroup 10 side, above the plastic body of described LED chip 30 across described space 13, described first electrode 31, lay respectively at described both sides, space 13 and in electrical contact with the contact site 16 of first, second terminal 11,12 described with the second electrode 32.But the installation of LED chip 30 liang of electrodes 31,32 contact requires that described space can not be greater than 0.2mm.
Refer to shown in Fig. 3 to Fig. 6, described space 13 is cut by punching press to form, be limited to the restriction of punching press cutting process, the width H in described space can not be less than the thickness of described conducting end subgroup 10, simultaneously in order to ensure the intensity of product, the thickness of described conducting terminal 10 should be not less than 0.25mm, so first, second terminal 11 described, the space 13 width H between 12 is usually slightly larger than about 0.25mm.The present invention adopts first by first, second terminal 11 described, 12 cut formation space 13, then, to be thinned by punching press on the upside of the holding parts 17 extruding described conducting end subgroup 10 and to form groove 15, the ductility of metal is utilized to force contact site 16 end of first, second terminal 11,12 described relatively to extend, within being decreased to 0.2mm to make described space 13, so both can ensure the strength character of product, the requirement of flip-chip can have been realized again.
Refer to shown in Fig. 1 to Fig. 6, will the manufacture method of flip chip type LED support of the present invention be introduced below:
Step one, provide plate-shape metal, carry out first time punching press and form first, second terminal 11,12, the holding parts 17 that first, second terminal 11,12 described comprises relative contact site 16 respectively and is positioned at outside described contact site 16, first, second terminal 11 described, cut between the contact site 16 of 12 and form space 13, the width H in described space 13 is roughly suitable with the thickness of described conducting end subgroup 10, is about 0.25mm, first, second terminal 11,12 described connects as one through material strip 14;
Step 2, to first, second terminal 11 described, holding parts 17 surface of position of 12 carries out extruding and forms groove 15, the ductility of metal is utilized to force the contact site 16 of first, second terminal 11,12 described relatively to extend with within the width H to 0.2mm reducing described space 13;
Step 3, described first, second terminal 11,12 connected as one carried out injection mo(u)lding operation and form insulating body 20, in described holding parts 17 takes shape in by described insulating body 20;
Step 4, provide LED chip 30, described LED chip is provided with two electrodes 31, the side of 32 is in the face of described conducting end subgroup 10, described LED chip 30 is across described space 13, described two electrodes 31,32 are positioned at both sides, described space 13 and contact with the contact site 16 of first, second terminal 11,12 described respectively, in described LED chip 30 is packaged in by encapsulation transparent colloid 40 subsequently.
Certainly, the present invention is also applicable to the LED chip of other specifications to the requirement of space 13 distance, and the 0.2mm width described in this case is only one of them execution mode, and along with the change of LED chip, its width can be changed thereupon.
Flip chip type LED support of the present invention and manufacture method thereof form by first metallic plate being carried out first time punching press first, second terminal 11 being cut open between described contact site 16 and forming space 13,12, then, thinned by second time on the upside of the holding parts 17 extruding described conducting end subgroup 10, the ductility of metal is utilized to force first, second terminal 11 described, contact site 16 end of 12 extends relatively, within being decreased to 0.2mm to make the width in described space 13, so both can ensure the strength character of product, the requirement of flip-chip can have been realized again.
Claims (10)
1. a flip chip type LED support, for packaging LED chips, described LED support comprises conducting end subgroup, and one and the insulating body of described conducting terminal composing type, described conducting end subgroup and described insulating body form the host cavity of accommodating described LED chip jointly, described conducting end subgroup at least comprises a pair first, second terminal, described first, second terminal includes the contact site be electrically connected with described LED chip, and to be positioned at outside described contact site and to be shaped in the holding parts of described insulating body, it is characterized in that: described first, space is formed by first time die cut between the contact site of the second terminal, then carry out second time punching press and the cold draw forcing described contact site is extruded to described holding parts position, described gap length is diminished.
2. flip chip type LED support as claimed in claim 1, is characterized in that: after described first time die cut, the width in described space is more than or equal to the thickness of described conducting end subgroup, is about 0.25mm.
3. flip chip type LED support as claimed in claim 1, is characterized in that: described second time punching press to after described holding parts extruding, through the extension of metal, within the width in described space is down to 0.2mm.
