CN104185689B - Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof - Google Patents
Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof Download PDFInfo
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- CN104185689B CN104185689B CN201280038918.4A CN201280038918A CN104185689B CN 104185689 B CN104185689 B CN 104185689B CN 201280038918 A CN201280038918 A CN 201280038918A CN 104185689 B CN104185689 B CN 104185689B
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- abrasive element
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- ultrahard abrasive
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- 239000000463 material Substances 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 74
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 69
- 239000010432 diamond Substances 0.000 title claims abstract description 69
- 230000015572 biosynthetic process Effects 0.000 title claims description 8
- 238000000429 assembly Methods 0.000 title abstract 2
- 230000000712 assembly Effects 0.000 title abstract 2
- 238000001764 infiltration Methods 0.000 claims abstract description 93
- 230000008595 infiltration Effects 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims description 137
- 239000003795 chemical substances by application Substances 0.000 claims description 91
- 239000000843 powder Substances 0.000 claims description 63
- 239000003054 catalyst Substances 0.000 claims description 34
- 238000002386 leaching Methods 0.000 claims description 32
- 238000005520 cutting process Methods 0.000 claims description 30
- 239000002253 acid Substances 0.000 claims description 15
- 238000005553 drilling Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000011435 rock Substances 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical group [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 150000001722 carbon compounds Chemical class 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000011148 porous material Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 24
- 239000011230 binding agent Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 15
- 235000019580 granularity Nutrition 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000007731 hot pressing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003863 metallic catalyst Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005087 graphitization Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 244000239634 longleaf box Species 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 206010011376 Crepitations Diseases 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008275 binding mechanism Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000626 liquid-phase infiltration Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003961 penetration enhancing agent Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
- E21B10/56—Button-type inserts
- E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B10/573—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
- E21B10/5735—Interface between the substrate and the cutting element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2204/00—End product comprising different layers, coatings or parts of cermet
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Geology (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Earth Drilling (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The disclosure provides a super abrasive element containing a substantially catalyst-free thermally stable polycrystalline diamond (TSP) body having pores and a contact surface, a base adjacent the contact surface of the TSP body; and an infiltrant material infiltrated in the base and in the pores of the TSP body at the contact surface. The disclosure additionally provides earth-boring drill bits and other devices containing such super abrasive elements. The disclosure further provides methods and mold assemblies for forming such super abrasive elements via infiltration and hot press methods
Description
Technical field
The present invention relates to include the ultrahard abrasive element of super hard abrasive (super abrasive) body, the super hard abrasive body
(such as heat stability polycrystalline diamond (TSP) body) is combined by infiltration agent material with substrate.In more specifically embodiment,
The TSP bodies can be substantially free of infiltration agent material, only there is a small amount of impregnant in the TSP body near surfaces with substrate contact
Material.In some embodiments, the infiltration agent material can also infiltrate through substrate, and the function of binding agent is played wherein.This
Invention is directed to form the method for ultrahard abrasive element, and the ultrahard abrasive element is included and combined with substrate using infiltration agent material
TSP bodies.In specific embodiment, methods described can include forming ultrahard abrasive element in the following manner:
Simultaneously in the mould comprising TSP, in the case where there is infiltration agent material substrate is formed.
Background technology
The component of various commercial plants is frequently used for extreme condition, for example, contact with the high impact-resistant on abrasiveness surface.Example
Such as, run into during subterranean well of this extreme condition generally for the purpose of extracting or exploiting by oil.Diamond has Zhuo
More incomparable wearability, is the most effective material for the earth drilling well with the similar activity for making component touch extreme condition.Buddha's warrior attendant
Stone is extremely hard, can transfer away heat from the contact point of abrasive surface, and can be provided in this case other
Advantage.
Due to the random distribution of polycrystalline diamond crystal, diamond toughness increasing compared with single-crystal diamond of polycrystalline form
Plus, this avoids the specific cutting planes found in single-crystal diamond crystals.Therefore, in many DRILLING APPLICATIONs or other are extreme
Under the conditions of, polycrystalline diamond is typically preferred diamond form.If the surface layer of device element is (particularly more by diamond
The form of diamond (PCD) compacting body) to make or be made up of other super hard abrasive materials, then described device element is at these
Under the conditions of have longer service life.
Element for harsh conditions can include the PCD layer combined with base material.Traditional PCD production technologies are very strict
And it is prohibitively expensive.The technique is referred to as directly " growth " polycrystalline diamond in substrate carbides, to form polycrystalline diamond
Compound compacting body.The technique is related to mix with catalyst binder, the carbide sheet of bonding (cemented) and gold
Hard rock granule is placed in extruder container, and applies the pressures cycle of hyperpressure and temperature conditionss to it.Need to little gold
Hard rock granule applies ultra-high temperature and pressure and could form the polycrystalline diamond body of integration.Gained polycrystalline diamond body also with
Carbide sheet is intimately associated, and causes the compound compacting body of the polycrystalline diamond layer form combined closely with substrate carbides.
The problem of PCD is from the growth for promoting polycrystalline diamond using cobalt or other metallic catalyst/adhesive compositions
Process.After crystal growth is completed, the catalyst/binding agent is retained in the hole of polycrystalline diamond body.Because cobalt or its
His thermal coefficient of expansion of metallic catalyst/binding agent is higher than diamond, when the compound compacting body for example (passes through in soldering processes
This technique is connected carbide portion with other materials) or when heating in actual applications, the metallic catalyst/binding agent
Expansion rate can be higher than diamond.As a result, when the temperature higher than critical level is applied to PCD, the catalyst/binding agent meeting of expansion
Crackle is caused in whole polycrystalline diamond structure.These crackles can weaken the intensity of PCD, and can ultimately cause destruction or event
Barrier (failure).
Affect or other influences due to there are these, a part of the people generally from PCD layer is (attached particularly in working surface
Near part) middle removing catalyst.Although there is also other techniques using the acid or electrolysis and liquid metal technology for substituting,
The most common technique for being removing catalyst is to use strong acid baths.Generally, it is referred to as from the way that PCD layer removes catalyst using acid system
Leach (leaching).Acid system is leached generally to be occurred first in the outer surface of PCD layer, and is extended internally and carried out.Therefore, comprising Jing
The characteristics of traditional element Jing of the PCD layer of leaching operation often shows is to have leached into away from its surface depth part.It is most of
The PCD (region comprising PCD layer) that catalyst is leached is referred to as heat stability PCD (TSP).The example of existing leaching method exists
U.S.4,224,380；U.S.7,712,553；U.S.6,544,308；Carry in U.S.20060060392 and relevant patent or application
For.
