CN104347495A - Method for preparing self-aligned nickel silicide - Google Patents
Method for preparing self-aligned nickel silicide Download PDFInfo
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- CN104347495A CN104347495A CN201410491170.4A CN201410491170A CN104347495A CN 104347495 A CN104347495 A CN 104347495A CN 201410491170 A CN201410491170 A CN 201410491170A CN 104347495 A CN104347495 A CN 104347495A
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- Prior art keywords
- nickel
- temperature
- preparation
- autoregistration
- annealing process
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- 238000000034 method Methods 0.000 title claims abstract description 76
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title abstract description 8
- 229910021334 nickel silicide Inorganic materials 0.000 title abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000137 annealing Methods 0.000 claims abstract description 40
- 239000011261 inert gas Substances 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 17
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 13
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 67
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 35
- 238000002360 preparation method Methods 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000004151 rapid thermal annealing Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 claims description 6
- 210000004483 pasc Anatomy 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000012421 spiking Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a method for preparing self-aligned nickel silicide, which at least comprises the following steps of precleaning exposed a silicon surface to remove native oxides; depositing nickel or nickel alloy on the cleaned silicon surface; performing the low-temperature fast thermal annealing treatment at a first temperature under a specific gas atmosphere (pure inert gases with a flow rate of 0-5 slm), and enabling part of the nickel or the nickel alloy to react with silicon so as to form a high-resistance silicon nickel compound; removing the unreacted nickel or nickel alloy; performing the high-temperature fast thermal annealing treatment at a second temperature under the specific gas atmosphere (pure inert gases with a flow rate of 0-5 slm), and converting the high-resistance silicon nickel compound into a low-resistance silicon nickel compound. According to the method for preparing the self-aligned nickel silicide, the flow rate of the inert gases in the fast thermal annealing treatment is reduced, so that the content of oxidized impurities in the inert gases is reduced, the production quality of nickel silicide is improved, the probability of generating spiking defects and piping defects due to the fact that nickel atoms diffuse along the defects is reduced by means of reducing the pressure in a chamber body, and meanwhile the production cost is lowered.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor, particularly relate to a kind of preparation method of autoregistration nickle silicide.
Background technology
Along with the continuous lifting of process for fabrication of semiconductor device level, current main flow silicon chip manufacturing dimension reaches 300mm, and mainstream technology node also enters 45 nanometer processing procedures, and strides forward towards 28/20 more advanced nanometer processing procedure.
In 45 nanometers and following processing procedure, nickel silicide has replaced the standard contact material that traditional Titanium silicide and cobalt silicide become source/drain/gate contact hole.Compared to conventional salicide, nickel silicide has the advantages such as low resistance, low stress and low silicon material loss.But the disadvantage of nickel silicide is growth, and thermal stability is poor, this just proposes very high requirement to each process procedure in whole growth course, once process environments does not reach requirement, nickel silicide is easy to produce pipeline (piping) defect and reunion (agglomeration) defect, these defects will cause transistor internal to produce electric leakage, have a strong impact on device performance.
Fig. 1 is preparation method's process chart of the nickle silicide of prior art.As shown in the figure, the technique of the formation nickle silicide of prior art generally includes following steps: S10, carries out prerinse to the silicon face exposed, removing natural oxide; S12, nickel deposited or nickel alloy on silicon face after cleaning; S14, carries out low-temperature rapid thermal annealing in process at the first temperature (such as, about 330 DEG C) and specific gas atmosphere (such as, nitrogen flow is generally 10-20slm), makes part of nickel or nickel alloy and pasc reaction, forms high resistance tantnickel compound; S16, removes unreacted nickel or nickel alloy; S18, in the second temperature (such as, about 500 DEG C) and specific gas atmosphere, (such as, nitrogen flow is generally 10-20
slm) carry out high-temperature quick thermal annealing process under, make described high resistance tantnickel compound be converted into low-resistance silicon nickel compound (i.e. nickle silicide).
In other words, nickel suicide technological process comprises double annealing process and a step nickel metal-stripping.
