CN104101945A - Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof - Google Patents
Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof Download PDFInfo
- Publication number
- CN104101945A CN104101945A CN201410352019.2A CN201410352019A CN104101945A CN 104101945 A CN104101945 A CN 104101945A CN 201410352019 A CN201410352019 A CN 201410352019A CN 104101945 A CN104101945 A CN 104101945A
- Authority
- CN
- China
- Prior art keywords
- thin film
- semiconductive thin
- micro
- optical waveguide
- dish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a horizontal slit optical waveguide based microdisk resonant cavity and a production method thereof. The horizontal slit optical waveguide based microdisk resonant cavity and the production method thereof belongs to the field of integrated optical sensing. The method uses the high selectivity ratio of wet etching to produce a horizontal slit optical waveguide with a smooth surface so as to maintain the characteristic of restricting light in a material in lower refractive index of the waveguide, and meanwhile solves the problem of high transmission loss of traditional slit optical waveguides. Furthermore, a central column support microdisk structure is combined to form an optical resonant cavity with high-quality factors. The horizontal slit optical waveguide based microdisk resonant cavity facilitates the forming of high-sensitivity biological or chemical integrated sensors.
Description
Technical field
The invention belongs to integrated-type light sensory field, particularly relate to a kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide and preparation method thereof.
Background technology
In 21 century, in the researchs such as clinical diagnosis, Industry Control, food and the Pharmaceutical Analysis of biosensor technology in national economy (comprising bio-pharmaceutical research and development), environmental protection and biotechnology, biochip, have a wide range of applications.Have mechanism's analytical table bright, the world market value of biology sensor by develop rapidly, reached suitable with Optical Communication Market in recent years.Compare with electricity or micromechanical sensor, optical biosensor has very large advantage at aspects such as detection mode, accuracy of detection, response time, stability.Wherein, integrated-type optical sensor, and respective chip laboratory (lab-on-a-chip), especially receive researcher and investors' concern.Particularly adopt the height integrated sensor of miniature optical resonant structure, they have low price, required sample volume little, can easily with the feature such as other function element is integrated.
Narrow slit wave-guide is a kind of novel waveguide structure (as shown in Figure 1) proposing in recent years, and it is conventionally by two high index of refraction rectangles 1, and one of them slit 2 forms.Due to the uncontinuity of electric field, most of light field can being limited in slit, as shown in Figure 2 of this kind of waveguide.And this slit 2 is connected with extraneous top covering 3, if therefore extraneous material character (as: refractive index) changes, will light field be produced than common waveguide and be affected more significantly.Single narrow slit wave-guide many narrow slit wave-guides (as shown in Figure 3) derivative and that come in Fig. 1 can further improve the ratio of light field in slit.In conjunction with single or many narrow slit wave-guides and miniature optical resonant cavity, can realize in theory the higher biological or chemical sensor of sensitivity.
But, because the traditional narrow slit wave-guide in Fig. 1 or Fig. 3 adopts photoetching and dry etching conventionally, make, two sidewalls of slit are more coarse, and light field peak place just, slit place, cause loss larger, and the optical resonator quality factor consisting of it is also lower.Therefore, the transducer sensitivity based on this structure does not significantly improve with respect to traditional optical waveguide structure.The problems referred to above, urgently to be resolved hurrily.
Summary of the invention
The object of this invention is to provide a kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide with and preparation method thereof.The method is utilized the high selectivity of wet etching, make the horizontal narrow slit optical waveguide with smooth surface, to keep this kind of waveguide light can be limited in to the characteristic in low-index material, solve the high-transmission loss problem of traditional slit optical waveguide simultaneously, and further combined with micro-dish structure of central rods supporting form, can form the optical resonator with high-quality-factor, this device contributes to realize high-sensitivity biological or chemical integrated sensor.
A kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide, comprise a micro-dish of circle, described micro-rim axial direction is by semiconductive thin film first and semiconductive thin film second is alternately laminated forms, described semiconductive thin film first is positioned at skin, described semiconductive thin film first arranges with semiconductive thin film second is concentric, described semiconductive thin film Yi Beicong edge, to the internal corrosion part of entering, forms by the unsettled micro-dish resonator cavity forming of multi-lager semiconductor film first.
