CN104022219A - Nonvolatile memory for erasing once and reading repeatedly based on Al2O3 film - Google Patents
Nonvolatile memory for erasing once and reading repeatedly based on Al2O3 film Download PDFInfo
- Publication number
- CN104022219A CN104022219A CN201410289955.3A CN201410289955A CN104022219A CN 104022219 A CN104022219 A CN 104022219A CN 201410289955 A CN201410289955 A CN 201410289955A CN 104022219 A CN104022219 A CN 104022219A
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- China
- Prior art keywords
- film
- substrate
- conductive glass
- read
- write once
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052593 corundum Inorganic materials 0.000 title abstract 7
- 229910001845 yogo sapphire Inorganic materials 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 230000007704 transition Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OTIJDYHLLCTUJA-UHFFFAOYSA-N aluminum oxygen(2-) platinum(2+) Chemical compound [Pt+2].[O-2].[Al+3] OTIJDYHLLCTUJA-UHFFFAOYSA-N 0.000 description 1
- 230000002929 anti-fatigue Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Semiconductor Memories (AREA)
Abstract
The invention relates to the technical field of memory, and discloses a nonvolatile memory for erasing once and reading repeatedly based on an Al2O3 film. The nonvolatile memory comprises a substrate, an Al2O3 film and a Pt metal electrode, wherein the Al2O3 film is arranged on the substrate; the Pt metal electrode is arranged on the Al2O3 film; the substrate is made of ITO conductive glass. The structure of the memory is platinum-Al2O3 film-ITO conductive glass (Pt-Al2O3-ITO), wherein platinum and the ITO conductive glass act as electrodes; the Al2O3 film is prepared by a molecular beam epitaxy method. The film device provided by the invention has high reliability and performance consistency; the resistance ratio of the device at two states is about 104, and the device can act as the nonvolatile memory for erasing once and reading repeatedly.
Description
Technical field
The present invention relates to technical field of memory, more specifically, relate to a kind of repeatedly non-volatility memorizer of Write once and read of wiping.
Background technology
Having at present a kind of storage component part is that write-once repeatedly reads the storage component part of (write-once, read-many, WORM), and this storage component part can not rewrite.Be just can not change, wipe or override after data in memory write, this performance guarantee data have good reliability and fail safe, as document storage or permanent recording etc. all adopt this class storage component part.
Summary of the invention
In view of repeatedly read memory device of current write-once, the object of this invention is to provide a kind of repeatedly non-volatility memorizer of wiping Write once and read similarly with permanent storage record material.
For achieving the above object, technical scheme of the present invention is:
Based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, comprises substrate, Al
2o
3film and Pt metal electrode, Al
2o
3film is located on substrate, and Pt metal electrode is located at Al
2o
3on film, wherein substrate is that ITO electro-conductive glass is the substrate of material.
The structure of this memory is: platinum-aluminum oxide film-ITO electro-conductive glass (Pt-Al
2o
3-ITO), platinum and ITO electro-conductive glass do electrode.Aluminum oxide film is wherein prepared and is obtained by molecular beam epitaxy.Thin-film device prepared by the present invention has very high reliability and consistency of performance, and the resistance value ratio of device two states is about 104, can be used as and wipes repeatedly non-volatility memorizer use of Write once and read.
Described Pt metal electrode is multiple point electrodes.
Described Al
2o
3film is polycrystal film, forms Al by molecular beam epitaxy on ITO electro-conductive glass
2o
3film.
Above-mentioned employing molecular beam epitaxy preparation forms Al
2o
3the actual conditions of film is: make substrate taking ITO electro-conductive glass as material in room temperature, growth air pressure is controlled at 10
-3pa, by source radio frequency gas ions generator generation gas ions, evaporates aluminium atom; Aluminium atom and gas ions are interacted on the substrate surface taking ITO electro-conductive glass as material, generate Al
2o
3, growth time is 2 hours.
With write-once repeatedly read memory device compare, the present invention is by Pt/ Al
2o
3on/ITO memory, with voltage V, memory device being jumped from low resistance state is high resistance state.Memory device in high resistance state, is not subject to the impact of voltage swing by ultra-long time, effectively state is kept getting off, and realizes the ultra-long time storage of information and has accomplished to wipe Write once and read function repeatedly.
Brief description of the drawings
Fig. 1 is the repeatedly structural representation of non-volatility memorizer of wiping Write once and read of the present invention.
Fig. 2 is Pt/ Al of the present invention
2o
3/ ITO memory at voltage-2V to voltage is+volt-ampere characteristics of figure of 2V.
Fig. 3 is that the data of Pt//ITO memory of the present invention keep dynamics schematic diagram, after transition and transition first two state read with+0.2V voltage signal respectively.
Fig. 4 is Pt/ Al of the present invention
2o
3the data reading antifatigue degree schematic diagram of/ITO memory, after transition and transition first two state read with+0.2V voltage signal respectively.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but embodiments of the present invention are not limited to this.
As shown in Figure 1, the invention provides a kind of repeatedly non-volatility memorizer of Write once and read of wiping, comprising the substrate 1 taking ITO electro-conductive glass as material, be located at the Al on ITO electro-conductive glass
2o
3film 2, be located at Al
2o
3pt metal electrode 3 on film 2.Pt metal electrode 3 is multiple point electrodes.
In the present embodiment, Al
2o
3film 2 is polycrystal film, and the structure expression of this memory is: Pt/ Al
2o
3/ ITO.
