CN104537983B - Image element circuit and its driving method, display device - Google Patents
Image element circuit and its driving method, display device Download PDFInfo
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Abstract
The present invention provides a kind of image element circuit and its driving method, display device, belongs to organic light-emitting diode display technical field, and which can solve the problems, such as that existing image element circuit cannot be avoided threshold voltage shift.The image element circuit of the present invention includes：Switching transistor, driving transistor, storage capacitance, Organic Light Emitting Diode, and：Initialization module, for resetting the voltage at storage capacitance two ends under the control of upper level gate drive signal and the first control signal；Compensating module, for, under the control of upper level gate drive signal, the voltage for connecting one end of driving transistor grid to storage capacitance is compensated；Whether light emitting control module, for making decision electric current by Organic Light Emitting Diode in the control of the second control signal.
Description
Technical field
The invention belongs to organic light-emitting diode display technical field, and in particular to a kind of image element circuit and its driving side
Method, display device.
Background technology
Organic Light Emitting Diode (OLED) display device has big visual angle, fast response time, contrast height, energy-conservation, adaptation
Many advantages, such as property is strong, is therefore increasingly widely applied.For the most basic of organic LED display device
Image element circuit be 2T1C structures.As shown in figure 1, the image element circuit of 2T1C structures includes switching transistor T1, driving transistor
T2, storage capacitance C, Organic Light Emitting Diode OLED, these devices can this grade of gate drive signal Sn, data signal Vdata,
First supply voltage Vdd (high voltage power supply signal), the control of second source voltage Vss (low-tension supply signal is such as grounded) are issued
Light.Wherein, the luminous intensity of Organic Light Emitting Diode OLED is determined by the electric current I by which, and electric current I is equal to and leads to
Overdrive the electric current of transistor T2.As driving transistor T2 is worked in the saturated condition, therefore there is formula：I=K (Vgs-
Vth)2, in formula, K is coefficient, and Vgs is the gate source voltage of driving transistor T2, and passes through control data signal Vdata and can adjust
Gate source voltage Vgs, and then adjust electric current I, that is, the luminosity for determining Organic Light Emitting Diode OLED.But can from formula
See, electric current I is also relevant with the threshold voltage vt h of driving transistor T2, and the use with driving transistor T2, its threshold voltage
Vth can gradually change (threshold voltage shift), unpredictable so as to cause the luminosity of Organic Light Emitting Diode OLED to produce
Change, affect display effect.
Content of the invention
The present invention cannot be avoided the problem of threshold voltage shift for existing image element circuit, there is provided one kind can eliminate threshold value
The image element circuit that variation affects.
The technical scheme adopted by solution present invention problem is a kind of image element circuit, and which includes：Switching transistor, drive
Dynamic transistor, storage capacitance, Organic Light Emitting Diode, and：
Initialization module, for resetting storage capacitance under the control of upper level gate drive signal and the first control signal
The voltage at two ends；
Compensating module, for, under the control of upper level gate drive signal, connecting driving transistor grid to storage capacitance
The voltage of one end of pole is compensated；
Whether light emitting control module, for making decision electric current by organic light-emitting diodes in the control of the second control signal
Pipe.
Preferably, the grid of the switching transistor connects this grade of gate drive signal, and the first pole connects data signal,
Second pole connects the first pole of storage capacitance；Second pole of the storage capacitance connects the grid of driving transistor；The driving
First pole of transistor connects the first supply voltage, the second pole connection light emitting control module and compensating module；The organic light emission
The first end connection light emitting control module of diode, the second end connection second source voltage and compensating module.
It may further be preferable that the initialization module includes the first transistor, transistor seconds, and wherein, described first
The grid connection upper level gate drive signal of transistor, the first pole connect initial voltage, and the of the second pole connection storage capacitance
One end, wherein described initial voltage turn on can driving transistor；The grid of the transistor seconds connects the first control signal,
First pole connects initial voltage, and the second pole connects the second end of storage capacitance.
It may further be preferable that the compensating module includes third transistor, wherein, the grid of the third transistor connects
One-level gate drive signal is connected, the first pole connects the second pole of driving transistor, the second pole connection second of third transistor
Supply voltage.
