CN104576275A - Uniformity correction control system for ion implanter - Google Patents
Uniformity correction control system for ion implanter Download PDFInfo
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- CN104576275A CN104576275A CN201310507612.5A CN201310507612A CN104576275A CN 104576275 A CN104576275 A CN 104576275A CN 201310507612 A CN201310507612 A CN 201310507612A CN 104576275 A CN104576275 A CN 104576275A
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- controller
- faraday
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- control
- ion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a uniformity correction control system for an ion implanter. The system comprises a dose controller (1), an ion-beam scanning system (2), a motor controller (3), a moving target platform (4), a uniformity controller (5), moving faraday (6), closed-loop faraday (7) and angle faraday (8). The specification provides detailed descriptions about the uniformity correction control method of the ion implanter and provides concrete embodiments. The invention relates to the ion implanter, and belongs to the field of semiconductor manufacturing.
Description
Technical field
The present invention relates to a kind of semiconductor device manufacturing control system, particularly relate to a kind of ion implantation uniformity and correct the system controlled.
Background technology
Ion implantor is one of implantation equipment of most critical during semiconductor device manufactures, a kind of by guiding impurity to inject semiconductor wafer, thus change the equipment of wafer conductivity, wherein the degree of depth of Doped ions injection and the uniformity of density all directly determine the quality injecting wafer.Along with the development of semiconductor technology, live width is more and more thinner, also more and more higher to the requirement of the automaticity of ion implantor, mainly reduces manpower intervention during note sheet, reduces and pollute, improve the production efficiency of equipment and the reliability of complete machine.Ion implantor uniformity controlling technology is one of key technology of ion implantor, its operation principle be based on various control and method of measurement and device by ion by the dose uniformity ground set, be accurately injected into whole wafer surface.In order to ensure stable performance and the repetition of shallow junction transistor and field effect transistor on sheet, in ion implantation doping process, require the repeatability to implantation dosage, Implantation Energy, injection, injection angle, inject elemental purity and implantation dosage uniformity accurate closed-loop control in real time and automatically adjust.The invention provides a kind of ion implantor uniformity and correct control system, the method structural transmission speed is fast, and real-time is good, and control precision is high.
Summary of the invention
The uniformity that the invention discloses in ion implantation machine system corrects the composition structure of control system.This invention is used for ion implantor, can reach real-time control, realize controlling the degree of precision of ion implantation, and control effects is stablized.
The present invention is achieved through the following technical solutions: ion implantor uniformity controller control unit distribution map is shown in Fig. 1, major control object: the part such as Dose Controller, ion beam scanning systems, electric machine controller, running target platform, uniformity controller, mobile faraday, closed loop faraday, angle faraday.
Dose Controller: gather the line value that each faraday system obtains, and with uniformity controller real-time communication, receive corresponding control signal, and control ion beam dose and motor movement track;
Ion beam scanning systems: the voltage of gated sweep plate, realizes the even injection of horizontal direction;
Electric machine controller: control the motion of running target platform, realizes evenly injecting.
Running target platform: place wafer place, moved by motor controller controls.
Uniformity controller: uniformity controller is commander and the Consultation Center of whole uniformity control system, main task calculates scanning times and vertical sweep speed according to setting implantation dosage; According to the at every turn real-time dose value that dosage collector is sent here, perform corresponding control algolithm, export and control each horizontal scanning waveform cycle; The related data of Real-time Collection scanning process; When occurring that in scanning process certain abnormal termination of having to scans, recording this breakpoint relevant information, the tasks such as scanning work can be recovered at this breakpoint from new so that follow-up.
Mobile faraday: before injection, measures the parameter of line, carries out the nonuniformity calibration of line;
Angle faraday: the depth of parallelism measuring line;
Closed loop faraday: during injection, measures line in real time and regulates implantation dosage;
The implementation method of uniformity ion implantation control system is:
Uniformity controller, as the control centre of uniformity control system, control should possess very high stability and accuracy.The ripe framework of the real-time measurement and control system of NI is adopted to carry out design of hardware and software.NI motion controller realizes the control to servo-driver, provides triggering signal to control system simultaneously; Control system changes PWM triangular wave slop control sweeping generator sweep waveform, receives the status signal that scanning system is imported into simultaneously; Integrating dose meter device carries out line collection after obtaining the triggering signal of the real-time measurement and control system of NI, and transmits and the real-time measurement and control system of NI according to collection situation.
