CA3127002A1 - Organic thin film transistor and method for producing same - Google Patents
Organic thin film transistor and method for producing same Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 239000010410 layer Substances 0.000 claims abstract description 162
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000002346 layers by function Substances 0.000 claims abstract description 47
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 238000002048 anodisation reaction Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000007669 thermal treatment Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical class O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 11
- 239000002800 charge carrier Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N isocitric acid Chemical compound OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical class [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
- H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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Abstract
The invention relates to an organic thin film transistor (OTFT), particularly a thin film field effect transistor (OFET), having a source electrode, a drain electrode, a gate electrode arranged in top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode and the gate electrode are arranged in a co-planar layer structure, wherein the organic thin film transistor has an intermediate layer for capacitive decoupling of the gate electrode from the source electrode and/or from the source electrode.
Description
DESCRIPTION
Title Organic thin film transistor and method for producing same Prior art The present invention is based on an organic thin film transistor (OTFT), in particular thin film field effect transistor (OFET), comprising a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode and the gate electrode are arranged in a coplanar layer structure. In this case, the gate electrode is separated from the semiconductor layers by a suitable insulator.
Four different thin film transistor architectures exist in principle: 1.
bottom-gate / bottom-contact (BGBC or coplanar BG), 2. bottom-gate / top-contact (BGTC or staggered BG), 3.
top-gate / top-contact (TGTC or coplanar TG) and 4. top-gate / bottom-contact (TGBC or staggered BG).
Present-day silicon-based semiconductor technology is dominated by the 3rd architecture (top-gate / top-contact (TGTC or coplanar TG)), that is to say a coplanar layer structure with a gate electrode at the top, wherein the semiconducting layer lies between the substrate and the gate electrode, since so-called self-patterned electrodes (also referred to as self-aligning electrodes) can be realized in this case. This means that the gate electrode is used as a mask during the doping of the source and drain regions, thereby ensuring only a slight overlap between the gate and the respective edge region of source and drain.
Such self-patterned electrodes significantly reduce the parasitic capacitances of the transistor and thus make possible fast and energy-efficient semiconductor components.
"High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV", C. Ha et al., SID's Digest 69.2, p.1022 (2015) discloses the application of such self-patterned electrodes in association with a transparent conductive oxide such as amorphous indium gallium tin oxide (a-IGZO) for use in ultrathin, high-definition displays.
The great majority of present-day thin film transistors do not use self-patterned electrodes, such that the gate-drain overlap and the gate-source overlap contribute a significant Date Recue/Date Received 2021-07-16
Title Organic thin film transistor and method for producing same Prior art The present invention is based on an organic thin film transistor (OTFT), in particular thin film field effect transistor (OFET), comprising a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode and the gate electrode are arranged in a coplanar layer structure. In this case, the gate electrode is separated from the semiconductor layers by a suitable insulator.
Four different thin film transistor architectures exist in principle: 1.
bottom-gate / bottom-contact (BGBC or coplanar BG), 2. bottom-gate / top-contact (BGTC or staggered BG), 3.
top-gate / top-contact (TGTC or coplanar TG) and 4. top-gate / bottom-contact (TGBC or staggered BG).
Present-day silicon-based semiconductor technology is dominated by the 3rd architecture (top-gate / top-contact (TGTC or coplanar TG)), that is to say a coplanar layer structure with a gate electrode at the top, wherein the semiconducting layer lies between the substrate and the gate electrode, since so-called self-patterned electrodes (also referred to as self-aligning electrodes) can be realized in this case. This means that the gate electrode is used as a mask during the doping of the source and drain regions, thereby ensuring only a slight overlap between the gate and the respective edge region of source and drain.
Such self-patterned electrodes significantly reduce the parasitic capacitances of the transistor and thus make possible fast and energy-efficient semiconductor components.
"High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV", C. Ha et al., SID's Digest 69.2, p.1022 (2015) discloses the application of such self-patterned electrodes in association with a transparent conductive oxide such as amorphous indium gallium tin oxide (a-IGZO) for use in ultrathin, high-definition displays.
The great majority of present-day thin film transistors do not use self-patterned electrodes, such that the gate-drain overlap and the gate-source overlap contribute a significant Date Recue/Date Received 2021-07-16
2 proportion of the total capacitance. The influence of these parasitic overlap capacitances becomes clear from the unity-gain cut-off frequency fr:
gm gm 40 fT = =
27(Cch + 2C0v) 27 Co/W (I, + 21,017) where gm is the transconductance, Cul is the channel capacitance, Coy is the parasitic overlap capacitance, Co is the specific oxide capacitance, W is the channel width, L is the channel length and Loy is the overlap length.
Error tolerances of Loy 3.5 pm are necessary in practice, as a result of which the unity-gain cut-off frequency fr is principally determined by the parasitic overlap length and to a lesser extent by the channel length itself. The consequence of this is that the unity-gain cut-off frequencies fr of organic thin film transistors have not improved in recent years, even though the charge carrier mobility is continuously increasing as a result of further developments.
In order to avoid this disadvantage of conventional organic transistors, various concepts for OTFTs having self-patterned electrodes have been investigated. "Downscaling of self-aligned, all-printed polymer thin-film transistors", Y. Noh et al., Vol. 2, p.
784, Nature Nanotechnology (2007) discloses a self-patterned organic transistor in a staggered top gate geometry. In this case, a channel length (distance between source and drain electrodes) of <1 pm is realized by means of a printing method. The gate electrode is patterned by photolithography in a second patterning step. In this case, source and drain electrodes serve as an exposure mask. In order to make this patterning possible, the photolithography has to be effected from the back through the substrate (back exposure or through-substrate exposure method). However, this method results in severe limitations with regard to the lithographic resolution and the electrode geometry to be realized. Further self-patterned organic transistors are known e.g. from "Self-Aligned Organic Field-Effect Transistors Using Back-Surface Exposure Method", T. Hyodo et al., Japanese Journal of Applied Physics, Vol.
43, No. 4B pp. 2323-232 (2004) and "Self-Aligned Megahertz Organic Transistors Solution-Processed on Plastic", S. Higgins et al., Adv. Electronic Materials, Vol. 1, p. 1500024 (2015).
Bottom gate transistors in a coplanar (Hyodo) and staggered (Higgins) geometry are presented in both steps. These two methods are also based on a photolithography step in which through-substrate exposure has to be effected. Furthermore, so-called lift-off processes have to be used for the patterning of source and drain, said processes not being suitable for industrial production. Self-patterned organic transistors in a coplanar top gate geometry have not been reported in the prior art.
Date Recue/Date Received 2021-07-16
gm gm 40 fT = =
27(Cch + 2C0v) 27 Co/W (I, + 21,017) where gm is the transconductance, Cul is the channel capacitance, Coy is the parasitic overlap capacitance, Co is the specific oxide capacitance, W is the channel width, L is the channel length and Loy is the overlap length.
Error tolerances of Loy 3.5 pm are necessary in practice, as a result of which the unity-gain cut-off frequency fr is principally determined by the parasitic overlap length and to a lesser extent by the channel length itself. The consequence of this is that the unity-gain cut-off frequencies fr of organic thin film transistors have not improved in recent years, even though the charge carrier mobility is continuously increasing as a result of further developments.
In order to avoid this disadvantage of conventional organic transistors, various concepts for OTFTs having self-patterned electrodes have been investigated. "Downscaling of self-aligned, all-printed polymer thin-film transistors", Y. Noh et al., Vol. 2, p.
784, Nature Nanotechnology (2007) discloses a self-patterned organic transistor in a staggered top gate geometry. In this case, a channel length (distance between source and drain electrodes) of <1 pm is realized by means of a printing method. The gate electrode is patterned by photolithography in a second patterning step. In this case, source and drain electrodes serve as an exposure mask. In order to make this patterning possible, the photolithography has to be effected from the back through the substrate (back exposure or through-substrate exposure method). However, this method results in severe limitations with regard to the lithographic resolution and the electrode geometry to be realized. Further self-patterned organic transistors are known e.g. from "Self-Aligned Organic Field-Effect Transistors Using Back-Surface Exposure Method", T. Hyodo et al., Japanese Journal of Applied Physics, Vol.
