CN104451818A - Insulating metal plate and preparation method thereof - Google Patents
Insulating metal plate and preparation method thereof Download PDFInfo
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- CN104451818A CN104451818A CN201410654338.9A CN201410654338A CN104451818A CN 104451818 A CN104451818 A CN 104451818A CN 201410654338 A CN201410654338 A CN 201410654338A CN 104451818 A CN104451818 A CN 104451818A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 19
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 238000010292 electrical insulation Methods 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000012153 distilled water Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 238000007743 anodising Methods 0.000 claims description 5
- 238000006386 neutralization reaction Methods 0.000 claims description 4
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010406 cathode material Substances 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 229940078494 nickel acetate Drugs 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000000176 sodium gluconate Substances 0.000 claims description 3
- 229940005574 sodium gluconate Drugs 0.000 claims description 3
- 235000012207 sodium gluconate Nutrition 0.000 claims description 3
- 235000010288 sodium nitrite Nutrition 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 239000003822 epoxy resin Substances 0.000 abstract description 7
- 229920000647 polyepoxide Polymers 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000009671 shengli Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
本发明公开了一种绝缘金属板及其制作方法，绝缘金属板是在金属基板(铝基板/铝合金基板)的表面直接制备阳极氧化层(氧化铝薄膜)，氧化铝薄膜具有良好的电绝缘性，可以作为绝缘层。本发明的有益之处在于：本发明的绝缘金属板，由于将氧化铝薄膜直接作为绝缘金属板的绝缘层使用，而氧化铝薄膜具有很高电绝缘性、优良热耗散特性和较好抗热冲击性能，所以本发明的绝缘金属板具有较强的散热能力和较高的可靠性，是理想的衬底材料之一；采用本发明的方法可在金属基板表面直接形成具有很高电绝缘性、优良热耗散特性和较好抗热冲击性能的氧化铝薄膜，无需再叠压一层环氧树脂，有效降低了生产成本。
The invention discloses an insulated metal plate and a manufacturing method thereof. The insulated metal plate is prepared directly on the surface of a metal substrate (aluminum substrate/aluminum alloy substrate) with an anodic oxidation layer (aluminum oxide film), and the aluminum oxide film has good electrical insulation properties and can be used as an insulating layer. The benefit of the present invention is that: the insulating metal plate of the present invention uses the aluminum oxide film directly as the insulating layer of the insulating metal plate, and the aluminum oxide film has high electrical insulation, excellent heat dissipation characteristics and good resistance to heat dissipation. thermal shock performance, so the insulated metal plate of the present invention has strong heat dissipation capability and high reliability, and is one of the ideal substrate materials; the method of the present invention can be directly formed on the surface of the metal substrate with high electrical insulation The aluminum oxide film with excellent heat dissipation characteristics and good thermal shock resistance does not need to be laminated with a layer of epoxy resin, which effectively reduces the production cost.
Description
技术领域technical field
本发明涉及一种绝缘金属板及其制作方法，属于电子材料技术领域。The invention relates to an insulating metal plate and a manufacturing method thereof, belonging to the technical field of electronic materials.
背景技术Background technique
1969年日本三洋公司发明了绝缘金属基板(IMS)，其具有较好的热耗散特性，能够满足承载器件基板的散热要求，已经在微电子封装等许多领域得到了成功的应用。In 1969, Sanyo Corporation of Japan invented the insulated metal substrate (IMS), which has good heat dissipation characteristics and can meet the heat dissipation requirements of the substrate of the carrier device, and has been successfully applied in many fields such as microelectronic packaging.
现有的绝缘金属基板通常采用下述方法制备而来：首先采用阳极氧化处理铝基板，然后在铝基板的阳极氧化层表面叠压一层环氧树脂，在环氧树脂表面叠压一层铜箔作为布线层，环氧树脂层作为绝缘层。The existing insulated metal substrates are usually prepared by the following method: firstly, the aluminum substrate is anodized, and then a layer of epoxy resin is laminated on the surface of the anodized layer of the aluminum substrate, and a layer of copper is laminated on the surface of the epoxy resin. The foil acts as the wiring layer and the epoxy layer acts as the insulating layer.
