CN104167502A - Organic light-emitting diode and preparation method thereof - Google Patents
Organic light-emitting diode and preparation method thereof Download PDFInfo
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- CN104167502A CN104167502A CN201310186431.7A CN201310186431A CN104167502A CN 104167502 A CN104167502 A CN 104167502A CN 201310186431 A CN201310186431 A CN 201310186431A CN 104167502 A CN104167502 A CN 104167502A
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/844—Encapsulations
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Abstract
The invention is to provide an organic light-emitting diode with a packaging layer structure. The packaging layer is a composite structure formed by stacking packaging layer units. Each packaging layer unit comprises a first organic barrier layer, a first inorganic barrier layer, a second organic barrier layer and a second inorganic barrier layer which are stacked in sequence, so that erosion of external active materials, such as water and oxygen and the like, on the organic light-emitting diode can be reduced effectively, and the service life of the organic light-emitting diode can be prolonged. The invention also provides a preparation method of the organic light-emitting diode. The preparation method is simple in process, low in raw material and easy for mass preparation.
Description
Technical field
The present invention relates to organic electroluminescent field, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind ofly to take organic material as luminescent material, the energy conversion device that can be luminous energy the electric energy conversion applying.It has the outstanding properties such as ultra-thin, self-luminous, response are fast, low-power consumption, in fields such as demonstration, illuminations, has application prospect very widely.
The structure of organic electroluminescence device is sandwich structure, between negative electrode and anode, accompanies organic luminous layer.Organic substance in the luminescent layer of OLED is very responsive to the pollutant in atmosphere, oxygen and moisture, if Long Term Contact can reduce the luminescent properties of organic electroluminescence device and shorten its useful life, and the cathode material of OLED mostly is the more active metal of chemical property, very easily in air or in other atmosphere containing aerobic, steam, suffer erosion.Therefore, usually need OLED to carry out packaging protection processing, make the isolation of luminescent device and external environment, preventing that water from dividing, the intrusion of pernicious gas etc., and then stability and the useful life of improving OLED.
For flexible OLED product, if use traditional OLED encapsulation technology, in device back, add encapsulation cover plate, can produce the problems such as weight is large, cost is high, bad mechanical strength, limited the performance performance of flexible OLED product.At present, the waterproof oxygen of most flexible OLED is indifferent, and useful life is shorter, and complicated process of preparation, cost are high.
Summary of the invention
In order to address the above problem, the present invention aims to provide a kind of organic electroluminescence device with encapsulation layer structure, this encapsulation layer structure can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, can extend the useful life of organic electroluminescence device.The present invention also provides a kind of preparation method of organic electroluminescence device, and this preparation method's technique is simple, and raw material is cheap, is easy to large area preparation.
First aspect, the invention provides a kind of organic electroluminescence device, comprise the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, the composite construction of described encapsulated layer for being formed by encapsulated layer cells overlap, described encapsulated layer unit is first organic barrier layer, the first inorganic barrier layer, second organic barrier layer and the second inorganic barrier layer stacking gradually;
The material of described the first inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony telluride, bismuth telluride, cadmium telluride, tellurium indium, tellurium tin and lead telluride; The material of described the second inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony selenide, selenizing molybdenum, bismuth selenide, selenizing niobium, selenizing tantalum and Berzeline;
The material on described first organic barrier layer and second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine or 9,9'-(1,3-phenyl), two-9H-carbazole; Described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
Light emitting functional layer is arranged on anode conducting substrate.
Preferably, light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer stacking gradually.
Preferably, the material of hole injection layer is MoO
3the mixture being mixed to form according to mass ratio 3:7 with NPB.
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy)
3) with 1,3, the mixture that 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) is mixed to form according to mass ratio 5:95.
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen)
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN
3) mixture that is mixed to form according to mass ratio 3:7 with Bphen.
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer.
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
At negative electrode arranged outside encapsulated layer, encapsulated layer is the composite construction that encapsulated layer cells overlap forms.Encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer and the second inorganic barrier layer stacking gradually.
