CN104350380B - Measurement apparatus and film formation device - Google Patents
Measurement apparatus and film formation device Download PDFInfo
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- CN104350380B CN104350380B CN201280073844.8A CN201280073844A CN104350380B CN 104350380 B CN104350380 B CN 104350380B CN 201280073844 A CN201280073844 A CN 201280073844A CN 104350380 B CN104350380 B CN 104350380B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
- G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
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- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
A kind of device that can be realized the measurement of more high speed and be obtained in that the measurement result of higher precision is provided, is used as the measurement apparatus that at least one of the optical characteristic value to film and blooming value value is measured.The measurement apparatus (101) measured including the value of at least one party in optical characteristic value and blooming value for being formed at the film of monitoring substrate (Sm) are possessed：Optical signal produces mechanism (10), and multiple LED units (11a～11f) are modulated into setpoint frequency mutually different for each light source cell using the monochromatic light generated by optical light filter by which, and send multiple optical signals；Irradiation means (20), which is multiplexed to the plurality of optical signal and is generated multiplexed signals, and is irradiated multiplexed signals to monitoring substrate (Sm) by optical fiber；Testing agency (30), its pass through fiber laser arrays by monitoring multiplexed signals that substrate (Sm) reflects and export electric signal；Signal separator mechanism (50), the electric signal exported to testing agency (30) by which implement the filtering process of bandpass filter, from the electric signal separate the twocomponent signal of each setpoint frequency；And mechanism (80) is calculated, its twocomponent signal based on each setpoint frequency that separates calculates the optical characteristic value represented by twocomponent signal according to each setpoint frequency, and the measurement apparatus measure multiple optical characteristic values simultaneously.
Description
Technical field
The present invention relates to for measure related to the thickness characteristic value measurement apparatus and be equipped with the measurement apparatus into
Film device, more particularly to can using optical characteristic value, blooming value as characteristic value measurement apparatus and be equipped with the survey
The film formation device of amount device.
Background technology
In the operation of optical film product as manufacture multilayer dielectric film optical filtering, operations described below is often carried out：
Monitor that the optical characteristics of the film of formation, blooming are while control membrance casting condition on substrate.That is, for measuring film
Optical characteristic value, the measurement apparatus of blooming value and be equipped with the measurement apparatus film formation device more known.
In addition, being used for measuring in the optical characteristic value of film, the measurement apparatus of blooming value, exist and just can enter
Go into the device of the change of the optical characteristic value of the film of measurement film forming procedure midway in the vacuum tank of film process, can enter
The device of row in-situ measurements (in-situ measurement).For example, trap is manufactured the film formation device for carrying out film forming based on evaporation is utilized
In the case of wave filter etc., if it is possible to by the refraction of phase measuring deposition material of the in-situ measurements in film forming procedure
Rate, then can efficiently using the deposition material, therefore, it is possible to improve yield rate.
Additionally, in the film formation device described in patent document 1, as one of the device that can carry out in-situ measurements
Example, the film projection measurement light in disclosing to film forming procedure simultaneously measure the decay of the measurement light for spectrum (light splitting ス ペ
Network ト Le) measurement apparatus.Also, in the film formation device described in patent document 1, can be in the decay by measuring measurement light
Obtained spectrum from target optical spectrum change when, in real time control membrance casting condition.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 7-90593 publication
Content of the invention
Invention problem to be solved
But, as the performance of measurement apparatus, it is naturally required that realizing the measurement of more high speed and obtaining the measurement of higher precision
As a result.On the other hand, it is desirable to structure simplerization of measurement apparatus.Particularly in the film formation device described in patent document 1,
Used polychromator or multichannel analyzer etc. measure spectrum required for optical splitter, the increasing number of constitution equipment corresponding to this,
Installation space and manufacturing cost become than larger.
Additionally, for executing in-situ measurements, in order to use deposition material being deposited with to substrate in film process
In the case of electron beam or plasma, veiling glare can be produced from electron beam or plasma.Caused by such veiling glare
Affect to exclude in existing spectroscopic measurements, up to now, it is difficult at the film forming for having used electron beam or plasma
In-situ measurements are executed in reason.
Therefore, it is an object of the invention to, there is provided a kind of measurement that can realize more high speed is simultaneously obtained in that higher precision
Measurement result device, be used as what at least one of the optical characteristic value to film and blooming value value was measured
Measurement apparatus.
In addition, other objects of the present invention are, structure is further simplified to the measurement apparatus for realizing above-mentioned purpose.
Further, other objects of the present invention are to provide a kind of film formation device, its can eliminate in film formation process by
Execute the in-situ realized by measurement apparatus to measure after the impact caused by veiling glare from electron beam or plasma.
Means for solving the problem
The problem is solved by following manner, and according to the measurement apparatus of the present invention, the measurement apparatus are directed to and are formed
In the film of measured use substrate, deposition material being deposited with to the measured use substrate using electron beam or plasma
During forming the film, measurement include the optical characteristic value including blooming value, wherein, the measurement apparatus possess with
Lower part：Optical signal produces mechanism, and the optical signal produces mechanism to be possessed using the monochromatic multiple light of optical light filter generation
Source unit, the optical signal produce mechanism and the monochromatic light of each for the plurality of light source cell self-generating are modulated into for each light source list
The mutually different setpoint frequency of unit and send multiple optical signals；Irradiation means, the irradiation means are to producing machine from the optical signal
The plurality of optical signal that structure sends is multiplexed and is generated multiplexed signals, and is irradiated to the measured substrate by optical fiber
The multiplexed signals；Testing agency, the testing agency is after being received by the irradiation means irradiation by optical fiber by the quilt
Measurement with substrate reflect or through the measured use substrate the multiplexed signals when, output electric signal as detection signal；
Signal separator mechanism, the Signal separator mechanism implement filtering process to the electric signal of testing agency output, thus from
The twocomponent signal of each setpoint frequency corresponding with the plurality of optical signal difference is separated and is extracted in the electric signal；With
And mechanism, each described setting that the calculating mechanism is separated from the electric signal is calculated based on the Signal separator mechanism
The twocomponent signal of frequency, calculates the optical characteristic value represented by the twocomponent signal, the kind of the setpoint frequency
Class number can be set at least more than 2 any amount, carry out the filtering process, the band logical filter using bandpass filter
The frequency corresponding with the veiling glare sent from the electron beam or the plasma is removed by ripple device, and band logical filter
The centre frequency of the transmission wave band of ripple device is configured to and the setpoint frequency identical frequency, and the Signal separator mechanism passes through
Implement the twocomponent signal that the filtering process extracts simultaneously each setpoint frequency, the calculating to the electric signal
Mechanism executes the parsing twocomponent signal and calculates the process of the optical characteristic value corresponding to each described setpoint frequency,
Thus, while measuring the optical characteristic value with the species number identical quantity.
