CN104112980A - Staggerly-laminated optical path module and multi-die semiconductor laser - Google Patents
Staggerly-laminated optical path module and multi-die semiconductor laser Download PDFInfo
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Abstract
The invention relates to the technical field of laser, and particularly relates to a staggerly-laminated optical path module and a multi-die semiconductor laser. The staggerly-laminated optical path module comprises a heat sink module and N optical path units, N being a positive integer larger than or equal to 2. Each optical path unit comprises a semiconductor laser chip CoS with auxiliary heat sink, a fast axis collimating lens and a slow axis collimating lens. One surface of the heat sink module is in the shape of N+1 steps, from the first step to the N+1 steps from low to high. The optical axes of output beams of the adjacent two CoSs are mutually parallel and are not in the same vertical plane. The multi-die semiconductor laser comprises a step-shaped bottom board and a plurality of staggerly-laminated optical path modules. According to the staggerly-laminated optical path modules and the multi-chip semiconductor laser, modularization of a plurality of optical paths are realized, process repeatability and stability are guaranteed, and space utilization rate of the multi-die semiconductor laser is improved.
Description
Technical field
The present invention relates to laser technology field, relate in particular to a kind of dislocation laminated type light path module and a kind of multi-die semiconductor laser.
Background technology
In current multi-die semiconductor laser; conventionally the optical elements such as auxiliary heat sink multiple bands semiconductor laser chip (CoS), multiple fast axis collimation lens and multiple slow axis collimating lenses are all integrated on same base plate in the mode of welding; and in order to increase the power of semiconductor laser; conventionally the integrated more unit component of meeting, the space that whole like this semiconductor laser takies in the horizontal direction will showed increased.Because CoS is welded on base plate, if certain breaks down, just need to again change, and base plate is to adopt the metal of high thermal conductivity to make, change in the process of CoS, can affect other unit component, need to again carry out adjustment to them, this all unit components altogether the space integration mode of base plate can not ensure the process repeatability of product and ensure different chip products between versatility, and detachability is poor, maintenance cost is high, and labor intensive is difficult to realize the mass production of multi-die semiconductor laser.
Summary of the invention
The technical problem existing for above-mentioned prior art, the invention provides a kind of dislocation laminated type light path module, the present invention also aims to provide a kind of multi-die semiconductor laser.
The invention discloses a kind of dislocation laminated type light path module, comprising: a heat sink module and N optical path unit, wherein N is more than or equal to 2 positive integer; A described N optical path unit is followed successively by the first optical path unit to the N optical path unit;
Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
It is step-like that the one side of described heat sink module is N+1 level, is followed successively by from high to low first order step to the N+1 level step;
The CoS of i optical path unit is fixed on i level step; The slow axis collimating lens of i optical path unit is fixed on i+1 level step, and wherein i is from 1 to N;
Fast axis collimation lens in each optical path unit is separately fixed at the front end of CoS in optical path unit separately, and the front end of described CoS is that one end of CoS output beam;
The optical axis of the optical axis of the output beam of the CoS in each optical path unit, the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line;
The output beam of CoS in each optical path unit is only by the slow axis collimating lens of optical path unit self;
The optical axis of the output beam of adjacent two CoS is parallel to each other, and not in same vertical plane.
Further, in the time of N=2, described dislocation laminated type light path module comprises two optical path units; Two described optical path units are respectively the first optical path unit and the second optical path unit.The one side of described heat sink module be three grades step-like, be followed successively by from high to low first order step, second level step and third level step;
The CoS of described the first optical path unit is fixed on described first order step; The slow axis collimating lens of described the first optical path unit is fixed on the step of the described second level; The CoS of described the second optical path unit is fixed on the step of the described second level; The slow axis collimating lens of described the second optical path unit is fixed on described third level step;
The optical axis of the output beam of the CoS in described the second optical path unit is parallel to the optical axis of the output beam of the CoS in described the first optical path unit, and not in same vertical plane.
