CN104441815A - Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass - Google Patents
Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass Download PDFInfo
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- CN104441815A CN104441815A CN201410634938.9A CN201410634938A CN104441815A CN 104441815 A CN104441815 A CN 104441815A CN 201410634938 A CN201410634938 A CN 201410634938A CN 104441815 A CN104441815 A CN 104441815A
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- magnetron sputtering
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- 239000011521 glass Substances 0.000 title claims abstract description 49
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 11
- 238000002834 transmittance Methods 0.000 title abstract description 8
- 239000004332 silver Substances 0.000 title abstract description 7
- 238000002360 preparation method Methods 0.000 title description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 68
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 167
- 239000010949 copper Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000011701 zinc Substances 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- WVWBIKZXCXPPIR-UHFFFAOYSA-M N.[O-2].[OH-].O.[Cr+3] Chemical compound N.[O-2].[OH-].O.[Cr+3] WVWBIKZXCXPPIR-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003026 anti-oxygenic effect Effects 0.000 description 2
- -1 dc source sputters Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010930 yellow gold Substances 0.000 description 1
- 229910001097 yellow gold Inorganic materials 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a golden-class double-silver LOW-E glass with high light transmittance. The glass comprises a glass substrate, and is characterized in that thirteen film layers are sequentially compounded on the compound surface of the glass substrate in an adjacent way from inside to outside, wherein the first film layer is an SSTZrOX layer arranged at the innermost layer, the second film layer is an AZO layer, the third film layer is an Si layer, the fourth film layer is an AZO layer, the fifth film layer is a Cu layer, the sixth film layer is a CrN(x)O(y) layer, the seventh film layer is an SnO2 layer, the eighth film layer is an AZO layer, the ninth film layer is an Si layer, the tenth film layer is an AZO layer, the eleventh film layer is an Ag layer, the twelfth film layer is a CrN(x)O(y) layer, and the outermost layer is an Si3N4 layer. Aiming at overcoming the defects of the prior art, the golden-class double-silver LOW-E glass which is high in transmittance, bright in color, low in radiance, remarkable in energy-saving effect and low in production cost and has high light transmittance is provided. The invention also provides a method for preparing the golden-class double-silver LOW-E glass with high light transmittance by a magnetron sputtering method.
Description
[technical field]
The present invention relates to a kind of two silver-colored LOW-E glass of golden class of high transmission rate, the invention still further relates to a kind of method that magnetron sputtering method prepares the two silver-colored LOW-E glass of golden class of high transmission rate.
[background technology]
Coated glass has the double effects of energy-saving and emission-reduction and decorative curtain wall.And aurene is as a unconventional kind of coated glass, be loved by the people.But due to golden coated glass product existing on market, tone is dim and production cost is high, and great majority are sunlight controlling coated glass.
[summary of the invention]
The present invention seeks to overcome the deficiencies in the prior art, there is provided a kind of transmitance high, bright in colour, radiance is low, energy-saving effect is remarkable, the two silver-colored LOW-E glass of golden class of the high transmission rate that production cost is low, the method for the two silver-colored LOW-E glass of the golden class that the present invention also provides a kind of magnetron sputtering method to prepare high transmission rate.
The present invention is achieved by the following technical solutions:
The two silver-colored LOW-E glass of golden class of high transmission rate, includes glass substrate 1, it is characterized in that: be adjacent to successively from inside to outside be compounded with 13 retes on the composite surface of glass substrate, wherein the first rete and innermost layer are SSTZrO
xlayer 21, the second layer is AZO layer 22, and third layer is the 23, four layer, Si layer is AZO layer 24, and layer 5 is Cu layer 25, and layer 6 is CrN
xo
ylayer 26, layer 7 is SnO
2the 27, eight layer, layer be the 28, nine layer, AZO layer is the 29, ten layer, Si layer be AZO layer 210, the eleventh floor is Ag layer 211, and Floor 12 is CrN
xo
ylayer 212, outermost layer is Si
3n
4layer 213.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that described first rete SSTZrO
xthe thickness of layer 21 is 30 ~ 40nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, the thickness that it is characterized in that described second layer AZO layer 22 is 10 ~ 15nm, thickness 10 ~ the 20nm of the 4th layer of AZO layer 24, the thickness of the 8th layer of AZO layer 28 is 8 ~ 12nm, and the tenth layer is the thickness of AZO210 is 10 ~ 20nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that the thickness of described third layer Si layer 23 is 3 ~ 5nm, the 9th layer of Si layer 295 ~ 8nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that the thickness of described layer 5 Cu layer 25 is 10 ~ 15nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that described layer 6 CrN
xo
ylayer 26 and Floor 12 CrN
xo
ythe thickness of layer 212 is 3nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that described layer 7 SnO
2the thickness of layer 27 is 60nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that the thickness of described eleventh floor Ag layer 211 is 10 ~ 15nm.