It may further be preferable that the light emitting control module includes the 4th transistor, and wherein, the grid of the 4th transistor
Pole connects the second control signal, and the first pole connects the second pole of driving transistor, and the second pole of the 4th transistor connects organic
First pole of optical diode.
It may further be preferable that the driving transistor, switching transistor, the first transistor, transistor seconds, trimorphism
Body pipe, the 4th transistor are N-type TFT.
It may further be preferable that the driving transistor is N-type TFT；The switching transistor, first crystal
Pipe, transistor seconds, third transistor, the 4th transistor are P-type TFT.
The technical scheme adopted by solution present invention problem is a kind of driving method of image element circuit, wherein, described
Image element circuit is above-mentioned image element circuit, and the driving method of the image element circuit includes：
Initial phase, upper level gate drive signal and the first control signal control initialization module are opened, will storage
The voltage at electric capacity two ends resets；
Compensated stage, upper level gate drive signal control and compensation module are opened, and connect driving transistor to storage capacitance
The voltage of one end of grid is compensated；
Write phase, this grade of gate drive signal controlling switch transistor are opened, and make data signal write storage capacitance；
Glow phase, the second control signal control light emitting control module are opened, and make organic light-emitting diode.
Preferably, the image element circuit be above-mentioned whole transistors be all N-type TFT image element circuit, described
The driving method of image element circuit is specifically included：
Initial phase：The upper level gate drive signal, the first control signal are high level, and described level grid drives
Dynamic signal, the second control signal are low level；
Compensated stage：The upper level gate drive signal is high level, and described level gate drive signal, first control
Signal, the second control signal are low level；
Write phase：Described level gate drive signal is high level, and the upper level gate drive signal, first control
Signal, the second control signal are low level；
Glow phase：Second control signal be high level, described level gate drive signal, upper level raster data model
Signal, the first control signal are low level.
Preferably, the image element circuit is above-mentioned in addition to driving transistor, and other transistors are all P-type TFTs
Image element circuit, the driving method of the image element circuit specifically includes：
Initial phase：The upper level gate drive signal, the first control signal are low level, and described level grid drives
Dynamic signal, the second control signal are high level；
Compensated stage：The upper level gate drive signal is low level, and described level gate drive signal, first control
Signal, the second control signal are high level；
Write phase：Described level gate drive signal is low level, and the upper level gate drive signal, first control
Signal, the second control signal are high level；
Glow phase：Second control signal be low level, described level gate drive signal, upper level raster data model
Signal, the first control signal are high level.
The technical scheme adopted by solution present invention problem is a kind of display device, and which includes above-mentioned pixel electricity
Road.
Compensating module is provided with the image element circuit of the present invention, so as to the threshold voltage of driving transistor can be eliminated to display
Affect, improve display effect, it is to avoid the impact of threshold voltage shift；Meanwhile, many of which module is driven by upper level grid
The control of dynamic signal, and gate drive signal at different levels to be display device Central Plains originally have, be controlled using these signals, can
Ensure the simple structure of image element circuit, be easily achieved.
Description of the drawings
Fig. 1 is the schematic diagram of existing image element circuit；
Module Division schematic diagrams of the Fig. 2 for a kind of image element circuit of embodiments of the invention；
Schematic diagrams of the Fig. 3 for a kind of image element circuit of embodiments of the invention；
Driver' s timing figures of the Fig. 4 for a kind of image element circuit of embodiments of the invention；
Wherein, reference is：C, storage capacitance；M1, the first transistor；M2, transistor seconds；M3, third transistor；
M4, the 4th transistor；T1, switching transistor；T2, driving transistor；OLED, Organic Light Emitting Diode；Vc, initial voltage；
Vdata, data signal；Vdd, the first supply voltage；Vss, second source voltage；Sn, this grade of gate drive signal；Sn-1, on
One-level gate drive signal.