Further, in described heat sink module, be provided with two counterbores, for described dislocation laminated type light path module being fixed to the step base plate of multi-die semiconductor laser.
Further, being provided with a side strip on described first order step, is first side bar;
CoS in described the first optical path unit is fixed on described first order step by described first side bar location;
On the step of the described second level, be provided with rectangular boss;
In described rectangular boss, being provided with a side strip, is second side bar;
CoS in described the second optical path unit is fixed in the rectangular boss of described second level step by described second side bar location;
Slow axis collimating lens in described the first optical path unit is arranged between described rectangular boss and third level step;
Two described counterbores, one is arranged on first order step, and another is arranged on the step of the second level.
Further, on described first order step, being provided with rectangular boss, is the first rectangular boss;
In described the first rectangular boss, being provided with a side strip, is first side bar;
CoS in described the first optical path unit is fixed in the first rectangular boss of described first order step by described first side bar location;
On the step of the described second level, being provided with rectangular boss, is the second rectangular boss;
In described the second rectangular boss, being provided with a side strip, is second side bar;
CoS in described the second optical path unit is fixed in the second rectangular boss of described second level step by described second side bar location;
Slow axis collimating lens in described the first optical path unit is arranged between described first order step and described the second rectangular boss;
Two described counterbores, one is arranged on first order step, and another is arranged on the step of the second level.
Further, described dislocation laminated type light path module also comprises one or more in Volume Bragg grating, thermistor, counnter attack sheet; Described heat sink module adopts high thermal conductivity metal to make.
The invention also discloses a kind of multi-die semiconductor laser, comprising: step base plate and multiple described dislocation laminated type light path module;
Multiple dislocation laminated type light path modules are separately fixed on the different steps of step base plate, on each step that is fixed with dislocation laminated type light path module, are provided with at least two fixing holes, for fixing dislocation laminated type light path module.
Further, described step base plate adopts high thermal conductivity metal to make, and in described step base plate, the difference in height of adjacent two steps is the first difference in height and the first width sum; Wherein:
Described the first difference in height is the difference in height of the CoS in the first optical path unit and the CoS in the second optical path unit in each dislocation laminated type light path module;
The light beam of the output beam that described the first width is CoS after fast axis collimation lens width in vertical direction.
Further, on described each step that is fixed with dislocation laminated type light path module, be provided with two fixing holes, described two fixing holes are all screwed hole; Two counterbores in each dislocation laminated type light path module are corresponding with the position of two fixing holes on each step that is fixed with dislocation laminated type light path module;
Described multiple dislocation laminated type light path module is fixed on the step of step base plate in the mode being threaded respectively.
Further, also comprise: multiple speculums, a coupling mirror and a coupled fiber;
Each dislocation laminated type light path module is corresponding with two speculums, and two speculums corresponding with each dislocation laminated type light path module are vertically fixed on respectively on the step at described corresponding dislocation laminated type light path module place successively along the direction of propagation of the output beam of CoS in corresponding dislocation laminated type light path module, and the height of two speculums increases gradually, for the output beam of the CoS of the each optical path unit in described corresponding dislocation laminated type light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line
Compared with prior art, technique effect of the present invention is:
The present invention passes through CoS, fast axis collimation lens and slow axis collimating lens are integrated in same heat sink module, and in the situation that avoiding interfering, by they in the vertical direction with horizontal direction on reasonable layout, form an independently semiconductor laser unit device, the laminated type light path that misplaces module, thereby realize the modularization of multiple light paths, take full advantage of the useful space in the vertical direction with in horizontal direction, thereby compress to greatest extent the space taking, can ensure very high process repeatability and stability debuging in process, simplify workman's operation, improving production efficiency.Compare with the Coupling device of automation, debuging of dislocation laminated type light path module possesses more flexibility, higher than automation equipment coupling efficiency, and realize the mass production of dislocation stacked layer type semiconductor laser, improve the space availability ratio of multi-die semiconductor laser, solve product component versatility problem between different Multi-core products, reduced the cost of product in development and production process.
