CN104183762A - Organic light emission diode, display screen and terminal - Google Patents
Organic light emission diode, display screen and terminal Download PDFInfo
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- CN104183762A CN104183762A CN201310193520.4A CN201310193520A CN104183762A CN 104183762 A CN104183762 A CN 104183762A CN 201310193520 A CN201310193520 A CN 201310193520A CN 104183762 A CN104183762 A CN 104183762A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
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Abstract
The invention discloses an organic light emission diode, a display screen and a terminal. The organic light emission diode comprises a light-transmitting substrate, an anode layer, an organic function layer and a cathode layer which are in stack combination in sequence. The cathode layer comprises a semi-permeable metal layer, a dielectric layer having light permeability and conductivity, and a metal reflecting layer which are in stack combination in sequence, wherein the semi-permeable metal layer and the organic function layer are in stack combination; and the dielectric layer material is LaB6. The cathode of the organic light emission diode reduces reflectivity of the cathode of the organic light emission diode on light effectively, and contrast ratio is improved. The display screen comprising the organic light emission diode and the terminal provided with the display screen have high contrast ratio, and the displayed pictures are clear.
Description
Technical field
The invention belongs to electric light source technology field, relate to specifically a kind of Organnic electroluminescent device, display screen and terminal thereof.
Background technology
Organic electroluminescence device (Organic Light Emission Diode, hereinafter to be referred as OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is that the luminous organic material of making one deck tens nanometer thickness on ito glass is made luminescent layer, and there is the metal electrode of one deck low work function luminescent layer top.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
The advantages such as OLED has that luminous efficiency is high, material range of choice is wide, driving voltage is low, entirely solidifies active illuminating, light, thin, have high definition, wide viewing angle, fast response time, low cost and the advantage such as bright in luster simultaneously, a kind of Display Technique and light source that has potentiality, meet the development trend that information age mobile communication and information show, and the requirement of green lighting technique, therefore, by insider, thought to be most likely at the device of new generation that occupies dominance on following illumination and display device market.As a brand-new illumination and Display Technique, the ten years development in the past of OLED technology is swift and violent, has obtained huge achievement.Because the whole world is increasing, throw light on and show that producer drops into research and development one after another, having promoted greatly the industrialization process of OLED, making the growth rate of OLED industry surprising, having arrived the eve of scale of mass production at present.
But the negative electrode of existing OLED device is generally the metallic cathode material that uses high reflectance, particularly, the metallic cathode of the high reflectance that the metallic cathode material of this high reflectance is prepared into has the reflectivity that surpasses 90% in visible ray section, so this high reflectance negative electrode like this brings obstruction but to the application of OLED on display device.This be because, as display device, high-contrast is the long-term pursuits of people, requirement to Display Contrast is higher, if during the application by the OLED device of existing high reflectance negative electrode on display device, under solar light irradiation, due to the high reflectance effect of its high reflectance negative electrode, make the contrast of display device low, the content of demonstration cannot be seen clearly.Therefore,, when OLED device is applied in display, the negative electrode reflectivity that how to reduce OLED device is technical barrier to be solved.
Summary of the invention
The object of the invention is to overcome the above-mentioned deficiency of prior art, provide a kind of negative electrode to there is the Organnic electroluminescent device of antiradar reflectivity.
The display screen that provides a kind of contrast high is provided.
Another object of the present invention is to provide a kind of terminal that contains above-mentioned display screen.
In order to realize foregoing invention object, technical scheme of the present invention is as follows:
A kind of Organnic electroluminescent device, comprise the transparent substrates, anode layer, organic function layer and the cathode layer that stack gradually combination, described organic function layer is included in luminescent layer luminous under the driving of additional power source, described cathode layer comprise stack gradually combination semi-transparent metal level, have the dielectric layer of photopermeability and conductivity, metallic reflector, wherein, described semi-transparent metal level and the stacked combination of organic function layer; Described dielectric layer material is LaB
6.
