CN104141151A - Method for forming metal simple substance through ionic liquid in electrolytic deposition mode - Google Patents
Method for forming metal simple substance through ionic liquid in electrolytic deposition mode Download PDFInfo
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- CN104141151A CN104141151A CN201410382539.8A CN201410382539A CN104141151A CN 104141151 A CN104141151 A CN 104141151A CN 201410382539 A CN201410382539 A CN 201410382539A CN 104141151 A CN104141151 A CN 104141151A
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Abstract
The invention provides a method for forming a metal simple substance through ionic liquid in an electrolytic deposition mode, and belongs to the technical field of materials. The method includes the steps that (1) the ionic liquid and copper or indium or gallium ions in proper amount are taken and placed into an electrolytic tank, stirring is carried out at a constant speed at the temperature of 25-80 DEG C until source substances are completely dissolved, and clear and transparent electrolyte is obtained; (2) a constant current or constant voltage electrolytic deposition method is adopted, the copper or indium or gallium metal simple substance is formed on the surface of a substrate of a work electrode in an electrolytic deposition mode, the temperature is controlled to be 25-150 DEG C, and deposition time is 0.5-4h. According to the method, a copper or indium or gallium metal simple substance deposition layer is prepared in imidazolium-based ionic liquid in the electrolytic deposition mode for the first time. The method is free of poison, environmentally friendly, simple and safe to operate and good in reproducibility. The electrolyte has good dispersing power and covering power, the deposition layer with good performance can be obtained within a wide current density range and within a wide potential range, crystals of the obtained deposition layer are fine, and the appearance of the obtained deposition layer is smooth and bright.
Description
Technical field
The invention belongs to material technology field, relate to a kind of method of ionic liquid electrodeposition copper, indium, gallium metal simple substance.
Background technology
Copper is one of modal plated metal.Copper plate is fabulous bottoming coating, be widely used in engineering and ornamental field, be mainly used in plastics, printed-wiring board (PWB), zine pressure casting, bumper, printing press roller bearing, refining and electroforming, in semi-conductor connection technique, on aluminium, copper facing plays an important role.In numerous electro-coppering systems, only alkaline cyanide, pyrophosphate salt, vitriol and fluoroborate system have industrial value at present, and other system solutions are unstable, effectively in current density range, can not get qualified coating.But these can be used for industrial electro-coppering system and more or less also have some defects, such as alkaline cyanide system has severe toxicity, environment are had to serious harm, and operational safety and wastewater treatment be very scabrous problem all, and have at present substituted trend; Vitriol and fluoroborate system have stronger acidity, and production unit is had to stronger corrodibility.
Gallium is a kind of silvery white metal of softness, is widely used in photoelectron (as LED lamp), the non-linear and field such as quantum optics, San Si family semiconductor product, also has application in addition at aspects such as alloy, computer and DVD.Due to the extensive application of gallium in San Si family semiconductor product, strictly control its depositional texture and be very important, and galvanic deposit is normally used for material, especially transition metal and semiconductor compound that preparation has thin layer, dispersion and nanostructure characteristic.Gallium is extracted usually used as the byproduct of aluminium zinc industry.Because a large amount of liberations of hydrogen in the aqueous solution cause very low current efficiency and inhomogeneous deposition layer, in water solution system, galvanic deposit gallium is unsuitable for industrial production.
Indium metal is mainly for the manufacture of the raw material of low melting alloy, bearing metal, semi-conductor, electric light source etc., at present also considerably less about the report of aqueous solution electrodeposition indium, the report of ionic liquid electrodeposition indium is mainly seen in the article relevant with the semiconductor material that contains indium.
In addition, copper-indium-gallium-selenium alloy is one of the most promising absorbing layer of thin film solar cell material.Copper prepared by galvanic deposit, indium and gallium monometallic can be used as the precursor material of copper-indium-galliun-selenium film solar cell.The method of preparing at present copper-indium-galliun-selenium film solar cell absorption layer is all very expensive, and galvanic deposit is a kind of method of low-cost high-efficiency.
Owing to thering is good chemistry and thermal stability, negligible vapour pressure almost, good electroconductibility and the very wide good electrochemical properties such as electrochemical window, ionic liquid can be used as the solvent of galvanic deposit electrolytic solution, and the metal such as copper, gallium, indium with premium properties is prepared in galvanic deposit.Il electrolyte system has the features such as chemistry and Heat stability is good, non-volatile, operational safety, can obtain the metal deposition layer of thin brilliant densification, easy control of structure system.