4. flip chip type LED support as claimed in claim 3, is characterized in that: described second time punching press extrudes the upper surface of described holding parts, and forms groove at the upper surface of described holding parts.
5. flip chip type LED support as claimed in claim 1, it is characterized in that: the side that described LED chip is provided with two electrodes is assembled in described host cavity towards described conducting terminal, described LED chip is across described space, and described two electrodes are positioned at both sides, described space in electrical contact with the contact site of first, second terminal described respectively.
6. a flip chip type LED support manufacture method, is characterized in that: comprise the steps
Step one, provide plate-shape metal, carry out first time punching press and form first, second terminal, the holding parts that first, second terminal described comprises relative contact site respectively and is positioned at outside described contact site, cut between the contact site of first, second terminal described and form space, first, second terminal described connects as one through material strip;
Step 2, the holding parts position upper surface of first, second terminal described to be extruded, utilize the ductility of metal to force the contact site of first, second terminal described relatively to extend to reduce the width in described space;
Step 3, described first, second terminal connected as one carried out injection mo(u)lding operation and form insulating body, in described holding parts takes shape in by described insulating body.
7. flip chip type LED support manufacture method as claimed in claim 6, it is characterized in that: also comprise step 4, LED chip is provided, described LED chip is provided with the side of two electrodes in the face of described conducting end subgroup, described LED chip is across described space, described two electrodes are positioned at both sides, described space and contact with the contact site of first, second terminal described respectively, in described LED chip is packaged in by encapsulation transparent colloid in described host cavity subsequently.
8. flip chip type LED support manufacture method as claimed in claim 6, it is characterized in that: after above-mentioned steps one completes, the width in described space is more than or equal to the thickness of described conducting end subgroup, and conducting terminal thickness is 0.25mm.
9. flip chip type LED support manufacture method as claimed in claim 6, is characterized in that: after described step 2, through the extension of metal, within the width in described space is down to 0.2mm.
10. flip chip type LED support manufacture method as claimed in claim 9, is characterized in that: after described step 2, and the upper surface of described holding parts forms groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410459700.7A CN104600172A (en) | 2014-09-10 | 2014-09-10 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410459700.7A CN104600172A (en) | 2014-09-10 | 2014-09-10 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104600172A true CN104600172A (en) | 2015-05-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410459700.7A Pending CN104600172A (en) | 2014-09-10 | 2014-09-10 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN104600172A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106555964A (en) * | 2015-12-29 | 2017-04-05 | 江西宝荣光电科技有限公司 | A kind of LED light source device prepared for the LED light source device of headlight and with which |
| CN106952990A (en) * | 2016-01-07 | 2017-07-14 | 深圳市斯迈得半导体有限公司 | A kind of chip-scale LED package device and its manufacture craft |
| CN107046089A (en) * | 2016-02-05 | 2017-08-15 | 深圳市斯迈得半导体有限公司 | A kind of anti-vulcanization and halogenation and the upside-down mounting envelope LED/light source with anti-oxidation function |
| CN107845705A (en) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | The manufacture method for the Novel LED light source that base material is manufactured by vacuum sputtering technique |
| CN107845718A (en) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | The preparation method that a kind of base material chooses the LED light source of flexible new structure |
| CN107949922A (en) * | 2015-09-08 | 2018-04-20 | 首尔伟傲世有限公司 | Light emission diode package member |
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2014
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107949922A (en) * | 2015-09-08 | 2018-04-20 | 首尔伟傲世有限公司 | Light emission diode package member |
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| CN107046089A (en) * | 2016-02-05 | 2017-08-15 | 深圳市斯迈得半导体有限公司 | A kind of anti-vulcanization and halogenation and the upside-down mounting envelope LED/light source with anti-oxidation function |
| CN107845705A (en) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | The manufacture method for the Novel LED light source that base material is manufactured by vacuum sputtering technique |
| CN107845718A (en) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | The preparation method that a kind of base material chooses the LED light source of flexible new structure |
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Effective date of registration: 20170808 Address after: 523808, Guangdong, Dongguan province Songshan Lake hi tech Industrial Development Zone, No. 4 industrial North Road, building on the first floor Applicant after: Dongguan wisdom Photoelectric Technology Co., Ltd. Address before: 523808, No. 4, No. 1, industrial North Road, Songshan hi tech Industrial Development Zone, Guangdong, Dongguan Applicant before: Guangdong Changying Precision Technology Co., Ltd. |
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Application publication date: 20150506 |
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