CN104465292A - Pretreatment method for ion implanter - Google Patents
Pretreatment method for ion implanter Download PDFInfo
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- CN104465292A CN104465292A CN201410710134.2A CN201410710134A CN104465292A CN 104465292 A CN104465292 A CN 104465292A CN 201410710134 A CN201410710134 A CN 201410710134A CN 104465292 A CN104465292 A CN 104465292A
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- China
- Prior art keywords
- ion
- pretreatment
- ion implantor
- implantor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002203 pretreatment Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 31
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 27
- 238000005468 ion implantation Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008485 antagonism Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a pretreatment method for an ion implanter. The method includes two pretreatment stages, in the first pretreatment stage, pretreatment gas flows into an ion source reaction chamber of the ion implanter, and the ion source reaction chamber is cleaned; in the second pretreatment stage, ion source energy is adjusted to 50 keV, and the terminal voltage is adjusted to 10 kV, so that preset beams are generated, emitted along a beam channel of the ion implanter and used for cleaning the ion implanter. According to the method, boron difluoride is adopted for replacing Ar gas and serves as the pretreatment gas for cleaning treatment, pretreatment time is shortened, a production period is shortened, cleaning efficiency and source change efficiency are improved, uniformity of ion beams is guaranteed, and cleaning efficiency is as high as 80% to 95%.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of preprocess method improving the ion implantor production cycle.
Background technology
While semiconductor fabrication development, wafer fabrication is also progressively expanding production capacity, injection technology is as a ring very important in semiconductor process flow, especially the ion implantation step that integrated leading portion relates to is also quite a lot of, and thus the efficiency of ion implantation is particularly crucial to the contribution of the production capacity of manufacturing works.
Ion implantation of a great variety, requires that board can not switch between homology kind usually.Therefore needed to carry out a step or multistep preliminary treatment (pretreatment) before changing source, pass into argon gas (Ar), (purge) process is cleaned to ion source reative cell (source chamber) part; Then ion source energy (source HV) is added to 20kev, end voltage (terminal HV) is added to 40kev, to produce Ar+ line, make it along beam channel (beam guide) injection, thus reach the object to whole ion implantor (imp) clean.
When board is after ion implantation completes, reative cell and beam channel all can there is deposit 1 (attachment containing multiple element) in various degree produce, carry out preliminary treatment iff by Ar gas, deposit 1 still can remain on conduit wall, as illustrated in figs. ia and ib.When carrying out object ion source and injecting, deposit 1 can volatilize in the situation of being heated, and with interfering ion bundle 2, thus affects beam purity.
Chinese patent (CN1977351A) discloses a kind of Plasma ion implantation method of substrate, and described method comprises: providing package contains process chamber, in the source of process indoor production plasma, in process chamber, supports that the platen of substrate and speeding-up ion enter the plasma ion implantation system of the voltage source of substrate from plasma; Deposit new coating on the interior surfaces of a process chamber, described coating is similar to the deposited film produced by the Plasma ion implantation of substrate on composition; Before deposition new coating, by using the inner surface of one or more active cleaning precursor removing Jiu Molai cleaning process room; According to Plasma ion implantation method carry out substrate Plasma ion implantation and after the Plasma ion implantation of one or more substrate repeated washing process chamber inner surface and deposition new coating step.
This patent solves and the process chamber in lining treatment system can be kept constant condition, thus ensure the repeatability of process control, but do not solve when carrying out object ion source and injecting, deposit can volatilize in the situation of being heated, with interfering ion bundle, thus affect the problem of beam purity.
Chinese patent (CN102668016A) discloses a kind of ion implant systems and method, the cooling of impurity gas in impurity gas fed lines is provided, cause heating and the decomposition of impurity gas due to the heat of arc chamber generation with antagonism, such as use the boron source material of such as B2F4, or the substitute of other BF3.There is described herein the setting of various arc chamber heat management, and the change of plasma characteristics, particular flow setting, the optimization of clean process, power management, balanced deflection, extraction optics, sedimental detection in flow channel, and the optimization of source service life, to realize the valid function of ion implant systems.
