CN104425343B - The forming method of fleet plough groove isolation structure - Google Patents
The forming method of fleet plough groove isolation structure Download PDFInfo
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- CN104425343B CN104425343B CN201310382846.1A CN201310382846A CN104425343B CN 104425343 B CN104425343 B CN 104425343B CN 201310382846 A CN201310382846 A CN 201310382846A CN 104425343 B CN104425343 B CN 104425343B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
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Abstract
A kind of forming method of fleet plough groove isolation structure, comprising: semiconductor substrate is provided, is formed with groove in the semiconductor substrate；The precursor material layer with mobility is formed in the semiconductor substrate surface, the precursor material layer fills the full groove；Microwave treatment or row H are carried out to the precursor material layer2O corona treatment makes the precursor material layer be transformed into dielectric layer.The efficiency that precursor material layer is transformed into dielectric layer can be improved in the forming method of the fleet plough groove isolation structure, improves the isolation effect of dielectric layer.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of forming method of fleet plough groove isolation structure.
Background technique
Sub-micron and smaller characteristic size are the ultra-large collection of next-generation super large-scale integration and semiconductor devices
At one of key technology.Constantly more stringent requirements are proposed for formation process of the minification to semiconductor, forms high quality
Gate pattern and the region shallow trench isolation (STI) are the key that integrated circuit development.In order to realize higher current densities, not only
The characteristic size of semiconductor devices is reduced, and the size of the isolation structure between device corresponding can also reduce.
It include shallow trench isolation (STI) technique in current isolation technology.STI process includes: to etch in the substrate first
The groove with one fixed width and depth is formed, one layer of dielectric material is then filled in the groove, then planarization is given an account of
Material, for example, by using chemically mechanical polishing (CMP) technique.With further decreasing for groove width, groove depth-to-width ratio is continuous
Increase, be easy to form cavity wherein when filled media material in the groove of high-aspect-ratio, reduces fleet plough groove isolation structure
Isolation effect.
Mobility chemical vapor deposition process (FCVD) fills tool using mobility chemical vapor deposition process in the trench
There is the precursor material of mobility, the precursor material curing process is then formed into dielectric material.Using mobility chemical gaseous phase
Depositing operation can improve the isolation effect of STI to avoid occurring cavity when filled media material in the groove of high-aspect-ratio.
But the technique that the prior art forms fleet plough groove isolation structure using mobility chemical vapor deposition process (FCVD)
Lower to the cured efficiency of precursor material progress in step, the isolation performance of the fleet plough groove isolation structure dielectric layer is also
It needs to be further improved.
Summary of the invention
Problems solved by the invention is to improve a kind of forming method of fleet plough groove isolation structure, further increase shallow trench every
Isolation effect from structure.
To solve the above problems, the present invention provides a kind of forming method of fleet plough groove isolation structure, comprising: provide semiconductor
Substrate is formed with groove in the semiconductor substrate；The precursor material with mobility is formed in the semiconductor substrate surface
Layer, the precursor material layer fill the full groove；Microwave treatment is carried out to the precursor material layer, makes the precursor material layer
It is transformed into dielectric layer.
Optionally, Si -- H bond, Si-N key or Si-N-H key are contained in the material of the precursor material layer, the dielectric layer
Material is SiO2。
Optionally, the microwave treatment is in H2O steam, O3、H2O liquid or O3Aqueous solution atmosphere under carry out.
Optionally, it is 50W~1000W that the time of the microwave treatment, which is the microwave power of the microwave treatment, at microwave
The temperature of reason is 50 DEG C~500 DEG C, and the time of microwave treatment is 60s~2h.
Optionally, the method for forming the precursor material layer is mobility chemical vapor deposition process.
Optionally, the pre-reaction material that the mobility chemical vapor deposition process uses include at least silane, disilane,
Methyl-monosilane, dimethylsilane, trimethyl silane, tetramethylsilane, ethyl orthosilicate, triethoxysilane, prestox ring four
One of siloxanes, tetramethyl disiloxane, tetramethyl-ring tetrasiloxane, trimethylsilyl amine, dimethyl silanyl amine.