The two silver-colored LOW-E glass of golden class of high transmission rate as above, is characterized in that described outermost layer Si
3n
4the thickness of layer 213 is 50nm.
Prepare a method for the two silver-colored LOW-E glass of golden class of above-mentioned high transmission rate, it is characterized in that comprising the steps:
(1) magnetron sputtering SSTZrO
xlayer, makes with interchange intermediate frequency power supply, oxygen the stainless steel target Fe:Zr=80:20 that zirconium is mixed in reacting gas sputtering, and argon oxygen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM;
(2) magnetron sputtering oxygen AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is: 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Cu layer makes place mat;
(3) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(4) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Cu layer makes place mat;
(5) magnetron sputtering C u layer, dc source sputters, with argon gas as process gas, body flow 500 ~ 550SCCM;
(6) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(7) magnetron sputtering SnO
2layer, makes reacting gas sputtering for Sn target with interchange intermediate frequency power supply, oxygen, and argon oxygen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM;
(8) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Ag layer makes place mat;
(9) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(10) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM ~ 420SCCM:20 ~ 40SCCM, for Ag layer makes place mat;
(11) magnetron sputtering Ag layer, dc source sputters, gas flow 500 ~ 550SCCM.
(12) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(13) magnetron sputtering Si
3n
4layer, makes reacting gas sputtering sial target with interchange intermediate frequency power supply, nitrogen, sial mass percent 92:8, and argon nitrogen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM.
Compared with prior art, the present invention has the following advantages:
1, the two silver-colored LOW-E glass of the golden class of special film system of the present invention, bright in colour, and light transmittance is high, reaches more than 70%; .
2, compared with the gold that the present invention and employing gold is produced as functional layer, Si is as the cost of functional layer less than the one thousandth with gold, and the radiance of product only 0.02, energy-saving effect is remarkable.
3, the present invention adopts copper to substitute one deck silver, and the two silver-colored LOW-E glass cost than common while ensure that gold effect is lower.
[accompanying drawing explanation]
Fig. 1 is structural representation of the present invention.
[detailed description of the invention]
The two silver-colored LOW-E glass of golden class of high transmission rate, include glass substrate 1, the composite surface of glass substrate is adjacent to from inside to outside be successively compounded with 13 retes, wherein the first rete and innermost layer are SSTZrO
xlayer 21, the second layer is AZO layer 22, and third layer is the 23, four layer, Si layer is AZO layer 24, and layer 5 is Cu layer 25, and layer 6 is CrN
xo
ylayer 26, layer 7 is SnO
2the 27, eight layer, layer be the 28, nine layer, AZO layer is the 29, ten layer, Si layer be AZO layer 210, the eleventh floor is Ag layer 211, and Floor 12 is CrN
xo
ylayer 212, outermost layer is Si
3n
4layer 213.
Described first rete and innermost layer are SSTZrO
xlayer 21, namely mixes zirconium oxidation stainless steel layer, by mixing zirconium in stainless steel, improving the refractive index of rete, reach about 2.0 when reactive sputtering, thus promote the transmitance of compound film system.Make adjustments golden color layers, more yellow gold effect can be obtained.SSTZrO
xthe thickness of layer 21 is 30 ~ 40nm, and preferred 35nm, nm are nanometers, 1m=10
9nm.
