CN1042025A - Thin film of amorphous alloy - Google Patents
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- CN1042025A CN1042025A CN 88107243 CN88107243A CN1042025A CN 1042025 A CN1042025 A CN 1042025A CN 88107243 CN88107243 CN 88107243 CN 88107243 A CN88107243 A CN 88107243A CN 1042025 A CN1042025 A CN 1042025A
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Abstract
The present invention relates to a kind of thin film of amorphous alloy, it comprises that (i) is by at least one element of choosing among Fe and the Co, at least a element of (ii) choosing from Pt and Pd and (iii) by at least a element of choosing in (a)-(h) in the specification, described film has one perpendicular to its surperficial easy magnetizing axis.This film has good magneto-optical property and antioxygenic property, and its coercive force and Ke Er angle be time to time change not basically.In addition, described film also has high reflectivity.
Description
The present invention relates to a kind of thin film of amorphous alloy with good oxidation, more specifically, it relates to and having perpendicular to the easy magnetizing axis of film surface and a kind of thin film of amorphous alloy with good oxidation.
We know, the thin film of amorphous alloy that comprises at least a transition metal such as iron and cobalt and at least a rare earth element such as terbium (Tb) and gadolinium (Gb) has an easy magnetizing axis perpendicular to film surface, and can form a kind of little anti-magnetic domain by being antiparallel to the magnetized magnetization of film.By corresponding to the existence of this anti-magnetic domain or do not exist and represent " 1 " or " 0 " digital signal record just to be become possibility on above-mentioned thin film of amorphous alloy.
As being used as comprising of Magnetooptic recording medium of at least a transition metal and the thin film of amorphous alloy of at least a rare earth element, for example in Japanese patent laid-open publication gazette 57-20691, disclosed the Tb-Fe series thin film of amorphous alloy that comprises 15 to 30 atom %Tb.Also there be known comprising to be added with Magnetooptic recording medium, the known series of Tb-Co in addition and the Tb-Fe-Co series Magnetooptic recording medium of the Tb-Fe series thin film of amorphous alloy of the third metal.
Although the Magnetooptic recording medium that comprises thin film of amorphous alloy of giving an example above has good record and duplication characteristic, from practical point of view, they still comprise a serious problem, i.e. thin film of amorphous alloy easily oxidation in general use, its performance time to time change.
For example at Journal of the Society of Applied Magnetism of Japan, Vol.9, No.2, among the pp93-96, the above-mentioned oxidation deterioration mechanism that comprises the thin film of amorphous alloy of transition metal and rare earth element has been discussed, this article reports that the mechanism of oxidation deterioration can be divided into following three types.
A) spot corrosion
Spot corrosion is meant and pin hole occurs in thin film of amorphous alloy, and this corrosion is mainly carried out under high humidity environment, and it carries out in for example Tb-Fe and Tb-Co series thin film significantly.
B) surface oxidation
On the surface of thin film of amorphous alloy, form surface oxide layer, thus the gram ear anglec of rotation θ k(Kerr-rotation angle of film) change in time, and reduce at last.
C) selective oxidation of rare earth element
Be present in rare earth element in the magneto-optical recording film by optionally oxidation, make the coercive force Hc of the film intercropping great changes at any time that become thus.
Up to now, made the oxidation deterioration that various trials suppress above-mentioned this thin film of amorphous alloy.For example, proposed a kind of process, wherein thin film of amorphous alloy has three-decker, and wherein film is sandwiched in such as Si
3N
4, SiO, SiO
2And between the anti-oxidation protection layer of AlN.Yet; the anti-oxidation protection layer that proposes is above comprising such problem; be that they are somewhat expensive; simultaneously; their formation on thin film of amorphous alloy needs many time and labors; and,, can not reach the enough inhibition rotten to film oxidation even when on film, forming this anti-oxidation protection layer yet.
And then, now carrying out various trials, by the 3rd metal constituent element being mixed the non-oxidizability of improving thin film of amorphous alloy in film such as Tb-Fe and the Tb-Co series.