Optionally, the mobility chemical vapor deposition process is in H2And N2Mixed gas, N2、NH3、NH4OH、N2H4、NO、
N2O、NO2、O3、O2、H2O2One or more of carry out under atmosphere.
Optionally, further includes: it is described that microwave treatment is carried out to precursor material layer, so that the precursor material layer is transformed into medium
After layer, the dielectric layer is made annealing treatment.
Optionally, the annealing includes the first annealing under nitrogen or atmosphere of inert gases, and described first moves back
The temperature of fire processing is 700 DEG C~1000 DEG C.
Optionally, the H before the annealing further includes the first annealing2At the second annealing under O steam atmosphere
The temperature of reason, second annealing is 300 DEG C~500 DEG C.
Technical solution of the present invention also provides a kind of forming method of fleet plough groove isolation structure, comprising: provides semiconductor lining
Bottom is formed with groove in the semiconductor substrate；Being formed in the semiconductor substrate surface, there is the siliceous forerunner of mobility to be situated between
Matter layer, the precursor material layer fill the full groove；H is carried out to the precursor material layer2O corona treatment makes described
Precursor material layer is transformed into dielectric layer.
Optionally, Si -- H bond, Si-N key or Si-N-H key are contained in the material of the precursor material layer, the dielectric layer
Material is SiO2。
Optionally, the H2The temperature of O corona treatment is 25 DEG C~500 DEG C, the H2The flow of O be 50sccm~
20slm, radio-frequency power 100W~1000W.
Optionally, the method for forming the precursor material layer is mobility chemical vapor deposition process.
Optionally, the pre-reaction material that the mobility chemical vapor deposition process uses include at least silane, disilane,
Methyl-monosilane, dimethylsilane, trimethyl silane, tetramethylsilane, ethyl orthosilicate, triethoxysilane, prestox ring four
One of siloxanes, tetramethyl disiloxane, tetramethyl-ring tetrasiloxane, trimethylsilyl amine, dimethyl silanyl amine.
Optionally, the mobility chemical vapor deposition process is in H2And N2Mixed gas, N2、NH3、NH4OH、N2H4、NO、
N2O、NO2、O3、O2、H2It is carried out under one or more of O atmosphere.
Optionally, further includes: described that H is carried out to precursor material layer2O corona treatment turns the precursor material layer
After becoming dielectric layer, the dielectric layer is made annealing treatment.
Optionally, the annealing includes the third annealing under nitrogen or atmosphere of inert gases, and the third is moved back
The temperature of fire processing is 700 DEG C~1000 DEG C.
Optionally, the H before the annealing further includes the first annealing2At the 4th annealing under O steam atmosphere
The temperature of reason, the 4th annealing is 300 DEG C~500 DEG C.
Compared with prior art, technical solution of the present invention has the advantage that
In technical solution of the present invention, filling formation in the trench using mobility chemical vapor deposition (FCVD) has stream
The precursor material layer of dynamic property, is then handled using microwave treatment, the precursor material layer is made to be converted into dielectric layer.At microwave
Reason enhances precursor material and the reactivity of solid gas, is changed into dielectric layer so as to improve the precursor material layer
Curing efficiency improve the isolation performance of the dielectric layer to reduce the impurity content in the dielectric layer of formation.
In technical solution of the present invention, filling formation in the trench using mobility chemical vapor deposition (FCVD) has stream
After the precursor material layer of dynamic property, H can also be carried out to the precursor material layer2O corona treatment.By H2O steam plasma
Change, further enhance reactivity of the O in conjunction with Si, is cured conversion to further improve the precursor material layer
As the efficiency of dielectric layer, so as to also remaining a large amount of Si-H, Si-N or Si-N-H in the dielectric layer that avoids the formation of and
Influence the isolation performance of finally formed fleet plough groove isolation structure.
Further, after carrying out processing to the precursor material layer and it is made to be changed into dielectric layer, to the dielectric layer
The defects of it is made annealing treatment, further remove the impurity in the dielectric layer, and reduce the dielectric layer, thus into one
Step improves the isolation performance of the dielectric layer.
Detailed description of the invention
Fig. 1 to Fig. 7 is the structural schematic diagram of the forming process of the fleet plough groove isolation structure of the embodiment of the present invention.