由于绝缘金属基板采用环氧树脂层作为绝缘层，环氧树脂层的热导率很低，所以使得绝缘金属基板的热导率也很低，绝缘金属基板热传导性能差则不利于热量扩散和器件运行温度降低，从而会导致元器件寿命变短、功率输出降低。Since the insulated metal substrate uses an epoxy resin layer as the insulating layer, the thermal conductivity of the epoxy resin layer is very low, so the thermal conductivity of the insulated metal substrate is also very low, and the poor thermal conductivity of the insulated metal substrate is not conducive to heat diffusion and devices. Operating temperatures are reduced, which results in shorter component life and reduced power output.
发明内容Contents of the invention
为解决现有技术的不足，本发明的目的在于提供一种机械性能好、热导率高、成本低的绝缘金属板，以及该绝缘金属板的制作方法。In order to solve the deficiencies of the prior art, the purpose of the present invention is to provide an insulated metal plate with good mechanical properties, high thermal conductivity and low cost, and a manufacturing method of the insulated metal plate.
为了实现上述目标，本发明采用如下的技术方案：In order to achieve the above object, the present invention adopts the following technical solutions:
一种绝缘金属板，其特征在于，由金属基板和阳极氧化层组成，前述阳极氧化层直接制备在前述金属基板的表面，金属基板为铝基板或者铝合金基板，阳极氧化层为具有良好电绝缘性的氧化铝薄膜。An insulated metal plate, characterized in that it consists of a metal substrate and an anodized layer, the aforementioned anodized layer is directly prepared on the surface of the aforementioned metal substrate, the metal substrate is an aluminum substrate or an aluminum alloy substrate, and the anodized layer has good electrical insulation permanent aluminum oxide film.
前述的绝缘金属板，其特征在于，通过采用硫酸阳极氧化工艺直接在金属基板的表面制备阳极氧化层得来，具体包括如下步骤：The aforementioned insulated metal plate is characterized in that it is obtained by directly preparing an anodized layer on the surface of the metal substrate by adopting a sulfuric acid anodic oxidation process, specifically comprising the following steps:
(1)除油：除去金属基板表面的油污，晾干，前述金属基板为铝基板或者铝合金基板；(1) degreasing: remove the oil stain on the surface of the metal substrate, and dry, the aforementioned metal substrate is an aluminum substrate or an aluminum alloy substrate;
(2)碱蚀：用碱蚀液进一步清洗金属基板表面的油污，并清除金属基板表面的自然氧化膜和划痕；(2) Alkali etching: use alkaline etching solution to further clean the oil on the surface of the metal substrate, and remove the natural oxide film and scratches on the surface of the metal substrate;
(3)水洗：金属基板用蒸馏水进行多重清洗，直至表面清洁；(3) Water washing: the metal substrate is washed multiple times with distilled water until the surface is clean;
(4)中和、出光：用5％的硝酸溶液浸洗金属基板10～30s，进行酸碱中和及出光；(4) Neutralization and light emission: immerse the metal substrate with 5% nitric acid solution for 10-30 seconds, perform acid-base neutralization and light emission;
(5)二次水洗：用蒸馏水浸洗金属基板；(5) Secondary water washing: immerse the metal substrate with distilled water;
(6)阳极氧化：采用180-250g/L的硫酸溶液作为阳极氧化液，阴极材料采用紫铜，温度控制在22±2℃，电压控制在16±1V，阳极电流密度控制在0.8A/dm2，阳极氧化时间控制在120-150min；(6) Anodizing: use 180-250g/L sulfuric acid solution as the anode oxidation solution, the cathode material is copper, the temperature is controlled at 22±2°C, the voltage is controlled at 16±1V, and the anode current density is controlled at 0.8A/dm 2 , the anodizing time is controlled at 120-150min;
(7)封闭：对金属基板进行封闭处理。(7) Sealing: sealing the metal substrate.
前述的绝缘金属板，其特征在于，在步骤(2)中，每1L碱蚀液中含有50g氢氧化钠、45g亚硝酸钠、50g葡萄糖酸钠。The aforementioned insulating metal plate is characterized in that, in step (2), every 1L of alkaline etching solution contains 50g of sodium hydroxide, 45g of sodium nitrite, and 50g of sodium gluconate.
