CN104135233A - Low-noise voltage-controlled oscillator biasing circuit and frequency source self-calibration method - Google Patents
Low-noise voltage-controlled oscillator biasing circuit and frequency source self-calibration method Download PDFInfo
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- CN104135233A CN104135233A CN201310159077.9A CN201310159077A CN104135233A CN 104135233 A CN104135233 A CN 104135233A CN 201310159077 A CN201310159077 A CN 201310159077A CN 104135233 A CN104135233 A CN 104135233A
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Abstract
The invention discloses a low-noise voltage-controlled oscillator biasing circuit and a frequency source self-calibration method. A voltage division circuit comprises a resistor R1, a first bipolar junction transistor BJT1 and a second bipolar junction transistor BJT2 which are connected in series in sequence, wherein the R1 is connected with the collector of the BJT1; the emitter of the BJT1 is connected with the collector of the BJT2; the collector of the BJT1 is connected with the base of the BJT1; and the collector of the BJT2 is connected with the base of the BJT2. In a self-calibration state, voltage output by the biasing circuit is connected with the tuning voltage input end and the power supply end of an LC voltage-controlled oscillator respectively. The output noise of the biasing circuit disclosed by the invention is low, a filter capacitor does not need to be added externally, the pins of a chip can be effectively reduced, and the cost is reduced; and when a frequency source is in the self-calibration state, the voltage output by the biasing circuit is connected with the tuning voltage input end and the power supply end of the LC voltage-controlled oscillator respectively, so that influences caused by the change of an output DC (Direct-Current) point due to changes of the resistor and the BJTs in a whole temperature range can be effectively eliminated, and change of the frequency source along with temperature change in the self-calibration state is avoided.
Description
Technical field
The present invention relates to a kind of low-noise voltage-controlled oscillator biasing circuit and frequency source method for self-calibrating.
Background technology
At present, what frequency source circuit was used is LC voltage controlled oscillator, and as shown in Figure 1, it is mainly made up of negative resistance, inductance and electric capacity its structure, and its power output is:
wherein, L is inductance, and C is electric capacity, and capacitor C is made up of three parts of capacitor array of parasitic capacitance, variable capacitance and control able to programme again.The effect of capacitor C 2 and capacitor C 3 is every directly, and pass through other biasing circuit to DC point of LC voltage controlled oscillator, make the capacitance of variable capacitance be linear change along with the variation of LC voltage controlled oscillator both end voltage (power end DC and tuning voltage input Vtune) pressure reduction, its variation relation as shown in Figure 2.
As shown in Figure 3, traditional biasing circuit generally completes dividing potential drop by resistance, but because the noise of the bleeder circuit being made up of series resistance R4, R5 is relatively large, need to carry out filtering at the outside large electric capacity (capacitor C 4 in Fig. 3) that increases of biasing circuit, the output pin that this has increased biasing circuit, has increased circuit cost.
Summary of the invention
An object of the present invention is to provide a kind of Novel low noise voltage controlled oscillator biasing circuit, adopt BJT pipe and the height of base stage and collector electrode short circuit to be worth poly resistance as partial pressure unit, biasing circuit output noise is less, and needn't add filter capacitor in outside, only need add in biasing circuit inside little electric capacity, the pin that can effectively reduce chip, reduces costs;
Another object of the present invention is to provide a kind of novel frequency source method for self-calibrating, at frequency source circuit during in self calibration state, the voltage of biasing circuit output joins with tuning voltage input and the power end of LC voltage controlled oscillator respectively, the output DC point that can effectively eliminate the variation within the scope of total temperature of resistance and BJT pipe and cause changes the impact bringing, and avoids frequency source in the time of self calibration state be subject to the variation of temperature and change.
The object of the invention is to be achieved through the following technical solutions: low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with voltage controlled oscillator, for the voltage controlled oscillator in frequency source circuit provides biasing, it is by constant voltage source, bleeder circuit and filter capacitor C1 composition, described bleeder circuit comprises the resistance R 1 of series connection successively, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined,
The first dividing potential drop output branch road in parallel between the base stage of resistance R 1 and the first bipolar junction transistor BJT1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2; The first dividing potential drop output branch road is connected in series with filter capacitor C1 with after the second dividing potential drop output branch circuit parallel connection.
Further, described resistance R 1 is high value poly resistance.
Further, on the first described dividing potential drop output branch road and the second dividing potential drop output branch road, be respectively equipped with switch.
The emitter of the second bipolar junction transistor BJT2 and filter capacitor C1 be ground connection respectively.
