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CN104134596B - The absorbing cavity device of suppression gap coupled cavity 2 pi-mode oscillation and adjustment method thereof - Google Patents

The absorbing cavity device of suppression gap coupled cavity 2 pi-mode oscillation and adjustment method thereof Download PDF

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CN104134596B
CN104134596B CN201410379750.4A CN201410379750A CN104134596B CN 104134596 B CN104134596 B CN 104134596B CN 201410379750 A CN201410379750 A CN 201410379750A CN 104134596 B CN104134596 B CN 104134596B
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cavity
absorbing cavity
double
absorbing
double tunning
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CN104134596A (en
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沈斌
丁耀根
顾红红
丁海兵
曹静
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Institute of Electronics of CAS
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Abstract

The invention provides and a kind of suppress the absorbing cavity device of 2 pi-mode oscillations in gap coupled cavity.The double tunning absorbing cavity of high-selenium corn chamber device resonance simultaneously is in TM110Pattern and TM210Pattern, and it is connected to gap coupled cavity by coupled waveguide, can effectively suppress the vibration in gap coupled cavity output circuit with two non-operating modes of 2 π mould field shape distributions, eliminate the unstability of the multiple-beam klystron caused by such vibration, reduce sundry spectrum level.

Description

抑制双间隙耦合腔2π模振荡的吸收腔装置及其调试方法Absorbing cavity device and debugging method for suppressing 2π mode oscillation of double-gap coupled cavity

技术领域technical field

本发明涉及电子行业电真空技术领域,尤其涉及一种抑制双间隙耦合腔2π模振荡的吸收腔装置。The invention relates to the field of electric vacuum technology in the electronics industry, in particular to an absorption cavity device for suppressing 2π-mode oscillation of a double-gap coupling cavity.

背景技术Background technique

为了扩展多注速调管的带宽,通常采用双间隙耦合腔作为宽带输出电路。由于双间隙耦合腔输出电路的二个谐振腔间存在内部反馈,在一定条件下,会引起非工作模式振荡,导致多注速调管电子注电流和电子注通过率下降、引起多注速调管打火。此外,在高频激励下,由于电子注速度变化或少量反转电子和二次电子的存在,将激励起其它非工作模式,形成杂谱,降低了输出频谱的质量,引起发射机输出波导打火和干扰其它微波电子系统。因此,抑制多注速调管非工作模式的振荡对提高多注速调管性能,保证输出频谱重量和工作稳定性,使其在微波电子系统中正常工作,具有重要意义。In order to expand the bandwidth of multi-beam klystrons, double-gap coupled cavities are usually used as broadband output circuits. Due to the internal feedback between the two resonant cavities of the double-gap coupling cavity output circuit, under certain conditions, it will cause non-working mode oscillation, resulting in a decrease in the electronic injection current and electronic injection rate of the multi-beam klystron, causing multi-beam klystron Tube ignition. In addition, under high-frequency excitation, due to the change of electron beam velocity or the existence of a small amount of inverted electrons and secondary electrons, other non-working modes will be excited to form a mixed spectrum, which reduces the quality of the output spectrum and causes the output waveguide of the transmitter to break. fire and interfere with other microwave electronic systems. Therefore, it is of great significance to suppress the oscillation of the non-working mode of the multi-beam klystron to improve the performance of the multi-beam klystron, ensure the output spectrum weight and work stability, and make it work normally in the microwave electronic system.

对于工作频率为低频段(L和S波段)的多注速调管,通常采用工作在π模的双间隙耦合腔输出电路。研究分析和实际制管表明,该输出电路容易产生场分布为2π模结构的非工作模式振荡。为了抑制该类非工作模式振荡产生的杂谱,通常在双间隙耦合腔上外接一个吸收腔,该吸收腔通过耦合口与双间隙耦合腔耦合,抑制谐振频率比工作模式稍高的场形为2π模的TM010模式的振荡。而实际制管工作表明,谐振频率较高,场形为2π模的TM110模式在某些特定条件下也会产生振荡,该振荡同样会严重影响多注速调管直流状态工作的稳定性。For multi-beam klystrons whose operating frequency is low frequency (L and S bands), a dual-gap coupled-cavity output circuit operating in π-mode is usually used. Research analysis and actual tube production show that the output circuit is easy to produce non-working mode oscillation with field distribution of 2π mode structure. In order to suppress the spurious spectrum generated by this kind of non-working mode oscillation, an absorber is usually connected to the double-gap coupling cavity, which is coupled with the double-gap coupling cavity through the coupling port, and the field shape that suppresses the resonant frequency slightly higher than the working mode is Oscillation of the TM 010 mode of the 2π mode. The actual tube production work shows that the TM 110 mode with a high resonance frequency and a 2π-mode field will also oscillate under certain conditions, and this oscillation will also seriously affect the stability of the multi-beam klystron in the DC state.