First step annealing process mainly makes metallic nickel and pasc reaction form Ni
2si, this Ni
2in Si compound, nickle atom number is silicon atom twice, and compare the final NiSi formed, this Ni
2nickle atom in Si compound is in state more than needed, and nickle atom more than needed is easy to diffuse to form defect of pipeline along defect.Therefore, first step annealing process is the key controlling defect of pipeline.
In general the technological temperature of first step annealing in process is in 270 DEG C to 330 DEG C narrow and small interval ranges, and the too high heat budget that easily causes of temperature is inadequate, and excessive temperature also can accelerate the diffusion of nickle atom thus cause defect of pipeline to increase.On the other hand, if temperature is too low, can cause nickel and pasc reaction insufficient.
In addition, the annealing in process forming nickle silicide must be carried out in the atmosphere of inert gases not having oxygen completely, as long as have more than 10ppm oxidation impurities (such as in annealing in process, H2O or O2) existence all can cause expose silicon face generation oxidation reaction, these oxidation reactions and silicidation reaction are vied each other and are hindered the generation of nickle silicide.In annealing in process, the flow of inert gas is larger, wherein the content of oxidation impurities is higher, pressure in cavity is larger, the possibility that nickle atom produces spike (spiking) defect and pipeline (piping) defect along defect diffusion is larger, not only affect generation and the quality of nickle silicide, also add production cost.
Summary of the invention
The technical problem to be solved in the present invention is the preparation method providing a kind of autoregistration nickle silicide, it is by reducing the flow of the inert gas in quick thermal annealing process, both the content of oxidation impurities in inert gas had been reduced, improve the generation quality of nickle silicide, reduce nickle atom by pressure in reduction cavity again and spread the possibility producing spike (spiking) defect and pipeline (piping) defect along defect, reduce production cost simultaneously.
The invention provides a kind of preparation method of autoregistration nickle silicide, the preparation method of described autoregistration nickle silicide at least comprises the following steps: step 1, carries out prerinse to the silicon face exposed, removing natural oxide; Step 2, nickel deposited or nickel alloy on silicon face after cleaning; Step 3, carries out low-temperature rapid thermal annealing in process at the first temperature and specific gas atmosphere, makes part of nickel or nickel alloy and pasc reaction, forms high resistance tantnickel compound; Step 4, removes unreacted nickel or nickel alloy; Step 5, carries out high-temperature quick thermal annealing process at the second temperature and specific gas atmosphere, makes described high resistance tantnickel compound be converted into low-resistance silicon nickel compound; Wherein, the atmosphere of the low-temperature rapid thermal annealing in process in described step 3 is pure inert gas, and flow is between 0 to 5slm; The atmosphere of the high-temperature quick thermal annealing process in described step 5 is pure inert gas, and gas flow is between 0 to 5slm.
Compared with prior art, the preparation method of autoregistration nickle silicide of the present invention is by reducing the flow of inert gas in quick thermal annealing process, both the content of oxidation impurities in inert gas had been reduced, improve the generation quality of nickle silicide, reduce nickle atom by pressure in reduction cavity again and spread the possibility producing spike defect and defect of pipeline along defect, reduce production cost simultaneously.
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is described in detail, to make characteristic of the present invention and advantage more obvious.
Accompanying drawing explanation
Figure 1 shows that the process chart of the preparation method of the nickle silicide of prior art;
Figure 2 shows that the process chart of the preparation method of the autoregistration nickle silicide of one embodiment of the invention;
Figure 3 shows that the experimental result schematic diagram that in the technological process of the preparation method of nickle silicide, gas flow affects spike defect; And
Figure 4 shows that the experimental result schematic diagram that in the technological process of the preparation method of nickle silicide, gas flow affects defect of pipeline.
Embodiment
Below will provide detailed description to embodiments of the invention.Although the present invention will carry out setting forth and illustrating in conjunction with some embodiments, it should be noted that the present invention is not merely confined to these execution modes.On the contrary, the amendment carry out the present invention or equivalent replacement, all should be encompassed in the middle of right of the present invention.
In addition, in order to better the present invention is described, in embodiment hereafter, give numerous details.It will be understood by those skilled in the art that do not have these details, the present invention can implement equally.In other example, known method, flow process, element and circuit are not described in detail, so that highlight purport of the present invention.