43, No. 4B pp. 2323-232 (2004) and "Self-Aligned Megahertz Organic Transistors Solution-Processed on Plastic", S. Higgins et al., Adv. Electronic Materials, Vol. 1, p. 1500024 (2015).
Bottom gate transistors in a coplanar (Hyodo) and staggered (Higgins) geometry are presented in both steps. These two methods are also based on a photolithography step in which through-substrate exposure has to be effected. Furthermore, so-called lift-off processes have to be used for the patterning of source and drain, said processes not being suitable for industrial production. Self-patterned organic transistors in a coplanar top gate geometry have not been reported in the prior art.
Date Recue/Date Received 2021-07-16
3 A further disadvantage of the organic thin film transistors (OTFT) known from the prior art is 75 the known "voltage kickback" (VKB) effect which occurs therein, and which has the effect that when the transistor is turned off, the stored capacitance is discharged via the gate-drain capacitance and the stored voltage information is thus lost. This effect constitutes the greatest limitation for the use of organic thin film transistors (OTFT) in active matrix displays.
80 Disclosure of the invention It is therefore an object of the present invention to provide an organic thin film transistor (OTFT) which achieves a higher unity-gain cut-off frequency fr and in which the "voltage kickback" effect is suppressed.
This object is achieved by means of an organic thin film transistor (OTFT), in particular thin film field effect transistor (OFET), comprising a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode and the gate electrode are arranged in a coplanar layer structure, wherein the organic thin film transistor comprises an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.
The thin film transistor according to the invention has the advantage over the prior art that significantly lower parasitic capacitances between gate and source and between gate and drain are achieved owing to the use of the implemented intermediate layer. As a result, advantageously the unity-gain cut-off frequency fr can be increased and the "voltage kickback" (VKB) effect can be reduced, as a result of which the organic thin film transistor according to the invention becomes faster and more energy-efficient and can find application 100 for example in high-definition active matrix displays. Moreover, the technique of self-patterned electrodes can be employed during the production of the thin film transistor according to the invention, since metals on top of organic semiconductors, that is to say in the coplanar top gate arrangement employed here, can be patterned by wet etching, without the organic semiconductor being damaged in the process. The top gate arrangement within 105 the meaning of the present invention means, in particular, that the organic semiconductor functional layer is arranged between the substrate and the gate electrode. The self-patterned electrodes result in only a small and well-defined overlap between the gate and the respective edge region of source and drain, as a result of which only low parasitic capacitances occur. Moreover, the intermediate layer functions as a spacer in order 110 additionally to obtain a capacitive decoupling between gate and source and between gate Date Recue/Date Received 2021-07-16
80 Disclosure of the invention It is therefore an object of the present invention to provide an organic thin film transistor (OTFT) which achieves a higher unity-gain cut-off frequency fr and in which the "voltage kickback" effect is suppressed.
This object is achieved by means of an organic thin film transistor (OTFT), in particular thin film field effect transistor (OFET), comprising a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode and the gate electrode are arranged in a coplanar layer structure, wherein the organic thin film transistor comprises an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.
The thin film transistor according to the invention has the advantage over the prior art that significantly lower parasitic capacitances between gate and source and between gate and drain are achieved owing to the use of the implemented intermediate layer. As a result, advantageously the unity-gain cut-off frequency fr can be increased and the "voltage kickback" (VKB) effect can be reduced, as a result of which the organic thin film transistor according to the invention becomes faster and more energy-efficient and can find application 100 for example in high-definition active matrix displays. Moreover, the technique of self-patterned electrodes can be employed during the production of the thin film transistor according to the invention, since metals on top of organic semiconductors, that is to say in the coplanar top gate arrangement employed here, can be patterned by wet etching, without the organic semiconductor being damaged in the process. The top gate arrangement within 105 the meaning of the present invention means, in particular, that the organic semiconductor functional layer is arranged between the substrate and the gate electrode. The self-patterned electrodes result in only a small and well-defined overlap between the gate and the respective edge region of source and drain, as a result of which only low parasitic capacitances occur. Moreover, the intermediate layer functions as a spacer in order 110 additionally to obtain a capacitive decoupling between gate and source and between gate Date Recue/Date Received 2021-07-16
4 and drain. The intermediate layer is arranged in particular below or above the gate electrode.
Preferably, the intermediate layer is arranged between the gate electrode and the source electrode and/or between the gate electrode and the drain electrode.
The organic semiconductor functional layer is arranged in particular between the gate 115 electrode and the substrate.
Advantageous configurations and developments of the invention can be gathered from the dependent claims, and also the description with reference to the drawings.
120 In accordance with one preferred embodiment of the present invention it is provided that the intermediate layer, perpendicular to a main plane of extent of the substrate, at least partly overlaps both the drain electrode and the source electrode. The capacitive decoupling can thus be maximized in an advantageous manner. It is also conceivable for the extent of the intermediate layer in the main plane of extent to go beyond the extent of the drain electrode 125 and/or the source electrode.
In accordance with one preferred embodiment of the present invention it is provided that the intermediate layer has an interruption in the region of the gate electrode.
The intermediate layer has said interruption in particular if the intermediate layer is arranged below the gate 130 electrode (cf. exemplary embodiment according to figure 1).
Advantageously, the intermediate layer is thus embodied as a continuous layer which has an interruption, that is to say a through opening, only in a partial region of the gate electrode in order that the functionality of the transistor is not impaired. It is also conceivable for the extent of the interruption in the main plane of extent to correspond to the extent of the gate insulator of the 135 organic thin film transistor in the main plane of extent.
Alternatively, the intermediate layer can also be embodied without an interruption, if the intermediate layer is arranged above the gate electrode (cf. exemplary embodiment according to figure 2).
In accordance with one preferred embodiment of the present invention it is provided that the 140 intermediate layer, perpendicular to the main plane of extent, has an in particular average thickness of between 500 nm and 5 pm. The intermediate layer is thus made comparatively thick in particular in comparison with the gate insulator, as a result of which the parasitic capacitance of the intermediate layer is small relative to the capacitance of the active gate region, if for example the thickness of the gate insulator is between 50 nm and 500 nm. The 145 intermediate layer preferably comprises a polymer-based spacer layer and/or a photoresist which originates from a preceding photolithographic patterning step, in particular for Date Recue/Date Received 2021-07-16
Preferably, the intermediate layer is arranged between the gate electrode and the source electrode and/or between the gate electrode and the drain electrode.
The organic semiconductor functional layer is arranged in particular between the gate 115 electrode and the substrate.
Advantageous configurations and developments of the invention can be gathered from the dependent claims, and also the description with reference to the drawings.
120 In accordance with one preferred embodiment of the present invention it is provided that the intermediate layer, perpendicular to a main plane of extent of the substrate, at least partly overlaps both the drain electrode and the source electrode. The capacitive decoupling can thus be maximized in an advantageous manner. It is also conceivable for the extent of the intermediate layer in the main plane of extent to go beyond the extent of the drain electrode 125 and/or the source electrode.
In accordance with one preferred embodiment of the present invention it is provided that the intermediate layer has an interruption in the region of the gate electrode.
The intermediate layer has said interruption in particular if the intermediate layer is arranged below the gate 130 electrode (cf. exemplary embodiment according to figure 1).
Advantageously, the intermediate layer is thus embodied as a continuous layer which has an interruption, that is to say a through opening, only in a partial region of the gate electrode in order that the functionality of the transistor is not impaired. It is also conceivable for the extent of the interruption in the main plane of extent to correspond to the extent of the gate insulator of the 135 organic thin film transistor in the main plane of extent.