发明内容Contents of the invention

(一)要解决的技术问题(1) Technical problems to be solved

鉴于上述技术问题,本发明提供了一种抑制双间隙耦合腔2π模振荡的吸收腔装置及其调试方法,以抑制双间隙耦合腔内的非工作模式。In view of the above technical problems, the present invention provides an absorbing cavity device for suppressing 2π-mode oscillation of a double-gap coupling cavity and a debugging method thereof, so as to suppress non-working modes in the double-gap coupling cavity.

(二)技术方案(2) Technical solution

本发明抑制双间隙耦合腔内2π模振荡的吸收腔装置包括:双调谐吸收腔,为中空矩形封闭谐振腔,其第一端封闭,其内侧腔壁至少部分面积具有微波衰减材料;矩形耦合波导,连接于所述双调谐吸收腔的第二端和所述双间隙耦合腔之间,正对所述双间隙耦合腔一侧的耦合槽,用于所述双调谐吸收腔和双间隙耦合腔之间的模式耦合。其中,所述双调谐吸收腔上方开设两个螺孔,通过该两个螺孔,分别向所述双调谐吸收腔内垂直向下插入第一调谐螺钉和第二调谐螺钉,其中,该两个螺孔均位于所述双调谐吸收腔宽边的中心,使该双调谐吸收腔同时谐振于TM110模式和TM210模式。The absorption cavity device for suppressing 2π-mode oscillation in a double-gap coupling cavity of the present invention includes: a double-tuned absorption cavity, which is a hollow rectangular closed resonant cavity, the first end of which is closed, and at least part of the inner cavity wall has microwave attenuating materials; the rectangular coupling waveguide , connected between the second end of the double-tuned absorption cavity and the double-gap coupling cavity, facing the coupling groove on one side of the double-gap coupling cavity, used for the double-tuned absorption cavity and the double-gap coupling cavity mode coupling. Wherein, two screw holes are set above the double-tuning absorption cavity, and through the two screw holes, the first tuning screw and the second tuning screw are inserted vertically downward into the double-tuning absorption cavity respectively, wherein the two The screw holes are all located at the center of the broad side of the double tuned absorbing cavity, so that the double tuned absorbing cavity resonates in the TM 110 mode and the TM 210 mode at the same time.

(三)有益效果(3) Beneficial effects

从上述技术方案可以看出,本发明抑制双间隙耦合腔内2π模振荡的吸收腔装置及其调制方法具有以下有益效果:It can be seen from the above technical scheme that the absorption cavity device and modulation method thereof for suppressing 2π-mode oscillation in a double-gap coupling cavity of the present invention have the following beneficial effects:

(1)双调谐吸收腔同时谐振于TM110模式和TM210模式,其通过耦合波导连接至双间隙耦合腔,从而能够有效地抑制双间隙耦合腔输出电路中具有2π模场形分布的两个非工作模式的振荡,消除由该类振荡引起的多注速调管的不稳定性,同时降低杂谱电平;(1) The double-tuned absorbing cavity resonates in both TM 110 mode and TM 210 mode at the same time, which is connected to the double-gap coupling cavity through a coupling waveguide, so that it can effectively suppress the two gaps with 2π mode field distribution in the output circuit of the double-gap coupling cavity. Oscillation in the non-working mode eliminates the instability of the multi-beam klystron caused by this type of oscillation, and at the same time reduces the noise level;

(2)能同时对具有2π模场形分布的两个非工作模式加载,而对具有π模场形分布的工作模式的加载很小,能保证在抑制非工作模式振荡的同时,对多注速调管的效率和功率-频宽特性影响很小;(2) It can simultaneously load two non-operating modes with 2π-mode field distribution, and the loading on the working mode with π-mode field distribution is very small, which can ensure that while suppressing the oscillation of the non-operating mode, the multi-injection The efficiency and power-bandwidth characteristics of the klystron have little influence;

(3)衰减材料涂覆和烧结在吸收腔内表面,散热好,出气小;(3) The attenuation material is coated and sintered on the inner surface of the absorption cavity, which has good heat dissipation and small outgassing;

(4)体积小,制备和装配工艺简单。(4) The volume is small, and the preparation and assembly process is simple.