Summary of the invention
The invention provides a kind of adopt ionic liquid as solvent galvanic deposit prepare the method for copper, indium, gallium metal simple substance, can obtain consistent, fine and closely woven smooth, the settled layer that crystal grain is tiny of light at substrate surface, electrolytic solution simple and stable, operation and maintenance is convenient and safe, has solved the problems such as water solution system is prepared copper, indium, gallium metal simple substance electrolytic solution is unstable, technical process is complicated.
The object of the invention is to be achieved through the following technical solutions:
A method for ionic liquid electrodeposition metal simple-substance, concrete steps are as follows:
One, the ionic liquid and the source metal material (copper, indium or gallium ion) that measure aequum are placed in electrolyzer, be at the uniform velocity stirred to source material dissolve completely at 25 ~ 80 ℃, obtain the electrolytic solution of clear.
In this step, in the process for preparation of described electrolytic solution, if at 25 ℃, best airtight stirring, if can stir at 80 ℃ under open environment.
In this step, described ionic liquid is glyoxaline ion liquid, from take 1 – Wan Ji – 3 – Methylimidazoles, as cationic ionic liquid, select, comprise 1 – Wan Ji – 3 – Methylimidazole nitrate, 1 – Wan Ji – 3 – Methylimidazole mesylates, 1 – Wan Ji – 3 – Methylimidazole methyl-sulfates, 1 – Wan Ji – 3 – Methylimidazole trifluoroacetates, 1 – Wan Ji – 3 – Methylimidazole acetate, 1 – Wan Ji – 3 – Methylimidazole benzoic acid salt, 1 – Wan Ji – 3 – Methylimidazole asccharin, 1 – Wan Ji – 3 – Methylimidazole dicyanamides, 1 – Wan Ji – 3 – Methylimidazole fluoroform sulphonates and 1 – Wan Ji – 3 – Methylimidazole hexafluorophosphates etc., preferential 1 – Ding Ji – 3 – Methylimidazole fluoroform sulphonates or the 1 – Ding Ji – 3 – Methylimidazole hexafluorophosphates selected.
In this step, the source material of described copper, indium, gallium ion is muriate, nitrate or the vitriol of copper, indium, gallium ion, the concentration range of active material be from 5 mmol/L to its solubility limit value, preferentially selecting concentration range is 10 ~ 100 mmol/L.
Two, adopt the electro-deposition method of continuous current or constant voltage, at substrate surface acid copper, indium or the gallium metal simple substance of working electrode, controlling temperature is 25 ~ 150 ℃, and depositing time is 0.5 ~ 4 h.
In this step, described Constant Electric Current deposition be take metallic copper anodes during with inert anode or Constant Electric Current deposited copper and be take gallium anode when to electrode, Constant Electric Current deposition gallium and take indium metal anode when electrode, Constant Electric Current are deposited to indium as to electrode.
In this step, described constant voltage galvanic deposit three electrode electrolysers, wherein take platinum or silver as reference electrode, and the metallic copper anodes of take when inert anode or constant voltage acid copper be take gallium anode when to electrode, constant voltage galvanic deposit gallium and be take indium metal anode when to electrode, constant voltage galvanic deposit indium as to electrode.
In this step, described Constant Electric Current deposition method comprises following two steps: one, substrate surface, anode electrode are placed in to electrolytic solution; Two, the continuous current applying between substrate surface and anode, starts galvanic deposit.
In this step, described constant voltage electro-deposition method comprises following two steps: one, substrate surface, anode and reference electrode are placed in to electrolytic solution; Two, between substrate surface and reference electrode, apply constant voltage, start galvanic deposit.
In this step, current density during described continuous current galvanic deposit is 0.05 ~ 4 A/dm
2, voltage during constant voltage galvanic deposit is-1 ~-2.2 V vs. Pt.
In this step, voltage during described constant voltage acid copper is-1 ~-2.2 V vs. Pt, and voltage range during constant voltage galvanic deposit gallium is-1.8 ~-2.2 V vs. Pt, and voltage range during constant voltage galvanic deposit indium is-1.6 ~-2.2 V vs. Pt.
The present invention first in glyoxaline ion liquid galvanic deposit prepare copper, indium or gallium metal simple substance settled layer.The method asepsis environment-protecting, safety simple to operate, reproducibility is good.Electrolytic solution has excellent dispersive ability and covering power, and all can obtain having the settled layer of superperformance with potential range in very wide current density range, and institute's settled layer crystallization that obtains is fine and closely woven, flat appearance light.