Also Ore Leaching must be controlled, to avoid the surface between base material or base material and diamond layer and be used to soak
Contact between the acid for going out.Be enough to leach the acid of polycrystalline diamond can cause the very different base material of resistance that serious degraded occurs.It is right
The damage of base material can damage the physical integrity of PCD element, and be likely to result in crackle when in use, disintegrate or other physics
Failure, the latter is also possible to that other can be caused to destroy.
Element comprising PCD layer needs the leaching for carrying out careful control, this dramatically increases complexity in PCD productions,
Time and expense.In addition, leach generally carrying out to PCD element in batches.The test for guaranteeing suitable leaching is damaging, and
And must carry out in the representative elements in each batch.Due to needing to carry out this destructive testing, further increase
The production cost of PCD element.
People were once attempted by individually being leached to PCD layer, were then connected it with base material, so as to avoid to complete
The problem existed when the element of formation is leached.However, available element is not produced in these trials.Specifically, exist
It is actually used middle to have failed the method that PCD layer is connected with base material so that PCD layer slides or departs from.Especially, using soldering side
Method (is for example described in U.S.4,850,523；Those in U.S.7,487,849 and Patents or application) or using machinery
Locking (locking) method (is for example described in U.S.7,533,740 or U.S.4,629,373 and Patents or application
Those) production element be susceptible to failure.
The additive method that PCD layer is combined with pre-formed base material is described in into U.S.7,845,438, but these methods need
Material to having existed in base material is melted and is caused these materials to penetrate into PCD layer.
In additive method, people by being infiltrated to whole drill bit and at least a portion PCD layer with adhesive material,
So as to the PCD layer for leaching be directly connected to wheelspan (gage) region of drill bit (bit).Although these methods are suitable for PCD
It is connected with wheel space area (need not be removed in the useful life of drill bit in these regions), but is unsuitable for PCD
The cutting zone of drill bit is placed on, in the cutting zone, is needed to be replaced PCD or is rotated, to provide normal drill bit
Service life.
Also using additive method by the combined outside of PCD element (Jing is frequently referred to geometric features (geoset)) and drill bit.It is several
What component leads to common metal such as nickel (Ni) to apply.Geometric features coating can provide various advantages, such as in higher temperature
Protection diamond, and the raising with drill bit substrate bond strength.
Accordingly, it would be desirable to certain element (including rotatable or interchangeable element), the element is with the PCD layer for leaching
Such as TSP bodies, the PCD layer is sufficiently good connected with substrate or base material, so that the element can be under the high temperature conditions
Use, the hot conditionss include those conditions that the cutting element of drilling bit such as bigly is experienced.
The content of the invention
According to an embodiment, the invention provides ultrahard abrasive element, the ultrahard abrasive element is not including substantially
Heat stability polycrystalline diamond (TSP) body (the TSP bodies have hole and contact surface) containing catalyst, the contact with the TSP bodies
The adjacent substrate in face；And agent material is infiltrated, the infiltration agent material is impregnated in substrate and is impregnated on TSP contact levels
Kong Zhong.
According to another embodiment, the invention provides the earth drilling bit, the earth drilling bit includes cutting
This ultrahard abrasive element of body form.
According to another embodiment, the invention provides the component for forming ultrahard abrasive element, the component bag
The mould of bottom is included, there is contact surface and heat stability polycrystalline diamond (TSP) body in the mold bottom, be placed in
Substrate powder adjacent with the contact surface and on TSP bodies in the mould, and it is placed in the mould mesostroma powder
On infiltration agent material.
According to another embodiment, the invention provides forming the component of ultrahard abrasive element, the component includes mould
Tool, heat stability polycrystalline diamond (TSP) body with contact surface and in the mould, be placed in the mould and with
The adjacent substrate powder of the contact surface, and infiltration agent material or the binding agent being placed in the mould, in substrate powder
Material.
Present invention also offers the method for forming super hard abrasive, methods described includes assembling component, the component
Including the mould with bottom, with hole and contact surface and the heat stability polycrystalline diamond within mold bottom
(TSP) body, is placed in substrate powder adjacent with the contact surface in the mould and on TSP bodies, and is placed in described
Infiltration agent material in mould, on the substrate powder.Methods described also includes for the component being heated to certain temperature
Degree, and heat a period of time, it is sufficient so that infiltrate agent material the heat time heating time by the hole infiltration of substrate powder and TSP bodies,
And the component is cooled down to form ultrahard abrasive element.
Present invention also offers another kind of method for forming ultrahard abrasive element, methods described includes assembling component, described
Component includes mould, with hole and contact surface and heat stability polycrystalline diamond (TSP) body in mould, is placed in described
In mould and the substrate powder adjacent with the contact surface, and the infiltration agent material that is placed in the substrate powder or binding agent material
Material.Methods described also includes component being heated to into certain temperature and pressure and being heated a period of time, and foot heat time heating time
So that infiltration agent material or adhesive material infiltrate in substrate powder to form the substrate being connected with TSP bodies.
Description of the drawings
To embodiment of the present invention and its advantage be more completely understood need to refer to description below in combination with accompanying drawing,
Embodiments of the present invention are which depict, identical numeral represents similar part, in figure：
Fig. 1 is the side cross-sectional view for forming the infiltration process component of ultrahard abrasive element, the ultrahard abrasive element
Comprising the TSP bodies combined with substrate by infiltration agent material；
Fig. 2 is the amplification schematic cross-section of ultrahard abrasive element；
Fig. 3 is the side cross-sectional view for forming the pressure sintering component of ultrahard abrasive element, the ultrahard abrasive element bag
Containing the TSP bodies combined with substrate by infiltration agent material；
Fig. 4 is the side view of the TSP bodies used in one embodiment of the present invention；
Fig. 5 A and 5B are the top views and side view of ultrahard abrasive element；
Fig. 6 is the side view of the carbide castings stiffener used in one embodiment of the present invention；
Fig. 7 is the side view of the ultrahard abrasive element for having dovetail to lock；
Fig. 8 is the side view of the ultrahard abrasive element for having horizontal lock；With
Fig. 9 is the side view of dovetail lock and ultrahard abrasive element associated with horizontal lock.
Specific embodiment
The present invention relates to the ultrahard abrasive element by infiltrating the super hard abrasive body that agent material is combined with substrate is included, it is described
Super hard abrasive body is such as heat stability polycrystalline diamond (TSP) body.The present invention also relates to include this ultrahard abrasive element
Instrument, and the method for producing this ultrahard abrasive element.Generally, it is described superhard in the method for production ultrahard abrasive element
The super hard abrasive characteristic of abrading-body (such as TSP bodies) can substantially retain constant or no variation.
Although in example embodiment described herein, ultrahard abrasive element typically has the cylinder of flat surfaces,
It is that it can apply to any shape form of final use, for example, is in some embodiments pyramid type, cylinder deformation
Body or even has an angle.In addition, in some embodiments, the surface of ultrahard abrasive element can be concave surface, convex surface or irregular
Shape.