附图说明Description of drawings

图1是根据本发明实施例抑制多注速调管双间隙耦合腔2π模振荡的吸收腔装置的纵向剖视图;Fig. 1 is a longitudinal sectional view of an absorber device for suppressing 2π-mode oscillation of a multi-beam klystron double-gap coupling cavity according to an embodiment of the present invention;

图2A为图1所示吸收腔装置与多注速调管双间隙耦合腔装配后的纵向剖视图;Fig. 2A is a longitudinal sectional view after the assembly of the absorption chamber device shown in Fig. 1 and the multi-injection klystron double-gap coupling chamber;

图2B为图1所示吸收腔装置与多注速调管双间隙耦合腔装配后的横向剖视图。Fig. 2B is a transverse cross-sectional view of the absorbing chamber device shown in Fig. 1 assembled with the multi-beam klystron double-gap coupling chamber.

【本发明主要元件】【Main components of the present invention】

100-吸收腔装置;100-absorption chamber device;

110-双调谐吸收腔;110-double tuned absorption cavity;

111-腔体;112-腔盖;111-cavity; 112-cavity cover;

113-微波衰减材料;114-第一调谐螺钉;113-microwave attenuation material; 114-the first tuning screw;

115-第二调谐螺钉;115 - the second tuning screw;

120-矩形耦合波导;120-rectangular coupling waveguide;

121-第一矩形波导孔;122-第二矩形波导孔;121-the first rectangular waveguide hole; 122-the second rectangular waveguide hole;

200-多注速调管双间隙耦合腔;200-multi-beam klystron double-gap coupling cavity;

210-腔体;210-cavity;

211-定位台阶;211-positioning steps;

220-上腔盖;220 - upper chamber cover;

230-下腔盖;230-lower chamber cover;

240-耦合膜片;240-coupling diaphragm;

241、242-耦合槽;243-耦合环;241, 242-coupling groove; 243-coupling ring;

244-输出矩形波导。244 - output rectangular waveguide.

具体实施方式detailed description

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。需要说明的是,在附图或说明书描述中,相似或相同的部分都使用相同的图号。附图中未绘示或描述的实现方式,为所属技术领域中普通技术人员所知的形式。另外,虽然本文可提供包含特定值的参数的示范,但应了解,参数无需确切等于相应的值,而是可在可接受的误差容限或设计约束内近似于相应的值。实施例中提到的方向用语,例如“上”、“下”、“前”、“后”、“左”、“右”等,仅是参考附图的方向。因此,使用的方向用语是用来说明并非用来限制本发明的保护范围。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings. Therefore, the directional terms used are for illustration and not for limiting the protection scope of the present invention.

本发明抑制多注速调管双间隙耦合腔2π模振荡的装置,能够有效地抑制多注速调管双间隙耦合腔输出电路中具有2π模场形分布的两个非工作模式的振荡,消除由该类振荡引起的多注速调管的不稳定性,同时降低杂谱电平。The device for suppressing the 2π-mode oscillation of the multi-beam klystron double-gap coupling cavity of the present invention can effectively suppress the oscillation of two non-working modes with 2π-mode field shape distribution in the output circuit of the multi-beam klystron double-gap coupling cavity, eliminating The instability of the multi-beam klystron caused by such oscillations reduces the spurious level at the same time.

在本发明的一个示例性实施例中,提供了一种抑制多注速调管双间隙耦合腔2π模振荡的吸收腔装置的剖面示意图。图1为根据本发明实施例抑制多注速调管双间隙耦合腔2π模振荡的装置的剖面示意图。In an exemplary embodiment of the present invention, a schematic cross-sectional view of an absorbing cavity device for suppressing 2π-mode oscillation of a multi-shot klystron double-gap coupled cavity is provided. FIG. 1 is a schematic cross-sectional view of a device for suppressing 2π-mode oscillation of a multi-beam klystron double-gap coupling cavity according to an embodiment of the present invention.

如图1所示,本实施例吸收腔装置100包括:双调谐吸收腔110,为中空的矩形谐振腔;矩形耦合波导120,连接于双调谐吸收腔110和多注速调管双间隙耦合腔200之间,正对所述多注速调管双间隙耦合腔200一侧的耦合槽,用于双调谐吸收腔110和多注速调管双间隙耦合腔之间的模式耦合。其中,双调谐吸收腔110同时谐振于TM110模式和TM210模式。As shown in Figure 1, the absorption cavity device 100 of this embodiment includes: a double-tuned absorption cavity 110, which is a hollow rectangular resonant cavity; a rectangular coupling waveguide 120, connected to the double-tuned absorption cavity 110 and the multi-beam klystron double-gap coupling cavity 200, facing the coupling slot on the side of the multi-jet klystron double-gap coupling cavity 200, is used for the mode coupling between the double-tuned absorbing cavity 110 and the multi-jet klystron double-gap coupling cavity. Wherein, the double-tuned absorber 110 resonates in the TM 110 mode and the TM 210 mode simultaneously.