In order to obtain better technique effect, further technological improvement is, described semiconductive thin film first and described semiconductive thin film second is by containing In, Al, and Ga, As, the compound of P element is made.
In order to obtain better technique effect, further technological improvement is, the diameter of described semiconductive thin film first and described semiconductive thin film second is 1 μ m ~ 100 μ m.
In order to obtain better technique effect, further technological improvement is, the thickness of described semiconductive thin film first and semiconductive thin film second is 10nm ~ 1 μ m, and the width that described semiconductive thin film second is radially corroded is 10nm ~ 1 μ m.
A kind of method for making of the micro-dish resonator cavity based on horizontal narrow slit optical waveguide, comprise the following steps: a) will be by In, Al, Ga, As, compound semiconductor film first and semiconductive thin film second that P element forms according to heterogeneity ratio are stacked alternately, and by traditional extension, deposition or bonding method, make described film first and described film second alternating growth; B) by using photoetching and dry etch process that described semiconductive thin film first and described semiconductive thin film second are made into circular micro-dish; C) select suitable chemical corrosion liquid, utilize wet corrosion technique, from the edge of the micro-dish of described circle, inwardly described semiconductive thin film first or described semiconductive thin film second are corroded, form a kind of by center column support structure, micro-dish resonator cavity that edge is comprised of multilayer free standing structure film.
The invention has the beneficial effects as follows: 1. method provided by the invention can realize ganoid slit optical waveguide easily, can effectively solve the large problem of traditional narrow slit wave-guide loss.
2. method provided by the invention is to utilize wet etching cheaply to make crucial narrow slit wave-guide, so processing step is simple, and equipment investment is low.
3. micro-dish resonator cavity provided by the invention is comprised of the narrow slit wave-guide of above-mentioned low transmission loss, has both had light is limited in to the characteristic in low-index material, also has higher quality factor, can be used to make highly sensitive biological or chemical sensor.
Accompanying drawing explanation
Single slit waveguide structure that Fig. 1 is traditional.
Single slit waveguide structure electric field of the fundamental mode that Fig. 2 is traditional distributes.
Many slit waveguide structures that Fig. 3 is traditional.
Fig. 4 embodiments of the invention step a.
Fig. 5 embodiments of the invention step b.
Fig. 6 embodiments of the invention step c, and the micro-dish resonator cavity based on single horizontal narrow slit optical waveguide.
The electric field of the fundamental mode of Fig. 7 micro-dish resonator cavity based on single horizontal narrow slit optical waveguide of the present invention distributes.
Fig. 8 micro-dish resonator cavity based on multilevel slit optical waveguide of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.
Embodiment 1 as shown in Figure 4, will be by In, Al, and Ga, As, compound semiconductor film first 4 and semiconductive thin film second 5 that P element forms according to heterogeneity ratio, grow on substrate 6, and wherein semiconductive thin film second 5 is sandwiched between semiconductive thin film first 4.Growth pattern adopts the techniques such as molecular beam epitaxy or metal organic chemical vapor deposition or bonding conventionally, and the thickness of semiconductive thin film first 4 and semiconductive thin film second 5 is 10nm.
As shown in Figure 5, semiconductive thin film first 4 and semiconductive thin film second 5 are made into circular micro-dish by techniques such as photoetching and dry etchings, such technique has guaranteed the verticality of circular micro-dish sidewall, and the diameter of circular micro-dish is 100um.
As shown in Figure 6, by wet etching by semiconductive thin film second 5 from sidewall gradually to internal corrosion, because the ratio of various elements is different, therefore when semiconductive thin film first 4 and semiconductive thin film second 5 are carried out to wet etching, corrosion rate has marked difference, and namely selection is larger than very, by controlling etching time, guarantee that semiconductive thin film second 5 is not corroded completely, the width that semiconductive thin film second 5 is radially corroded is 1 μ m.Make like this to leave a part in disc centre and support, guarantee that whole micro-dish structure can not cave in.Edge at micro-dish forms two free standing structure film structures that consist of semiconductive thin film first 4, is single narrow slit wave-guide of horizontal direction.The slit interface that this method is made is very smooth, can reach atom magnitude, and the waveguide loss of making is little.