For example, above-mentioned Journal of the Society of AppliedMagnetism of Japan disclosed by fusion in film go into content for until 3.5 atom % such as Co, Ni, Pt, Al, the 3rd metal constituent element of Cr and Ti improves a trial of Tb-Fe or Tb-Co series thin film of amorphous alloy non-oxidizability, in conjunction with this trial, described periodical report, the a small amount of Co of combination in Tb-Fe or Tb-Co, Ni and Pt can effectively suppress the surface oxidation and the spot corrosion of gained film, but can not suppress to be included in as rare earth element the selective oxidation of the Tb in the film.This announcement means, when with a small amount of Co, Ni and Pt adding Tb-Fe or Tb-Co, be present in the selected oxidation of Tb in the gained film, and the coercive force Hc of film alters a great deal.Therefore, even adding is until a small amount of Co, Ni and the Pt of 3.5 atom % in Tb-Fe or Tb-Co, enough improvement do not take place in the non-oxidizability of gained film yet.
In order to improve the non-oxidizability of thin film of amorphous alloy, at Proceedings of the Nineth Conference the Society Applied Magnetism of Japan(1985, November) disclosed in the 209th page by in Tb-Fe or Tb-Fe-Co, adding content and be Pt until 10 atom %, Al, Cr and/or Ti and the viewpoint of the thin film of amorphous alloy that obtains, yet, even with content is Pt until 10 atom %, Al, Cr and/or Ti add among Tb-Fe or the Tb-Fe-Co, although surface oxidation and spot corrosion can be suppressed, also be inadequate to the inhibition of the selective oxidation that is present in the Tb in the gained film to quite effective degree.Therefore, still exist such problem, promptly the coercive force Hc of gained film is with intercropping great changes at any time, and last, coercive force Hc reduces greatly.
Prior art reference discussed above does not disclose a kind of thin film of amorphous alloy that is disclosed here.
Journal of Magnetism ﹠amp; Magnetic Materials, 41, (1984) pp128-130 and pp125-127 have disclosed and wherein have been added with until the Fe-B of about 3 atom %Co, Cr or Pt series amorphous alloy.Amorphous alloy is configured as the band of thickness 25 to 30 μ m, studies its magnetic strain.Yet neither one has the oxidative resistance that substantially improves in the alloy that is disclosed.
In addition, can in the band plane rather than perpendicular to the magnetization of band plane, not consider the possibility of band perpendicular magnetization here by the molten mass centrifugal casting (spinning) of this paper description or the amorphous alloy strip steel rolled stock of quick cooling method acquisition.
The open 58-7806 of Japan Patent has disclosed the polycrystal membrane with Pt Co constituent, wherein comprises the Pt of 10-30 atom %.
Yet the polycrystal membrane with this Pt Co constituent comprises such problem, promptly, formed polycrystal membrane needs through heat treatment such as annealing, because they are polycrystal, crystal boundary occurs as interference signal sometimes, and the Curie point height of polycrystal membrane.
The present invention is in order to solve the above-mentioned problem relevant with prior art, an object of the present invention is to provide a kind of thin film of amorphous alloy, it should have good magneto-optical property, the coercive force and big gram ear and the faraday's anglec of rotation (Kerr and Faradayrotation angle) that comprise increase, it should have good oxidative resistance, and the coercive force of film and Ke Er angle are not changed basically in time, and it should have high reflectivity.
Thin film of amorphous alloy of the present invention comprises:
(ⅰ) by at least one element of selecting among Fe and the Co,
(ⅱ) by at least one element of selecting among Pt and the Pd,
(ⅲ) by following:
(a) the 3d transition elements except Fe and Co,
(b) the 4d transition elements except Pd,
(c) the 5d transition elements except Pt,
(d) light rare earth element,
(e) family's III B element,
(f) family's IV B element,
(g) family's V B element and
(h) family's VI B element;
In at least one element of choosing, it has an easy magnetizing axis perpendicular to film surface.