本实施例中,双调谐吸收腔110同时谐振在TM110模式和TM210模式,可以有效地抑制多注速调管双间隙耦合腔200中具有2π模场形分布的两个非工作模式的振荡,消除由该类振荡引起的多注速调管的不稳定性,同时降低杂谱电平。In this embodiment, the double-tuned absorber 110 resonates in the TM 110 mode and the TM 210 mode at the same time, which can effectively suppress the oscillation of the two non-operating modes with 2π mode field distribution in the multi-beam klystron double-gap coupling cavity 200 , to eliminate the instability of the multi-beam klystron caused by this type of oscillation, and reduce the noise level at the same time.

以下对本实施例吸收腔装置100以及双间隙耦合腔200的各个组成部分进行详细说明。Each component of the absorber device 100 and the double-gap coupling cavity 200 of this embodiment will be described in detail below.

请参照图1,双调谐吸收腔110包括:腔体111和腔盖112。该腔体111和腔盖111共同构成中空的矩形谐振腔。Please refer to FIG. 1 , the double-tuned absorption chamber 110 includes: a chamber body 111 and a chamber cover 112 . The cavity body 111 and the cavity cover 111 together form a hollow rectangular resonant cavity.

需要说明的是,该矩形谐振腔的尺寸与多注速调管双间隙耦合腔需要吸收两个非工作模式的频率有关。本领域技术人员可以根据工作的频率的不同,来设计该矩形谐振腔的长宽高参数,此处不再说明。It should be noted that the size of the rectangular resonant cavity is related to the frequency that the multi-beam klystron double-gap coupling cavity needs to absorb two non-working modes. Those skilled in the art can design the length, width and height parameters of the rectangular resonant cavity according to different operating frequencies, which will not be described here again.

在双调谐吸收腔的腔盖111和双调谐吸收腔的腔体112的封闭端和靠近封闭端一侧的四周表面的腔壁上涂覆烧结微波衰减材料113。微波衰减材料113为FeSiAl衰减材料。当然本发明也可以采用其他类型的衰减材料,只要其满足相对介电常数δ、损耗正切△满足:20≤δ≤25,0.6≤△≤0.8即可。沿双调谐吸收腔长边涂覆微波衰减材料的长度Ls与双调谐吸收腔长边的长度L之比满足:0.6≤Ls/L≤0.8。A sintered microwave attenuating material 113 is coated on the closed end of the cavity cover 111 of the double-tuned absorbing cavity and the cavity body 112 of the double-tuned absorbing cavity and the cavity wall on the surrounding surface near the closed end. The microwave attenuating material 113 is FeSiAl attenuating material. Of course, other types of attenuating materials can also be used in the present invention, as long as they satisfy relative permittivity δ and loss tangent Δ: 20≤δ≤25, 0.6≤Δ≤0.8. The ratio of the length Ls of the microwave attenuating material coated along the long side of the double-tuned absorbing cavity to the length L of the long side of the double-tuned absorbing cavity satisfies: 0.6≤L s /L≤0.8.

需要说明的是,涂覆烧结微波衰减材料113的面积越大越好,但是为了避免双调谐吸收腔110和双间隙耦合腔200之间耦合口位置的微波衰减材料影响主模,本实施例中,只对双调谐吸收腔110的部分位置涂覆了微波衰减材料113。此外本领域技术人员应当清楚,只要该双调谐吸收腔110的部分面积涂覆该微波衰减材料即可,而不必非要严格满足本实施例中提及的区域和面积。It should be noted that the larger the area coated with the sintered microwave attenuating material 113, the better, but in order to prevent the microwave attenuating material at the coupling port between the double-tuned absorbing cavity 110 and the double-gap coupling cavity 200 from affecting the main mode, in this embodiment, The microwave attenuating material 113 is only coated on part of the double tuned absorbing cavity 110 . In addition, it should be clear to those skilled in the art that as long as part of the area of the double-tuned absorbing cavity 110 is coated with the microwave attenuating material, it does not have to strictly meet the area and area mentioned in this embodiment.

图2A为本实施例吸收腔装置与多注速调管双间隙耦合腔装配后的纵向剖视图。图2B为图1所示吸收腔装置与多注速调管双间隙耦合腔装配后的横向剖视图。以下结合图2A和图2B来介绍耦合波导120的形状和构造。Fig. 2A is a longitudinal sectional view of the absorption chamber device of this embodiment and the multi-beam klystron double-gap coupling chamber assembled. Fig. 2B is a transverse cross-sectional view of the absorbing chamber device shown in Fig. 1 assembled with the multi-beam klystron double-gap coupling chamber. The shape and structure of the coupling waveguide 120 will be described below with reference to FIG. 2A and FIG. 2B .

