CN104120410B - A kind of reaction chamber and plasma processing device - Google Patents
A kind of reaction chamber and plasma processing device Download PDFInfo
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- CN104120410B CN104120410B CN201310153865.7A CN201310153865A CN104120410B CN 104120410 B CN104120410 B CN 104120410B CN 201310153865 A CN201310153865 A CN 201310153865A CN 104120410 B CN104120410 B CN 104120410B
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Abstract
The present invention provides a kind of reaction chamber and plasma processing device; including electric pole plate, fixing device and protective gas source; fixing device includes the device body of the loop configuration using closure; device body is nested with the periphery wall of electric pole plate; and be fixedly connected with the roof of reaction chamber, electric pole plate is fixed on reaction chamber top；And inlet channel is formed with device body, the air inlet of inlet channel is connected with protective gas source, and gas outlet is distributed on the lower surface of the device body in reaction chamber, and is connected with the inside of reaction chamber；Protective gas source is used in technique via inlet channel to protective gas is provided in reaction chamber, so that it forms the protection gas-bearing formation for stopping byproduct of reaction around the lower surface of device body.The reaction chamber that the present invention is provided, it can decrease or even eliminate byproduct of reaction and be attached on the lower surface of device body, such that it is able to improve the cleannes of reaction chamber, and then can improve processing quality.
Description
Technical field
The invention belongs to microelectronic processing technique field, and in particular to a kind of reaction chamber and plasma processing device.
Background technology
Plasma enhanced chemical vapor deposition（Plasma Enhanced Chemical Vapor Deposition, with
Lower abbreviation PECVD）Technology is a kind of method for being widely used in depositing high-quality film, and the method places the substrate in vacuum
Between interval setting in reaction chamber and two battery lead plates being parallel to each other, one of battery lead plate in two battery lead plates with
Radio-frequency power supply is connected, other in which electrode plate earthing, and, process gas is passed through between two battery lead plates, in radio frequency electrical
After source is opened, process gas is excited and plasma is formed between two battery lead plates, and plasma can occur with substrate
Reaction, so as in the film needed for substrate surface formation process.
Fig. 1 is a kind of existing PECVD device.Fig. 1 is referred to, it includes reaction chamber 10, set in reaction chamber 10
The pedestal 11 of ground connection is equipped with, it is as bottom electrode plate and is used to carry multiple substrates 12；Top in reaction chamber 10 is set
There is the electric pole plate 13 with the spaced and parallel setting of pedestal 11, it is electrically connected with the radio-frequency power supply 14 being arranged on outside reaction chamber 10,
It is used to excite the process gas between pedestal 11 and electric pole plate 13 to form plasma 21, and electric pole plate 13 is filled by fixed
Put 15 to be fixedly connected with the roof 16 of reaction chamber 10, specifically, fixing device 15 is existed using the loop configuration for closing, and set system
On the periphery wall of electric pole plate 13, and it is fixedly connected with the roof 16 of reaction chamber 10；Also, in electric pole plate 13 and pedestal 11
Between be provided with homogenizing plate 17, homogenizing plate 17 forms uniform flow chamber 18 with electric pole plate 13, and is uniformly distributed on homogenizing plate 17
There are multiple gas outlets 19, be used to connect uniform flow chamber 18 with reaction chamber 10；And, reaction chamber 10 also includes central air induction
Mouth 20, its lower end sequentially passes through roof 16 and electric pole plate 13, and is connected with uniform flow chamber 18, when technique is carried out, technique
Gas flows into uniform flow chamber 18 via central air induction mouthful 20, then is flowed into reaction chamber 10 via multiple gas outlets 19.
In actual applications, when using above-mentioned PECVD device, the byproduct of reaction produced in reaction chamber 10 can be anti-
The part of the lower surface of chamber inner wall, the lower surface of even flow plate 17 and fixing device 15 of chamber 10 etc. is answered to deposit, these are anti-
Answering accessory substance can drop pollution particle after certain thickness is accumulated, and cause substrate 12 to be contaminated, so as to reduce product matter
Amount.Therefore, being accomplished by carrying out a cleaning after the thin film deposition processes for completing pre-determined number, it is deposited on instead with removing
Answer the byproduct of reaction of the member outer surface in chamber 10.At present, cleaning generally uses remote plasma method, i.e.