Horizontal scanning waveform generator in ion beam scanning systems is according to the distribution of line size at X axis (level to), the scanning voltage slope value of corresponding each point is obtained by algorithm, and these values are stored in the RAM of sweeping generator in advance, in the process performing scanning, scanning occurs from RAM, to read these numerical value in real time to produce voltage waveform.Achieve X like this to sweep speed along with X is to the proportional adjustment of velocity magnitude corresponding to each position point, thus ensure that the uniformity that each scanning is injected ion and distributed at X axis.Vertical scanning is mechanical movement scanning, and kinetic control system controls linear electric motors and makes average rate and move up and down.
In motion process, provide synchronizing signal to horizontal direction scanning system in real time, only have the ion that guarantee injects under the prerequisite that scanning is synchronous with vertical scan direction in the horizontal direction to reach even at wafer water directional spreding and vertical direction distribution simultaneously.Dosage collector Real-time Collection line, and the dose value scanned each time is obtained by integral operation, then give uniformity controller in real time by this dose value.
The present invention has following remarkable advantage:
1. the dynamic process control of ion implantation adopts NI control system, and then the inhomogeneities of the nonparallelism and scanning of measuring bundle accurately in real time corrects, and achieves good effect;
2. the depth of parallelism of ion beam is good, and multiple batches of injection is reproducible;
3., by LabVIEW software programming, not only can realize uniformity controlling, and visual control can be carried out to relevant parameter;
4. system platform is ripe, and reliability is high.
Accompanying drawing explanation
Fig. 1 is system principle diagram of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail:
In Fig. 1, uniformity controller is by the hardware platform of the real-time measurement and control system of American National instrument (NI) as uniformity controller.It is made up of parts such as Measurement & Control device, FPGA data collecting card, motion controllers.With Dose Controller, target platform, electric machine controller, ion beam scanning systems, and the common composition homogeneity control system such as Faraday cup.
Dose Controller system realizes the control to scan module by control NI motion controller, and control system carrys out the motion of gated sweep generator by PWM.Motion controller provides triggering signal to send into control system; Control to move the uniformity that movable Faraday cup measures each point when bundle scans along scanning direction simultaneously, Dose Controller carries out line collection by Faraday cup after obtaining the triggering signal of scanning system, after signal transacting, obtain collection signal, for changing implantation dosage.If equal, then evenly, otherwise uneven, by signal Real-time Feedback to collimated beam scanning subsystem, control system adjusts the slope of scanning PWM triangular wave waveform in real time, extends or reduces sweep time, to control implantation dosage Uniform Scanning waveform, status signal is sent to control system simultaneously.
Control System Software adopts NI LabVIEW embedded technology comprising the SPI/IRQ interface routine (SPI/IRQ Program) based on LabVIEW FPGA module, the uniformity controlling program (UCC Program) based on LabVIEW RT and based on Ni Motion Assistant linear electric motors and mobile faraday's motion control program (Motion Program).Real time capable module can be connected directly to floating-point analysis that reconfigurable I/O (RIO) hardware carries out determining and I/O integrated.Being downloaded to FPGA on NI RIO equipment by writing the graphical code of NI LabVIEW, creating self-defined hardware, thus realize self-defining timing, triggering, synchronous and control.
Specific embodiment of the present invention is described in detail operation principle of the present invention, range of application.For persons skilled in the art, not deviating from any apparent change done it under operation principle of the present invention and application prerequisite, the protection range of present specification description and claims specification all can not exceeded.
