CN104282844B - Organic light emitting structure, manufacturing method thereof and organic light emitting assembly - Google Patents
Organic light emitting structure, manufacturing method thereof and organic light emitting assembly Download PDFInfo
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- CN104282844B CN104282844B CN201310285545.7A CN201310285545A CN104282844B CN 104282844 B CN104282844 B CN 104282844B CN 201310285545 A CN201310285545 A CN 201310285545A CN 104282844 B CN104282844 B CN 104282844B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light emitting structure and a manufacturing method of the organic light emitting structure. The manufacturing method includes the steps that a flat layer is formed on a base plate, wherein the flat layer comprises a negative photoresist material; the exposure technology is carried out on the negative photoresist material through a mask; the development technology is carried out on the negative photoresist material on which the exposure technology is carried out, so that a photoresist pattern is obtained, wherein the photoresist pattern comprises a flat part and a protruding part located on the periphery of the flat part, and the protruding part is provided with a smooth surface; reflecting electrodes and an organic light emitting layer are formed on the flat part, wherein the reflecting electrodes are located on the surfaces of the opposite sides of the protruding part. The organic light emitting structure can effectively gather light rays emitted by an OLED, the light emitting efficiency of the OLED is improved within the same pixel area, and various pixel light emitting sources are protected against color mixing.
Description
Technical field
The present invention relates to OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) luminescence technology,
And particularly to a kind of organic light-emitting structure and its manufacture method and organic luminescent assembly.
Background technology
OLED is self luminous Display Technique, at present OLED upper luminous (Top emission), need to be above data wire
Increase by an organic planarization layer, make OLED structure keep thickness homogeneous in subsequent technique, it is bright that the uneven thickness of minimizing causes
Degree difference.
Current oled panel need to design circuit compensation and drive TFT (Thin Film Transistor, thin film field-effect crystalline substance
Body pipe) threshold voltage, add the demand of the high PPI of OLED (Pixel Per Inch), the aperture opening ratio of OLED can be affected, reduce
The actual light-emitting area of OLED, causes brightness to reduce indirectly.Therefore how to have in limited elemental area, increase the luminous of OLED
Brightness, is the problem that existing OLED design faces and need to solve immediately.
OLED ray structure of the prior art is shown in Figure 1.Anode in this OLED ray structure has a reflection
Layer, for reflecting to the light that organic luminous layer produces.This light produced by OLED ray structure as shown in figure 1, because
Partial transmitting light scattering, it is easy to adjacent pixel light source produces colour mixture, causes colourity impure and angle of squint colour cast.And some light
The light of line such as nearly horizontal direction does not project from effective light-emitting zone and direction, causes the entirety of this OLED ray structure to send out
Light efficiency is not high.
Content of the invention
In view of the problems referred to above of prior art, the invention provides a kind of organic light-emitting structure and its manufacture method and organic
Luminescence component.
The invention discloses a kind of method manufacturing organic light-emitting structure, including：
Planarization layer is formed on substrate, described planarization layer includes negative photoresist material；
Using mask, exposure technology is executed to described negative photoresist material；
To the described negative photoresist material execution developing process after exposure technology, thus obtaining photoresist
Agent pattern, the lug boss that wherein said photoresist pattern includes flat part and is located at flat part surrounding, described lug boss tool
There is smooth surface；And
Reflecting electrode and organic luminous layer are formed on described flat part, wherein said reflecting electrode is also located at described projection
On the opposite flank in portion.
Wherein, this mask includes：Photic zone and semi-permeable layer；Wherein, the region only being covered by this photic zone is this lug boss,
The region simultaneously being covered by photic zone and semi-permeable layer is this flat part.
Wherein, this mask also includes light shielding layer.
Wherein, the region that this light shielding layer covers is the edge of this organic layer.
Wherein, the region that this light shielding layer covers is that on this organic layer, data wire is connected with the anode of Organic Light Emitting Diode
Region, and/or the region that coated glass material is needed on this organic layer.
Wherein, using physical vapour deposition (PVD) or chemical vapor deposition method by this this reflecting electrode be made in this flat part and
On lug boss.
Wherein, the slope angle of jut is 25 degree to 50 degree.
Wherein, this mask is grayscale mask.
Wherein, this mask is intermediate tone mask.
Wherein, this mask is half-tone phase shift mask.