Thin film of amorphous alloy of the present invention has good magneto-optical property, comprises the coercive force that increased and the big gram ear anglec of rotation and faraday's anglec of rotation.In addition, it has good oxidative resistance, and therefore, the coercive force of film and Ke Er angle be time to time change not basically.In addition, it has high reflectivity, has good duplication characteristic simultaneously such as the C/N ratio that increases.
To describe thin film of amorphous alloy of the present invention in detail now.
Thin film of amorphous alloy of the present invention comprises (ⅰ) by at least a element of choosing among Fe and the Co, (ⅱ) by at least a element of choosing among Pt and the Pd with (ⅲ) by as described below group of (a) and (b), (c), (d), (e), (f), (g) with at least a element of choosing (h), it has an easy magnetizing axis vertical with film surface.
(ⅰ) by at least a element of choosing among Fe and the Co
Thin film of amorphous alloy of the present invention is preferable to comprise Fe and/or the Co that content is 2 to 95 atom %, an element in being included in film or half of a plurality of element (ⅲ) or more (at least 50 atom %) are when being made of one or more light rare earth element, then film preferably comprises Fe and/or the Co that content is 5 to 84 atom %, particularly preferably comprises Fe and/or the Co of from 10 to 75 atom %.Half of a kind of element in being included in film or multiple element (ⅲ) or more (being at least 50 atom %) are when being made of one or more elements except that light rare earth element, then Fe that comprises in the film and/or Co content are preferably 5 to 94 atom %, be more preferred from from 10 to 89 atom %, the best is 10 to 80 atom %.
(ⅱ) at least a element of from Pt and Pd, choosing
It is enough comprising greater than 0 atom %Pt and/or Pd in the film, is preferably, and described film comprises until 94 atom %Pt and/or Pd.Half of a kind of element in being included in film or multiple element (ⅲ) or more (at least 50 atom %) are when being made of one or more light rare earth element, then preferably described film comprises Pt and/or the Pd of 5 to 94 atom %, and preferably content is 10 to 80 atom %.Half of a kind of element in being included in film or multiple element (ⅲ) or more (at least 50 atom %) are when being made of a kind of element except light rare earth element or multiple element, then Pt that comprises in the film and/or Pd content are preferably until 90 atom %, be more preferred from until 80 atom %, the best is 10 to 80 atom %.
The existence of Pt and/or Pd has brought following advantage in the film:
(1) when film comprises light rare earth element
Can make film at perpendicular magnetization, and need not make, and the latter still is necessary when the magnetisable film of preparation vertical direction so far as what heavy rare earth element.Described film is anti-spot corrosion and anti-surface oxidation, and gram ear angle does not change in time, it is special when film comprises at least 5 atom %Pt and/or Pd, the selective oxidation that is present in the light rare earth element in the film is inhibited, make not time to time change of coercive force thus, and improved the reflectivity on the film surface.
(2) when film does not comprise light rare earth element
The magnetizable film of the time-independent amorphous vertical direction of Ke Erjiao of anti-spot corrosion and surface oxidation can be provided, when film comprises at least 5 atom %Pt and/or Pd, improve reflectivity especially.
(3) by at least a element of selecting in the group (a) to (h)
Except top (ⅰ) with (ⅱ), at least a element that thin film of amorphous alloy of the present invention is chosen also comprising from following group (a) to (h).
(a) the 3d transition elements except that Fe and Co
The example of the 3d transition elements except that Fe and Co comprises Sc, Ti, V, Cr, Mn, Ni, Cu and Zn.In these elements, be preferably Ti, Ni, Cu and Zn.
(b) the 4d transition elements except that Pd
The example of the 4d transition elements except that Pd comprises Y, Zr, Nb, Mo, Tc, Ru, Rh, Ag and Cd.In these elements, preferred Zr and Nb.
(c) the 5d transition elements except that Pt
The example of the 5d transition elements except that Pt comprises Hf, Ta, W, Re, Os, Ir, Au and Hg.In these elements, preferred Ta.