In addition, the problem is solved by following manner, according to another measurement apparatus of the present invention, the measurement dress
Put for being formed at the film of measured use substrate, deposition material is being deposited with to described tested using electron beam or plasma
Amount substrate and during forming the film, while the multiple optical characteristic values including including blooming value of measurement, described
Measurement apparatus possess following part：Optical signal produces mechanism, and the optical signal produces mechanism to be possessed using optical light filter generation
Monochromatic multiple light sources unit, the optical signal produce mechanism and are modulated into the monochromatic light of each for the plurality of light source cell self-generating
Multiple optical signals are sent for the mutually different setpoint frequency of each light source cell；Irradiation means, the irradiation means to from
The plurality of optical signal that optical signal generation mechanism sends is multiplexed and is generated multiplexed signals, and by optical fiber to the quilt
Measurement substrate irradiates the multiplexed signals；Testing agency, the testing agency are being received by the irradiation means by optical fiber
After irradiation by described measured with substrate reflect or through the measured use substrate the multiplexed signals when, export electric signal
As detection signal；Signal separator mechanism, the Signal separator mechanism will be with from the electric signal of testing agency output
The twocomponent signal of the plurality of optical signal each setpoint frequency corresponding respectively is separated；And mechanism is calculated, described
The composition of each setpoint frequency that mechanism is separated from the electric signal is calculated based on the Signal separator mechanism
Signal, calculates the optical characteristic value represented by the twocomponent signal, and the Signal separator mechanism possesses lock-in amplifier,
The signal of lock-in amplifier detection CF is simultaneously amplified to the signal, the lock-in amplifier will with from the electricity
The corresponding frequency of veiling glare that beamlet or the plasma send is removed, and is configured to identical with the setpoint frequency
Centre frequency, the species number of the setpoint frequency can be set at least more than 2 any amount, by by the electric signal
The lock-in amplifier is input to, the Signal separator mechanism extracts the twocomponent signal of each setpoint frequency simultaneously,
The calculating mechanism executes the parsing twocomponent signal and calculates the optical characteristics corresponding to each described setpoint frequency
The process of value, thus, while measure the optical characteristic value with the species number identical quantity.
If any one device in above-mentioned 2 measurement apparatus, then can realize height by channeling technology
Fast and high-precision measurement.That is, if the measurement apparatus of the present invention, then multiple information can be obtained simultaneously, more particularly,
The measurement result of quantity corresponding with the species of setpoint frequency can once be obtained.Also, the measurement apparatus one using the present invention
Secondary obtain multiple measurement results as a result, compared with the existing mensuration only using the optical signal for being set as single-frequency, energy
Certainty of measurement is enough improved, and measuring speed becomes faster.
Give the account in greater detail, in the measurement apparatus of the present invention, while irradiation is corresponding with setpoint frequency each logical
The optical signal in road.On the other hand, as the thickness of the film as measured object changes, the optical signal of each passage saturating
Luminous intensity after penetrating or after reflection is changed respectively, but, by determining the change in each passage, can be logical according to each
Road obtains the optical characteristic value of above-mentioned film simultaneously.Thereby, it is possible in each passage, high accuracy at each setpoint frequency in other words
And instantaneously obtain optical characteristic value.Such effect cannot be by combination CMOS or ccd sensor in optical splitter
Spectrometer is realizing.This is because, in spectrometer, although optical characteristic value can be obtained at high speed, but then, due to
Circuit in CMOS or ccd sensor can produce intrinsic noise etc., therefore can produce no small measure error.Therefore, this
Bright above-mentioned 2 measurement apparatus not only can ground identical with spectrometer at a high speed obtain multiple optical characteristic values, and and spectrum
Instrument is compared, additionally it is possible to realize the measurement of higher precision.
Additionally, in above-mentioned 2 measurement apparatus, for any one, do not use in the signal of division multiplexing point
Light device can be completed, and therefore correspondingly, the structure of measurement apparatus becomes simple.
In addition, in above-mentioned measurement apparatus, Ke Yiwei：Digital Signal Processing is additionally provided with the measurement apparatus
Device, the composition letter of each setpoint frequency of the digital signal processor to separating from the detection signal
Implement number respectively enhanced processing, the calculating mechanism based on the enhanced processing after the twocomponent signal calculating the composition
The optical characteristic value represented by signal.
If above structure, then due to used the twocomponent signal after enhanced processing as calculate mechanism carried out
Calculating process used in signal, therefore, it is possible to obtain more accurate result of calculation.That is, if above-mentioned structure, then
It is obtained in that more accurate result as the measurement result of measurement apparatus.
Further, aforesaid problem is solved by following manner, a kind of film formation device, and the film formation device possesses vacuum appearance
Device and evaporation mechanism, the vacuum tank receive substrate, the evaporation mechanism in the vacuum tank using electron beam or wait from
Daughter is deposited with deposition material to the substrate, and wherein, the film formation device possesses any one institute in technical scheme 1 to 3
The measurement apparatus that states, during forming film on the substrate, receive in the vacuum tank in the vacuum tank
There are the measured use substrate, the evaporation mechanism that also the deposition material is deposited with to the measured use substrate, described
During forming film on the substrate in vacuum tank, the measurement apparatus keep the measured use substrate reception in
In the state of in the vacuum tank, for the film for being formed at the measured use substrate-side, while measurement includes blooming
Thick value is in interior multiple optical characteristic values.
In above-mentioned film formation device, bandpass filter or the function of lock-in amplifier can be utilized to remove from testing agency
The composition corresponding with the veiling glare sent from electron beam or plasma in the electric signal of output.Thus, in film formation process
In, in-situ can be executed in the case where not affecting by the veiling glare of electron beam or plasma measure.Obtain the effect
Result be：Can save in order to measure optical characteristic value, blooming value and make monitoring in the way of batch processing with thin
Time as film product, therefore so that the productivity ratio of optical film product is improved, in addition, the usage amount of deposition material is also obtained
To saving.