The invention also discloses a kind of organic light-emitting structure, at least include：Organic layer and be located at organic layer on organic
Optical diode module；
The lug boss that this organic layer includes flat part and is located at flat part surrounding；
Reflecting electrode and organic luminous layer are formed with described flat part, wherein said reflecting electrode is also located at described convex
On the opposite flank in the portion of rising.
Wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
Wherein, this reflecting electrode is made using the metals such as Al, Ag or Ni or its alloy and smooth is had high reflection performance
Plane.
The invention also discloses a kind of organic luminescent assembly, including：Organic layer and the organic light emission two being located on organic layer
Pole pipe module；
The lug boss that this organic layer includes flat part and is located at flat part surrounding；
Reflecting electrode and organic luminous layer are formed with described flat part, wherein said reflecting electrode is also located at described convex
On the opposite flank in the portion of rising.
Wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
The organic luminescent device of the present invention, the light that OLED can be sent carries out in active set, in identical elemental area
Interior, in the case of need not increasing cost and technique, increased the luminous efficiency of OLED, it also avoid each pixel light emission source simultaneously
Between produce colour mixture.
Brief description
Fig. 1 is the schematic diagram of the OLED ray structure of prior art.
Fig. 2 is the schematic diagram of the organic light-emitting structure of one embodiment of the invention.
Fig. 3 is the schematic diagram of the making organic layer 1 of one embodiment of the invention.
Fig. 4 is the schematic diagram of the OLED assembly of one embodiment of the invention.
Fig. 5 is the photo of the gradual sloped portion 12 of one embodiment of the invention.
Specific embodiment
It is described more fully with example embodiment referring now to accompanying drawing.However, example embodiment can be with multiple shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment comprehensively convey to those skilled in the art.In in figure, in order to clear
Clear, exaggerate the thickness of region and layer.Represent same or similar structure in figure identical reference, thus will be omitted it
Detailed description.
Additionally, described feature, structure or characteristic can combine in one or more enforcements in any suitable manner
In example.In the following description, many details are provided thus providing fully understanding of embodiment of this disclosure.However,
It will be appreciated by persons skilled in the art that the technical scheme of the disclosure can be put into practice without one of described specific detail or more
Many, or other methods, constituent element, material etc. can be adopted.In other cases, be not shown in detail or describe known features,
Material or operation are to avoid each side of the fuzzy disclosure.
Embodiments provide a kind of organic luminescent device of high-luminous-efficiency and its manufacture method, referring to Fig. 2 institute
It is shown as the sectional elevation of this organic luminescent device, its longitudinal section (not shown) is similar with sectional elevation, and it at least includes organic
Layer 1 and OLED module 2.This OLED module 2 at least includes a reflecting layer 21, additionally, OLED module 2 its also include luminescent layer, cloudy
Pole layer, anode layer etc.；This organic layer 1 is looped around around this OLED module 2, and upper end open, forms the shape of surrounding projection；
This organic layer 1 includes a luminous zone 11 (flat part) and a gradual sloped portion 12 (jut), and this luminous zone 11 is located at organic layer 1
Zone line, the luminous of OLED module 2 is placed on this luminous zone 11；Gradual sloped portion 12 is centered around the left in front and back of this luminous zone 11
Right four sides.The value of slope angle θ of gradual sloped portion 12 can be between 25 degree to 50 degree.Reflecting layer 21 is arranged at organic layer
On 1 luminous zone 11 and gradual sloped portion 12, reflecting layer (as reflecting electrode) and organic luminous layer are formed with luminous zone 11, its
In this reflecting layer be also located on the relative side surface of gradual sloped portion 12.As shown in Fig. 2 the base section 21a in reflecting layer 21 sets
On the luminous zone 11 of organic layer 1, peripheral part 21b in reflecting layer 21 sets according to this gradual sloped portion 12, forms an inclined plane, makes
Obtain reflecting layer 21 and form concave structure in organic layer 1.
As shown in Fig. 2 the light that OLED module 2 sends, reflected through the reflecting layer 21 of bottom and surrounding, can be effective
Concentrate scattered light, increase light source utilization rate, and be also avoided that the light sending dissipates to surrounding pixel light source, it is to avoid with adjacent
Pixel light source produces colour mixture.