(d) light rare earth element
The example of light rare earth element comprises La, Ce, Pr, Nd, Pm, Sm and Eu.In these elements, preferred Nd.
(e) family's III B element
The example of the III B of family element comprises B, Al, Ga, In and Tl.In these elements, preferred B, Al and Ga.
(f) family's IV B element
The example of the IV B of family element comprises C, Si, Ge, Sn and Pb.In these elements, preferred Si, Sn, Pb and Ge.
(g) family's V B element
The example of the V B of family element comprises N, P, As, Sb and Bi.In these elements, preferred Sb.
(h) family's VI B element
The example of the VI B of family element comprises S, Se, Te and Po, in these elements, and preferred Te.
Thin film of amorphous alloy of the present invention comprises at least a element of choosing that content is preferably 2 to 95 atom % from group (a) to (h), half of element in being included in film or multiple element (ⅲ) or more (at least 50 atom %) are when being made of one or more light rare earth element, described film is preferable to comprise element or the multiple element (ⅲ) that content is 1 to 80 atom %, content is more preferred from 10 to 70 atom %, is preferably 10 to 50 atom %.Half of a kind of element in being contained in film or multiple element (ⅲ) or more (at least 50 atom %) are when being made of the element except one or more light rare earth element, the content that is contained in one or more elements (ⅲ) in the film is preferably 5 to 94 atom %, be more preferred from 10 to 89 atom %, the best is 10 to 80 atom %.
Film with above-mentioned constituent is a kind of amorphous alloy with perpendicular to the easy magnetizing axis of film surface, and this has obtained confirmation by large-angle X-ray diffraction, and it can show a favourable square gram ear magnetic hysteresis loop.
Term " film shows a favourable square gram ear magnetic hysteresis loop " means θ k2/ θ K1 ratio and is at least 0.8, wherein θ K1 is the gram ear anglec of rotation of externally-applied magnetic field magnetic saturation state when maximum, and θ k2 is the gram ear anglec of rotation of externally-applied magnetic field remnant magnetism state when being zero.
As mentioned above, compare with the film that does not comprise Pt or Pd, the film that comprises at least 15 atom %Pt and/or Pd has the reflectivity R of improvement.When thin film of amorphous alloy is used for magnetooptic recording, because the amorphous state character of medium, the media noise that causes by crystal boundary with regard to unnecessary consideration.But must consider the shot noise of used optical detector, in this case, know that because C/N and R θ k are proportional, at least one is enough to increase C/N among increase R and the θ k.Therefore, this fact of reflectivity R that thin film of amorphous alloy can have increase is favourable, and C/N improves in the magnetooptic recording because this can make.
In the present invention, also might improve the coercive force Hc or the gram ear anglec of rotation θ k of Curie point, compensation temperature, film, or production cost be reduced by be incorporated into various elements at film.Be used for these elements of uncommon purpose can use in certain proportion, for example make their replace one or more elements (ⅲ) less than 50 atom %.The example of these other elements is heavy rare earth elements, for example comprises Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.When the combined use of these heavy rare earth elements, answer preferable use at least 5 atom %Pt and/or Pd, to overcome the selective oxidation problem.
Set forth the preparation process of thin film of amorphous alloy of the present invention below.
To matrix, can prepare thin film of amorphous alloy of the present invention by the thin film deposition that will have the predetermined composition thing, wherein matrix is maintained near the room temperature, by sputtering method or electron beam evaporation method, the alloys target that constitutes the composite target of required film by the element sheet with predetermined ratio thereon or have a predetermined composition is deposited to (this matrix can be fixed on the described matrix, perhaps can perhaps can when revolution, rotate) along its axle rotation along its axle.
Therefore, thin film of amorphous alloy of the present invention can at room temperature form, and so the film that forms always need not be the heat treatment such as annealing etc. that makes that film has that easy magnetizing axis perpendicular to film needs usually.