As shown in figure 1, component 10 can be provided for forming ultrahard abrasive element by method of impregnation.Component 10 can be with
Including mould 20, when the part of the ultrahard abrasive element is in shaping, the mould is used for accommodating these parts.TSP
Body 30 can be placed in mould 20.TSP bodies 30 can be substantially free of the catalyst for forming the TSP bodies.For example, Ke Yicong
At least 85% catalyst is removed in the TSP bodies.Substrate powder 40 can also be placed in mould 20, on the top of TSP bodies 30.
Finally, infiltrate agent material 50 can be placed in mould 20, on the top of substrate powder 40.
In order to form ultrahard abrasive element, formation process, during the formation process, base can be applied to component 10
Matter powder 40 is infiltrated by the infiltration agent material 50 for playing binding agent function, and ultimately forms substrate.Infiltration agent material 50 will be with substrate
Powder 40 contact TSP bodies 30 surface infiltration, and at the surface by TSP bodies 30 hole fill, make TSP bodies 30 with
The substrate connection.Fig. 2 shows the amplification sectional view of the ultrahard abrasive element 60 that can be formed.Ultrahard abrasive element 60 is included
The TSP bodies 30 combined with substrate 70, the substrate 70 is formed by substrate powder 40.In specific embodiment, impregnant material
Material 50 can be scattered in substrate 70 using as binding agent, and also by the contact surface 100 of TSP bodies 30 (contact surface 100 with
Substrate 70 is contacted) in hole be infiltrated up to D depth, with formed comprising infiltration agent material region 80.Remaining TSP body 30 is substantially not
Containing binding agent, the region 90 without impregnant can be formed.Transformation can be designed so that in the substrate and TSP with device to hole
Between form micromechanical and combine, and not exclusively metallurgical binding.
According to another embodiment (not shown), can will infiltrate agent material 50 and substrate powder before forming technology
40 are mutually mixed.In such embodiment, infiltration agent material still infiltrates in substrate powder 40, and by TSP bodies 30
Surface infiltrates, also by within filling hole on said surface, so that the substrate 70 formed by substrate powder 40 connects with TSP bodies 30
Connect.
Another embodiment according to Fig. 3, the ultrahard abrasive element 60 of Fig. 2 shown types can use component
10a and pressure sintering are forming.Component 10a can include mould 20a, described when the shape components of the ultrahard abrasive element
Mould 20a is used for accommodating the part of the ultrahard abrasive element.TSP bodies 30 can be placed in mould 20a.Substrate powder 40a
Can be placed in mould 20a.Generally when using pressure sintering, before hot pressing, infiltration agent material is mutually mixed with substrate powder.
Therefore, substrate powder 40a can also include the adhesive material being mutually mixed with it.Described adhesive material can be impregnant
Material, or it can be the material that can not be infiltrated TSP bodies 30.TSP bodies 30 can not be infiltrated in adhesive material, or it is viscous
Mixture material is not enough to fully connect TSP bodies with substrate 70 after ultrahard abrasive element is formed to the infiltration degree of TSP bodies 30
In the case of connecing, TSP bodies 30 can be main with substrate 70 by being connected by the mechanical force produced using pressure sintering.In other heat
In pressure embodiment, the disk of infiltration agent material 50 can be placed on substrate powder 40, and for for example at low pressures
By the infiltration of substrate powder.
In an alternative embodiment, other infiltration process (such as high temperature insostatic pressing (HIP)) can be used for using infiltration agent material by substrate
Powder infiltrates.
Mould 20 used in component 10 by tolerance forming process is suitable to and can cause the ultrahard abrasive element that will be shaped
Any materials of removal are making.According to particular implementation, mould 20 can include ceramic material.Though the figures show mould
Tool 20 has flat, but (not shown) in some embodiments, and it can make permission infiltration agent material 50 in TSP bodies
The shape of 30 edge flowings, helps form mechanical connection between TSP bodies 30 and substrate 70.Mould 20a can be adapted to resistance to being heated
Any mould of pressure circulation.
TSP bodies 30 can be the arbitrary shape for being suitable for ultrahard abrasive element 60.In some embodiments, it can be with
It is the form of disk as shown in Figure 4.TSP bodies 30 can have the contact surface (not shown) of substantially flat.But as shown in figure 4,
TSP bodies 30 can have certain characteristic part, and the characteristic part mechanically strengthens TSP bodies and substrate 70 in ultrahard abrasive element 60
Connection.Especially, TSP bodies 30 can have uneven contact surface 100 as shown in Figure 4.The uneven contact surface 100
Uneven characteristic part, such as groove 110 can be included.When to applying active force to groove with right angle orientation, groove 110 can
To help prevent TSP bodies 30 to slide from substrate 70.Uneven contact surface 100 can have into the region of angle, such as groove
110 wall 120 into angle.These can improve this into the wall 120 of angle by the way that TSP bodies 30 and substrate 70 are locked mutually
Mechanical connection between two parts.
Can also use can increase other configurations that TSP bodies 30 are mechanically connected with substrate 70.Two examples of this configuration
It is shown in Fig. 5 A and 5B.Other are mechanically connected mechanism can be comprising advance machinery TSP connection mechanisms, and this mechanism is when being used alone
Prove inappropriate, be probably suitable when with by infiltrating the connection of agent material 50 and being combined, and can actually improve
The integrated connection of TSP bodies 30 and substrate 70.The mechanism of example is included in U.S.7,533,740 or U.S.4,629,373 (by drawing
With including herein) in find those.Fig. 7,8 and 9 show can increase other structures that TSP bodies 30 are mechanically connected with substrate 70
Type.Some this configurations for example shown in Fig. 9 can apply compression stress to TSP bodies, particularly in use.
When TSP bodies 30 are passed through hot forming method rather than are mechanically connected with substrate 70 by infiltration agent material, can make
With the specific mechanical configuration of TSP bodies 30.
Strengthen supplement or the replacement that TSP bodies 30 are connected with substrate 70 as mechanicalness, the characteristic part of contact surface 100 can also
Increase the contact area contacted with substrate powder 40 before ultrahard abrasive element 60 is formed, or form ultrahard abrasive element
60 increase afterwards the contact area contacted with substrate 70.Especially, uneven contact surface 100 can increase the contact surface
Product.Bigger contact area can improve the combination of TSP bodies 30 and substrate 70, the raising be in forming technology by make with
The adjacent more holes of substrate powder 40 be impregnated with agent material 50 infiltrate or by other means increase be impregnated with agent material 50
The surface of infiltration is realizing.