Alternatively, the intermediate layer can also be embodied without an interruption, if the intermediate layer is arranged above the gate electrode (cf. exemplary embodiment according to figure 2).
In accordance with one preferred embodiment of the present invention it is provided that the 140 intermediate layer, perpendicular to the main plane of extent, has an in particular average thickness of between 500 nm and 5 pm. The intermediate layer is thus made comparatively thick in particular in comparison with the gate insulator, as a result of which the parasitic capacitance of the intermediate layer is small relative to the capacitance of the active gate region, if for example the thickness of the gate insulator is between 50 nm and 500 nm. The 145 intermediate layer preferably comprises a polymer-based spacer layer and/or a photoresist which originates from a preceding photolithographic patterning step, in particular for Date Recue/Date Received 2021-07-16
5 patterning the drain and source electrodes or the gate electrode, and was not eliminated afterward in the region of the drain and source electrodes or the gate electrode.
A further subject matter of the present invention is a display comprising a plurality of pixels, wherein at least one pixel comprises the organic thin film transistor according to the invention. Ultrathin and high-definition active matrix displays advantageously can be realized 155 with the aid of the organic thin film transistor (OTFT) according to the invention.
A further subject matter of the present invention is the use of an organic thin film transistor according to the invention in a display, in particular in a high-definition active matrix display.
160 A further subject matter of the present invention is a method for producing the organic thin film transistor according to the invention, wherein ¨ in a first production step an organic semiconductor material for forming the organic semiconductor functional layer (4) is deposited on a substrate (2), 165 ¨ in a second production step a first metal layer is arranged on the organic semiconductor material, ¨ in a third production step patterning of the first metal layer is carried out in order to form at least one first electrode, ¨ in a fourth production step a second metal layer is deposited, 170 ¨ in a fifth production step patterning of the second metal layer is carried out in order to form at least one second electrode, ¨ wherein in an additional step carried out between the first and the second production steps or between the third and the fourth production steps, a gate insulation layer (7) is produced, 175 ¨ characterized in that in an intermediate step an intermediate layer (9) for capacitive decoupling is applied to the at least one first electrode or to the at least second electrode.
180 The production method according to the invention makes possible simple and cost-effective production of the thin film transistor according to the invention, which transistor, in comparison with the prior art, has significantly lower parasitic capacitances between gate and source and between gate and drain and can thus find application for example in high-Date Recue/Date Received 2021-07-16
A further subject matter of the present invention is a display comprising a plurality of pixels, wherein at least one pixel comprises the organic thin film transistor according to the invention. Ultrathin and high-definition active matrix displays advantageously can be realized 155 with the aid of the organic thin film transistor (OTFT) according to the invention.
A further subject matter of the present invention is the use of an organic thin film transistor according to the invention in a display, in particular in a high-definition active matrix display.
160 A further subject matter of the present invention is a method for producing the organic thin film transistor according to the invention, wherein ¨ in a first production step an organic semiconductor material for forming the organic semiconductor functional layer (4) is deposited on a substrate (2), 165 ¨ in a second production step a first metal layer is arranged on the organic semiconductor material, ¨ in a third production step patterning of the first metal layer is carried out in order to form at least one first electrode, ¨ in a fourth production step a second metal layer is deposited, 170 ¨ in a fifth production step patterning of the second metal layer is carried out in order to form at least one second electrode, ¨ wherein in an additional step carried out between the first and the second production steps or between the third and the fourth production steps, a gate insulation layer (7) is produced, 175 ¨ characterized in that in an intermediate step an intermediate layer (9) for capacitive decoupling is applied to the at least one first electrode or to the at least second electrode.
180 The production method according to the invention makes possible simple and cost-effective production of the thin film transistor according to the invention, which transistor, in comparison with the prior art, has significantly lower parasitic capacitances between gate and source and between gate and drain and can thus find application for example in high-Date Recue/Date Received 2021-07-16
6 definition active matrix displays. In this case, the method exploits the fact that metals 185 arranged on top of organic semiconductors, that is to say in the coplanar top gate arrangement employed here, can be patterned by wet etching, without the organic semiconductor being damaged in the process. In other words: the source, drain and gate electrodes can be formed in a traditional lithographic patterning method by means of wet etching, even though the transistor is based on an organic semiconductor. The gate 190 insulation layer can then be formed in particular by means of wet-chemical anodization. In this case, the gate insulation layer comprises in particular an aluminum oxide layer.
Alternatively, however, it would also be conceivable that in the fourth production step an insulating polymer layer is applied, in particular by printing or spin coating, as gate insulation layer. By means of the patterning described above, either the gate electrode is produced 195 from the first metal layer and later the drain and source electrodes are produced from the second metal layer, or alternatively the drain and source electrodes are produced or alternatively the drain and source electrodes are produced from the first metal layer and later the gain electrode is produced from the second metal layer. In both cases, the intermediate layer is arranged respectively between the gate and drain electrodes and between the gate 200 and source electrodes. Depending on which layer structure finds application, the additional step for forming the gate insulation layer is carried out before or after the intermediate step for forming the intermediate layer. The intermediate step is furthermore preferably carried out between the second and fourth production steps and in particular between the third and fourth production steps. Optionally, a planarization step is also carried out before the first 205 production step, in which planarization step an auxiliary layer as planarization layer is deposited on the substrate for the purpose of planarizing the substrate.
In accordance with one preferred embodiment of the present invention it is provided that between the first step and the second step an organic functional layer is arranged on the 210 semiconductor functional layer, in a manner preferably completely covering the semiconductor functional layer, wherein the functional layer is partly removed between the third step and the fourth step. The functional layer ensures that the metal electrode deposited in the second production step wets the surface of the semiconductor functional layer better, that is to say that in the second step the metal film is deposited very homogeneously on the 215 semiconductor material and local accumulations of metal atoms at crystal boundaries of the semiconductor material are suppressed. As a result, in the third step the metal electrode can be patterned better, for example by means of wet-chemical etching. This results in a temporally homogeneous etching behavior on the surface and the metal can be removed without residues even from the crystal boundaries of the semiconductor material.
Date Recue/Date Received 2021-07-16
Alternatively, however, it would also be conceivable that in the fourth production step an insulating polymer layer is applied, in particular by printing or spin coating, as gate insulation layer. By means of the patterning described above, either the gate electrode is produced 195 from the first metal layer and later the drain and source electrodes are produced from the second metal layer, or alternatively the drain and source electrodes are produced or alternatively the drain and source electrodes are produced from the first metal layer and later the gain electrode is produced from the second metal layer. In both cases, the intermediate layer is arranged respectively between the gate and drain electrodes and between the gate 200 and source electrodes. Depending on which layer structure finds application, the additional step for forming the gate insulation layer is carried out before or after the intermediate step for forming the intermediate layer. The intermediate step is furthermore preferably carried out between the second and fourth production steps and in particular between the third and fourth production steps. Optionally, a planarization step is also carried out before the first 205 production step, in which planarization step an auxiliary layer as planarization layer is deposited on the substrate for the purpose of planarizing the substrate.
In accordance with one preferred embodiment of the present invention it is provided that between the first step and the second step an organic functional layer is arranged on the 210 semiconductor functional layer, in a manner preferably completely covering the semiconductor functional layer, wherein the functional layer is partly removed between the third step and the fourth step. The functional layer ensures that the metal electrode deposited in the second production step wets the surface of the semiconductor functional layer better, that is to say that in the second step the metal film is deposited very homogeneously on the 215 semiconductor material and local accumulations of metal atoms at crystal boundaries of the semiconductor material are suppressed. As a result, in the third step the metal electrode can be patterned better, for example by means of wet-chemical etching. This results in a temporally homogeneous etching behavior on the surface and the metal can be removed without residues even from the crystal boundaries of the semiconductor material.