Specific embodiment
For making those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
The present embodiment provides a kind of image element circuit, as shown in Fig. 2 which includes：Switching transistor T1, driving transistor T2,
Storage capacitance C, Organic Light Emitting Diode OLED, and：
Initialization module, deposits for resetting under the control of upper level gate drive signal Sn-1 and the first control signal EM
Storing up electricity holds the voltage at C two ends；
Compensating module, for, under the control of upper level gate drive signal Sn-1, driving crystal to the connection of storage capacitance C
The voltage of one end of pipe T2 grids is compensated；
Whether light emitting control module, for making decision electric current by organic light-emitting diodes in the control of the second control signal EN
Pipe OLED.
Wherein, gate drive signal be by gate line provide for the signal that makes each row pixel open in turn, due to each
Bar grid line is to provide Continuity signal in turn, and therefore " upper level gate drive signal Sn-1 " refers to corresponding in the image element circuit
The signal of that grid line turned on before gate line, i.e. image element circuit are gone back and which in addition to being connected with the gate line corresponding to which
The gate line of lastrow is connected.
Wherein, data signal Vdata is provided by data wire, for controlling the luminance of Organic Light Emitting Diode OLED
The drive signal of degree.
Wherein, the first control signal EM, the second control signal EN be by the control line that is separately provided provide for controlling
The signal of the image element circuit of the present embodiment.
Compensating module is provided with the image element circuit of the present embodiment, so as to the threshold voltage vt h of driving transistor T2 can be eliminated
Impact to showing, improves display effect, it is to avoid the impact of threshold voltage vt h drifts；Meanwhile, many of which module is all by upper
One-level gate drive signal Sn-1 controls, and gate drive signal at different levels to be display device Central Plains originally have, using these
Signal is controlled and can ensure the simple structure of image element circuit, be easily achieved.
Preferably, as shown in figure 3, the concrete structure of above image element circuit can be as follows：The grid of switching transistor T1
Connect this grade of gate drive signal Sn, the first pole connects data signal Vdata, and the second pole connects the first pole of storage capacitance C；Deposit
Storing up electricity holds the grid that second pole of C connects driving transistor T2；First pole of driving transistor T2 connects the first supply voltage
Vdd, the second pole connection light emitting control module and compensating module；The first end connection light emitting control mould of Organic Light Emitting Diode OLED
Block, the second end connection second source voltage Vss and compensating module.
Wherein, the first supply voltage Vdd and second source voltage Vss refer to for drive Organic Light Emitting Diode OLED send out
Two supply voltages of light, they are respectively used to the anode and negative electrode for connecting Organic Light Emitting Diode OLED.Typically, first
Supply voltage Vdd is high voltage, and for connecting the anode of Organic Light Emitting Diode OLED, second source voltage Vss is low-voltage
(as being ground connection), for connecting the negative electrode of Organic Light Emitting Diode OLED.
It is furthermore preferred that initialization module includes the first transistor M1, transistor seconds M2, wherein, the first transistor M1's
Grid connects upper level gate drive signal Sn-1, and the first pole connects initial voltage Vc, and the second pole connects the first of storage capacitance C
End, wherein initial voltage Vc turn on can driving transistor T2；The grid of transistor seconds M2 connects the first control signal EM, the
One pole connects initial voltage Vc, and the second pole connects the second end of storage capacitance C.
Wherein, " initial voltage Vc " is used for initializing storage capacitance C, and its value is sufficiently large, so as to make drive
Dynamic transistor T2 conductings.
It is furthermore preferred that compensating module includes third transistor M3, and wherein, the grid connection upper level grid of third transistor M3
Pole drive signal Sn-1, the first pole connect the second pole of driving transistor T2, second electricity of the second pole connection of third transistor M3
Source voltage Vss.
It is furthermore preferred that light emitting control module includes the 4th transistor M4, and wherein, the grid connection second of the 4th transistor M4
Control signal EN, the first pole connect the second pole of driving transistor T2, the second pole connection organic light emission two of the 4th transistor M4
First pole of pole pipe OLED.
It is furthermore preferred that above-mentioned driving transistor T2 is N-type TFT；And switching transistor T1, the first transistor M1,
Transistor seconds M2, third transistor M3, the 4th transistor M4 can be used uniformly across N-type TFT, or can also unify to adopt
Use P-type TFT.