Brief description of the drawings
Fig. 1 is the structural representation of the dislocation laminated type light path module embodiment mono-in the present invention;
Fig. 2 is the vertical view of the dislocation laminated type light path module embodiment mono-in the present invention;
Fig. 3 is the structural representation of the dislocation laminated type light path module embodiment bis-in the present invention;
Fig. 4 is the vertical view of the dislocation laminated type light path module embodiment bis-in the present invention;
Fig. 5 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention;
Fig. 6 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention;
Fig. 7 is the vertical view of the multi-die semiconductor laser in the embodiment of the present invention;
In figure: dislocation laminated type light path module 100,200; Heat sink module 101,201; The auxiliary heat sink semiconductor laser chip CoS102,202 of band; Fast axis collimation lens 103,203; Slow axis collimating lens 104,204; First order step 105,205; Second level step 106,206; Third level step 107,207; First side bar 108,208; Second side bar 109,209; Rectangular boss 110; Counterbore 112,212; Contact conductor 113,213; The second rectangular boss 210; The first rectangular boss 211; Step base plate 300; Fixing hole 301; Speculum 401; Coupling mirror 402; Coupled fiber 403.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The invention discloses a kind of dislocation laminated type light path module, comprising: a heat sink module and N optical path unit, wherein N is more than or equal to 2 positive integer; N optical path unit is followed successively by the first optical path unit to the N optical path unit; Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band; It is step-like that the one side of heat sink module is N+1 level, is followed successively by from high to low first order step to the N+1 level step; The CoS of i optical path unit is fixed on i level step; The slow axis collimating lens of i optical path unit is fixed on i+1 level step, and wherein i is from 1 to N; Fast axis collimation lens in each optical path unit is separately fixed at the front end of CoS in optical path unit separately, and the front end of CoS is that optical axis, the optical axis of fast axis collimation lens and the optical axis of slow axis collimating lens of output beam of the CoS in the each optical path unit in that one end of CoS output beam is on same straight line; The output beam of CoS in each optical path unit is only by the slow axis collimating lens of optical path unit self; The optical axis of the output beam of adjacent two CoS is parallel to each other, and not in same vertical plane; The light beam of the output beam of CoS in each optical path unit after fast axis collimation lens width in vertical direction equates.
Now, with when the N=2, a kind of dislocation laminated type light path module, comprising: the embodiment of a heat sink module and two optical path units, is described in further detail.
Dislocation laminated type light path module embodiment mono-
Fig. 1 is the structural representation of the dislocation laminated type light path module embodiment mono-in the present invention; Fig. 2 is the vertical view of the dislocation laminated type light path module embodiment mono-in the present invention.As depicted in figs. 1 and 2, the embodiment of the present invention one discloses a kind of dislocation laminated type light path module 100, comprising: a heat sink module 101 and two optical path units; Two optical path units are respectively the first optical path unit and the second optical path unit; Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS102, a fast axis collimation lens 103 and a slow axis collimating lens 104 of band.The one side of heat sink module 101 be three grades step-like, be followed successively by from high to low first order step 105, second level step 106 and third level step 107, arrange like this and can facilitate the installation of optical element and avoid producing and interfering between the light beam in different light paths unit, and be conducive to heat radiation, the width on every stage rank can be determined according to the physical dimension of each optical element and their installation sites on step, difference in height between step also will be come to determine according to specific circumstances, to guarantee not produce interference between two optical elements in optical path unit, as the output beam of the CoS in certain optical path unit can not be blocked by certain optical element.
The CoS102 of the first optical path unit is fixed on first order step 105, and the slow axis collimating lens 104 of the first optical path unit is fixed on second level step 106; The CoS102 of the second optical path unit is fixed on second level step 106, and the slow axis collimating lens 104 of the second optical path unit is fixed on third level step 107.