In some embodiments, the number or volume in the hole of contact surface 100 can also help improve TSP bodies 30 and substrate
70 connection, the raising is by realizing to infiltrating the offer more surfaces product of agent material 50 for infiltrating and connecting.
TSP bodies 30 can be abundant leaching, heat-staple any PCD.Being appropriate to infiltration agent material 50 is made by substrate
Powder 40 infiltrate and by contact surface 100 infiltrate and infiltrate or for some hot-pressing techniques at a temperature of, it is remaining in PCD material
The catalyst for failing abundant leaching can cause to make PCD material graphitization become carbon, weakened so as to improper in superhard abrasive
Used in material element, in some instances it may even be possible to cause disintegrate.Can be before TSP bodies be placed in component 10 or 10a and in superhard abrasive
Before material element 60 shapes, the leaching of TSP bodies is carried out.The standard technique for forming PCD layer can be used to form TSP bodies 30.
Especially, by the way that the granule of naturally occurring or synthetic diamond crystal is mixed with catalyst, and high can be applied to the mixture
Gentle high pressure is forming with the PCD of any base material connection or from the detached PCD of any base material.The PCD can be urged comprising containing
The interstitial matrix and diamond body substrate of agent.According to particular implementation, catalyst can include group VIII metal, especially
It is cobalt (Co).
Then PCD can be by being leached catalyst from any technique that interstitial matrix is removed.The leaching work
Skill can also remove base material (if there is any base material).In some embodiments, before leaching, at least the one of base material
Part can remove for example, by grinding.In certain embodiments, PCD can be leached using acid.Extract technology can be with
It is different from traditional extract technology, because any base material or borderline region need not be protected from influence of extraction.For example, can be by
The combination of PCD or PCD/ base materials is simply placed in acid bath and does not use the protectiveness part of any usual employing.Even acid bath
Design can be different from traditional acid bath.In many techniques that the present invention is used, it is possible to use easy acid bucket.
Louis's acid system can also be used to leach the replacement leaching method of reagent.In this approach, can urge including
The PCD of agent is placed in Louis's acid system and leaches in reagent, until the catalyst by requirement is removed.This method can than
Carry out under traditional leaching method lower temperature and pressure.Louis's acid system leaches reagent can include ferric chloride (FeCl3)、
Copper chloride (CuCl2) and optional hydrochloric acid (HCl) or nitric acid (HNO3), its solution and combinations thereof.The example of this solvent extraction method can
In US 13/168, to find in 733, US 13/168,733 is that Ram Ladi etc. were submitted on June 24th, 2011, entitled
" CHEMICAL AGENTS FOR LEACHING POLYCRYSTALLINE DIAMOND ELEMENTS are (for leaching polycrystalline gold
The chemical reagent of hard rock element) ", by quoting overall including herein.
When catalyst is removed from interstitial matrix, the hole for once placing the catalyst is left.The PCD leachings of the present invention
Going out percentage ratio can be characterized as being removed to leave the overall percentage ratio of the catalyst in hole.May be although leaching degree as described above
Internally there is certain gradient in PCD surfaces, but can be to determine the meansigma methodss that PCD is leached.Particular implementation side of the invention
Formula, TSP bodies 30 can include the PCD for being substantially free of catalyst.More particularly, TSP bodies can comprising average at least 85%, extremely
The PCD that few 90%, at least 95% or at least 99% catalyst is leached.
In some embodiments, TSP bodies 30 can have homogeneous diamond grit (grain size), but at other
In embodiment, granularity can be in TSP bodies.For example, in some embodiments, TSP bodies 30 can be near contact surface 100
Comprising larger diamond particles, so as to generate more holes or higher volume of hole, thus there is provided bigger surface area with
Contact with infiltration agent material 50.In some embodiments, these larger diamond particles can in TSP bodies 30 company of being formed
Connect a layer (not shown).In other embodiments, diamond density can be less in articulamentum.It is tired that diamond is difficult to infiltrate
The difficult connection to TSP bodies 30 and substrate 70 proposes challenge, so lower diamond density can be by improving contact surface 100
Infiltration helping connect.
In other embodiments, TSP bodies 30 can include different materials (such as carbide-formers, particularly W2C)
The articulamentum of formation, or comprising with TSP body phases than only contain a small amount of diamond material formed articulamentum.In an embodiment
In, before ultrahard abrasive element is formed, this connection can be placed on TSP bodies.Due to the destruction sexual orientation for leaching, this
Planting articulamentum can be placed in after the leaching on TSP bodies 30.In another embodiment, ultrahard abrasive element can formed
During, form articulamentum by the individual material layers between substrate powder 40 and TSP bodies 30.In any embodiment
In, articulamentum can fully be connected with TSP bodies, to make its holding constant during using ultrahard abrasive element, but can
To provide the connection with substrate 70 for improving.For example, articulamentum more easily can be impregnated with agent material 50 to infiltrate, Huo Zheyu
The connection that infiltration agent material 50 is formed can be more higher than the connection that TSP is formed.
Substrate powder 40 or 40a can be powder, or be suitable to infiltration agent material 50 (it can play the work(of binding agent
Can) infiltration after formed substrate 70 any other materials.In specific embodiment, substrate powder 40 or 40a can be
It is typically formed the material of the base material of traditional PCD element.Substrate powder 40 or 40a can also provide favourable spy for substrate 70
Property, for example rigidly, erosion resisting, toughness and each with the connection of TSP bodies 30.For example, it can be the powder comprising carbide
Or carbide forms powder.Compared with the traditional PCD element base material containing analog material, the content of infiltration agent material 50 of substrate 70
Generally can be higher.As a result, the erosion resisting of substrate 70 may be lower than conventional substrate.Certain mixture of powders can serve as base
Matter powder 40 is improving the erosion resisting of substrate 70.In certain embodiments, mixture of powders can include carbide, tungsten
(W), tungsten carbide (WC or W2C), the diamond of synthesis, natural diamond, chromium (Cr), ferrum (Fe), nickel (Ni) or be appropriate to increase
The other materials of the erosion resisting of substrate 70.Mixture of powders can also include copper (Cu), manganese (Mn), phosphorus (P), oxygen (O), zinc
(Zn), stannum (Sn), cadmium (Cd), lead (Pb), bismuth (Bi) or tellurium (Te).Substrate powder can include any group of materials mentioned above
Close or mixture.