Low-noise voltage-controlled oscillator biasing circuit frequency source method for self-calibrating, it comprises the following steps:
(1) frequency source circuit is in the time that closed loop is normally worked, and the voltage of biasing circuit output is connected with the power end of LC voltage controlled oscillator;
(2) frequency source circuit is in the time of open loop self calibration state, and the voltage of biasing circuit output is connected with tuning voltage input and the power end of LC voltage controlled oscillator respectively.
Described LC voltage controlled oscillator is made up of two negative resistances, inductance ind and capacitor control circuit parallel with one another, and capacitor control circuit is again by the capacitance C2 connecting successively, variable capacitance C
vAR1, variable capacitance C
vAR2with capacitance C3 composition, between capacitance C2 and capacitance C3, be parallel with resistance R 2 and the resistance R 3 of mutual series connection, between resistance R 2 and resistance R 3, connect the power end of LC voltage controlled oscillator, variable capacitance C
vAR1with variable capacitance C
vAR2between connect the tuning voltage input of LC voltage controlled oscillator.
The invention has the beneficial effects as follows:
1) adopt base stage and the BJT of collector electrode short circuit to manage the structure of connecting with high value poly resistance as partial pressure unit, compared with traditional biasing circuit that is carried out dividing potential drop by resistance series connection, biasing circuit output noise is less, and needn't add filter capacitor in outside, only need add in biasing circuit inside little electric capacity, the pin that can effectively reduce chip, reduces costs;
2) at frequency source circuit during in self calibration state, the voltage of biasing circuit output joins with tuning voltage input and the power end of LC voltage controlled oscillator respectively, the output DC point that can effectively eliminate the variation within the scope of total temperature of resistance and BJT pipe and cause changes the impact bringing, and avoids frequency source in the time of self calibration state be subject to the variation of temperature and change.
Brief description of the drawings
Fig. 1 is LC voltage-controlled oscillator circuit structural representation;
Fig. 2 is that the capacitance of variable capacitance in LC voltage controlled oscillator is along with the change curve of oscillator both end voltage pressure reduction;
Fig. 3 is traditional bias circuit construction schematic diagram;
Fig. 4 is bias circuit construction schematic diagram of the present invention;
Fig. 5 is biasing circuit of the present invention and traditional resistor biasing circuit of divided voltage output voltage noise curve comparison diagram.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
As shown in Figure 4, low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with LC voltage controlled oscillator, for the LC voltage controlled oscillator in frequency source circuit provides voltage bias point, it is made up of constant voltage source LDO_VDD, bleeder circuit and filter capacitor C1, described bleeder circuit comprises high value poly resistance R 1, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2 of series connection successively, and high value poly resistance R 1 is carried out dividing potential drop with the bleeder circuit that BJT pipe is composed in series to the voltage of LDO output.High value poly resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, and the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined;
The first dividing potential drop output branch road in parallel between high value poly resistance R 1 and the base stage of the first bipolar junction transistor BJT1, the first dividing potential drop output branch road output voltage point DC1, the first dividing potential drop output branch road is provided with K switch G1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, the second dividing potential drop output branch road output voltage point DC2, the second dividing potential drop output branch road is provided with K switch G2.By the optionally voltage DC of output bias circuit of control of K switch G1 and KG2, the selection of electrical voltage point DC1 and electrical voltage point DC2 is the linear change interval of the capacitance based on variable capacitance mainly, as the dotted portion of Fig. 2.
The first dividing potential drop output branch road is connected in series with filter capacitor C1 with after the second dividing potential drop output branch circuit parallel connection.
The emitter of the second bipolar junction transistor BJT2 and filter capacitor C1 be ground connection respectively.
As seen in Figure 5: under same LDO output voltage condition, the output voltage noise of biasing circuit that the present invention adopts (in-17dB left and right) is starkly lower than the output voltage noise (in-15dB left and right) of traditional employing electric resistance partial pressure configuration biases circuit.
Low-noise voltage-controlled oscillator biasing circuit frequency source method for self-calibrating, it comprises the following steps:
(1) frequency source circuit is in the time that closed loop is normally worked, and the voltage of biasing circuit output is connected with the power end DC end of LC voltage controlled oscillator;
(2) frequency source circuit is in the time of open loop self calibration state, and the voltage of biasing circuit output is connected with tuning voltage input Vtune end and the power end DC end of LC voltage controlled oscillator respectively.