如图2A和图2B所示,多注速调管双间隙耦合腔200的右侧与耦合槽对应的位置开有第二矩形波导孔122,该第二矩形波导孔122沿朝向多注速调管双间隙耦合腔200的外侧方向,宽边的宽度逐渐增大。该第二矩形波导孔122构成矩形耦合波导120的左侧矩形波导部分。As shown in Figure 2A and Figure 2B, a second rectangular waveguide hole 122 is opened on the right side of the multi-beam klystron double-gap coupling cavity 200 corresponding to the coupling groove. In the outer direction of the tube double-gap coupling cavity 200, the width of the wide side gradually increases. The second rectangular waveguide hole 122 constitutes the left rectangular waveguide portion of the rectangular coupling waveguide 120 .

如图2A和图2B所示,双调谐吸收腔110的右侧封闭,左侧正对第二矩形波导孔122的位置开有第一矩形波导孔121。该第一矩形波导孔121宽边的宽度值W不变,等于第二矩形波导孔最宽处宽边的宽度值,该宽度值W满足与多注速调管双间隙耦合腔200工作波长λ0的比值W/λ0应小于0.4。As shown in FIG. 2A and FIG. 2B , the right side of the double-tuned absorbing cavity 110 is closed, and a first rectangular waveguide hole 121 is opened at a position opposite to the second rectangular waveguide hole 122 on the left side. The width value W of the wide side of the first rectangular waveguide hole 121 is constant, which is equal to the width value of the wide side at the widest point of the second rectangular waveguide hole, and the width value W satisfies the working wavelength λ The ratio W/λ 0 of 0 should be less than 0.4.

在将本实施例吸收腔装置100和多注速调管双间隙耦合腔200装配之后,第一矩形波导孔121和第二矩形波导孔122对准,其外围部分密封配合,构成的矩形耦合波导120。After assembling the absorption cavity device 100 of this embodiment and the multi-beam klystron double-gap coupling cavity 200, the first rectangular waveguide hole 121 and the second rectangular waveguide hole 122 are aligned, and their peripheral parts are hermetically fitted to form a rectangular coupling waveguide. 120.

本实施例中,基于所要求的耦合度参数,多注速调管双间隙耦合腔右侧第二矩形波导孔122宽边的宽度朝向外侧宽度逐渐增大。本领域技术人员应当了解,该矩形波导孔的尺寸与耦合度有关,宽度越大,耦合度越大,而考虑到整个多注速调管的尺寸要求,该宽度只能做到有限范围内尽可能大。而要求宽度W与多注速调管双间隙耦合腔200工作波长λ0的比值W/λ0应小于0.4,则是避免将其他模式耦合出双间隙耦合腔。In this embodiment, based on the required coupling degree parameter, the width of the wide side of the second rectangular waveguide hole 122 on the right side of the multi-beam klystron double-gap coupling cavity gradually increases toward the outside. Those skilled in the art should understand that the size of the rectangular waveguide hole is related to the degree of coupling, the larger the width, the greater the degree of coupling, and considering the size requirements of the entire multi-beam klystron, the width can only be achieved within a limited range. May be large. It is required that the ratio W/λ 0 of the width W to the operating wavelength λ 0 of the multi-beam klystron double-gap coupling cavity 200 should be less than 0.4, which is to avoid coupling other modes out of the double-gap coupling cavity.

此外,第一矩形波导孔121和第二矩形波导孔122的高度d始终保持不变,该高度d与多注速调管双间隙耦合腔200的耦合槽的高度dc的比值d/dc介于0.5~0.65之间。In addition, the height d of the first rectangular waveguide hole 121 and the second rectangular waveguide hole 122 is always kept constant, and the ratio of the height d to the height dc of the coupling groove of the multi-beam klystron double-gap coupling cavity 200 is d /dc between 0.5 and 0.65.

在双调谐吸收腔腔盖112上开有两个螺孔,通过该两个螺孔,分别向双调谐吸收腔内插入第一调谐螺钉114和第二调谐螺钉115。Two screw holes are opened on the cover 112 of the double tuning absorption cavity, through which the first tuning screw 114 and the second tuning screw 115 are respectively inserted into the double tuning absorption cavity.

第一调谐螺钉114和第二调谐螺钉115均位于双调谐吸收腔宽边(垂直双调谐吸收腔轴线方向)的中心,两者在水平面的投影,落在穿过上述第一矩形波导孔121中心的水平线上。Both the first tuning screw 114 and the second tuning screw 115 are located at the center of the broadside of the double tuning absorption cavity (vertical to the axial direction of the double tuning absorption cavity), and the projections of the two on the horizontal plane fall through the center of the first rectangular waveguide hole 121 on the horizontal line.

