CN104201059B - Based on the RF MEMS Switches of electrostatic repulsion and gravitation combination drive - Google Patents
Based on the RF MEMS Switches of electrostatic repulsion and gravitation combination drive Download PDFInfo
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- CN104201059B CN104201059B CN201410444896.2A CN201410444896A CN104201059B CN 104201059 B CN104201059 B CN 104201059B CN 201410444896 A CN201410444896 A CN 201410444896A CN 104201059 B CN104201059 B CN 104201059B
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- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000005686 electrostatic field Effects 0.000 abstract description 9
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- 230000005684 electric field Effects 0.000 abstract description 7
- 230000008054 signal transmission Effects 0.000 abstract description 2
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- 238000000034 method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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Abstract
Do you the present invention proposes the novel RF of a kind of electrostatic repulsion and gravitation combination drive? mems switch is a kind of novel capacitance type micromechanical switch.This switch is equally spaced along transmission line direction is provided with three fixed electrodes in the below of transmission line.When applying operating voltage to the fixed electrode of upper and lower simultaneously, the fixed electrode of below defines non-uniform electric field around movable bridge film, produces electrostatic repulsion; The fixed electrode of top then produces an electrostatic field, and the movable bridge film be in wherein is subject to electrostatic attraction.Movable bridge film is under the acting in conjunction of electrostatic attraction and electrostatic repulsion, and move up away from below fixed electrode, the final Signal transmissions linear contact lay with being suspended from above movable bridge film to be to realize the connection of switch.The invention solves the problem that tradition relies on the charge accumulated occurred during electrostatic attraction work, and solve high voltage problem when relying on electrostatic repulsion work to a certain extent, while the reliability improving switch, enhance the practicality of switch.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (MEMS) field, be specifically related to condenser type radio frequency micro-electromechanical switch (RFMEMS), particularly a kind of novel RFMEMS switch based on electrostatic repulsion and gravitation.
Background technology
Microelectromechanical systems (Micro-Electro-MechanicalSystem), be called for short MEMS, be a kind of industrial technology microelectric technique and mechanical engineering are fused together, it has, and cost is low, volume is little, lightweight, high reliability.Its opereating specification is in micrometer range, and generally, the size of most of micro-electromechanical device is usually between 20 microns to one millimeter.MEMS (micro electro mechanical system) inside comprises the microsensor of a microprocessor and some acquisition external informations usually.As we now known to, under this size range, classical physics philosophy is usually inapplicable.And due to the sizable surface area/volume ratio of MEMS (micro electro mechanical system), the such as skin effect such as electrostatic and infiltration is more much larger than the bulk effect such as inertia and specific heat, this is also that the present invention adopts electrostatic force as the main cause of the drive source of switch.In addition, this switch has also related to radio-frequency technique (RadioFrequency), is called for short RF.And RFMEMS switch is exactly the wherein a kind of typical apply of MEMS technology in RF field, it is the key element of microwave signal and high-frequency signal conversion, and compared to traditional switch, RFMEMS switch has the following advantages: 1 is low in energy consumption; 2 high-isolations; 3 insertion loss are low; 4 intermodulation components are low; 5 costs are low.
In RFMEMS switching technique, there is several popular sorting technique, beam type, bridge-type and torque arm formula can be divided into according to construction of switch.The modes such as electrostatic driving, thermal drivers, Electromagnetic Drive and Piezoelectric Driving are divided into according to drive principle, wherein electrostatic drive-type can be divided into Ohmic contact formula and capacitance coupling type again, wherein Capacitive RF MEMS switch is because its driving voltage is little, advantages of simple structure and simple obtains academia especially and approves widely and large-scale input research, is one of current most popular RFMEMS switch variety.
But, although Capacitive RF MEMS switch has above-mentioned plurality of advantages, but even to this day, long-term reliability problems is still the bottleneck of its large-scale commercial, wherein affecting the maximum factor of reliability is exactly that irreversible " adhesion " occurred in switch was lost efficacy, and " adhesion " was lost efficacy and then caused by charge accumulated in switching medium layer (also claiming " medium charging ").Therefore, studying a kind of RFMEMS switch even thoroughly eliminating charge accumulated that can reduce will improve switch reliability greatly, and then realizes its large-scale commercial applications.
Summary of the invention
The present invention, in order to charge build-up problems existing in the Capacitive RF MEMS switch that solves tradition and rely on electrostatic attraction to drive, provides a kind of New-type radio-frequency switch based on electrostatic repulsion and gravitation combination drive.