In this, if desired, when thin film of amorphous alloy of the present invention also can be heated to 50-600 ℃ with matrix or when matrix being cooled to-50 ℃, on matrix, form.
In addition, when sputter, it also is possible being biased in matrix, thereby makes matrix have negative potential.By doing like this, the inert gas that quickens in electric field such as argon gas ion will not only can clash into the target material, also can clash into the film of formation, therefore can obtain to have the magnetizable film of vertical direction of superperformance.
The thickness of thin film of amorphous alloy of the present invention can be 20 to 50000
, be preferably 100 to 5000
Because thin film of amorphous alloy of the present invention has the easy magnetizing axis perpendicular to film surface, they can be applicable to various fields, such as magnetic recording material, comprise perpendicular magnetic recording film, magnetic bubble memory and magneto-optical recording film, they also can be used for utilizing in the optical modulator of magneto optical effect.
In the perpendicular magnetic recording field, thin film of amorphous alloy of the present invention can be used as the recording sheet of vertical flexible disk (-sc) and rigid magnetic disks.In magnetooptic recording, magneto optical disk field, be used to write down the gram ear anglec of rotation or faraday's anglec of rotation that magneto-optic card and magneto-optic band with reproducing signals or static or motion video utilize film.In addition, they can be used in the optical modulator, and optical modulator is controlled gram ear or faraday's anglec of rotation of the thin film of amorphous alloy of arrangement by controlling externally-applied magnetic field, and makes photocell work by the light quantity that changes reflection or transmitted light.
Situation in the time of will setting forth thin film of amorphous alloy of the present invention as magneto optical disk record film below.
Film of the present invention is to have a magnetizable film of the vertical direction perpendicular to the easy magnetizing axis of film, preferable film has square gram ear magnetic hysteresis loop, the θ k of magnetic saturation state was identical when the θ k under the environment that no externally-applied magnetic field exists was in fact maximum with externally-applied magnetic field, and Hc is big for its coercive force, therefore, they are applicable to magneto-optical recording film.In addition, the favourable θ f that means of θ k is also favourable, and therefore, thin film of amorphous alloy of the present invention is applicable to the Kerr effect application system and Faraday effect application system.
In addition, because film of the present invention has good oxidative resistance, they always do not need those diaphragms as the conventional film that is used for comprising heavy rare earth element and 3d transition metal alloy such as Tb-Fe, Tb-Fe-Co to prevent oxidation.
Moreover, always need in the matrix of contiguous recording sheet or other functional films (as enhanced film and reflective film), not use oxidation-resistant material or use adhesion layer for superimposed purpose.
In addition, even on thin film of amorphous alloy of the present invention, form enhanced film and/or reflective film, except dry film forming method such as vacuum evaporation or sputter, can form described film by wet film forming method such as spin coating that can not be used for conventional magneto-optical recording film or spraying method.
Therefore, the magneto optical disk member that contains on it as the thin film of amorphous alloy of the present invention of recording sheet can comprise array structure down:
(ⅰ) matrix/recording sheet,
(ⅱ) matrix/enhanced film/recording sheet,
(ⅲ) matrix/recording sheet/reflective film,
(ⅳ) matrix/enhanced film/recording sheet/reflective film and
(ⅴ) matrix/enhanced film/recording sheet/enhanced film/reflective film.
Magneto optical disk with said structure has a protection film or security bar at the outermost layer of recording sheet side, to give described outermost layer anti scuffing or resistance to oxidation.
Enhanced film can be the organic or inorganic material, as long as they have the refractive index greater than matrix.
The example that is used for the suitable material of reinforcing membrane comprises that for example oxide is such as TiO
2, SiO
2, TiO, ZnO, ITO(tin indium oxide), ZrO
2, Ta
2O
5, Nb
2O
5, CoO
2, SnO
2, and TeO
2, nitride is such as Si
3N
4, AlN and BN, sulfide such as ZnS and CdS and ZnSe, SiC and Si.In addition, have Faraday effect transparent material such as ferrite, be typically cobalt ferrite and garnet and also can be used as a kind of material and be used for the reinforcing membrane material.
