CN104213185A - Argon branching device for monocrystalline silicon growing furnaces - Google Patents
Argon branching device for monocrystalline silicon growing furnaces Download PDFInfo
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- CN104213185A CN104213185A CN201410412556.1A CN201410412556A CN104213185A CN 104213185 A CN104213185 A CN 104213185A CN 201410412556 A CN201410412556 A CN 201410412556A CN 104213185 A CN104213185 A CN 104213185A
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- argon
- purification
- circle
- ventilating pit
- monocrystalline silicon
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Abstract
The invention relates to a monocrystalline furnace argon system, and aims at providing an argon branching device for monocrystalline silicon growing furnaces. The argon branching device for monocrystalline silicon growing furnaces comprises argon purification rings and a top flange, wherein the argon purification rings are connected in sequence by bolts and round pins; the top flange is arranged at the top of a cavity of a monocrystalline furnace; one end of the argon purification ring at the upper end is connected with the top flange; an air vent is formed in the upper end of the top flange and used as an entrance channel of the argon; and a vent groove and an air vent are formed in each argon purification ring and respectively used as an inlet and an outlet of the argon on the argon purification ring. Through the use of the argon branching device for monocrystalline silicon growing furnaces, the argon flow entering into the furnace is more stable and uniform, so that the stability of the air pressure and the temperature in the furnace is ensured and the crystallization rate and the crystallization quality of the monocrystalline silicon rods are improved.
Description
Technical field
The invention relates to single crystal growing furnace argon system, particularly a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace.
Background technology
Single crystal growing furnace needs in body of heater, to pass into the rare gas elementes such as argon gas constantly in crystal pulling process, the inert gas environment of bonding crystals growth and stable pressure, argon stream can take away the Si oxide and impurity volatile matter that produce in silicon single-crystal pulling process in time simultaneously, ensures the crystal forming rate of silicon single crystal bar and becomes brilliant quality.If argon stream is uneven in body of heater, stable, not only affect Si oxide and impurity volatile matter is discharged in time, also can affect the stability of axle system on single crystal growing furnace, the crystal forming rate directly affecting silicon single crystal bar with become brilliant quality.For solving the problem of this respect, be necessary to provide a kind of argon gas part flow arrangement, make the argon stream stable and uniform entering body of heater, be conducive to Si oxide and impurity volatile matter is discharged in time, ensure the stability of axle system on single crystal growing furnace, thus the crystal forming rate improving silicon single crystal bar with become brilliant quality.
Summary of the invention
Main purpose of the present invention is to overcome deficiency of the prior art, provides a kind of can making to enter the argon stream stable and uniform in body of heater, the crystal forming rate improving silicon single crystal bar and the argon gas part flow arrangement becoming brilliant quality.For solving the problems of the technologies described above, solution of the present invention is:
There is provided a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace, comprise purification for argon circle and end face flange, purification for argon circle is at least provided with two, and is connected successively with straight pin with screw between purification for argon circle; End face flange is arranged on the cavity top of single crystal growing furnace, one end of the purification for argon circle of upper end and end face Flange joint;
The center of end face flange and purification for argon circle is all provided with a through hole, for as the lifting of axle system on single crystal growing furnace and rotating channel; The upper end of end face flange has ventilating pit, for the admission passage as argon gas; Each purification for argon circle has air channel and ventilating pit, and ventilating pit is distributed on air channel, and air channel and ventilating pit are respectively as the import of argon gas on purification for argon circle and outlet.
As further improvement, described air channel is circle shape groove, and ventilating pit is evenly distributed on air channel, and the ventilating pit of adjacent purification for argon circle is interspersed.
As further improvement, purification for argon circle is provided with four, respectively be purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D from top to bottom, and the flow area (total area of each purification for argon circle upper vent hole) on end face flange, purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D becomes large successively.
As further improvement, the lower end of described purification for argon circle D is cone structure, and the conical surface has ventilating pit.
As further improvement, the ventilating pit of setting end face flange, the ventilating pit diameter of purification for argon circle A, the ventilating pit diameter of purification for argon circle B, the ventilating pit diameter of purification for argon circle C, the ventilating pit diameter of purification for argon circle D are respectively D
0, D
1, D
2, D
3, D
4, meet
be greater than D
n, wherein n is 0,1,2,3,4.