Preferably, the encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
Alternately laminated by by organic barrier layer and inorganic barrier layer, adjust ratio and the consumption of each material, the superiority and inferiority on inorganic barrier layer and organic barrier layer can be carried out complementary balancedly, have better sealing, the vapor permeability (WVTR) that can control luminescent device 10 simultaneously
-4g/ (m
2day) order of magnitude.
Organic film material manufacture craft is simple, and film surface is smooth, for inorganic film provides good substrate, has cushioned the internal stress of inorganic film due to the low stress of organic film simultaneously, avoids inorganic film that the defects such as be full of cracks occur.Therefore use organic barrier layer can improve surperficial evenness, the defect of simultaneously avoiding inorganic barrier layer to produce.
The material on first organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance.
Guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine (TPD), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene (MADN), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or 9,9'-(1,3-phenyl) two-9H-carbazole (mCP).
Material of main part is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq
3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
In first organic barrier layer, guest materials and material of main part amount of substance are than being 2:3～3:2.
Preferably, the thickness on first organic barrier layer is 200～300nm.
The material of the first inorganic barrier layer is antimony telluride (Sb
2te
3), bismuth telluride (Bi
2te
3), cadmium telluride (CdTe), tellurium indium (In
2te
3), a kind of and magnesium oxide (MgO), aluminium oxide (Al in tellurium tin (SnTe) and lead telluride (PbTe)
2o
3), titanium dioxide (TiO
2), zirconium dioxide (ZrO
2), hafnium oxide (HfO
2) and tantalum pentoxide (Ta
2o
5) in a kind of mixture being mixed to form according to mass ratio 1:9～3:7.Wherein, MgO, Al
2o
3, TiO
2, ZrO
2, HfO
2or Ta
2o
5for material of main part, Sb
2te
3, Bi
2te
3, CdTe, In
2te
3, SnTe or PbTe be guest materials.
In the first inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9～3:7.
Preferably, the thickness of the first inorganic barrier layer is 100～200nm.
The material on second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance.
Guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine (TPD), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene (MADN), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or 9,9'-(1,3-phenyl) two-9H-carbazole (mCP).
Material of main part is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq
3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
In second organic barrier layer, guest materials and material of main part amount of substance are than being 2:3～3:2.
Preferably, the thickness on second organic barrier layer is 200～300nm.
The material of the second inorganic barrier layer is antimony selenide (Sb
2se
3), selenizing molybdenum (MoSe
2), bismuth selenide (Bi
2se
3), selenizing niobium (NbSe
2), selenizing tantalum (TaSe
2) and Berzeline (Cu
2se) a kind of and magnesium oxide (MgO) in, aluminium oxide (Al
2o
3), titanium dioxide (TiO
2), zirconium dioxide (ZrO
2), hafnium oxide (HfO
2) and tantalum pentoxide (Ta
2o
5) in a kind of mixture being mixed to form according to mass ratio 1:9～3:7.Wherein, MgO, Al
2o
3, TiO
2, ZrO
2, HfO
2or Ta
2o
5for material of main part, Sb
2se
3, MoSe
2, Bi
2se
3, NbSe
2, TaSe
2or Cu
2se is guest materials.
In the second inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9～3:7.
Preferably, the thickness of the second inorganic barrier layer is 100～200nm.
The first inorganic barrier layer and the second inorganic barrier layer are used metal oxide as material of main part, and mix semi-conducting material tellurides or selenides, most metals oxide has the features such as high-melting-point, high rigidity, stable chemical nature under normal temperature and hot conditions, and be difficult for by inorganic acid and water erosion, there is good corrosion-resistant, fire-resistance property.The present invention mixes metal oxide with tellurides or selenides, improve corrosion-resistant and machining property, obtains all good materials of wear resistence and stability, regulates both ratios to prepare inorganic barrier layer, can obtain good steam isolation effect.