对于第一调谐螺钉114来讲,其位于双调谐吸收腔长边(平行于双调谐吸收腔轴线方向)的中心附近,本实施例中,第一调谐螺钉114与所述双调谐吸收腔未封闭端的距离L1、直径D1满足:0.28L≤D1≤0.36L,0.4L≤L1≤0.45L,其中,L为矩形谐振腔长边的长度。For the first tuning screw 114, it is located near the center of the long side of the double tuning absorption cavity (parallel to the axis direction of the double tuning absorption cavity). In this embodiment, the first tuning screw 114 and the double tuning absorption cavity are not closed The distance L 1 and the diameter D 1 of the end satisfy: 0.28L≤D 1 ≤0.36L, 0.4L≤L 1 ≤0.45L, where L is the length of the long side of the rectangular resonant cavity.

该第一调谐螺钉114通过电容调谐来微调双调谐吸收腔110内TM110模式的谐振频率,使其与双间隙耦合腔200中具有2π模场形分布非工作模式TM010模谐振。The first tuning screw 114 fine-tunes the resonant frequency of the TM 110 mode in the double-tuned absorbing cavity 110 through capacitance tuning, so that it resonates with the non-operating mode TM 010 mode in the double-gap coupling cavity 200 with a 2π mode field distribution.

对于第二调谐螺钉115来讲,其位于双调谐吸收腔长边的3/4处附近,本实施例中,第二调谐螺钉115与双调谐吸收腔110未封闭端的距离L2,直径D2满足:0.16L≤D2≤0.24L,0.7L≤L2≤0.75L。For the second tuning screw 115, it is located near 3/4 of the long side of the double tuning absorption cavity. In this embodiment, the distance L 2 between the second tuning screw 115 and the unclosed end of the double tuning absorption cavity 110 is the diameter D 2 Satisfy: 0.16L≤D 2 ≤0.24L, 0.7L≤L 2 ≤0.75L.

第二调谐螺钉115通过电容调谐来微调双调谐吸收腔TM210模式的谐振频率,使其与双间隙耦合腔中具有2π模场形分布非工作模式TM110模谐振。The second tuning screw 115 fine-tunes the resonant frequency of the double-tuned absorbing cavity TM 210 mode through capacitance tuning, so that it resonates with the non-operating mode TM 110 mode with 2π mode field distribution in the double-gap coupling cavity.

需要说明的是,该两调谐螺钉114和115进入双调谐吸收腔内的深度是在后期调试过程中确定的,并没有具体的范围。只要其调试后最终实现该双调谐吸收腔同时谐振于TM110模式和TM210模式就可以。在调试完成之后,该第一调谐螺钉和第二调谐螺钉焊接于双调谐吸收腔110上,插入其中的深度保持不变。It should be noted that the depth of the two tuning screws 114 and 115 entering into the double tuning absorption cavity is determined during the later stage of debugging, and there is no specific range. As long as the double-tuned absorbing cavity resonates in both the TM 110 mode and the TM 210 mode at the same time after debugging. After the debugging is completed, the first tuning screw and the second tuning screw are welded to the double tuning absorbing cavity 110 , and the depth inserted therein remains unchanged.

请参照图2A和图2B,多注速调管双间隙输出腔200包括:腔体210,上腔盖220,下腔盖230,三者共同围成封闭一输出腔。该输出腔被耦合膜片240分割为上下结构的双间隙输出腔。Please refer to FIG. 2A and FIG. 2B , the multi-injection klystron double-gap output chamber 200 includes: a chamber body 210 , an upper chamber cover 220 , and a lower chamber cover 230 , and the three jointly enclose an output chamber. The output cavity is divided into a double-gap output cavity with an upper and lower structure by the coupling diaphragm 240 .

在耦合膜片240的径向外围设置左右对称的两弧形耦合槽(241和242)。其中,右侧的弧形耦合槽241对准第二矩形波导孔122。该第二矩形波导孔122与双调谐吸收腔左侧的第一矩形波导孔121对齐。左侧弧形耦合槽242的位置设置耦合环243,该双间隙耦合腔工作模式的功率通过该耦合环243并经由该耦合环外围的输出矩形波导244向外输出。Two left-right symmetrical arc-shaped coupling grooves (241 and 242) are arranged on the radial periphery of the coupling diaphragm 240. Wherein, the arc-shaped coupling groove 241 on the right is aligned with the second rectangular waveguide hole 122 . The second rectangular waveguide hole 122 is aligned with the first rectangular waveguide hole 121 on the left side of the double-tuned absorbing cavity. A coupling ring 243 is provided at the position of the left arc-shaped coupling slot 242 , and the power of the double-gap coupling cavity working mode passes through the coupling ring 243 and is output through the output rectangular waveguide 244 around the coupling ring.