As further improvement, the number of air hole on described purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D is respectively 2,4,8,16.
Compared with prior art, the invention has the beneficial effects as follows:
By use of the present invention, the argon stream stable and uniform more entering body of heater can be made, ensure the stability of body of heater internal gas pressure and temperature, thus the crystal forming rate improving silicon single crystal bar with become brilliant quality.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the ventilating pit distribution schematic diagram of purification for argon circle A in the present invention.
Fig. 3 is the ventilating pit distribution schematic diagram of purification for argon circle B in the present invention.
Fig. 4 is the ventilating pit distribution schematic diagram of purification for argon circle C in the present invention.
Fig. 5 is the ventilating pit distribution schematic diagram of purification for argon circle D in the present invention.
Reference numeral in figure is: 1 end face flange; 2 purification for argon circle A; 3 purification for argon circle B; 4 purification for argon circle C; 5 purification for argon circle D; 6 bodies of heater.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
As shown in Figure 1, a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace comprises purification for argon circle and end face flange 1.Purification for argon circle is provided with four, be respectively the purification for argon circle A2 of similar, purification for argon circle B3, purification for argon circle C4, purification for argon circle D5, be connected successively with straight pin with screw between four purification for argon circles, and be followed successively by purification for argon circle A2, purification for argon circle B3, purification for argon circle C4, purification for argon circle D5 from top to bottom.End face flange 1 is arranged on the cavity top of single crystal growing furnace, and the other end of purification for argon circle A2 is connected with end face flange 1.
End face flange 1 and four purification for argon circle centers are all provided with a through hole, for as the lifting of axle system on single crystal growing furnace and rotating channel.The upper end of end face flange 1 has ventilating pit, for the admission passage as argon gas.As shown in Fig. 2, Fig. 3, Fig. 4, Fig. 5, four purification for argon circles all have air channel and ventilating pit, air channel and ventilating pit are respectively as the import of argon gas on purification for argon circle and outlet, and the number of air hole on purification for argon circle A2, purification for argon circle B3, purification for argon circle C4, purification for argon circle D5 is respectively 2,4,8,16, the ventilating pit of adjacent purification for argon circle is interspersed.The lower end of purification for argon circle D5 is cone structure, and ventilating pit is opened on the conical surface, is conducive to argon gas and evenly spreads to surrounding.
According to design needs, require that the flow area on end face flange 1, purification for argon circle A2, purification for argon circle B3, purification for argon circle C4, purification for argon circle D5 becomes large successively.If end face flange 1 flow area is S
0, the flow area of purification for argon circle A2 is S
1, then S
1be greater than S
0.The ventilating pit of setting end face flange 1, the ventilating pit diameter of purification for argon circle A2, the ventilating pit diameter of purification for argon circle B3, the ventilating pit diameter of purification for argon circle C4, the ventilating pit diameter of purification for argon circle D5 are respectively D
0, D
1, D
2, D
3, D
4, by area formula S=π R
2, known S
0=π (D
0/ 2)
2, S
1=2 π (D
1/ 2)
2, then meet
in like manner can obtain
namely meet
be greater than D
n, wherein n is 0,1,2,3,4.
When argon gas enters from outside, first entered by the ventilating pit of end face flange 1, then by air channel and the ventilating pit of purification for argon circle A2, the like, sequentially through purification for argon circle B3, purification for argon circle C4, finally enter uniformly and stably in body of heater 6 from 16 apertures of the purification for argon circle D5 conical surface.
Finally, it should be noted that above what enumerate is only specific embodiments of the invention.Obviously, the invention is not restricted to above embodiment, a lot of distortion can also be had.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should think protection scope of the present invention.
Claims (6)
1. for an argon gas part flow arrangement for monocrystalline silicon growing furnace, it is characterized in that, comprise purification for argon circle and end face flange, purification for argon circle is at least provided with two, and is connected successively with straight pin with screw between purification for argon circle; End face flange is arranged on the cavity top of single crystal growing furnace, one end of the purification for argon circle of upper end and end face Flange joint;
The center of end face flange and purification for argon circle is all provided with a through hole, for as the lifting of axle system on single crystal growing furnace and rotating channel; The upper end of end face flange has ventilating pit, for the admission passage as argon gas; Each purification for argon circle has air channel and ventilating pit, and ventilating pit is distributed on air channel, and air channel and ventilating pit are respectively as the import of argon gas on purification for argon circle and outlet.