Described second layer AZO layer 22, i.e. the zinc oxide film of aluminium doping, levelling blanket, level and smooth Si layer, for Si, Cu layer makes place mat, reduces radiance.The thickness of AZO layer is 10 ~ 15nm.Preferred 12nm.
Described third layer Si layer 23, i.e. silicon layer is functional layer, is used as golden providing layer.The thickness of Si layer is 3 ~ 5nm, preferred 4nm.
Described 4th layer of AZO layer 24, i.e. the zinc oxide film of aluminium doping, levelling blanket, owing to becoming tufted structure after Si sputtering, by with the level and smooth Si layer of AZO layer, for lower floor plating Cu plays bottoming effect.For Cu layer makes place mat, reduce radiance.The thickness of AZO layer is 10 ~ 20nm.Preferred 15nm.
Described layer 5 Cu layer 25, i.e. metal copper layer, is functional layer, reduces costs, bright in colour.The thickness of Cu layer is 10 ~ 15nm, preferred 12nm.
Described layer 6 CrN
xo
ylayer 26, i.e. nitrogen chromium oxide layer, high temperature oxidation resistance when raising rete wearability, raising light transmittance, raising tempering.CrN
xo
ythe thickness of layer 26 is 3nm.
Described layer 7 SnO
2layer 27, i.e. zinc oxide film is middle dielectric layer, protective layer.SnO
2the thickness of layer 27 is 60nm.
Described 8th layer is AZO layer 28, i.e. the zinc oxide film of aluminium doping, levelling blanket, and level and smooth Si layer, for Si, Ag layer makes place mat, reduces radiance.The thickness of AZO layer 28 is 10nm.
Described 9th layer is Si layer 29, i.e. silicon layer, is functional layer, is used as golden providing layer.The thickness of Si layer 29 is 5 ~ 8nm,
Described ten layer is AZO210, i.e. the zinc oxide film of aluminium doping, levelling blanket, owing to becoming tufted structure after Si sputtering, by with the level and smooth Si layer of AZO layer, for lower floor plating Ag plays bottoming effect, for Ag layer makes place mat, reduces radiance.The thickness of AZO layer 210 is 10 ~ 20nm, preferred 15nm.
Described eleventh floor is Ag layer 211, i.e. metallic silver layer, and be functional layer, metallic silver layer provides lower radiance, plays environmental protection and energy saving.
Floor 12 is CrN
xo
ylayer 212, i.e. nitrogen chromium oxide layer, high temperature oxidation resistance when raising rete wearability, raising light transmittance, raising tempering.CrN
xo
ythe thickness of layer 212 is 3nm.
Described outermost layer Si
3n
4layer 213, i.e. silicon nitride layer; Top layer dielectric layer, Si
3n
4be a kind of adamantine material, improve physical property and the antioxygenic property of rete, it ensure whole coating and there is good mechanical endurance, be arranged on the first barrier of outermost layer as the whole rete of protection.Make reacting gas sputtering semi-conducting material Si:Al=92:8 with interchange intermediate frequency power supply, nitrogen, density 96%, improves physical property and the antioxygenic property of rete.Si
3n
4the thickness of layer is 50nm.
Low-E glass is also called low radiation coated glass.
Prepare a method for the two silver-colored LOW-E glass of golden class of described high transmission rate, comprise the steps:
(1) magnetron sputtering SSTZrO
xlayer, make with interchange intermediate frequency power supply, oxygen the stainless steel target Fe:Zr=80:20 that zirconium is mixed in reacting gas sputtering, argon oxygen ratio is
400SCCM ~ 420SCCM:450SCCM ~ 500SCCM, in this step, argon oxygen is than the quality determining film forming;
(2) magnetron sputtering oxygen AZO layer, sputters ceramic Zn target with midfrequent AC power supply, i.e. AZO target, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is: 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Cu layer makes place mat;
(3) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(4) magnetron sputtering AZO layer, sputters ceramic ZnAZO target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Cu layer makes place mat;
(5) magnetron sputtering C u layer, dc source sputters, with argon gas as process gas, body flow 500 ~ 550SCCM;
(6) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(7) magnetron sputtering SnO
2layer, makes reacting gas sputtering for Sn target with interchange intermediate frequency power supply, oxygen, and argon oxygen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM, and in this step, argon oxygen is than the quality determining film forming;
(8) magnetron sputtering AZO layer, sputters ceramic Zn with midfrequent AC power supply, i.e. AZO target, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Ag layer makes place mat;
(9) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(10) magnetron sputtering AZO layer, sputters ceramic Zn with midfrequent AC power supply, i.e. AZO target, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM ~ 420SCCM:20 ~ 40SCCM, for Ag layer makes place mat;
(11) magnetron sputtering Ag layer, dc source sputters, gas flow 500 ~ 550SCCM.