Specific embodiment
As described in the background art, the efficiency that the prior art carries out curing process to mobility precursor material is lower, described
The performance of finally formed dielectric layer need further to improve in fleet plough groove isolation structure.
The study found that in the prior art, generally being solidified using the processing such as annealing under oxygen atmosphere to forerunner's material layer
Processing, but in annealing process, oxygen reacted with precursor material to be formed dielectric layer reaction rate it is slower, it usually needs progress is more
Annealing under secondary and multiple temperature atmosphere, just can make oxygen sufficiently react to form dielectric layer with precursor material, and process is complex,
Special processing chamber housing and enough processing time are needed, could be completed.Also, due to the efficiency of the curing process compared with
It is low, it is easy to just as solidify supplement point and cause the insulation performance of the dielectric layer formed after solidifying poor, and influence STI every
From effect.
In the embodiment of the present invention, using microwave treatment or H2The mode of O corona treatment is to the precursor material
It is handled, improves curing efficiency, to improve the isolation effect of the STI of formation.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Referring to FIG. 1, providing semiconductor substrate 100.
Specifically, the material of the semiconductor substrate 100 includes the semiconductor materials such as silicon, germanium, SiGe, GaAs, institute
It states semiconductor substrate 100 and can be body material and be also possible to composite construction such as silicon-on-insulator etc..Those skilled in the art can
To select the type of the semiconductor substrate 100 according to the semiconductor devices formed in semiconductor substrate 100, therefore described partly lead
The type of body substrate should not limit the scope of the invention.Using body silicon as semiconductor substrate in the present embodiment.
Referring to FIG. 2, forming mask layer 110 on 100 surface of semiconductor substrate, has in the mask layer 110 and open
Mouth 112, the opening 112 expose the surface of part semiconductor substrate 100.
In the present embodiment, the mask layer 110 includes 101 He of silicon oxide layer positioned at 100 surface of semiconductor substrate
Silicon nitride layer 102 positioned at 101 surface of silicon oxide layer.The mask layer 110 may be used also in other embodiments of the invention
To use other suitable mask materials.
The material of the silicon oxide layer 101 is silica, and the silicon oxide layer 101 is used as and is subsequently formed silicon nitride layer 102
Buffer layer, specifically, if the silicon nitride layer 102 is formed directly into the semiconductor substrate 100, due to silicon nitride
The stress of layer 102 is larger, can form dislocation on 100 surface of semiconductor substrate, and silicon oxide layer 101 is formed in semiconductor substrate
Between 100 and silicon nitride layer 102, lacking for dislocation can be generated by avoiding the direct silicon nitride layer 102 that formed on a semiconductor substrate 100
Point, and silicon oxide layer 101 is also used as the etching stop layer in 102 step of subsequent etching silicon nitride layer.The silica
Layer 101 can be formed using wet oxidation or dry oxidation technique.The silicon oxide layer 101 with a thickness of。
Stop-layer of the silicon nitride layer 102 as subsequent chemical mechanical grinding technics, the formation of the silicon nitride layer 102
Technique can be chemical vapor deposition process.The silicon nitride layer 102 with a thickness of 100。
There is opening 112, the forming method of the opening 112 includes: in the silicon nitride layer in the mask layer 110
102 surfaces are formed and 112 corresponding photoetching offset plate figure (not shown) of opening；Using the photoetching offset plate figure as exposure mask, using dry method
Etching technics is sequentially etched silicon nitride layer 102 and cushion oxide layer 101, until forming opening 201；After forming the opening 201
Photoetching offset plate figure is removed using cineration technics or chemical reagent removal technique.In the present embodiment, the dry etch process
For plasma etch process.The width of the opening 112 is 5nm~10um, and the position of the opening 112 defines subsequent shape
At fleet plough groove isolation structure position.
Referring to FIG. 3, forming groove 201 along 112 etch semiconductor substrates 100 of the opening.
It is exposure mask with the patterned mask layer 110 using dry etch process, described in etching along the opening 112
Semiconductor substrate 100.
In the present embodiment, using plasma etching technics etches the semiconductor substrate 100.It is subsequent in the groove
Isolated material is filled in 201, forms fleet plough groove isolation structure.
