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CN104253055B - 焊接方法及半导体装置的制造方法 - Google Patents

焊接方法及半导体装置的制造方法 Download PDF

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CN104253055B
CN104253055B CN201410260650.XA CN201410260650A CN104253055B CN 104253055 B CN104253055 B CN 104253055B CN 201410260650 A CN201410260650 A CN 201410260650A CN 104253055 B CN104253055 B CN 104253055B
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nickel
semiconductor device
nickel coating
bottom plate
manufacture method
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CN104253055A (zh
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矶亚纪良
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract

本发明涉及焊接方法及半导体装置的制造方法。提供能降低空隙产生率的经由镍镀层的焊接方法及利用该焊接方法的半导体装置的制造方法。在惰性气体气氛中、在300℃～400℃的温度范围内预先对具有镍镀层(2)的铜底板(1)进行加热，从而能在将铜底板和绝缘电路基板(8)进行焊接时降低空隙产生率。

Description

焊接方法及半导体装置的制造方法
技术领域
本发明涉及焊接方法及使用该焊接方法的半导体装置的制造方法。
背景技术
图8是IGBT模块500的主要部分结构图。IGBT模块500包括：底板1；焊接在该底板1上的绝缘电路基板8；与绝缘电路基板8接合的半导体芯片9(IGBT芯片9a和二极管芯片9b)；粘接于底板1的带有外部引出端子14的树脂外壳框13；将半导体芯片9和外部引出端子14等相连接的接合线11；以及填充在树脂外壳框13内的密封材料15。绝缘电路基板8由陶瓷板5、背面侧的铜箔6以及表面侧的铜箔7来构成。
通常，底板1具有实施了镀镍的镍镀层2。然而，底板1的保管过程中大多数情况下在镍镀层2的表面上形成氧化金属膜即氧化镍膜21(参照图6)等。此外，如上所述，绝缘电路基板8由铜箔6-陶瓷板5-铜箔7来构成，铜箔6、7中有些实施了镀镍有些未实施镀镍。此外，底板1与绝缘电路基板8的铜箔6通过焊料12进行接合。
图9是IGBT模块500的示意性组装流程图。
准备镀镍后的底板1(A工序)。
接着，在还原性气体(氢气)中对镀镍后的底板1进行加热，对镍镀层2的表面的氧化镍膜21(氧化金属膜)进行还原使其成为镍膜。之后，进行湿法清洗(B工序)。
接着，在还原气氛中将底板1与绝缘电路基板8的铜箔6进行焊接(C工序)。
在上述C工序中，将底板1与绝缘电路基板8的铜箔6进行接合时，若接合面存在氧化金属膜，则焊料12的浸润性变差，焊料熔融时产生空隙23。此外，空隙23是导致IGBT模块500的品质和可靠性问题的原因之一，优选为空隙23较少。