Described LC voltage controlled oscillator is made up of two negative resistances, inductance ind and capacitor control circuit parallel with one another, and capacitor control circuit is again by the capacitance C2 connecting successively, variable capacitance C
vAR1, variable capacitance C
vAR2with capacitance C3 composition, between capacitance C2 and capacitance C3, be parallel with resistance R 2 and the resistance R 3 of mutual series connection, between resistance R 2 and resistance R 3, connect the power end of LC voltage controlled oscillator, variable capacitance C
vAR1with variable capacitance C
vAR2between connect the tuning voltage input of LC voltage controlled oscillator.
At frequency source circuit during in self calibration state, the variable capacitance C in LC voltage controlled oscillator
vAR1one terminating resistor R2, the DC end (can be by opening K switch G1 or KG2, optionally export the DC1 of the first dividing potential drop output branch road output or the DC2 of the second dividing potential drop output branch road output) of a termination biasing circuit; Variable capacitance C in LC voltage controlled oscillator
vAR2one terminating resistor R3, the DC end of a termination biasing circuit.
The voltage DC of biasing circuit not only receives the DC port in LC voltage controlled oscillator, and the Vtune that receives LC voltage controlled oscillator holds, this is because the BJT pipe Vbe in biasing circuit can change along with the variation of temperature, make output offset voltage DC1 and the DC2 also can variation with temperature and change, in observation Fig. 2, variable capacitance capacitance is along with both end voltage pressure reduction linear change curve is known, the curve comparatively central point of linear part is the position equal in variable capacitance both end voltage, therefore, the two ends of variable capacitance are all received on the output voltage DC of biasing circuit, make in the time of self calibration state, frequency source is not subject to the variation of temperature and changes.
Claims (6)
1. low-noise voltage-controlled oscillator biasing circuit, be used in conjunction with voltage controlled oscillator, for the voltage controlled oscillator in frequency source circuit provides biasing, it is characterized in that: it is by constant voltage source, bleeder circuit and filter capacitor C1 composition, described bleeder circuit comprises the resistance R 1 of series connection successively, the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2, resistance R 1 is connected with the collector electrode of the first bipolar junction transistor BJT1, the emitter of the first bipolar junction transistor BJT1 is connected with the collector electrode of the second bipolar junction transistor BJT2, the collector electrode of the first bipolar junction transistor BJT1 and its base stage are joined, the collector electrode of the second bipolar junction transistor BJT2 and its base stage are joined,
The first dividing potential drop output branch road in parallel between the base stage of resistance R 1 and the first bipolar junction transistor BJT1; The second dividing potential drop output branch road in parallel between the base stage of the emitter of the first bipolar junction transistor BJT1 and the second bipolar junction transistor BJT2; The first dividing potential drop output branch road is connected in series with filter capacitor C1 with after the second dividing potential drop output branch circuit parallel connection.
2. low-noise voltage-controlled oscillator biasing circuit according to claim 1, is characterized in that: described resistance R 1 is high value poly resistance.
3. low-noise voltage-controlled oscillator biasing circuit according to claim 1, is characterized in that: on the first described dividing potential drop output branch road and the second dividing potential drop output branch road, be respectively equipped with switch.
4. low-noise voltage-controlled oscillator biasing circuit according to claim 1, is characterized in that: the emitter of the second described bipolar junction transistor BJT2 and filter capacitor C1 be ground connection respectively.
5. low-noise voltage-controlled oscillator biasing circuit frequency source method for self-calibrating, is characterized in that: it comprises the following steps:
(1) frequency source circuit is in the time that closed loop is normally worked, and the voltage of biasing circuit output is connected with the power end of LC voltage controlled oscillator;
(2) frequency source circuit is in the time of open loop self calibration state, and the voltage of biasing circuit output is connected with tuning voltage input and the power end of LC voltage controlled oscillator respectively.