Accompanying drawing explanation
Fig. 1 is the microscopic appearance SEM test pattern of the copper coating obtaining on molybdenum matrix under constant potential condition in embodiment one;
Fig. 2 is the microscopic appearance SEM test pattern of the gallium coating obtaining on molybdenum matrix under constant potential condition in embodiment two;
Fig. 3 is the microscopic appearance SEM test pattern of the indium coating obtaining on molybdenum matrix under constant potential condition in embodiment three.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further described; but be not limited to this; every technical solution of the present invention is modified or is equal to replacement, and not departing from the spirit and scope of technical solution of the present invention, all should be encompassed in protection scope of the present invention.
Embodiment one: present embodiment provide a kind of from il electrolyte galvanic deposit prepare the method for copper simple substance settled layer, concrete operation step is as follows:
One, preparation electrolytic solution: measure a certain amount of 1-butyl-3-Methylimidazole fluoroform sulphonate ionic liquid, dry in drying baker more than 24 hours, as far as possible the water in deionizing liquid.Take a certain amount of anhydrous cupric chloride and add the ionic liquid after oven dry, the concentration that makes cupric ion in electrolytic solution is 50 mmol/L, stirs electrolytic solution cupric chloride is dissolved completely.
Two, acid copper: use copper coin as anode, as cathode substrate, adopt method galvanic deposit 2 h at 100 ℃ of continuous current with nickel, the current density of using is 2 A/dm
2, the voltage using is-1.2 V vs. Pt.The microscopic appearance of gained settled layer as shown in Figure 1.
Present embodiment, ionic liquid used is commercial ion liquid, purity is 99%.
In present embodiment, anhydrous cupric chloride also should be dried before using.
In present embodiment, while stirring electrolytic solution, if operation at normal temperatures should seal electrolytic solution, prevent that it from absorbing water from air; If stir at 80 ~ 100 ℃, need not seal, electrolytic solution is tawny after dissolving.
In present embodiment, anode and negative electrode all must be dried after pre-treatment, in case bring water into electrolytic solution.
Embodiment two: present embodiment provide a kind of from il electrolyte galvanic deposit prepare the method for gallium simple substance settled layer, different from embodiment one: to take a certain amount of anhydrous chlorides of rase gallium and add 1 – Ding Ji – 3 – Methylimidazole hexafluorophosphate ionic liquids after oven dry, the concentration that makes gallium ion in electrolytic solution is 60 mmol/L, stir electrolytic solution gallium chloride is dissolved completely, potentiostatic electrodeposition under-2.0 V vs. Pt.The microscopic appearance of gained gallium settled layer as shown in Figure 2.
In present embodiment, while taking anhydrous chlorides of rase gallium, should under water-less environment, operate, such as glove box.If find in taking process, gallium chloride absorbs water, can be by removing the moisture content in electrolytic solution 120 ℃ of stirrings.
Embodiment three: present embodiment provide a kind of from il electrolyte galvanic deposit prepare the method for indium simple substance settled layer, different from embodiment one: to take a certain amount of anhydrous indium chloride and add 1 – Ding Ji – 3 – Methylimidazole mesylate ionic liquids after oven dry, the concentration that makes gallium ion in electrolytic solution is 40 mmol/L, stirring electrolytic solution dissolves indium chloride completely,, potentiostatic electrodeposition under-1.8 V vs. Pt.The microscopic appearance of gained indium settled layer as shown in Figure 3.
Embodiment four: present embodiment is different from embodiment one: adopt the method for continuous current to carry out galvanic deposit at 50 ℃, the current density of using is 1 A/dm
2.
Embodiment five: what present embodiment was different from embodiment two is to adopt the method for continuous current to carry out galvanic deposit at 50 ℃, and the current density of using is 0.5 A/dm
2.
Embodiment six: what present embodiment was different from embodiment three is to adopt the method for continuous current to carry out galvanic deposit at 50 ℃, and the current density of using is 0.5 A/dm
2.
Embodiment seven: what present embodiment was different from embodiment one is that used cathode substrate is low-carbon (LC) steel disc.
Embodiment eight: what present embodiment was different from embodiment one is that used cathode substrate is zinc metal sheet.
Embodiment nine: what present embodiment was different from embodiment one is that used ionic liquid is 1 – Bing Ji – 3 – Methylimidazole nitrate.
Embodiment ten: what present embodiment was different from embodiment one is that used ionic liquid is 1 – Yi Ji – 3 – Methylimidazole acetate.