(12) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(13) magnetron sputtering Si
3n
4layer, make reacting gas sputtering sial target with interchange intermediate frequency power supply, nitrogen, sial mass percent 92:8, argon nitrogen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM, and in this step, argon nitrogen is than the quality determining film forming.Magnetron sputtering Si
3n
4layer, makes reacting gas sputtering semi-conducting material weight ratio Si:Al=92:8 with interchange intermediate frequency power supply, nitrogen; That obtain is Si herein
3n
4, and metal A l is for increasing the electric conductivity of raw material in magnetron sputtering process, metal A l does not participate in reaction, and due to the electric conductivity extreme difference of non-metal semiconductive Si, mixing increase electric conductivity if do not adopted metal A l cannot carry out magnetron sputtering Si smoothly
3n
4layer.
Claims (10)
1. the two silver-colored LOW-E glass of the golden class of high transmission rate, includes glass substrate (1), it is characterized in that: be adjacent to successively from inside to outside be compounded with 13 retes on the composite surface of glass substrate, wherein the first rete and innermost layer are SSTZrO
xlayer (21), the second layer is AZO layer (22), and third layer is Si layer (23), and the 4th layer is AZO layer (24), and layer 5 is Cu layer (25), and layer 6 is CrN
xo
ylayer (26), layer 7 is SnO
2layer (27), the 8th layer is AZO layer (28), and the 9th layer is Si layer (29), and the tenth layer is AZO layer (210), and eleventh floor is Ag layer (211), and Floor 12 is CrN
xo
ylayer (212), outermost layer is Si
3n
4layer (213).
2. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that described first rete SSTZrO
xthe thickness of layer (21) is 30 ~ 40nm.
3. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, the thickness that it is characterized in that described second layer AZO layer (22) is 10 ~ 15nm, thickness 10 ~ the 20nm of the 4th layer of AZO layer (24), the thickness of the 8th layer of AZO layer (28) is 8 ~ 12nm, and the tenth layer is the thickness of AZO (210) is 10 ~ 20nm.
4. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that the thickness of described third layer Si layer (23) is 3 ~ 5nm, the 9th layer of Si layer (29) 5 ~ 8nm.
5. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that the thickness of described layer 5 Cu layer (25) is 10 ~ 15nm.
6. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that described layer 6 CrN
xo
ylayer (26) and Floor 12 CrN
xo
ythe thickness of layer (212) is 3nm.
7. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that described layer 7 SnO
2the thickness of layer (27) is 60nm.
8. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that the thickness of described eleventh floor Ag layer (211) is 10 ~ 15nm.
9. the two silver-colored LOW-E glass of the golden class of high transmission rate according to claim 1, is characterized in that described outermost layer Si
3n
4the thickness of layer (213) is 50nm.