As matrix, can adopt inorganic material such as glass, aluminium etc. with the polymer alloy of organic material such as polymethyl methacrylate, Merlon, Merlon and polystyrene, at United States Patent (USP) 4, the amorphous polyolefin that discloses in 614,778, poly--4-methyl-1-pentene, epoxy resin, polyether sulfone, polysulfones, Polyetherimide etc.
In addition, the structure of magneto optical disk is not limited in the structure of talking about above (ⅰ)-(ⅴ), if necessary, described dish can provide one deck auxiliary layer, oxidation barrier film or high-permeability soft magnetic film, described dish both can singlely use, and also can use under by the superimposed plate-like attitude that obtains that two dishes are combined.
Comprise at least one element that (ⅰ) chooses from Fe and Co, (ⅱ) at least a element chosen and have a thin film of amorphous alloy of the present invention perpendicular to the easy magnetizing axis of film surface and have good magneto-optical property by at least one element of choosing among Pt and the Pd and (ⅲ) from above-mentioned group (a) to (h), comprise the coercive force and the big gram ear anglec of rotation and the faraday anglec of rotation that have increased, it has good non-oxidizability, thereby the coercive force of film and the variation in time basically of the Ke Er anglec of rotation.Described film also has high reflectivity.Moreover thin film of amorphous alloy of the present invention can at room temperature form on matrix, and the film that forms does not so need through heat treatment.
To further set forth the present invention below.
Experiment sequence 1-21
Employing is placed in the composite target of Pt on the Co target and another element sheet with predetermined ratio, and the thin film of amorphous alloy that will have constituent shown in the table 1 is deposited on the glass basis under 20-30 ℃ by dc magnetron sputtering (DC magnetron Sputtering).The condition that film forms comprises that it is that 5m torr, Ar flow rate are that 3sccm and final vacuum are not more than 5 * 10 that Ar presses
-6Torr, DC current values (A) and sputtering time (sec) see Table 1.
The crystallization condition of the film that obtains is determined that by the large-angle X-ray diffraction instrument composition of resultant film is determined by the ICP emission spectrographic analysis.
The gram ear anglec of rotation by oblique incidence angle method (
=633nm) under being 0 remanent magnetism condition, measures externally-applied magnetic field by the glass-based side, being used for " Measuring Technique of Magnetic Materials " that the concrete grammar of the measurement of tilt-angle method and its device edit at Kazuo Yamakawa (by Torikepps K.K. publication, 1985.12.15) is described in the literary composition.
The reflectivity of the film that obtains by
=780nm determines, adopts the Al film that forms on glass basis by vacuum evaporation as standard specimen.
In addition, the mode of stating of below chatting face to face is carried out anti-oxidant test to the alloy film that is obtained, and the film that will form on glass basis places environmental test, wherein makes film be under 85 ℃, the hot wet condition of 85%RH 240,450 or 1000 hours.This is determined gram the ear anglec of rotation (θ k), reflectivity (R) and coercive force (Hc) when finishing in stage, and respectively with environmental test before initial value θ k
0, Ro and Hc
0Compare, the result is as shown in table 1.Experiment sequence 22 and 23
Except employing was placed in the composite target of Pt on the Co target or Tb sheet, all the other all came Computer-Assisted Design, Manufacture And Test Pt-Co or Tb-Co alloy firm according to the process of previous experiments sequence, and the result is as shown in table 1.
*: after 1000 hours
*: after 450 hours
The experiment sequence 24
Employing is placed in Pd, Nd on the Co target and the composite target of Co sheet, forms Pd-Nd-Co series alloy film by the dc magnetron sputtering method on glass basis.The condition that film forms comprises that Ar pressure is that 5m torr, Ar flow rate are that 3sccm, final vacuum are not more than 5 * 10
-6Torr, direct current are that 0.20A and sputtering time are 90 seconds.Demonstrated by the large-angle X-ray diffraction instrument, the film that is obtained is amorphous.Be observed this fact by the gram ear anglec of rotation, it is magnetisable in vertical direction also to have disclosed described film.