In some embodiments, substrate powder 40 or 40a can have substantially uniform granularity.However, in other enforcements
In mode, characteristic according to required for substrate 70 or in order to promote substrate 70 and TSP bodies 30 by infiltration or mechanical means
The granularity of connection, substrate powder 40 or 40a can be changed.For example, the infiltration process as using component 10, will can have
The substrate powder 40 for having smaller particle size is placed on the position adjacent with TSP bodies 30.Less granularity causes more impregnants
Material 50 reaches contact surface 100, so that infiltration agent material 50 forms higher connection.Generally substrate powder 40 or 40a
Granule can be micro-meter scale or nanoscale.For example mean diameter can be more than or equal to 5 μm, such as 5-6 μm.Mean diameter can
With more much higher, such as 100 μm.These granularities can represent the base in the half that the total length of substrate 70 is extended to from TSP bodies 30
The mean diameter found in the part of bottom 70.In a word, the granularity of substrate powder 40 or 40a can be noticeably greater than in preformed base material
Admissible granularity.
Although suitable material is typically powder type, in some embodiments, substrate powder 40 or 40a can be with
Replaced with non-dusty material, as long as the material be enough to be impregnated with agent material 50 and infiltrate, form substrate 70, and with TSP bodies 30
Contact surface 100 it is basically identical.
Infiltration agent material 50 can include infiltrating in substrate powder 40 or 40a to form any material of substrate 70.
For example those are used in the pressure sintering of component 10a, and infiltration agent material 50 can mix with substrate powder 40a before hot pressing.
It is during those are for example using the infiltration process of component 10 and possible but be not required, also in some hot-press methods, infiltration
Agent material 50 can also infiltrate contact surface 100, and be impregnated at least enough numbers, contact surface 100 positioned at TSP bodies 30
On hole, so as to form the combination of TSP bodies 30 and substrate 70 by infiltrating agent material 50.In specific embodiment, leaching
Penetration enhancer material 50 can be the material for having affinity to diamond, so as to it is easy to infiltrate contact surface 100, or be easy to pass through
Capillarity or similar sucking action are sinked in hole.In embodiment particularly, infiltration agent material 50 can be comprising conjunction
The material of the catalyst being suitable in PCD shapings, such as group VIII metal such as manganese (Mn) or chromium (Cr).Infiltration agent material 50
It can be the alloy of carbide or the material used in formation carbide, such as titanium (Ti) and copper (Cu) or silver-colored (Ag).At some
In embodiment, infiltration agent material 50 can be different from being used as catalyst in PCD forming processes, then be leached to be formed
The material of TSP bodies.This makes it easy to detect that catalyst is separated with binding agent.However, in other embodiments, impregnant material
Material can be with identical with catalyst.
In certain embodiments, it can be alloy to infiltrate agent material 50, such as nickel (Ni) alloy or other metal alloys
Such as group VIII metal alloy.Even when this alloy is not suitable for being used as catalyst material in PCD forming processes, melting
The advantage of temperature can make alloy be suitable as infiltrating agent material.
After ultrahard abrasive element 60 is formed, infiltration agent material 50 can find that it is in substrate 70 in substrate 70
The function of binding agent can be played.Infiltration agent material 50 can also be in the hole being filled through near contact surface 100 in TSP bodies 30
It was found that.In some embodiments, infiltrating agent material 50 can be essentially defined in contact surface 100 and open to the contact surface
Kong Zhong.However, in other embodiments, in infiltrating the hole that agent material 50 can also be entered near contact surface 100.Comprising infiltration
The part of TSP bodies 30 of agent material 50 can be formed comprising infiltration agent material region 80, and remaining TSP body 30 be substantially free of it is viscous
Mixture, can form the region 90 without impregnant.According to particular implementation, infiltration agent material 50 permeates from contact surface 100
Enter in TSP bodies 30 until the depth of D, depth D can be sufficient so that any average depth that TSP bodies 30 are combined with substrate 70
Degree.In certain embodiments, it can be not more than 100 μm.In other particular implementations, it can be not more than granularity
4 times, no more than the 2 of granularity times, be not more than 1 times of granularity, the half for being not more than granularity, a quarter that is not more than granularity, its
Middle granularity is for the diamond particles on contact surface 100 or near it.In other embodiments, infiltrating agent material 50 can
Only to permeate to the space of exposed hole on contact surface 100.
Infiltration agent material 50 can give TSP bodies 30 characteristic similar to the characteristic of catalyst imparting PCD.Specifically,
Infiltration agent material 50 is likely to reduced the wearability and heat stability of found TSP body regions.In example embodiment, in order to
Reduce negative effect of the infiltration agent material 50 to wearability and heat stability as far as possible, by the region 80 comprising infiltration agent material
Depth D is reduced or is reduced to as far as possible and be enough to TSP bodies 30 with the amount that substrate 70 is combined be advantageous.
Do not limited by the infiltration binding mechanism of agent material 50, according to some embodiments, infiltrated agent material 50 by TSP bodies 30
The mode combined with substrate 70 can be included between TSP bodies 30 and substrate 70 the continuous substrate of physics for forming infiltration agent material.
Substrate powder 40 or 40a can form substrate 70 by using any appropriate forming technology.In particular implementation
In mode, forming technology can provide the shaping of single step substrate and connect, without being similar to some prior art processes, will be into
Shape and Connection Step separate.
In one embodiment, forming technology can be single step Infiltration Technics.Generally, in this technique (any
Depend on by infiltrating agent material 50 that TSP bodies 30 to be infiltrated in the heat pressing process so that it to be connected with substrate 70 be also such) in,
Any materials on contact surface 100 in addition to diamond may be interfered to the infiltration and connection that infiltrate agent material 50,
So in some embodiments, before being incorporated in component 10, the contact surface 100 of TSP bodies 30 can be cleaned.Group
Part 10 can be assembled as described above, be subsequently placed in stove and be heated to certain temperature, heating a period of time, and during the heating
Between be sufficient so as to infiltrate agent material 50 and infiltrate in substrate powder 40 and TSP bodies 30, and substrate powder 40 is cast as into substrate 70.It is special
Not, the stove can be heated to infiltrate the infiltration temperature or higher temperature of agent material 50.Soak can infiltration agent material 50
The minimum temperature for oozing is properly termed as infiltration temperature.The time spent in infiltration temperature or higher temperature can make substrate powder
40 infiltrations are with the shortest time needed for forming substrate 70 and being connected substrate 70 with TSP bodies 30.In some embodiments, exist
The time that infiltration temperature or higher temperature are spent can be 60 seconds or be shorter than 60 seconds.In order to prevent impregnant in forming technology
The oxidation reaction or pollution of material 50 or substrate powder 40, the technique is in vacuum or oxygen-free atmosphere (such as reducing atmosphere or lazy
Property atmosphere) in carry out.
According to particular implementation, due to captivation such as capillarity, infiltration agent material 50 can pass through substrate powder
40.When the contact surface 100 of TSP bodies 30 is reached, infiltration agent material 50 can be by surface infiltration and in connection.Specific real
In applying mode, infiltration agent material 50 is entered in open bore, and is filled with forming the hole of filling.Infiltration agent material 50 can lead to
Cross captivation such as capillarity to sink in hole.For the infiltration agent material 50 for selecting is in the case of diamond has affinity
It is especially true.