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7 During the partial removal of the functional layer, in particular that part of the functional layer is removed which is freely accessible in a direction orthogonal to the main plane of extent of the functional layer after the third step. The regions of the functional layer which are covered by the first metal layer are preferably not removed.
The functional layer is preferably applied with a layer thickness of 1 nm to 100 nm. The functional layer is preferably soluble in a fluorinated solvent, for example hydrofluoroether. It is conceivable for the functional layer to comprise or consist of C60F36, C60F48, F4-TCNQ, and/or F6-TNNCQ molecules. An additional advantage of the functional layer comprising 230 C60F36, C60F48, F4-TCNQ, and/or F6-TNNCQ molecules is that the charge carrier injection and extraction at the source contact and drain contact, respectively, are removed. The contact resistance is thus reduced.
In accordance with one preferred embodiment of the present invention it is provided that after 235 the functional layer has been partly removed, defects are annealed by means of a thermal treatment, wherein the thermal treatment is preferably carried out between the partial removal of the functional layer and the fourth step.
In accordance with one preferred embodiment of the present invention it is provided that the 240 intermediate step comprises applying a polymer-based spacer layer. It is conceivable that the intermediate step comprises applying photoresist in the third production step and the photoresist in the region of at least one first electrode remains contained in the layer structure as intermediate layer for capacitive decoupling.
245 In accordance with one preferred embodiment of the present invention it is provided that in the second production step a double layer composed of aluminum and gold as first metal layer is arranged on the organic semiconductor material, wherein in the third production step the gold layer of the double layer is photolithographically patterned and wherein in the additional step the aluminum layer of the double layer is anodized in order to form the gate 250 insulation layer. The use of the double layer composed of aluminum and gold has advantages in particular for n-doped semiconductors, since the drain and source electrodes are formed from aluminum.
In accordance with one preferred embodiment of the present invention it is provided that the organic semiconductor material is doped in the region of the source and drain electrodes, in Date Recue/Date Received 2021-07-16
The functional layer is preferably applied with a layer thickness of 1 nm to 100 nm. The functional layer is preferably soluble in a fluorinated solvent, for example hydrofluoroether. It is conceivable for the functional layer to comprise or consist of C60F36, C60F48, F4-TCNQ, and/or F6-TNNCQ molecules. An additional advantage of the functional layer comprising 230 C60F36, C60F48, F4-TCNQ, and/or F6-TNNCQ molecules is that the charge carrier injection and extraction at the source contact and drain contact, respectively, are removed. The contact resistance is thus reduced.
In accordance with one preferred embodiment of the present invention it is provided that after 235 the functional layer has been partly removed, defects are annealed by means of a thermal treatment, wherein the thermal treatment is preferably carried out between the partial removal of the functional layer and the fourth step.
In accordance with one preferred embodiment of the present invention it is provided that the 240 intermediate step comprises applying a polymer-based spacer layer. It is conceivable that the intermediate step comprises applying photoresist in the third production step and the photoresist in the region of at least one first electrode remains contained in the layer structure as intermediate layer for capacitive decoupling.
245 In accordance with one preferred embodiment of the present invention it is provided that in the second production step a double layer composed of aluminum and gold as first metal layer is arranged on the organic semiconductor material, wherein in the third production step the gold layer of the double layer is photolithographically patterned and wherein in the additional step the aluminum layer of the double layer is anodized in order to form the gate 250 insulation layer. The use of the double layer composed of aluminum and gold has advantages in particular for n-doped semiconductors, since the drain and source electrodes are formed from aluminum.
In accordance with one preferred embodiment of the present invention it is provided that the organic semiconductor material is doped in the region of the source and drain electrodes, in Date Recue/Date Received 2021-07-16
8 particular by means of molecular dopants, such as F4-TCNQ, F6-TCNNQ, C60F36, W2(hpp)4, or inorganic dopants, such as Wo03, Mo03.
Further details, features and advantages of the invention are evident from the drawings, and also from the following description of preferred embodiments with reference to the drawings.
In this case, the drawings merely illustrate exemplary embodiments of the invention which do not restrict the essential concept of the invention.
Date Recue/Date Received 2021-07-16
Further details, features and advantages of the invention are evident from the drawings, and also from the following description of preferred embodiments with reference to the drawings.
In this case, the drawings merely illustrate exemplary embodiments of the invention which do not restrict the essential concept of the invention.
Date Recue/Date Received 2021-07-16
9 265 Brief description of the drawings Figure 1 shows a schematic sectional view of an organic thin film transistor in accordance with an exemplary first embodiment of the present invention.
Figure 2 shows a schematic sectional view of an organic thin film transistor in accordance with an exemplary second embodiment of the present invention.
275 Figure 3 shows a schematic sectional view of an organic thin film transistor in accordance with an exemplary third embodiment of the present invention.
Figure 4 shows a production step for producing the organic thin film transistor in 280 accordance with the exemplary third embodiment of the present invention.
Figures 5a, 5b shows a test structure of an organic thin film transistor together with an associated measurement series for determining the charge carrier 285 mobility.
Figures 6 a - i schematically show a method for producing an organic thin film transistor in accordance with an exemplary further embodiment of the present invention.
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Figure 2 shows a schematic sectional view of an organic thin film transistor in accordance with an exemplary second embodiment of the present invention.
275 Figure 3 shows a schematic sectional view of an organic thin film transistor in accordance with an exemplary third embodiment of the present invention.
Figure 4 shows a production step for producing the organic thin film transistor in 280 accordance with the exemplary third embodiment of the present invention.
Figures 5a, 5b shows a test structure of an organic thin film transistor together with an associated measurement series for determining the charge carrier 285 mobility.
Figures 6 a - i schematically show a method for producing an organic thin film transistor in accordance with an exemplary further embodiment of the present invention.
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10 290 Embodiments of the invention In the various figures, identical parts are always provided with the same reference signs and, therefore, are generally also referred to or mentioned only once in each case.
295 Figure 1 illustrates a schematic sectional view of a thin film transistor 1 in accordance with an exemplary first embodiment of the present invention.
The organic thin film transistor (OTFT) 1 comprises a substrate 2, on which is arranged an organic semiconductor material for forming an organic semiconductor functional layer 4.
300 Optionally, an auxiliary layer 3 for planarizing the substrate 2 is provided between the organic semiconductor functional layer 4 and the substrate 2. In this case, the substrate 2, the auxiliary layer 3 and the layer composed of organic semiconductor material 4 extend parallel to a main plane of extent 10.
305 A source electrode 5 and a drain electrode 6 composed of metal are formed in a manner spatially separated from one another on the organic semiconductor material 4.
In the main plane of extent 10 a gate insulation layer 7 is formed between the source electrode 5 and the drain electrode 6 in order to electrically insulate the organic semiconductor functional layer 4 from a gate electrode 8.
In the region of the source electrode 5 the organic thin film transistor 1 comprises an intermediate layer 9, which serves to obtain a capacitive decoupling between the source electrode 5 and the gate electrode 8. For this purpose, the intermediate layer 9 completely covers the source electrode 5 along a direction perpendicular to the main plane of extent 10.
315 In other words: the intermediate layer 9 and the source electrode 5 completely overlap one another. Analogously, an intermediate layer 9 is also arranged in the region of the drain electrode 6, said intermediate layer completely overlapping the drain electrode 6 and serving to obtain a capacitive decoupling between the drain electrode 6 and the gate electrode 8.
The gate insulation layer 7 extends laterally in each case across the intermediate layer 9.
320 Furthermore, the gate electrode 8 is arranged on the gate insulation layer 7, said gate electrode likewise both extending over the active region of the transistor and projecting laterally slightly over the source and drain electrodes 5, 6. This overlap inevitably gives rise to unwanted parasitic capacitances between the source electrode 5 and the gate electrode 8 and/or between the drain electrode 6 and the gate electrode 8.
Date Recue/Date Received 2021-07-16
295 Figure 1 illustrates a schematic sectional view of a thin film transistor 1 in accordance with an exemplary first embodiment of the present invention.