In the present embodiment, the side wall of the groove 201 of formation perpendicular to semiconductor substrate 100 surface, in the present invention
Other embodiments in, the side wall of the groove 201 can also be the side wall of inclination or Σ type.
Referring to FIG. 4, forming laying 202 in 201 inner wall surface of groove.
The material of the laying 202 be silica, silicon nitride or silicon oxynitride, the laying 202 with a thickness of。
The material of the laying 202 can be silica, form the laying 202 using thermal oxidation technology, described
Thermal oxidation technology can be wet oxidation and be also possible to dry oxidation technique.In the present embodiment, the material of the laying 202 is
Silica forms the laying 202 using dry oxidation technique.Specifically, the oxidizing gas of the dry oxidation is O2, stream
Amount is 10sccm~5000sccm, and reaction temperature is 900 DEG C~1200 DEG C.Dry oxidation technique, oxidation are used in the present embodiment
The growth rate of silicon is slower, can preferably control the thickness of the cushion oxide layer 202, and use dry oxidation technique,
The consistency of the cushion oxide layer 202 of formation is higher.
It in other embodiments of the invention, can also be using the mixed gas conduct of water vapour or water vapour and oxygen
Oxidizing gas forms the cushion oxide layer using thermal oxidation technology.
If directly in the groove 201 filled media material formed fleet plough groove isolation structure, the isolated material with
The side wall adhesiveness of groove 301 is poor, is easy to appear cavity, and the cushion oxide layer 202 and the adhesiveness of isolated material are higher,
It can be empty to avoid generating.Also, the cushion oxide layer 202 can also avoid the material of isolated material Yu 201 side wall of groove
Lattice mismatches and causes larger stress, while can repair during etching forms groove 201, to 201 inner wall of groove
It is damaged caused by surface, improves the isolation effect for the fleet plough groove isolation structure being subsequently formed.
The material of the laying 202 can also be silicon nitride or silicon oxynitride, and the silicon nitride or silicon oxynitride can be with
It is formed using chemical vapor deposition or plasma gas phase deposition technique.
The laying 202 can also protect the inner wall of the groove 201, prevent subsequent to the forerunner's material filled in groove
The bed of material in the process of processing, the problems such as peroxidating is caused to semiconductor substrate.
Referring to FIG. 5, forming the precursor material layer 300 with mobility, the forerunner in the semiconductor substrate 100
Material layer 300 fills the full groove 201(and please refers to Fig. 4).
Specifically, the present embodiment uses mobility chemical deposition process, the precursor material layer 300 is formed.The flowing
Property chemical vapor deposition process use pre-reaction material include at least silane, disilane, methyl-monosilane, dimethylsilane, three
Methyl-monosilane, tetramethylsilane, ethyl orthosilicate, triethoxysilane, octamethylcy-clotetrasiloxane, tetramethyl disiloxane,
In tetramethyl-ring tetrasiloxane, one kind of trimethylsilyl amine (TSA), dimethyl silanyl amine (DSA).Other silicon can also be used
The pre-reaction materials such as alkanamine and its derivative.The pre-reaction material used in the present embodiment is trimethylsilyl amine (TSA).
The mobility chemical vapor deposition process is in H2And N2Mixed gas, N2、NH3、NH4OH、N2H4、NO、N2O、NO2、
O3、O2、H2O2One or more of carry out under atmosphere.The atmosphere can also include hydrogeneous compound, oxygen-containing
Compound or hydrogeneous compound and oxygen containing compound combination, such as H2、H2And N2Mixed gas, O3、O2、H2O2、
H2One of O or multiple gases.The technique predecessor can be in plasma.The technique forerunner used in the present embodiment
Object is NH3。
In the present embodiment, the temperature of the semiconductor substrate 100 is in mobility chemical vapor deposition (FCVD) process of progress
In be maintained within the scope of predetermined temperature.In the present embodiment, semiconductor substrate temperature is kept to be lower than 200 DEG C, so that described
The precursor material of use is flowable to be packed into groove.Lower semiconductor substrate temperature can maintain precursor material partly leading
Mobility and viscosity in body substrate and in groove.There is flowability due to the precursor material layer of the formation and centainly glue
Degree, the chemical bond of the material can be converted to different chemical bond or function by subsequent microwave treatment or corona treatment
It can group.In the present embodiment, the semiconductor substrate temperature can be 30 DEG C or 80 DEG C less than 100 DEG C.