Experiment sequence 25
Employing is placed in the Sb on the Co target and the composite target of Pd sheet, forms Pd-Sb-Co series alloy film by the dc magnetron sputtering method on glass basis.The condition that film forms comprises that Ar pressure is that 5m torr, Ar flow rate are that 3sccm, final vacuum are not more than 5 * 10
-6Torr, direct current are that 0.20A and sputtering time are 90 seconds.Demonstrated by the large-angle X-ray diffraction instrument, the film that is obtained is amorphous.Be observed this fact by the gram ear anglec of rotation, also disclosing described film is magnetizable in vertical direction.
Claims (13)
1, a kind of thin film of amorphous alloy is characterized in that it comprises:
(i) at least a element of from Fe and Co, choosing,
At least a element of (ii) from Pt and Pd, choosing and
(iii) from (a) the 3d transition elements except that Fe and Co,
(b) the 4d transition elements except that Pd,
(c) the 5d transition elements except that Pt,
(d) light rare earth element,
(e) family's III B element,
(f) family's IV B element,
(g) family's V B element and
(h) family's VI B element
In at least a element chosen, described film has the easy magnetizing axis perpendicular to film surface.
2, by the described thin film of amorphous alloy of claim 1, it is characterized in that described 3d transition elements except that Fe and Co is Ti, Ni, Cu or Zn.
3, by the described thin film of amorphous alloy of claim 1, it is characterized in that described 4d transition elements except that Pd is Zr or Nb.
4, by the described thin film of amorphous alloy of claim 1, it is characterized in that described 5d transition elements except that Pt is Ta.
5, by the described thin film of amorphous alloy of claim 1, it is characterized in that described light rare earth element is Nd, Sm or Pr.
6, by the described thin film of amorphous alloy of claim 1, it is characterized in that the described III B of family element is B, Al or Ga.
7, by the described thin film of amorphous alloy of claim 1, it is characterized in that the described IV B of family element is Si, Sn or Pb.
8, by the described thin film of amorphous alloy of claim 1, it is characterized in that the described V B of family element is Sb.
9, by the described thin film of amorphous alloy of claim 1, it is characterized in that the described VI B of family element is Te.
10, by the described thin film of amorphous alloy of any claim in the claim 1 to 9, the thickness that it is characterized in that described film is 20 to 50000
11, by the described thin film of amorphous alloy of arbitrary claim in the claim 1 to 10, it is characterized in that described film is used for magnetooptic recording.
12, by the described thin film of amorphous alloy of arbitrary claim in the claim 1 to 10, it is characterized in that described film is used for perpendicular magnetic recording.
13, by the described thin film of amorphous alloy of arbitrary claim in the claim 1 to 10, it is characterized in that described film is used for optical modulator.
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| CN 88107243 CN1042025A (en) | 1988-10-17 | 1988-10-17 | Thin film of amorphous alloy |
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| US10566522B2 (en) | 2012-05-22 | 2020-02-18 | SK Hynix Inc. | Platinum and cobalt/copper-based multilayer thin film having low saturation magnetization and fabrication method thereof |
| CN102937705A (en) * | 2012-11-20 | 2013-02-20 | 重庆大学 | Direct-current magnetic sensor with composite structure |
| CN103614669A (en) * | 2013-12-19 | 2014-03-05 | 江苏南方永磁科技有限公司 | High-initial-magnetic-conductivity amorphous ribbon alloy material and preparation method thereof |
| CN103668007A (en) * | 2013-12-19 | 2014-03-26 | 南京信息工程大学 | Microcrystalline alloy thin belt with high saturation magnetic induction strength and preparation method thereof |
| CN103614669B (en) * | 2013-12-19 | 2015-05-13 | 江苏南方永磁科技有限公司 | High-initial-magnetic-conductivity amorphous ribbon alloy material and preparation method thereof |
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