And a kind of display screen, comprises display module and for controlling the control module of display module, wherein said display module contains Organnic electroluminescent device described above.
And, a kind of terminal that is provided with display screen, the display screen of described terminal is the above-mentioned display that contains Organnic electroluminescent device.
Above-mentioned Organnic electroluminescent device by negative electrode is arranged to stack gradually combination semi-transparent metal level, have the dielectric layer of photopermeability and conductivity, metallic reflector structure, effectively reduce the negative electrode of this Organnic electroluminescent device to reflection of light rate, improved its contrast.Wherein, this semi-transparent metal level can to by from anode tap incident light the effect of semi-transflective reflective; Dielectric layer can not only make electronic injection, the more important thing is and semi-transparent metal layer reflection light and the catoptrical single spin-echo of metallic reflector can also be reached to the effect that interference disappears mutually, has effectively reduced the total reflection of light, realizes low reflectivity.
Above-mentioned display screen is owing to containing above-mentioned Organnic electroluminescent device, so it has high-contrast, and its display frame is clear.Due to the display screen that is provided with the terminal of display screen and contains this high-contrast, so the display screen picture of this terminal is clear.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention Organnic electroluminescent device structural representation;
Fig. 2 is another preferred structure schematic diagram of embodiment of the present invention Organnic electroluminescent device;
Fig. 3 is embodiment of the present invention Organnic electroluminescent device preparation method's schematic flow sheet;
Fig. 4 is the resolution chart of Organnic electroluminescent device reflectance spectrum in the Organnic electroluminescent device of embodiment 1 preparation and comparison example 1.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with embodiment and accompanying drawing, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Organic electroluminescent pixel contrast=(environmental light brightness of device luminosity (opening)+device reflection)/(environmental light brightness of device luminosity (pass)+device reflection), according to these computational methods, in the OLED of transparent anode device, one of method that improves contrast is exactly to reduce the light reflection of device to environment, namely reduces the reflectivity of reflecting electrode.
Based on above-mentioned theory, the embodiment of the present invention adopts the approach that reduces negative electrode reflectivity to improve organic electroluminescent pixel contrast.Therefore, the Organnic electroluminescent device that the embodiment of the present invention provides a kind of negative electrode to have antiradar reflectivity, its structure is as shown in Figure 1 to Figure 2.This Organnic electroluminescent device comprises substrate 1, anode layer 2, organic function layer 3 and the cathode layer 4 that stacks gradually combination.
Particularly, cathode layer 4 comprise stack gradually combination semi-transparent metal level 41, there is dielectric layer 42, metallic reflector 43 to photopermeability and conductivity.Semi-transparent metal level 41 in the cathode layer 4 of this structure can to from anode layer 2 end incident lights the effect of semi-transflective reflective, dielectric layer 42 can not only make electronic injection, the more important thing is and can also make semi-transparent metal level 41 reverberation and the catoptrical single spin-echo of metallic reflector 43, reach the effect that interference disappears mutually, effectively reduce the total reflection of light, realized low reflectivity.Therefore, when this Organnic electroluminescent device is connected to additional power source, the negative pole of additional power source is connected on metallic reflector 43, and its positive pole is connected on anode layer 2.Particularly, from organic function layer 3, the light reflection of the cathode layer 4 of this structure of directive and refraction are as shown in Fig. 1,2, ambient light a is during from outside incident, on semi-transparent metal level 41 surfaces, there is reflection and refraction, form reflection ray b, refracted ray c sees through dielectric layer 42 and arrives metallic reflector 43 surfaces, also reflect, form reflection ray d, and make reflection ray b become the interference of light to disappear mutually with reflection ray D-shaped, slacken the reverberation that cathode layer 4 produces, thereby effectively reduce the reflectivity of cathode layer 4.