此外,为了装配的需要,在双间隙耦合腔朝向调谐吸收腔的一侧设置定位台阶211,在装配时,该双调谐吸收腔被卡入该定位台阶211内,以利于两矩形波导孔121和122的定位和对准。In addition, in order to meet the needs of assembly, a positioning step 211 is provided on the side of the double-gap coupling cavity facing the tuning absorbing cavity. 122 positioning and alignment.

本实施例中,双调谐吸收腔110、调谐螺钉114和115的材料均为无氧铜。以下介绍本实施例吸收腔装置的装配过程:首先,在腔体111、腔盖112的相关部位涂覆烧结微波衰减材料;而后,将腔体111和腔盖112焊接在一起,构成双调谐吸收腔110;再后,将双调谐吸收腔110卡入多注速调管双间隙耦合腔200右侧的定位台阶211上,第一矩形波导孔121和第二矩形波导孔122对齐,将两者进行焊接。In this embodiment, the materials of the double tuning absorption cavity 110 and the tuning screws 114 and 115 are all oxygen-free copper. The assembly process of the absorption cavity device of this embodiment is introduced as follows: first, sintered microwave attenuating materials are coated on the relevant parts of the cavity body 111 and the cavity cover 112; Cavity 110; after that, snap the double-tuning absorbing cavity 110 into the positioning step 211 on the right side of the multi-beam klystron double-gap coupling cavity 200, align the first rectangular waveguide hole 121 with the second rectangular waveguide hole 122, and align the two Do the welding.

至此,本实施例抑制多注速调管双间隙耦合腔2π模振荡的吸收腔装置介绍完毕。So far, the introduction of the absorption cavity device for suppressing the 2π-mode oscillation of the multi-beam klystron double-gap coupling cavity in this embodiment is completed.

在本发明的另一个示例性实施例中,还提供了一种上述吸收腔装置的调试方法,该调试方法包括:变换第一调谐螺钉114和第二调谐螺钉115插入双调谐吸收腔110内的深度,寻找使双调谐吸收腔同时谐振在TM110模式和TM210模式的位置,找到之后,将第一调谐螺钉114和第二调谐螺钉115焊接在腔体111上。In another exemplary embodiment of the present invention, a debugging method for the above-mentioned absorbing cavity device is also provided, the debugging method includes: changing the first tuning screw 114 and the second tuning screw 115 inserted into the double tuning absorbing cavity 110 depth, find the position where the double-tuned absorbing cavity resonates simultaneously in the TM 110 mode and the TM 210 mode, and after finding the position, weld the first tuning screw 114 and the second tuning screw 115 on the cavity 111 .

至此,本实施例抑制多注速调管双间隙耦合腔2π模振荡的吸收腔装置的调试方法介绍完毕So far, the introduction of the debugging method of the absorption cavity device for suppressing the 2π-mode oscillation of the multi-beam klystron double-gap coupling cavity in this embodiment is completed.

至此,已经结合附图对本发明两个实施例进行了详细描述。依据以上描述,本领域技术人员应当对本发明抑制双间隙耦合腔2π模振荡的吸收腔装置及其调试方法有了清楚的认识。So far, two embodiments of the present invention have been described in detail with reference to the accompanying drawings. Based on the above description, those skilled in the art should have a clear understanding of the absorption cavity device for suppressing 2π-mode oscillation of the double-gap coupling cavity and its debugging method of the present invention.

此外,上述对各元件和方法的定义并不仅限于实施例中提到的各种具体结构、形状或方式,本领域普通技术人员可对其进行简单地更改或替换,例如:(1)上述实施例以多注速调管双间隙耦合腔为例进行说明,本发明对于其他类型的双间隙耦合腔同样适用,本领域技术人员应当清楚,此处不再赘述。In addition, the above-mentioned definitions of each element and method are not limited to the various specific structures, shapes or methods mentioned in the embodiments, and those of ordinary skill in the art can easily modify or replace them, for example: (1) the above-mentioned implementation For example, a multi-beam klystron double-gap coupling cavity is used as an example for illustration. The present invention is also applicable to other types of double-gap coupling cavity, which should be clear to those skilled in the art, and will not be repeated here.