The present embodiment also provides the driving method of more than one image element circuits, and which includes：
Initial phase, upper level gate drive signal Sn-1 and the first control signal EM control initialization module are opened,
The voltage at storage capacitance C two ends is reset；
Compensated stage, upper level gate drive signal Sn-1 control and compensations module are opened, and the connection of storage capacitance C are driven brilliant
The voltage of one end of body pipe T2 grids is compensated；
Write phase, this grade of gate drive signal Sn controlling switch transistors T1 are opened, and are write data signal Vdata and are deposited
Storing up electricity holds C；
Glow phase, the second control signal EN control light emitting control module are opened, and make Organic Light Emitting Diode OLED light.
Preferably, with reference to above specific image element circuit, the driving method and working method of circuit are carried out in detail
Introduce.Wherein, with driving transistor T2, switching transistor T1, the first transistor M1, transistor seconds M2, third transistor M3,
4th transistor M4 is the image element circuit of N-type TFT and illustrates as an example, as shown in figure 4, its driving method
Specifically include：
T1 initial phases：Upper level gate drive signal Sn-1, the first control signal EM are high level, and this grade of grid drives
Dynamic signal Sn, the second control signal EN are low level.
In this stage, upper level gate drive signal Sn-1 and the first control signal EM are high level, therefore first crystal
Pipe M1, transistor seconds M2, the conducting of third transistor M3, initial voltage Vc are simultaneously directed storage capacitance C two ends, storage capacitance C
Two ends no-voltage is poor.Meanwhile, initial voltage Vc is sufficiently large, therefore turns on can driving transistor T2.
T2 compensated stages：Upper level gate drive signal Sn-1 is high level, and this grade of gate drive signal Sn, first control
Signal EM, the second control signal EN are low level.
In this stage, the first control signal EM is changed into low level, therefore transistor seconds M2 shut-offs, b point voltages no longer by
It is fixed as initial voltage Vc.Due to there is the reasons such as leakage current, thus the second end of storage capacitance C can pass through third transistor M3 by
Gradually discharge, so that b point voltages are gradually lowered.Drive when the gate source voltage Vgs of driving transistor T2 is reduced to threshold voltage vt h
Dynamic transistor T2 shut-offs, b point voltages no longer change.As driving transistor T2 is N-type TFT, therefore its gate source voltage
Vgs deducts drain voltage (second source voltage Vss) equal to grid voltage (b point voltages), thus obtain as gate source voltage Vgs be
During Vth, b point voltages should be (Vss+Vth).In the above process, the first end of storage capacitance C connects yet by the first transistor M1
Initial voltage Vc is met, therefore a point voltages remain Vc, so as to the voltage difference of (i.e. between a points and b points) between storage capacitance C two ends
For Vc- (Vss+Vth).
T3 write phases：This grade of gate drive signal Sn is high level, and upper level gate drive signal Sn-1, first control
Signal EM, the second control signal EN are low level.
In this stage, this grade of gate drive signal Sn is high level, so as to data signal Vdata passes through switching transistor
T1 is loaded into the first end (a points) of storage capacitance C, and due to the bootstrap effect of storage capacitance C, therefore the voltage difference at its two ends should be protected
Hold constant, thus b point voltages also occur corresponding change, are changed into Vdata-Vc+ (Vss+Vth).
T4 glow phases：Second control signal EN is high level, and this grade of gate drive signal Sn, upper level raster data model are believed
Number Sn-1, the first control signal EM are low level.
In this stage, the second control signal EN is high level, so that the 4th transistor M4 conductings, Organic Light Emitting Diode
OLED starts to light.Now, the grid voltage of driving transistor T2 is Vdata-Vc+ (Vss+Vth), and drain voltage is Vss, by
This understands：
I=K (Vgs-Vth)2=K (Vdata-Vc+Vss+Vth-Vss-Vth)2=K (Vdata-Vc)2.
The electric current namely by the electric current of Organic Light Emitting Diode OLED, which determines Organic Light Emitting Diode OLED's
Brightness.It can be seen that, relevant with data signal Vdata by the electric current of Organic Light Emitting Diode OLED in this stage, and brilliant with driving
The threshold voltage vt h of body pipe T2 is unrelated, it is achieved thereby that the compensation to threshold voltage vt h, can precise control organic light-emitting diodes
The brightness of pipe OLED.