This patent by improving treatment process and system, thus achieve injector enhancing, improve treatment effect, extend operation lifetime, and achieve the accumulation of non-volatile material in the ion source region minimizing injector apparatus.But do not solve when carrying out object ion source and injecting, deposit can volatilize in the situation of being heated, and with interfering ion bundle, thus affects the problem of beam purity.
Summary of the invention
For the problems referred to above that existing preprocess method exists, now provide a kind of and be intended to realize to improve changing source efficiency, improve the production cycle and keeping the preprocess method of ion implantor of the homogeneity of ion beam of ion implantor.
Concrete technical scheme is as follows:
A preprocess method for ion implantor, comprises two pretreatment stages;
At the first pretreatment stage, the ion source reative cell to described ion implantor passes into a pretreatment gas, carries out clean to described ion source reative cell;
At the second pretreatment stage, by ion source energy adjustment to 50keV, end voltage is adjusted to 10kV, to produce default line, described default line is penetrated, for carrying out clean to described ion implantor along the beam channel of ion implantor.
Preferably, described pretreatment gas adopts boron difluoride.
Preferably, the time of described first pretreatment stage consumption is between 5min to 10min.
Preferably, the time of described second pretreatment stage consumption is between 2min to 5min.
Preferably, an arc current for described ion implantor is 5A.
Preferably, an arc voltage for described ion implantor is 110V.
Preferably, needed to close described ion source energy and described end voltage before described first pretreatment stage.
The beneficial effect of technique scheme:
Adopt boron difluoride to replace Ar gas to carry out clean as pretreatment gas, shorten pretreatment time, improve the production cycle, and height clean and changes source efficiency, and ensure that the homogeneity of ion beam, wherein, cleaning efficiency is up to 80% ~ 95%.
Accompanying drawing explanation
Fig. 1 a-1b carries out pretreated schematic diagram for adopting argon gas as pretreatment gas;
Fig. 2 is the preliminary treatment efficiency comparative curve chart of prior art technology.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all belongs to the scope of protection of the invention.
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
A preprocess method for ion implantor, comprises two pretreatment stages;
At the first pretreatment stage, the ion source reative cell to ion implantor passes into a pretreatment gas, carries out clean to ion source reative cell;
At the second pretreatment stage, by ion source energy adjustment to 50keV, end voltage is adjusted to 10kV, to produce default line, default line is penetrated, for carrying out clean to ion implantor along the beam channel of ion implantor.
In the present embodiment, pretreatment gas adopts boron difluoride.Adopt boron difluoride to replace Ar gas to carry out clean as pretreatment gas, shorten pretreatment time, improve the production cycle, and height clean and changes source efficiency, and ensure that the homogeneity of ion beam, wherein, cleaning efficiency is up to 80% ~ 95%.
In existing preprocessing process, usually argon gas is carried out clean as pretreatment gas, 10min ~ 20min is about in the time that the first pretreatment stage consumes, the time that preliminary treatment second pretreatment stage consumes is about 5min ~ 10min, can difference a little to some extent according to the different time of a front source kind, cleaning efficiency is about 70 ~ 85%, as shown in Figure 2 curve
represent argon gas, in Fig. 2, abscissa represents pretreatment time, and ordinate represents preliminary treatment efficiency.
Boron difluoride is adopted to carry out clean as pretreatment gas in the present embodiment, be 5min ~ 10min in pretreated first pretreatment stage spent time, the time that preliminary treatment second pretreatment stage consumes is 2min ~ 5min, can slightly difference according to the different time of last source kind, overall time is about 7min ~ 15min, cleaning efficiency is about 80% ~ 95%, as shown in Figure 2 curve
represent boron difluoride.
Various element is rich in deposit on ion source reative cell and some reflecting curtains of back segment, the situation of being heated, the homogeneity affecting follow-up line can be evaporated, and adopt boron difluoride as pretreatment gas, roc atomic group in boron difluoride can additional chemical etching effect, improve cleaning efficiency.