After heating, component 10 can be removed from stove, and be cooled to the temperature lower than infiltration temperature.In some embodiment party
In formula, cooling can be carefully controlled any infringement that substrate 70 is connected with TSP bodies 30 will all be reduced or minimized.Example
Such as, can be controlled such that any residual stress is reduced or minimized.Finally, ultrahard abrasive element 60 can be from mould 20
Middle removal.
According to another embodiment, component 10a can be used to form ultrahard abrasive element 60 by single step pressure sintering.
As described above, in some embodiments, the power produced by pressure sintering can provide the sufficient machinery of TSP bodies 30 and substrate 70
Connection, be not required by the connection of impregnating material or impact is very little.In this embodiment, TSP bodies 30 can be with shape
Into specific shape, to promote this mechanical connection.For example, it can have shape as shown in Figure 4 and Figure 5.In other enforcements
In mode, or even when using pressure sintering, TSP bodies 30 can partly depend on or rely on substantially infiltration with the connection of substrate 70
Infiltration of the agent material 50 to TSP bodies 30.In this embodiment, the material of any non-diamond on contact surface 100 can be right
The infiltration and connection of infiltration agent material 50 is interfered, so as to before being incorporated in component 10a, can connecing to TSP bodies 30
Contacting surface 100 is cleaned.
After the cleaning (if being cleaned), TSP bodies 30 can be put in hot pressing die 20a, then use substrate
Powder 40a encapsulates (pack), and the substrate powder can be comprising host material and impregnating material or binding agent.Then can close
Mould, and hot pressing is carried out in certain temperature and pressure, the temperature and pressure be enough to melt infiltration agent material or binding agent simultaneously
And form it into base material 70.In the infiltration agent material embodiment that infiltrates TSP bodies 30, temperature and pressure also be enough to make this
Infiltration occurs.In some embodiments, hot pressing can include changing over time the circulation of temperature and pressure.
According to some embodiments, hot pressing can carry out preventing or reducing right in inert atmosphere or reducing atmosphere
The destruction of TSP bodies 30.Or, can carefully control temperature to prevent TSP bodies 30 to be oxidized.
Hot pressing can be used for forming single ultrahard abrasive element 60, or can process multiple component 10a in same time
To form multiple ultrahard abrasive elements 60 simultaneously.In any case, each ultrahard abrasive element can be after hot pressing be completed
Remove from mould 20a.
In any Infiltration Technics, temperature and pressure used can exceed the scope of traditional diamond-stable.PCD degrades
Temperature and pressure into graphite is known in the art, and is described in document.For example, the scope of diamond-stable can be by ginseng
Examine following document to determine：Bundy etc., " Diamond-Graphite Equilibrium Line from Growth and
Graphitization of Diamond (growth of diamond and graphited diamond-graphite profile of equilibrium) " J.of
Chemical Physics,35(2):383-391 (1961), Kennedy and Kennedy, " the Equilibrium
Boundary Between Graphite and Diamond (equilibrium boundary between graphite and diamond) " J.of
Geophysical Res.,81(14):2467-2470 (1976) and Bundy etc., " The Pressure-Temperature
Phase and Transformation Diagram for Carbon；Updated through1994 (pressure-the temperature to carbon
Degree is mutually schemed with conversion；Update from 1994) " Carbon 34 (2):141-153 (1996), each via reference the material of this paper is included
Material part.The high stable characteristic of TSP can be made in its time needed for ultrahard abrasive element 60 is formed, and tolerance exceeds diamond
The temperature and pressure of stability range.For example, under the pressure used in Infiltration Technics, temperature can be up to 1100 DEG C or 1200
℃。
Generally, if carefully controlled pressure, it is possible to use there is the impregnant of higher melting temperature, so as to reduce in down-hole bar
The probability of impregnant melting under part or other harsh conditions.
Although the temperature and pressure beyond diamond stable range may be used, in many embodiments, such as one
In a little pressure sinterings, temperature and pressure can be in diamond stable range.For example, some hot-pressing techniques can using 850 DEG C～
900 DEG C of temperature, particularly 870 DEG C.
In addition to causing the reduction such as above-mentioned erosion resisting, with the catalyst of analog quantity in traditional PCD element base material or
Binding agent is compared, and be there are other infiltration agent materials 50 in substrate 70 and is caused the hardness of substrate 70 less than conventional substrate.This may
Can cause during the use of ultrahard abrasive element 60, the bending stress on TSP bodies 30 increases.In order to increase the hard of substrate 70
Degree, substrate 70 can include the carbide inserts 140 shown in Fig. 6.Carbide inserts 140 by not having binding agent or can be bordering on not
The carbide for having binding agent is made, and can be impregnated with toleration to infiltration agent material 50.Carbide inserts 140 can be put
In substrate powder 40 in component 10.After ultrahard abrasive element 60 shapes, carbide inserts 140 present in substrate 70
Configuration of configuration when being placed in substrate powder 40 with carbide inserts 140 can be with essentially identical.Except increasing the hard of substrate 70
Beyond degree, carbide inserts 140 can after milling be exposed to the non-TSP bodies end of ultrahard abrasive element 60, and and then
Can serve as the guide of rotation or the replacement of junction point in soldering processes or ultrahard abrasive element.In another embodiment party
In formula, plug-in unit can be made up of other suitable materials (such as ceramics) in addition to carbide.
The ultrahard abrasive element of the present invention can be any element versions benefited from TSP surfaces.In particular implementation
In, it can be the part of the cutting body of the earth drilling bit or industry tools.Embodiments of the present invention are also included containing this
The instrument of invention ultrahard abrasive element.Specific embodiment includes industry tools and the earth drilling bit, such as fixed cutting
The drill bit of body.Nozzle of other particular implementations comprising anti-wear component, bearing or high-pressure fluid.
Ability due to leaching TSP bodies 30, when being combined with base material, generally can leach to more than one PCD layer,
So the super hard abrasive body of the present invention can be used in the case of the multiple element of the PCD layer for having tradition leaching is non-serviceable.
For example, ultrahard abrasive element can be used at the temperature higher than the similar components of the PCD layer for having tradition leaching.
When ultrahard abrasive element of the present invention is used as the cutting body of the earth drilling bit, it is substituted for any conventional leaching
The PCD cutting bodies for going out.In many embodiments, it can be connected by substrate 70 with drill bit.For example, substrate 70 can pass through
Soldering is connected with the cavity in drill bit.