The mode of resonance Electric Field Distribution of the single narrow slit wave-guide that is illustrated in figure 7 horizontal direction in micro-dish resonator cavity.Under the effect of micro-dish resonator cavity, light field is limited in the edge of micro-dish, the level list narrow slit wave-guide place being formed by semiconductive thin film first 4, and by sideetching, entered not had by semiconductive thin film first 5 and light field overlapping, therefore can there is not any impact to the character of the optical mode of resonator cavity.
As shown in Figure 8, semiconductive thin film first 4 and semiconductive thin film second 5, when the film growth of step 1 (as shown in Figure 4), can repeatedly, form the overlapping structure of multilayer.The technique of step 2 (as shown in Figure 5) and step 3 (as shown in Figure 6) and aforementioned similar.A micro-dish resonator cavity of final formation, its edge is the multilayer free standing structure film that semiconductive thin film first 4 forms, and forms many narrow slit wave-guides of horizontal direction.
The thickness of embodiment 2 semiconductive thin film first 4 and semiconductive thin film second 5 is 1um, and the diameter of disk is 1um, and the width that semiconductive thin film second 5 is radially corroded is 1 μ m, and other technical characterictic is with embodiment 1.
What more than enumerate is only specific embodiments of the invention, obviously, the invention is not restricted to above embodiment.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should belong to protection scope of the present invention.
Claims (5)
1. the micro-dish resonator cavity based on horizontal narrow slit optical waveguide, it is characterized in that: comprise a micro-dish of circle, the micro-rim of described circle axial direction is by semiconductive thin film first (4) and semiconductive thin film second (5) alternately laminated composition, described semiconductive thin film first (4) is positioned at skin, described semiconductive thin film first (4) and the concentric setting of semiconductive thin film second (5), described semiconductive thin film second (5) Bei Cong edge, to the internal corrosion part of entering, forms the micro-dish resonator cavity by the unsettled formation of multi-lager semiconductor film first (4).
2. a kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide according to claim 1, is characterized in that: described semiconductive thin film first (4) and described semiconductive thin film second (5) is by containing In, Al, and Ga, As, the compound of P element is made.
3. a kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide according to claim 1, is characterized in that: described semiconductive thin film first (4) is 1 μ m ~ 100 μ m with the diameter of described semiconductive thin film second (5).
4. a kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide according to claim 1, it is characterized in that: described semiconductive thin film first (4) is 10nm ~ 1 μ m with the thickness of semiconductive thin film second (5), and the width that described semiconductive thin film second (5) is radially corroded is 10nm ~ 1 μ m.
5. the method for making of the micro-dish resonator cavity based on horizontal narrow slit optical waveguide, comprise the following steps: a) will be by In, Al, Ga, As, the compound semiconductor film first (4) that P element forms according to heterogeneity ratio is stacked alternately with semiconductive thin film second (5), by traditional extension, deposition or bonding method, makes described semiconductive thin film first (4) and described semiconductive thin film second (5) alternating growth; B) by using photoetching and dry etch process that described semiconductive thin film first (4) and described semiconductive thin film second (5) are made into circular micro-dish; C) utilize wet corrosion technique, from the edge of the micro-dish of described circle, inwardly described semiconductive thin film second (5) is corroded, form by center column support structure, micro-dish resonator cavity that edge is comprised of multilayer free standing structure film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410352019.2A CN104101945A (en) | 2014-07-23 | 2014-07-23 | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410352019.2A CN104101945A (en) | 2014-07-23 | 2014-07-23 | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104101945A true CN104101945A (en) | 2014-10-15 |
Family
ID=51670229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410352019.2A Pending CN104101945A (en) | 2014-07-23 | 2014-07-23 | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104101945A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