Second aspect, the invention provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
S1, provide clean anode conducting substrate, and described anode conducting substrate is carried out to activation processing;
S2, in the vacuum evaporation of described anode conducting substrate surface, prepare light emitting functional layer and negative electrode;
S3, in described cathode surface vacuum evaporation, prepare first organic barrier layer, the material on described first organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4, 4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamines, 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9, 10-bis-(2-naphthalene) anthracene, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine or 9, 9'-(1, 3-phenyl) two-9H-carbazole, described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole,
S4, at described first organic barrier layer surface magnetron sputtering, prepare the first inorganic barrier layer, the material of described the first inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony telluride, bismuth telluride, cadmium telluride, tellurium indium, tellurium tin and lead telluride;
S5, at described the first inorganic barrier layer surface vacuum evaporation, prepare second organic barrier layer, the material on described second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4, 4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamines, 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9, 10-bis-(2-naphthalene) anthracene, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine or 9, 9'-(1, 3-phenyl) two-9H-carbazole, described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole,
S6, at described second organic barrier layer surface magnetron sputtering, prepare the second inorganic barrier layer, the material of described the second inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony selenide, selenizing molybdenum, bismuth selenide, selenizing niobium, selenizing tantalum and Berzeline; After S3～S6 step completes, make an encapsulated layer unit;
S7: repeating step S3～S6 makes the encapsulated layer with composite construction, finally obtains described organic electroluminescence device.
In step S1, by the cleaning of antianode electrically-conductive backing plate, remove the organic pollution of anode conducting substrate surface.
Particularly, the clean operation of anode conducting substrate is: anode conducting substrate is cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively, then with nitrogen, dry up, stove-drying, obtains clean anode conducting substrate.
Anode conducting substrate after cleaning is carried out to surface activation process, to increase the oxygen content of conductive surface layer, improve the work function of conductive layer surface.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
In step S2, light emitting functional layer is arranged on anode conducting substrate by vacuum evaporation.
During preferably, vacuum evaporation light emitting functional layer, condition is vacuum degree 3 * 10
-5pa, evaporation rate
Preferably, light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer stacking gradually.
Preferably, the material of hole injection layer is MoO
3the mixture being mixed to form according to mass ratio 3:7 with NPB.
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy)
3) with 1,3, the mixture that 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) is mixed to form according to mass ratio 5:95.
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen)
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN
3) mixture that is mixed to form according to mass ratio 3:7 with Bphen.
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer by vacuum evaporation.
Preferably, condition is vacuum degree 3 * 10 during vacuum evaporation negative electrode
-5pa, evaporation rate
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
In step S3, first organic barrier layer is arranged on cathode surface by vacuum evaporation.
Condition when preferably, first organic barrier layer is prepared in vacuum evaporation is vacuum degree 1 * 10
-5～1 * 10
-3pa, speed
The material on first organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance.
Guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine (TPD), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene (MADN), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or 9,9'-(1,3-phenyl) two-9H-carbazole (mCP).
Material of main part is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq
3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
In first organic barrier layer, guest materials and material of main part amount of substance are than being 2:3～3:2.
Preferably, the thickness on first organic barrier layer is 200～300nm.
In step S4, the first inorganic barrier layer is arranged on first organic barrier layer surface by magnetron sputtering.
When preferably, magnetron sputtering is prepared the first inorganic barrier layer, condition is vacuum degree 1 * 10
-5～1 * 10
-3pa, accelerating voltage 300～800V, magnetic field 50～200G, power density 1～40W/cm
2.
The material of the first inorganic barrier layer is antimony telluride (Sb
2te
3), bismuth telluride (Bi
2te
3), cadmium telluride (CdTe), tellurium indium (In
2te
3), a kind of and magnesium oxide (MgO), aluminium oxide (Al in tellurium tin (SnTe) and lead telluride (PbTe)
2o
3), titanium dioxide (TiO
2), zirconium dioxide (ZrO
2), hafnium oxide (HfO
2) and tantalum pentoxide (Ta
2o
5) in a kind of mixture being mixed to form according to mass ratio 1:9～3:7.Wherein, MgO, Al
2o
3, TiO
2, ZrO
2, HfO
2or Ta
2o
5for material of main part, Sb
2te
3, Bi
2te
3, CdTe, In
2te
3, SnTe or PbTe be guest materials.