Wherein, this semi-transparent metal level 41 and the stacked combination of organic function layer 3, this semi-transparent metal level 41 can make the light that organic function layer 3 transmittings come that the reflection of part permeation parts occurs at its interface.For reflection and the transmitance of better light regulating, as preferred embodiment, the thickness of this semi-transparent metal level 41 is 5～10nm, and its thickness can also be adjusted flexibly according to the difference of material.As another preferred embodiment, above-mentioned semi-transparent metal level 41 metal materials are any or both the above alloys in Al, Ag, Au.Should be appreciated that, as long as can realize other thickness of this semi-transparent metal level 41 part permeation parts reflections and other, can do cathodic metal material and also belong to the framework of the present definition.
This dielectric layer 42 is arranged between semi-transparent metal level 41 and metallic reflector 43, the single spin-echo of the light of two-layer reflection can be reached to the effect that interference disappears mutually, has effectively reduced the total reflection of light.And the dielectric layer 42 of conductivity is as a part for negative electrode 4, and therefore, these dielectric layer 42 materials not only must have light permeability, also must have electronic injection, transmittability and conductivity.Dielectric layer 42 materials are LaB
6(lanthanum hexaboride), selects LaB
6make dielectric layer 42 and can not only effectively give the photopermeability of dielectric layer 42 excellences, the maximized metallic reflector 43 that is passed to of light seeing through from semi-transparent metal level 41 is also reflected, the effect offseting to improve semi-transparent metal level 41 and metallic reflector 43 reverberation, electronic injection performance and the electric conductivity of effectively giving dielectric layer 42 excellences be can also give, thereby luminous intensity and the high-contrast of embodiment of the present invention Organnic electroluminescent device excellence given.
By regulating the thickness of dielectric layer 42, can effectively improve the effect that semi-transparent metal level 41 and metallic reflector 43 reverberation offset.Therefore,, as preferred embodiment, material is LaB
6the thickness of this dielectric layer 42 be 60nm～100nm, in specific embodiment, its thickness can be 60nm, 70nm, 80nm, 90nm, 100nm etc.
The object that this metallic reflector 43 arranges is that the light that will come from dielectric layer 42 transmission reflect at its interface, and the light that this reverberation is occurred to reflect with semi-transparent metal level 41 interfaces after by the transmission of dielectric layer 42 cancels each other, to reduce the reflectivity of cathode layer 4.As preferred embodiment, the thickness of this metallic reflector 43 is 70～200nm.As another preferred embodiment, above-mentioned metallic reflector 43 metal materials are at least one the alloy in any or both alloys or Mg and Al, the Ag in Al, Ag.Should be appreciated that, as long as can realize other thickness of reflection action of this metallic reflector 43 and other, can do cathodic metal material and also belong to the framework of the present definition, as disregard cost, the thickness of this metallic reflector 43 can also be more than 200nm.
As another preferred embodiment of above-mentioned Organnic electroluminescent device, the thickness of above-mentioned semi-transparent metal level 41 is 5～10nm, and the thickness of dielectric layer 42 is 60～100nm, and the thickness of metallic reflector 43 is 70～200nm.The combination of each layer thickness in the preferred embodiment, the better effects if that can make the interference of light of semi-transparent metal level 41 and metallic reflector 43 reflections disappear mutually, makes the reflectivity that cathode layer 4 is lower.
As a preferred embodiment again of above-mentioned Organnic electroluminescent device, above-mentioned semi-transparent metal level 41 materials are any or both the above alloys in Al, Ag, Au, and dielectric layer 42 materials are LaB
6, metallic reflector 43 materials are at least one the alloy in any or both alloys or Mg and Al, the Ag in Al, Ag.The combination of each layer of selected material in the preferred embodiment, gives reflectivity and electronic injection performance that cathode layer 4 is lower.
As the another preferred embodiment of above-mentioned Organnic electroluminescent device, above-mentioned semi-transparent metal level 41 materials are any or both the above alloys in Al, Ag, Au, and its thickness is 5～10nm; Dielectric layer 42 materials are LaB
6, and its thickness is 60～100nm; Metallic reflector 43 materials are at least one the alloy in any or both alloys or Mg and Al, the Ag in Al, Ag, and its thickness is 70～200nm.The combination of each layer thickness and material in the preferred embodiment, the better effects if that can make the interference of light of semi-transparent metal level 41 and metallic reflector 43 reflections disappear mutually, makes cathode layer 4 have lower reflectivity and excellent electronic injection performance.