The effect of invention
If the measurement apparatus described in technical scheme 1 or 2, at a high speed and high as channeling technology can be utilized to realize
The measurement of precision, therefore, is not only able to ground identical with spectrometer and obtains multiple optical characteristic values at a high speed, and, with spectrometer phase
Than, additionally it is possible to realize the measurement of higher precision.In addition, with do not use optical splitter correspondingly, the structure of measurement apparatus becomes simple.
If the measurement apparatus described in technical scheme 3, then it is obtained in that more accurate result as measurement apparatus
Measurement result.
If the film formation device described in technical scheme 4, then in film formation process, can not receive from electron beam or wait from
In-situ measurements are executed in the case of the impact of the veiling glare that daughter sends.
Description of the drawings
Fig. 1 is the figure of the Sketch of the film formation device for illustrating present embodiment.
Fig. 2 is that the optical signal for illustrating present embodiment produces the schematic diagram of the structure of mechanism and irradiation means.
Fig. 3 is the concept map of the measuring method for illustrating present embodiment.
Fig. 4 is the testing agency of the 1st that illustrates present embodiment and the schematic diagram of Signal separator mechanism.
Fig. 5 is the testing agency of the 2nd that illustrates present embodiment and the schematic diagram of Signal separator mechanism.
Specific embodiment
Hereinafter, referring to the drawings embodiments of the present invention (hereinafter referred to as present embodiment) are illustrated.
Fig. 1 is the figure of the Sketch of the film formation device for illustrating present embodiment.Fig. 2 is the light letter for illustrating present embodiment
Number produce the schematic diagram of the structure of mechanism and irradiation means.Fig. 3 is the concept map of the measuring method for illustrating present embodiment.Fig. 4
It is testing agency and the schematic diagram of Signal separator mechanism of the 1st that illustrates present embodiment.Fig. 5 illustrates present embodiment
The testing agency of the 2nd and the schematic diagram of Signal separator mechanism.
First, the Sketch of the film formation device of present embodiment is illustrated with reference to Fig. 1.
Film formation device is to form the dress of film by deposition material is deposited with the surface to substrate in vacuum tank 1
Put.Below, as an example of film formation device, illustrate by taking film formation device 100 as an example, the film formation device 100 is utilized
The deposition material evaporated by irradiating electron beam EB is carrying out film forming.But, this is not limited to, as this can be applied
Bright film formation device, it may be considered that deposition material is deposited with using plasma using plasma CVD (chemical vapor deposition) method
Method to substrate makes ionic bombardment target to carry out the sputtering method or ion plating method of film forming to carry out the device of film forming, utilize
To carry out the device of film forming.
In the film formation device 100 of present embodiment, substrate (hereinafter referred to as actual substrate is provided with vacuum tank 1
S) and film thickness measuring monitoring substrate Sm, in film formation process, the film that is formed at monitoring substrate Sm sides can be monitored
Film quality suitably adjusts membrance casting condition on one side.
More specifically illustrate, in the present embodiment, in the film formation process that film is formed in actual substrate S,
Film is also formed on monitoring substrate Sm with the condition same with actual substrate S-phase.I.e., in the present embodiment, treat on an equal basis
The film quality of the film that actual substrate S side is formed and the film quality of the film formed in monitoring substrate Sm sides, by monitoring base
The film quality of the film of plate Sm sides monitored, thus managing the film quality of the film of actual substrate S side.
Here, actual substrate S is the substrate for being practically used as optical film product.On the other hand, monitoring substrate Sm is suitable
In measured use substrate, as described above, monitor that substrate Sm is to monitor film quality and the substrate that uses.
Also, film quality is the optical characteristic value of the index related to the optical signature of film, i.e. film, in this embodiment party
In formula, optical characteristic value is including the concept including blooming value.In addition, optical characteristic value is gone back in addition to blooming value
Reflectivity, transmissivity including film (for tightened up, being the deposition material for constituting film), refractive index, absorptivity.
The structure of film formation device 100 is illustrated, as shown in figure 1, as main component parts, film formation device 100
Possess vacuum tank 1, substrate holder 2, evaporation mechanism 5 and measurement apparatus 101.With regard to each component parts of film formation device 100,
In addition to measurement apparatus 101, remaining component parts is taken on known device with the film formation device as vacuum evaporation mode
The part of load is roughly the same.
Specifically illustrate, the substrate holder of arch is configured with the inner space top of the vacuum tank 1 of hollow form
2, multiple actual substrates S are installed on the inner surface of the substrate holder 2.In addition, the central portion in substrate holder 2 is formed
There is opening, a monitoring substrate Sm is provided with immediately below the opening.Additionally, for the film-forming amount made between actual substrate S
Uniform purpose, in the implementation procedure of film formation process, makes substrate holder 2 revolve centered on the rotary shaft along vertical direction
Turn.
Evaporation mechanism 5 is configured with the inner space bottom of vacuum tank 1.The evaporation mechanism 5 of present embodiment is in film forming
During process, deposition material is deposited with to actual substrate S using electron beam in vacuum tank 1.More specifically said
Bright, evaporation mechanism 5 has the electron gun 4 of the crucible 3 and irradiating electron beam EB of storage deposition material, and evaporation mechanism 5 will be from electricity
The electron beam of sub- rifle 4 exposes to the deposition material in crucible 3 so that deposition material evaporation.
Using above structure film formation device 100 come execute in actual substrate S formed film film formation process.In addition,
As it was previously stated, during forming film in actual substrate S in vacuum tank 1, being accommodated with monitoring substrate in vacuum tank 1
Sm, evaporation mechanism 5 are also deposited with deposition material to monitoring substrate Sm.I.e., in the present embodiment, in film formation process, in reality
Roughly the same film is formed on border substrate S and monitoring substrate Sm both sides.
Also, equipment in film formation device 100, working when membrance casting condition is adjusted is controlled by controller 90.The control
Device processed 90 is to control object equipment output control signal.Also, control object equipment receives the control letter from the output of controller 90
Worked according to the signal after number, thus adjust membrance casting condition.