The outside of reaction chamber 10 excites purge gas to form plasma, then it is delivered into reaction chamber via central air induction mouthful 20
In room 10.
However, above-mentioned PECVD device is inevitably present problems with, i.e.,：During cleaning is carried out, it is
Ensure that deposition film on the substrate 12 is uniform, generally make the area of the lower surface of electric pole plate 13 more than pedestal 11 upper surface
Area, this can cause that the lower surface of the fixing device 15 in reaction chamber 10 is formed at electric pole plate 13 and pedestal
Outside electric field between 11, and, the plasma being transported in reaction chamber 10 is difficult because not influenceed by the electric field
Reach near the lower surface of fixing device 15, so that the byproduct of reaction 22 being deposited on the lower surface cannot be cleaned,
And then cause after cleaning is completed, the cleannes of reaction chamber 10 are still very poor, so as to reduce processing quality.
The content of the invention
Present invention seek to address that technical problem present in prior art, there is provided a kind of reaction chamber and plasma add
Construction equipment, its can reduce in addition avoid byproduct of reaction be attached to fixing device on the surface in reaction chamber,
Such that it is able to improve the cleannes of reaction chamber, and then processing quality can be improved.
The present invention provides a kind of reaction chamber, including electric pole plate and fixing device, and the fixing device includes device sheet
Body, described device body is nested with the periphery wall of the electric pole plate using the loop configuration for closing, and described device
Body is fixedly connected with the roof of the reaction chamber, and the electric pole plate is fixed on into the top in the reaction chamber,
Characterized in that, the reaction chamber also includes protective gas source, and inlet channel is formed with described device body, institute
The air inlet for stating inlet channel is connected with the protective gas source, and the gas outlet of the inlet channel is distributed in exposed to described anti-
Answer on the lower surface of the device body in chamber, and connected with the inside of the reaction chamber；The protective gas source is used for
Via the inlet channel to protective gas is provided in the reaction chamber during technique, so that its following table in described device body
The protection gas-bearing formation for stopping byproduct of reaction is formed around face.
Wherein, the gas outlet is evenly distributed on the lower surface of described device body.
Wherein, the distribution density of the gas outlet is less than 1/cubic centimetre.
Preferably, the distribution density of the gas outlet is 0.2/cubic centimetre.
Wherein, the diameter of each gas outlet is less than 5mm.
Preferably, a diameter of 1mm of each gas outlet.
Wherein, the fixing device also includes two ring baffles, and the upper end of described two ring baffles is each attached to institute
State on the lower surface of device body, and be located at inner edge and the outer rim of the lower surface of described device body respectively, be used to stop from institute
State the protective gas lateral flow of gas outlet outflow.
Wherein, the fixing device also includes screen pack, and the screen pack is arranged on the lower section of described device body, and position
Between two ring baffles, and the lower surface of the screen pack, two ring baffles and device body forms closing
Space.
Wherein, the fixing device also includes multiple fixed columns, and the upper end of each fixed column is fixed on described device
On the lower surface of body, and at position between two ring baffles, the lower end of each fixed column with it is described
Screen pack is fixedly connected；The multiple fixed column is provided at circumferentially spaced along described device body.
Wherein, the fixing device also includes uniform flow part, and the upper surface of the uniform flow part is stacked in described device body
On lower surface, and recess is formed with the upper surface of the uniform flow part, the lower surface of the recess and described device body
Uniform flow space is formed, and all gas outlets connect with the uniform flow space；And set on the bottom surface of the recess
There are multiple through holes through its thickness.
Wherein, the uniform flow part is fixedly connected by the way of threaded connection or welding with described device body.
Wherein, multiple through holes are uniformly distributed relative to the bottom surface of the recess.
Wherein, the distribution density of the through hole is less than 1/cubic centimetre.
Preferably, the distribution density of the through hole is 0.2/cubic centimetre.
Wherein, the diameter of each through hole is less than 5mm.
Preferably, a diameter of 1mm of each through hole.