Organic function layer 3 in above-mentioned Organnic electroluminescent device embodiment comprises hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, the electron injecting layer 35 that stacks gradually combination, and the stacked combination in the relative surface of face that combines with substrate layer 1 of hole injection layer 31 and anode layer 2, electron injecting layer 35 and the stacked combination of cathode layer 4, as shown in Figure 1.
In specific embodiment, above-mentioned hole injection layer 31 materials can be ZnPc (Phthalocyanine Zinc), CuPc(CuPc), at least one in VOPc (ranadylic phthalocyanine), TiOPc (TiOPc).Certainly, these hole injection layer 31 materials can also be the conventional other materials in this area, as WO
3, VO
x, WO
xor MoO
3deng oxide, or the dopant mixture of inorganic hole injection layer material and organic hole implanted layer material.The thickness of hole injection layer 31 also can arrange according to the thickness of this area routine.The setting of this hole injection layer 31, can effectively strengthen the ohmic contact of 2 of itself and anode layers, has strengthened electric conductivity, improves the hole injectability of anode layer 2 ends.Just because of this, this hole injection layer 31 can not arrange according to the actual needs yet, that is to say, hole transmission layer 32 can be directly and the direct stacked combination of anode layer 2.
Above-mentioned hole transmission layer 32 materials can be NPB (N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines), TPD (N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-1,1'-biphenyl-4,4'-diamines), MeO-TPD (N, N, N', N '-tetramethoxy phenyl)-benzidine), MeO-Sprio-TPD(2, the two (N of 7-, N-bis-(4-methoxyphenyl) amino) at least one-9,9-spiral shell two fluorenes).Certainly, these hole transmission layer 32 materials can also be the conventional other materials in this area, as 4,4', and 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) etc.The thickness of hole transmission layer 32 also can arrange according to the thickness of this area routine.
Above-mentioned luminescent layer 33 materials can be guest materials and material of main part dopant mixture.Wherein, guest materials is luminescent material, it comprises 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium (Ir (MDQ) 2 (acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3), three (2-phenylpyridines) close at least one in iridium (Ir (ppy) 3), material of main part comprises 4,4'-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, at least one in 4'-diamines (NPB).Main, guest materials can carry out according to the needs of actual production and application compound flexibly, and the mass ratio of guest materials and material of main part can be 1～10:100.
In addition, these luminescent layer 33 materials can also be selected fluorescent material 4,4'-bis-(2,2-diphenylethyllene)-1,1'-biphenyl (DPVBi), 4,4'-two [4-(di-p-tolyl is amino) styryl] biphenyl (DPAVBi), 5,6, at least one in the materials such as 11,12-tetraphenyl naphthonaphthalene (Rubrene), dimethylquinacridone (DMQA).The thickness of this luminescent layer 33 also can arrange according to the thickness of this area routine.
Above-mentioned electron transfer layer 34 materials can be 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), (oxine)-aluminium (Alq
3), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP), 1,2, in 4-triazole derivative (TAZ) at least one.Certainly, electron transfer layer 34 materials can also be other electron transport materials well known in the art, and its thickness also can adopt the conventional thickness in this area.
Above-mentioned electron injecting layer 35 materials can LiF, CsF, NaF, MgF
2deng at least one etc. alkali-metal halide, certainly, these electron injecting layer 35 materials can also be selected the alkali-metal halide such as at least one in lithium iodide, KI, sodium iodide, cesium iodide, rubidium iodide.The thickness of electron injecting layer 35 also can arrange according to the thickness of this area routine.The arranging of this electron injecting layer 35 can effectively strengthen the ohmic contact between itself and cathode layer 4, strengthened electric conductivity, further improve the electronic injection ability of cathode layer 4 ends, with further equilibrium carrier, control recombination region, in luminescent layer, increase exciton amount, obtained desirable luminosity and luminous efficiency.Just because of this, this electron injecting layer 35 can not arrange according to the actual needs yet, that is to say, electron transfer layer 34 can be directly and the direct stacked combination of cathode layer 4.