The present invention adopts following technical scheme to realize:
A kind of RF MEMS Switches based on electrostatic attraction and repulsion combination drive, comprise substrate, described substrate is coated with oxide layer, and the both sides of described oxide layer upper surface are respectively arranged with the first earth connection and the second earth connection, and between described first earth connection and the second earth connection, erection has movable bridge film; Described oxide layer upper surface middle part is arranged side by side first fixed electrode consistent with movable bridge film direction, the second fixed electrode and the 3rd fixed electrode, described second fixed electrode is positioned at immediately below movable bridge film, and described first fixed electrode and the 3rd fixed electrode are positioned at the both sides of the second fixed electrode; Described oxide layer upper surface is provided with consistent with earth connection direction and across the signal transmssion line of movable bridge film, on described movable bridge film, the position be positioned at below signal transmssion line is provided with dielectric layer.
During work, first fixed electrode and the 3rd fixed electrode add identical positive voltage, the second fixed electrode do not add any voltage, this positive voltage will around the second fixed electrode and movable bridge film generation non-uniform electric field, produce electrostatic repulsion, make movable bridge film upwards stressed; Signal transmssion line is connect positive voltage simultaneously, produce electrostatic field, in this field regime, movable bridge film will by electrostatic attraction upwards, under electrostatic repulsion and electrostatic attraction combination drive, movable bridge film moves up away from the second fixed electrode, on it, the lower surface of the signal transmssion line with top contacts by the upper surface of dielectric layer, and radiofrequency signal is just coupled on the first earth connection and the second earth connection from signal transmssion line by movable bridge film afterwards, and now switch is in closure state; On the contrary, after removing the voltage on first and third fixed electrode and signal transmssion line, now movable bridge film gets back to initial position under the effect being subject to natural resiliency restoring force, due to the increase of their spacing, electric capacity will reduce, radiofrequency signal would not be coupled to earth connection but continue along signal transmssion line transmission, and now switch disconnects.
The invention solves tradition and rely on charge build-up problems existing in the Capacitive RF MEMS switch of electrostatic attraction driving, traditional Capacitive RF MEMS switch based on electrostatic repulsion is spaced on the direction of transmission line is provided with fixed drive electrode part, the structure that three fixed electrodes and movable bridge film are formed creates electric charge uneven distribution electric field in energising situation, creates electrostatic repulsion thus between fixed electrode and movable bridge film, in addition, transmission signal line is applied with positive voltage, make use of the drive form of conventional electrostatic gravitation, define electrostatic field within the specific limits, movable bridge film also receives electrostatic attraction, therefore, this switch is under the combination drive of electrostatic repulsion and electrostatic attraction, movable bridge film bends and makes it to move upward, until realize with Signal transmissions linear contact lay that switch is closed to be disconnected, due to when switch closes, at fixed drive electrode, place is applied with voltage, create electrostatic repulsion, share voltage stress when conventional electrostatic gravitation drives separately, to the full extent by charge accumulated existing in Capacitive RF MEMS switch and produce corresponding leakage current and controlled to below threshold value, make the use leakage current maximum possible of charge accumulated and the generation produced not affecting switch, greatly enhance the reliability of switch.We know, traditional electrostatic repulsion switch drive voltage is excessive, to such an extent as to cannot wide popularization and application, the present invention is in order to overcome this limitation condition, creationary acting in a diametrically opposite way on the basis of electrostatic repulsion switch introduces electrostatic attraction, by applying voltage on the transmission line, form an electrostatic field, and movable bridge film is subject to electrostatic attraction upwards in this field regime, under the combination drive of electrostatic attraction and electrostatic repulsion, charge build-up problems can not only be solved to the full extent, also fundamentally driving voltage is reduced, popularization for it eliminates maximum obstacle.
In like manner, can be known by the course of work of switch, the novel RFMEMS switch of this electrostatic repulsion and gravitation combination drive is in its whole course of work, although the movable bridge film contacted with each other and signal transmssion line have certain driving voltage, but, the voltage burden of traditional electrostatic attraction is shared owing to there being electrostatic repulsion, make the electrical potential difference between signal transmssion line and movable bridge film be reduced to below the threshold potential difference of generation integrity problem, thus inhibit the generation of charge accumulated phenomenon, simultaneously, contrast is used alone the RFMEMS switch that electrostatic repulsion drives, this invention puts on certain voltage to this transmission signal line, formed electrostatic field and within the scope of electrostatic field movable bridge film be subject to electrostatic attraction, form the combination drive of switch based on electrostatic repulsion and gravitation, relatively large driving voltage is needed due to electrostatic repulsion will be formed, therefore, combination drive reduces the simple electrostatic repulsion that relies on to a great extent and drives required voltage, while improve switch reliability, greatly reduce the driving voltage of switch, for the large-scale commercial application of mems switch provides powerful guarantee.