Claims (10)
1. the method for ionic liquid electrodeposition metal simple-substance, is characterized in that described method steps is as follows:
One, the ionic liquid and the metal ion source material that measure aequum are placed in electrolyzer, be at the uniform velocity stirred to source material dissolve completely at 25 ~ 80 ℃, obtain the electrolytic solution of clear, and described metal ion source material is copper, indium or gallium ion;
Two, adopt the electro-deposition method of continuous current or constant voltage, at substrate surface acid copper, indium or the gallium metal simple substance of working electrode, controlling temperature is 25 ~ 150 ℃, and depositing time is 0.5 ~ 4 h.
2. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, is characterized in that described ionic liquid is glyoxaline ion liquid.
3. the method for ionic liquid electrodeposition metal simple-substance according to claim 2, is characterized in that described glyoxaline ion liquid is cationic ionic liquid for take 1 – Wan Ji – 3 – Methylimidazoles.
4. the method for ionic liquid electrodeposition metal simple-substance according to claim 3, it is characterized in that described take 1 – Wan Ji – 3 – Methylimidazoles as cationic ionic liquid be 1 – Wan Ji – 3 – Methylimidazole nitrate, 1 – Wan Ji – 3 – Methylimidazole mesylates, 1 – Wan Ji – 3 – Methylimidazole methyl-sulfates, 1 – Wan Ji – 3 – Methylimidazole trifluoroacetates, 1 – Wan Ji – 3 – Methylimidazole acetate, 1 – Wan Ji – 3 – Methylimidazole benzoic acid salt, 1 – Wan Ji – 3 – Methylimidazole asccharin, 1 – Wan Ji – 3 – Methylimidazole dicyanamides, 1 – Wan Ji – 3 – Methylimidazole fluoroform sulphonates or 1 – Wan Ji – 3 – Methylimidazole hexafluorophosphates.
5. the method for ionic liquid electrodeposition metal simple-substance according to claim 3, is characterized in that described take 1 – Wan Ji – 3 – Methylimidazoles as cationic ionic liquid as 1 – Ding Ji – 3 – Methylimidazole fluoroform sulphonates or 1 – Ding Ji – 3 – Methylimidazole hexafluorophosphates.
6. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, is characterized in that muriate, nitrate or vitriol that described metal ion source material is metal ion.
7. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, the concentration range that it is characterized in that described metal ion source material is for from 5 mmol/L to its solubility limit value.
8. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, is characterized in that the concentration range of described metal ion source material is 10 ~ 100 mmol/L.
9. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, the current density while it is characterized in that described continuous current galvanic deposit is 0.05 ~ 4 A/dm
2, voltage during constant voltage galvanic deposit is-1 ~-2.2 V vs. Pt.
10. the method for ionic liquid electrodeposition metal simple-substance according to claim 1, voltage while it is characterized in that described constant voltage acid copper is-1 ~-2.2 V vs. Pt, voltage range during constant voltage galvanic deposit gallium is-1.8 ~-2.2 V vs. Pt, and voltage range during constant voltage galvanic deposit indium is-1.6 ~-2.2 V vs. Pt.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104499002A (en) * | 2014-12-10 | 2015-04-08 | 上海大学 | Method for preparing copper-iron nano plated layer from low-grade sulfide ore through direct electro-deposition |
| CN108728641A (en) * | 2018-06-22 | 2018-11-02 | 汉能新材料科技有限公司 | A kind of recovery method of GaAs waste material |
| CN114277411A (en) * | 2021-11-30 | 2022-04-05 | 中国石油大学(北京) | Method for electrodepositing copper by using ultrasonic-assisted copper-aluminum bimetal composite ionic liquid |
| CN114540886A (en) * | 2022-02-15 | 2022-05-27 | 中国石油大学(北京) | Method for preparing copper foil based on copper-containing composite ionic liquid electrodeposition |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076617A (en) * | 2004-12-10 | 2007-11-21 | 默克专利股份公司 | Electrochemical deposition of tantalum and/or copper in ionic liquids |
| CN101802262A (en) * | 2007-08-06 | 2010-08-11 | 勒芬天主教大学 | deposition from ionic liquids |