In further preferred embodiment, on the basis of organic function layer 3 as shown in Figure 1, above-mentioned organic function layer 3 can also arrange electronic barrier layer 36 and hole blocking layer 37, as shown in Figure 2.Wherein, this electronic barrier layer 36 is stacked to be combined between hole transmission layer 32 and luminescent layer 33, and hole blocking layer 37 is stacked to be combined between luminescent layer 33 and electron transfer layer 34.Arranging of this electronic barrier layer 36 can stop the electronics that does not form exciton in luminescent layer 33 as much as possible and be trapped in luminescent layer 33, arranging of hole blocking layer 37 can stop the hole that does not form exciton in luminescent layer 33 as much as possible and be trapped in luminescent layer 33, to improve electronics and the hole meeting rate in luminescent layer 33, to improve both exciton amounts compound and that form, and exciton energy is passed to luminescent material, thereby the electronics of excitation light-emitting material is from ground state transition to excitation state, excited energy passes through Radiation-induced deactivation, produce photon, discharge luminous energy, to reach the object of the luminous intensity that strengthens luminescent layer 33.Certainly, this electronic barrier layer 36 and hole blocking layer 37 can according to the situation of actual production and application need to select a setting, the material that it is selected and thickness can arrange according to the conventional material in this area and conventional thickness.
Above-mentioned anode layer 2 materials are transparent conductive oxide.This transparent conductive oxide is preferably at least one in tin oxide film (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), gallium zinc oxide (GZO).This preferred transparent conductive oxide has excellent light transmission rate, can effectively improve the light emission rate of this Organnic electroluminescent device, and in addition, this preferred transparent conductive oxide electric conductivity is excellent.These anode layer 2 thickness are preferably 70～200nm.Certainly, the material of this anode layer 2 and thickness can also be other materials and the thickness of this area routine.
The material of aforesaid substrate 1 is transparent glass, transparent polymer film material etc., as simple glass, polymer thin-film material substrate etc.Certainly, the material of substrate 1 also can adopt this area other materials to substitute.The thickness of substrate 1 also can adopt the conventional thickness in this area or select flexibly according to the requirement of application.
From the above, above-mentioned Organnic electroluminescent device by negative electrode is arranged to stack gradually combination semi-transparent metal level 41, there are dielectric layer 42, metallic reflector 43 structures to photopermeability and conductivity, by the light reflection negative function of cathode layer 4, thereby effectively reduce the negative electrode of this Organnic electroluminescent device to reflection of light rate, improved its contrast.In addition, by selecting material and the thickness of semi-transparent metal level 41, dielectric layer 42 and metallic reflector 43, can further reduce the negative electrode of above-mentioned Organnic electroluminescent device to reflection of light rate, improve its contrast.
Correspondingly, so above-described embodiment Organnic electroluminescent device preparation method can be according to showing as Fig. 3.Technological process preparation, simultaneously referring to Fig. 1～2, its preparation method comprises the steps:
S01., substrate 1 is provided;
S02. prepare anode layer 2: in vacuum systems, transparent conductive oxide magnetron sputtering is prepared to anode layer 2 on substrate 1 one surfaces of step S01;
S03. prepare organic function layer 3: at step S02, prepare anode layer 2 with light-transmissive substrates layer 1 the combine relative surface of face evaporation hole injection layer material, hole transport layer material, luminescent layer material, electric transmission layer material and electronic injection layer material successively, prepare respectively hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, electron injecting layer 35, form organic function layer 3;
S04. prepare cathode layer 4: in vacuum coating system, at the organic function layer 3 outer surfaces successively semi-transparent metal layer material of evaporation, there is the dielectric layer material LaB to photopermeability and conductivity
6with metallic reflection layer material, prepare respectively semi-transparent metal level 41, dielectric layer 42 and metallic reflector 43, form cathode layer 4.