10. prepare a method for the two silver-colored LOW-E glass of golden class of high transmission rate according to claim 1, it is characterized in that comprising the steps:
(1) magnetron sputtering SSTZrO
xlayer, makes with interchange intermediate frequency power supply, oxygen the stainless steel target Fe:Zr=80:20 that zirconium is mixed in reacting gas sputtering, and argon oxygen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM;
(2) magnetron sputtering oxygen AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is: 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Cu layer makes place mat;
(3) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(4) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Cu layer makes place mat;
(5) magnetron sputtering C u layer, dc source sputters, with argon gas as process gas, body flow 500 ~ 550SCCM;
(6) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(7) magnetron sputtering SnO
2layer, makes reacting gas sputtering for Sn target with interchange intermediate frequency power supply, oxygen, and argon oxygen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM;
(8) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM-420SCCM:20 ~ 40SCCM, for Si, Ag layer makes place mat;
(9) magnetron sputtering Si layer, AC power sputters, with Ar gas as sputter gas, gas flow 500 ~ 550SCCM;
(10) magnetron sputtering AZO layer, sputters ceramic Zn target with midfrequent AC power supply, with argon gas as sputter gas, mixes a small amount of O
2, argon oxygen ratio is 400SCCM ~ 420SCCM:20 ~ 40SCCM, for Ag layer makes place mat;
(11) magnetron sputtering Ag layer, dc source sputters, gas flow 500 ~ 550SCCM.
(12) magnetron sputtering C rN
xo
ylayer, with dc source sputtering, does reacting gas with nitrogen, oozes a small amount of oxygen;
(13) magnetron sputtering Si
3n
4layer, makes reacting gas sputtering sial target with interchange intermediate frequency power supply, nitrogen, sial mass percent 92:8, and argon nitrogen is than being 400SCCM ~ 420SCCM:450SCCM ~ 500SCCM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410634938.9A CN104441815B (en) | 2014-11-12 | 2014-11-12 | A kind of two silver-colored LOW-E glass of golden class of high transmission rate and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410634938.9A CN104441815B (en) | 2014-11-12 | 2014-11-12 | A kind of two silver-colored LOW-E glass of golden class of high transmission rate and preparation method |
Publications (2)
| Publication Number | Publication Date |
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| CN104441815A true CN104441815A (en) | 2015-03-25 |
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Cited By (4)
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| CN105271823A (en) * | 2015-10-24 | 2016-01-27 | 揭阳市宏光镀膜玻璃有限公司 | Temperable high-abrasion-resistance golden double-silver LOW-E glass and preparation method thereof |
| CN109265718A (en) * | 2018-07-17 | 2019-01-25 | 海安浩驰科技有限公司 | A kind of AgO/Si automobile adhesive film material with spectral selection absorption function |
| CN110104967A (en) * | 2019-03-27 | 2019-08-09 | 揭阳市宏光镀膜玻璃有限公司 | A kind of phosphorus doping self-cleaning double-silver LOW-E glass and preparation method thereof |
| CN110627374A (en) * | 2019-09-27 | 2019-12-31 | 吴江南玻华东工程玻璃有限公司 | Amber medium-transmittance low-reflection double-silver energy-saving coated glass and preparation method thereof |
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| CN110627374A (en) * | 2019-09-27 | 2019-12-31 | 吴江南玻华东工程玻璃有限公司 | Amber medium-transmittance low-reflection double-silver energy-saving coated glass and preparation method thereof |
| CN110627374B (en) * | 2019-09-27 | 2024-01-12 | 吴江南玻华东工程玻璃有限公司 | Amber middle-permeation low-reflection double-silver energy-saving coated glass and preparation method thereof |
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Denomination of invention: Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass Effective date of registration: 20161117 Granted publication date: 20160413 Pledgee: China Co. truction Bank Corp Jieyang branch Pledgor: JIEYANG HONGGUANG COATED GLASS Co.,Ltd. Registration number: 2016990000996 |
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Denomination of invention: Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass Effective date of registration: 20200717 Granted publication date: 20160413 Pledgee: Bank of China Limited Jieyang branch Pledgor: JIEYANG HONGGUANG COATED GLASS Co.,Ltd. Registration number: Y2020440000199 |
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Date of cancellation: 20231026 Granted publication date: 20160413 Pledgee: Bank of China Limited Jieyang branch Pledgor: JIEYANG HONGGUANG COATED GLASS Co.,Ltd. Registration number: Y2020440000199 |
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Denomination of invention: A high transmittance gold like double silver LOW-E glass and its preparation method Effective date of registration: 20231030 Granted publication date: 20160413 Pledgee: Bank of China Limited Jieyang branch Pledgor: JIEYANG HONGGUANG COATED GLASS Co.,Ltd. Registration number: Y2023980063173 |