In the first inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9～3:7.
Preferably, the thickness of the first inorganic barrier layer is 100～200nm.
Alternately laminated by by organic barrier layer and inorganic barrier layer, adjust ratio and the consumption of each material, the superiority and inferiority on inorganic barrier layer and organic barrier layer can be carried out complementary balancedly, have better sealing, the vapor permeability (WVTR) that can control luminescent device 10 simultaneously
-4g/ (m
2day) order of magnitude.
Organic film material manufacture craft is simple, and film surface is smooth, for inorganic film provides good substrate, has cushioned the internal stress of inorganic film due to the low stress of organic film simultaneously, avoids inorganic film that the defects such as be full of cracks occur.Therefore use organic barrier layer can improve surperficial evenness, the defect of simultaneously avoiding inorganic barrier layer to produce.
In step S5, second organic barrier layer is arranged on the first inorganic barrier layer surface by vacuum evaporation.
Preferably, condition is vacuum degree 1 * 10 during vacuum evaporation second organic barrier layer
-5～1 * 10
-3pa, speed
The material on second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance.
Guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine (TPD), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene (MADN), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or 9,9'-(1,3-phenyl) two-9H-carbazole (mCP).
Material of main part is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq
3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
In second organic barrier layer, guest materials and material of main part amount of substance are than being 2:3～3:2.
Preferably, the thickness on second organic barrier layer is 200～300nm.
In step S6, the second inorganic barrier layer is arranged on second organic barrier layer surface by magnetron sputtering.
Preferably, condition is vacuum degree 1 * 10 during magnetron sputtering the second inorganic barrier layer
-5～1 * 10
-3pa, accelerating voltage 300～800V, magnetic field 50～200G, power density 1～40W/cm
2.
The material of the second inorganic barrier layer is antimony selenide (Sb
2se
3), selenizing molybdenum (MoSe
2), bismuth selenide (Bi
2se
3), selenizing niobium (NbSe
2), selenizing tantalum (TaSe
2) and Berzeline (Cu
2se) a kind of and magnesium oxide (MgO) in, aluminium oxide (Al
2o
3), titanium dioxide (TiO
2), zirconium dioxide (ZrO
2), hafnium oxide (HfO
2) and tantalum pentoxide (Ta
2o
5) in a kind of mixture being mixed to form according to mass ratio 1:9～3:7.Wherein, MgO, Al
2o
3, TiO
2, ZrO
2, HfO
2or Ta
2o
5for material of main part, Sb
2se
3, MoSe
2, Bi
2se
3, NbSe
2, TaSe
2or Cu
2se is guest materials.
In the second inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9～3:7.
Preferably, the thickness of the second inorganic barrier layer is 100～200nm.
After completing steps S3～S6, in negative electrode outside, make an encapsulated layer unit, comprised the first organic barrier layer, the first inorganic barrier layer, second organic barrier layer and the second inorganic barrier layer that stack gradually.
In step S7, adopt the condition identical with step S3～S6, on described the second inorganic barrier layer surface, prepare successively first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer, make the encapsulated layer with composite construction, finally obtain described organic electroluminescence device.
Preferably, step S7 is implemented 1～3 time, the encapsulated layer obtaining comprises 2～4 encapsulated layer unit.
The first inorganic barrier layer and the second inorganic barrier layer are used metal oxide as material of main part, and mix semi-conducting material tellurides or selenides, most metals oxide has the features such as high-melting-point, high rigidity, stable chemical nature under normal temperature and hot conditions, and be difficult for by inorganic acid and water erosion, there is good corrosion-resistant, fire-resistance property.The present invention mixes metal oxide with tellurides or selenides, improve corrosion-resistant and machining property, obtains all good materials of wear resistence and stability, regulates both ratios to prepare inorganic barrier layer, can obtain good steam isolation effect.
The present invention has following beneficial effect:
(1) a kind of organic electroluminescence device with encapsulation layer structure provided by the invention, can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, has good sealing and longer useful life.