2. a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace according to claim 1, it is characterized in that, described air channel is circle shape groove, and ventilating pit is evenly distributed on air channel, and the ventilating pit of adjacent purification for argon circle is interspersed.
3. a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace according to claim 1, it is characterized in that, purification for argon circle is provided with four, respectively be purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D from top to bottom, and the flow area on end face flange, purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D becomes large successively.
4. a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace according to claim 3, is characterized in that, the lower end of described purification for argon circle D is cone structure, and the conical surface has ventilating pit.
5. a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace according to claim 3, it is characterized in that, the ventilating pit of setting end face flange, the ventilating pit diameter of purification for argon circle A, the ventilating pit diameter of purification for argon circle B, the ventilating pit diameter of purification for argon circle C, the ventilating pit diameter of purification for argon circle D are respectively D
0, D
1, D
2, D
3, D
4, meet
be greater than D
n, wherein n is 0,1,2,3,4.
6. a kind of argon gas part flow arrangement for monocrystalline silicon growing furnace according to claim 3, it is characterized in that, the number of air hole on described purification for argon circle A, purification for argon circle B, purification for argon circle C, purification for argon circle D is respectively 2,4,8,16.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410412556.1A CN104213185B (en) | 2014-08-20 | 2014-08-20 | Argon branching device for monocrystalline silicon growing furnaces |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410412556.1A CN104213185B (en) | 2014-08-20 | 2014-08-20 | Argon branching device for monocrystalline silicon growing furnaces |
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| CN104213185B CN104213185B (en) | 2017-01-25 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104562184A (en) * | 2015-01-26 | 2015-04-29 | 麦斯克电子材料有限公司 | Argon-filling flow stabilization device |
| CN110158154A (en) * | 2019-06-26 | 2019-08-23 | 西安奕斯伟硅片技术有限公司 | Constant-current stabilizer and crystal pulling furnace |
| CN110205675A (en) * | 2019-06-26 | 2019-09-06 | 西安奕斯伟硅片技术有限公司 | The manufacturing method and monocrystalline silicon of the current stabilization adjusting method of inert gas, monocrystalline silicon |
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| CN201512602U (en) * | 2009-09-11 | 2010-06-23 | 常州市祺科机械制造有限公司 | Single crystal furnace |
| US20140174339A1 (en) * | 2011-09-01 | 2014-06-26 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon single crystal |
| WO2014106080A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Electronic Materials S.P.A. | Fabrication of indium-doped silicon by the czochralski method |
| CN204174304U (en) * | 2014-08-20 | 2015-02-25 | 浙江晶盛机电股份有限公司 | A kind of argon gas part flow arrangement for monocrystalline silicon growing furnace |
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2014
- 2014-08-20 CN CN201410412556.1A patent/CN104213185B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201512602U (en) * | 2009-09-11 | 2010-06-23 | 常州市祺科机械制造有限公司 | Single crystal furnace |
| US20140174339A1 (en) * | 2011-09-01 | 2014-06-26 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon single crystal |
| WO2014106080A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Electronic Materials S.P.A. | Fabrication of indium-doped silicon by the czochralski method |
| CN204174304U (en) * | 2014-08-20 | 2015-02-25 | 浙江晶盛机电股份有限公司 | A kind of argon gas part flow arrangement for monocrystalline silicon growing furnace |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104562184A (en) * | 2015-01-26 | 2015-04-29 | 麦斯克电子材料有限公司 | Argon-filling flow stabilization device |
| CN110158154A (en) * | 2019-06-26 | 2019-08-23 | 西安奕斯伟硅片技术有限公司 | Constant-current stabilizer and crystal pulling furnace |
| CN110205675A (en) * | 2019-06-26 | 2019-09-06 | 西安奕斯伟硅片技术有限公司 | The manufacturing method and monocrystalline silicon of the current stabilization adjusting method of inert gas, monocrystalline silicon |
| US11629985B2 (en) | 2019-06-26 | 2023-04-18 | Xi'an ESWIN Material Technology Co., Ltd. | Method for regulating inert gas flow, method for preparing monocrystalline silicon, and monocrystalline silicon |
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| CN104213185B (en) | 2017-01-25 |
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