Obviously, although driving method above is introduced so that whole transistors are all as N-type TFT as an example,
It is to be understood that, according to driving transistor T2 be N-type TFT, and switching transistor T1, the first transistor M1, second
Transistor M2, third transistor M3, the 4th transistor M4 are also feasible for the mode of P-type TFT, differ only in
Now need all to be inverted the low and high level of all of drive signal.Specifically, driving method now includes：
Initial phase：Upper level gate drive signal Sn-1, the first control signal EM be low level, this grade of raster data model
Signal Sn, the second control signal EN are high level；
Compensated stage：Upper level gate drive signal Sn-1 is low level, and this grade of gate drive signal Sn, the first control are believed
Number EM, the second control signal EN are high level；
Write phase：This grade of gate drive signal Sn is low level, and upper level gate drive signal Sn-1, the first control are believed
Number EM, the second control signal EN are high level；
Glow phase：Second control signal EN be low level, this grade of gate drive signal Sn, upper level gate drive signal
Sn-1, the first control signal EM are high level.
The present embodiment also provides a kind of display device, and which includes above-mentioned image element circuit.
That is, can be with multiple above-mentioned image element circuits and corresponding signal line group into the display dress that can be shown
Put；Certainly, also include in the display device that other known elements such as substrate, driving chip, power supply, here are not described in detail.
Specifically, the display device can be：Electronic Paper, oled panel, mobile phone, panel computer, television set, display,
Any product or part with display function such as notebook computer, DPF, navigator.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary enforcement for adopting
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, various modifications and improvement can be made, these modifications and improvement are also considered as protection scope of the present invention.
Claims (8)
1. a kind of image element circuit, including：Switching transistor, driving transistor, storage capacitance, Organic Light Emitting Diode, its feature
It is, the image element circuit also includes：
Initialization module, for resetting storage capacitance two ends under the control of upper level gate drive signal and the first control signal
Voltage；
Compensating module, for, under the control of upper level gate drive signal, connecting driving transistor grid to storage capacitance
The voltage of one end is compensated；
Whether light emitting control module, for making decision electric current by Organic Light Emitting Diode in the control of the second control signal；
The grid of the switching transistor connects this grade of gate drive signal, and the first pole connects data signal, and the connection of the second pole is deposited
The first pole that storing up electricity is held；
Second pole of the storage capacitance connects the grid of driving transistor；
First pole of the driving transistor connects the first supply voltage, the second pole connection light emitting control module and compensating module；
The first end connection light emitting control module of the Organic Light Emitting Diode, the second end connection second source voltage and compensation mould
Block；
The initialization module includes the first transistor, transistor seconds, wherein,
The grid connection upper level gate drive signal of the first transistor, the first pole connect initial voltage, and the second pole connects
The first end of storage capacitance, wherein described initial voltage turn on can driving transistor；
The grid of the transistor seconds connects the first control signal, and the first pole connects initial voltage, the second pole connection storage electricity
The second end for holding；
The compensating module includes third transistor, wherein,
The grid connection upper level gate drive signal of the third transistor, the first pole connect the second pole of driving transistor,
The second pole connection second source voltage of third transistor.
2. image element circuit according to claim 1, it is characterised in that the light emitting control module includes the 4th transistor,
Wherein,
The grid of the 4th transistor connects the second control signal, and the first pole connects the second pole of driving transistor, and the 4th is brilliant
Second pole of body pipe connects the first pole of Organic Light Emitting Diode.
3. image element circuit according to claim 2, it is characterised in that
The driving transistor, switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are
N-type TFT.
4. image element circuit according to claim 2, it is characterised in that
The driving transistor is N-type TFT；
The switching transistor, the first transistor, transistor seconds, third transistor, the 4th transistor are p-type film crystal
Pipe.