Wherein, the fixing device also includes two ring baffles, and the upper end of described two ring baffles is each attached to institute
State on the lower surface of uniform flow part, and be located at inner edge and the outer rim of the lower surface of the uniform flow part respectively, be used to stop and lead to from described
The protective gas lateral flow of hole outflow.
Wherein, the fixing device also includes screen pack, and the screen pack is arranged on the lower section of the uniform flow part, and is located at
Between two ring baffles, and the lower surface of the screen pack, two ring baffles and uniform flow part forms the sky closed
Between.
Wherein, the fixing device also includes multiple fixed columns, and the upper end of each fixed column is fixed on the uniform flow
On the lower surface of part, and at position between two ring baffles, the lower end of each fixed column and the mistake
Filter screen is fixedly connected；The multiple fixed column is provided at circumferentially spaced along the uniform flow part.
Wherein, the screen pack is using the filter structure more than 50 mesh.
Preferably, the screen pack uses the filter structure of 100 mesh.
Wherein, the lower end of the screen pack and fixed column each described company of fixation by the way of being threadedly coupled or welding
Connect.
Wherein, described device body is fixed with the roof of the reaction chamber by the way of threaded connection or welding and connected
Connect.
The present invention also provides a kind of plasma processing device, including reaction chamber, and the reaction chamber is using the present invention
The described reaction chamber for providing.
The present invention has following beneficial effects：
The present invention provide reaction chamber, its by by protective gas source via the shape in the device body of fixing device
Into inlet channel to providing protective gas in reaction chamber, and be distributed in exposed to anti-by making the gas outlet of the inlet channel
Answer on the lower surface of the device body in chamber, protective gas can be made to be formed around the lower surface and stop byproduct of reaction
Protection gas-bearing formation, is attached on the lower surface of device body, such that it is able to decrease or even eliminate byproduct of reaction such that it is able to improve
The cleannes of reaction chamber, and then processing quality can be improved.
The plasma processing device that the present invention is provided, it is passed through the reaction chamber provided using the present invention, can improved
The cleannes of reaction chamber, and then processing quality can be improved.
Brief description of the drawings
Fig. 1 is a kind of existing PECVD device；
The sectional view of the reaction chamber that Fig. 2 is provided for first embodiment of the invention；
Fig. 3 is the fixing device of reaction chamber in Fig. 2 along the top view of A-A ' lines；
Fig. 4 is the longitudinal section view of the fixing device of reaction chamber in Fig. 2；
Fig. 5 is the sectional view in Fig. 4 along B-B ' lines；
The sectional view of the reaction chamber that Fig. 6 is provided for second embodiment of the invention；And
Fig. 7 is the longitudinal section view of the fixing device of reaction chamber in Fig. 6.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
The reaction chamber and plasma processing device of confession are described in detail.
The sectional view of the reaction chamber that Fig. 2 is provided for first embodiment of the invention.Fig. 3 is the fixation of reaction chamber in Fig. 2
Device along A-A ' lines top view.Fig. 4 is the longitudinal section view of the fixing device of reaction chamber in Fig. 2.Also referring to Fig. 2,
Fig. 3 and Fig. 4, reaction chamber 100 includes electric pole plate 101, fixing device 102 and protective gas source.Wherein, fixing device 102
Including device body 112, device body 112 is nested with the periphery wall of electric pole plate 101 using the loop configuration for closing,
As shown in figure 3, and device body 112 be fixedly connected with the roof 110 of reaction chamber 100, electric pole plate 101 is fixed on
Top in reaction chamber 100, in the present embodiment, device body 112 is by screw 107 and the roof 110 of reaction chamber 100
Threaded connection, certainly, in actual applications, device body 112 can also be using welding etc. with the roof 110 of reaction chamber 100
Other any-modes be fixedly connected.
And, inlet channel 122, air inlet 122a and the protection gas of inlet channel 122 are formed with device body 112
Body source is connected, and gas outlet 122b is distributed on the lower surface of the device body 112 in reaction chamber 100, and with reaction
The inside connection of chamber 100；Protective gas source is used to be carried to the inside of reaction chamber 100 via inlet channel 122 in technique
For protective gas.In actual applications, protective gas can be not reacted with process gas for nitrogen, argon gas etc.