(2) preparation method of a kind of organic electroluminescence device provided by the invention, this preparation method's technique is simple, and raw material is cheap, is easy to large area preparation.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structure chart of the organic electroluminescence device that provides of the embodiment of the present invention 6.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1:
An organic electroluminescence device, makes by following operating procedure:
(1) provide clean anode conducting substrate:
Ito glass substrate is cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively, and individual event washing is cleaned 5 minutes, then with nitrogen, dries up, and stove-drying is stand-by; Ito glass after cleaning is carried out to surface activation process; ITO thickness is 100nm;
(2) vacuum evaporation light emitting functional layer on ito glass substrate:
Particularly, light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The preparation of hole injection layer: by MoO
3the mixture being mixed to get according to mass ratio 3:7 with NPB is as the material of hole injection layer, thickness 10nm, vacuum degree 3 * 10
-5pa, evaporation rate
The preparation of hole transmission layer: adopt 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) is as hole mobile material, vacuum degree 3 * 10
-5pa, evaporation rate
evaporation thickness 30nm;
The preparation of luminescent layer: adopt Ir (ppy)
3the mixture being mixed to form according to mass ratio 5:95 with TPBi is as the material of luminescent layer, vacuum degree 3 * 10
-5pa, evaporation rate
evaporation thickness 20nm;
The preparation of electron transfer layer: evaporation one deck 4,7-diphenyl-1,10-phenanthroline (Bphen) is as electron transport material, vacuum degree 3 * 10
-5pa, evaporation rate
evaporation thickness 10nm;
The preparation of electron injecting layer: by CsN
3the mixture being mixed to form according to mass ratio 3:7 with Bphen is as the material of electron injecting layer, vacuum degree 3 * 10
-5pa, evaporation rate
evaporation thickness 20nm;
(3) on light emitting functional layer surface, prepare negative electrode:
Metallic cathode adopts aluminium (Al), and thickness is 100nm, vacuum degree 3 * 10
-5pa, evaporation rate
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 4 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: the mixture that TPD and Bphen are mixed to form than 11:9 according to amount of substance is as the material on first organic barrier layer, vacuum degree 1 * 10
-5pa, evaporation rate
thickness 300nm;
The making of the first inorganic barrier layer: by Sb
2te
3the mixture being mixed to form according to mass ratio 3:7 with MgO, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-5pa, accelerating voltage 300V, magnetic field 50G, power density 1W/cm
2, thickness 200nm;
The making on second organic barrier layer: the mixture that TPD and Bphen are mixed to form than 11:9 according to amount of substance is as the material on second organic barrier layer, vacuum degree 1 * 10
-5pa, evaporation rate
thickness 300nm;
The making of the second inorganic barrier layer: by Sb
2se
3the mixture being mixed to form according to mass ratio 3:7 with MgO, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-5pa, accelerating voltage 300V, magnetic field 50G, power density 1W/cm
2, thickness 200nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 4 encapsulated layer unit in this luminescent device negative electrode outside.
Embodiment 2:
An organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 3 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: the mixture that NPB and BCP are mixed to form than 1:1 according to amount of substance is as the material on first organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the first inorganic barrier layer: by Bi
2te
3with Al
2o
3the mixture being mixed to form according to mass ratio 1:9, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-5pa, accelerating voltage 500V, magnetic field 100G, power density 20W/cm
2, thickness 100nm;
The making on second organic barrier layer: the mixture that NPB and BCP are mixed to form than 1:1 according to amount of substance is as the material on second organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the second inorganic barrier layer: by MoSe
2with Al
2o
3the mixture being mixed to form according to mass ratio 1:4, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-5pa, accelerating voltage 500V, magnetic field 100G, power density 20W/cm
2, thickness 150nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 3 encapsulated layer unit in this luminescent device negative electrode outside.