The manufacture craft of the organic luminescent device of the embodiment of the present invention includes：
1 as shown in figure 3, cover a mask 3 above the organic layer 1 ' (or planarization layer) of negative photoresist material.
(label 1 ' in Fig. 3 represents the organic layer processing without photoetch, and label 1 represents organic after photoetch is processed
Layer).Mask 3 can cover organic layer 1 ', and it includes photic zone 31, semi-permeable layer 32 and light shielding layer 33.On organic layer 1, by light
The region that screen layer 33 covers is the edge of organic layer 1 ', and the region only being covered by photic zone 31 corresponds to the area on gentle slope to be formed
Domain, other regions are covered by photic zone 31 and semi-permeable layer 32 simultaneously.In the present embodiment, this mask 3 can be grayscale mask, half color
Adjust mask or half-tone phase shift mask.
Understand that in conjunction with Fig. 3 and above-mentioned introduction 33 times formation light shield area A3 of light shielding layer are only covered by photic zone 31
Region forms transparent area A1, and the region under photic zone 31 and semi-permeable layer 32 is semi-opaque region A2 simultaneously.
2nd, carry out illumination above mask 3, then the negative photoresist under transparent area A1 will crosslink after exposure
Reaction, becomes the cross-linked polymer of the higher molecular weight that can not be dissolved by the developing；And the negativity under the A2 of semi-opaque region is photic
Resist crosslinks the negative photoresist that the intensity of reaction is less than under transparent area A1, for the negativity under light shield area A3
Photoresist does not crosslink reaction substantially.
3rd, use this organic layer 1 of developing solution dissolution, the negative photoresist under transparent area A1 only has few fractional part quilt
Dissolving, forms gradual sloped portion 12, and the negative photoresist under the A2 of semi-opaque region is more is partly dissolved, formed be thinner than original
The flat of machine thickness degree；And the substantially all meeting of negative photoresist under light shield area A3 is dissolved.Wherein, originally
Case shown in only by Fig. 3 needing remove organic layer 1 ' edge as a example illustrate, this case does not limit organic layer 1 ' edge
Negative photoresist needs to remove.Need on this organic layer 1 ' remove part according to specific needs depending on, if desired for removal
The region that can also connect with anode for data wire in pixel of part, or the region needing coated glass material.For need
Region to be removed is so as to top is covered by light shielding layer 33.
By above-mentioned manufacture craft, just can be formed, as shown in Fig. 3 bottom, there is luminous zone 11 and gradual sloped portion 12
Organic layer 1.
4th, after producing above-mentioned organic layer 1, by reflecting layer 21 according to luminous zone 11 and the gradual sloped portion 12 of organic layer 1
Setting, forms the organic light-emitting structure shown in Fig. 2.
This reflecting layer 21 can utilize PVD (Physical Vapor Deposition, physical vapour deposition (PVD)) or CVD
The technique of (Chemical Vapor Deposition, chemical vapor deposition), is made in this luminous zone 11 and gradual sloped portion 12
On.
Wherein, this reflecting layer 21 may be located in the anode of OLED, and such as this reflecting layer 21 can be the tool in anode layer
There is the metal level of high reflecting rate.This metal level can be made using the metals such as Al, Ag or Ni or its alloy smooth has high reflection
The plane of performance.
In addition it is also possible to be only that base section 21a in reflecting layer 21 is located in anode, and peripheral part 21b is one only
Vertical structure, that is, in the surrounding of anode layer, independent setting has the plane of the high reflection performance light to send to OLED module
Reflected.But this kind of mode need to increase light shield quantity and production process, can be depending on real needs using which kind of structure.
Anode layer is included to the OLED module in reflecting layer 21, its cathode layer is hyaline layer, cathode layer and anode layer it
Between press from both sides organic luminous layer, formed as sandwich structure.Between cathode layer and anode layer when supplying power to appropriate voltage,
Positron-electron meets in this organic luminous layer, will emit beam, after the reflection through anode reflecting layer for the light being sent from
Negative electrode hyaline layer transmission and go out.
The example embodiment of OLED assembly as shown in Figure 4, in the present embodiment, the transistor T for OLED assembly is permissible
It is arranged on the lower section in anode reflecting layer.