Gas, influence will not be produced with the protective gas ensured in reaction chamber 100 on technical process.Additionally, in order to further make guarantor
Shield gas does not produce influence to technical process, can make the flow of protective gas less than the flow of process gas, it is preferable that protection
The flow of gas can be the 1/20~1/10 of the flow of process gas.
During technique is carried out, protective gas source is opened in advance, so that protective gas is conveyed via inlet channel 122
To reaction chamber 100；Then, the excitation power supply 103 electrically connected with electric pole plate 101 is opened, with provocative reaction chamber 100
Process gas formed plasma 105, so as to realize carrying out the techniques such as plated film, etching to workpiece to be machined.In the process,
Because gas outlet 122b is distributed on the lower surface of device body 112, this causes the protective gas sprayed from gas outlet 122b
The protection gas-bearing formation for stopping byproduct of reaction is formed around the lower surface of device body 112, it is anti-such that it is able to decrease or even eliminate
Answer accessory substance to be attached on the lower surface of device body 112, and then the cleannes of reaction chamber 100 can be improved, improve technique
Quality.
It is readily appreciated that, in the present embodiment, it is necessary in the following table EDS maps multiple gas outlet 122b of device body 112, with
The protection gas-bearing formation that guarantee is formed at around the lower surface of device body 112 can cover the lower surface of whole device body 112.
Preferably, gas outlet 122b is uniformly distributed relative to the lower surface of device body 112, and this can make protective gas certainly
Gas outlet 122b uniformly sprays, such that it is able to form uniform protection gas-bearing formation, Jin Erke around the lower surface of device body 112
To strengthen barrier effect of the protection gas-bearing formation to byproduct of reaction.In addition, the distribution density of gas outlet 122b and each outlet
The diameter of mouth 122b can set according to condition frees such as the flow of reacting gas, the air intake structures of reacting gas, it is preferable that go out
Distribution densities of the gas port 122b on the lower surface of device body 112 is less than 1/cubic centimetre, it is further preferred that the distribution
Density is 0.2/cubic centimetre；Preferably, the diameter of each gas outlet 122b is less than 5mm, it is further preferred that each outlet
A diameter of 0.2/cubic centimetre of mouth 122b.
It should be noted that in actual applications, the quantity of inlet channel 122 can be one or more, and, each
Inlet channel 122 can have at least one gas outlet 122b.Additionally, arrangement side of the inlet channel 122 in device body 112
Formula can freely set as the case may be
In addition, in actual applications, protective gas source can be arranged on reaction chamber 100 either internally or externally, preferably
Ground, protective gas source is arranged on the outside of reaction chamber 100, to reduce the space occupancy rate of reaction chamber 100.It is arranged on reaction
Protective gas source outside chamber 100 is specially with the connected mode of the air inlet 122a of inlet channel 122：In reaction chamber
Be provided through the through hole 120 of its thickness on 100 roof 110, and through hole 120 quantity and the number of position and air inlet 122a
Amount and position correspond, also, each through hole 120 upper/lower terminal respectively with protective gas source and corresponding air inlet
122a is connected, and in technical process, the protective gas of self-shield gas source outflow is conveyed via through hole 120 and inlet channel 122
To reaction chamber 100.
In the present embodiment, fixing device 102 also includes two ring baffles 132, as shown in figure 5, in Fig. 4 along B-B '
The sectional view of line, the upper end of two ring baffles 132 is each attached on the lower surface of device body 112, and is located at device respectively
The inner edge of the lower surface of body 112 and outer rim, are used to stop the protective gas lateral flow from gas outlet 122b outflows, in other words,
By ring baffle 132, the protective gas horizontal proliferation being distributed in around the lower surface of device body 112 can be stopped, so that
The concentration of the protective gas can be improved, and then barrier effect of the protection gas-bearing formation to byproduct of reaction can be strengthened.Preferably, ring
Shape baffle plate 132 is 8~12mm in the length on the direction of the lower surface of device body 112, it is further preferred that the length
It is 10mm to spend.
It should be noted that in actual applications, the lower surface of two upper ends of ring baffle 132 and device body 112
Junction do not need good sealing, as long as ensure that the leakage rate that protective gas is leaked from the junction be allow
In the range of.