When using in the cut portion of drill bit, the abrasion of the working surface of the cutting body can be than other portions of TSP body 30
The abrasion for dividing is faster.When using circular cutting body as shown in Figure 2, the cutting body can rotate with will abrasion TSP from
Working surface is removed, and untapped TSP is moved to into working surface.In cutting body because the degree of wear is too high so that not
Before energy use, circular cutting body of the invention can at least rotate by this way twice, and Jing often rotates three times.Connection
Can be any means that adopt or additive method in the case of the PCD cutting bodies leached using tradition with the method for rotation.Phase
As, non-circular cutting body can be indexable (indexable) cutting body so as to the mobile worksheet to replace abrasion
Face, rather than replace whole cutting body.
In embodiment using shape plug-in unit as shown in Figure 6 or other suitable shape plug-in units, the plug-in unit can serve as
The guide that working surface is alignd, so as to during using ultrahard abrasive element, working surface is also suffered from from described
The extra support of plug-in unit.For example, when using plug-in unit as shown in Figure 6, can be by component alignment, so as to its working surface base
Originally along a plug-in unit arm, and not between the two arms.
In addition to it can rotate, traditional PCD cutting bodies can also be removed from drill bit.This makes it possible to will be abrasion or damage
Cutting body is replaced, or can be directed to the drilled preferred difference cutting bodies of rock stratum replacement.Due to cutting body can be replaced, significantly
The whole service life of the earth drilling bit is extended, and can be used in different rock stratum.Using according to the present invention
The cutting body that formed of ultrahard abrasive element can also be moved by any means that use of PCD cutting bodies for tradition leaching
Go out and replace.
In some other embodiments, the ultrahard abrasive element of the present invention can be used for guiding fluid stream or for the earth
Corrosion control in drilling bit.For example, can be used to replace the abrasive construction described in documents below：U.S.7,730,976；
U.S.6,510,906；Or U.S.6,843,333, include material part each via reference.
Although the illustrative embodiments of the present invention are only described in detail above, it should be appreciated that without departing from this
These examples can be improved and changed in the case of bright spirit and expected protection domain.For example, although discussing in detail
Ultrahard abrasive element, but other elements comprising similar component (such as the cubic boron nitride of leaching) and form this unit
The similarity method of part also can be employing.
Claims (24)
1. a kind of ultrahard abrasive element, the element includes：
The heat stability polycrystalline diamond TSP bodies of catalyst are substantially free of, the TSP bodies have hole, contact surface and with average
The diamond particles of granularity；
Substrate, the substrate is adjacent with the contact surface of the TSP bodies；With
Infiltration agent material, the infiltration agent material is impregnated in the substrate and is infiltrated up in the hole at the TSP contact levels,
Wherein, the depth that the infiltration agent material is infiltrated up in the hole of the TSP bodies is equal to or less than the gold from the contact surface meter
Four times of hard rock average particle size.
2. ultrahard abrasive element as claimed in claim 1, it is characterised in that described to be substantially free of in the TSP bodies of catalyst extremely
Few 85% catalyst removes to form hole from the polycrystalline diamond.
3. ultrahard abrasive element as claimed in claim 1, it is characterised in that the TSP bodies for being substantially free of catalyst include
The TSP bodies of Jing Ore Leachings.
4. ultrahard abrasive element as claimed in claim 3, it is characterised in that the TSP bodies of the Jing Ore Leachings include Jing FeCl3-
The TSP bodies of Ore Leaching.
5. ultrahard abrasive element as claimed in claim 1, it is characterised in that the contact surface is uneven face.
6. ultrahard abrasive element as claimed in claim 1, it is characterised in that the substrate includes the material being selected from the group：Carbon
Compound, tungsten, the diamond of synthesis, natural diamond or nickel, chromium, ferrum, copper, manganese, phosphorus, oxygen, zinc, stannum, cadmium, lead, bismuth, tellurium and its
Combination in any.
7. ultrahard abrasive element as claimed in claim 6, it is characterised in that the carbide is tungsten carbide.
8. ultrahard abrasive element as claimed in claim 1, it is characterised in that the ultrahard abrasive element is also described comprising being placed in
Carbide inserts in substrate.
9. ultrahard abrasive element as claimed in claim 1, it is characterised in that the infiltration agent material includes group VIII metal
Alloy.
10. ultrahard abrasive element as claimed in claim 1, it is characterised in that the infiltration agent material is infiltrated up to the TSP bodies
Hole in the depth that reached the twice of the diamond particles particle mean size is equal to or less than from the contact surface meter.
11. ultrahard abrasive elements as claimed in claim 1, it is characterised in that the ultrahard abrasive element is for big ground auger
The form of the cutting body of well drill bit.
A kind of 12. the earth drilling bits including cutting body, the cutting body is included as any one of claim 1-11
Ultrahard abrasive element.
13. big ground as claimed in claim 12 drilling bits, it is characterised in that the drill bit is the drill bit for fixing cutting body.
14. big ground as claimed in claim 12 drilling bits, it is characterised in that the cutting body includes rotatable and alternative
Cutting body.
A kind of 15. methods for forming ultrahard abrasive element, methods described includes：
By assembling components, the component includes：
Mould with bottom；
Heat stability polycrystalline diamond TSP bodies, the TSP bodies have hole and contact surface, and within the bottom of the mould；
Substrate powder, the substrate powder be placed in it is adjacent with the contact surface, and on the TSP bodies within the mould
Position；With
Infiltration agent material, on the substrate powder that the infiltration agent material is placed in the mould or among；
The component is heated to into a temperature under a pressure condition and is heated a period of time, be enough to make the heat time heating time
Agent material must be infiltrated to infiltrate the hole of the substrate powder and TSP bodies up to a depth, the depth is from the contact table
Face meter is equal to or less than four times of the average diamond grain size；With
The component is cooled down to form ultrahard abrasive element.
16. methods as claimed in claim 15, it is characterised in that before methods described is additionally included in the assembling components,
Form the TSP bodies.
17. methods as claimed in claim 15, it is characterised in that the step of forming the TSP bodies is included to polycrystalline diamond
Compacting body is leached, and to remove catalyst from interstitial matrix and form hole, the polycrystalline diamond compacting body includes diamond
Substrate and the interstitial matrix containing catalyst.
18. methods as claimed in claim 17, it is characterised in that the leaching is included with containing FeCl3Acid system leach reagent
Leached.
19. methods as claimed in claim 17, it is characterised in that methods described also includes from polycrystalline diamond removing at least
85% catalyst.
20. methods as claimed in claim 15, it is characterised in that methods described also includes at least will be described with infiltration agent material
Exposed hole infiltration on contact surface.
21. methods as claimed in claim 15, it is characterised in that described also to include inserting carbide the step of assembling components
Part is placed in substrate powder.
22. methods as claimed in claim 15, it is characterised in that before methods described is additionally included in the assembling components,
The contact surface of the TSP bodies is cleaned.