The pre-reaction material is entered in reaction chamber with the flow velocity of 1sccm~5000sccm, and gas with 1sccm~
The flow velocity of 1000sccm enters in reaction chamber, and reaction pressure is 0.1T~10T.It can also be passed through in the reaction chamber simultaneously
The inert gases such as Ar, He, Xe, inert gas flow velocity are 1sccm~50000sccm.
In an embodiment of the present invention, Si, N and H are contained in the pre-reaction material, so the precursor material layer formed
Containing chemical bonds such as Si-H, Si-N or Si-N-H in 300, these chemical bonds, can be by Si-O-Si institute in subsequent treatment process
Replace, forms silica.
The precursor material layer 300 fills the full groove 201(and please refers to Fig. 4) and cover the mask layer 110.
Referring to FIG. 6, please referring to Fig. 5 to the precursor material layer 300() it handles, make the precursor material layer 300
(please referring to Fig. 5) is transformed into dielectric layer 301.
In the present embodiment, Fig. 5 is please referred to the precursor material layer 300() microwave treatment is carried out, make the precursor material
Layer 300(please refers to Fig. 5) it is transformed into dielectric layer 301.
Specifically, the microwave treatment carries out in oxygen atmosphere, in the present embodiment, the microwave treatment is in H2O steam, O3
Gas, O3Aqueous solution or H2It is carried out under O liquid atmosphere.The microwave power of the microwave treatment is 50W~1000W, microwave treatment
Temperature be 50 DEG C~500 DEG C, time of microwave treatment is 60s~2h.
The semiconductor substrate of the precursor material layer 300 will be formed with as in microwave treatment chamber, then to the microwave
It is passed through one or both of H2O steam or O3 gas in chamber, makes the gas full of chamber, then in the atmosphere
It is interior that microwave treatment is carried out to precursor material layer 300, and the indoor temperature of the microwave cavity is made to be maintained at 50 DEG C~500 DEG C.
Microwave treatment can make the H in the material and above-mentioned microwave atmosphere of the precursor material layer 3002O steam, O3Gas, H2O
Liquid or O3Chemical bond energy improves in aqueous solution, increased activity, so that Si -- H bond, Si-N in the precursor material layer 300
Key, Si-N-H key are more easily broken off, while H-O key, the O -- O bond in microwave atmosphere are also easier to be broken, and the energy of oxygen atom is more
Height is that the precursor material layer 300 is formed by curing dielectric layer so as to promote to form Si-O key in conjunction with the oxygen atom of surrounding
301, the material of the dielectric layer 301 is silica.
Compared with the prior art is annealed by oxygen atmosphere, in the present embodiment, by microwave treatment, the oxygen atom can be made
Energy it is higher, activity is stronger, and the energy of the precursor material in the precursor material layer is also higher, Si -- H bond therein,
Si-N key, Si-N-H key be more easily broken off so that Si be easier Si-O is formed in conjunction with O, so as to improve curing efficiency, from
And make the precursor material be easier to be changed into silica, and the transformation is more thorough, in the dielectric layer 301 avoided the formation of also
There is the isolation performance for remaining a large amount of Si-H, Si-N or Si-N-H and influencing finally formed fleet plough groove isolation structure.
In another embodiment of the invention, the processing can also be H2O corona treatment.
Specifically, the H2The temperature of O corona treatment is 25 DEG C~500 DEG C, the H2The flow of O be 50sccm~
20slm, radio-frequency power 100W~1000W.H2After O is in plasma, reactivity enhancing, the oxygen is easier to and precursor material
Si in layer is combined, and forms Si-O key.
