CN104112639B - A kind of realize plasma-reaction-chamber and the method thereof that reacting gas is switched fast - Google Patents
A kind of realize plasma-reaction-chamber and the method thereof that reacting gas is switched fast Download PDFInfo
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Abstract
The invention discloses and a kind of realize plasma-reaction-chamber and the method thereof that reacting gas is switched fast, by using technical scheme, the total gas flow rate making whole technical process inflow reaction chamber is identical, be conducive to controlling the pressure stability of reaction chamber, simultaneously, two groups of gases are injected simultaneously in reaction chamber above and below reaction chamber, while ensureing not affect substrate etching reaction and deposition reaction, the covert volume reducing reaction chamber, it is more beneficial for gas and is rapidly filled with reaction chamber, improve the switching rate of etch step and deposition step, and then improve the etch rate of substrate.Simultaneously as air pressure in reaction chamber is higher than the air pressure at air pump, gas flow controller need faced by less, the most accurate, the stable control reacting gas flow velocity of pressure differential, thus improve the stability of processing procedure.
Description
Technical field
The present invention relates to semiconductor chip processing technology field, particularly relate to one and carve at deep processing plasma
Erosion technology quickly realizes the technical field of reacting gas switching.
Background technology
In technical field of manufacturing semiconductors, MEMS (Micro-Electro-Mechanical Systems,
MEMS) and the field such as 3D encapsulation technology, it usually needs the materials such as silicon are carried out deep via etching.
Such as, in body silicon etching technology, the degree of depth of deep silicon through hole (Through-Silicon-Via, TSV) reaches
Hundreds of micron, its depth-to-width ratio are more than 10, generally use deep reaction ion etching method to etch body silicon and are formed.
In prior art, the deep reaction ion etching of TSV generally uses United States Patent (USP) US5501893 to propose
Bosch technique carry out.Concrete deep reaction ion etching method comprises the following steps: (1) etch step,
Generally carry out plasma etching by the mixed gas of Ar, O2, SF6；(2) polymer deposition step,
The mixed gas of usual Ar and C4F8 forms fluorocarbon polymer layer at hole medial surface, and its thickness is general
At nanoscale, sometimes referred to as this polymeric layer is passivation layer, for making to be not substantially formed fluorine carbon bottom hole
Polymeric layer, in this step, the relatively low RF (Radio Frequency, radio frequency) relatively of general employing is frequently
Rate；(3) etch step and polymer deposition step are alternately, until via etch completes, in etching
In step, due to the inner surface of hole, especially hole medial surface deposited polymer, vertical plasma is carved
During erosion, incident ion will not damage sidewall and be able to be protected its medial surface polymer, and vertical
Polymer failure bottom hole can be made etching reaction be continued downwards by the ion of direction incidence, thus
Ensure that the anisotropy of whole hole etching process.
Fig. 1 show the plasma-reaction-chamber of prior art and the schematic diagram of gas supply system.Such as figure
Shown in 1, this plasma-reaction-chamber is for deep reaction ion etching shown in Fig. 1.100 carve for plasma
Erosion room, wherein forms plasma, and the wafer of target etch is placed in reaction chamber 100.Gas supply system
System 150 includes at least two gas flow controller MFC160 and 170, and 160 is etching gas flow
Controller, 170 is deposition gases flow controller.Each gas flow controller is respectively connecting to few two
Individual control valve, in etch step, controls valve 161 and opens, control valve 162 and close, etching
Gas is entered in reaction chamber 100 by admission line 120；Now, control valve 171 and close, control
Valve 172 is opened, and deposition gases is evacuated pump 140 by discharge duct 122 and discharges；At deposition step
In, controlling valve 161 and close, control valve 162 and open, etching gas passes through discharge duct 122 quilt
Air pump 140 is discharged, and now, controls valve 171 and opens, controls valve 172 and close, deposition gases
Reaction chamber 100 is entered by admission line 120.In order to maintain the stability of flow of gas supply system, carve
Erosion gas flow controller 160 and deposition gases flow controller 170 are in normally open, by controlling
The control valve alternation switch Guan Bi that it connects, it is achieved etch step and the alternate of deposition step.