The organic thin film transistor (OTFT) 1 comprises a substrate 2, on which is arranged an organic semiconductor material for forming an organic semiconductor functional layer 4.
300 Optionally, an auxiliary layer 3 for planarizing the substrate 2 is provided between the organic semiconductor functional layer 4 and the substrate 2. In this case, the substrate 2, the auxiliary layer 3 and the layer composed of organic semiconductor material 4 extend parallel to a main plane of extent 10.
305 A source electrode 5 and a drain electrode 6 composed of metal are formed in a manner spatially separated from one another on the organic semiconductor material 4.
In the main plane of extent 10 a gate insulation layer 7 is formed between the source electrode 5 and the drain electrode 6 in order to electrically insulate the organic semiconductor functional layer 4 from a gate electrode 8.
In the region of the source electrode 5 the organic thin film transistor 1 comprises an intermediate layer 9, which serves to obtain a capacitive decoupling between the source electrode 5 and the gate electrode 8. For this purpose, the intermediate layer 9 completely covers the source electrode 5 along a direction perpendicular to the main plane of extent 10.
315 In other words: the intermediate layer 9 and the source electrode 5 completely overlap one another. Analogously, an intermediate layer 9 is also arranged in the region of the drain electrode 6, said intermediate layer completely overlapping the drain electrode 6 and serving to obtain a capacitive decoupling between the drain electrode 6 and the gate electrode 8.
The gate insulation layer 7 extends laterally in each case across the intermediate layer 9.
320 Furthermore, the gate electrode 8 is arranged on the gate insulation layer 7, said gate electrode likewise both extending over the active region of the transistor and projecting laterally slightly over the source and drain electrodes 5, 6. This overlap inevitably gives rise to unwanted parasitic capacitances between the source electrode 5 and the gate electrode 8 and/or between the drain electrode 6 and the gate electrode 8.
Date Recue/Date Received 2021-07-16
11 The intermediate layer 9 comprises a preferably polymer-based spacer layer (alternatively, oxides, nitrides or small molecule layers would also be conceivable as spacer layer), which can be for example a non-removed photoresist from a preceding photolithographic patterning method for patterning the source and drain electrodes 5, 6. The intermediate layer 9 330 functions as a spacer and for this purpose preferably has a thickness of between 500 nm and pm. In comparison with the typical thickness of the gate insulation layer 7 of between 50 nm and 500 nm, the intermediate layer 9 is therefore comparatively thick, such that the parasitic capacitances between the source electrode 5 and the gate electrode 8 and/or between the drain electrode 6 and the gate electrode 8 advantageously become very small in 335 comparison with the capacitance of the active gate region.
Consequently, the unity-gain cut-off frequency fr can be increased and the "voltage kickback" (VKB) effect can be reduced, as a result of which the organic thin film transistor 1 according to the invention becomes faster and more energy-efficient and can find application for example in high-definition active matrix displays.
A further advantage of the organic thin film transistor 1 according to the invention is that the electrodes can be formed by means of a conventional photolithographic patterning with subsequent wet-chemical anodization, without the organic semiconductor material incurring damage in the process. The production of the organic thin film transistor 1 according to the 345 invention can thus be effected in the manner of self-patterned electrodes, as a result of which low parasitic capacitances and cost-effective production are made possible.
The organic thin film transistor 1 shown in figure 1 is produced by firstly providing a substrate 2 (zeroth production step), which is optionally coated with the auxiliary layer 3 for planarizing 350 the substrate 2. In the first production step, the organic semiconductor material for forming the organic functional layer 4 is then deposited on the substrate 2 or respectively the auxiliary layer 3.
In a second production step, subsequently a first metal layer, for example composed of gold, 355 is applied to the organic functional layer 4, for example by means of physical vapor deposition (PVD), or vapor deposition. In the third production step, said first metal layer is patterned by means of conventional photolithographic patterning, as a result of which the source electrode 5 and the drain electrode 6 are formed. For this purpose, the metal layer is firstly coated with a photoresist as masking layer, subsequently exposed and then etched 360 wet-chemically (aqueous solution) in such a way that the underlying semiconductor does not incur any damage. For noble metals such as gold or silver, for example, this etching step can be carried out by means of KI/12 solution or aqua regia. For copper, metal chloride salt Date Recue/Date Received 2021-07-16
Consequently, the unity-gain cut-off frequency fr can be increased and the "voltage kickback" (VKB) effect can be reduced, as a result of which the organic thin film transistor 1 according to the invention becomes faster and more energy-efficient and can find application for example in high-definition active matrix displays.
A further advantage of the organic thin film transistor 1 according to the invention is that the electrodes can be formed by means of a conventional photolithographic patterning with subsequent wet-chemical anodization, without the organic semiconductor material incurring damage in the process. The production of the organic thin film transistor 1 according to the 345 invention can thus be effected in the manner of self-patterned electrodes, as a result of which low parasitic capacitances and cost-effective production are made possible.
The organic thin film transistor 1 shown in figure 1 is produced by firstly providing a substrate 2 (zeroth production step), which is optionally coated with the auxiliary layer 3 for planarizing 350 the substrate 2. In the first production step, the organic semiconductor material for forming the organic functional layer 4 is then deposited on the substrate 2 or respectively the auxiliary layer 3.
In a second production step, subsequently a first metal layer, for example composed of gold, 355 is applied to the organic functional layer 4, for example by means of physical vapor deposition (PVD), or vapor deposition. In the third production step, said first metal layer is patterned by means of conventional photolithographic patterning, as a result of which the source electrode 5 and the drain electrode 6 are formed. For this purpose, the metal layer is firstly coated with a photoresist as masking layer, subsequently exposed and then etched 360 wet-chemically (aqueous solution) in such a way that the underlying semiconductor does not incur any damage. For noble metals such as gold or silver, for example, this etching step can be carried out by means of KI/12 solution or aqua regia. For copper, metal chloride salt Date Recue/Date Received 2021-07-16
12 solutions composed of e.g. NaCI, CuC12, MgCl2 or the like are suitable. Said salt solutions preferably contain hydrogen chloride (HCI). Base metals such as Al, for example, can be 365 etched using basic solutions such as NaOH or tetramethylammonium hydroxides. The concentrations of the respective substances in an aqueous solution determine the etching rate. In order that the lithographic structures are transferred with structural fidelity, it is recommended to use diluted etching solutions: e.g. K1/12 diluted with H20 (ratio 1:10), or aqua regia diluted with H20 (ratio 1:10).
370 In a succeeding additional step, the gate insulation layer 7 is formed by applying a thin insulating polymer layer, which is applied by printing or spin coating, for example.
Alternatively, insulation layers composed of aluminum, titanium or hafnium oxide, for instance, are also conceivable.
375 In order to form the intermediate layer 9, either the photoresist in the region of the source and drain electrodes 5, 6 is not removed after the third production step, such that the photoresist subsequently functions as intermediate layer 9 for capacitive decoupling. The intermediate step thus comprises that partial step of the third production step in which the photoresist is applied. Alternatively, an intermediate step for applying a polymeric spacer 380 layer is carried out after the third production step, said layer constituting the intermediate layer 9. The intermediate step is carried out either before or after the additional step.
Afterward, in a fourth production step a second metal layer is applied, which is photolithograph ically patterned in order to form the gate electrode 8 in a fifth production step.
It is optionally conceivable for the organic semiconductor material additionally to be doped in the region of the source and drain electrodes 5, 6, in particular by means of molecular dopants, such as F4-TCNQ, F6-TCNNQ, C60F36, W2(hpp)4, or inorganic dopants, such as Wo03, Mo03.
Figure 2 illustrates a schematic sectional view of an organic thin film transistor 1 in accordance with an exemplary second embodiment of the present invention.