5. a kind of driving method of image element circuit, it is characterised in that the image element circuit is any one in Claims 1-4
Described image element circuit, the driving method of the image element circuit include：
Initial phase, upper level gate drive signal and the first control signal control initialization module are opened, by storage capacitance
The voltage at two ends resets；
Compensated stage, upper level gate drive signal control and compensation module are opened, and connect driving transistor grid to storage capacitance
The voltage of one end compensate；
Write phase, this grade of gate drive signal controlling switch transistor are opened, and make data signal write storage capacitance；
Glow phase, the second control signal control light emitting control module are opened, and make organic light-emitting diode.
6. the driving method of image element circuit according to claim 5, it is characterised in that the image element circuit is claim
Image element circuit described in 3, the driving method of the image element circuit are specifically included：
Initial phase：The upper level gate drive signal, the first control signal are high level, described level raster data model letter
Number, the second control signal be low level；
Compensated stage：The upper level gate drive signal is high level, and described level gate drive signal, the first control are believed
Number, the second control signal be low level；
Write phase：Described level gate drive signal is high level, and the upper level gate drive signal, the first control are believed
Number, the second control signal be low level；
Glow phase：Second control signal is high level, and described level gate drive signal, upper level raster data model are believed
Number, the first control signal be low level.
7. the driving method of image element circuit according to claim 5, it is characterised in that the image element circuit is claim
Image element circuit described in 4, the driving method of the image element circuit are specifically included：
Initial phase：The upper level gate drive signal, the first control signal are low level, described level raster data model letter
Number, the second control signal be high level；
Compensated stage：The upper level gate drive signal is low level, and described level gate drive signal, the first control are believed
Number, the second control signal be high level；
Write phase：Described level gate drive signal is low level, and the upper level gate drive signal, the first control are believed
Number, the second control signal be high level；
Glow phase：Second control signal is low level, and described level gate drive signal, upper level raster data model are believed
Number, the first control signal be high level.
8. a kind of display device, it is characterised in that include：
Image element circuit in Claims 1-4 described in any one.
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| US11170715B2 (en) * | 2016-11-18 | 2021-11-09 | Boe Technology Group Co., Ltd. | Pixel circuit, display panel, display device and driving method |
| CN106782286B (en) | 2017-03-06 | 2020-01-17 | 京东方科技集团股份有限公司 | Display device, display panel and pixel driving circuit |
| CN106981269B (en) | 2017-06-05 | 2018-12-14 | 京东方科技集团股份有限公司 | A kind of pixel circuit and its driving method, display panel and display device |
| CN107274828B (en) | 2017-06-09 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of pixel circuit and its driving method, display device |
| CN107680536B (en) * | 2017-10-26 | 2019-07-09 | 京东方科技集团股份有限公司 | Pixel circuit, its driving method and organic light emitting display panel, display device |
| CN109920374B (en) * | 2017-12-13 | 2020-12-22 | 京东方科技集团股份有限公司 | Pixel driving circuit, control method thereof, display panel and electronic equipment |
| CN110060637B (en) * | 2019-05-28 | 2022-02-01 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method, display panel and display device |
| CN111312170A (en) * | 2019-11-13 | 2020-06-19 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit and display device |
| CN111445849A (en) * | 2020-04-30 | 2020-07-24 | 京东方科技集团股份有限公司 | Array substrate, electroluminescent display panel and display device |
| CN114373425B (en) * | 2022-01-17 | 2023-09-26 | 深圳市华星光电半导体显示技术有限公司 | Driving circuit, display panel and driving method |
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| KR100560780B1 (en) * | 2003-07-07 | 2006-03-13 | 삼성에스디아이 주식회사 | Pixel circuit in OLED and Method for fabricating the same |
| KR100865396B1 (en) * | 2007-03-02 | 2008-10-24 | 삼성에스디아이 주식회사 | Organic light emitting display |
| KR100893482B1 (en) * | 2007-08-23 | 2009-04-17 | 삼성모바일디스플레이주식회사 | Organic Light Emitting Display and Driving Method Thereof |
| KR20140022671A (en) * | 2012-08-14 | 2014-02-25 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN103886838B (en) * | 2014-03-24 | 2016-04-06 | 京东方科技集团股份有限公司 | Pixel compensation circuit, array base palte and display device |
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