Particularly, in above-mentioned S01 step, the structure of substrate 1, material and specification as described above, for length, do not repeat them here.In addition, in this S01 step, also comprise the treatment step in early stage to substrate 1, as cleaned the step of decontamination, the step of specifically cleaning decontamination is as the step 1 of embodiment 1 below.
In above-mentioned steps S02, transparent conductive oxide and anode layer 2 thickness all as described above, do not repeat them here.Preferably, to become the sputtering technology condition of anode layer 2 be that base vacuum degree is 1 * 10 to sputter transparent conductive oxide
-5～1 * 10
-3pa, the evaporation rate of magnetron sputtering is 0.2～2nm/s.Certainly, the process conditions of preparing anode layer 2 also can be carried out according to existing processing parameter setting.
Preferably, before carrying out following step S03, also comprise the anode layer 2 in step S02 is carried out to plasma treatment: the substrate that this is coated with to anode layer 2 is placed in plasma processing chamber, carries out plasma treatment.This plasma treatment condition adopts the process conditions of this area routine.After plasma treatment, anode layer 2 can effectively improve anode work function, reduces the injection barrier in hole.
Certainly, also can directly select and be coated with anode as being coated with the transparent substrates of ITO, the transparent substrates that this is coated with to anode is carried out the preliminary treatment in early stage, as carried out following step S03 after the PROCESS FOR TREATMENT such as cleaning, plasma treatment.
In above-mentioned steps S03, the material that evaporation hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, electron injecting layer 35 are selected and even thickness are as described above.The operating pressure that each layer of involved process conditions of evaporation are preferably vacuum moulding machine film forming is 1 * 10
-5～1 * 10
-3pa, the evaporation rate of organic material is 0.01～1nm/s.
When organic function layer 3 as described above, it comprises the hole injection layer 31 that stacks gradually combination, hole transmission layer 32, electronic barrier layer 36, luminescent layer 33, hole blocking layer 37, electron transfer layer 34, during electron injecting layer 35, or it comprises the hole transmission layer 32 that stacks gradually combination, electronic barrier layer 36, luminescent layer 33, hole blocking layer 37, during electron transfer layer 34, or it comprises the hole transmission layer 32 that stacks gradually combination, luminescent layer 33, during electron transfer layer 34, the method of preparing organic function layer 3 is in this each layer of structure of anode layer 2 outer surfaces successively evaporation.
In above-mentioned steps S04, the semi-transparent metal level 41 of evaporation, there is the selected material of dielectric layer 42, metallic reflector 43 to photopermeability and conductivity and even thickness as described above.The operating pressure that each layer of involved process conditions of evaporation are preferably vacuum moulding machine film forming is 1 * 10
-5～1 * 10
-3pa, the evaporation rate of organic material is 0.01～1nm/s.
Certainly, it is also understood that the preparation method about embodiment of the present invention Organnic electroluminescent device also should comprise the method for packing that this Organnic electroluminescent device is follow-up.
Correspondingly, the embodiment of the present invention also provides a kind of display screen, and it comprises display module and for controlling the control module of display module, certainly also comprises other necessary modules of application and display screen.Wherein, this display module comprises Organnic electroluminescent device described above, and particularly, in display module, Organnic electroluminescent device mentioned above is arranged according to matrix.Because this display screen contains above-mentioned Organnic electroluminescent device, so it has high-contrast, and its display frame is clear.