Next, in the component parts of film formation device 100, as present embodiment feature measurement apparatus 101
Illustrate.
Measurement apparatus 101 pairs be formed at monitoring substrate Sm film including in optical characteristic value and blooming value extremely
A few side is measured in interior value.Hereinafter, illustrated with measurement apparatus 101 as concrete example, 101 pairs of works of the measurement apparatus
Refractive index and blooming value both sides for optical characteristic value is measured.But, it is not limited to this, or birefringence
Device or only any one value in optical characteristic value and blooming value is entered that optical characteristic value beyond rate is measured
The device of row measurement.
In order to measure refractive index and blooming value, measurement apparatus 101 are incident to light and are formed at the thin of monitoring substrate Sm
Film.The light is reflected on monitoring substrate Sm or by monitoring substrate Sm, its reflected light or transmitted light quilt equivalent to measurement light, the light
Testing agency described later 30 receives.Also, measurement apparatus 101 are receiving above-mentioned reflected light or transmission based on testing agency 30
The detection signal of light time output, calculates the refractive index and blooming value of film as the value represented by the detection signal.
More specifically illustrate, as shown in figure 1, used as main component parts, measurement apparatus 101 are produced with optical signal
Mechanism 10, irradiation means 20, testing agency 30, Signal separator mechanism 50, digital signal processor 70 (are marked in Fig. 1,4 and 5
For DSP) and calculate mechanism 80.Hereinafter, each component parts of measurement apparatus 101 is illustrated.
Optical signal produces mechanism 10 and there is light source, its optical signal that will be sent from light source using opticses such as collector lenses
Guide to irradiation means 20.
Also, the optical signal of present embodiment produces mechanism 10 and is made up of multiple light sources, its light that will be sent from each light source
Be modulated into the frequency of regulation, and using modulation after light guide to irradiation means 20 as optical signal.Here, optical signal produces mechanism
Frequency after the frequency of 10 optical signals for producing is modulated is configured to for each light source is different.That is, present embodiment
Optical signal produce mechanism 10 send multiple optical signals, the plurality of optical signal is modulated into mutually different setpoint frequency.
As shown in Fig. 2 optical signal produces mechanism 10, and to possess multiple LED as light source cell for being equipped on light projector mono-
Unit.Particularly, in the present embodiment, 6 LED units are provided with.Also, the number of LED unit is not limited to above-mentioned
Quantity, as long as at least more than 2, it is possible to it is set as arbitrary quantity.
Hereinafter, by 6 LED units be referred to as 1LED unit 11a, 2LED unit 11b, 3LED unit 11c,
4LED unit 11d, 5LED unit 11e, 6LED unit 11f.
1LED unit 11a～the 6LED units 11f possess the monochromatic LED of White LED or RGB systems respectively, are used for LED
The constant-current driver of supply constant current, for light to be adjusted to collimation lens, optical light filter and the optically focused of directional light
Lens.Here, for the LED as light source of each LED unit 11a～11f, having used and output occurred with the wave band in regulation
The LED of the output wavelength characteristic of the peak value of power.Also, for the ease of diagram, these parts are not illustrated.
By above-mentioned structure, each LED unit 11a～11f generates monochromatic light using optical light filter.Specifically said
Bright, in each LED unit 11a～11f, between LED and collector lens, minute surface is inclined about with the optical axis relative to LED
45 degree of state is configured with the dichronic mirror as the 1st optical light filter.In addition, between LED and dichronic mirror, more particularly,
In the downstream of collimation lens and dichronic mirror upstream side, be configured with the bandpass filter mirror as the 2nd optical light filter.Here,
2nd optical light filter is preferably configured as：Having the injection light projected towards the 1st optical light filter for being located at downstream becomes
The spatial distribution of light output as 20nm (preferably 15nm) half breadths below.Thereby, it is possible to be penetrated by collector lens
Go out the narrower output light of wave band, be favorably improved the certainty of measurement of blooming.
Further, sending for the optical signal from each LED unit 11a～11f, adopts with to correct quartz (controlled) oscillator
Frequency divided obtained by crossover frequency sending the pulse drive mode of optical signal.Thus, to sending out from each LED unit
The optical signal for going out is modulated, with regard to modulation after optical signal (below, also referred to as modulate after optical signal) frequency, in 1LED
It is 1310Hz in unit 11a, is 1092Hz in 2LED unit 11b, is 867Hz in 3LED unit 11c, in 4LED
It is 678Hz in unit 11d, is 437Hz in 5LED unit 11e, is 218Hz in 6LED unit 11f.
Also, the modulation system with regard to optical signal, is not limited to above-mentioned content, as long as by optical signal modulation can be
Above-mentioned frequency, then can also utilize known modulator approach, such as Direct Digital Synthesizer (Direct Digital
Synthesizer, DDS) being modulated.
With regard to the frequency of optical signal after each modulation, above-mentioned setting value is not limited in addition, as long as be set to energy
Enough values for rightly executing measurement, it is also possible to the value being set to beyond above-mentioned value.
After 20 pairs of 6 kinds of modulation sent from optical signal generation mechanism 10 of irradiation means, optical signal is multiplexed and is generated multiplexing
Signal.Also, irradiation means 20 irradiate multiplexed signals by optical fiber LF to monitoring substrate Sm.I.e., in the present embodiment, it is not
After 6 kinds are modulated, signal exposes to monitoring substrate Sm respectively, but signal (in figure, is marked after as shown in Figure 3 modulate 6 kinds
It is designated as f1, f2, f3, f4, f5, f6) be multiplexed and monitoring substrate Sm is exposed to as a signal.Accordingly, with respect to composition transmission path
The optical fiber LF in footpath, it is not necessary to arrange optical fiber LF for signal after each modulation, as shown in figure 3, only arrange one to be used for transmitting
The optical fiber LF of multiplexed signals.
The irradiation means 20 and optical signal with function above are taken together with producing mechanism 10 i.e. 6 LED unit 11a～11f
It is loaded in light projector.Also, used as main component parts, irradiation means 20 possess multiple dichronic mirrors 21 and collector lens 22.