The present invention is reasonable in design, belongs to the driving RFMEMS switch of electrostatic, has the advantage of the driving RFMEMS switch of general electrostatic equally, such as insertion loss is low, isolation is high, low in energy consumption, the linearity is high, structure is simple and cost is lower etc.
Accompanying drawing explanation
Fig. 1 is the structural representation of RFMEMS switch of the present invention.
Fig. 2 is the profile of RFMEMS switch of the present invention.
Fig. 3 is the A-A sectional drawing of Fig. 2.
Fig. 4 is the structural representation of substrate in RFMEMS switch of the present invention.
Fig. 5 is the schematic diagram in RFMEMS switch of the present invention, substrate being arranged movable bridge film.
Fig. 6 is RFMEMS switch of the present invention operationally voltage applying schematic diagram.
In figure, 1-first earth connection, 2-second earth connection, 3a-input, 3b-first support arm, 3c-intermediate arm, 3d-second support arm, 3e-output, 4-first fixed electrode, 5-second fixed electrode, 6-the 3rd fixed electrode, 7a-first brace summer, 7b-crossbeam, 7c-second brace summer, 8-dielectric layer, 9-oxide layer, 10-substrate.
Embodiment
Below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
RFMEMS switch based on electrostatic repulsion and gravitation combination drive utilizes the drive principle of electrostatic repulsion and electrostatic attraction respectively, absorb the advantage of these two kinds of type of drive, the construction of switch made new advances is built by the mode of combination drive, solve the problem that charge build-up problems in traditional dielectric layer produced because of electrostatic attraction is excessive with traditional driving voltage produced based on electrostatic repulsion to the full extent, significantly improve the reliability of RFMEMS switch.
As shown in Figure 1, a kind ofly comprise substrate 10 and oxide layer 9 based on electrostatic repulsion and the novel RFMEMS switch of gravitation combination drive, co-planar waveguide line is made up of earth connection and signal transmssion line, wherein the first earth connection 1 and the second earth connection 2 are for being coupled to ground radiofrequency signal when switch closes, the parallel dual-side being distributed in oxide layer 9 upper surface; Fixed drive electrode part is made up of first, second and third fixed electrode 4,5,6, and the parallel at certain interval and stationary distribution of three fixed electrode mutuals is at oxide layer 9 upper surface.Movable bridge film comprises and has flexible crossbeam 7b, and the two ends of described crossbeam 7b are supported on the first earth connection 1 and the second earth connection 2 respectively by the first brace summer 7a and the second brace summer 7c.Signal transmssion line is made up of five parts, be respectively input 3a, the first support arm 3b, intermediate arm 3c, the second support arm 3d, output 3e, they are interconnected, jointly transmit radiofrequency signal as holding wire, work in-process is also out processed respectively, the two ends of intermediate arm 3c are supported by the first support arm 3b and the second support arm 3d respectively and are suspended from the intermediate beam 7b of movable bridge film, input 3a and output 3e is fixed in oxide layer 9, as input and the output of radiofrequency signal.Dielectric layer 8 is deposited on the mid portion (being positioned at immediately below signal transmssion line) of movable bridge film upper surface; Material can be that silicon nitride or high dielectric constant material are as PZT etc.