Also, inventor has found in H2In the environment of O, O is easier to form Si-O key in conjunction with Si, and reason may be due to H
Atom is easy to form Hydrogen Binding Adsorption with precursor material layer surface, so that the concentration of oxygen atoms near precursor material layer surface mentions
Height, and then probability of the oxygen in conjunction with silicon is improved, the efficiency for forming Si-O key is improved, and in the present embodiment, by the H2O etc. from
Sonization further enhances reactivity of the O in conjunction with Si, is consolidated to further improve the precursor material layer 300
Change and transform into the efficiency of dielectric layer, so as to also remained in the dielectric layer 301 that avoids the formation of a large amount of Si-H, Si-N or
Si-N-H and the isolation performance for influencing finally formed fleet plough groove isolation structure.
Fig. 5 is being please referred to the precursor material layer 300() it handles, it is formed after the dielectric layer 301, it can be with
The dielectric layer 301 is made annealing treatment, to further make annealing treatment.
In the present embodiment, described make annealing treatment includes the first annealing and the second annealing, and first described in progress
Second annealing, then carries out the first annealing again.
Second annealing is in H2Carried out under O steam atmosphere, it is described second annealing temperature be 300 DEG C~
500℃.In H2Further second annealing is carried out to dielectric layer under O steam atmosphere, the medium can be further decreased
Remaining Si-N, Si-H or Si-N-H key in layer, so that the material internal structure of dielectric layer 301 is closer, density is more uniform.
In the present embodiment, after carrying out second annealing, first further is carried out to the dielectric layer 301 and is moved back
Fire processing makes annealing treatment under the oxygen-free atmosphere such as nitrogen or inert gas to described the first of the dielectric layer 301 progress
It carries out, the temperature of first annealing is 700 DEG C~1000 DEG C.The temperature of first annealing is higher, can go
Except impurity such as part remaining N, H in the material of dielectric layer 301, defect in the dielectric layer 301 is repaired, the medium is improved
The isolation effect of layer 301.First annealing process can repair the fault of construction in dielectric layer, improve the strong of Si-O-Si key
Degree, while the chemical bonds such as remaining chemical bond strength weaker Si-H, Si-N, Si-N-H are removed, the impurity in dielectric layer is reduced,
Further increase the uniformity of the dielectric layer 301.
In other embodiments of the invention, the first annealing can also only be carried out.
Referring to FIG. 7, being stop-layer with the silicon oxide layer 101, using chemical mechanical milling tech, to the dielectric layer
301 carry out planarization process.
Using chemical mechanical milling tech, the removal certain media layer 301(higher than 101 surface of oxide layer is asked
With reference to Fig. 6) and silicon nitride layer 102(positioned at 101 surface of silicon oxide layer please refer to Fig. 6).
There is mobility using formation in the present embodiment, is filled in the trench using mobility chemical vapor deposition (FCVD)
Precursor material layer, then use microwave treatment or H2O corona treatment, so that the precursor material layer is converted into medium
Layer.Since microwave treatment enhances precursor material and the reactivity of solid gas, so as to improve the precursor material
Layer is changed into the curing efficiency of dielectric layer, to reduce the impurity content in the dielectric layer of formation, improves the dielectric layer
Isolation performance.
And in the present embodiment, after carrying out processing to the precursor material layer and it is made to be changed into dielectric layer, to described
The defects of dielectric layer is made annealing treatment, further remove the impurity in the dielectric layer, and reduce the dielectric layer, from
And further increase the isolation performance of the dielectric layer.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (14)
1. a kind of forming method of fleet plough groove isolation structure characterized by comprising
Semiconductor substrate is provided, is formed with groove in the semiconductor substrate；
The precursor material layer with mobility is formed in the semiconductor substrate surface, the precursor material layer fills the full ditch
Slot；
After forming precursor material layer, before being made annealing treatment, microwave treatment is carried out to the precursor material layer, is made described
Precursor material layer is transformed into dielectric layer, and the microwave treatment is in H2O steam, O3Gas, H2O liquid or O3Aqueous solution atmosphere under
It carries out, the microwave power of the microwave treatment is 50W~1000W, and the temperature of microwave treatment is 50 DEG C~500 DEG C, microwave treatment
Time be 60s~2h；
After carrying out microwave treatment, forming dielectric layer, before carrying out planarization process, the dielectric layer is carried out at annealing
Reason, the annealing includes the first annealing and the second annealing, or only carries out the first annealing.
