CN104037733B - A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology - Google Patents
A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology Download PDFInfo
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- CN104037733B CN104037733B CN201410243027.3A CN201410243027A CN104037733B CN 104037733 B CN104037733 B CN 104037733B CN 201410243027 A CN201410243027 A CN 201410243027A CN 104037733 B CN104037733 B CN 104037733B
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Abstract
A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology, including the first capacitance group C1, the second capacitance group C2,4 full-control types semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit (7).First full-control type semiconductor device (T1), the second full-control type semiconductor device (T2) and the first capacitance group (C1)；3rd full-control type semiconductor device (T3), the 4th full-control type semiconductor device (T4) and the second capacitance group (C2) connect into half-bridge subelement form respectively.Terminal (11,12,13,14,15,16) positive pole (1), the negative pole (2) with the first capacitance group (C1) respectively of six extractions of Fault Isolation combinational circuit (7), the positive pole (3) of the second capacitance group (C2), negative pole (4), the junction point (5) of T1 and T2, T3 is connected with the junction point (6) of T4.
Description
Technical field
The present invention relates to a kind of DC Line Fault isolated form flexible direct current transmission converter station subelement.
Background technology
Due to the unique advantage of the direct current transportation based on voltage source conversion, it is cleaning new energy is grid-connected, city power transmission and distribution
The fields such as capacity-increasing transformation, marine island load power transmission have broad application prospects.Based on modularization multi-level converter
(modular multilevel converter, MMC) is due to, in the form of half-bridge sub-module cascade, having consistent to device
Triggering dynamic voltage balancing requirement is low, favorable expandability, output voltage waveforms quality are high, switching frequency is low, running wastage is low many excellent
Point, it has also become the main trend that current commutation device selects.But this structure exist cannot effective process DC Line Fault intrinsic
Defect.When DC side breaks down, the antiparallel fly-wheel diode of full-controlled switch device institute easily constitutes trouble point and friendship
The energy that streaming system directly connects feeds loop it is impossible to rely on merely inverter action to complete the removing of DC side fault current.
The VSC-HVDC engineering having put into operation at present adopts cable laying circuit mostly, and to reduce DC Line Fault probability of happening, but cost is held high
Expensive, deficiency in economic performance.
Using the self-cleaning of inverter itself control realization DC side fault, without plant equipment action, therefore system recovery
Quickly, this technology has been widely used in Traditional DC technology of transmission of electricity, that is, pass through to force phase shift quickly to eliminate arc road electric current.Find
There is the new inverter of DC Line Fault ride-through capability, and, this is the study hotspot of academic circles at present and industrial quarters.2010
ALSTOM company proposes the mixing of multiple combination tradition two level converters and MMC construction featuress on international conference on large HV electric systems
Formula inverter, its bridge arm alternate conduction multilevel converter and Mixed cascading multilevel converter are respectively provided with DC Line Fault and pass through
Ability.But control complex, the equilibrium of subelement capacitance voltage is more difficult.Using full-bridge submodule (full bridge
Sub-module, FBSM) although also having direct current locking function, it is lost larger when being up, and current conversion station cost shows
Write and increase.
Content of the invention
The purpose of the present invention is to overcome prior art not enough, proposes a kind of new DC Line Fault isolated form flexible DC power transmission
Current conversion station subelement topology.The present invention can make whole current conversion station while possessing DC side troubleshooting capability, normal operation
When reduce loss as far as possible, and current conversion station construction cost can be reduced.
DC Line Fault isolated form flexible direct current transmission converter station subelement of the present invention can be by the first capacitance group, the second electric capacity
Group, four full-control type semiconductor device, and Fault Isolation combinational circuit composition, its connected mode is as follows：
The positive pole of the first capacitance group is connected with the colelctor electrode of the first full-control type semiconductor device；First full-control type semiconductor device
The emitter stage of part is connected with the colelctor electrode of the second full-control type semiconductor device, as the first wholly-controled device junction point；Second is complete
The emitter stage of control type semiconductor device is connected with the negative pole of the first capacitance group；The positive pole of the second capacitance group is partly led with the 3rd full-control type
The colelctor electrode of body device connects；The emitter stage of the 3rd full-control type semiconductor device and the colelctor electrode of the 4th full-control type semiconductor device
Connect, as the second wholly-controled device junction point；The emitter stage of the 4th full-control type semiconductor device and the negative pole of the second capacitance group
Connect.
First leading-out terminal of Fault Isolation combinational circuit is connected with the positive pole of the first capacitance group, Fault Isolation combinational circuit
The second leading-out terminal be connected with the negative pole of the first capacitance group, the three terminal of Fault Isolation combinational circuit and the second electric capacity
The positive pole of group connects, and the 4th leading-out terminal of Fault Isolation combinational circuit is connected with the negative pole of the second capacitance group, Fault Isolation group
The 5th leading-out terminal closing circuit is connected with the first wholly-controled device junction point, the 5th leading-out terminal of Fault Isolation combinational circuit
It is connected with the second wholly-controled device junction point.7th terminal of Fault Isolation combinational circuit is flexible straight as DC Line Fault isolated form
First leading-out terminal of stream power transmission converter station subelement, the 8th terminal of Fault Isolation combinational circuit is as DC Line Fault isolated form
Second leading-out terminal of flexible direct current transmission converter station subelement.
During described subelement normal work, when the first full-control type semiconductor device turns off, the second full-control type semiconductor device
Part is open-minded, and the 3rd full-control type semiconductor device is open-minded, and when the 4th full-control type semiconductor device turns off, described subelement first draws
Going out voltage between terminal and the second leading-out terminal is 0, and the first capacitance group and the second capacitance group do not access circuit.
When the first full-control type semiconductor device turns off, the second full-control type semiconductor device is open-minded, the 3rd full-control type quasiconductor
Device turns off, when the 4th full-control type semiconductor device is opened, described subelement first leading-out terminal and the second leading-out terminal it
Between voltage be the second capacitance group both end voltage；First capacitance group does not access circuit.