It is the process chart of the preparation method of autoregistration nickle silicide of the present invention shown in Fig. 2.As shown in the figure, the preparation method of autoregistration nickle silicide of the present invention at least comprises the following steps: S20, carries out prerinse to the silicon face exposed, removing natural oxide; S22, nickel deposited or nickel alloy on silicon face after cleaning; S24, in the first temperature (such as, between 220 DEG C to 350 DEG C, be preferably 300 DEG C) and specific gas atmosphere is (such as, pure inert gas and flow are between 0 to 5slm) under carry out low-temperature rapid thermal annealing in process, make part of nickel or nickel alloy and pasc reaction, form high resistance tantnickel compound; S26, removes unreacted nickel or nickel alloy; S28, in the second temperature (such as, between 400 DEG C to 550 DEG C, be preferably 480 DEG C) and specific gas atmosphere is (such as, pure inert gas and flow are between 0 to 5slm) under carry out high-temperature quick thermal annealing process, make described high resistance tantnickel compound be converted into low-resistance silicon nickel compound (i.e. nickle silicide).
In one embodiment, the low-temperature rapid thermal annealing in process in described step S24 comprises insulation annealing process and spike annealing process further.Wherein, the process time of described insulation annealing process was between 5 to 60 seconds; The process time of described spike annealing process is 0 second, and the technological temperature of this spike annealing process arrived T-50 DEG C before highest temperature T DEG C with time experienced of T-50 afterwards DEG C between 5 to 15 seconds.
In one embodiment, the low-temperature rapid thermal annealing in process in described step S24 comprises insulation annealing process and spike annealing process further.Wherein, the process time of described insulation annealing process was between 5 to 60 seconds; The process time of described spike annealing process is 0 second, and the technological temperature of this spike annealing process arrived T-50 DEG C before highest temperature T DEG C with time experienced of T-50 afterwards DEG C between 5 to 15 seconds.
Refer to Fig. 3, which show in the technological process of the preparation method of nickle silicide, the experimental result schematic diagram that gas flow affects spike defect; Meanwhile, refer to Fig. 4, which show in the technological process of the preparation method of nickle silicide, the experimental result schematic diagram that gas flow affects defect of pipeline.As seen from the figure, experimental result shows, after a small amount of nitrogen quick thermal annealing process, spike defect can reduce 75.1%, and defect of pipeline can reduce 82.5%, and inert gas consumption can reduce 50-75%.
Embodiment and accompanying drawing are only the conventional embodiment of the present invention above.Obviously, various supplement, amendment and replacement can be had under the prerequisite not departing from the present invention's spirit that claims define and invention scope.It should be appreciated by those skilled in the art that the present invention can change in form, structure, layout, ratio, material, element, assembly and other side under the prerequisite not deviating from invention criterion according to concrete environment and job requirement in actual applications to some extent.Therefore, be only illustrative rather than definitive thereof in the embodiment of this disclosure, the scope of the present invention is defined by appended claim and legal equivalents thereof, and is not limited thereto front description.
Claims (10)
1. a preparation method for autoregistration nickle silicide, the preparation method of described autoregistration nickle silicide at least comprises the following steps:
Step 1, carries out prerinse to the silicon face exposed, removing natural oxide;
Step 2, nickel deposited or nickel alloy on silicon face after cleaning;
Step 3, carries out low-temperature rapid thermal annealing in process at the first temperature and specific gas atmosphere, makes part of nickel or nickel alloy and pasc reaction, forms high resistance tantnickel compound;
Step 4, removes unreacted nickel or nickel alloy;
Step 5, carries out high-temperature quick thermal annealing process at the second temperature and specific gas atmosphere, makes described high resistance tantnickel compound be converted into low-resistance silicon nickel compound;
It is characterized in that, the atmosphere of the low-temperature rapid thermal annealing in process in described step 3 is pure inert gas, and flow is between 0 to 5slm; The atmosphere of the high-temperature quick thermal annealing process in described step 5 is pure inert gas, and gas flow is between 0 to 5slm.
2. the preparation method of autoregistration nickle silicide according to claim 1, is characterized in that, described first temperature in described step 3 is between 220 DEG C to 350 DEG C.