前述的绝缘金属板，其特征在于，在步骤(7)中，封闭处理金属基板的过程为：The aforementioned insulated metal plate is characterized in that, in step (7), the process of sealing and processing the metal substrate is:
用5g/L醋酸镍溶液加热到98℃对金属基板进行封闭处理5-10min。Heat the metal substrate to 98°C with 5g/L nickel acetate solution for 5-10min.
本发明的有益之处在于：The benefits of the present invention are:
1、本发明的绝缘金属板，由于将氧化铝薄膜(即阳极氧化层2)直接作为绝缘金属板的绝缘层使用，而氧化铝薄膜具有很高电绝缘性、优良热耗散特性和较好抗热冲击性能，所以本发明的绝缘金属板具有较强的散热能力和较高的可靠性，是理想的衬底材料之一；1. The insulating metal plate of the present invention uses the aluminum oxide film (i.e. anodized layer 2) directly as the insulating layer of the insulating metal plate, and the aluminum oxide film has very high electrical insulation, excellent heat dissipation characteristics and better Thermal shock resistance, so the insulated metal plate of the present invention has strong heat dissipation capability and high reliability, and is one of the ideal substrate materials;
2、采用本发明的方法可在金属基板表面直接形成具有很高电绝缘性、优良热耗散特性和较好抗热冲击性能的氧化铝薄膜，该氧化铝薄膜(即阳极氧化层2)直接作为绝缘金属板的绝缘层使用，无需再叠压一层环氧树脂，有效降低了生产成本。2. The method of the present invention can be used to directly form an aluminum oxide film with high electrical insulation, excellent heat dissipation characteristics and better thermal shock resistance on the surface of the metal substrate. Used as the insulating layer of the insulating metal plate, there is no need to laminate a layer of epoxy resin, which effectively reduces the production cost.
附图说明Description of drawings
图1是带有铜布线层的绝缘金属板的示意图。Figure 1 is a schematic diagram of an insulated metal plate with a copper wiring layer.
图中附图标记的含义：1-金属基板，2-阳极氧化层，3-铜布线层。The meanings of reference signs in the figure: 1-metal substrate, 2-anodized layer, 3-copper wiring layer.
具体实施方式Detailed ways
以下结合具体实施例对本发明作具体的介绍。The present invention will be specifically introduced below in conjunction with specific embodiments.
参照图1，本发明的绝缘金属板，其是通过硫酸阳极氧化工艺直接在金属基板1的表面制备阳极氧化层2，金属基板1为铝基板或者铝合金基板，阳极氧化层2为氧化铝薄膜，氧化铝薄膜具有良好的电绝缘性，可以作为金属基板1与铜布线层3之间的绝缘层。With reference to Fig. 1, the insulating metal plate of the present invention, it is to directly prepare anodized layer 2 on the surface of metal substrate 1 by sulfuric acid anodic oxidation process, and metal substrate 1 is aluminum substrate or aluminum alloy substrate, and anodized layer 2 is aluminum oxide film , the aluminum oxide film has good electrical insulation, and can be used as an insulating layer between the metal substrate 1 and the copper wiring layer 3 .
由于将氧化铝薄膜(即阳极氧化层2)直接作为绝缘金属板的绝缘层使用，而氧化铝薄膜具有很高电绝缘性、优良热耗散特性和较好抗热冲击性能，所以本发明的绝缘金属板具有较好的机械性能、较强的散热能力和较高的热导率。Because the aluminum oxide film (i.e. the anodized layer 2) is directly used as the insulating layer of the insulating metal plate, and the aluminum oxide film has high electrical insulation, excellent heat dissipation characteristics and good thermal shock resistance, so the present invention The insulated metal plate has good mechanical properties, strong heat dissipation capability and high thermal conductivity.
另外，由于本发明的绝缘金属板上无需再叠压一层环氧树脂，所以本发明的绝缘金属板的生产成本更低。In addition, since the insulating metal plate of the present invention does not need to be laminated with a layer of epoxy resin, the production cost of the insulating metal plate of the present invention is lower.
下面介绍上述绝缘金属板的制作方法。The manufacturing method of the above-mentioned insulated metal plate will be described below.