现状是一般使用以下方法：如上所述，在还原性气体气氛中(还原性气体通常是氢气)对氧化金属膜即氧化镍膜21进行还原，使其成为镍膜并进行焊接。
此外，还有在焊接前对底板1实施加热的方法，但在该情况下，如上所述，在还原性气体气氛中实施加热较为普遍。
此外，在专利文献1中记载了以下内容：镍镀皮膜表面的氧化皮膜导致焊料浸润性变差，以及在含氢气的还原性气体气氛中进行焊接的情况下，存在下述那样装置变复杂、成本增加等缺点。
此外，在专利文献2中记载了以下内容：对镍镀膜充入氢(成为还原性气体气氛)、并且镍镀膜与熔融焊料接触时，镀膜中的氢进行热扩散，将覆盖在表面上的氧化膜的氧还原成水分子，无需利用助焊剂就能进行焊接。
此外，在专利文献3中记载了以下内容：预先使镍镀皮膜中含有氢，因焊接时的热量(220℃)而从金属内部产生的氢将表面的氧化皮膜还原，能进行良好的焊接。
现有技术文献
专利文献
专利文献1：日本专利特开平9-36299号公报
专利文献2：日本专利特开2002-4082号公报
专利文献3：日本专利特开平5-69122号公报
发明内容
发明所要解决的技术问题
然而，如上所述，在还原性气体气氛中利用焊料12的接合方法中，由于是在将底板1-焊料板10(参照图3(c))-绝缘电路基板8相重叠的状态下进行，因此，重叠有焊料板10的底板1的表面未能曝露在还原性气体气氛中，成为接合中最重要的接合面未被还原的状态。因此，接合面残留有氧化金属膜即氧化镍膜21，会产生空隙23。
此外，预先在还原性气体气氛中对底板1进行加热的情况下，如上述那样，作为还原性气体通常使用氢气。然而，氢气是可燃性气体，因此，需要对加热设备实施防爆对策等，加热设备和周边设备的成本增加。
此外，在专利文献1～3中对“在惰性气体气氛中将具有镍镀层的构件在规定温度下预先进行加热。利用通过该加热从镍镀层出来的氢将镍镀层表面的镍氧化膜进行还原并去除。之后，对构件进行焊接。”未作记载。
本发明的目的在于解决上述技术问题，提供一种焊接方法及利用该焊接方法的半导体装置的制造方法，该焊接方法使用不需要防爆对策的低成本的加热装置且能降低空隙产生率。
解决技术问题所采用的技术方案
为了达到上述目的，根据权利要求书的权利要求1所记载的发明，提供焊接方法，其包括以下工序：通过在300℃～400℃的温度范围内、在惰性气体气氛中对具有镍镀层的构件进行加热从而将所述镍镀层表面的氧化镍膜进行还原的工序；以及在还原气体气氛中将所述构件进行焊接的工序。
此外，根据权利要求书的权利要求2所记载的发明，在权利要求1所记载的发明中，可通过无电解镀覆处理来形成所述镍镀层。
此外，根据权利要求书的权利要求3所记载的发明，在权利要求1所记载的发明中，所述温度范围可为320℃～360℃。
此外，根据权利要求书的权利要求4所记载的发明，在权利要求1所记载的发明中，所述惰性气体可为氮气或氩气。
此外，根据权利要求书的权利要求5所记载的发明，提供半导体装置的制造方法，其包括以下工序：通过在300℃～400℃的温度范围内、在惰性气体气氛中对具有镍镀层的底板进行加热从而将所述镍镀层表面的氧化镍膜进行还原的工序；以及在还原气体气氛中将所述底板与绝缘电路基板的导电箔进行焊接的工序。
此外，根据权利要求书的权利要求6所记载的发明，在权利要求5所记载的发明中，可通过无电解镀覆处理来形成所述镍镀层。
此外，根据权利要求书的权利要求7所记载的发明，在权利要求5所记载的发明中，所述温度范围可为320℃～360℃。
此外，根据权利要求书的权利要求8所记载的发明，在权利要求5所记载的发明中，所述导电箔可具有镍镀层。
此外，根据权利要求书的权利要求9所记载的发明，在权利要求5所记载的发明中，所述惰性气体可为氮气或氩气。