3. the preparation method of autoregistration nickle silicide according to claim 1, is characterized in that, the low-temperature rapid thermal annealing in process in described step 3 comprises insulation annealing process and spike annealing process further.
4. the preparation method of autoregistration nickle silicide according to claim 3, is characterized in that, the process time of described insulation annealing process was between 5 to 60 seconds.
5. the preparation method of autoregistration nickle silicide according to claim 3, it is characterized in that, the process time of described spike annealing process is 0 second, and the technological temperature of this spike annealing process arrived T-50 DEG C before highest temperature T DEG C with time experienced of T-50 afterwards DEG C between 5 to 15 seconds.
6. the preparation method of autoregistration nickle silicide according to claim 1, is characterized in that, described second temperature in described step 5 is between 400 DEG C to 550 DEG C.
7. the preparation method of autoregistration nickle silicide according to claim 1, is characterized in that, the high-temperature quick thermal annealing process in described step 5 comprises insulation annealing process and spike annealing process further.
8. the preparation method of autoregistration nickle silicide according to claim 7, is characterized in that, the process time of described insulation annealing process was between 5 to 60 seconds.
9. the preparation method of autoregistration nickle silicide according to claim 7, it is characterized in that, the process time of described spike annealing process is 0 second, and the technological temperature of this spike annealing process arrived T-50 DEG C before highest temperature T DEG C with time experienced of T-50 afterwards DEG C between 5 to 15 seconds.
10. the preparation method of autoregistration nickle silicide according to claim 1, is characterized in that, described pure inert gas is nitrogen, argon gas or the mixture of the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410491170.4A CN104347495A (en) | 2014-09-23 | 2014-09-23 | Method for preparing self-aligned nickel silicide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410491170.4A CN104347495A (en) | 2014-09-23 | 2014-09-23 | Method for preparing self-aligned nickel silicide |
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| CN104347495A true CN104347495A (en) | 2015-02-11 |
Family
ID=52502824
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410491170.4A Pending CN104347495A (en) | 2014-09-23 | 2014-09-23 | Method for preparing self-aligned nickel silicide |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778251A (en) * | 2019-03-29 | 2019-05-21 | 中国科学院上海应用物理研究所 | A kind of preparation method of composite coating structure and thus obtained composite coating structure |
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|---|---|---|---|---|
| US6251779B1 (en) * | 2000-06-01 | 2001-06-26 | United Microelectronics Corp. | Method of forming a self-aligned silicide on a semiconductor wafer |
| CN101494167A (en) * | 2008-01-25 | 2009-07-29 | 株式会社瑞萨科技 | Method of manufacturing a semiconductor device |
| CN102117744A (en) * | 2010-01-05 | 2011-07-06 | 无锡华润上华半导体有限公司 | Method for forming self-aligned metallic silicide |
| CN102446730A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for forming nickel silicide by microwave annealing |
| CN104078344A (en) * | 2014-07-11 | 2014-10-01 | 上海华力微电子有限公司 | Method for overcoming spiking defect and piping defect of self-aligned nickel silicide |
-
2014
- 2014-09-23 CN CN201410491170.4A patent/CN104347495A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251779B1 (en) * | 2000-06-01 | 2001-06-26 | United Microelectronics Corp. | Method of forming a self-aligned silicide on a semiconductor wafer |
| CN101494167A (en) * | 2008-01-25 | 2009-07-29 | 株式会社瑞萨科技 | Method of manufacturing a semiconductor device |
| CN102117744A (en) * | 2010-01-05 | 2011-07-06 | 无锡华润上华半导体有限公司 | Method for forming self-aligned metallic silicide |
| CN102446730A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for forming nickel silicide by microwave annealing |
| CN104078344A (en) * | 2014-07-11 | 2014-10-01 | 上海华力微电子有限公司 | Method for overcoming spiking defect and piping defect of self-aligned nickel silicide |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778251A (en) * | 2019-03-29 | 2019-05-21 | 中国科学院上海应用物理研究所 | A kind of preparation method of composite coating structure and thus obtained composite coating structure |
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Application publication date: 20150211 |