On first order step, 105 are provided with a side strip, are first side bar 108, and side strip is strip projection.CoS102 in the first optical path unit is fixed on first order step 105 by location, 108 of first sides; On second level step 106, being provided with rectangular boss 110, being provided with a side strip in rectangular boss 110, is second side bar 109; CoS102 in the second optical path unit is fixed in the rectangular boss 110 of second level step 106 by second side bar 109 location; Slow axis collimating lens 104 in the first optical path unit is arranged between rectangular boss 110 and third level step 107, between the slow axis collimating lens 104 in CoS102 and second optical path unit of the slow axis collimating lens 104 in the first optical path unit in the second optical path unit.
In heat sink module 101, be provided with two counterbores 112, one of them is arranged on first order step 105, and another is arranged on second level step 106, for dislocation laminated type light path module 100 being fixed to the step base plate of multi-die semiconductor laser.
Fast axis collimation lens 103 in each optical path unit is separately fixed at the front end of CoS102 in optical path unit separately, and the front end of CoS102 is that one end of CoS102 output beam; The output beam of CoS102 in each optical path unit is only by the slow axis collimating lens of optical path unit self; Fast axis collimation lens 103 in each optical path unit and slow axis collimating lens 104 are only arranged on the propagation path of output beam of the CoS102 of this optical path unit self, can be by selecting the slow axis collimating lens of suitable dimension to ensure can not block the light beam of other optical path unit.When CoS102, fast axis collimation lens 103 and slow axis collimating lens 104 are installed, can pass through micropositioning stage, make optical axis, the optical axis of fast axis collimation lens and the optical axis of slow axis collimating lens of the output beam of the CoS102 in each optical path unit on same straight line, can avoid like this differing from axle introducing optics of optical element, cause beam quality to decline, affect follow-up coupling efficiency.The optical axis of the output beam of the CoS102 in the second optical path unit is parallel to the optical axis of the output beam of the CoS102 in the first optical path unit, and not in same vertical plane, distance in CoS102 in CoS102 in the first optical path unit and the second optical path unit distance and vertical direction in the horizontal direction will ensure that the output beam of the CoS102 in the first optical path unit can not be blocked by the contact conductor 113 on the CoS102 in the second optical path unit, the present invention is by adjusting the distance staggering in difference in height in the vertical direction of two optical path units and horizontal direction, ensure that the light beam that the CoS102 in every optical path unit sends do not interfere each other, significantly reduce the height of dislocation laminated type light path module in straight horizontal direction, greatly improve space availability ratio.
Dislocation laminated type light path module embodiment bis-
Fig. 3 is the structural representation of the dislocation laminated type light path module embodiment bis-in the present invention; Fig. 4 is the vertical view of the dislocation laminated type light path module embodiment bis-in the present invention.As shown in Figure 3 and Figure 4, the embodiment of the present invention
Embodiment bis-discloses a kind of dislocation laminated type light path module 200, comprising: a heat sink module 201 and two optical path units; Two optical path units are respectively the first optical path unit and the second optical path unit.Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS202, a fast axis collimation lens 203 and a slow axis collimating lens 204 of band; The one side of heat sink module 201 be three grades step-like, be followed successively by from high to low first order step 205, second level step 206 and third level step 207, identical in the embodiment of the present invention two in the specific design principle of the effect of step and step and embodiment mono-.
The CoS202 of the first optical path unit is fixed on first order step 205; The slow axis collimating lens 204 of the first optical path unit is fixed on second level step 206; The CoS202 of the second optical path unit is fixed on second level step 206; The slow axis collimating lens 204 of the second optical path unit is fixed on third level step 207.
On first order step 205, being provided with rectangular boss, is to be provided with a side strip in the first rectangular boss 211, the first rectangular boss 211, is first side bar 208; CoS202 in the first optical path unit is fixed in the first rectangular boss 211 of first order step 205 by first side bar 208 location.
On the step of the second level, 212 are provided with rectangular boss, be to be provided with a side strip in the second rectangular boss 210, the second rectangular boss 210, and be second side bar 209; CoS202 in the second optical path unit is fixed in the second rectangular boss 210 of second level step 206 by second side bar 209 location.