The structure of the irradiation means 20 of present embodiment is described in detail, 5 dichronic mirrors 21 are provided with, such as Fig. 2 institutes
Show, each dichronic mirror 21 is configured to corresponding with 2LED unit 11b～the 6LED unit 11f respectively.Also, with regard to dichronic mirror 21
Number, be not limited to above-mentioned number (5), it is preferred, however, that number corresponding with the number of LED unit, especially
It is the quantity of number only few as in this embodiment than LED.
5 dichronic mirrors 21 are configured to linearly arrange along the light path towards collector lens 22.In addition, each dichronic mirror 21
It is configured to incline 45 degree of state relative to the light path of optical signal after the modulation sent from corresponding LED unit.On the other hand,
1LED units 11a is arranged side-by-side with above-mentioned 5 dichronic mirrors 21, and in more detail, 1LED unit 11a are configured to be located at than above-mentioned
Light path in be located at most upstream side 21 upstream side of dichronic mirror position.
Here, each dichronic mirror 21 have only make regulation wavelength (in other words, it is stipulated that frequency) light pass through and make
The property of the light reflection of wavelength in addition.In the present embodiment, using the dichroism of such dichronic mirror 21, can
Optical signal synthesis after multiple modulation is generated multiplexed signals.
Specifically illustrate, the transmission wave band (saturating domain) of 5 dichronic mirrors 21 of linearly arrangement is from upstream side
620～780nm, 580～780nm, 540～780nm, 500～780nm, 440～780nm are set to successively.
When optical signal is sent from 1LED units 11a to 5 dichronic mirrors 21 for setting wave band as above, only ripple
The optical signal of a length of 640nm passes through dichronic mirror 21.In addition, when optical signal is sent from 2LED unit 11b, with 2LED units
The corresponding dichronic mirrors 21 of 11b cause the light reflection being not in its wave band (580～780nm).Also, only have in its reflected light
Wavelength passes through remaining dichronic mirror 21 for the optical signal of 600nm.
By above such effect, light letter after the modulation for sending from 1LED unit 11a and 2LED unit 11b respectively
Number synthesized by dichronic mirror 21.According to same order, for optical signal after the modulation from 3LED unit 11c, only wavelength
Signal for 560nm is extracted, for optical signal after the modulation from 4LED unit 11d, only signal of the wavelength for 520nm
It is extracted, for optical signal after the modulation from 5LED unit 11e, only wavelength is extracted for the signal of 480nm, for next
From optical signal after the modulation of 6LED unit 11f, only wavelength is extracted for the signal of 440nm.
Then, by optical signal after modulation, passed through the transmission light compositing after dichronic mirror 21, thus generate to 6 kinds adjust
After system, optical signal carries out the multiplexed signals being multiplexed.Multiplexed signals is from after 23 optically focused of collector lens by optical fiber to monitoring substrate
Sm irradiates.
Also, in the present embodiment, use dichronic mirror 21 to be multiplexed optical signal, but be not limited to this.That is,
Method with regard to being multiplexed to optical signal, can be the known method outside the method using dichronic mirror 21, for example, it is possible to
It is using optical multiplexer or the method for multilayer dielectric film optical filtering.
After the irradiation of illuminated mechanism 20 detects by optical fiber in testing agency 30, by monitoring substrate Sm reflections or through monitoring
The multiplexed signals of substrate Sm, and export detection signal.Particularly, the testing agency 30 of present embodiment possesses photoelectric conversion element
Part, the multiplexed signals reflected after the testing agency 30 receives the irradiation of illuminated mechanism 20, by monitoring substrate Sm, and export telecommunications
Number as detection signal.
Isolate in the electric signal exported from testing agency 30 by Signal separator mechanism 50 corresponding with optical signal after each modulation
Each setpoint frequency twocomponent signal.Here, existing and optical signal equal number, i.e. 6 kinds twocomponent signals after modulation, such as scheme
Shown in 3, twocomponent signal is corresponding with the frequency of optical signal after modulation.
Illustrate with being easier to understand, above-mentioned electric signal is that testing agency 30 is being received by the Sm reflections of monitoring substrate
Multiplexed signals when the electric signal that exported, it may be said that be by testing agency 30 after the modulation being respectively received after multiplexing light letter
Number each reflected light when exported electric signal synthesis electric signal.Also, Signal separator mechanism 50 is from testing agency
In 30 electric signals for being exported, the frequency identical frequency with optical signal after the modulation sent from each LED unit is extracted and isolates
The twocomponent signal of rate.I.e., it is possible to comparably regard each twocomponent signal that is isolated by Signal separator mechanism 50 as testing agency
30 electric signals exported during each reflected light of optical signal after the modulation being respectively received after multiplexing.
Also, in figure 3, each modulate after the frequency of optical signal be marked as n1～n6, twocomponent signal be marked as g1～
G6, marked frequency corresponding with twocomponent signal in bracket.For example, twocomponent signal g1 with send from 1LED unit 11a
After modulation, frequency n1 of optical signal f1 is corresponding, optical signal f3 after twocomponent signal g3 and the modulation that sends from 3LED unit 11c
Frequency n3 corresponding.
As described above, in the measurement apparatus 101 of present embodiment, frequency multiplexing technique is employed, it is possible thereby to realize
High speed and high-precision measurement.I.e., in the present embodiment, after can obtaining simultaneously and modulate with form as twocomponent signal
The frequency of optical signal is the electric signal of the species equal number of setpoint frequency.Therefore, it is possible to obtain each twocomponent signal institute table simultaneously
The value shown, i.e. with twocomponent signal identical quantity (in other words, quantity corresponding with the species of setpoint frequency) with regard to monitoring
The measurement result of substrate Sm.As a result, in the present embodiment, compared with existing measuring method, certainty of measurement is improve,
And measuring speed also becomes faster.
Here, as it was previously stated, the effect above of the measurement apparatus 101 of present embodiment cannot pass through to combine in optical splitter
The spectrometer of CMOS or ccd sensor is realizing.This is because：In the case of spectrometer, due to passing in CMOS or CCD
The natural noise produced in circuit in sensor and the plasma light produced in vacuum tank 1 or veiling glare etc., can produce
No small measure error.On the other hand, in the measurement apparatus 101 of present embodiment, can exclude above-mentioned error will be because, from
And realize high speed and high-precision measurement.