Embodiment 3:
An organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 3 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: the mixture that TAPC and TPBi are mixed to form than 1:1 according to amount of substance is as the material on first organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 200nm;
The making of the first inorganic barrier layer: by CdTe and TiO
2the mixture being mixed to form according to mass ratio 1:4, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-5pa, accelerating voltage 600V, magnetic field 120G, power density 25W/cm
2, thickness 160nm;
The making on second organic barrier layer: the mixture that TAPC and TPBi are mixed to form than 1:1 according to amount of substance is as the material on second organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 200nm;
The making of the second inorganic barrier layer: by Bi
2se
3with TiO
2the mixture being mixed to form according to mass ratio 1:9, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-4pa, accelerating voltage 600V, magnetic field 120G, power density 25W/cm
2, thickness 140nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 3 encapsulated layer unit in this luminescent device negative electrode outside.
Embodiment 4:
An organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 3 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: by MADN and Alq
3the mixture being mixed to form than 3:2 according to amount of substance is as the material on first organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the first inorganic barrier layer: by In
2te
3with ZrO
2the mixture being mixed to form according to mass ratio 1:4, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 5 * 10
-5pa, accelerating voltage 700V, magnetic field 150G, power density 35W/cm
2, thickness 150nm;
The making on second organic barrier layer: by MADN and Alq
3the mixture being mixed to form than 3:2 according to amount of substance is as the material on second organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the second inorganic barrier layer: by NbSe
2with ZrO
2the mixture being mixed to form according to mass ratio 1:9, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-4pa, accelerating voltage 700V, magnetic field 150G, power density 35W/cm
2, thickness 120nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 3 encapsulated layer unit in this luminescent device negative electrode outside.
Embodiment 5:
An organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 3 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: the mixture that TCTA and Balq are mixed to form than 1:1 according to amount of substance is as the material on first organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the first inorganic barrier layer: by SnTe and HfO
2the mixture being mixed to form according to mass ratio 1:4, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 5 * 10
-5pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm
2, thickness 150nm;
The making on second organic barrier layer: the mixture that TCTA and Balq are mixed to form than 1:1 according to amount of substance is as the material on second organic barrier layer, vacuum degree 5 * 10
-5pa, evaporation rate
thickness 250nm;
The making of the second inorganic barrier layer: by TaSe
2with HfO
2the mixture being mixed to form according to mass ratio 3:17, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-4pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm
2, thickness 100nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 3 encapsulated layer unit in this luminescent device negative electrode outside.
Embodiment 6:
An organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) in negative electrode outside, prepare encapsulated layer:
Encapsulated layer comprises 2 overlapping encapsulated layer unit, and encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer, the second inorganic barrier layer stacking gradually;
The making on first organic barrier layer: the mixture that mCP and TAZ are mixed to form than 2:3 according to amount of substance is as the material on first organic barrier layer, vacuum degree 1 * 10
-3pa, evaporation rate
thickness 250nm;
The making of the first inorganic barrier layer: by PbTe and Ta
2o
5the mixture being mixed to form according to mass ratio 1:4, as the material of the first inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-3pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm
2, thickness 150nm;
The making on second organic barrier layer: the mixture that mCP and TAZ are mixed to form than 2:3 according to amount of substance is as the material on second organic barrier layer, vacuum degree 1 * 10
-3pa, evaporation rate
thickness 250nm;
The making of the second inorganic barrier layer: by Cu
2se and Ta
2o
5the mixture being mixed to form according to mass ratio 1:9, as the material of the second inorganic barrier layer, adopts magnetically controlled sputter method to make, base vacuum degree 1 * 10
-3pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm
2, thickness 120nm;
Repeat to prepare encapsulated layer unit, finally make organic electroluminescence device, there are 2 encapsulated layer unit in this luminescent device negative electrode outside.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment 6.As shown in Figure 1, the structure of this organic electroluminescence device comprises that the anode conducting substrate 10, light emitting functional layer 20, negative electrode 30, the first encapsulated layer unit 40(that stack gradually comprise first organic barrier layer 401, the first organic barrier layer 403 of inorganic barrier layer 402, second, the second inorganic barrier layer 404), the second encapsulated layer unit 50(comprises first organic barrier layer 501, the first organic barrier layer 503 of inorganic barrier layer 502, second, the second inorganic barrier layer 504).