Slow axis collimating lens 204 in the first optical path unit is arranged between first order step 205 and the second rectangular boss 210, between the CoS202 in CoS202 and second optical path unit of the slow axis collimating lens 204 in the first optical path unit in the first optical path unit.
In heat sink module 201, be provided with two counterbores 212, one of them is arranged on first order step 205, another is arranged on second level step 206, for described dislocation laminated type light path module 200 being fixed to the step base plate of multi-die semiconductor laser.
The fixed position of the fast axis collimation lens in each optical path unit of the embodiment of the present invention two is identical with the fixed position of fast axis collimation lens in the embodiment of the present invention one.
Identical with the embodiment of the present invention one of the concrete mounting means of CoS, fast axis collimation lens and slow axis collimating lens in the embodiment of the present invention two in each optical path unit and installation requirement.
Distance in CoS202 in CoS202 in the embodiment of the present invention two in the first optical path unit and the second optical path unit distance and vertical direction in the horizontal direction also will ensure that the output beam of the CoS202 in the first optical path unit can not be blocked by the contact conductor 213 on the CoS202 in the second optical path unit.
In the embodiment of the present invention two, in order to save the cost of slow axis collimating lens, the slow axis collimating lens 204 of the first optical path unit is also to be fixed on first order step 205.
The rectangular strip that side strip in the embodiment of the present invention one and embodiment bis-is projection, concrete size is definite according to specific circumstances, and the particular location of two counterbores also can decide according to actual conditions.Dislocation laminated type light path module in the embodiment of the present invention one and enforcement two examples also comprises one or more in Volume Bragg grating, thermistor, counnter attack sheet; Heat sink module can adopt high thermal conductivity metal to make.
In the embodiment of the present invention one and embodiment bis-, main difference is the relative position of exchanging the CoS of slow axis collimating lens in the first optical path unit and the second optical path unit, thereby converts out various structures, has improved space availability ratio.The embodiment of the present invention one and embodiment bis-can also increase the progression of step, and more optical path unit is set, make each optical path unit in the vertical direction with the interlaced distribution of horizontal direction.
Further specifically describe below the embodiment of the multi-die semiconductor laser that comprises 7 dislocation laminated type light path modules.
Multi-die semiconductor laser embodiment
Fig. 5 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention, Fig. 6 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention, and Fig. 7 is the vertical view of the multi-die semiconductor laser in the embodiment of the present invention.As shown in Fig. 5-7, the embodiment of the invention discloses a kind of multi-die semiconductor laser, comprising: 300 and 7 dislocation laminated type light path modules 100 of step base plate; 7 dislocation laminated type light path modules 100 are fixed on the different steps of step base plate 300 in the mode being threaded respectively.On each step that is fixed with dislocation laminated type light path module 100, be provided with to two fixing holes 301, for fixing dislocation laminated type light path module, two fixing holes are all screwed hole; Two counterbores 112 in each dislocation laminated type light path module are corresponding with the position of two fixing holes 301 on each step that is fixed with dislocation laminated type light path module.
In step base plate 300, the difference in height of all adjacent two steps all equates; In step base plate 300, the difference in height of adjacent two steps is the first difference in height and the first width sum; Wherein: the first difference in height is the difference in height of the CoS102 in the first optical path unit and the CoS102 in the second optical path unit in each dislocation laminated type light path module; The first width is the output beam of the CoS102 light beam after fast axis collimation lens width in vertical direction.