Also, the value represented by each twocomponent signal be constitute film deposition material refractive index and blooming value, energy
Enough the value is obtained according to each setpoint frequency.In addition, in figure 3, the blooming value of each setpoint frequency by label d1～
D6 represents that the refractive index of each setpoint frequency is represented by label s1～s6.
The structure of the testing agency 30 and Signal separator mechanism 50 of present embodiment is described in detail.
The testing agency 30 of present embodiment (in figure, is labeled as by illustrated photosensitive amplifier 31 in Figure 4 and 5
PSA) constitute.The photodiode as photo-electric conversion element is built-in with the photosensitive amplifier 31, the photosensitive amplifier 31
The photoelectric current sent when photodiode is received light is converted to voltage, and output voltage signal.That is, present embodiment
Testing agency 30 carries out I/V conversions after multiplexed signals is received by photodiode, and by electric signal is more particularly
Voltage signal is exported as detection signal.
With regard to the structure of the Signal separator mechanism 50 of present embodiment, one example figure 4 illustrates.Specifically said
Bright, the Signal separator mechanism 50 of present embodiment is amplified by by preamplifier 51 electric signal exported by testing agency 30,
And to enhanced processing after electric signal implement filtering process.According to the order, Signal separator mechanism 50 is from above-mentioned electric signal
Extract the twocomponent signal of each setpoint frequency.Here, the wave filter 52 used in filtering process is analog filter, more specifically
For, it is the bandpass filter for passing through multiple passages.I.e., in the present embodiment, each transmission wave band of bandpass filter
Centre frequency is set to and setpoint frequency identical frequency, specifically, be set to 1310Hz, 1092Hz, 867Hz,
678Hz、437Hz、218Hz.
So, in the present embodiment, from multiplexing signal, be more particularly separate from electric signal each setting
During the twocomponent signal of frequency, using wave filter.I.e., in the present embodiment, due to not using in the signal of division multiplexing point
Light device can be completed, and therefore correspondingly, apparatus structure becomes simple.
Also, the twocomponent signal of each setpoint frequency that isolates quilt after data signal is converted to by A/D converter 53
It is committed to digital signal processor 70.
Also, bandpass filter in the present embodiment, is only used as wave filter 52, but be not limited to this,
Can be using the analog filter beyond bandpass filter, you can be applied in combination high-pass filter and low pass filter.
In addition, in the present embodiment, analog filter has been used as wave filter 52, but it is also possible to use conduct
The FIR filter (having limit for length's unit impulse response wave filter) of digital filter.If that is, using centre frequency be set to
Setpoint frequency identical frequency, specifically centre frequency be set to 1310HZ, 1092Hz, 867Hz, 678Hz, 437Hz,
The digital filter of 218Hz, then isolate the composition of each setpoint frequency from testing agency 30 in the electric signal that can be exported
Signal.Also, in the case of FIR filter is used as digital filter, its exponent number is set to 175～512.
In addition, the structure of the Signal separator mechanism 50 with regard to present embodiment, it is also possible to consider said structure, i.e. using filter
The structure that ripple device 52 comes outside the structure of separated component signal.Specifically illustrate, as the structure of Signal separator mechanism 50, also
The structure shown in Fig. 5 can be considered.By the Signal separator mechanism 50 of illustrated structure in Fig. 5 electricity exported by testing agency 30
Signal input is to the lock-in amplifier 60 as main amplifier.The lock-in amplifier 60 has the specific frequency in the signal of input
The function that the signal detection of rate out and to which is amplified.
Particularly, the lock-in amplifier 60 of present embodiment has the passage with the species equal number of setpoint frequency.Cause
This, by the electric signal exported by testing agency 30 is input to lock-in amplifier 60, thus, Signal separator illustrated in Fig. 5
The twocomponent signal of each setpoint frequency is extracted from the electric signal and is amplified by mechanism 50.
Lock-in amplifier 60 is described in detail, as it was previously stated, the electric signal from the output of testing agency 30 is defeated
Enter to lock-in amplifier 60.At the same time, will be set as giving birth to from contrast signal with the contrast signal of setpoint frequency identical frequency
Lock-in amplifier 60 is input to into device 67.In addition, as shown in figure 5, lock-in amplifier 60 possesses：Preamplifier 61, which is right
The electric signal of input, specifically voltage signal are amplified；Wave filter 62, its remove the higher hamonic wave contained in electric signal
And overlapped signal；Wave forming circuit 65, it is wavy which makes contrast signal be configured to rectangle；And Phase Processing circuit 66, which is adjusted
Phase difference between whole contrast signal and electric signal.Also, as above-mentioned wave filter 62, for example, can utilize bandpass filter
Or frequency overlapped-resistable filter.
Lock-in amplifier 60 is also equipped with：Synchro detection circuit 63, its carry out the frequency conversion based on synchronous detection；And low pass
Wave filter 64 (in Figure 5, being labeled as LPF), its will be straight after removing alternating component from the output signal of synchro detection circuit 63
Stream composition takes out.Structure according to as above, lock-in amplifier 60 can utilize the electric signal and contrast signal of input by electricity
The twocomponent signal of each setpoint frequency in signal is extracted and is amplified.That is, the centre frequency quilt of lock-in amplifier 60
Be set as and setpoint frequency identical frequency, specifically, be set to 1310Hz, 1092Hz, 867Hz, 678Hz, 437Hz,
218Hz.
As described above, signal after using lock-in amplifier 60 by multiplexing, being more particularly to be divided into electric signal
In the structure of the twocomponent signal of each setpoint frequency, also identical with the situation using bandpass filter 52, in the letter of division multiplexing
Number when do not use optical splitter by complete, therefore correspondingly, apparatus structure becomes simple.
Also, the twocomponent signal of each setpoint frequency that isolates quilt after data signal is converted to by A/D converter 53
It is committed to digital signal processor 70.
Also, with regard to lock-in amplifier 60, it is possible to use analog lock-in amplifier, digital lock-in amplifier,
The digital lock-in amplifier being made up of digital signal processor or computer.
The twocomponent signal difference of 70 pairs of each setpoint frequencies that is isolated by Signal separator mechanism 50 of digital signal processor
Implement Digital Signal Processing, the i.e. enhanced processing for amplifying signal.Then, after digital signal processor 70 is by enhanced processing into
Sub-signal is committed to calculating mechanism 80.