Specifically, when the first fixed electrode 4 being positioned at the second fixed electrode 5 both sides and the second fixed electrode 6 apply identical positive voltage, the structure periphery that this positive voltage will form at first, second and third fixed electrode 4,5,6 and crossbeam 7b produces a non-uniform electric field, under the effect of this non-uniform electric field, the crossbeam 7 of movable bridge film will be subject to electrostatic repulsion upwards, signal transmssion line simultaneously for top applies positive voltage, form electrostatic field, within the scope of electrostatic field, movable bridge film is subject to electrostatic attraction upwards, under the combination drive of electrostatic repulsion and electrostatic attraction, the crossbeam 7 of movable bridge film upwards bends, thus the spacing of intermediate arm 3c and crossbeam 7b is reduced, until dielectric layer 8 is final and the lower surface of the intermediate arm 3c of top contacts with each other, along with the reduction of distance, electric capacity will increase, at this moment the radiofrequency signal on signal transmssion line will be coupled on the first earth connection 1 and the second earth connection 2, realize switch to close.On the contrary, when after the voltage removing first and third fixed electrode 4,6 and signal transmssion line, the crossbeam 7b of movable bridge film is under the effect of natural resiliency restoring force, get back to its initial position, along with the increase of the spacing of movable bridge film and signal transmssion line, electric capacity will reduce, and now radiofrequency signal would not be coupled to ground wire and gets on, but continue to continue transmission along signal transmssion line, switch disconnects.
As shown in Figure 2, signal transmssion line is made up of five parts, on the one hand in order to can description architecture better, also be processed respectively in reality processing on the other hand, the two ends of signal transmssion line and input 3a and output 3e are deposited on oxide layer 9 upper surface, first support arm 3b of signal transmssion line and the second support arm 3d is used for supporting intermediate arm 3c, and such intermediate arm 3c is suspended from the intermediate beam 7b of (striding across) movable bridge film; There is the fixed electrode of three parallel distributions the centre of oxide layer 9.
As shown in Figure 3, switch comprises substrate 10 and oxide layer 9, and oxide layer 9 is silicon dioxide; First earth connection 1 and the second earth connection 2 are positioned at the both sides of oxide layer 9 upper surface, for radiofrequency signal being guided to when switch closes ground; Movable bridge membrane material is gold, after switch is biased voltage, intermediate beam 7b is bent upwards stressed and finally make dielectric layer 8 contact with the intermediate arm 3c lower surface of signal transmssion line above it, radiofrequency signal afterwards on signal transmssion line will be introduced on the first earth connection 1 and the second earth connection 2 by movable bridge film, realizes switch and closes.When needs cut-off switch, as long as the voltage be originally added on fixed electrode and signal transmssion line is removed, electric field just can disappear, movable bridge film gets back to initial position under the effect of himself elastic restoring force afterwards, because the spacing of movable bridge film and holding wire increases, electric capacity diminishes, and the radiofrequency signal on holding wire would not be flow on the first ground connection ground wire 1 and the second earth connection 2 by bridge film, but continues to continue to transmit along signal transmssion line.
As shown in Figure 4, fixed drive electrode part comprises three parallel first, second and third fixed electrodes 4,5,6 being placed on oxide layer 9 upper surface, and its spacing is equal, and material is generally gold.During switch, only toward making alive on wherein first and third fixed electrode 4,6, the second fixed electrode 5 does not add any voltage, owing to being all fix over the substrate 10, can not be moved so stressed yet.
As shown in Figure 5, movable bridge film, across on the first earth connection 1 and the second earth connection 2, is the second fixed electrode 5 immediately below it.
As shown in Figure 6, during work, positive voltage is applied to first fixed electrode 4 of the right and left shown in figure and the 3rd fixed electrode 6, by the second fixed electrode 5 and movable bridge film ground connection, form non-uniform electric field and produce electrostatic repulsion; Apply positive voltage to the signal transmssion line of the top, produce electrostatic field, movable bridge film is subject to electrostatic attraction within the specific limits, so under the combination drive of electrostatic repulsion and electrostatic attraction, movable bridge film moves up.
Compared with the Capacitive RF MEMS switch of traditional dependence electrostatic attraction, the novel RFMEMS switch of the electrostatic repulsion that the present invention proposes and gravitation combination drive, operationally, although the movable bridge film contacted with each other and signal transmssion line have certain electrical potential difference, but, because electrostatic repulsion has shared the voltage burden of conventional electrostatic gravitation, below threshold value electrical potential difference between signal transmssion line and movable bridge film being reduced to greatest extent can produce charge accumulated phenomenon, thus inhibit the generation of charge accumulated phenomenon, improve switch reliability; Simultaneously compared to traditional Capacitive RF MEMS switch based on electrostatic repulsion, owing to introducing electrostatic attraction and electrostatic repulsion combination drive, effectively reduce and need to maintain the higher driving voltage needed for electrostatic repulsion, for the large-scale application of RFMEMS switch creates condition, greatly improve the commercial application value of switch.
In addition, compared to RFMEMS switch and traditional Capacitive RF MEMS switch based on electrostatic repulsion of conventional electrostatic gravitation, the construction of switch that the present invention proposes is simple, and cost is low and be easy to manufacture processing.