In the present embodiment, fixing device 102 also includes screen pack 142, and it can use such as stainless steel or surface
The resistant material of the aluminium alloy of anodic oxidation etc. is made, also, screen pack 142 is arranged on the lower section of device body 112, and position
Between two ring baffles 132, and the lower surface of 142, two ring baffles 132 of screen pack and device body 112 is formed
The space 104 of closing.In technical process, the protective gas sprayed from gas outlet 122b enters space 104, and by screen pack
142 flow into reaction chamber 100.By screen pack 142, can further stop that byproduct of reaction is attached to device body 112
Lower surface on, such that it is able to improve processing quality.In actual applications, screen pack 142 can be using the filter screen more than 50 mesh
Structure, it is preferable that screen pack 142 uses the filter structure of 100 mesh.
The mode that screen pack 142 is fixed on the lower section of device body 112 is specifically as follows：Fixing device 102 also includes many
Individual fixed column 152, and being provided at circumferentially spaced along device body 112, as shown in Figure 5；The upper end of each fixed column 152 is fixed on
At the lower surface of device body 112, and position between two ring baffles 132, the lower end of each fixed column 152 and mistake
Filter screen 142 can be fixedly connected by the way of threaded connection or welding, it is preferable that fixed column 152 is located at two ring baffles
The position near centre between 132, to prevent screen pack 142 from being inclined under the gas shock of protective gas.
The sectional view of the reaction chamber that Fig. 6 is provided for second embodiment of the invention.Fig. 7 is the fixation of reaction chamber in Fig. 6
The longitudinal section view of device.The reaction chamber provided also referring to Fig. 6 and Fig. 7, the present embodiment and above-mentioned first embodiment phase
Than equally including electric pole plate 101, fixing device 102 and protective gas source, because these parts or device are real above-mentioned first
To apply there has been in example and describe in detail, will not be repeated here.
Only the difference between the present embodiment and above-mentioned first embodiment is described in detail below.Specifically, originally
Compared with the technical scheme of above-mentioned first embodiment, the two only difference is that the technical scheme of embodiment：The present embodiment is carried
The fixing device 102 of the reaction chamber of confession is additionally arranged uniform flow part 106 between device body 112 and ring baffle 132, by even
Stream part 106, can improve the stability of protective gas flowing, be formed at around the lower surface of uniform flow part 106 such that it is able to improve
Protection gas-bearing formation stability.
The structure to uniform flow part 106 is described in detail below, and specifically, the upper surface of uniform flow part 106 is stacked in dress
Put on the lower surface of body 112, and uniform flow part 106 is threadedly coupled by screw 108 with device body 112, certainly, actually should
In, uniform flow part 106 can also be fixedly connected with device body 112 using other any-modes of welding etc.；And, in uniform flow
Recess 116 is formed with the upper surface of part 106, recess 116 forms uniform flow space with the lower surface of device body 112, and all
Gas outlet 122b is connected with the uniform flow space, and in other words, the uniform flow space is in the side of the lower surface parallel to device body 112
Upward size should be not less than all gas outlet 122b distribution maximum magnitude, with ensure all gas outlet 122b can with it is even
Fluid space is connected.And, multiple through holes 126 through its thickness are set on the bottom surface of recess 116, carrying out the process of technique
In, the protective gas sprayed from gas outlet 122b enters uniform flow space, and enters the inside of reaction chamber 100 via through hole 126.
It is readily appreciated that, on the lower surface of device body 112, the projection of shape and size of the upper surface of uniform flow part 106 should be with device sheets
The shape and size of the lower surface of body 112 are corresponding, to enable that the upper surface of uniform flow part 106 is stacked in device body completely
On 112 lower surface, thereby may be ensured that the lower surface of device body 112 is not exposed in reaction chamber 100.Preferably,
The scope of the depth of recess 116 is in 8~12mm, it is further preferred that the depth of recess 116 is 10mm.It is readily appreciated that, is setting up
After uniform flow part 106, the quantity of gas outlet 122b can be one or more.