Twocomponent signal of the mechanism 80 based on each setpoint frequency that is isolated by Signal separator mechanism 50 is calculated, according to each
Setpoint frequency calculates the value represented by each twocomponent signal.Particularly, the calculating mechanism 80 of present embodiment is based on by data signal
Processor 70 is exaggerated the twocomponent signal after processing and carrys out the value represented by calculating composition signal.So, by using amplification
Twocomponent signal after process can obtain more accurately calculating as the signal used in processing in the calculating for calculating mechanism 80
As a result.I.e., in the present embodiment, the measurement result that more accurate result is used as measurement apparatus 101 can be obtained.
Calculate mechanism 80 to be made up of computer, which is by executing at the calculating for specifying the twocomponent signal as data signal
Manage to parse the twocomponent signal.By the parsing, it is possible to obtain the value represented by twocomponent signal, be specifically formed at monitoring
The refractive index refractive index of the deposition material for constituting film (strictly, be) and the blooming value of the film of substrate Sm.
Also, in the present embodiment, execute for each twocomponent signal, in other words for each setpoint frequency above-mentioned
Parsing.Therefore, in the present embodiment, the refractive index and blooming value of film is determined according to each setpoint frequency.
More specifically illustrate, to film forming procedure in substrate irradiation optical signal when reflectivity corresponding to blooming
Change.In addition, the shape of the curve with regard to representing the correlation between blooming and reflectivity, it is known that the shape of the curve
Change corresponding to the frequency (wavelength) of the optical signal of irradiation.Using such property, in the present embodiment, by using quilt
The optical signal of mutually different multiple frequencies is modulated into, blooming can be calculated respectively according to each setpoint frequency.
Further, refractive index from the film for being denoted as result of calculation to controller 90 and blooming that mechanism 80 sends are calculated
The data of value.Receive the data controller 90 can according to the refractive index of the film specified by the data, blooming value come
Adjustment membrance casting condition.
In the film formation device 100 for being equipped with the measurement apparatus 101 for constituting as described so, film formation process can executed
During monitor the film of formation on the monitoring substrate Sm in the vacuum tank 1.That is, by using the survey of present embodiment
Amount device 101, during can forming film, is accommodated in monitoring substrate Sm is kept in vacuum tank 1 in actual substrate S
Refractive index and blooming value in the state of in vacuum tank 1 to being formed at the film for monitoring substrate Sm carries out in-situ surveys
Amount.
Illustrate to the reason for in-situ is measured can be carried out in the present embodiment, using electron beam or waiting
In the case that gas ions are deposited with deposition material to actual substrate S, the shadow of the veiling glare sent from electron beam or plasma
Ring impact can be produced on the measurement result related to the refractive index of film, blooming value.On the other hand, in present embodiment
In, the function of the wave filters 52 such as aforesaid bandpass filter or lock-in amplifier 60 can be utilized, will be exported from testing agency 30
Electric signal in the composition corresponding with above-mentioned veiling glare filter.Thus, even if in film formation process, it is also possible to execute in-
Situ is measured, without being affected by the veiling glare of electron beam or plasma.
Also, in the present embodiment, due to can execute well in-situ measurement, therefore, there is no need to spend in order to
Measure refractive index or blooming value and the time of film is formed in the way of batch processing on monitoring substrate Sm.Its result
It is that operability into film process, the in other words productivity ratio of film product are improved.
Further, since without the need for separately carrying out the batch processing for forming measuring film on monitoring substrate Sm, therefore, steaming
The consumption of plating material can also be inhibited.
Further, since refractive index, the blooming value of film can be obtained according to each setpoint frequency, it is thus possible to enough
Specify as the index distribution in the film of measurement object, film thickness distribution, if the message reflection related to the distribution is arrived
In the adjustment of membrance casting condition, then can more accurately carry out the filming control of film.
So far, the measurement apparatus and film formation device of present embodiment are illustrated, but, present embodiment is only
It is that above-mentioned part, configuration etc. do not limit the present invention, certainly may be used for making the understanding of the present invention become an easy example
To carry out various changes, improvement according to spirit of the invention, also, the present invention also includes its equivalent certainly.For example, with regard to structure
Size, size into each equipment of measurement apparatus, shape, material, the content for describing above are merely used for playing the present invention
Effect an example, do not limit the present invention.
Label declaration：
1：Vacuum tank；
2：Substrate holder；
3：Crucible；
4：Electron gun；
5：Evaporation mechanism；
10：Optical signal produces mechanism；
11a、11b、11c、11d、11e、11f：LED unit；
20：Irradiation means；
21：Dichronic mirror；
22：Collector lens；
30：Testing agency；
31：Photosensitive amplifier；
50：Demultiplexer；
51：Preamplifier；
52：Wave filter；
53：A/D converter；
60：Lock-in amplifier；
61：Preamplifier；
62：Wave filter；
63：Synchro detection circuit；
64：Low pass filter；
65：Wave forming circuit；
66：Phase Processing circuit；
67：Contrast signal generating means；
70：Digital signal processor；
80：Calculate mechanism；
90：Controller；
100：Film formation device；
101：Measurement apparatus；
LF：Optical fiber；
S：Actual substrate；
Sm：Monitoring substrate；
EB：Electron beam.