The above embodiment of the present invention includes reflecting layer 21 with anode layer, and cathode layer illustrates for as a example hyaline layer.This
Outward, those skilled in the art be it is also recognized that this OLED module can also include the OLED in reflecting layer 21 for cathode layer, this
When, cathode layer is arranged on organic layer, is organic luminous layer and anode layer, anode layer is transparent structure, has on cathode layer
Machine luminescent layer is located between negative electrode and anode.It should be noted that making the OLED module of this kind of structure, need to increase light shield
Quantity and the technique of correlation, the otherwise OLED module 2 with concave structure shown in more difficult formation Fig. 2.Therefore, using cathode layer
Including the OLED module 2 in reflecting layer 21, need the extra manufacture craft considering correlation and cost.
Understand, in this OLED module 2, the base section 21a in reflecting layer 21 is common with peripheral part 21b in conjunction with above-mentioned introduction
Constitute the output optical zone of this OLED module 2, the light that OLED module 2 sends all projects from this output optical zone.
In this organic light-emitting structure, according to specific application demand, the gradient of gradual sloped portion 12 can be adjusted.Tool
Body, adjust the gradient on gentle slope, need the correlative factor considering to include light exposure (including light energy, spacing and time), show
The material of the etching intensity (including developer solution species, etching period) of shadow liquid and organic layer and thickness, consider above-mentioned three kinds
Factor, carries out optimized collocation and just gentle slope can be made the expected gradient.
As intensity of illumination is stronger, then the light energy of semi-opaque region A2 is also bigger, its produce cross-linking reaction accordingly more by force,
After developing solution dissolution, the thickness that semi-opaque region A2 reduces is less, and the height on the relative gentle slope of formation is relatively low, then gentle slope
The gradient is accordingly relatively low；In the same manner, reduce intensity of illumination, then the gradient on gentle slope can be made accordingly to increase.Additionally, developer solution etching intensity and
The material of organic layer, all can affect the etching degree of semi-opaque region A2, and finally affects the gradient on gentle slope, therefore needs to consider
Three kinds of factors, so that after organic layer is etched processing, the gradient on gentle slope can be consistent with expection.
The height adjusting gradual sloped portion 12 can adjust the transmitting light from side surface degree of OLED module 2；And adjust gradual sloped portion 12
The gradient just can adjust offside reflection layer in the angle of bottom reflection layer, thus adjusts the gradient of output optical zone.
As shown in figure 5, in the present case, the inclined degree of gradual sloped portion 12 is less, and the gradient is more slow, and the shape on gentle slope is more approximate
For arc；Inclined degree is bigger, and the gradient is steeper, and the shape on gentle slope is more approximately the plane of inclination, the gradual sloped portion 12 in this case
The gradient refer to the ratio of domatic vertical height and horizontal range, the as tangent value of the slope angle of gradual sloped portion 12.
It is the reflection efficiency improving reflecting layer 21 in this case, this reflecting layer 21 suitable design becomes opening as shown in Figure 2
Round table-like structure alternatively it is conceivable to, reflecting layer 21 can also be designed to it according to the specific performance of OLED module 2 by this case
His shape.
The organic luminescent device of the present invention, the light that OLED can be sent carries out in active set, in identical elemental area
Interior, in the case of need not increasing cost and technique, increased the luminous efficiency of OLED, it also avoid each pixel light emission source simultaneously
Between produce colour mixture.
Artisan will appreciate that without departing from the present invention's disclosed in appended claims of the invention
The change made in the case of scope and spirit and retouching, all belong within the scope of the claims of the present invention.
Claims (9)
1. a kind of method manufacturing organic light-emitting structure, including：
Planarization layer is formed on substrate, described planarization layer includes negative photoresist material；
Using mask, exposure technology is executed to described negative photoresist material；
To the described negative photoresist material execution developing process after exposure technology, thus obtaining photoresist figure
Case, the lug boss that wherein said photoresist pattern includes flat part and is located at flat part surrounding, described lug boss has flat
Sliding surface；And
Reflecting electrode and organic luminous layer are formed on described flat part, wherein said reflecting electrode is also located at described lug boss
On relative side surface,
Wherein, this mask includes：Photic zone and semi-permeable layer；Wherein, the region only being covered by this photic zone is described lug boss, with
When the region that covered by photic zone and semi-permeable layer be described flat part.
2. method according to claim 1, wherein, this mask also includes light shielding layer.