Correspondingly, the embodiment of the present invention further provides a kind of terminal that is provided with display screen, and the display screen of this terminal is the above-mentioned display that contains Organnic electroluminescent device.Certainly, should be appreciated that, different according to the type of this terminal, this terminal, except containing display screen mentioned above, also contains other necessary modules or/and device.Therefore, this terminal can be non-portable terminal and portable terminal.Non-portable terminal can be large-scale household electrical appliances (as television set, desktop computer display, the air-conditioning that is provided with display screen, washing machine etc.), factory lathe of being provided with display screen etc.; Portable terminal can be mobile phone, panel computer, notebook, personal digital assistant, game machine and e-book etc.Like this, because the display screen of this terminal is the above-mentioned display screen that contains Organnic electroluminescent device, so the display screen contrast of electronic device is high, and picture is clear.
Certainly, Organnic electroluminescent device mentioned above can also be applied in characteristic lighting field, as applied in requiring the lighting field that reflectivity is low.As the embodiment of the present invention also be can be applicable to illumination panel, at specific lighting condition, do not need illumination panel to have mirror-reflection particularly, the organic electroluminescence device of low reflection provided by the invention just can meet this demand.
By a plurality of embodiment, illustrate the aspects such as above-mentioned Organnic electroluminescent device below.
Embodiment 1
That a kind of negative electrode has an antiradar reflectivity and substrate is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/anode ITO (100nm)/hole injection layer (CuPc, 10nm)/hole transmission layer (NPB, 30nm)/luminescent layer (DPVBi, 10nm)/electron transfer layer (TPBi, 30nm)/electron injecting layer (LiF, 0.5nm)/Al (5nm)/LaB
6(60nm)/Ag (70nm).Wherein, Al (5nm)/LaB
6(60nm)/Ag (70nm) forms negative electrode.
Its preparation method is as follows:
(1) in vacuum degree, be 10
-4in the vacuum coating system of Pa, prepare, glass substrate is cleaned with cleaning agent, then use distilled water, acetone is ultrasonic cleaning successively, then in coating system;
(2) on substrate, prepare anode, material is ITO, and thickness is 100nm;
(3) at anode surface, prepare luminescence unit and be followed successively by hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, forms organic function layer, material is followed successively by CuPc, NPB, DPVBi, TPBi, LiF, and thickness is followed successively by 10nm, 30nm, 10nm, 30nm, 0.5nm;
(4) at organic function layer outer surface, prepare black electrode layers, prepare successively Al layer, LaB
6layer, Ag layer; Thickness is followed successively by 5nm, 60nm, 70nm;
(5), after preparation, adopt glass cover-plate to encapsulate.
Embodiment 2
That a kind of negative electrode has an antiradar reflectivity and substrate is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/anode IZO (200nm)/hole injection layer (ZnPc, 15nm)/hole transmission layer (TPD, 30nm)/luminescent layer (Ir (ppy)
3: TPBi (10%), 10nm)/electron transfer layer (Bphen, 40nm)/electron injecting layer (CsF, 1nm)/Ag (10nm)/LaB
6(100nm)/Al (120nm).Wherein, Ag (10nm)/LaB
6(100nm)/Al (120nm) forms negative electrode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Embodiment 3
That a kind of negative electrode has an antiradar reflectivity and substrate is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/anode A ZO (100nm)/hole injection layer (TiOPc, 20nm)/hole transmission layer (MeO-Sprio-TPD, 40nm)/luminescent layer (DCJTB:Alq
3(1%), 15nm)/electron transfer layer (PBD, 50nm)/electron injecting layer (NaF, 0.8nm)/Au (8nm)/LaB
6(80nm)/Mg-Ag (200nm).Wherein, Au (8nm)/LaB
6(80nm)/Mg-Ag (200nm) forms negative electrode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Embodiment 4
That a kind of negative electrode has an antiradar reflectivity and substrate is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/anode GZO (100nm)/hole injection layer (VOPc, 15nm)/hole transmission layer (MeO-TPD, 35nm)/luminescent layer (Ir (piq)
3: NPB (10%), 12nm)/electron transfer layer (PBD, 40nm)/electron injecting layer (MgF
2, 0.5nm)/Al (6nm)/LaB
6(70nm)/Mg-Al (100nm).Wherein, Al (6nm)/LaB
6(70nm)/Mg-Al (100nm) forms negative electrode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Comparison example 1
A kind of substrate is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/anode ITO (100nm)/hole injection layer (CuPc, 10nm)/hole transmission layer (NPB, 30nm)/luminescent layer (DPVBi, 10nm)/electron transfer layer (TPBi, 30nm)/electron injecting layer (LiF, 0.5nm)/Ag (70nm).Wherein, Ag (70nm) is negative electrode.