When the first full-control type semiconductor device is open-minded, the second full-control type semiconductor device turns off, the 3rd full-control type quasiconductor
Device turns off, when the 4th full-control type semiconductor device is opened, described subelement first leading-out terminal and the second leading-out terminal it
Between voltage be the first capacitance group both end voltage；Second capacitance group does not access circuit.
When the first full-control type semiconductor device is open-minded, the second full-control type semiconductor device turns off, the 3rd full-control type quasiconductor
Device is open-minded, when the 4th full-control type semiconductor device turns off, described subelement first leading-out terminal and the second leading-out terminal it
Between voltage be the first capacitance group and the second capacitance group both end voltage sum.
During described subelement locking, according to the difference of Fault Isolation combinational circuit structure, operation principle is also different.
Described Fault Isolation combinational circuit can be combined by the first diode (led) module and the 6th full-control type semiconductor device
Composition it is also possible to be combined into it is also possible to by the first diode by the second diode (led) module and the 5th full-control type semiconductor device group
Module and the 5th full-control type semiconductor device group are combined into it is also possible to by the second diode (led) module and the 6th full-control type semiconductor device
Part group is combined into it is also possible to complete by the first diode (led) module, the second diode (led) module, the 5th full-control type semiconductor device and the 6th
Control type semiconductor device group is combined into.
When described Fault Isolation combinational circuit is by the first diode (led) module, the second diode (led) module, the 5th full-control type half
When conductor device, the 6th full-control type semiconductor device composition, the negative electrode of the first diode (led) module and Fault Isolation combinational circuit
The first terminal connects, and the anode of the first diode (led) module is connected with the colelctor electrode of the 5th full-control type semiconductor device, and the 5th controls entirely
The emitter stage of type semiconductor device is connected with the Second terminal of Fault Isolation combinational circuit, the collection of the 6th full-control type semiconductor device
Electrode is connected with the third terminal of Fault Isolation combinational circuit, the emitter stage of the 6th full-control type semiconductor device and the second diode
The negative electrode of module connects, and the anode of the second diode (led) module is connected with the forth terminal of Fault Isolation combinational circuit.6th controls entirely
The emitter stage of type semiconductor device is connected with the colelctor electrode of the 5th full-control type semiconductor device.The 5th of Fault Isolation combinational circuit
Terminal is connected with the 7th terminal of Fault Isolation combinational circuit, and the 6th terminal of Fault Isolation combinational circuit and the 8th terminal are even
Connect.After all full-control type semiconductor device lockings, when electric current flows into from described subelement first leading-out terminal, the first electric capacity
Group, the second capacitance group forward-, series access circuit, and the first capacitance group both end voltage and the second capacitance group both end voltage sum are formed
Counter electromotive force, blocks inflow current.When electric current flows into from described subelement second leading-out terminal, the first capacitance group, second
Capacitance group forward-, series access circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form anti-electronic
Gesture, blocks inflow current.
When described Fault Isolation combinational circuit is charge-coupled by the first diode (led) module and the 6th full-control type semiconductor device group
Cheng Shi, the emitter stage of the 6th full-control type semiconductor device is connected with the 5th terminal of Fault Isolation combinational circuit, the 6th full-control type
The colelctor electrode of semiconductor device is connected with the third terminal of Fault Isolation combinational circuit.The negative electrode of the first diode (led) module and fault
The first terminal of isolation combinational circuit connects, and the anode of the first diode (led) module is connected with the forth terminal of Fault Isolation combinational circuit
Connect.Under this connected mode, the first terminal of Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit
Connect, the 6th terminal of Fault Isolation combinational circuit is connected with the 8th terminal.The Second terminal of Fault Isolation combinational circuit is vacant.Institute
After having full-control type semiconductor device locking, when electric current flows into from described subelement first leading-out terminal, the first capacitance group, the
Two capacitance group forward-, series access circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form anti-electronic
Gesture, blocks inflow current.When electric current flows into from described subelement second leading-out terminal, the first capacitance group, the second capacitance group
Forward-, series access circuit, the first capacitance group bypass, and the second capacitance group is positive to access circuit, and the second capacitance group both end voltage is formed
Counter electromotive force, blocks inflow current.
When described Fault Isolation combinational circuit is made up of the 5th full-control type semiconductor device, the second diode (led) module.The
The emitter stage of five full-control type semiconductor device is connected with the Second terminal of Fault Isolation combinational circuit, the 5th full-control type semiconductor device
The colelctor electrode of part is connected with the third terminal of Fault Isolation combinational circuit.The negative electrode of the second diode (led) module is combined with Fault Isolation
The first terminal of circuit connects, and the anode of the first diode (led) module is connected with the forth terminal of Fault Isolation combinational circuit.Fault
5th terminal of isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, and the 4th of Fault Isolation combinational circuit the
Terminal is connected with the 8th terminal.The third terminal of Fault Isolation combinational circuit is vacant.After all full-control type semiconductor device lockings,
When electric current flows into from described subelement first leading-out terminal, the first capacitance group, the second capacitance group forward-, series access circuit,
First capacitance group both end voltage and the second capacitance group both end voltage sum form counter electromotive force, block inflow current.When electric current from
When described subelement second leading-out terminal flows into, the second capacitance group bypass, the first capacitance group is positive to access circuit, the first electric capacity
Group both end voltage forms counter electromotive force, blocks inflow current.
This DC Line Fault isolated form flexible direct current transmission converter station subelement topology can also only by the first capacitance group,
One full-control type semiconductor device, the second full-control type semiconductor device and Fault Isolation circuit composition；The positive pole of the first capacitance group with
The colelctor electrode of the first full-control type semiconductor device connects；The emitter stage of the first full-control type semiconductor device (T1) and the second full-control type
The colelctor electrode of semiconductor device connects, as the first wholly-controled device junction point；The emitter stage of the second full-control type semiconductor device
It is connected with the negative pole of the first capacitance group.
First leading-out terminal of described Fault Isolation combinational circuit is connected with the positive pole of the first capacitance group, and Fault Isolation combines
Second leading-out terminal of circuit is connected with the negative pole of the first capacitance group, the 5th leading-out terminal of Fault Isolation combinational circuit and first
Wholly-controled device junction point connects, and the 7th terminal of Fault Isolation combinational circuit is as DC Line Fault isolated form flexible DC power transmission
First leading-out terminal of current conversion station subelement, the 8th terminal of Fault Isolation combinational circuit is flexible straight as DC Line Fault isolated form
Second leading-out terminal of stream power transmission converter station subelement.
Described Fault Isolation combinational circuit is made up of with the 5th full-control type semiconductor device the first diode；First diode
Negative electrode be connected with the first terminal of Fault Isolation combinational circuit, the anode of the first diode and the 5th full-control type semiconductor device
Colelctor electrode connect, the emitter stage of the 5th full-control type semiconductor device is connected with the Second terminal of Fault Isolation combinational circuit.
5th terminal of described Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, fault every
The 8th terminal from combinational circuit is connected with the colelctor electrode of the 5th full-control type semiconductor device；The 3rd of Fault Isolation combinational circuit
Terminal, forth terminal, the 6th terminal are vacant.After all full-control type semiconductor device lockings, when electric current is from described subelement
When one leading-out terminal flows into, the first capacitance group is positive to access circuit, and the first capacitance group both end voltage forms counter electromotive force, blocks stream
Enter electric current.When electric current flows into from described subelement second leading-out terminal, the first capacitance group is positive to access circuit, the first electric capacity
Group both end voltage forms counter electromotive force, blocks inflow current.
This DC Line Fault isolated form flexible direct current transmission converter station subelement topology can also only by the second capacitance group,
Three full-control type semiconductor device, the 4th full-control type semiconductor device and Fault Isolation circuit composition；The positive pole of the second capacitance group with
The colelctor electrode of the 3rd full-control type semiconductor device connects；The emitter stage of the 3rd full-control type semiconductor device and the 4th full-control type are partly led
The colelctor electrode of body device connects, as the second wholly-controled device junction point；The emitter stage of the 4th full-control type semiconductor device and
The negative pole of two capacitance group connects.
Three terminal of Fault Isolation combinational circuit is connected with the positive pole of the second capacitance group, Fault Isolation combinational circuit
The 4th leading-out terminal be connected with the negative pole of the second capacitance group, the 5th leading-out terminal of Fault Isolation combinational circuit is controlled entirely with second
Type device junction point connects；7th terminal of Fault Isolation combinational circuit is as the DC Line Fault isolated form flexible DC power transmission change of current
Stand the first leading-out terminal of subelement, the 8th terminal of Fault Isolation combinational circuit is defeated as DC Line Fault isolated form flexible direct current
Second leading-out terminal of electric current conversion station subelement.
Fault Isolation circuit is made up of the 6th full-control type semiconductor device, the second diode (led) module；6th full-control type is partly led
The colelctor electrode of body device is connected with the third terminal of Fault Isolation combinational circuit, the emitter stage of the 6th full-control type semiconductor device with
The negative electrode of the second diode connects, and the anode of the second diode is connected with the forth terminal of Fault Isolation combinational circuit.
6th terminal of described Fault Isolation combinational circuit is connected with the 8th terminal of Fault Isolation combinational circuit, fault every
The 7th terminal from combinational circuit is connected with the emitter stage of the 6th full-control type semiconductor device；The first of Fault Isolation combinational circuit
Terminal, Second terminal, the 5th terminal are vacant.After all full-control type semiconductor device lockings, when electric current is from described subelement
When one leading-out terminal flows into, the second capacitance group is positive to access circuit, and the second capacitance group both end voltage forms counter electromotive force, blocks stream
Enter electric current.When electric current flows into from described subelement second leading-out terminal, the second capacitance group is positive to access circuit, the second electric capacity
Group both end voltage forms counter electromotive force, blocks inflow current.
The first diode (led) module in described Fault Isolation combinational circuit and the second diode (led) module by a diode with
B resistance, and c electric capacity, and d inductance be composed in series together, a is the integer more than or equal to 1, and b, c, d are and are more than
Integer equal to 0.
Under normal operating condition, due to the reverse blocking voltage of diode, electric current does not flow through diode.When fault occurs
When, if the anode of diode from the first diode (led) module or the second diode (led) module for the electric current flows through to negative electrode, the
Inductance in one diode (led) module or the second diode (led) module, resistance and electric capacity all can seal in circuit.Resistance can be used for dissipating
Fault energy, inductance can be used for suppressing fault current climbing speed, and electric capacity charged by fault current, can increase seal in circuit etc.
Effect capacitance voltage, thus contribute to blocking fault current.
Flexible direct current transmission converter station brachium pontis is single by m described DC Line Fault isolated form flexible direct current transmission converter station
Unit and n semi-bridge type subelement cascade composition, m is the integer more than or equal to 1, and n is the integer more than or equal to 0.
Described six full-control type semiconductor device are composed in series it is also possible to by least one other by the IGBT of at least one
The wholly-controled device with anti-paralleled diode of type is composed in series, such as GTO, IGCT etc..
The first described capacitance group, the second capacitance group can be made up of one or more capacitor serial or parallel connections.Described
Capacitance group can additional bleeder resistance, the adjunct circuit unit such as pre-charge circuit.
Advantages of the present invention：
A., compared with half-bridge MMC subelement, possesses DC side troubleshooting capability；
B., compared with full-bridge MMC subelement, cost significantly reduces；
C., compared with full-bridge MMC subelement, loss is substantially reduced.
Brief description
The electrical block diagram of Fig. 1 present invention；
The circuit theory diagrams of Fig. 2 embodiment of the present invention 1；
The circuit theory diagrams of Fig. 3 embodiment of the present invention 2；
The circuit theory diagrams of Fig. 4 embodiment of the present invention 3；
The circuit theory diagrams of Fig. 5 embodiment of the present invention 4；
The circuit theory diagrams of Fig. 6 embodiment of the present invention 5；
Fig. 7 present invention and semi-bridge type subelement collectively constitute the embodiment schematic diagram of converter bridge arm；
The circuit theory diagrams of Fig. 8 embodiment of the present invention 7；
The circuit theory diagrams of Fig. 9 embodiment of the present invention 8；
The circuit theory diagrams of Figure 10 embodiment of the present invention 9；
The circuit theory diagrams of Figure 11 embodiment of the present invention 10.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment the invention will be further described.
As shown in figure 1, DC Line Fault isolated form flexible direct current transmission converter station subelement of the present invention is by the first capacitance group C1,
Second capacitance group C2, four full-control types semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit 7 form；First electricity
The positive pole 1 of appearance group C1 is connected with the colelctor electrode of the first full-control type semiconductor device T1；First full-control type semiconductor device T1 sends out
Emitter-base bandgap grading is connected with the colelctor electrode of the second full-control type semiconductor device T2, as the first wholly-controled device junction point 5；Second full-control type
The emitter stage of semiconductor device T2 is connected with the negative pole 2 of the first capacitance group C1；The positive pole 3 of the second capacitance group C2 and the 3rd full-control type
The colelctor electrode of semiconductor device T3 connects；The emitter stage of the 3rd full-control type semiconductor device T3 and the 4th full-control type semiconductor device
The colelctor electrode of T4 connects, as the second wholly-controled device junction point 6；The emitter stage and second of the 4th full-control type semiconductor device T4
The negative pole 4 of capacitance group C2 connects.
First leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, Fault Isolation group
The second leading-out terminal 12 closing circuit 7 is connected with the negative pole 2 of the first capacitance group C1, the 3rd extraction of Fault Isolation combinational circuit 7
Terminal 13 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 and the second capacitance group
The negative pole 4 of C2 connects, and the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first wholly-controled device junction point 5, therefore
Phragma is connected with the second wholly-controled device junction point 6 from the 5th leading-out terminal 16 of combinational circuit 7.Fault Isolation combinational circuit 7
The 7th terminal 17 as DC Line Fault isolated form flexible direct current transmission converter station subelement the first leading-out terminal, Fault Isolation
8th terminal 18 of combinational circuit 7 is as the second exit of DC Line Fault isolated form flexible direct current transmission converter station subelement
Son.
Embodiment 1
Fig. 2 show the specific embodiment 1 of the present invention.As shown in Fig. 2 the DC Line Fault isolated form of the embodiment of the present invention 1
Flexible direct current transmission converter station subelement includes：First capacitance group C1, the second capacitance group C2, four full-control type semiconductor device
T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows：
The positive pole 1 of the first capacitance group C1 is connected with the colelctor electrode of the first full-control type semiconductor device T1；First full-control type half
The emitter stage of conductor device T1 is connected with the colelctor electrode of the second full-control type semiconductor device T2, connects as the first wholly-controled device
Point 5；The emitter stage of the second full-control type semiconductor device T2 is connected with the negative pole 2 of the first capacitance group C1；Second capacitance group C2 is just
Pole 3 is connected with the colelctor electrode of the 3rd full-control type semiconductor device T3；The emitter stage and the 4th of the 3rd full-control type semiconductor device T3
The colelctor electrode of full-control type semiconductor device T4 connects, as the second wholly-controled device junction point 6；4th full-control type semiconductor device
The emitter stage of T4 is connected with the negative pole 4 of the second capacitance group C2.
First leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, Fault Isolation group
The second leading-out terminal 12 closing circuit 7 is connected with the negative pole 2 of the first capacitance group C1, the 3rd extraction of Fault Isolation combinational circuit 7
Terminal 13 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 and the second capacitance group
The negative pole 4 of C2 connects, and the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first wholly-controled device junction point 5, therefore
Phragma is connected with the second wholly-controled device junction point 6 from the 5th leading-out terminal 16 of combinational circuit 7.Fault Isolation combinational circuit 7
The 7th terminal 17 as DC Line Fault isolated form flexible direct current transmission converter station subelement the first leading-out terminal, Fault Isolation
8th terminal 18 of combinational circuit 7 is as the second exit of DC Line Fault isolated form flexible direct current transmission converter station subelement
Son.
Described Fault Isolation combinational circuit 7 is by the 5th full-control type semiconductor device T5, the 6th full-control type semiconductor device
T6, the first diode (led) module D1, the second diode (led) module D2 composition.The negative electrode of the first diode (led) module D1 is combined with Fault Isolation
The first terminal 11 of circuit 7 connects, the colelctor electrode of the anode of the first diode (led) module D1 and the 5th full-control type semiconductor device T5
19 connections, the emitter stage of the 5th full-control type semiconductor device T5 is connected with the Second terminal 12 of Fault Isolation combinational circuit 7, and the 6th
The colelctor electrode of full-control type semiconductor device T6 is connected with the third terminal 13 of Fault Isolation combinational circuit 7, and the 6th full-control type is partly led
The emitter stage 20 of body device T6 is connected with the negative electrode of the second diode (led) module D2, the anode of the second diode (led) module D2 and fault every
Forth terminal 14 from combinational circuit 7 connects.The emitter stage 20 of the 6th full-control type semiconductor device T6 is partly led with the 5th full-control type
The colelctor electrode 19 of body device T5 connects.5th terminal 15 and the 7th of Fault Isolation combinational circuit 7 of Fault Isolation combinational circuit 7
Terminal 17 connects, and the 6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.
Embodiment 2
Fig. 3 show the specific embodiment 2 of the present invention.As shown in figure 3, the DC Line Fault isolated form of the embodiment of the present invention 2
Flexible direct current transmission converter station subelement includes：First capacitance group C1, the second capacitance group C2, four full-control type semiconductor device
T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows：
The positive pole 1 of the first capacitance group C1 is connected with the colelctor electrode of the first full-control type semiconductor device T1；First full-control type half
The emitter stage of conductor device T1 is connected with the colelctor electrode of the second full-control type semiconductor device T2, connects as the first wholly-controled device
Point 5；The emitter stage of the second full-control type semiconductor device T2 is connected with the negative pole 2 of the first capacitance group C1；Second capacitance group C2 is just
Pole 3 is connected with the colelctor electrode of the 3rd full-control type semiconductor device T3；The emitter stage and the 4th of the 3rd full-control type semiconductor device T3
The colelctor electrode of full-control type semiconductor device T4 connects, as the second wholly-controled device junction point 6；4th full-control type semiconductor device
The emitter stage of T4 is connected with the negative pole 4 of the second capacitance group C2.
First leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, Fault Isolation group
The second leading-out terminal 12 closing circuit 7 is connected with the negative pole 2 of the first capacitance group C1, the 3rd extraction of Fault Isolation combinational circuit 7
Terminal 13 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 and the second capacitance group
The negative pole 4 of C2 connects, and the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first wholly-controled device junction point 5, therefore
Phragma is connected with the second wholly-controled device junction point 6 from the 5th leading-out terminal 16 of combinational circuit 7.Fault Isolation combinational circuit 7
The 7th terminal 17 as DC Line Fault isolated form flexible direct current transmission converter station subelement the first leading-out terminal, Fault Isolation
8th terminal 18 of combinational circuit 7 is as the second exit of DC Line Fault isolated form flexible direct current transmission converter station subelement
Son.
Described Fault Isolation combinational circuit 7 is made up of the 6th full-control type semiconductor device T6, the first diode (led) module D1.
The emitter stage of the 6th full-control type semiconductor device T6 is connected with the 5th terminal 15 of Fault Isolation combinational circuit 7, the 6th full-control type
The colelctor electrode of semiconductor device T6 is connected with the third terminal 13 of Fault Isolation combinational circuit 7.The moon of first diode (led) module D1
Pole is connected with the first terminal 11 of Fault Isolation combinational circuit 7, and the anode of the first diode (led) module D1 combines electricity with Fault Isolation
The forth terminal 14 on road 7 connects.The first terminal 11 of Fault Isolation combinational circuit 7 and the 7th end of Fault Isolation combinational circuit 7
Son 17 connection, the 6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.The of Fault Isolation combinational circuit 7
Two-terminal 12 is vacant.
Embodiment 3
Fig. 4 show the specific embodiment 3 of the present invention.As shown in figure 4, the DC Line Fault isolated form of the embodiment of the present invention 3
Flexible direct current transmission converter station subelement includes：First capacitance group C1, the second capacitance group C2, four full-control type semiconductor device
T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows：
The positive pole 1 of the first capacitance group C1 is connected with the colelctor electrode of the first full-control type semiconductor device T1；First full-control type half
The emitter stage of conductor device T1 is connected with the colelctor electrode of the second full-control type semiconductor device T2, connects as the first wholly-controled device
Point 5；The emitter stage of the second full-control type semiconductor device T2 is connected with the negative pole 2 of the first capacitance group C1；Second capacitance group C2 is just
Pole 3 is connected with the colelctor electrode of the 3rd full-control type semiconductor device T3；The emitter stage and the 4th of the 3rd full-control type semiconductor device T3
The colelctor electrode of full-control type semiconductor device T4 connects, as the second wholly-controled device junction point 6；4th full-control type semiconductor device
The emitter stage of T4 is connected with the negative pole 4 of the second capacitance group C2.
First leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, Fault Isolation group
The second leading-out terminal 12 closing circuit 7 is connected with the negative pole 2 of the first capacitance group C1, the 3rd extraction of Fault Isolation combinational circuit 7
Terminal 13 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 and the second capacitance group
The negative pole 4 of C2 connects, and the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first wholly-controled device junction point 5, therefore
Phragma is connected with the second wholly-controled device junction point 6 from the 5th leading-out terminal 16 of combinational circuit 7.Fault Isolation combinational circuit 7
The 7th terminal 17 as DC Line Fault isolated form flexible direct current transmission converter station subelement the first leading-out terminal, Fault Isolation
8th terminal 18 of combinational circuit 7 is as the second exit of DC Line Fault isolated form flexible direct current transmission converter station subelement
Son.
Described Fault Isolation combinational circuit 7 is made up of the 5th full-control type semiconductor device T5, the second diode (led) module D2.
The emitter stage of the 5th full-control type semiconductor device T5 is connected with the Second terminal 12 of Fault Isolation combinational circuit 7, the 5th full-control type
The colelctor electrode of semiconductor device T6 is connected with the third terminal 13 of Fault Isolation combinational circuit 7.The moon of second diode (led) module D2
Pole is connected with the first terminal 11 of Fault Isolation combinational circuit 7, and the anode of the second diode (led) module D2 combines electricity with Fault Isolation
The forth terminal 14 on road 7 connects.5th terminal 15 of Fault Isolation combinational circuit 7 and the 7th end of Fault Isolation combinational circuit 7
Son 17 connection, the forth terminal 14 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.The of Fault Isolation combinational circuit 7
Three terminals 13 are vacant.
Embodiment 4
Fig. 5 show the specific embodiment 4 of the present invention.As shown in figure 5, the DC Line Fault isolated form of the embodiment of the present invention 4
Flexible direct current transmission converter station subelement includes：First capacitance group C1, two full-control types semiconductor device T1, T2, and fault
Isolation combinational circuit 7.Connected mode is as follows：
The positive pole 1 of the first capacitance group C1 is connected with the colelctor electrode of the first full-control type semiconductor device T1；First full-control type half
The emitter stage of conductor device T1 is connected with the colelctor electrode of the second full-control type semiconductor device T2, connects as the first wholly-controled device
Point 5；The emitter stage of the second full-control type semiconductor device T2 is connected with the negative pole 2 of the first capacitance group C1.
First leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, Fault Isolation group
The second leading-out terminal 12 closing circuit 7 is connected with the negative pole 2 of the first capacitance group C1, the 5th extraction of Fault Isolation combinational circuit 7
Terminal 15 is connected with the first wholly-controled device junction point 5.7th terminal 17 of Fault Isolation combinational circuit 7 as DC Line Fault every
First leading-out terminal of release flexible direct current transmission converter station subelement, the 8th terminal 18 conduct of Fault Isolation combinational circuit 7
Second leading-out terminal of DC Line Fault isolated form flexible direct current transmission converter station subelement.
Described Fault Isolation combinational circuit 7 is made up of the 5th full-control type semiconductor device T5, the first diode (led) module D1.
5th terminal 15 of Fault Isolation combinational circuit 7 is connected with the 7th terminal 17 of Fault Isolation combinational circuit 7, and Fault Isolation combines
8th terminal 18 of circuit 7 is connected with the colelctor electrode 19 of the 5th full-control type semiconductor device T5.The of Fault Isolation combinational circuit 7
Three terminals 13, forth terminal 14, the 6th terminal 16 are vacant.
Embodiment 5
Fig. 6 show the specific embodiment 5 of the present invention.As shown in fig. 6, the DC Line Fault isolated form of the embodiment of the present invention 5
Flexible direct current transmission converter station subelement includes：Second capacitance group C2, two full-control types semiconductor device T3, T4, and fault
Isolation combinational circuit 7.Connected mode is as follows：
The positive pole 3 of the second capacitance group C2 is connected with the colelctor electrode of the 3rd full-control type semiconductor device T3；3rd full-control type half
The emitter stage of conductor device T3 is connected with the colelctor electrode of the 4th full-control type semiconductor device T4, connects as the second wholly-controled device
Point 6；The emitter stage of the 4th full-control type semiconductor device T4 is connected with the negative pole 4 of the second capacitance group C2.
Three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, Fault Isolation group
The 4th leading-out terminal 14 closing circuit 7 is connected with the negative pole 4 of the second capacitance group C2, the 5th extraction of Fault Isolation combinational circuit 7
Terminal 16 is connected with the second wholly-controled device junction point 6.7th terminal 17 of Fault Isolation combinational circuit 7 as DC Line Fault every
First leading-out terminal of release flexible direct current transmission converter station subelement, the 8th terminal 18 conduct of Fault Isolation combinational circuit 7
Second leading-out terminal of DC Line Fault isolated form flexible direct current transmission converter station subelement.
Described Fault Isolation combinational circuit 7 is made up of the 6th full-control type semiconductor device T6, the second diode (led) module D2.
6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18 of Fault Isolation combinational circuit 7, and Fault Isolation combines
7th terminal 17 of circuit 7 is connected with the emitter stage 20 of the 6th full-control type semiconductor device T6.The of Fault Isolation combinational circuit 7
One terminal 11, Second terminal 12, the 5th terminal 15 are vacant.
Embodiment 6
Fig. 7 is the specific embodiment 6 of the present invention.As shown in fig. 7, the converter bridge arm of embodiment 6 is by m described direct current
Fault-isolation type flexible direct current transmission converter station subelement ISM1, ISM2 ... ISMm and n semi-bridge type subelement SM1, SM2 ...
SMn cascade composition.The first leading-out terminal conduct of the first DC Line Fault isolated form flexible direct current transmission converter station subelement ISM1
First leading-out terminal of brachium pontis, second exit of the first DC Line Fault isolated form flexible direct current transmission converter station subelement ISM1
Son is connected with first leading-out terminal of the second DC Line Fault isolated form flexible direct current transmission converter station subelement ISM2, with such
Push away, second leading-out terminal of m DC Line Fault isolated form flexible direct current transmission converter station subelement ISMm and the first semi-bridge type are sub
First leading-out terminal connection, second leading-out terminal of the first semi-bridge type subelement SM1 and the second semi-bridge type subelement of cell S M1
First leading-out terminal of SM2 connects, remaining semi-bridge type subelement connected mode by that analogy, the of the n-th semi-bridge type subelement SMn
Two leading-out terminals are connected with one end of inductance L, and the other end of inductance L is as the second leading-out terminal of brachium pontis.Wherein m be more than etc.
In 1 integer, n is the integer more than or equal to 0.
Embodiment 7
Fig. 8 is embodiments of the invention 7, and the second diode (led) module in Fig. 8 is by a diode 31 and an electric capacity 32
It is composed in series.
Embodiment 8
Fig. 9 is embodiments of the invention 8, and the second diode (led) module in Fig. 9 is by a diode 31 and an electric capacity 32
It is composed in series with a resistance 33.
Embodiment 9
Figure 10 is embodiments of the invention 9, and the second diode (led) module in Figure 10 is by a diode 31 and a resistance
33 are composed in series.
Embodiment 10
Figure 11 is embodiments of the invention 10, and the second diode (led) module in Figure 10 is by a diode 31 and an electric capacity
32 are composed in series with an inductance with a resistance 33.
Claims (7)
1. a kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology it is characterised in that：Described direct current event
Phragma release flexible direct current transmission converter station subelement is by the first capacitance group (C1), the second capacitance group (C2), four full-control types half
Conductor device (T1, T2, T3, T4), and Fault Isolation combinational circuit (7) composition；The positive pole (1) of the first capacitance group (C1) and the
The colelctor electrode of one full-control type semiconductor device (T1) connects；The emitter stage of the first full-control type semiconductor device (T1) is controlled entirely with second
The colelctor electrode of type semiconductor device (T2) connects, as the first wholly-controled device junction point (5)；Second full-control type semiconductor device
(T2) emitter stage is connected with the negative pole (2) of the first capacitance group (C1)；The positive pole (3) of the second capacitance group (C2) and the 3rd full-control type
The colelctor electrode of semiconductor device (T3) connects；The emitter stage of the 3rd full-control type semiconductor device (T3) and the 4th full-control type quasiconductor
The colelctor electrode of device (T4) connects, as the second wholly-controled device junction point (6)；4th full-control type semiconductor device (T4) send out
Emitter-base bandgap grading is connected with the negative pole (4) of the second capacitance group (C2)；
First leading-out terminal (11) of described Fault Isolation combinational circuit (7) is connected with the positive pole (1) of the first capacitance group (C1), therefore
Phragma is connected with the negative pole (2) of the first capacitance group (C1) from second leading-out terminal (12) of combinational circuit (7), and Fault Isolation combines
Three terminal (13) of circuit (7) is connected with the positive pole (3) of the second capacitance group (C2), Fault Isolation combinational circuit (7)
4th leading-out terminal (14) is connected with the negative pole (4) of the second capacitance group (C2), the 5th exit of Fault Isolation combinational circuit (7)
Sub (15) are connected with the first wholly-controled device junction point (5), the 6th leading-out terminal (16) of Fault Isolation combinational circuit (7) and the
Two wholly-controled device junction points (6) connect；7th terminal (17) of Fault Isolation combinational circuit (7) is as DC Line Fault isolated form
First leading-out terminal of flexible direct current transmission converter station subelement, the 8th terminal (18) conduct of Fault Isolation combinational circuit (7)
Second leading-out terminal of DC Line Fault isolated form flexible direct current transmission converter station subelement；
Described Fault Isolation combinational circuit (7) is by the 5th full-control type semiconductor device (T5), the 6th full-control type semiconductor device
(T6), the first diode (led) module (D1), and the second diode (led) module (D2) composition；The negative electrode of the first diode (led) module (D1) with
The first terminal (11) of Fault Isolation combinational circuit (7) connects, and the anode of the first diode (led) module (D1) and the 5th full-control type are partly
The colelctor electrode (19) of conductor device (T5) connects, and the emitter stage of the 5th full-control type semiconductor device (T5) combines electricity with Fault Isolation
Second terminal (12) connection, the colelctor electrode of the 6th full-control type semiconductor device (T6) and the Fault Isolation combinational circuit (7) on road (7)
Third terminal (13) connect, the emitter stage (20) of the 6th full-control type semiconductor device (T6) and the second diode (led) module (D2)
Negative electrode connects, and the anode of the second diode (led) module (D2) is connected with the forth terminal (14) of Fault Isolation combinational circuit (7)；6th
The emitter stage (20) of full-control type semiconductor device (T6) is connected with the colelctor electrode (19) of the 5th full-control type semiconductor device (T5)；Therefore
Phragma is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7) from the 5th terminal (15) of combinational circuit (7), fault every
The 6th terminal (16) from combinational circuit (7) is connected with the 8th terminal (18).
2. a kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology it is characterised in that：Described direct current event
Phragma release flexible direct current transmission converter station subelement is by the first capacitance group (C1), the second capacitance group (C2), four full-control types half
Conductor device (T1, T2, T3, T4), and Fault Isolation combinational circuit (7) composition；The positive pole (1) of the first capacitance group (C1) and the
The colelctor electrode of one full-control type semiconductor device (T1) connects；The emitter stage of the first full-control type semiconductor device (T1) is controlled entirely with second
The colelctor electrode of type semiconductor device (T2) connects, as the first wholly-controled device junction point (5)；Second full-control type semiconductor device
(T2) emitter stage is connected with the negative pole (2) of the first capacitance group (C1)；The positive pole (3) of the second capacitance group (C2) and the 3rd full-control type
The colelctor electrode of semiconductor device (T3) connects；The emitter stage of the 3rd full-control type semiconductor device (T3) and the 4th full-control type quasiconductor
The colelctor electrode of device (T4) connects, as the second wholly-controled device junction point (6)；4th full-control type semiconductor device (T4) send out
Emitter-base bandgap grading is connected with the negative pole (4) of the second capacitance group (C2)；
First leading-out terminal (11) of described Fault Isolation combinational circuit (7) is connected with the positive pole (1) of the first capacitance group (C1), therefore
Phragma is connected with the negative pole (2) of the first capacitance group (C1) from second leading-out terminal (12) of combinational circuit (7), and Fault Isolation combines
Three terminal (13) of circuit (7) is connected with the positive pole (3) of the second capacitance group (C2), Fault Isolation combinational circuit (7)
4th leading-out terminal (14) is connected with the negative pole (4) of the second capacitance group (C2), the 5th exit of Fault Isolation combinational circuit (7)
Sub (15) are connected with the first wholly-controled device junction point (5), the 6th leading-out terminal (16) of Fault Isolation combinational circuit (7) and the
Two wholly-controled device junction points (6) connect；7th terminal (17) of Fault Isolation combinational circuit (7) is as DC Line Fault isolated form
First leading-out terminal of flexible direct current transmission converter station subelement, the 8th terminal (18) conduct of Fault Isolation combinational circuit (7)
Second leading-out terminal of DC Line Fault isolated form flexible direct current transmission converter station subelement；
Described Fault Isolation combinational circuit (7) is by the 6th full-control type semiconductor device (T6) and the first diode (led) module (D1) group
Become；The emitter stage of the 6th full-control type semiconductor device (T6) is connected with the 5th terminal (15) of Fault Isolation combinational circuit (7), the
The colelctor electrode of six full-control type semiconductor device (T6) is connected with the third terminal (13) of Fault Isolation combinational circuit (7)；One or two
The negative electrode of pole pipe module (D1) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), the first diode (led) module (D1)
Anode be connected with the forth terminal (14) of Fault Isolation combinational circuit (7)；The first terminal of Fault Isolation combinational circuit (7)
(11) it is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), the 6th terminal (16) of Fault Isolation combinational circuit (7)
It is connected with the 8th terminal (18)；The Second terminal (12) of Fault Isolation combinational circuit (7) is vacant.
3. a kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology it is characterised in that：Described direct current event
Phragma release flexible direct current transmission converter station subelement is by the first capacitance group (C1), the second capacitance group (C2), four full-control types half
Conductor device (T1, T2, T3, T4), and Fault Isolation combinational circuit (7) composition；The positive pole (1) of the first capacitance group (C1) and the
The colelctor electrode of one full-control type semiconductor device (T1) connects；The emitter stage of the first full-control type semiconductor device (T1) is controlled entirely with second
The colelctor electrode of type semiconductor device (T2) connects, as the first wholly-controled device junction point (5)；Second full-control type semiconductor device
(T2) emitter stage is connected with the negative pole (2) of the first capacitance group (C1)；The positive pole (3) of the second capacitance group (C2) and the 3rd full-control type
The colelctor electrode of semiconductor device (T3) connects；The emitter stage of the 3rd full-control type semiconductor device (T3) and the 4th full-control type quasiconductor
The colelctor electrode of device (T4) connects, as the second wholly-controled device junction point (6)；4th full-control type semiconductor device (T4) send out
Emitter-base bandgap grading is connected with the negative pole (4) of the second capacitance group (C2)；
First leading-out terminal (11) of described Fault Isolation combinational circuit (7) is connected with the positive pole (1) of the first capacitance group (C1), therefore
Phragma is connected with the negative pole (2) of the first capacitance group (C1) from second leading-out terminal (12) of combinational circuit (7), and Fault Isolation combines
Three terminal (13) of circuit (7) is connected with the positive pole (3) of the second capacitance group (C2), Fault Isolation combinational circuit (7)
4th leading-out terminal (14) is connected with the negative pole (4) of the second capacitance group (C2), the 5th exit of Fault Isolation combinational circuit (7)
Sub (15) are connected with the first wholly-controled device junction point (5), the 6th leading-out terminal (16) of Fault Isolation combinational circuit (7) and the
Two wholly-controled device junction points (6) connect；7th terminal (17) of Fault Isolation combinational circuit (7) is as DC Line Fault isolated form
First leading-out terminal of flexible direct current transmission converter station subelement, the 8th terminal (18) conduct of Fault Isolation combinational circuit (7)
Second leading-out terminal of DC Line Fault isolated form flexible direct current transmission converter station subelement；
Described Fault Isolation combinational circuit (7) is by the 5th full-control type semiconductor device (T5), the second diode (led) module (D2) group
Become；The emitter stage of the 5th full-control type semiconductor device (T5) is connected with the Second terminal (12) of Fault Isolation combinational circuit (7), the
The colelctor electrode of five full-control type semiconductor device (T6) is connected with the third terminal (13) of Fault Isolation combinational circuit (7)；Two or two
The negative electrode of pole pipe module (D2) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), the second diode (led) module (D2)
Anode be connected with the forth terminal (14) of Fault Isolation combinational circuit (7)；5th terminal of Fault Isolation combinational circuit (7)
(15) it is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), the forth terminal (14) of Fault Isolation combinational circuit (7)
It is connected with the 8th terminal (18)；The third terminal (13) of Fault Isolation combinational circuit (7) is vacant.
4., according to the DC Line Fault isolated form flexible direct current transmission converter station subelement topology described in claim 1, its feature exists
In：The first diode (led) module (D1) in described Fault Isolation combinational circuit (7) and the second diode (led) module (D2) are by a two
Pole pipe and b resistance, and c electric capacity, and d inductance be composed in series together, a is the integer more than or equal to 1, and b, c, d are equal
It is the integer more than or equal to 0.
5., according to the DC Line Fault isolated form flexible direct current transmission converter station subelement topology described in claim 2, its feature exists
In：The first diode (led) module (D1) in described Fault Isolation combinational circuit (7) is by a diode and b resistance, and c
Individual electric capacity, and d inductance be composed in series together, a is the integer more than or equal to 1, and b, c, d are the integer more than or equal to 0.
6., according to the DC Line Fault isolated form flexible direct current transmission converter station subelement topology described in claim 3, its feature exists
In：The second diode (led) module (D2) in described Fault Isolation combinational circuit (7) is by a diode and b resistance, and c
Individual electric capacity, and d inductance be composed in series together, a is the integer more than or equal to 1, and b, c, d are the integer more than or equal to 0.
7. according to the DC Line Fault isolated form flexible direct current transmission converter station subelement topology described in claim 1 or 2 or 3, its
It is characterised by：By m described DC Line Fault isolated form flexible direct current transmission converter station subelement and n semi-bridge type subelement level
Joint group becomes flexible direct current transmission converter station brachium pontis, and m is the integer more than or equal to 1, and n is the integer more than or equal to 0.
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| CN201410243027.3A CN104037733B (en) | 2014-06-03 | 2014-06-03 | A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology |
| PCT/CN2014/086070 WO2015161610A1 (en) | 2014-04-25 | 2014-09-05 | Direct-current fault isolation type subunit and bridge arm topology structure for flexible direct-current power transmission converter station |
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| CN201410243027.3A CN104037733B (en) | 2014-06-03 | 2014-06-03 | A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology |
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| CN104267615B (en) * | 2014-09-17 | 2017-01-18 | 华南理工大学 | MMC flexible direct-current system |
| CN105720569A (en) * | 2014-12-05 | 2016-06-29 | 中国科学院电工研究所 | Flexible direct current transmission converter station topology with trouble isolation capability |
| CN104617783A (en) * | 2014-12-29 | 2015-05-13 | 天津大学 | Improved structure of MMC (Modular Multilevel Converter) current converter with direct-current fault current-limiting capacity and isolating method |
| CN104617757A (en) * | 2015-01-30 | 2015-05-13 | 天津大学 | Improved overvoltage preventing type MMC current converter structure having direct-current fault current-limiting capacity |
| CN104638615A (en) * | 2015-02-16 | 2015-05-20 | 天津大学 | Modular multilevel converter with direct-current fault isolation function and submodule thereof |
| CN104821734B (en) * | 2015-04-30 | 2017-10-20 | 华南理工大学 | A kind of submodular circuits for block combiner multi-level converter |
| CN104993683B (en) * | 2015-07-15 | 2018-06-19 | 南方电网科学研究院有限责任公司 | Modular multilevel converter submodule circuit |
| CN106998138B (en) * | 2016-01-25 | 2019-07-05 | 华北电力大学 | Bidirectional DC-DC converter without Pressure and Control |
| CN106787882B (en) * | 2017-01-18 | 2023-06-23 | 国家电网公司 | MMC submodule capable of improving transient overvoltage tolerance |
| CN107196539B (en) * | 2017-06-23 | 2019-10-11 | 西安交通大学 | A kind of MMC zero DC voltage fault traversing control method under bridge arm parameter unbalance state |
| CN108900103A (en) * | 2018-08-23 | 2018-11-27 | 中国能源建设集团广东省电力设计研究院有限公司 | The converter power module and inverter for having DC Line Fault self-cleaning ability |
| CN114865684B (en) * | 2022-07-07 | 2022-09-20 | 中国长江三峡集团有限公司 | Control circuit and control method of flexible direct current transmission system |
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| CN102420533B (en) * | 2011-12-04 | 2013-12-25 | 中国科学院电工研究所 | Hybrid multilevel current conversion circuit topology structure and control method thereof |
| CN103236788B (en) * | 2013-01-14 | 2015-03-25 | 燕山大学 | Bootstrap dual-input direct current converter |
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