Effect embodiment
Adopt the vapor permeability (WVTR) of Ca film electrical testing system testing organic electroluminescence device, and test life-span (the T70@1000cd/m of organic electroluminescence device
2), from original intensity 1000cd/m
2decayed to for 70% required time.WVTR and the life-span of the organic electroluminescence device of the embodiment of the present invention 1～6 preparation are as shown in table 1.As can be seen from the table, WVTR all remains on 10
-4g/ (m
2day) order of magnitude, minimumly reaches 2.2 * 10
-4g/ (m
2day), can meet the real requirement of flexible OLED.The life time of organic electroluminescence device is the longest reaches 7109 hours.This explanation, the organic electroluminescence device with encapsulation layer structure prepared by the present invention can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, has good sealing and longer useful life.
Table 1
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, comprises the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, it is characterized in that the composite construction of described encapsulated layer for being formed by encapsulated layer cells overlap; Described encapsulated layer unit comprises first organic barrier layer, the first inorganic barrier layer, second organic barrier layer and the second inorganic barrier layer stacking gradually;
The material of described the first inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony telluride, bismuth telluride, cadmium telluride, tellurium indium, tellurium tin and lead telluride; The material of described the second inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony selenide, selenizing molybdenum, bismuth selenide, selenizing niobium, selenizing tantalum and Berzeline;
The material on described first organic barrier layer and second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4,4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9,10-bis-(2-naphthalene) anthracene, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine or 9,9'-(1,3-phenyl), two-9H-carbazole; Described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, the described encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness on described first organic barrier layer is 200～300nm, and the thickness of described the first inorganic barrier layer is 100～200nm.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness on described second organic barrier layer is 200～300nm, and the thickness of described the second inorganic barrier layer is 100～200nm.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, described light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer stacking gradually.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
S1, provide clean anode conducting substrate, and described anode conducting substrate is carried out to activation processing;
S2, in the vacuum evaporation of described anode conducting substrate surface, prepare light emitting functional layer and negative electrode;
S3, in described cathode surface vacuum evaporation, prepare first organic barrier layer, the material on described first organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4, 4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamines, 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9, 10-bis-(2-naphthalene) anthracene, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine or 9, 9'-(1, 3-phenyl) two-9H-carbazole, described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole,
S4, at described first organic barrier layer surface magnetron sputtering, prepare the first inorganic barrier layer, the material of described the first inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony telluride, bismuth telluride, cadmium telluride, tellurium indium, tellurium tin and lead telluride;
S5, at described the first inorganic barrier layer surface vacuum evaporation, prepare second organic barrier layer, the material on described second organic barrier layer is the mixture that guest materials and material of main part are mixed to form than 2:3～3:2 according to amount of substance, described guest materials is N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-4, 4'-benzidine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamines, 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, the 3-tert-butyl group-9, 10-bis-(2-naphthalene) anthracene, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine or 9, 9'-(1, 3-phenyl) two-9H-carbazole, described material of main part is 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole,
S6, at described second organic barrier layer surface magnetron sputtering, prepare the second inorganic barrier layer, the material of described the second inorganic barrier layer is a kind of mixture being mixed to form according to mass ratio 1:9～3:7 in a kind of and magnesium oxide, aluminium oxide, titanium dioxide, zirconium dioxide, hafnium oxide and the tantalum pentoxide in antimony selenide, selenizing molybdenum, bismuth selenide, selenizing niobium, selenizing tantalum and Berzeline; After S3～S6 step completes, make an encapsulated layer unit;
S7: repeating step S3～S6 makes the encapsulated layer with composite construction, finally obtains described organic electroluminescence device.
7. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the described encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
8. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness on described first organic barrier layer is 200～300nm, and the thickness of described the first inorganic barrier layer is 100～200nm.
9. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness on described second organic barrier layer is 200～300nm, and the thickness of described the second inorganic barrier layer is 100～200nm.
10. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, described light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer stacking gradually.
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| US10804494B2 (en) | 2017-11-10 | 2020-10-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device, display panel and manufacturing method thereof |
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