The second embodiment substantially corresponds to the first embodiment explained with 395 reference to figure 1, with the difference that the intermediate layer 9 is arranged on the gate electrode 8 and thus extends between the gate electrode 8 and the drain and source electrodes 5, 6 led partly over the intermediate layer 9 or gate electrode 8.
Date Recue/Date Received 2021-07-16
370 In a succeeding additional step, the gate insulation layer 7 is formed by applying a thin insulating polymer layer, which is applied by printing or spin coating, for example.
Alternatively, insulation layers composed of aluminum, titanium or hafnium oxide, for instance, are also conceivable.
375 In order to form the intermediate layer 9, either the photoresist in the region of the source and drain electrodes 5, 6 is not removed after the third production step, such that the photoresist subsequently functions as intermediate layer 9 for capacitive decoupling. The intermediate step thus comprises that partial step of the third production step in which the photoresist is applied. Alternatively, an intermediate step for applying a polymeric spacer 380 layer is carried out after the third production step, said layer constituting the intermediate layer 9. The intermediate step is carried out either before or after the additional step.
Afterward, in a fourth production step a second metal layer is applied, which is photolithograph ically patterned in order to form the gate electrode 8 in a fifth production step.
It is optionally conceivable for the organic semiconductor material additionally to be doped in the region of the source and drain electrodes 5, 6, in particular by means of molecular dopants, such as F4-TCNQ, F6-TCNNQ, C60F36, W2(hpp)4, or inorganic dopants, such as Wo03, Mo03.
Figure 2 illustrates a schematic sectional view of an organic thin film transistor 1 in accordance with an exemplary second embodiment of the present invention.
The second embodiment substantially corresponds to the first embodiment explained with 395 reference to figure 1, with the difference that the intermediate layer 9 is arranged on the gate electrode 8 and thus extends between the gate electrode 8 and the drain and source electrodes 5, 6 led partly over the intermediate layer 9 or gate electrode 8.
Date Recue/Date Received 2021-07-16
13 This second embodiment is produced analogously to the first embodiment, with the 400 additional step being carried out before the second production step in order to produce the gate insulation layer 7 below the gate electrode 8 to be produced subsequently. Furthermore, the patterning of the first metal layer is carried out in the third production step in order to form the gate electrode 8. The patterning of the second metal layer in the fifth method step then serves for forming the drain and source electrodes (5, 6). For the patterning of the gate 405 electrode (8), and also of source and drain, recourse is had to wet-chemical etching processes as described in the first embodiment. The process of wet-chemical oxidation is used for the production of the gate insulation layer 7. In this case, the gate electrode 8 consists of a wet-chemically oxidizable metal, or of a layer sequence of an oxidizable metal and a noble metal (e.g. aluminum and gold, cf. third embodiment).
Figure 3 illustrates a schematic sectional view of an organic thin film transistor 1 in accordance with an exemplary third embodiment of the present invention.
The third embodiment substantially corresponds to the first embodiment explained with 415 reference to figure 1, but in the second production step, rather than a single metal layer, a double layer composed of aluminum and gold was deposited on the organic semiconductor material. In this case, a thin layer of chromium is preferably deposited between the layer of aluminum and the layer of gold. Said layer of chromium prevents the formation of undesired alloys between Al and Au. The anodization is effected in an aqueous solution of citric acid (2-420 hydroxypropane-1,2,3-tricarboxylic acid) having a concentration of 1 mM/I.
In the third production step, photolithographic patterning of the gold layer is then carried out in order to form the source and drain electrodes 5, 6. The photoresist in the region of the source and drain electrodes 5, 6 is not removed and thus functions as an intermediate layer 425 9 in the form of the polymer-based spacer layer. In the succeeding fourth production step, by means of wet-chemical anodization of the aluminum layer uncovered in the third production step, the gate insulation layer 7 is formed in the form of an aluminum oxide layer (A1203). The thickness of the gate insulation layer 7 is again controlled by means of the electrical voltage applied during the anodization. A schematic detailed diagram of the wet-chemical 430 anodization of the aluminum layer is illustrated in figure 4. The anodization is effected in an aqueous solution of citric acid (2-hydroxypropane-1,2,3-tricarboxylic acid) having a concentration of 1 mM/I.
Afterwards, in a fifth production step a metal layer is applied, which is photolithographically 435 patterned in order to form the gate electrode 8 in a sixth production step.
Date Recue/Date Received 2021-07-16
Figure 3 illustrates a schematic sectional view of an organic thin film transistor 1 in accordance with an exemplary third embodiment of the present invention.
The third embodiment substantially corresponds to the first embodiment explained with 415 reference to figure 1, but in the second production step, rather than a single metal layer, a double layer composed of aluminum and gold was deposited on the organic semiconductor material. In this case, a thin layer of chromium is preferably deposited between the layer of aluminum and the layer of gold. Said layer of chromium prevents the formation of undesired alloys between Al and Au. The anodization is effected in an aqueous solution of citric acid (2-420 hydroxypropane-1,2,3-tricarboxylic acid) having a concentration of 1 mM/I.
In the third production step, photolithographic patterning of the gold layer is then carried out in order to form the source and drain electrodes 5, 6. The photoresist in the region of the source and drain electrodes 5, 6 is not removed and thus functions as an intermediate layer 425 9 in the form of the polymer-based spacer layer. In the succeeding fourth production step, by means of wet-chemical anodization of the aluminum layer uncovered in the third production step, the gate insulation layer 7 is formed in the form of an aluminum oxide layer (A1203). The thickness of the gate insulation layer 7 is again controlled by means of the electrical voltage applied during the anodization. A schematic detailed diagram of the wet-chemical 430 anodization of the aluminum layer is illustrated in figure 4. The anodization is effected in an aqueous solution of citric acid (2-hydroxypropane-1,2,3-tricarboxylic acid) having a concentration of 1 mM/I.
Afterwards, in a fifth production step a metal layer is applied, which is photolithographically 435 patterned in order to form the gate electrode 8 in a sixth production step.
Date Recue/Date Received 2021-07-16
14 The use of the double layer composed of aluminum and gold has advantages in particular for n-doped semiconductors since the drain and source electrodes 5, 6 are formed from aluminum.
Optionally, it is conceivable for the organic semiconductor material additionally to be doped in the region of the source and drain electrodes 5, 6, in particular by means of molecular dopants, such as F4-TCNQ, F6-TCNNQ, C60F36, W2(hpp)4, or inorganic dopants, such as Wo03, Mo03.
Figures 5a and 5b show a test structure of an organic thin film transistor 1 together with an associated measurement series 11 for determining the charge carrier mobility.
In principle, in the past it has been assumed that organic semiconductor material is damaged 450 during patterning by means of lithographic methods.
Therefore, the organic thin film transistor 1 illustrated in figure 5a was realized as a test structure, substantially corresponding to the structure of the organic thin film transistor 1 in accordance with the first embodiment of the present invention as illustrated in figure 1, 455 wherein between the organic semiconductor functional layer 4 and the substrate 1 additionally a further gate electrode 12 is implemented directly on the substrate 2 and a further gate insulation layer 13 is implemented between the further gate electrode 12 and the organic semiconductor functional layer 4.
460 In order to check whether the organic semiconductor material is actually damaged by the lithographic patterning of the metal layers, in the case of the test structure the charge carrier mobility in the region of the gate electrode 8 was then compared with the charge carrier mobility in the region of the further gate electrode 12. The measurement results are illustrated as measurement series 11 in figure 5b for various gate-source voltages (see the 465 legend). The source-drain voltage in volts is plotted on the abscissa axis, while the source-drain current intensity in amperes is plotted on the ordinate axis.
The result is that the charge carrier mobility was not impaired by the lithographic patterning.
It has thus been discovered that some metals can be patterned directly on the organic 470 semiconductor by means of wet etching, without the organic semiconductor material therefore being impaired.