2. the forming method of fleet plough groove isolation structure according to claim 1, which is characterized in that the precursor material layer
Contain Si -- H bond, Si-N key or Si-N-H key in material, the material of the dielectric layer is SiO2。
3. the forming method of fleet plough groove isolation structure according to claim 1, which is characterized in that form the precursor material
The method of layer is mobility chemical vapor deposition process.
4. the forming method of fleet plough groove isolation structure according to claim 3, which is characterized in that the mobility chemistry gas
Phase depositing operation use pre-reaction material include at least silane, disilane, methyl-monosilane, dimethylsilane, trimethyl silane,
Tetramethylsilane, ethyl orthosilicate, triethoxysilane, octamethylcy-clotetrasiloxane, tetramethyl disiloxane, tetramethyl cyclotetrasiloxane
One of siloxanes, trimethylsilyl amine, dimethyl silanyl amine.
5. the forming method of fleet plough groove isolation structure according to claim 3, which is characterized in that the mobility chemistry gas
Phase depositing operation is in H2And N2Mixed gas, N2、NH3、NH4OH、N2H4、NO、N2O、NO2、O3、O2、H2O2One or more of
It is carried out under atmosphere.
6. the forming method of fleet plough groove isolation structure according to claim 1, which is characterized in that the annealing includes
The temperature of the first annealing under nitrogen or atmosphere of inert gases, first annealing is 700 DEG C~1000 DEG C.
7. the forming method of fleet plough groove isolation structure according to claim 6, which is characterized in that the annealing is also wrapped
Include the H before the first annealing2The temperature of the second annealing under O steam atmosphere, second annealing is 300 DEG C
~500 DEG C.
8. a kind of forming method of fleet plough groove isolation structure characterized by comprising
Semiconductor substrate is provided, is formed with groove in the semiconductor substrate；
The siliceous precursor material layer with mobility is formed in the semiconductor substrate surface, the precursor material layer fills full institute
State groove；
After forming precursor material layer, before being made annealing treatment, H is carried out to the precursor material layer2O corona treatment,
The precursor material layer is set to be transformed into dielectric layer, the H2The temperature of O corona treatment is 25 DEG C~500 DEG C, the H2O's
Flow is 50sccm~20slm, radio-frequency power 100W~1000W；
Carrying out H2After O corona treatment, formation dielectric layer, before carrying out planarization process, the dielectric layer is moved back
Fire processing, the annealing includes the first annealing and the second annealing, or only carries out the first annealing.
9. the forming method of fleet plough groove isolation structure according to claim 8, which is characterized in that the precursor material layer
Contain Si -- H bond, Si-N key or Si-N-H key in material, the material of the dielectric layer is SiO2。
10. the forming method of fleet plough groove isolation structure according to claim 8, which is characterized in that form forerunner's material
The method of the bed of material is mobility chemical vapor deposition process.
11. the forming method of fleet plough groove isolation structure according to claim 10, which is characterized in that the mobility chemistry
The pre-reaction material that gas-phase deposition uses includes at least silane, disilane, methyl-monosilane, dimethylsilane, trimethyl silicane
Alkane, tetramethylsilane, ethyl orthosilicate, triethoxysilane, octamethylcy-clotetrasiloxane, tetramethyl disiloxane, tetramethyl
One of cyclotetrasiloxane, trimethylsilyl amine, dimethyl silanyl amine.
12. the forming method of fleet plough groove isolation structure according to claim 10, which is characterized in that the mobility chemistry
Gas-phase deposition is in H2And N2Mixed gas, N2、NH3、NH4OH、N2H4、NO、N2O、NO2、O3、O2、H2O2One of or it is several
It is carried out under kind atmosphere.
13. the forming method of fleet plough groove isolation structure according to claim 8, which is characterized in that the annealing packet
The first annealing under nitrogen or atmosphere of inert gases is included, the temperature of first annealing is 700 DEG C~1000 DEG C.
14. the forming method of fleet plough groove isolation structure according to claim 13, which is characterized in that the annealing is also
Including the H before the first annealing2The temperature of the second annealing under O steam atmosphere, second annealing is 300
DEG C~500 DEG C.
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