When performing etching step and deposition step switching, the gas in reaction chamber 100 be discharged, with
Time inject the reacting gas needed for another step, owing to the volume of reaction chamber 100 is relatively big, cause everything
Change required time longer, reduce deep reactive ion etching speed, simultaneously as etching gas flow controller
160 and deposition gases flow controller 170 be in normally open, when a certain step is carried out, another step
Rapid desired gas is discharged, and causes the waste of reacting gas.
Summary of the invention
In order to solve the problems referred to above, the invention provides and a kind of realize the plasma that reacting gas is switched fast
Precursor reactant room, including a reaction chamber, arranges a restriction ring in described reaction chamber, described restriction ring is by described
Reaction chamber is spaced apart reaction chamber superjacent air space and reaction chamber underlying space, and described reaction chamber superjacent air space is arranged
Opening connects gas supply system, and described gas supply system includes at least two flow controller, is used for
Control the first gas respectively and the second gas alternately enters in described reaction chamber superjacent air space, described reaction chamber
Underlying space arranges an opening, connects described gas supply system, and described flow controller controls institute respectively
State the first gas and the second gas alternately enters in described reaction chamber.
Preferably, described first gas is etching gas, and described second gas is deposition gases, or institute
Stating the first gas is deposition gases, and described second gas is etching gas.
Further, described etching gas includes Ar, O2, SF6；Described deposition gases include Ar and
C4F8。
Preferably, described restriction ring includes that several trough-like channels, the size of described trough-like channels are set
Become and charged particle can be made to be neutralized, to limit plasma when described charged particle is by described passage
Pass through.
Preferably, described restriction ring includes the gas passage of several substantially circular hole, and described gas leads to
The internal diameter in road is less than or equal to 10mm.
Further, described gas supply system includes etching gas flow controller and deposition gases flow
Controller, described etching gas flow controller and deposition gases flow controller front end connect etching respectively
Gas source and deposition gas source, rear end connects two respectively and controls valve.
Further, described reaction chamber includes a sidewall the most cylindrically and is positioned at the top above sidewall
Plate, arranges a gas spray below described top board, in order to will by described reaction chamber upper opening note
The reacting gas entered evenly spreads in reaction chamber.
Further, described reaction chamber includes a sidewall the most cylindrically and is positioned at the top above sidewall
Plate, described sidewall is uniformly arranged several gas inlets near one end of top board, for by gas supply
Reacting gas in system is uniformly injected in described reaction chamber.
Further, the invention also discloses a kind of method being switched fast reacting gas, including following step
Rapid:
Etch step, controls the control valve of etching gas flow controller rear end, it is provided that etching gas arrives
Reaction chamber superjacent air space, controls the control valve of deposition gases flow controller rear end simultaneously, it is provided that deposition
Gas is to reaction chamber underlying space；
Deposition step: control the control valve of deposition gases flow controller rear end, it is provided that deposition gases arrives
Reaction chamber superjacent air space；Control the control valve of etching gas flow controller rear end, it is provided that etching simultaneously
Gas is to reaction chamber underlying space；
Above-mentioned etch step and deposition step are alternately.
Further, in etch step and deposition step, described etching gas flow controller and described
Deposition gases flow controller is in normally open.
It is an advantage of the current invention that: by using technical scheme so that whole process stream
The total gas flow rate entering reaction chamber is identical, is conducive to controlling the pressure stability of reaction chamber, meanwhile, two groups of gas
Body is injected simultaneously in reaction chamber above and below reaction chamber, ensure do not affect substrate etching reaction and
While deposition reaction, the covert volume reducing reaction chamber, it is more beneficial for gas and is rapidly filled with reaction
Chamber, improves the switching rate of etch step and deposition step, and then improves the etch rate of substrate.