In addition, the present invention polymorph A l that grows on the substrate 1 taking ITO electro-conductive glass as material by molecular beam epitaxy
2o
3film 2, is so more conducive to study Pt/ Al
2o
3the non-volatile holographic storage character of/ITO device.
Molecular beam epitaxy is prepared Al
2o
3the actual conditions of film 2 is: make substrate 1 taking ITO electro-conductive glass as material in room temperature, growth air pressure is controlled at 10-3Pa, uses O
2source RF plasma generator produces oxygen plasma, and to heat purity be 99.99% Al source metal to 950 DEG C, evaporates aluminium atom.Aluminium atom and oxygen plasma are interacted on substrate 1 surface taking ITO electro-conductive glass as material, generate Al
2o
3, growth time is 2 hours.
Be connected at Pt metal electrode 3 and external signal source positive pole, in the situation of substrate 1 ground connection taking ITO electro-conductive glass as material, in the time that additional forward voltage signal is about 1.4V, can be easy to make memory device is high-impedance state from low resistance state transition.After transition is high-impedance state, device remains on high-impedance state always, as shown in Figure 2.State after state and transition before transition can keep stable for a long time, and voltage signal that can use respectively+0.2V reads out, after transition and the resistance ratio of transition first two state be about 104, as shown in Figure 3.The voltage signal of use+0.2V is read the state after state and the transition before transition respectively, still can keep stable after repeatedly reading, and is about 104, as shown in Figure 4 after transition with the resistance ratio of transition first two state.
Above-described embodiments of the present invention, do not form limiting the scope of the present invention.Any amendment of having done within spiritual principles of the present invention, be equal to and replace and improvement etc., within all should being included in claim protection range of the present invention.
Claims (5)
1. one kind based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, is characterized in that, comprises substrate, Al
2o
3film and Pt metal electrode, Al
2o
3film is located on substrate, and Pt metal electrode is located at Al
2o
3on film, wherein substrate is that ITO electro-conductive glass is the substrate of material.
2. according to claim 1 based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, is characterized in that, described Pt metal electrode is point electrode.
3. according to claim 1 based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, is characterized in that described Al
2o
3film is polycrystal film.
4. according to claim 1 based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, is characterized in that, forms Al by molecular beam epitaxy on ITO electro-conductive glass
2o
3film.
5. according to claim 4 based on Al
2o
3the repeatedly non-volatility memorizer of wiping Write once and read of film, is characterized in that, adopts molecular beam epitaxy preparation to form Al
2o
3the actual conditions of film is: make substrate taking ITO electro-conductive glass as material in room temperature, growth air pressure is controlled at 10
-3pa, by source radio frequency gas ions generator generation gas ions, evaporates aluminium atom; Aluminium atom and gas ions are interacted on the substrate surface taking ITO electro-conductive glass as material, generate Al
2o
3, growth time is 2 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289955.3A CN104022219A (en) | 2014-06-26 | 2014-06-26 | Nonvolatile memory for erasing once and reading repeatedly based on Al2O3 film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289955.3A CN104022219A (en) | 2014-06-26 | 2014-06-26 | Nonvolatile memory for erasing once and reading repeatedly based on Al2O3 film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104022219A true CN104022219A (en) | 2014-09-03 |
Family
ID=51438872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410289955.3A Pending CN104022219A (en) | 2014-06-26 | 2014-06-26 | Nonvolatile memory for erasing once and reading repeatedly based on Al2O3 film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104022219A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681028A (en) * | 2017-10-24 | 2018-02-09 | 江门市奥伦德光电有限公司 | A kind of vertical stratification zno-based LED chip and preparation method thereof |
| CN111129296A (en) * | 2019-12-27 | 2020-05-08 | 广东工业大学 | One-time write-in multi-time read memory based on aluminum oxide film and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060087005A1 (en) * | 2004-09-29 | 2006-04-27 | Matrix Semiconductor, Inc. | Deposited semiconductor structure to minimize N-type dopant diffusion and method of making |
| CN102810635A (en) * | 2012-08-09 | 2012-12-05 | 清华大学 | Write once read many type storage device and manufacturing method thereof |
-
2014
- 2014-06-26 CN CN201410289955.3A patent/CN104022219A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060087005A1 (en) * | 2004-09-29 | 2006-04-27 | Matrix Semiconductor, Inc. | Deposited semiconductor structure to minimize N-type dopant diffusion and method of making |
| CN102810635A (en) * | 2012-08-09 | 2012-12-05 | 清华大学 | Write once read many type storage device and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| K.Y.LEE等: "Molecular beam epitaxy grown template for subsequent atomic layer deposition of high-k dielectrics", 《APPLIED PHYSICS LETTERS》, 29 November 2006 (2006-11-29) * |
| S.Y.WU 等: "High-quality thin single-crystal r-Al2O3 films grown on Si(111)", 《APPLIED PHYSICS LETTERS》, 25 August 2005 (2005-08-25) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681028A (en) * | 2017-10-24 | 2018-02-09 | 江门市奥伦德光电有限公司 | A kind of vertical stratification zno-based LED chip and preparation method thereof |
| CN107681028B (en) * | 2017-10-24 | 2023-08-29 | 江门市奥伦德光电有限公司 | ZnO-based LED chip with vertical structure and preparation method thereof |
| CN111129296A (en) * | 2019-12-27 | 2020-05-08 | 广东工业大学 | One-time write-in multi-time read memory based on aluminum oxide film and preparation method thereof |
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Application publication date: 20140903 |