此外，根据权利要求书的权利要求10所记载的发明，在权利要求5所记载的发明中，所述底板的材质可为铜、铝、AlSiC或MgSiC中的任一种。
此外，根据权利要求书的权利要求11所记载的发明，在权利要求5所记载的发明中，所述绝缘电路基板可具有在陶瓷板的两侧粘接有所述导电箔的结构。
此外，根据权利要求书的权利要求12所记载的发明，在权利要求5所记载的发明中，所述导电箔可为铜箔。
发明效果
根据本发明，预先在惰性气体气氛中、300℃～400℃的温度范围内将具有镍镀层的构件(底板)进行加热，从而能降低空隙产生率。
此外，由于在惰性气体气氛中对构件(底板)进行加热，因此对于加热装置不需要防爆对策，能使用低成本的加热装置。
附图说明
图1是对本发明所涉及的实施例1的焊接方法进行说明的组装流程图。
图2是本发明的实施例2所涉及的半导体装置100的主要部分工序剖视图。
图3是接着图2的、本发明的实施例2所涉及的半导体装置100的主要部分工序剖视图。
图4是接着图3的、本发明的实施例2所涉及的半导体装置100的主要部分工序剖视图。
图5是图2～图4所示半导体装置的制造方法中的、在惰性气体气氛中进行加热的示意性流程图。
图6是对去除镍镀层2上形成的镍氧化膜21的机制进行说明的图，(a)是表示在镍镀层2的内部存在氢22的情况的图，(b)是表示通过在惰性气体气氛中加热、来将氢22拉至镍氧化膜21而对镍氧化膜21进行还原的情况的图，(c)是表示镍氧化膜21被去除的情况的图。
图7是表示利用X射线图像调查空隙产生率的结果的图。
图8是IGBT模块500的主要部分结构图。
图9是IGBT模块500的示意性组装流程图。
具体实施方式
利用以下实施例来说明实施方式。另外，对与现有结构相同的部位标注相同的标号。
(实施例1)
图1是对本发明所涉及的实施例1的焊接方法进行说明的组装流程图。(1)准备镀镍后的铜构件(以下，简单称作构件)。有时，以铝构件、AlSiC(铝-碳化硅)构件或MgSiC(镁-碳化硅)构件等来替代铜构件。该镀镍例如是无电解镀覆，处理温度为80℃左右。利用该无电解的镀镍处理中，在镍镀层中含有氢。因此，无需特别从外部充进氢等还原性气体。之后，还准备被接合构件。
利用无电解镀覆来形成该镍镀层时，由于受到镀液中含有的还原剂的影响而产生氢气，其大部分被释放到外部。但是，该氢气的一部分作为氢原子进入到镍晶格中，使得镍镀层中含有氢。另外，虽然该镍镀层在构件的整个表面上形成，但此处作为说明仅示出了必要的焊接面。
例如，若从外部充进氢，则根据其充气条件，镍镀层的硬度降低，有时会在镍镀层中导入裂纹等缺陷，因此不优选。
(2)在惰性气体气氛(例如、氮气气氛等)中将镀镍后的构件在规定加热温度下进行加热，从而使镍镀层所含的氢移动到表面，使镍镀层表面成为还原气氛。由于该还原气氛，覆盖表面的氧化金属膜即氧化镍膜与氢发生反应，将氧化镍膜还原，使其成为镍膜。此外，通过在惰性气体气氛中进行加热，从而防止镍镀层的表面的氧化。此外，也可以将所示惰性气体气氛所使用的氮气替换成氩气等。
作为上述规定加热温度，优选为300℃～400℃的范围，进一步优选为320℃～380℃的范围。
加热温度低于300℃的情况下，镍镀层所含的氢被释放到外部的比例减小，氢量不足以形成还原气氛。此外，超过400℃的情况下，构件的镍镀层的硬度大大降低。而且，镍镀层的表面粗糙，焊接时成为空隙的产生源，因此不优选。
(3)隔着焊料板将构件以及与该构件接合的被接合构件紧贴，在还原性气体气氛中(例如、氢气气氛中等)进行加热以使焊料熔融，之后进行冷却使其固化，从而将彼此进行焊接。该焊接例如在200℃～300℃以下程度的温度范围内进行。