Preferably, multiple through holes 126 are uniformly distributed relative to the bottom surface of recess 116, and this can make protective gas from through hole
126 uniform ejections, such that it is able to form uniform protection gas-bearing formation around the lower surface of uniform flow part 106, and then can be further
Strengthen barrier effect of the protection gas-bearing formation to byproduct of reaction.Furthermore it is preferred that the distribution density and diameter of through hole 126 can be with
Distribution density and diameter with gas outlet 122b in above-mentioned first embodiment is similar.
It is readily appreciated that, in the present embodiment, due to being additionally arranged uniform flow part between device body 112 and ring baffle 132
106, thus two ring baffles 132, screen pack 142 and fixed columns 152 should change and be fixedly connected with uniform flow part 106, due to two
The 26S Proteasome Structure and Function of ring baffle 132, screen pack 142 and fixed column 152 there has been in the above-described first embodiment to be retouched in detail
State, will not be repeated here.
In sum, the present embodiment provide reaction chamber, its by by protective gas source via in fixing device 102
Device body 112 in the inlet channel 122 that is formed to providing protective gas in reaction chamber 100, and led to by making the air inlet
The gas outlet 122b in road 122 is distributed on the lower surface of the device body 112 in reaction chamber 100, can make protection
Gas forms the protection gas-bearing formation for stopping byproduct of reaction around the lower surface, such that it is able to decrease or even eliminate byproduct of reaction
It is attached on the lower surface of device body 112, such that it is able to improve the cleannes of reaction chamber, and then technique matter can be improved
Amount.
Used as another technical scheme, the present embodiment also provides a kind of plasma processing device, including reaction chamber, instead
The reaction chamber for answering chamber to be provided using above-mentioned each embodiment.
The plasma processing device that the present embodiment is provided, it passes through the above-mentioned reaction chamber provided using the present embodiment,
The cleannes of reaction chamber can be improved, and then processing quality can be improved.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, original of the invention is not being departed from
In the case of reason and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (24)
1. a kind of reaction chamber, including electric pole plate and fixing device, the fixing device include device body, described device sheet
Body is nested with the periphery wall of the electric pole plate using the loop configuration for closing, and described device body is anti-with described
Answer the roof of chamber to be fixedly connected, the electric pole plate is fixed on the top in the reaction chamber, it is characterised in that institute
Stating reaction chamber also includes protective gas source, and inlet channel is formed with described device body, the inlet channel
Air inlet is connected with the protective gas source, and the gas outlet of the inlet channel is distributed in the dress in the reaction chamber
Put on the lower surface of body, and connected with the inside of the reaction chamber；
The protective gas source is used in technique via the inlet channel to providing protective gas in the reaction chamber, with
Make it that the protection gas-bearing formation for stopping byproduct of reaction is formed around the lower surface of described device body.
2. reaction chamber according to claim 1, it is characterised in that the gas outlet is evenly distributed on described device body
Lower surface on.
3. reaction chamber according to claim 2, it is characterised in that the distribution density of the gas outlet is less than 1/cube
Centimetre.
4. reaction chamber according to claim 3, it is characterised in that the distribution density of the gas outlet is 0.2/cube
Centimetre.
5. reaction chamber according to claim 1 and 2, it is characterised in that the diameter of each gas outlet is less than 5mm.
6. reaction chamber according to claim 5, it is characterised in that a diameter of 1mm of each gas outlet.
7. reaction chamber according to claim 1, it is characterised in that the fixing device also includes two ring baffles,
The upper end of described two ring baffles is each attached on the lower surface of described device body, and respectively positioned at described device body
The inner edge of lower surface and outer rim, are used to stop the protective gas lateral flow from gas outlet outflow.
8. reaction chamber according to claim 7, it is characterised in that the fixing device also includes screen pack, the mistake
Filter screen is arranged on the lower section of described device body, and between two ring baffles, and the screen pack, two rings
The lower surface of shape baffle plate and device body forms the space of closing.
9. reaction chamber according to claim 8, it is characterised in that the fixing device also includes multiple fixed columns, often
The upper end of the individual fixed column is fixed on the lower surface of described device body, and the position between two ring baffles
Place is put, the lower end of each fixed column is fixedly connected with the screen pack；
The multiple fixed column is provided at circumferentially spaced along described device body.