6. low-noise voltage-controlled oscillator biasing circuit frequency source method for self-calibrating according to claim 5, it is characterized in that: described LC voltage controlled oscillator is made up of two negative resistances, inductance ind and capacitor control circuit parallel with one another, capacitor control circuit is again by the capacitance C2 connecting successively, variable capacitance C
vAR1, variable capacitance C
vAR2with capacitance C3 composition, between capacitance C2 and capacitance C3, be parallel with resistance R 2 and the resistance R 3 of mutual series connection, between resistance R 2 and resistance R 3, connect the power end of LC voltage controlled oscillator, variable capacitance C
vAR1with variable capacitance C
vAR2between connect the tuning voltage input of LC voltage controlled oscillator.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9559667B1 (en) | 2015-08-21 | 2017-01-31 | International Business Machines Corporation | Oscillator phase noise using active device stacking |
CN106961277A (en) * | 2017-04-18 | 2017-07-18 | 江苏信息职业技术学院 | A kind of VCO circuits of low-power high-performance |
US9831830B2 (en) | 2015-08-21 | 2017-11-28 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
CN114123990A (en) * | 2021-10-27 | 2022-03-01 | 锐石创芯(深圳)科技有限公司 | Biasing circuit and radio frequency power amplifier |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1671037A (en) * | 2004-08-04 | 2005-09-21 | 威盛电子股份有限公司 | Symmetrized voltage controlled oscillator system |
JP2006352423A (en) * | 2005-06-15 | 2006-12-28 | Murata Mfg Co Ltd | Voltage control oscillator |
US20080048795A1 (en) * | 2006-08-22 | 2008-02-28 | Kabushiki Kaisha Toshiba | Voltage controlled oscillator, bias device for voltage controlled oscillator, bias adjustment program for voltage control oscillator |
CN101388645A (en) * | 2008-10-24 | 2009-03-18 | 武汉大学 | Method for optimizing phase noise of voltage controlled oscillator and voltage controlled oscillator |
CN102195639A (en) * | 2011-04-18 | 2011-09-21 | 上海信朴臻微电子有限公司 | Low-noise bias circuit and broadband voltage-controlled oscillation circuit |
US20120025921A1 (en) * | 2010-07-31 | 2012-02-02 | Quintic Holdings | Low Noise VCO Circuit Having Low Noise Bias |
CN203206179U (en) * | 2013-05-02 | 2013-09-18 | 成都国腾电子技术股份有限公司 | Low-noise bias circuit of voltage controlled oscillator |
-
2013
- 2013-05-02 CN CN201310159077.9A patent/CN104135233B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1671037A (en) * | 2004-08-04 | 2005-09-21 | 威盛电子股份有限公司 | Symmetrized voltage controlled oscillator system |
JP2006352423A (en) * | 2005-06-15 | 2006-12-28 | Murata Mfg Co Ltd | Voltage control oscillator |
US20080048795A1 (en) * | 2006-08-22 | 2008-02-28 | Kabushiki Kaisha Toshiba | Voltage controlled oscillator, bias device for voltage controlled oscillator, bias adjustment program for voltage control oscillator |
CN101388645A (en) * | 2008-10-24 | 2009-03-18 | 武汉大学 | Method for optimizing phase noise of voltage controlled oscillator and voltage controlled oscillator |
US20120025921A1 (en) * | 2010-07-31 | 2012-02-02 | Quintic Holdings | Low Noise VCO Circuit Having Low Noise Bias |
CN102195639A (en) * | 2011-04-18 | 2011-09-21 | 上海信朴臻微电子有限公司 | Low-noise bias circuit and broadband voltage-controlled oscillation circuit |
CN203206179U (en) * | 2013-05-02 | 2013-09-18 | 成都国腾电子技术股份有限公司 | Low-noise bias circuit of voltage controlled oscillator |
Non-Patent Citations (2)
Title |
---|
刘树林等: "《低频电子线路》", 31 August 2007 * |
常昌远等: ""一种低相位噪声LC压控振荡器的设计与实现"", 《东南大学学报(自然科学版)》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9559667B1 (en) | 2015-08-21 | 2017-01-31 | International Business Machines Corporation | Oscillator phase noise using active device stacking |
US9780725B2 (en) | 2015-08-21 | 2017-10-03 | International Business Machines Corporation | Improving oscillator phase noise using active device stacking |
US9831830B2 (en) | 2015-08-21 | 2017-11-28 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
US10171031B2 (en) | 2015-08-21 | 2019-01-01 | International Business Machines Corporation | Oscillator phase noise using active device stacking |
US10236825B2 (en) | 2015-08-21 | 2019-03-19 | International Business Machines Corporation | Bipolar junction transistor based switched capacitors |
CN106961277A (en) * | 2017-04-18 | 2017-07-18 | 江苏信息职业技术学院 | A kind of VCO circuits of low-power high-performance |
CN106961277B (en) * | 2017-04-18 | 2023-04-28 | 江苏信息职业技术学院 | VCO circuit with low power and high performance |
CN114123990A (en) * | 2021-10-27 | 2022-03-01 | 锐石创芯(深圳)科技有限公司 | Biasing circuit and radio frequency power amplifier |
CN114123990B (en) * | 2021-10-27 | 2024-06-07 | 锐石创芯(深圳)科技股份有限公司 | Bias circuit and radio frequency power amplifier |
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