Multi-die semiconductor laser, also comprises: multiple speculum 401, coupling mirror 402 and a coupled fiber 403, each dislocation laminated type light path module 100 is corresponding with two speculums 401, and two speculums 401 corresponding with each dislocation laminated type light path module 100 are vertically fixed on respectively on the step at corresponding dislocation laminated type light path module 100 places successively along the direction of propagation of the output beam of CoS102 in corresponding dislocation laminated type light path module, and the height of two speculums 401 increases gradually, the reflecting surface of each speculum 401 is 45 ° with the angle that the straight line at the optical axis of fast axis collimation lens in the dislocation laminated type light path module 100 of answering in contrast and the optical axis place of slow axis collimating lens becomes, reflex to the plane of incidence of coupling mirror 402 for the output beam of CoS102 of the each optical path unit in laminated type light path module 100 that correspondence is misplaced, for ensureing that two light beams in each dislocation laminated type light path module 100 are reflected by each self-corresponding speculum 401, the height of speculum 401 will be determined according to actual conditions.
Coupled fiber 403 is positioned at a side at the exit facet place of coupling mirror 402, and the axis of the axis of coupling mirror 402 and coupled fiber 403 is located along the same line.
In order to ensure good thermal diffusivity, step base plate 300 can adopt high thermal conductivity metal to make, for example: copper.
In an alternative embodiment of the invention, the step base plate of multi-die semiconductor laser also can design the height of step and the position of fixing hole in step base plate according to the concrete size of the dislocation laminated type light path module 200 in embodiment bis-, and the multiple dislocation laminated type light path modules 200 in embodiment bis-are fixedly mounted on respectively on step, be assembled into multi-die semiconductor laser.Each dislocation laminated type light path module 200 is corresponding with two speculums.The height of two corresponding speculums and the position relationship method definite with the multi-die semiconductor laser embodiment that comprises dislocation laminated type light path module 100 is identical.
In sum, the present invention is by being integrated in CoS, fast axis collimation lens and slow axis collimating lens in same heat sink module, composition dislocation laminated type light path module, thus realize the modularization of multiple light paths, can ensure very high process repeatability and stability debuging in process.By the adjustment distance staggering in difference in height in the vertical direction and horizontal direction that misplaces in laminated type light path module between optical path unit, take full advantage of the useful space, realize the mass production of multi-chip semiconductor laser, improve the space availability ratio of multi-die semiconductor laser, solved multi-chip product component versatility problem between different multi-chip products.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any amendments of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., be all included in protection scope of the present invention.
Claims (10)
1. a dislocation laminated type light path module, is characterized in that, comprising: a heat sink module and N optical path unit, and wherein N is more than or equal to 2 positive integer; A described N optical path unit is followed successively by the first optical path unit to the N optical path unit;
Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
It is step-like that the one side of described heat sink module is N+1 level, is followed successively by from high to low first order step to the N+1 level step;
The CoS of i optical path unit is fixed on i level step; The slow axis collimating lens of i optical path unit is fixed on i+1 level step, and wherein i is from 1 to N;
Fast axis collimation lens in each optical path unit is separately fixed at the front end of CoS in optical path unit separately, and the front end of described CoS is that one end of CoS output beam;
The optical axis of the optical axis of the output beam of the CoS in each optical path unit, the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line;
The output beam of CoS in each optical path unit is only by the slow axis collimating lens of optical path unit self;
The optical axis of the output beam of adjacent two CoS is parallel to each other, and not in same vertical plane.
2. dislocation laminated type light path module according to claim 1, is characterized in that, in the time of N=2, described dislocation laminated type light path module comprises two optical path units; Two described optical path units are respectively the first optical path unit and the second optical path unit.The one side of described heat sink module be three grades step-like, be followed successively by from high to low first order step, second level step and third level step;
The CoS of described the first optical path unit is fixed on described first order step; The slow axis collimating lens of described the first optical path unit is fixed on the step of the described second level; The CoS of described the second optical path unit is fixed on the step of the described second level; The slow axis collimating lens of described the second optical path unit is fixed on described third level step;
The optical axis of the output beam of the CoS in described the second optical path unit is parallel to the optical axis of the output beam of the CoS in described the first optical path unit, and not in same vertical plane.
3. dislocation laminated type light path module according to claim 2, is characterized in that, is provided with two counterbores in described heat sink module, for described dislocation laminated type light path module being fixed to the step base plate of multi-die semiconductor laser.