在本发明中，通过使用上述(2)项中说明的加热温度，能将镍镀层内的氢高效率地拉至表面，而且能抑制镍镀层表面变得粗糙，使表面成为还原气氛。其结果是，不仅能防止镍镀层表面变得粗糙，而且能高效地将镍镀层表面的氧化镍膜进行还原，从而能使空隙产生率在10％以下。
此外，在惰性气体气氛中对底板进行加热，因此，对加热设备不需要实施防爆对策等，加热设备和周边设备的成本不会变高。
(实施例2)
图2～图4是本发明的实施例2所涉及的半导体装置100的制造方法，是按照工序顺序示出的主要部分工序剖视图。
如图2(a)所示，准备具有镍镀层2的铜底板1(以下，简单称作底板)(图2(a))。镀镍的条件例如为无电解镀覆，镀覆温度为80℃左右。此外，镍镀层2的厚度例如为数百μm左右。有时，用对铝底板、AlSiC(铝-碳化硅)底板或MgSiC(镁-碳化硅)底板等实施了镀镍的底板，来替代上述实施了镀镍的铜底板1。另外，镍镀层2在底板的整个表面上形成，但在图中为了方便仅示出焊接面。之后，还准备具有导电性铜箔6的绝缘电路基板8。
接着，如图2(b)所示，在300℃～400℃(优选为320℃～380℃)的范围内、在惰性气体气氛(例如、氮气气氛等)中，例如利用恒温槽3对具有镍镀层2的底板1进行加热。通过这一加热，将镍镀层2的表面的氧化镍膜21(参照图6)还原，使其成为镍膜。此外，由于在惰性气体气氛中进行加热，因此，作为加热装置的恒温槽3不需要防爆对策。
接着，如图3(c)所示，在底板1与绝缘电路基板8的铜箔6之间夹着焊料板10，在还原性气体气氛(例如、氢气气氛等)中将焊料板10熔融、固化，从而将镍镀层2与铜箔6通过焊料12进行粘接(焊接)。例如使用200℃～300℃以下程度的温度范围的回流炉4等进行该焊接。另外，上述绝缘电路基板8例如具有在陶瓷板5的两侧粘接有铜箔6、7(或铝箔)的结构。此外，在一侧铜箔7上粘接有半导体芯片9，在另一侧铜箔6上焊接有上述底板1。此外，上述半导体芯片9彼此之间、半导体芯片9与铜箔7之间，通过接合线11进行连接。此外，在上述铜箔6、7上实施了镀镍。此时的镀镍的条件例如为无电解镀覆，镀覆温度为80℃左右。
接着，如图3(d)所示，利用粘接剂将底板1固定于具有外部引出端子14的树脂外壳框13，之后，利用接合线11将半导体芯片9和外部引出端子14进行连接。
接着，如图4(e)所示，利用密封材料15将树脂外壳框13内覆盖，完成半导体装置100。
如上所述，预先在惰性气体气氛中进行加热，将底板1上形成的镍镀层2的表面的氧化镍膜21还原，使其成为镍膜，从而能在之后的焊接中大幅抑制空隙的产生率。
此外，在惰性气体气氛中进行加热，因此，不需要对作为加热设备的恒温槽实施防爆对策等，能将加热设备和周边设备的成本降低。
图5是图2～图4所示半导体装置的制造方法中在惰性气体气氛中进行加热的示意性流程图。
在A工序中，准备具有镍镀层2的底板1。
接着，在B工序中，在惰性气体气氛中对底板1进行加热。
接着，在C工序中，将底板1的镍镀层2和绝缘电路基板8的由未图示镍镀层所覆盖的铜箔6在还原性气体气氛中进行焊接。
图6是对将形成于镍镀层2的氧化镍膜21还原使其成为镍膜的机制进行说明的图，图6(a)是表示镍镀层2的内部存在氢22的情况的图，图6(b)是表示通过在惰性气体气氛中进行加热、来将氢22拉至氧化镍膜21而将氧化镍膜21还原的情况的图，图6(c)是表示氧化镍膜21成为镍膜后的情况的图。
将加热温度设为320℃～380℃，且在惰性气体气氛中加热，从而使底板1的表面的镍镀膜2的内部所包含的氢22脱离。脱离的氢22起到还原性气体的作用，从而即使不使用还原性气体也能将底板1的表面的氧化金属膜即氧化镍膜21还原，产生水分。该水分会蒸发，从而使得镍氧化膜21成为镍膜。