Its operation principle is:
BF
2＝B++2[F]+e，
y[F]+x[R]＝RxFy(g)，
Wherein R element comprises H, Ge, C etc., and g represents volatilizable gas, and boron difluoride can carry out reaction with residual element after a upper source kind ion implantation and generate volatile gas, thus reaches cleaning performance.
In a preferred embodiment, needed to close ion source energy and end voltage before the first pretreatment stage;
An arc current for ion implantor is 5A, and an arc voltage for ion implantor is 110V.As shown in table 1, table 1 changes source (argon gas is as pretreatment gas) for ion implantor tradition and improves the parameter comparison table of rear (boron difluoride is as pretreatment gas).
Table 1a
Table 1b
In one preferably execution mode, after a upper source kind ion implantation completes, when switching next source kind, first close ion source energy, end voltage, rated voltage and play arc current voltage, boron difluoride gas is passed in arc chamber, carry out part clean to ion source reative cell, this is the first pretreatment stage, and Best Times is 10min; Then by ion source energy adjustment to 50keV, end voltage is adjusted to 10kV, to produce BF3+ line, is pulled electrode sucking-off, and this is the second pretreatment stage, and Best Times is 3min.Total cleaning efficiency can reach 95%, and the more traditional Ar gas disposal of pretreatment time can shorten half the time, thus improves the production cycle of board, is conducive to the homogeneity of succeeding target source ion bundle simultaneously.
The foregoing is only preferred embodiment of the present invention; not thereby embodiments of the present invention and protection range is limited; to those skilled in the art; should recognize and all should be included in the scheme that equivalent replacement done by all utilizations specification of the present invention and diagramatic content and apparent change obtain in protection scope of the present invention.
Claims (7)
1. a preprocess method for ion implantor, is characterized in that, comprises two pretreatment stages;
At the first pretreatment stage, the ion source reative cell to described ion implantor passes into a pretreatment gas, carries out clean to described ion source reative cell;
At the second pretreatment stage, by ion source energy adjustment to 50keV, end voltage is adjusted to 10kV, to produce default line, described default line is penetrated, for carrying out clean to described ion implantor along the beam channel of ion implantor.
2. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, described pretreatment gas adopts boron difluoride.
3. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, the time that described first pretreatment stage consumes is between 5min to 10min.
4. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, the time that described second pretreatment stage consumes is between 2min to 5min.
5. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, an arc current for described ion implantor is 5A.
6. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, an arc voltage for described ion implantor is 110V.
7. the preprocess method of ion implantor as claimed in claim 1, is characterized in that, need to close described ion source energy and described end voltage before described first pretreatment stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410710134.2A CN104465292B (en) | 2014-11-28 | 2014-11-28 | Pretreatment method for ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410710134.2A CN104465292B (en) | 2014-11-28 | 2014-11-28 | Pretreatment method for ion implanter |
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| Publication Number | Publication Date |
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| CN104465292A true CN104465292A (en) | 2015-03-25 |
| CN104465292B CN104465292B (en) | 2017-05-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869976A (en) * | 2016-03-31 | 2016-08-17 | 信利（惠州）智能显示有限公司 | Operating method and cleaning method for ion implantation apparatus |
| CN111081516A (en) * | 2019-12-27 | 2020-04-28 | 华虹半导体(无锡)有限公司 | Cleaning method for ion implanter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0992494A (en) * | 1995-09-19 | 1997-04-04 | Anelva Corp | Electrode device of cvd device |
| CN1159074A (en) * | 1995-12-22 | 1997-09-10 | 三星电子株式会社 | Ion implanter and ion implanting method using the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869976A (en) * | 2016-03-31 | 2016-08-17 | 信利（惠州）智能显示有限公司 | Operating method and cleaning method for ion implantation apparatus |
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| CN111081516A (en) * | 2019-12-27 | 2020-04-28 | 华虹半导体(无锡)有限公司 | Cleaning method for ion implanter |
| CN111081516B (en) * | 2019-12-27 | 2022-10-04 | 华虹半导体(无锡)有限公司 | Cleaning method of ion implanter |
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| Publication number | Publication date |
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| CN104465292B (en) | 2017-05-03 |
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