制作绝缘金属板采用的是硫酸阳极氧化工艺，直接在金属基板1的表面制备阳极氧化层2，具体步骤如下：The sulfuric acid anodic oxidation process is used to make the insulated metal plate, and the anodized layer 2 is directly prepared on the surface of the metal substrate 1. The specific steps are as follows:
(1)除油(1) Degreasing
将2A12-T4铝合金基板依次经400#、600#、800#砂纸研磨后，先用W2.5金刚石研磨膏抛光，然后用四氯化碳溶剂超声波清洗，以除去铝合金基板表面的油污，晾干。After the 2A12-T4 aluminum alloy substrate is ground with 400 # , 600 # , and 800 # sandpaper in sequence, it is first polished with W2.5 diamond grinding paste, and then ultrasonically cleaned with carbon tetrachloride solvent to remove the oil on the surface of the aluminum alloy substrate. to dry.
(2)碱蚀(2) Alkali corrosion
用碱蚀液进一步清洗铝合金基板表面的油污，并清除铝合金基板表面的自然氧化膜和划痕。Use alkaline etching solution to further clean the oil on the surface of the aluminum alloy substrate, and remove the natural oxide film and scratches on the surface of the aluminum alloy substrate.
每1L碱蚀液中含有50g氢氧化钠、45g亚硝酸钠、50g葡萄糖酸钠。铝合金基板在碱蚀液中浸洗的时间为5-10min。Each 1L of alkaline etching solution contains 50g of sodium hydroxide, 45g of sodium nitrite, and 50g of sodium gluconate. The time for the aluminum alloy substrate to be dipped in the alkaline etching solution is 5-10 minutes.
(3)水洗(3) Washing
铝合金基板用蒸馏水进行多重清洗，观察表面清洁程度，必要时可重复碱蚀步骤，直至铝合金基板的表面清洁。The aluminum alloy substrate is cleaned multiple times with distilled water, and the surface cleanliness is observed. If necessary, the alkali etching step can be repeated until the surface of the aluminum alloy substrate is clean.
(4)中和、出光(4) Neutralize and emit light
用5％的硝酸溶液浸洗基板10～30s，进行酸碱中和及出光。Rinse the substrate with 5% nitric acid solution for 10-30s to neutralize the acid and alkali and emit light.
(5)二次水洗(5) Second washing
用蒸馏水浸洗铝合金基板，直至残液都清洗掉。Rinse the aluminum alloy substrate with distilled water until the residual liquid is washed away.
(6)阳极氧化(6) Anodizing
采用180g/L的硫酸溶液作为阳极氧化液，阴极材料采用紫铜，温度控制在22±2℃，电压控制在16±1V，阳极电流密度控制在0.8A/dm2，阳极氧化时间控制在120-150min，具体视氧化进行的程度而定。180g/L sulfuric acid solution is used as the anode oxidation solution, the cathode material is copper, the temperature is controlled at 22±2°C, the voltage is controlled at 16±1V, the anode current density is controlled at 0.8A/dm 2 , and the anodic oxidation time is controlled at 120- 150min, depending on the degree of oxidation.
(7)封闭(7) closed
用5g/L醋酸镍溶液加热到98℃对铝合金基板进行封闭处理5-10min，最终得到乳白色的2A12-T4铝合金绝缘金属板。Heat the aluminum alloy substrate with 5g/L nickel acetate solution to 98°C for 5-10min to seal, and finally obtain a milky white 2A12-T4 aluminum alloy insulated metal plate.
将2A12-T4铝合金绝缘金属板置于离子镀膜机的真空室沉积铜薄膜30min，从而在2A12-T4铝合金绝缘金属板上得到铜布线层3，如图1所示。The 2A12-T4 aluminum alloy insulated metal plate was placed in the vacuum chamber of the ion coating machine to deposit a copper film for 30 minutes, so as to obtain the copper wiring layer 3 on the 2A12-T4 aluminum alloy insulated metal plate, as shown in FIG. 1 .