23. methods as claimed in claim 15, it is characterised in that methods described is also included from component described in bottom coohng.
24. methods as claimed in claim 15, it is characterised in that the infiltration agent material infiltrates in the hole of the TSP bodies
The depth for reaching is equal to or less than the twice of the diamond particles particle mean size from the contact surface meter.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161495670P | 2011-06-10 | 2011-06-10 | |
| US61/495,670 | 2011-06-10 | ||
| US13/225,134 US8261858B1 (en) | 2011-09-02 | 2011-09-02 | Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof |
| US13/225,134 | 2011-09-02 | ||
| US13/457,009 US8875814B2 (en) | 2011-09-02 | 2012-04-26 | Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof |
| US13/457,009 | 2012-04-26 | ||
| US13/457,088 | 2012-04-26 | ||
| US13/457,088 US8764862B2 (en) | 2011-09-02 | 2012-04-26 | Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof |
| PCT/US2012/041778 WO2012170970A2 (en) | 2011-06-10 | 2012-06-09 | Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104185689A CN104185689A (en) | 2014-12-03 |
| CN104185689B true CN104185689B (en) | 2017-04-26 |
Family
ID=49759652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280038918.4A Expired - Fee Related CN104185689B (en) | 2011-06-10 | 2012-06-09 | Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2718474A2 (en) |
| KR (1) | KR101954354B1 (en) |
| CN (1) | CN104185689B (en) |
| AU (1) | AU2012267485B2 (en) |
| CA (1) | CA2838822C (en) |
| WO (1) | WO2012170970A2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130299249A1 (en) * | 2012-05-08 | 2013-11-14 | Gary E. Weaver | Super-abrasive material with enhanced attachment region and methods for formation and use thereof |
| AR096578A1 (en) * | 2013-06-11 | 2016-01-20 | Ulterra Drilling Tech Lp | PCD ELEMENTS AND PROCESS TO ELABORATE THEM |
| US10871037B2 (en) | 2015-12-14 | 2020-12-22 | Smith International, Inc. | Mechanical locking of ovoid cutting element with carbide matrix |
| GB201523182D0 (en) * | 2015-12-31 | 2016-02-17 | Element Six Uk Ltd | Super hard constructions & methods of making same |
| US10213835B2 (en) * | 2016-02-10 | 2019-02-26 | Diamond Innovations, Inc. | Polycrystalline diamond compacts having parting compound and methods of making the same |
| CN108884707B (en) * | 2016-03-16 | 2021-08-24 | 戴蒙得创新股份有限公司 | Polycrystalline diamond body comprising annular regions having different properties |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4224380A (en) | 1978-03-28 | 1980-09-23 | General Electric Company | Temperature resistant abrasive compact and method for making same |
| US4629373A (en) | 1983-06-22 | 1986-12-16 | Megadiamond Industries, Inc. | Polycrystalline diamond body with enhanced surface irregularities |
| US4850523A (en) | 1988-02-22 | 1989-07-25 | General Electric Company | Bonding of thermally stable abrasive compacts to carbide supports |
| AU1615499A (en) * | 1997-12-02 | 1999-06-16 | Robert Paul Radtke | Continuous self-sharpening cutting assembly for use with drilling systems |
| US6843333B2 (en) | 1999-11-29 | 2005-01-18 | Baker Hughes Incorporated | Impregnated rotary drag bit |
| US6510906B1 (en) | 1999-11-29 | 2003-01-28 | Baker Hughes Incorporated | Impregnated bit with PDC cutters in cone area |
| US6592985B2 (en) | 2000-09-20 | 2003-07-15 | Camco International (Uk) Limited | Polycrystalline diamond partially depleted of catalyzing material |
| US7754333B2 (en) | 2004-09-21 | 2010-07-13 | Smith International, Inc. | Thermally stable diamond polycrystalline diamond constructions |
| GB2429471B (en) | 2005-02-08 | 2009-07-01 | Smith International | Thermally stable polycrystalline diamond cutting elements and bits incorporating the same |
| US7487849B2 (en) | 2005-05-16 | 2009-02-10 | Radtke Robert P | Thermally stable diamond brazing |
| US7942219B2 (en) * | 2007-03-21 | 2011-05-17 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
| US7730976B2 (en) | 2007-10-31 | 2010-06-08 | Baker Hughes Incorporated | Impregnated rotary drag bit and related methods |
| US7845438B1 (en) * | 2008-05-15 | 2010-12-07 | Us Synthetic Corporation | Polycrystalline diamond compacts, methods of fabricating same, and applications using same |
| US7712553B2 (en) | 2008-07-18 | 2010-05-11 | Omni Ip Ltd | Method and apparatus for selectively leaching portions of PDC cutters used in drill bits |
| US8083012B2 (en) * | 2008-10-03 | 2011-12-27 | Smith International, Inc. | Diamond bonded construction with thermally stable region |
| WO2010129811A2 (en) * | 2009-05-06 | 2010-11-11 | Smith International, Inc. | Cutting elements with re-processed thermally stable polycrystalline diamond cutting layers, bits incorporating the same, and methods of making the same |
| US20110024201A1 (en) * | 2009-07-31 | 2011-02-03 | Danny Eugene Scott | Polycrystalline diamond composite compact elements and tools incorporating same |
| US8758463B2 (en) * | 2009-08-07 | 2014-06-24 | Smith International, Inc. | Method of forming a thermally stable diamond cutting element |
| US20120225277A1 (en) * | 2011-03-04 | 2012-09-06 | Baker Hughes Incorporated | Methods of forming polycrystalline tables and polycrystalline elements and related structures |
-
2012
- 2012-06-09 CA CA2838822A patent/CA2838822C/en not_active Expired - Fee Related
- 2012-06-09 KR KR1020147000776A patent/KR101954354B1/en active IP Right Grant
- 2012-06-09 WO PCT/US2012/041778 patent/WO2012170970A2/en active Application Filing
- 2012-06-09 AU AU2012267485A patent/AU2012267485B2/en not_active Expired - Fee Related
- 2012-06-09 EP EP12728908.0A patent/EP2718474A2/en not_active Withdrawn
- 2012-06-09 CN CN201280038918.4A patent/CN104185689B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2838822A1 (en) | 2012-12-13 |
| CA2838822C (en) | 2016-11-22 |
| EP2718474A2 (en) | 2014-04-16 |
| WO2012170970A2 (en) | 2012-12-13 |
| KR20140074879A (en) | 2014-06-18 |
| CN104185689A (en) | 2014-12-03 |
| AU2012267485A1 (en) | 2013-12-19 |
| WO2012170970A3 (en) | 2013-02-07 |
| AU2012267485B2 (en) | 2015-11-19 |
| KR101954354B1 (en) | 2019-03-05 |
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