Simultaneously as the air pressure in reaction chamber is higher than the air pressure at air pump, faced by gas flow controller needs
Less, the most accurate, the stable control reacting gas flow velocity of pressure differential.Thus improve the steady of processing procedure
Qualitative.
Accompanying drawing explanation
Fig. 1 illustrates the structure being connected between plasma-reaction-chamber with gas supply system described in prior art
Schematic diagram；
Fig. 2 illustrates plasma-reaction-chamber of the present invention and the structural representation being connected between gas supply system
Figure；
Fig. 3 illustrates and is connected between plasma-reaction-chamber with gas supply system described in another embodiment of the present invention
Structural representation.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the present invention
It is described in further detail.
Fig. 2 illustrates plasma-reaction-chamber of the present invention and the structural representation being connected between gas supply system
Figure, plasma-reaction-chamber includes a reaction chamber 200, and reaction chamber 200 includes side the most cylindrically
Wall 212, it is positioned at the top board 210 above sidewall 212 and is positioned at the base plate 213 below sidewall 212.Reaction
Intracavity also include pedestal 235 for supporting substrate 236, in the lower section of substrate 236 around arranging a restriction
Ring 230, is spaced apart reaction chamber superjacent air space 201 and reaction chamber underlying space 202 by reaction chamber 200.Top
Arranging an air inlet 221 on plate 210, an admission line 220 connects gas supply system 250 will reaction
In needed for step, reacting gas injects reaction chamber superjacent air space 201.Below sidewall 212 or on base plate 213
Arranging an air vent 223, a discharge duct 222 connects gas supply system 250, in order to by reactions steps
In unwanted gas inject in reaction chamber underlying space 202, base plate 213 is connected with air pump 240,
In order to discharge the gas in reaction chamber.The present embodiment limits ring 230 and includes several substantially circular hole
Gas passage, the internal diameter of described gas passage is less than or equal to 10mm, in order to empty above limited reactions chamber
Between plasma in 201 enter reaction chamber underlying space 202.
Plasma etching room shown in Fig. 2 is applicable to deep reactive plasma lithographic technique, according to Fig. 1
Shown in, this technology is alternately completed by etch step and deposition step, (1) etch step,
The mixed gas (present invention is called for short etching gas) of usual Ar, O2, SF6 carries out plasma etching；
(2) deposition step, the mixed gas (present invention is called for short deposition gases) of usual Ar and C4F8 exists
Hole medial surface forms fluorocarbon polymer layer, and its thickness, typically at nanoscale, is sometimes referred to as this polymer
Layer is passivation layer, for making to be not substantially formed bottom hole fluorocarbon polymer layer, typically uses phase in this step
To relatively low RF (Radio Frequency, radio frequency) frequency relatively；(3) etch step and deposition step are handed over
For carrying out, in needing at the end of etch step etching gas is discharged reaction chamber, it is injected simultaneously into deposition gases,
Start deposition step；Need at the end of deposition step that deposition gases is discharged reaction chamber and be injected simultaneously into etching gas
Body, circulates successively, until via etch completes.
Gas supply system 250 includes etching gas flow controller 260 and deposition gases flow controller
270, etching gas flow controller 260 and deposition gases flow controller 270 front end connect etching respectively
Gas source and deposition gas source (not shown), owing to the switching rate of MFC is slower, it is impossible to realizes
Etch step and the quick of deposition step replace, simultaneously in order to ensure the flow speed stability of reacting gas, generally
Etching gas flow controller 260 and deposition gases flow controller 270 are set to normally open.Carve
Erosion gas flow controller 260 rear end connects control valve 261 and 262, controls valve 261 and 262
Alternately open and close, controlling etching gas in etch step, inject reaction chamber superjacent air space 201,
Deposition step injects reaction chamber underlying space 202；Deposition gases flow controller 270 rear end connects control
Valve 271 and 272 processed, controls valve 271 and 272 and alternately opens and close, and controls deposition gases and exists
Deposition step injects reaction chamber superjacent air space 201, etch step is injected reaction chamber underlying space
202。
When etch step starts, control valve 261 and control valve 272 is in open mode, control
Valve 262 and control valve 271 are in closure state, and now, etching gas passes through admission line 220
Enter in reaction chamber superjacent air space 201, be dissociated under the effect of electromagnetic field in reaction chamber plasma or
Neutral radical plasma, performs etching substrate, and meanwhile, deposition gases is entered by discharge duct 222
Enter reaction chamber underlying space 202 so that etching gas can reach etching without filling full whole reaction chamber
Pressure state required for step, is equivalent to the covert volume reducing reaction chamber, saves etching gas
Body.Owing to reaction chamber underlying space 202 is positioned at the lower section of substrate 236, the deposition gases in its space is not
Etching reaction can be impacted.