Claims (4)
1. a kind of measurement apparatus, the measurement apparatus using electron beam or are being waited for the film for being formed at measured use substrate
Gas ions are deposited with deposition material to the measured use substrate and during forming the film, and measurement includes blooming value
In interior optical characteristic value,
The measurement apparatus are characterised by,
The measurement apparatus possess following part：
Optical signal produces mechanism, and the optical signal produces mechanism to be possessed using the monochromatic multiple light sources list of optical light filter generation
Unit, the optical signal produce mechanism and the monochromatic light of each for the plurality of light source cell self-generating are modulated into for each light source cell is mutual
The setpoint frequency that differs and send multiple optical signals；
Irradiation means, the irradiation means are multiplexed to the plurality of optical signal sent from optical signal generation mechanism and are given birth to
Into multiplexed signals, and the multiplexed signals is irradiated to the measured substrate by optical fiber；
Testing agency, the testing agency measured use substrate by described after receiving by irradiation means irradiation by optical fiber
Reflection or through the measured use substrate the multiplexed signals when, output electric signal as detection signal；
Signal separator mechanism, the Signal separator mechanism implement filtering process to the electric signal of testing agency's output, by
This separates from the electric signal and extracts the composition letter of each setpoint frequency corresponding with the plurality of optical signal difference
Number；And
Calculate mechanism, the calculating mechanism separated from the electric signal based on the Signal separator mechanism each described in set
Determine the twocomponent signal of frequency, calculate the optical characteristic value represented by the twocomponent signal,
The species number of the setpoint frequency can be set at least more than 2 any amount,
Carry out the filtering process using bandpass filter, the bandpass filter will with from the electron beam or described etc. from
The corresponding frequency of veiling glare that daughter sends is removed, and the centre frequency of the transmission wave band of the bandpass filter is set
Into with the setpoint frequency identical frequency,
The Signal separator mechanism extracts each described setting frequency simultaneously by implementing the filtering process to the electric signal
The twocomponent signal of rate, the calculating mechanism execute the parsing twocomponent signal and count corresponding to each described setpoint frequency
The process of the optical characteristic value is calculated, thus, while measuring the optical characteristics with the species number identical quantity
Value.
2. a kind of measurement apparatus, the measurement apparatus using electron beam or are being waited for the film for being formed at measured use substrate
Gas ions are deposited with deposition material to the measured use substrate and during forming the film, and measurement includes blooming value
In interior optical characteristic value,
The measurement apparatus are characterised by,
The measurement apparatus possess following part：
Optical signal produces mechanism, and the optical signal produces mechanism to be possessed using the monochromatic multiple light sources list of optical light filter generation
Unit, the optical signal produce mechanism and the monochromatic light of each for the plurality of light source cell self-generating are modulated into for each light source cell is mutual
The setpoint frequency that differs and send multiple optical signals；
Irradiation means, the irradiation means are multiplexed to the plurality of optical signal sent from optical signal generation mechanism and are given birth to
Into multiplexed signals, and the multiplexed signals is irradiated to the measured substrate by optical fiber；
Testing agency, the testing agency measured use substrate by described after receiving by irradiation means irradiation by optical fiber
Reflection or through the measured use substrate the multiplexed signals when, output electric signal as detection signal；
Signal separator mechanism, the Signal separator mechanism will be with the plurality of light from the electric signal of testing agency's output
The twocomponent signal of signal each setpoint frequency corresponding respectively is separated；And
Calculate mechanism, the calculating mechanism separated from the electric signal based on the Signal separator mechanism each described in set
Determine the twocomponent signal of frequency, calculate the optical characteristic value represented by the twocomponent signal,
The Signal separator mechanism possesses lock-in amplifier, and the lock-in amplifier detects the signal of CF and to the signal
It is amplified,
The frequency corresponding with the veiling glare sent from the electron beam or the plasma is removed by the lock-in amplifier,
And it is configured to and the setpoint frequency identical centre frequency,
The species number of the setpoint frequency can be set at least more than 2 any amount,
By the electric signal is input to the lock-in amplifier, the Signal separator mechanism extracts each described setting simultaneously
The twocomponent signal of frequency, the calculating mechanism execute the parsing twocomponent signal simultaneously corresponding to each described setpoint frequency
The process of the optical characteristic value is calculated, thus, while measuring special with the optics of the species number identical quantity
Property value.
3. measurement apparatus according to claim 1 and 2, it is characterised in that
Digital signal processor is additionally provided with the measurement apparatus, the digital signal processor is to from the detection signal
In the twocomponent signal of each setpoint frequency separated implement enhanced processing respectively,
Described calculate mechanism based on the enhanced processing after the twocomponent signal calculating the institute represented by the twocomponent signal
State optical characteristic value.
4. a kind of film formation device, the film formation device possess vacuum tank and evaporation mechanism, and base received by wherein described vacuum tank
Plate, the evaporation mechanism are deposited with deposition material to the substrate using electron beam or plasma in the vacuum tank,
The film formation device is characterised by,
The film formation device possesses the measurement apparatus described in any one in claims 1 to 3,
During forming film on the substrate in the vacuum tank, it is accommodated with the vacuum tank described tested
Amount substrate, the evaporation mechanism are also deposited with the deposition material to the measured use substrate,
During forming film on the substrate in the vacuum tank, the measurement apparatus are keeping the measured use
In the state of substrate reception is in the vacuum tank, for the film for being formed at the measured use substrate-side, while measurement
Multiple optical characteristic values including including blooming value.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2012/073097 WO2014038090A1 (en) | 2012-09-10 | 2012-09-10 | Measuring apparatus and film-forming apparatus |
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| CN104350380B true CN104350380B (en) | 2017-03-15 |
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|---|---|
| JP (1) | JP5367196B1 (en) |
| CN (1) | CN104350380B (en) |
| HK (1) | HK1202331A1 (en) |
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| WO (1) | WO2014038090A1 (en) |
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| CN107179053A (en) * | 2016-03-10 | 2017-09-19 | 中国科学院高能物理研究所 | Guiding device, the homogeneity test device of film and method |
| CN105714252B (en) * | 2016-04-28 | 2018-09-28 | 中国工程物理研究院激光聚变研究中心 | A kind of optical thin film deposition scan control method and system |
| US11067446B2 (en) * | 2017-06-22 | 2021-07-20 | Ams Sensors Singapore Pte. Ltd. | Compact spectrometer modules |
| JP2019144217A (en) * | 2018-02-20 | 2019-08-29 | 国立大学法人千葉大学 | Film thickness measurement device, vapor deposition apparatus using the same and film characteristic evaluation device |
| CN109811323B (en) * | 2019-01-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Magnetron sputtering device and tray detection method |
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| CN102472611A (en) * | 2009-07-03 | 2012-05-23 | 株式会社新柯隆 | Optical film thickness meter and thin film forming apparatus provided with optical film thickness meter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2014038090A1 (en) | 2016-08-08 |
| CN104350380A (en) | 2015-02-11 |
| TW201411090A (en) | 2014-03-16 |
| TWI502164B (en) | 2015-10-01 |
| WO2014038090A1 (en) | 2014-03-13 |
| JP5367196B1 (en) | 2013-12-11 |
| HK1202331A1 (en) | 2015-09-25 |
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