The foregoing is only one embodiment of the present of invention, is the further description to object of the present invention, structure and working principle.It should be noted, above are only specific embodiments of the invention, be not limited to the present invention, within the spirit and principles in the present invention, any amendment made, variation and improvement etc., all should be subject to protection of the present invention to all any technical staff.
Claims (7)
1. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive, it is characterized in that: comprise substrate (10), described substrate (10) is coated with oxide layer (9), the both sides of described oxide layer (9) upper surface are respectively arranged with the first earth connection (1) and the second earth connection (2), described first earth connection (1) and the second earth connection (2) keeping parallelism, between described first earth connection (1) and the second earth connection (2), erection has movable bridge film; Described oxide layer (9) upper surface middle part is arranged side by side first fixed electrode (4) consistent with movable bridge film direction, the second fixed electrode (5) and the 3rd fixed electrode (6), described second fixed electrode (5) is positioned at immediately below movable bridge film, and described first fixed electrode (4) and the 3rd fixed electrode (6) are positioned at the both sides of the second fixed electrode (5); Described oxide layer (9) upper surface is provided with consistent with earth connection direction and across the signal transmssion line of movable bridge film, on described movable bridge film, the position be positioned at below signal transmssion line is provided with dielectric layer (8).
2. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 1, it is characterized in that: described movable bridge film comprises and has flexible crossbeam (7b), and the two ends of described crossbeam (7b) are supported on the first earth connection (1) and the second earth connection (2) respectively by the first brace summer (7a) and the second brace summer (7c).
3. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 2, it is characterized in that: described signal transmssion line comprises and is fixed on input (3a) in oxide layer (9) and input (3e), and described input (3a) and output (3e) are supported with intermediate arm (3c) respectively by the first support arm (3b) and the second support arm (3d).
4. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 3, is characterized in that: the material of described dielectric layer (8) is silicon nitride or high dielectric constant material PZT.
5. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 4, is characterized in that: the material of described oxide layer (9) is silicon dioxide.
6. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 5, is characterized in that: the material of described crossbeam (7b) is gold.
7. the RF MEMS Switches based on electrostatic attraction and repulsion combination drive according to claim 6, it is characterized in that: described first fixed electrode (4), spacing between the second fixed electrode (5) and the 3rd fixed electrode (6) are equal, and described first fixed electrode (4), the second fixed electrode (5) and the 3rd fixed electrode (6) material are all gold.
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| CN104749768A (en) * | 2015-01-15 | 2015-07-01 | 深圳市盛喜路科技有限公司 | Hybrid drive MEMS tunable optical driver |
| CN112289645A (en) * | 2020-11-10 | 2021-01-29 | 汤玉生 | Single-pole four-throw integrated switch chip for realizing electrostatic driving of injected charges |
| CN113377132A (en) * | 2021-05-07 | 2021-09-10 | 青岛科技大学 | Intelligent glass plate of MEMS (micro-electromechanical system) micro-mirror array for tracking and condensing light |
| CN115387349A (en) * | 2022-08-11 | 2022-11-25 | 上海元易勘测设计有限公司 | Foundation pit supporting shaft force servo system |
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| CN101118819A (en) * | 2006-08-04 | 2008-02-06 | 精工爱普生株式会社 | MEMS switch and manufacturing method thereof |
| CN102543591A (en) * | 2010-12-27 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof |
| CN102623253A (en) * | 2012-04-11 | 2012-08-01 | 中国科学院半导体研究所 | Fast radio frequency micro-electromechanical system (RF MEMS) switch |
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| US24390A (en) * | 1859-06-14 | Omnibus-register | ||
| KR100726434B1 (en) * | 2005-07-29 | 2007-06-11 | 삼성전자주식회사 | Vertical comb actuator radio frequency micro-electro- mechanical systerms swictch |
| JP2009252598A (en) * | 2008-04-08 | 2009-10-29 | Panasonic Electric Works Co Ltd | Mems switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101118819A (en) * | 2006-08-04 | 2008-02-06 | 精工爱普生株式会社 | MEMS switch and manufacturing method thereof |
| CN102543591A (en) * | 2010-12-27 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof |
| CN102623253A (en) * | 2012-04-11 | 2012-08-01 | 中国科学院半导体研究所 | Fast radio frequency micro-electromechanical system (RF MEMS) switch |
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