使用胜利VC9802A数字万用表测试2A12-T4铝合金绝缘金属板的绝缘效果，测试结果如下：Use Shengli VC9802A digital multimeter to test the insulation effect of 2A12-T4 aluminum alloy insulated metal plate. The test results are as follows:
(1)铜布线引脚A、B两点及C、D两点之间导通(电阻在几十欧姆到一百欧姆之间)，说明铜布线导电性良好；(1) The copper wiring pins A, B and C, D are conductive (the resistance is between tens of ohms and one hundred ohms), indicating that the copper wiring has good conductivity;
(2)未布线处任意两点，A、C两点，A、D两点，B、C两点，B、D两点，均不导通(MΩ级绝缘)，说明铜布线与基体不导通，即基板表面的绝缘效果非常理想。(2) Any two points where there is no wiring, two points A and C, two points A and D, two points B and C, and two points B and D are not conductive (MΩ level insulation), indicating that the copper wiring is not connected to the substrate. Conduction, that is, the insulation effect of the substrate surface is very ideal.
由此可见，本发明的绝缘金属板在保证铜布线具有良好导电性的前提下，绝缘效果非常理想。It can be seen that the insulating metal plate of the present invention has a very ideal insulating effect on the premise of ensuring that the copper wiring has good electrical conductivity.
需要说明的是，上述实施例不以任何形式限制本发明，凡采用等同替换或等效变换的方式所获得的技术方案，均落在本发明的保护范围内。It should be noted that the above embodiments do not limit the present invention in any form, and all technical solutions obtained by means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.
Claims (4)
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| CN201410654338.9A CN104451818A (en) | 2014-11-17 | 2014-11-17 | Insulating metal plate and preparation method thereof |
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| CN201410654338.9A CN104451818A (en) | 2014-11-17 | 2014-11-17 | Insulating metal plate and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161580A1 (en) * | 2016-03-25 | 2017-09-28 | 深圳市恒兆智科技有限公司 | Alkali etching agent for aluminum material and alkali etching preprocessing method for aluminum material |
| CN110983412A (en) * | 2019-03-26 | 2020-04-10 | 丹东思诚科技有限公司 | Application of hard aluminum oxide film prepared based on in-situ generation method in aluminum-shell lithium battery insulation sealing |
| CN113366141A (en) * | 2018-12-21 | 2021-09-07 | 旭硝子欧洲玻璃公司 | Method for metal coating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665970A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院宁波材料技术与工程研究所 | Normal-temperature sealer for anodic oxide film of aluminum and aluminum alloy and sealing method thereof |
| CN102666940A (en) * | 2009-12-25 | 2012-09-12 | 富士胶片株式会社 | Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element |
| CN102888644A (en) * | 2011-07-18 | 2013-01-23 | 汉达精密电子(昆山)有限公司 | Anode treatment method of aluminium alloy |
-
2014
- 2014-11-17 CN CN201410654338.9A patent/CN104451818A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665970A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院宁波材料技术与工程研究所 | Normal-temperature sealer for anodic oxide film of aluminum and aluminum alloy and sealing method thereof |
| CN102666940A (en) * | 2009-12-25 | 2012-09-12 | 富士胶片株式会社 | Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element |
| CN102888644A (en) * | 2011-07-18 | 2013-01-23 | 汉达精密电子(昆山)有限公司 | Anode treatment method of aluminium alloy |
Non-Patent Citations (3)
| Title |
|---|
| 余祖孝等: "铝阳极氧化膜不同封孔方法的耐腐蚀性能研究", 《轻合金加工技术》 * |
| 卫晏华: "铝型材阳极氧化生产工艺探讨", 《有色金属加工》 * |
| 李启征等: "复合封孔对铸铝阳极氧化膜耐蚀性的影响", 《材料保护》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161580A1 (en) * | 2016-03-25 | 2017-09-28 | 深圳市恒兆智科技有限公司 | Alkali etching agent for aluminum material and alkali etching preprocessing method for aluminum material |
| CN113366141A (en) * | 2018-12-21 | 2021-09-07 | 旭硝子欧洲玻璃公司 | Method for metal coating |
| CN110983412A (en) * | 2019-03-26 | 2020-04-10 | 丹东思诚科技有限公司 | Application of hard aluminum oxide film prepared based on in-situ generation method in aluminum-shell lithium battery insulation sealing |
| CN110983412B (en) * | 2019-03-26 | 2022-03-29 | 国研新能(深圳)技术有限公司 | Application of hard aluminum oxide film prepared based on in-situ generation method in aluminum-shell lithium battery insulation sealing |
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Application publication date: 20150325 |