Organnic electroluminescent device carries out correlated performance test
When the Organnic electroluminescent device of existing cathode construction in the Organnic electroluminescent device of above-described embodiment 1 to embodiment 4 preparation and comparison example 1 is not lighted, do not carry out the test of reflectivity and reflectance spectrum, test result is as shown in following table 1 and accompanying drawing 4.
Table 1
From above-mentioned table 1 by reference to the accompanying drawings 4, the Organnic electroluminescent device of preparing in above-described embodiment 1-4 is owing to adopting semi-transparent metal level/have to form black negative electrode to the structure of the dielectric layer/metallic reflector of photopermeability and conductivity, by the synergy of three layers, make semi-transparent metal layer reflection light and the catoptrical single spin-echo of metallic reflector, reach the effect that interference disappears mutually, effectively reduce the total reflection of light, realized low reflectivity.The reflectivity of Organnic electroluminescent device prepared by embodiment 1-4 is compared with Organnic electroluminescent device in comparison example 1, the reflectivity of Organnic electroluminescent device prepared by embodiment 1-4 is reduced to 23.9%, well below the reflectivity 87.5% of Organnic electroluminescent device in comparison example 1.Hence one can see that, and Organnic electroluminescent device prepared by embodiment 1-4 is during as display screen, and its contrast is the contrast when Organnic electroluminescent device is as display screen in comparison example 1 far away.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an Organnic electroluminescent device, comprise the transparent substrates, anode layer, organic function layer and the cathode layer that stack gradually combination, described organic function layer is included in luminescent layer luminous under the driving of additional power source, it is characterized in that: described cathode layer comprise stack gradually combination semi-transparent metal level, have the dielectric layer of photopermeability and conductivity, metallic reflector, wherein, described semi-transparent metal level and the stacked combination of organic function layer; Described dielectric layer material is LaB
6.
2. Organnic electroluminescent device as claimed in claim 1, is characterized in that: the thickness of described dielectric layer is 60nm～100nm.
3. Organnic electroluminescent device as claimed in claim 1, is characterized in that: the thickness of described semi-transparent metal level is 5nm～10nm.
4. the Organnic electroluminescent device as described in claim 1 or 3, is characterized in that: described semi-transparent metal level is any or both the above alloys in Al, Ag, Au.
5. Organnic electroluminescent device as claimed in claim 1, is characterized in that: the thickness of described metallic reflector is 70～200nm.
6. the Organnic electroluminescent device as described in claim 1 or 5, is characterized in that: described metallic reflector is at least one the alloy in any or both alloys or Mg and Al, the Ag in Al, Ag.
7. Organnic electroluminescent device as claimed in claim 1, is characterized in that:
The thickness of described semi-transparent metal level is 5～10nm;
The thickness of described dielectric layer is 60～100nm;
The thickness of described metallic reflector is 70～200nm.
8. the Organnic electroluminescent device as described in claim 1 or 7, is characterized in that:
Described semi-transparent metal layer material is any or both the above alloys in Al, Ag, Au;
Described metallic reflection layer material is at least one the alloy in any or both alloys or Mg and Al, the Ag in Al, Ag.
9. a display screen, comprises display module and for controlling the control module of display module, it is characterized in that: described display module contains just like the Organnic electroluminescent device described in claim 1～8 any one.
10. be provided with a terminal for display screen, the display screen of described terminal is display screen as claimed in claim 9.
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Application publication date: 20141203 |