Claims (2)
1. a homogeneity correction control system for ion implantor, this system comprises (1) Dose Controller (2) ion beam scanning systems (3) electric machine controller (4) running target platform (5) uniformity controller (6) mobile faraday (7) closed loop faraday (8) angle faraday.Wherein, (1) Dose Controller carries out communication by SPI and uniformity controller.(5) motion controller in uniformity controller controls (3) electric machine controller and adjusts the motion of running target platform.(1) Dose Controller by gather in (6) mobile faraday (7) closed loop faraday (8) angle faraday and (2) ion beam scanning systems restraint beam current signal that mouth host measuring cup sends back by analysis after, control signal is sent to (2) ion beam scanning systems (3) electric machine controller, control ion implantation dosage, injection phase, the controling parameters such as sweep speed.
2. a kind of uniformity of ion implantor corrects control system as claimed in claim 1, it is characterized in that using (1) Dose Controller, is realized the control of correcting overall uniformity by communication.Whole system completes in real time to inject and controls under the control of (1) Dose Controller with (5) uniformity controller.After the beam current signal sent back by restrainting mouth host measuring cup in collection (6) mobile faraday (7) closed loop faraday (8) angle faraday and (2) ion beam scanning systems carries out analytic operation, send control signal in electric machine controller, revise motor running orbit, the angle of ion beam is revised in the magnetic field of adjustment parallel beam correcting magnet, reaches the requirement that uniform parallel injects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310507612.5A CN104576275A (en) | 2013-10-24 | 2013-10-24 | Uniformity correction control system for ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310507612.5A CN104576275A (en) | 2013-10-24 | 2013-10-24 | Uniformity correction control system for ion implanter |
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| Publication Number | Publication Date |
|---|---|
| CN104576275A true CN104576275A (en) | 2015-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310507612.5A Pending CN104576275A (en) | 2013-10-24 | 2013-10-24 | Uniformity correction control system for ion implanter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097400A (en) * | 2015-08-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Ion injection system and method |
| CN105867338A (en) * | 2016-05-25 | 2016-08-17 | 上海华力微电子有限公司 | Intelligent technological interlocking control method and system for ion implanter |
| CN107346723A (en) * | 2017-07-13 | 2017-11-14 | 厦门芯光润泽科技有限公司 | A kind of ion implantation device for chip |
| CN108732638A (en) * | 2018-05-18 | 2018-11-02 | 上海华虹宏力半导体制造有限公司 | The correction detection method of ion channel path system |
| CN110896039A (en) * | 2018-09-13 | 2020-03-20 | 三星电子株式会社 | Wafer quality inspection method and apparatus and semiconductor device manufacturing method |
-
2013
- 2013-10-24 CN CN201310507612.5A patent/CN104576275A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097400A (en) * | 2015-08-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Ion injection system and method |
| CN105097400B (en) * | 2015-08-03 | 2017-10-17 | 京东方科技集团股份有限公司 | Ion implant systems and method |
| CN105867338A (en) * | 2016-05-25 | 2016-08-17 | 上海华力微电子有限公司 | Intelligent technological interlocking control method and system for ion implanter |
| CN105867338B (en) * | 2016-05-25 | 2018-08-14 | 上海华力微电子有限公司 | A kind of the intelligent art interlock control method and system of ion implantation apparatus |
| CN107346723A (en) * | 2017-07-13 | 2017-11-14 | 厦门芯光润泽科技有限公司 | A kind of ion implantation device for chip |
| CN107346723B (en) * | 2017-07-13 | 2019-02-19 | 厦门芯光润泽科技有限公司 | A kind of ion implantation device for chip |
| CN108732638A (en) * | 2018-05-18 | 2018-11-02 | 上海华虹宏力半导体制造有限公司 | The correction detection method of ion channel path system |
| CN108732638B (en) * | 2018-05-18 | 2020-07-17 | 上海华虹宏力半导体制造有限公司 | Correction detection method of ion channel path system |
| CN110896039A (en) * | 2018-09-13 | 2020-03-20 | 三星电子株式会社 | Wafer quality inspection method and apparatus and semiconductor device manufacturing method |
| CN110896039B (en) * | 2018-09-13 | 2024-06-04 | 三星电子株式会社 | Wafer quality inspection method and apparatus, and semiconductor device manufacturing method |
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Addressee: Zhongkexin Electronic Equipment Co., Ltd., Beijing Document name: Notification of before Expiration of Request of Examination as to Substance |
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Application publication date: 20150429 |