Date Recue/Date Received 2021-07-16
Optionally, it is conceivable for the organic semiconductor material additionally to be doped in the region of the source and drain electrodes 5, 6, in particular by means of molecular dopants, such as F4-TCNQ, F6-TCNNQ, C60F36, W2(hpp)4, or inorganic dopants, such as Wo03, Mo03.
Figures 5a and 5b show a test structure of an organic thin film transistor 1 together with an associated measurement series 11 for determining the charge carrier mobility.
In principle, in the past it has been assumed that organic semiconductor material is damaged 450 during patterning by means of lithographic methods.
Therefore, the organic thin film transistor 1 illustrated in figure 5a was realized as a test structure, substantially corresponding to the structure of the organic thin film transistor 1 in accordance with the first embodiment of the present invention as illustrated in figure 1, 455 wherein between the organic semiconductor functional layer 4 and the substrate 1 additionally a further gate electrode 12 is implemented directly on the substrate 2 and a further gate insulation layer 13 is implemented between the further gate electrode 12 and the organic semiconductor functional layer 4.
460 In order to check whether the organic semiconductor material is actually damaged by the lithographic patterning of the metal layers, in the case of the test structure the charge carrier mobility in the region of the gate electrode 8 was then compared with the charge carrier mobility in the region of the further gate electrode 12. The measurement results are illustrated as measurement series 11 in figure 5b for various gate-source voltages (see the 465 legend). The source-drain voltage in volts is plotted on the abscissa axis, while the source-drain current intensity in amperes is plotted on the ordinate axis.
The result is that the charge carrier mobility was not impaired by the lithographic patterning.
It has thus been discovered that some metals can be patterned directly on the organic 470 semiconductor by means of wet etching, without the organic semiconductor material therefore being impaired.
Date Recue/Date Received 2021-07-16
15 Figures 6 (a) ¨ (i) schematically illustrate a method for producing an organic thin film transistor 1 in accordance with an exemplary further embodiment of the present invention.
475 Figure 6 (a) shows the process of providing the substrate 2. In the first step, the organic semiconductor functional layer 4 is deposited onto the substrate 2, followed by a functional layer 14. The functional layer 14 is an organic functional layer 14 and has a thickness of between 1 nm and 100 nm. The functional layer 14 is soluble with a solvent.
Figure 6 (c) illustrates the process of depositing the first metal layer (designated here by 5, 6) in the 480 second step, from which layer the source electrode 5 and the drain electrode 6 are fabricated in a later step. After the first metal layer 5, 6 has been deposited, in the intermediate step the intermediate layer 9 is applied, as shown in figure 6 (d), and is patterned, as shown in figure 6 (e). Figure 6 (f) shows the third step, in which the first metal layer 5, 6 is patterned to form the source electrode 5 and to form the drain electrode 6. Afterward, the functional layer 14 is 485 partly dissolved as shown in figure 6 (g). This is done where the functional layer 14 is not covered after the patterning of the first metal layer 5, 6 in the third step.
Figure 6 (h) shows the production of the gate insulation layer 7 in the additional step.
Afterward, the gate electrode 8 is deposited and patterned, as shown in figure 6 (i).
Date Recue/Date Received 2021-07-16
475 Figure 6 (a) shows the process of providing the substrate 2. In the first step, the organic semiconductor functional layer 4 is deposited onto the substrate 2, followed by a functional layer 14. The functional layer 14 is an organic functional layer 14 and has a thickness of between 1 nm and 100 nm. The functional layer 14 is soluble with a solvent.
Figure 6 (c) illustrates the process of depositing the first metal layer (designated here by 5, 6) in the 480 second step, from which layer the source electrode 5 and the drain electrode 6 are fabricated in a later step. After the first metal layer 5, 6 has been deposited, in the intermediate step the intermediate layer 9 is applied, as shown in figure 6 (d), and is patterned, as shown in figure 6 (e). Figure 6 (f) shows the third step, in which the first metal layer 5, 6 is patterned to form the source electrode 5 and to form the drain electrode 6. Afterward, the functional layer 14 is 485 partly dissolved as shown in figure 6 (g). This is done where the functional layer 14 is not covered after the patterning of the first metal layer 5, 6 in the third step.
Figure 6 (h) shows the production of the gate insulation layer 7 in the additional step.
Afterward, the gate electrode 8 is deposited and patterned, as shown in figure 6 (i).
Date Recue/Date Received 2021-07-16
16 List of reference signs 1 Organic thin film transistor 2 Substrate 3 Auxiliary layer for planarization 4 Organic semiconductor functional layer 495 5 Source electrode 6 Drain electrode 7 Gate insulation layer 8 Gate electrode 9 Intermediate layer 500 10 Main plane of extent 11 Measurement series 12 Further gate electrode 13 Further gate insulation layer 14 Functional layer Date Recue/Date Received 2021-07-16
Claims (22)
1. An organic thin film transistor (OTFT) (1), in particular thin film field effect transistor (OFET), comprising a substrate (2), a source electrode (5), a drain electrode (5), a gate electrode (8) arranged in a top gate arrangement, and an organic semiconductor functional layer (4), wherein the source electrode (5), the drain electrode (6) and the gate electrode (8) are arranged in a coplanar layer structure, characterized in that the organic thin film transistor (1) comprises an intermediate layer (9) for the capacitive decoupling of the gate electrode (8) from the source electrode (5) and/or from the drain electrode (6).
2. The organic thin film transistor (1) as claimed in claim 1, wherein the organic semiconductor functional layer (4) is arranged between the gate electrode (8) and the substrate (2).
3. The organic thin film transistor (1) as claimed in either of the preceding claims, wherein the intermediate layer (9) is arranged below or above the gate electrode (8).
4. The organic thin film transistor (1) as claimed in any of the preceding claims, wherein the intermediate layer (9), perpendicular to a main plane of extent (10) of the substrate (2), at least partly overlaps both the drain electrode (5) and the source electrode (5).
5. The organic thin film transistor (1) as claimed in claim 4, wherein the intermediate layer (9) has an interruption in the region of the gate electrode (8).
6. The organic thin film transistor (1) as claimed in any of the preceding claims, wherein the intermediate layer (9) has a thickness of between 500 nm and 5 pm.
7. The organic thin film transistor (1) as claimed in any of the preceding claims, wherein the intermediate layer (9) comprises a polymer-based spacer layer.
8. The organic thin film transistor (1) as claimed in any of the preceding claims, wherein the intermediate layer (9) is a photoresist from an in particular photolithographic patterning method.
9. A display comprising a multiplicity of pixels, wherein at least one pixel comprises an organic thin film transistor (1) as claimed in any of the preceding claims.
Date Recue/Date Received 2021-07-16
Date Recue/Date Received 2021-07-16
10. The use of an organic thin film transistor (1) as claimed in any of claims 1 to 9 in a display.
11. A method for producing an organic thin film transistor (1) as claimed in any of claims 1 to 9, characterized in that ¨ in a first production step an organic semiconductor material for forming the organic semiconductor functional layer (4) is deposited on a substrate (2), ¨ in a second production step a first metal layer is arranged on the organic semiconductor material, ¨ in a third production step patterning of the first metal layer is carried out in order to form at least one first electrode, ¨ in a fourth production step a second metal layer is deposited, ¨ in a fifth production step patterning of the second metal layer is carried out in order to form at least one second electrode, ¨ wherein in an additional step carried out between the first and the second production steps or between the third and the fourth production steps, a gate insulation layer (7) is produced, ¨ characterized in that in an intermediate step an intermediate layer (9) for capacitive decoupling is applied to the at least one first electrode or to the at least second electrode.
12. The method as claimed in claim 11, wherein between the first step and the second step an organic functional layer (14) is arranged on the semiconductor functional layer (4), in a manner preferably completely covering the semiconductor functional layer (4), wherein the functional layer (14) is partly removed between the third step and the fourth step.
13. The method as claimed in claim 12, wherein after the functional layer (14) has been partly removed, defects are annealed by means of a thermal treatment, wherein the thermal treatment is preferably carried out between the partial removal of the functional layer (14) and the fourth step.