When deposition step starts, control valve 262 and control valve 271 is in open mode, control
Valve 261 and control valve 272 are in closure state, and now, deposition gases passes through admission line 220
Enter in reaction chamber superjacent air space 201, form fluorocarbon polymer at the hole medial surface etched and bottom
Layer, meanwhile, etching gas enters reaction chamber underlying space 202 by discharge duct 222 so that deposition
Gas can reach the pressure state required for deposition step without filling full whole reaction chamber, is equivalent to become
The volume reducing reaction chamber of phase, saves deposition gases.Owing to reaction chamber underlying space 202 is positioned at
The lower section of substrate 236, deposition reaction will not be impacted by the etching gas in its space.
When etching gas or deposition gases inject reaction chamber underlying space 202, due to reaction chamber base plate
213 connect air pump 240, and the continual work of air pump 240 makes reaction chamber underlying space 202
Interior pressure is less than the pressure of reaction chamber superjacent air space 201, thus the gas in maintaining reaction chamber is continuous
Flow downwards, it is to avoid the gas in reaction chamber underlying space 202 is by limiting ring 230 to substrate
Process technique impacts.
By using technical scheme so that whole technical process flows into the gas of reaction chamber 200
Total flow is identical, is conducive to controlling the pressure stability of reaction chamber 200, and meanwhile, two groups of gases are from reaction chamber
Above and below be injected simultaneously in reaction chamber, do not affect substrate etching reaction and deposition reaction ensureing
Meanwhile, the covert volume reducing reaction chamber, it is more beneficial for gas and is rapidly filled with reaction chamber, improve
Etch step and the switching rate of deposition step, and then improve the etch rate of substrate.
In prior art, when performing etching step or deposition step, the reacting gas of needs is injected into instead
Answer intracavity, it is not necessary to gas be then directly evacuated pump 240 drain by discharge duct, this not only causes
The waste of reacting gas, simultaneously as the air pressure at air pump is relatively low, MFC needs in the face of bigger pressure
Power changes, and easily causes the instability of gas flow rate, impacts reaction procedure.By using this
Bright technical scheme, owing to the air pressure in reaction chamber 202 is higher than the air pressure at air pump, MFC needs face
To less, the most accurate, the stable control reacting gas flow velocity of pressure differential.Thus improve processing procedure
Stability.
Fig. 3 illustrates and is connected between plasma-reaction-chamber with gas supply system described in another embodiment of the present invention
Structural representation, the ultimate principle of the present embodiment is identical with above-described embodiment with annexation, therefore identical
Parts adopt and be indicated by the same numeral, difference is, the present embodiment uses 3xx series, this enforcement
Example is applicable to inductively coupled plasma reative cell (ICP), owing to the sidewall 312 of ICP is provided above line
Circle (not shown) and insulation top board 310, it is impossible to gas spray is installed, thus close on sidewall 312
One end of top board is uniformly arranged several gas inlets 321, and gas inlet 321 is positioned at substrate 336
Top, it is connected with admission line 320, and admission line 320 connects gas supply system 350 will be anti-
Needed for answering step, reacting gas injects in reaction chamber superjacent air space 301.When etch step starts, etching
The control valve 361 of gas flow controller 360 and the control valve of deposition gases flow controller 370
372 are in open mode, control valve 362 and control valve 371 is in closure state, now, carve
Erosion gas enters in reaction chamber superjacent air space 301 by admission line 320, electromagnetic field in reaction chamber
It is dissociated into plasma or Neutral radical plasma under effect, substrate is performed etching, meanwhile, sidewall
Arranging an air vent 323 below 312 or on base plate 313, a discharge duct 322 connects gas supply system
350, deposition gases enters reaction chamber underlying space 302 so that etching gas is without filling full whole reaction
Chamber can reach the pressure state required for etch step, is equivalent to the covert volume reducing reaction chamber,
Save etching gas.Base plate 313 is connected with air pump 340, in order to discharge the gas in reaction chamber.