3. method according to claim 2, wherein, the region that this light shielding layer covers is the edge of this planarization layer.
4. method according to claim 2, wherein, this light shielding layer cover region be this planarization layer on data wire with
The region of coated glass material is needed on the region that the anode of Organic Light Emitting Diode connects, and/or this planarization layer.
5. this wherein, is reflected by method according to claim 1 using physical vapour deposition (PVD) or chemical vapor deposition method
Electrode fabrication is on this flat part and lug boss.
6. method according to claim 5, wherein, the slope angle of this lug boss is 25 degree to 50 degree.
7. method according to claim 1, wherein, this mask is grayscale mask.
8. method according to claim 1, wherein, this mask is intermediate tone mask.
9. method according to claim 1, wherein, this mask is half-tone phase shift mask.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310285545.7A CN104282844B (en) | 2013-07-08 | 2013-07-08 | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly |
| TW102137927A TW201503443A (en) | 2013-07-08 | 2013-10-21 | Organic light-emitting structure and method for manufacturing thereof, and organic light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310285545.7A CN104282844B (en) | 2013-07-08 | 2013-07-08 | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly |
Publications (2)
| Publication Number | Publication Date |
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| CN104282844A CN104282844A (en) | 2015-01-14 |
| CN104282844B true CN104282844B (en) | 2017-02-08 |
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| TW (1) | TW201503443A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102460417B1 (en) | 2014-10-24 | 2022-10-31 | 코닝 인코포레이티드 | Oleds with improved light extraction using enhanced guided mode coupling |
| US20160268554A1 (en) * | 2015-03-11 | 2016-09-15 | National Taiwan University | Electroluminescent devices with improved optical out-coupling efficiencies |
| CN106033800A (en) * | 2015-03-16 | 2016-10-19 | 上海和辉光电有限公司 | Organic light emitting structure, organic light emitting device possessing the structure and panel |
| CN104979375A (en) * | 2015-05-28 | 2015-10-14 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor and display device |
| WO2017176888A1 (en) | 2016-04-05 | 2017-10-12 | Corning Incorporated | Patterned organic light emitting diode (oled) with enhanced light extraction |
| CN105810719B (en) * | 2016-05-27 | 2019-08-06 | 京东方科技集团股份有限公司 | A kind of pixel unit and preparation method thereof, array substrate and display device |
| CN106681099B (en) * | 2016-12-20 | 2020-05-01 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN107863449A (en) * | 2017-10-26 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device, its preparation method and display device |
| CN108063154B (en) * | 2017-12-14 | 2020-04-10 | 安徽熙泰智能科技有限公司 | Silicon-based color OLED micro-display device and manufacturing method thereof |
| CN108172600B (en) * | 2017-12-29 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate for WOLED display and WOLED display |
| CN109473391A (en) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN111554727B (en) * | 2020-06-01 | 2023-11-07 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN113113550B (en) * | 2021-03-16 | 2023-01-10 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and OLED display device |
| CN113327971B (en) | 2021-06-30 | 2022-10-04 | 武汉华星光电半导体显示技术有限公司 | Display panel |
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| CN1450665A (en) * | 2002-04-09 | 2003-10-22 | 株式会社半导体能源研究所 | Semiconductor display device |
| CN1765156A (en) * | 2003-01-24 | 2006-04-26 | 株式会社半导体能源研究所 | Light-emitting device, method for manufacturing same and electric apparatus using such light-emitting device |
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| US7227306B2 (en) * | 2003-08-28 | 2007-06-05 | Samsung Sdi Co., Ltd. | Organic electroluminescence display having recessed electrode structure |
| KR20060133670A (en) * | 2005-06-21 | 2006-12-27 | 삼성전자주식회사 | Luminescence device and method of manufacturing thereof and display substrate having the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1450665A (en) * | 2002-04-09 | 2003-10-22 | 株式会社半导体能源研究所 | Semiconductor display device |
| CN1765156A (en) * | 2003-01-24 | 2006-04-26 | 株式会社半导体能源研究所 | Light-emitting device, method for manufacturing same and electric apparatus using such light-emitting device |
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Also Published As
| Publication number | Publication date |
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| CN104282844A (en) | 2015-01-14 |
| TW201503443A (en) | 2015-01-16 |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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