CN110212078A (en) * | 2019-06-14 | 2019-09-06 | 厦门大学 | A kind of micro- disk resonant cavity light emitting devices of electrical pumping and preparation method thereof |
CN114447748A (en) * | 2022-01-06 | 2022-05-06 | 中国地质大学(武汉) | Microdisk resonator based on multi-layer step suspension structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11507471A (en) * | 1995-05-25 | 1999-06-29 | ノースウエスタン ユニーバーシティ | Microcavity semiconductor laser |
US20080024053A1 (en) * | 2006-07-26 | 2008-01-31 | Kabushiki Kaisha Toshiba | Three-dimensional structure, light emitting element including the structure, and method for manufacturing the structure |
CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
CN204028397U (en) * | 2014-07-23 | 2014-12-17 | 宁波屹诺电子科技有限公司 | A kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide |
-
2014
- 2014-07-23 CN CN201410352019.2A patent/CN104101945A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11507471A (en) * | 1995-05-25 | 1999-06-29 | ノースウエスタン ユニーバーシティ | Microcavity semiconductor laser |
US20080024053A1 (en) * | 2006-07-26 | 2008-01-31 | Kabushiki Kaisha Toshiba | Three-dimensional structure, light emitting element including the structure, and method for manufacturing the structure |
CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
CN204028397U (en) * | 2014-07-23 | 2014-12-17 | 宁波屹诺电子科技有限公司 | A kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide |
Non-Patent Citations (1)
Title |
---|
涂鑫: "耦合型回音壁模式光学微腔的构建与光学性质研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
CN110212078A (en) * | 2019-06-14 | 2019-09-06 | 厦门大学 | A kind of micro- disk resonant cavity light emitting devices of electrical pumping and preparation method thereof |
CN114447748A (en) * | 2022-01-06 | 2022-05-06 | 中国地质大学(武汉) | Microdisk resonator based on multi-layer step suspension structure |
CN114447748B (en) * | 2022-01-06 | 2023-09-01 | 中国地质大学(武汉) | Micro-disc resonator based on multilayer step suspension structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101592627B (en) | Method for manufacturing and integrating multichannel high-sensitive biosensor | |
CN101349643B (en) | Multichannel surface plasma wave sensing detection system | |
CN104101945A (en) | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof | |
CN102764677B (en) | Preparation method of localized surface plasmon resonance (LSPR) microfluidic chip | |
CN104483498A (en) | Sensing chip and preparation method thereof | |
CN204028397U (en) | A kind of micro-dish resonator cavity based on horizontal narrow slit optical waveguide | |
US20220274107A1 (en) | Detection chip and modification method therefor | |
Baracu et al. | Metasurface fabrication by cryogenic and Bosch deep reactive ion etching | |
CN102320558B (en) | Manufacturing method for cavity of full silica-based microfluidic device | |
US20240204190A1 (en) | Differential suspended single-layer graphene nanopore sensor, and preparation method therefor and use thereof | |
Kandziolka et al. | Silicon nanopillars as a platform for enhanced fluorescence analysis | |
Demming et al. | Disposable parallel poly (dimethylsiloxane) microbioreactor with integrated readout grid for germination screening of Aspergillus ochraceus | |
Li et al. | Surface-scribed transparency-based microplates | |
CN105548136B (en) | A kind of transparent SERS substrate and micro-fluidic chip, preparation method and application | |
CN104157741A (en) | Preparation method of photoelectric detector | |
CN105731352A (en) | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same | |
CN105060240A (en) | Method for improving surface roughness of side wall of AMR MEMS device | |
Zhu et al. | Micro-patterning and characterization of PHEMA-co-PAM-based optical chemical sensors for lab-on-a-chip applications | |
CN103105378B (en) | Biosensor, manufacturing method thereof and biosensor testing system | |
CN104090104A (en) | Carbon nanotube micro-cantilever biosensor for detecting tumor marker with concentration of 0.5-10[mu]g/mL | |
CN102659070A (en) | Integrated photon chip and preparation method thereof | |
US11266983B2 (en) | Pillar structure for biochip | |
CN110926666B (en) | Pressure sensing device based on surface plasmon polariton lattice resonance | |
CN104777135A (en) | Full-wavelength local plasma resonant transducer and preparation method thereof | |
Bhalla et al. | Endorsing a Hidden Plasmonic Mode for Enhancement of LSPR Sensing Performance in Evolved Metal–insulator Geometry Using an Unsupervised Machine Learning Algorithm |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141015 |
|
RJ01 | Rejection of invention patent application after publication |