Owing to reaction chamber underlying space 302 is positioned at the lower section of substrate 336, the deposition gases in its space will not be right
Etching reaction impacts.
When deposition step starts, control valve 362 and control valve 371 is in open mode, control
Valve 361 and control valve 372 are in closure state, and now, deposition gases passes through admission line 320
Enter in reaction chamber superjacent air space 301, form fluorocarbon polymer at the hole medial surface etched and bottom
Layer, meanwhile, etching gas enters reaction chamber underlying space 302 by discharge duct 322 so that deposition
Gas can reach the pressure state required for deposition step without filling full whole reaction chamber, is equivalent to become
The volume reducing reaction chamber of phase, saves deposition gases.Owing to reaction chamber underlying space 302 is positioned at
The lower section of substrate 336, deposition reaction will not be impacted by the etching gas in its space.
In the present embodiment, limit ring 330 and include several trough-like channels, the size of described trough-like channels
It is configured to when described charged particle is by described passage to make charged particle be neutralized, with restriction etc.
Passing through of gas ions.The other technologies feature of the present embodiment is identical with above-described embodiment, the most one by one
Repeat.
The structure of technical scheme not subject plasma reaction chamber and the technology shadow of generation plasma
Ring, needing substrate is performed etching step and in technology that deposition step alternately etches, can
Use technical solutions according to the invention, although present disclosure is made by above preferred embodiment
It is discussed in detail, but it should be appreciated that the description above is not considered as limitation of the present invention.At this
After skilled person has read foregoing, for the present invention multiple amendment and substitute all will be show and
It is clear to.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. realize the plasma-reaction-chamber that reacting gas is switched fast, including a reaction chamber, described reaction
Intracavity arranges a restriction ring, and described reaction chamber is spaced apart reaction chamber superjacent air space with anti-by described restriction ring
Answer chamber underlying space, it is characterised in that: described reaction chamber superjacent air space arranges opening and connects gas supply
System, described gas supply system includes at least two flow controller, for controlling the first gas respectively
Body and the second gas alternately enter in described reaction chamber superjacent air space, and described reaction chamber underlying space is arranged
One opening, connects described gas supply system, and described flow controller controls described first gas respectively
Alternately enter in described reaction chamber underlying space with the second gas.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: described first gas is for carving
Erosion gas, described second gas is deposition gases, or described first gas is deposition gases, described
Second gas is etching gas.
Plasma-reaction-chamber the most according to claim 2, it is characterised in that: described etching gas includes
Ar、O2、SF6；Described deposition gases includes Ar and C4F8.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: if described restriction ring includes
Dry trough-like channels, being configured and dimensioned to when charged particle is led to by described channel-shaped of described trough-like channels
Charged particle can be made during road to be neutralized, to limit passing through of plasma.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: if described restriction ring includes
The gas passage of dry individual substantially circular hole, the internal diameter of described gas passage is less than or equal to 10mm.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: described gas supply system
Including etching gas flow controller and deposition gases flow controller, described etching gas flow controls
Device and deposition gases flow controller front end connect etch gas source and deposition gas source respectively, and rear end is divided
Lian Jie two control valves.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: described reaction chamber includes one
Sidewall the most cylindrically and be positioned at the top board above sidewall, arranges a gas spray below described top board
Drench head, in order to the reacting gas by injecting at described reaction chamber upper opening is evenly spread to reaction
Intracavity.