10. reaction chamber according to claim 1, it is characterised in that the fixing device also includes uniform flow part, described even
The upper surface for flowing part is stacked on the lower surface of described device body, and is formed with the upper surface of the uniform flow part recessed
Portion, the recess forms uniform flow space with the lower surface of described device body, and all gas outlets are empty with the uniform flow
Between connect；And
Multiple through holes through its thickness are provided with the bottom surface of the recess.
11. reaction chambers according to claim 10, it is characterised in that the uniform flow part uses what is be threadedly coupled or weld
Mode is fixedly connected with described device body.
12. reaction chambers according to claim 10, it is characterised in that bottom of multiple through holes relative to the recess
Face is uniformly distributed.
13. reaction chambers according to claim 12, it is characterised in that the distribution density of the through hole is less than 1/cube
Centimetre.
14. reaction chambers according to claim 13, it is characterised in that the distribution density of the through hole is 0.2/cube
Centimetre.
15. reaction chambers according to claim 12, it is characterised in that the diameter of each through hole is less than 5mm.
16. reaction chambers according to claim 15, it is characterised in that a diameter of 1mm of each through hole.
17. reaction chambers according to claim 10, it is characterised in that the fixing device also includes two annular gears
Plate, the upper end of described two ring baffles is each attached on the lower surface of the uniform flow part, and respectively positioned at the uniform flow part
The inner edge of lower surface and outer rim, are used to stop the protective gas lateral flow from through hole outflow.
18. reaction chambers according to claim 17, it is characterised in that the fixing device also includes screen pack, described
Screen pack is arranged on the lower section of the uniform flow part, and between two ring baffles, and the screen pack, two rings
The lower surface of shape baffle plate and uniform flow part forms the space of closing.
19. reaction chambers according to claim 18, it is characterised in that the fixing device also includes multiple fixed columns,
The upper end of each fixed column is fixed on the lower surface of the uniform flow part, and the position between two ring baffles
Place is put, the lower end of each fixed column is fixedly connected with the screen pack；
The multiple fixed column is provided at circumferentially spaced along the uniform flow part.
20. reaction chamber according to claim 8 or 18, it is characterised in that the screen pack is using the filter more than 50 mesh
Web frame.
21. reaction chambers according to claim 20, it is characterised in that the screen pack uses the filter structure of 100 mesh.
22. reaction chamber according to claim 9 or 19, it is characterised in that the screen pack and each described fixed column
Lower end using threaded connection or welding by the way of be fixedly connected.
23. reaction chambers according to claim 1, it is characterised in that described device body is using threaded connection or welds
Mode be fixedly connected with the roof of the reaction chamber.
A kind of 24. plasma processing devices, including reaction chamber, it is characterised in that the reaction chamber uses claim
Reaction chamber described in 1-23 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310153865.7A CN104120410B (en) | 2013-04-27 | 2013-04-27 | A kind of reaction chamber and plasma processing device |
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| CN201310153865.7A CN104120410B (en) | 2013-04-27 | 2013-04-27 | A kind of reaction chamber and plasma processing device |
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| CN104120410B true CN104120410B (en) | 2017-07-04 |
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| CN112575314B (en) * | 2020-12-11 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Epitaxial device |
| CN114171365B (en) * | 2021-12-10 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Uniform flow device, process chamber and semiconductor process equipment |
| CN115505904B (en) * | 2022-10-27 | 2023-11-24 | 拓荆科技股份有限公司 | Spray set of many air current passageway |
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| CN101925985A (en) * | 2008-01-28 | 2010-12-22 | 朗姆研究公司 | Gas modulation to control edge exclusion in bevel edge etching plasma chamber |
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| JPH09298186A (en) * | 1996-05-08 | 1997-11-18 | Sony Corp | Etching method and etching apparatus |
| JP3366301B2 (en) * | 1999-11-10 | 2003-01-14 | 日本電気株式会社 | Plasma CVD equipment |
| JP5902896B2 (en) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | Substrate processing equipment |
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| CN101925985A (en) * | 2008-01-28 | 2010-12-22 | 朗姆研究公司 | Gas modulation to control edge exclusion in bevel edge etching plasma chamber |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |