CN104037075A - Thermal-resistance-processed silicon carbide back metal thickening method - Google Patents
Thermal-resistance-processed silicon carbide back metal thickening method Download PDFInfo
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- CN104037075A CN104037075A CN201410259946.XA CN201410259946A CN104037075A CN 104037075 A CN104037075 A CN 104037075A CN 201410259946 A CN201410259946 A CN 201410259946A CN 104037075 A CN104037075 A CN 104037075A
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- metal
- thickening
- sic
- carborundum
- high temperature
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- 239000002184 metal Substances 0.000 title claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 70
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000008719 thickening Effects 0.000 title claims abstract description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims description 3
- 238000010008 shearing Methods 0.000 claims description 3
- 229910005544 NiAg Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000004151 rapid thermal annealing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009740 moulding (composite fabrication) Methods 0.000 abstract 1
- 238000004062 sedimentation Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a thermal-resistance-processed silicon carbide back metal thickening method. The method comprises the following steps of 1) forming a metal layer on the back surface of a SiC wafer through evaporation or sputtering, and forming an ohmic contact after an annealing process; forming a stopping metal layer on the back surface ohmic contact through evaporation or sputtering; 3) applying a layer of resin onto the front surface of the SiC wafer, heating the SiC wafer in a drying oven to solidify the resin; 4) performing coating protection, wet HF corrosion, cleaning and drying on the front surface of the SiC wafer; 5) forming thickening metal on the back surface of the SiC wafer through sedimentation; 6) performing photoresist removal and scribing, and after a chip is sintered onto a carrier, performing shear assessment. The thermal-resistance-processed silicon carbide back metal thickening method has the advantages of solving the problem of infirmness of the back surface metal of a high-temperature-processed SiC power device, and by means of the stopping metal layer sputtered onto the back surface ohmic contact, which can be diffused to combine with C on the surface of the ohmic contact after the high-temperature processing process, avoiding forming a dissociative C layer and guaranteeing the firmness and reliability of the back surface thickening metal.
Description
Technical field
What the present invention relates to is a kind of back metal thickening method, and what be specifically related to is a kind of carborundum back metal thickening method of high temperature resistant processing.
Background technology
Carborundum (SiC) material because thering is large energy gap (3.2eV), high critical breakdown electric field (reaches 4 × 10
6more than V/cm), high electron saturation velocities (2 × 10
7and the performance such as high thermal conductivity (4.9W/cm.K) cm/s), under the conditions of work such as high temperature, high-power, anti-irradiation, there is obvious advantage, have broad application prospects in fields such as communication, traffic, the energy.
In silicon carbide power device, conventionally adopt nickel (Ni) as metal ohmic contact, in the carborundum disk surfaces extension that a floor height mixes of growing, after precipitation metallic nickel, through up to 1000
oafter the high annealing of C, form good ohmic contact, it connects specific contact resistivity rate can reach 1 Х 10
-6 ?.cm
2.But, in the ohmic contact forming process of carborundum, due to nickel and silicon carbide reactor formation nisiloy compound (Ni
xsi
y), will separate out carbon (C), in ohm annealing process, because the high annealing time is shorter, carbon is not also diffused into surface, due to diffusion coefficient and time and the temperature relation in direct ratio of carbon, under the higher temperatures long period, this carbon will be diffused into ohmic contact surface, forms free carbon-coating, at this time carry out again metal process for upsetting, very poor of the adhesiveness that can cause thickening metal.
For appeal problem, conventionally can remove the carbon that the back side separates out by wet etching and dry etching, the strong acid meeting corrosion device front that wherein wet etching is used, dry method is carved the carborundum back side, can pollute silicon carbide wafer and etching apparatus cavity, and this two method all can be damaged the electrical property of silicon carbide device, and produce reliability hidden danger, therefore, need not remove carbon-coating, the carborundum back metal process for upsetting of back metal good adhesion exploitation is simultaneously very important.
Summary of the invention
The carborundum back metal thickening method of a kind of high temperature resistant processing that the present invention proposes, its objective is and solve the existing above-mentioned deficiency of existing technique, hold onto the carbon dissociating out after high-temperature process by the method for alloy, when not affecting device electric property, improve the silicon carbide device back side thickening adhesiveness of metal and the reliability of device.
Technical solution of the present invention comprises the following steps:
1), in the evaporation of SiC chip back surface or sputter layer of metal, after annealing, form ohmic contact;
2) in ohmic contact, evaporate or sputter one deck barrier metal overleaf;
3) be coated with the resin of one deck for high voltage protective at SiC front wafer surface, solidify through baking oven high-temperature baking;
4) SiC front wafer surface Coating glue protect, wet method HF corrosion, cleans and dries;
5) at SiC chip back surface precipitation thickening metal;
6) scribing of removing photoresist, does shearing force assessment.
Beneficial effect of the present invention: the method has solved by carborundum back side ohmic contact after high-temperature process and separated out the metal adhesion problem that free carbon-coating causes, do not need to adopt wet etching or dry etch process simultaneously, technique is simple, pollutes without technique, has reduced process costs; The device that adopts the carborundum back metal thickening method development of this high temperature resistant processing, electric property and reliability are good, back metal good adhesion and high temperature resistant processing.
Brief description of the drawings
Accompanying drawing 1 is SiC disk schematic diagram.
Accompanying drawing 2 is that the generalized section after ohmic contact has been done at the SiC disk back side.
Accompanying drawing 3 is to precipitate the generalized section after one deck barrier metal in the ohmic contact of the SiC disk back side.
Accompanying drawing 4 is the positive generalized sections that are coated with after one deck resin of SiC disk.
Accompanying drawing 5 is the generalized sections after the Coating glue protect of SiC disk front.
Accompanying drawing 6 is that back metal is thickeied later generalized section.
Embodiment
The carborundum back metal thickening method of high temperature resistant processing, the method comprises the following steps:
1), in the evaporation of SiC chip back surface or sputter layer of metal, after annealing, form ohmic contact;
2) in ohmic contact, evaporate or sputter one deck barrier metal overleaf;
3) be coated with one deck resin, baking oven high-temperature baking cured resin at SiC front wafer surface;
4) SiC front wafer surface Coating glue protect, wet method HF corrosion, cleans and dries;
5) at SiC chip back surface precipitation thickening metal;
6) scribing of removing photoresist, chip does shearing force assessment after being sintered on carrier.
The described Ni metal at the evaporation of SiC chip back surface or sputter layer of metal 100nm, 1000
oafter C annealing 10min, form good ohmic contact; The Ni metal of 100nm, in high temperature rapid thermal annealing, all reacts with SiC, and the Ni that top layer does not have and SiC reacts is also dense, has stopped separating out of carbon, has the carbon of blackout to separate out, as shown in Figure 2 so now do not observe the back side.
In described ohmic contact overleaf, sputter one deck barrier metal comprises W, Ti, and WTi, WiTiAuTi, thickness is 10nm～300nm, adopts the mode of evaporation or sputter to form, as shown in Figure 3.
Described is the thick resin bed of 4 μ m at SiC front wafer surface painting one deck resin, and baking oven heating-up temperature is since 25 DEG C, and multistage 2h is heated to 400 DEG C, then, after 400 DEG C of constant temperature 2h, cools to room temperature; After time high-temperature process, carbon has diffused into barrier metal layer, is combined with W, Ti or its alloy, has prevented the diffusion of carbon to metal surface, avoids forming on surface free carbon-coating, the adhesiveness of impact thickening metal, as shown in Figure 4.
Described SiC front wafer surface Coating glue protect, wet method HF corrosion, is that quality matched proportion density is 20% HF% processing 1min, as shown in Figure 5.
Described is after step 4) at SiC chip back surface precipitation thickening metal, the thickening metal of back side evaporation, sputter or plating 1 μ m～6 μ m, and back side thickening metal comprises Au, Ag, NiAu, NiAg, TiNiAu, TiNiAg; Scribing after removing photoresist, as shown in Figure 6.
Described back side ohmic metal also comprises Ni, Ti, and Gr, Mo, W and alloy thereof, annealing temperature is 600
oc～1100
oc.
Sputter one deck barrier metal on the ohm of the described back side, this barrier metal comprises W, Ti, WTi, WiTiAuTi, thickness is 10nm～300nm, adopts the mode of evaporation or sputter to form.
Described at SiC front wafer surface painting one deck resin, resin bed is benzocyclobutene (BCB) or polyimides, and baking oven baking temperature is 100
oc～500
oc, baking time is 1h～12h.
The quality matched proportion density of described HF is 5%～10%, or 30%～50%, the time of processing is 10s～9min.
Claims (10)
1. the carborundum back metal thickening method of high temperature resistant processing, the method comprises the following steps:
1), in the evaporation of SiC chip back surface or sputter layer of metal, after annealing, form ohmic contact;
2) in ohmic contact, evaporate or sputter one deck barrier metal overleaf;
3) be coated with one deck resin, baking oven high-temperature baking cured resin at SiC front wafer surface;
4) SiC front wafer surface Coating glue protect, wet method HF corrosion, cleans and dries;
5) at SiC chip back surface precipitation thickening metal;
6) scribing of removing photoresist, chip does shearing force assessment after being sintered on carrier.
2. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, is characterized in that the described Ni metal at the evaporation of SiC chip back surface or sputter layer of metal 100nm, 1000
oafter C annealing 10min, form good ohmic contact; The Ni metal of 100nm, in high temperature rapid thermal annealing, all reacts with SiC, and the Ni that top layer does not have and SiC reacts is also dense, has stopped separating out of carbon, has the carbon of blackout to separate out so now do not observe the back side.
3. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, described in it is characterized in that, sputter one deck barrier metal comprises W, Ti in ohmic contact overleaf, WTi, WiTiAuTi, thickness is 10nm～300nm, adopts the mode of evaporation or sputter to form.
4. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, it is characterized in that described is the thick resin bed of 4 μ m at SiC front wafer surface painting one deck resin, baking oven heating-up temperature is since 25 DEG C, multistage 2h is heated to 400 DEG C, then after 400 DEG C of constant temperature 2h, cool to room temperature; After time high-temperature process, carbon has diffused into barrier metal layer, is combined with W, Ti or its alloy, has prevented the diffusion of carbon to metal surface, avoids forming on surface free carbon-coating, the adhesiveness of impact thickening metal.
5. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, is characterized in that described SiC front wafer surface Coating glue protect, and wet method HF corrosion is that quality matched proportion density is 20% HF% processing 1min.
6. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, it is characterized in that described is after step 4) at SiC chip back surface precipitation thickening metal, the thickening metal of back side evaporation, sputter or plating 1 μ m～6 μ m, back side thickening metal comprises Au, Ag, NiAu, NiAg, TiNiAu, TiNiAg; Scribing after removing photoresist.
7. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, is characterized in that described back side ohmic metal also comprises Ni, Ti, and Gr, Mo, W and alloy thereof, annealing temperature is 600
oc～1100
oc.
8. the carborundum back metal thickening method of high temperature resistant processing according to claim 1, is characterized in that sputter one deck barrier metal on the ohm of the described back side, and this barrier metal comprises W, Ti, WTi, WiTiAuTi, thickness is 10nm～300nm, adopts the mode of evaporation or sputter to form.
9. the carborundum back metal thickening method of high temperature resistant processing according to claim 4, is coated with one deck resin at SiC front wafer surface described in it is characterized in that, resin bed is benzocyclobutene or polyimides, and baking oven baking temperature is 100
oc～500
oc, baking time is 1h～12h.
10. the carborundum back metal thickening method of high temperature resistant processing according to claim 5, the quality matched proportion density that it is characterized in that described HF is 5%～10%, or 30%～50%, the time of processing is 10s～9min.
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|---|---|---|---|
| CN201410259946.XA CN104037075B (en) | 2014-06-12 | 2014-06-12 | The carborundum back metal thickening method of high temperature resistant process |
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| CN201410259946.XA CN104037075B (en) | 2014-06-12 | 2014-06-12 | The carborundum back metal thickening method of high temperature resistant process |
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| Publication Number | Publication Date |
|---|---|
| CN104037075A true CN104037075A (en) | 2014-09-10 |
| CN104037075B CN104037075B (en) | 2017-01-04 |
Family
ID=51467802
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826167A (en) * | 2015-01-23 | 2016-08-03 | 三菱电机株式会社 | Substrate for semiconductor device and method of manufacturing same |
| CN107331606A (en) * | 2017-05-09 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | The preparation method of SiC device back metal system |
| CN109830456A (en) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | The preparation method of method and power device that the back metal of power device thickeies |
| CN109994376A (en) * | 2017-12-30 | 2019-07-09 | 无锡华润微电子有限公司 | Ohmic contact structure formed in silicon carbide substrates and forming method thereof |
| CN113539800A (en) * | 2021-06-10 | 2021-10-22 | 上海积塔半导体有限公司 | Method for manufacturing semiconductor structure |
| CN113802184A (en) * | 2021-08-25 | 2021-12-17 | 东莞市天域半导体科技有限公司 | Method for quickly removing deposits on back of wafer in silicon carbide epitaxial process |
| CN118280824A (en) * | 2024-06-04 | 2024-07-02 | 无锡市查奥微电子科技有限公司 | Method for thickening metal after SiC ohmic contact |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| US20060273323A1 (en) * | 2005-06-07 | 2006-12-07 | Denso Corporation | Semiconductor device having SiC substrate and method for manufacturing the same |
| WO2011099338A1 (en) * | 2010-02-09 | 2011-08-18 | 昭和電工株式会社 | Semiconductor device and method for manufacturing semiconductor device |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| CN102768946A (en) * | 2012-07-05 | 2012-11-07 | 中国电子科技集团公司第五十五研究所 | Rapid annealing method for ohmic contact on back side of carborundum device |
| CN102800570A (en) * | 2011-05-27 | 2012-11-28 | 三菱电机株式会社 | Manufacturing method of silicon carbide semiconductor device |
| CN102931054A (en) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | Method for realizing annealing of P-type SiC material low-temperature ohmic alloy |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN103578960A (en) * | 2013-11-20 | 2014-02-12 | 中国科学院微电子研究所 | Method for preparing ohmic contact on back of SiC substrate |
-
2014
- 2014-06-12 CN CN201410259946.XA patent/CN104037075B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| US20060273323A1 (en) * | 2005-06-07 | 2006-12-07 | Denso Corporation | Semiconductor device having SiC substrate and method for manufacturing the same |
| WO2011099338A1 (en) * | 2010-02-09 | 2011-08-18 | 昭和電工株式会社 | Semiconductor device and method for manufacturing semiconductor device |
| CN102800570A (en) * | 2011-05-27 | 2012-11-28 | 三菱电机株式会社 | Manufacturing method of silicon carbide semiconductor device |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| CN102768946A (en) * | 2012-07-05 | 2012-11-07 | 中国电子科技集团公司第五十五研究所 | Rapid annealing method for ohmic contact on back side of carborundum device |
| CN102931054A (en) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | Method for realizing annealing of P-type SiC material low-temperature ohmic alloy |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN103578960A (en) * | 2013-11-20 | 2014-02-12 | 中国科学院微电子研究所 | Method for preparing ohmic contact on back of SiC substrate |
Cited By (15)
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|---|---|---|---|---|
| DE102016200883B4 (en) * | 2015-01-23 | 2020-01-30 | Mitsubishi Electric Corporation | Method of manufacturing a substrate for a semiconductor device |
| CN105826167A (en) * | 2015-01-23 | 2016-08-03 | 三菱电机株式会社 | Substrate for semiconductor device and method of manufacturing same |
| US9966264B2 (en) | 2015-01-23 | 2018-05-08 | Mitsubishi Electric Corporation | Substrate for semiconductor device and method of manufacturing the same |
| US10249500B2 (en) | 2015-01-23 | 2019-04-02 | Mitsubishi Electric Corporation | Method for manufacturing substrate for semiconductor device |
| CN105826167B (en) * | 2015-01-23 | 2020-03-13 | 三菱电机株式会社 | Substrate for semiconductor device and method for manufacturing the same |
| CN107331606A (en) * | 2017-05-09 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | The preparation method of SiC device back metal system |
| CN109994376A (en) * | 2017-12-30 | 2019-07-09 | 无锡华润微电子有限公司 | Ohmic contact structure formed in silicon carbide substrates and forming method thereof |
| CN109994376B (en) * | 2017-12-30 | 2021-10-15 | 无锡华润微电子有限公司 | Ohmic contact structure formed on silicon carbide substrate and forming method thereof |
| CN109830456A (en) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | The preparation method of method and power device that the back metal of power device thickeies |
| CN113539800A (en) * | 2021-06-10 | 2021-10-22 | 上海积塔半导体有限公司 | Method for manufacturing semiconductor structure |
| CN113539800B (en) * | 2021-06-10 | 2024-05-31 | 上海积塔半导体有限公司 | Method for preparing semiconductor structure |
| CN113802184A (en) * | 2021-08-25 | 2021-12-17 | 东莞市天域半导体科技有限公司 | Method for quickly removing deposits on back of wafer in silicon carbide epitaxial process |
| CN113802184B (en) * | 2021-08-25 | 2022-06-28 | 东莞市天域半导体科技有限公司 | Method for quickly removing deposits on back of wafer in silicon carbide epitaxial process |
| CN118280824A (en) * | 2024-06-04 | 2024-07-02 | 无锡市查奥微电子科技有限公司 | Method for thickening metal after SiC ohmic contact |
| CN118280824B (en) * | 2024-06-04 | 2024-10-01 | 无锡市查奥微电子科技有限公司 | Method for thickening metal after SiC ohmic contact |
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|---|---|
| CN104037075B (en) | 2017-01-04 |
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