Plasma-reaction-chamber the most according to claim 1, it is characterised in that: described reaction chamber includes one
Sidewall the most cylindrically and be positioned at the top board above sidewall, described sidewall is equal near one end of top board
Even several gas inlets are set, for the reacting gas in gas supply system is uniformly injected into institute
State in reaction chamber.
9. the method being switched fast reacting gas, it is characterised in that: comprise the following steps:
Etch step, controls the control valve of etching gas flow controller rear end, it is provided that etching gas is to anti-
Answer chamber superjacent air space, control the control valve of deposition gases flow controller rear end simultaneously, it is provided that deposition
Gas is to reaction chamber underlying space；
Deposition step: control the control valve of deposition gases flow controller rear end, it is provided that deposition gases is to anti-
Answer chamber superjacent air space；Control the control valve of etching gas flow controller rear end, it is provided that etching simultaneously
Gas is to reaction chamber underlying space；
Above-mentioned etch step and deposition step are alternately.
The method being switched fast reacting gas the most according to claim 9, it is characterised in that: in etching step
In rapid and deposition step, at described etching gas flow controller and described deposition gases flow controller
In normally open.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310140971.1A CN104112639B (en) | 2013-04-22 | 2013-04-22 | A kind of realize plasma-reaction-chamber and the method thereof that reacting gas is switched fast |
| TW103114003A TWI540640B (en) | 2013-04-22 | 2014-04-17 | And a method for realizing a rapid switching of the reaction gas and a method thereof |
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|---|---|---|---|
| CN201310140971.1A CN104112639B (en) | 2013-04-22 | 2013-04-22 | A kind of realize plasma-reaction-chamber and the method thereof that reacting gas is switched fast |
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| CN104112639B true CN104112639B (en) | 2016-09-28 |
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| CN106898561A (en) * | 2015-12-21 | 2017-06-27 | 中微半导体设备(上海)有限公司 | Improve method, the lithographic method of etching technics endpoint monitoring accuracy |
| CN108231621A (en) * | 2016-12-15 | 2018-06-29 | 中微半导体设备(上海)有限公司 | The processing unit and method of a kind of plasma etch process |
| CN107195525B (en) * | 2017-05-16 | 2018-09-25 | 中国电子科技集团公司第四十八研究所 | A kind of inductively coupled plasma etching equipment |
| CN107195526A (en) * | 2017-06-08 | 2017-09-22 | 上海华力微电子有限公司 | A kind of method rubbed between the part for reducing board |
| CN115966451A (en) * | 2021-10-11 | 2023-04-14 | 中微半导体设备(上海)股份有限公司 | Confinement ring and plasma processing apparatus |
| CN116288261A (en) * | 2021-12-07 | 2023-06-23 | 拓荆科技股份有限公司 | Deposition system and method |
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|---|---|---|---|---|
| CN1675750A (en) * | 2002-08-16 | 2005-09-28 | 优利讯美国有限公司 | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
| CN102498546A (en) * | 2009-09-17 | 2012-06-13 | 东京毅力科创株式会社 | Film formation apparatus |
| CN102832096A (en) * | 2012-09-20 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Gas supplying device for vacuum treatment devices and gas supplying and switching method of gas supplying device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4602532B2 (en) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP4493932B2 (en) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | Upper electrode and plasma processing apparatus |
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- 2013-04-22 CN CN201310140971.1A patent/CN104112639B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1675750A (en) * | 2002-08-16 | 2005-09-28 | 优利讯美国有限公司 | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
| CN102498546A (en) * | 2009-09-17 | 2012-06-13 | 东京毅力科创株式会社 | Film formation apparatus |
| CN102832096A (en) * | 2012-09-20 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Gas supplying device for vacuum treatment devices and gas supplying and switching method of gas supplying device |
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| TW201448033A (en) | 2014-12-16 |
| CN104112639A (en) | 2014-10-22 |
| TWI540640B (en) | 2016-07-01 |
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