综上所述,本发明通过选择吸收腔的形状和尺寸、涂覆材料参数,并调节调谐螺钉的直径、所在位置和插入双调谐吸收腔内的深度,使双调谐吸收腔同时谐振在TM110模式和TM210模式的位置和尺寸,可以有效地抑制多注速调管双间隙耦合腔输出电路中具有2π模场形分布的两个非工作模式的振荡,消除由该类振荡引起的多注速调管的不稳定性,同时降低杂谱电平,同时对具有π模场形分布的工作模式的加载很小。In summary, the present invention makes the dual tuning absorption cavity simultaneously resonate in TM 110 by selecting the shape and size of the absorption cavity, coating material parameters, and adjusting the diameter, location and insertion depth of the tuning screw into the double tuning absorption cavity mode and TM 210 mode can effectively suppress the oscillation of two non-operating modes with 2π mode field shape distribution in the multi-beam klystron double-gap coupling cavity output circuit, and eliminate the multi-beam caused by such oscillation Klystron instability, while reducing the level of spurious spectrum, and at the same time loading the operating mode with π-mode field shape distribution is very small.

以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (9)

1. the absorbing cavity device suppressing gap coupled cavity 2 pi-mode oscillation, it is characterised in that including:
Double tunning absorbing cavity (110), closes resonator cavity for hollow, rectangular, and its first end seal is closed, at least part of face of cavity wall inside it Long-pending have microwave attenuating material;
Rectangle coupled waveguide (120), is connected to the second end of described double tunning absorbing cavity (110) and described gap coupled cavity (200), between, the just coupling slot to described gap coupled cavity (200) side, for described double tunning absorbing cavity (110) and double Mode Coupling between gap coupled cavity (200);
Wherein, described double tunning absorbing cavity (110) two screws opened above, by these two screws, respectively to described double tune The first tuning screw (114) and second tune screw (115), wherein, these two spiral shells is inserted vertically downward in humorous absorbing cavity (110) Hole is respectively positioned on the center of described double tunning absorbing cavity (110) broadside, makes this double tunning absorbing cavity (110) resonance simultaneously in TM110Mould Formula and TM210Pattern;
Wherein, the diameter D of described first tuning screw (114)1, with distance L of described double tunning absorbing cavity (100) second end1Full Foot: 0.28L≤D1≤ 0.36L, 0.4L≤L1≤0.45L;The diameter D of described second tune screw (115)2, with described double tunning Distance L of absorbing cavity (100) second end2Meet: 0.16L≤D2≤ 0.24L, 0.7L≤L2≤0.75L;L is that described double tunning is inhaled Receive the length on long limit, chamber.
Absorbing cavity device the most according to claim 1, it is characterised in that the first end of described double tunning absorbing cavity (110) With microwave attenuating material described in the cavity wall coating sintering near the first side surrounding.
Absorbing cavity device the most according to claim 2, it is characterised in that the relative dielectric constant of described microwave attenuating material δ, loss tangent △ meet: 20≤δ≤25,0.6≤△≤0.8.
Absorbing cavity device the most according to claim 3, it is characterised in that described microwave attenuating material is FeSiAl material.
Absorbing cavity device the most according to claim 3, it is characterised in that the coated length of described microwave attenuation meets: 0.6 ≤Ls/L≤0.8;
Wherein, LsFor the length along described double tunning absorbing cavity long limit coating microwave attenuating material, L is described double tunning absorbing cavity The length on long limit.
Absorbing cavity device the most according to claim 1, it is characterised in that:
The second rectangular waveguide hole (122) is offered in the position that described gap coupled cavity (200) is corresponding with described coupling slot;
The second of described double tunning absorbing cavity (110) is rectified the position to described second rectangular waveguide hole (122) and offers the first square Shape waveguide aperture (121);
Described first rectangular waveguide hole (121) and the second rectangular waveguide hole (122) alignment, its periphery seals and coordinates, constitutes Described rectangle coupled waveguide (120).
Absorbing cavity device the most according to claim 6, it is characterised in that described second rectangular waveguide hole (122) along towards The lateral direction of gap coupled cavity, the width value of broadside is gradually increased;
The width value W of described first rectangular waveguide hole (111) broadside is constant, equal to described second rectangular waveguide hole the widest part broadside Width value,
Wherein, the width value W of described first rectangular waveguide hole (111) broadside meets: W/ λ0≤ 0.4, λ0Couple for described double gap The operation wavelength in chamber (200).
Absorbing cavity device the most according to any one of claim 1 to 7, it is characterised in that described gap coupled cavity is The gap coupled cavity of multiple-beam klystron.
9. the adjustment method of absorbing cavity device according to any one of a claim 1 to 7, it is characterised in that including:
Adjust that described first tuning screw (114) and second tune screw (115) insert in double tunning absorbing cavity (110) is deep Degree, finds and makes this double tunning absorbing cavity (110) resonance simultaneously at TM110Pattern and TM210The position of pattern, find this position it After, described first tuning screw (114) and second tune screw (115) are welded on described double tunning absorbing cavity (110).
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