| CN101988210A (en) * | 2010-12-03 | 2011-03-23 | 沈阳师范大学 | Ionic liquid indium chloride/n-butyl pyridine chloride system electroplating solution |
| CN102061492A (en) * | 2010-12-09 | 2011-05-18 | 沈阳师范大学 | Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system |
| CN102574250A (en) * | 2009-09-08 | 2012-07-11 | 阿斯特恩先进材料有限公司 | Soldering process using electrodeposited indium and/or gallium, and article comprising an intermediate layer with indium and/or gallium |
| CN102741458A (en) * | 2009-09-08 | 2012-10-17 | 西安大略大学 | Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells |
| CN103031571A (en) * | 2012-12-13 | 2013-04-10 | 彩虹集团公司 | Method for electrodepositing gallium at low temperature by using ionic liquid |
| CN103343373A (en) * | 2013-07-06 | 2013-10-09 | 哈尔滨工业大学 | Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials |
| CN103639420A (en) * | 2013-11-27 | 2014-03-19 | 昆明理工大学 | Method for utilizing low co-fusion type ionic liquid electro-deposition to manufacture nanometer copper powder |
| CN103658637A (en) * | 2013-12-12 | 2014-03-26 | 昆明理工大学 | Method for preparing arborization fine copper powder in electrolysis mode |
| CN103779438A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | Method for preparing CuInxGaySez prefabricated layer by electrochemical deposition |
-
2014
- 2014-08-06 CN CN201410382539.8A patent/CN104141151A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076617A (en) * | 2004-12-10 | 2007-11-21 | 默克专利股份公司 | Electrochemical deposition of tantalum and/or copper in ionic liquids |
| CN101802262A (en) * | 2007-08-06 | 2010-08-11 | 勒芬天主教大学 | deposition from ionic liquids |
| CN102574250A (en) * | 2009-09-08 | 2012-07-11 | 阿斯特恩先进材料有限公司 | Soldering process using electrodeposited indium and/or gallium, and article comprising an intermediate layer with indium and/or gallium |
| CN102741458A (en) * | 2009-09-08 | 2012-10-17 | 西安大略大学 | Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells |
| CN101988210A (en) * | 2010-12-03 | 2011-03-23 | 沈阳师范大学 | Ionic liquid indium chloride/n-butyl pyridine chloride system electroplating solution |
| CN102061492A (en) * | 2010-12-09 | 2011-05-18 | 沈阳师范大学 | Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system |
| CN103779438A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | Method for preparing CuInxGaySez prefabricated layer by electrochemical deposition |
| CN103031571A (en) * | 2012-12-13 | 2013-04-10 | 彩虹集团公司 | Method for electrodepositing gallium at low temperature by using ionic liquid |
| CN103343373A (en) * | 2013-07-06 | 2013-10-09 | 哈尔滨工业大学 | Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials |
| CN103639420A (en) * | 2013-11-27 | 2014-03-19 | 昆明理工大学 | Method for utilizing low co-fusion type ionic liquid electro-deposition to manufacture nanometer copper powder |
| CN103658637A (en) * | 2013-12-12 | 2014-03-26 | 昆明理工大学 | Method for preparing arborization fine copper powder in electrolysis mode |
Non-Patent Citations (3)
| Title |
|---|
| 吕仁庆: "1-乙基-3-甲基咪唑和氯化铟离子液体的从头计算", 《鲁东大学学报(自然科学版)》 * |
| 吴春莲等: "用含氰基离子液体绿色制备纳米铜微晶研究", 《青海师范大学学报(自然科学版)》 * |
| 杨坤等: "离子液体电沉积铜及其合金的研究现状", 《冶金丛刊》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104499002A (en) * | 2014-12-10 | 2015-04-08 | 上海大学 | Method for preparing copper-iron nano plated layer from low-grade sulfide ore through direct electro-deposition |
| CN108728641A (en) * | 2018-06-22 | 2018-11-02 | 汉能新材料科技有限公司 | A kind of recovery method of GaAs waste material |
| CN114277411A (en) * | 2021-11-30 | 2022-04-05 | 中国石油大学(北京) | Method for electrodepositing copper by using ultrasonic-assisted copper-aluminum bimetal composite ionic liquid |
| CN114277411B (en) * | 2021-11-30 | 2022-12-27 | 中国石油大学(北京) | Method for electrodepositing copper by using ultrasonic-assisted copper-aluminum bimetal composite ionic liquid |
| CN114540886A (en) * | 2022-02-15 | 2022-05-27 | 中国石油大学(北京) | Method for preparing copper foil based on copper-containing composite ionic liquid electrodeposition |
| CN114540886B (en) * | 2022-02-15 | 2022-12-27 | 中国石油大学(北京) | Method for preparing copper foil based on copper-containing composite ionic liquid electrodeposition |
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Application publication date: 20141112 |