图7是表示利用X射线图像调查了空隙产生率的结果的图。横轴是加热温度，纵轴是空隙产生率。该图表示预先在惰性气体气氛中将底板1加热之后将底板1与绝缘电路基板8焊接时的空隙产生率与加热温度之间的关系。通过对半导体芯片9正下方位置进行图像处理来计算出空隙产生率。对上述底板1实施镀镍，对绝缘电路基板8的铜箔6也实施镀镍。另外，在对上述铜箔6不实施镀镍的情况下，也能得到与上述大致相同的结果。
未在惰性气体气氛中进行加热的情况下，空隙产生率达到90％，与此不同地，通过将加热温度设为300℃～400℃的范围、并在惰性气体气氛(例如，氮气气氛中)中将底板1加热，之后利用焊料12将底板1与绝缘电路基板8接合，能将空隙产生率改善到10％以下。此外，通过将加热温度设为320℃～380℃，能使空隙产生率在3％以下。进一步地，若将加热温度设为340℃～360℃，能使空隙产生率在1％以下。
若上述加热温度超过360℃，则镍镀层2的硬度降低，镍镀层2的表面开始变得粗糙。因此，若超过400℃，则空隙产生率会超过10％，因此，为了上述那样使空隙产生率成为10％以下，需要将加热温度设为400℃以下。此外，优选设为380℃以下。
标号说明
1 底板
2 镍镀层
3 恒温槽
4 回流炉
5 陶瓷板
6、7 铜箔
8 绝缘电路基板
9 半导体芯片
9a IGBT芯片
9b 二极管芯片
10 焊料板
11 接合线
12 焊料
13 树脂外壳框
14 外部引出端子
15 密封材料
21 氧化镍膜
22 氢
23 空隙

Claims (12)

1.一种焊接方法，其特征在于，包括以下工序：
准备具有含氢的镍镀层的构件与被接合构件的工序；
通过在300℃～400℃的温度范围内、在惰性气体气氛中对所述构件进行加热从而将所述镍镀层表面的氧化镍膜进行还原的工序；以及
在还原气体气氛中，200℃～300℃以下的温度范围内将所述构件与所述被接合构件进行焊接的工序。
2.如权利要求1所述的焊接方法，其特征在于，
利用无电解镀覆处理来形成数百μm厚度的所述镍镀层。
3.如权利要求1所述的焊接方法，其特征在于，
将所述氧化镍膜进行还原的工序的所述温度范围为320℃～360℃。
4.如权利要求1所述的焊接方法，其特征在于，
所述惰性气体为氮气或氩气。
5.一种半导体装置的制造方法，其特征在于，包括以下工序：
准备具有含氢的镍镀层的底板和具有导电箔的绝缘电路基板的工序；
通过在300℃～400℃的温度范围内、在惰性气体气氛中对所述底板进行加热从而将所述镍镀层表面的氧化镍膜进行还原的工序；以及
在还原气体气氛中，200℃～300℃以下的温度范围内将所述底板与所述绝缘电路基板的导电箔进行焊接的工序。
6.如权利要求5所述的半导体装置的制造方法，其特征在于，
利用无电解镀覆处理来形成数百μm厚度的所述镍镀层。
7.如权利要求5所述的半导体装置的制造方法，其特征在于，
将所述氧化镍膜进行还原的工序的所述温度范围为320℃～360℃。
8.如权利要求5所述的半导体装置的制造方法，其特征在于，
所述导电箔具有镍镀层。
9.如权利要求5所述的半导体装置的制造方法，其特征在于，
所述惰性气体为氮气或氩气。
10.如权利要求5所述的半导体装置的制造方法，其特征在于，
所述底板的材质为铜、铝、AlSiC或MgSiC中的任一种。
11.如权利要求5所述的半导体装置的制造方法，其特征在于，
所述绝缘电路基板具有在陶瓷板的两侧粘接有所述导电箔的结构。
12.如权利要求5所述的半导体装置的制造方法，其特征在于，
所述导电箔为铜箔。
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