4. dislocation laminated type light path module according to claim 3, is characterized in that,
On described first order step, being provided with a side strip, is first side bar;
CoS in described the first optical path unit is fixed on described first order step by described first side bar location;
On the step of the described second level, be provided with rectangular boss;
In described rectangular boss, being provided with a side strip, is second side bar;
CoS in described the second optical path unit is fixed in the rectangular boss of described second level step by described second side bar location;
Slow axis collimating lens in described the first optical path unit is arranged between described rectangular boss and third level step;
Two described counterbores, one is arranged on first order step, and another is arranged on the step of the second level.
5. dislocation laminated type light path module according to claim 3, is characterized in that,
On described first order step, being provided with rectangular boss, is the first rectangular boss;
In described the first rectangular boss, being provided with a side strip, is first side bar;
CoS in described the first optical path unit is fixed in the first rectangular boss of described first order step by described first side bar location;
On the step of the described second level, being provided with rectangular boss, is the second rectangular boss;
In described the second rectangular boss, being provided with a side strip, is second side bar;
CoS in described the second optical path unit is fixed in the second rectangular boss of described second level step by described second side bar location;
Slow axis collimating lens in described the first optical path unit is arranged between described first order step and described the second rectangular boss;
Two described counterbores, one is arranged on first order step, and another is arranged on the step of the second level.
6. according to arbitrary described dislocation laminated type light path module in claim 1-5, it is characterized in that, described dislocation laminated type light path module also comprises one or more in Volume Bragg grating, thermistor, counnter attack sheet; Described heat sink module adopts high thermal conductivity metal to make.
7. a multi-die semiconductor laser, is characterized in that, comprising: step base plate and multiple as the dislocation laminated type light path module as described in arbitrary in claim 3-5;
Multiple dislocation laminated type light path modules are separately fixed on the different steps of step base plate, on each step that is fixed with dislocation laminated type light path module, are provided with at least two fixing holes, for fixing dislocation laminated type light path module.
8. multi-die semiconductor laser according to claim 7, is characterized in that, described step base plate adopts high thermal conductivity metal to make, and in described step base plate, the difference in height of adjacent two steps is the first difference in height and the first width sum; Wherein:
Described the first difference in height is the difference in height of the CoS in the first optical path unit and the CoS in the second optical path unit in each dislocation laminated type light path module;
The light beam of the output beam that described the first width is CoS after fast axis collimation lens width in vertical direction.
9. multi-die semiconductor laser according to claim 8, is characterized in that, on described each step that is fixed with dislocation laminated type light path module, is provided with two fixing holes, and described two fixing holes are all screwed hole; Two counterbores in each dislocation laminated type light path module are corresponding with the position of two fixing holes on each step that is fixed with dislocation laminated type light path module;
Described multiple dislocation laminated type light path module is fixed on the step of step base plate in the mode being threaded respectively.
10. multi-die semiconductor laser according to claim 9, is characterized in that, also comprises: multiple speculums, a coupling mirror and a coupled fiber;
Each dislocation laminated type light path module is corresponding with two speculums, and two speculums corresponding with each dislocation laminated type light path module are vertically fixed on respectively on the step at described corresponding dislocation laminated type light path module place successively along the direction of propagation of the output beam of CoS in corresponding dislocation laminated type light path module, and the height of two speculums increases gradually, for the output beam of the CoS of the each optical path unit in described corresponding dislocation laminated type light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line.
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| CN201410328281.3A CN104112980A (en) | 2014-07-10 | 2014-07-10 | Staggerly-laminated optical path module and multi-die semiconductor laser |
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| CN111557066A (en) * | 2018-01-04 | 2020-08-18 | 株式会社藤仓 | Semiconductor laser module and method for manufacturing semiconductor laser module |
| CN112615259A (en) * | 2021-02-08 | 2021-04-06 | 深圳市星汉激光科技股份有限公司 | Novel semiconductor laser |
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