14. The method as claimed in any of claims 11 to 13, wherein the intermediate step is carried out between the second and fourth production steps and in particular between the third and fourth production steps.
Date Recue/Date Received 2021-07-16
Date Recue/Date Received 2021-07-16
15. The method as claimed in either of claims 11 and 14, wherein the intermediate step is carried out before or after the additional step and preferably comprises applying a polymer-based spacer layer.
16. The method as claimed in claim 15, wherein the intermediate step comprises applying photoresist in the third production step and the photoresist in the region of the at least one first electrode remains contained in the layer structure as intermediate layer (9) for capacitive decoupling.
17. The method as claimed in any of claims 11 to 16, wherein in the additional step an in particular wet-chemical anodization of the first metal layer is carried out in order to form the gate insulation layer (7), in particular in the form of an aluminum oxide layer.
18. The method as claimed in claim 17, wherein in the additional step an insulating polymer layer is applied, in particular by printing or spin coating, as gate insulation layer (7).
19. The method as claimed in any of claims 11 to 18, wherein the intermediate step comprises applying photoresist in the third production step and the photoresist in the region of the source and drain electrodes (5, 6) remains contained in the layer structure as intermediate layer (9) for capacitive decoupling.
20. The method as claimed in any of claims 11 to 19, wherein in the second production step a double layer composed of aluminum and gold as first metal layer is arranged on the organic semiconductor material, wherein in the third production step the gold layer of the double layer is in particular photolithographically patterned and wherein in the additional step the aluminum layer of the double layer is anodized in order to form the gate insulation layer (7).
21. The method as claimed in any of claims 11 to 20, wherein the at least one first electrode comprises the source electrode (5) and the drain electrode (6) and the at least one second electrode comprises the gate electrode (8).
22. The method as claimed in any of claims 11 to 21, wherein the at least one first electrode comprises the gate electrode (8) and the at least one second electrode comprises the source electrode (5) and the drain electrode (6).
Date Recue/Date Received 2021-07-16
Date Recue/Date Received 2021-07-16
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019200810.0 | 2019-01-23 | ||
| DE102019200810.0A DE102019200810B4 (en) | 2019-01-23 | 2019-01-23 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME |
| PCT/EP2020/051185 WO2020152061A1 (en) | 2019-01-23 | 2020-01-17 | Organic thin film transistor and method for producing same |
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| Publication Number | Publication Date |
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| CA3127002A1 true CA3127002A1 (en) | 2020-07-30 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CA3127002A Pending CA3127002A1 (en) | 2019-01-23 | 2020-01-17 | Organic thin film transistor and method for producing same |
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| Country | Link |
|---|---|
| US (1) | US20210391549A1 (en) |
| EP (1) | EP3915156A1 (en) |
| JP (1) | JP2022516272A (en) |
| KR (1) | KR20210105973A (en) |
| CA (1) | CA3127002A1 (en) |
| DE (1) | DE102019200810B4 (en) |
| WO (1) | WO2020152061A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161486B (en) * | 2021-04-07 | 2023-02-17 | 华东师范大学 | P-type organic thin film transistor based on molybdenum trioxide contact doping and preparation method |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3426531B2 (en) * | 1998-10-30 | 2003-07-14 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive polymer composition, method for producing relief pattern, and electronic component |
| DE10153656A1 (en) * | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Process for reducing the contact resistance in organic field effect transistors by applying a reactive intermediate layer that doses the organic semiconductor layer in the contact region in a regio-selective manner |
| EP2207217A1 (en) * | 2001-12-19 | 2010-07-14 | Merck Patent GmbH | Organic field effect transistor with an organic dielectric |
| EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
| CN1577796A (en) * | 2003-07-10 | 2005-02-09 | 精工爱普生株式会社 | Method for producing electronic device and method for producing semiconductor device |
| JP4774679B2 (en) * | 2004-03-31 | 2011-09-14 | 大日本印刷株式会社 | Organic semiconductor device |
| JP5109223B2 (en) * | 2004-08-04 | 2012-12-26 | ソニー株式会社 | Field effect transistor |
| WO2006098416A1 (en) * | 2005-03-15 | 2006-09-21 | Pioneer Corporation | Organic thin-film transistor and method for manufacturing same |
| US20060270066A1 (en) * | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
| JP2007035742A (en) * | 2005-07-25 | 2007-02-08 | Seiko Epson Corp | Thin-film transistor forming method |
| JP2007266298A (en) * | 2006-03-28 | 2007-10-11 | Sanyo Electric Co Ltd | Organic transistor and method for manufacturing organic transistor |
| US8987808B2 (en) * | 2006-03-29 | 2015-03-24 | Cambridge Enterprise Limited | Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same |
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| US8624330B2 (en) | 2008-11-26 | 2014-01-07 | Palo Alto Research Center Incorporated | Thin film transistors and high fill factor pixel circuits and methods for forming same |
| US8242542B2 (en) * | 2009-02-24 | 2012-08-14 | International Business Machines Corporation | Semiconductor switching device employing a quantum dot structure |
| WO2011036866A1 (en) * | 2009-09-25 | 2011-03-31 | 出光興産株式会社 | Organic thin-film transistor |
| US8411489B2 (en) * | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US10167362B2 (en) * | 2011-06-17 | 2019-01-01 | The Regents Of The University Of California | Doping-induced carrier density modulation in polymer field-effect transistors |
| US10367144B2 (en) * | 2011-06-17 | 2019-07-30 | The Regents Of The University Of California | Stable organic field-effect transistors by incorporating an electron-accepting molecule |
| EP2740167B1 (en) * | 2011-08-03 | 2018-12-26 | Universita' Degli Studi Di Cagliari | Method of manufacturing low voltage organic transistor |
| JP6168795B2 (en) * | 2012-03-14 | 2017-07-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
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| KR101928284B1 (en) * | 2015-03-23 | 2018-12-12 | 닛뽄 가야쿠 가부시키가이샤 | Organic compound, organic semiconductor material, organic thin-film and method for producing same, organic semiconductor composition, and organic semiconductor device |
| US20170092865A1 (en) * | 2015-09-30 | 2017-03-30 | LI Yuning | N-type organic semiconductor formulations and devices |
| US10504925B2 (en) * | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| WO2018029160A1 (en) * | 2016-08-11 | 2018-02-15 | Merck Patent Gmbh | Method to achieve efficient charge injection for electron and/or hole transport in semiconducting layers |
| GB2554362B (en) * | 2016-09-21 | 2020-11-11 | Pragmatic Printing Ltd | Transistor and its method of manufacture |
| KR102556021B1 (en) * | 2017-10-13 | 2023-07-17 | 삼성디스플레이 주식회사 | Display apparatus and manufacturing the same |
-
2019
- 2019-01-23 DE DE102019200810.0A patent/DE102019200810B4/en active Active
-
2020
- 2020-01-17 JP JP2021538473A patent/JP2022516272A/en active Pending
- 2020-01-17 CA CA3127002A patent/CA3127002A1/en active Pending
- 2020-01-17 WO PCT/EP2020/051185 patent/WO2020152061A1/en unknown
- 2020-01-17 US US17/418,303 patent/US20210391549A1/en active Pending
- 2020-01-17 EP EP20701710.4A patent/EP3915156A1/en active Pending
- 2020-01-17 KR KR1020217023292A patent/KR20210105973A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020152061A9 (en) | 2020-11-12 |
| DE102019200810A1 (en) | 2020-07-23 |
| EP3915156A1 (en) | 2021-12-01 |
| US20210391549A1 (en) | 2021-12-16 |
| DE102019200810B4 (en) | 2023-12-07 |
| WO2020152061A1 (en) | 2020-07-30 |
| KR20210105973A (en) | 2021-08-27 |
| JP2022516272A (en) | 2022-02-25 |
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