[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CA2460996A1 - Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium - Google Patents

Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium Download PDF

Info

Publication number
CA2460996A1
CA2460996A1 CA002460996A CA2460996A CA2460996A1 CA 2460996 A1 CA2460996 A1 CA 2460996A1 CA 002460996 A CA002460996 A CA 002460996A CA 2460996 A CA2460996 A CA 2460996A CA 2460996 A1 CA2460996 A1 CA 2460996A1
Authority
CA
Canada
Prior art keywords
silicon
chamber
powder
temperature
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002460996A
Other languages
English (en)
Inventor
Kiril A. Pandelisev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Phoenix Scientific Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoenix Scientific Corp filed Critical Phoenix Scientific Corp
Publication of CA2460996A1 publication Critical patent/CA2460996A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2303/00—Use of resin-bonded materials as reinforcement
    • B29K2303/04—Inorganic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2503/00—Use of resin-bonded materials as filler
    • B29K2503/04—Inorganic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention porte sur un procédé, sur un appareil et sur l'application d'un composite en silicium/alliage de silicium/silicium comprenant au moins une nacelle formée d'atomes de silicium, un composite en silicium/alliage de silicium/silicium comprenant au moins une chambre épitaxiale formée d'atomes de silicium et divers composites en silicium/alliage de silicium/silicium comprenant au moins un ensemble tubulaire et des revêtements formés d'atomes de silicium. L'invention porte également sur des procédés de compression des poudres, de dépôt des poudres par plasma et sans plasma, de dépôt et coulée de suspensions, de coulée de silicium/alliage de silicium et de solidification directionnelle, ainsi que sur des articles fabriqués en silicium/alliage de silicium et certaines de leurs applications dans l'industrie de transformation des plaquettes.
CA002460996A 2001-09-19 2002-09-19 Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium Abandoned CA2460996A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32309801P 2001-09-19 2001-09-19
US60/323,098 2001-09-19
US33671201P 2001-12-07 2001-12-07
US60/336,712 2001-12-07
PCT/US2002/029516 WO2003024876A2 (fr) 2001-09-19 2002-09-19 Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium

Publications (1)

Publication Number Publication Date
CA2460996A1 true CA2460996A1 (fr) 2003-03-27

Family

ID=26983771

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002460996A Abandoned CA2460996A1 (fr) 2001-09-19 2002-09-19 Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium

Country Status (3)

Country Link
AU (1) AU2002327648A1 (fr)
CA (1) CA2460996A1 (fr)
WO (1) WO2003024876A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115029786A (zh) * 2022-06-24 2022-09-09 云南北方光学科技有限公司 一种红外用薄形硅窗口的加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021382A (ja) * 1983-07-15 1985-02-02 Canon Inc プラズマｃｖｄ装置
US5340516A (en) * 1989-07-28 1994-08-23 Engelhard Corporation Thermal shock and creep resistant porous mullite articles prepared from topaz and process for manufacture
US5173121A (en) * 1990-11-09 1992-12-22 The Board Of Trustees Of The University Of Little Rock Apparatus for the deposition and film formation of silicon on substrates
JPH0610080A (ja) * 1992-06-25 1994-01-18 Takeshi Masumoto 微細組織を有する高強度合金の製造方法
US6194026B1 (en) * 1998-10-19 2001-02-27 Howmet Research Corporation Superalloy component with abrasive grit-free coating
JP4216491B2 (ja) * 2000-06-01 2009-01-28 三井造船株式会社 α−ＳｉＣウェハの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115029786A (zh) * 2022-06-24 2022-09-09 云南北方光学科技有限公司 一种红外用薄形硅窗口的加工方法
CN115029786B (zh) * 2022-06-24 2024-04-30 云南北方光学科技有限公司 一种红外用薄形硅窗口的加工方法

Also Published As

Publication number Publication date
WO2003024876A2 (fr) 2003-03-27
AU2002327648A1 (en) 2003-04-01
WO2003024876A3 (fr) 2003-05-22

Similar Documents

Publication Publication Date Title
US20070172603A1 (en) Process and Apparatus for Silicon Boat, Silicon Tubing and Other Silicon Based Member Fabrication
EP1499464B1 (fr) Procede et appareil de production d'un composant moule
KR100999216B1 (ko) 주조 주형 가열방법
EP2359958B1 (fr) Method de production d'un système de moule de coulée en céramique
US4855011A (en) Isostatic self-contained bond or mold tool
US4478626A (en) Method of hot isostatic pressing treatment
US4789506A (en) Method of producing tubular ceramic articles
GB2301545A (en) Manufacture of composite materials
US20090315323A1 (en) Glass-like carbon deformed molded article, process for producing the same, and joint structure for jointing a connecting member to a glass-like carbon hollow molded article
JPH03153575A (ja) セラミックマトリックス複合物の製造方法
JPS58204836A (ja) ガラスフアイバ光導波体の製造方法
US20220401952A1 (en) Fabrication of flow reactor modules and modules produced
EP0249936A2 (fr) Procédé de moulage de poudre
US5194268A (en) Apparatus for injection molding a ceramic greenware composite without knit lines
CA2460996A1 (fr) Procede et appareil de fabrication de nacelle en silicium, tuyaux en silicium et autre element au silicium
CN112341213B (zh) 一种小尺寸圆截面陶瓷基复合材料构件熔融渗硅方法
CN112457027B (zh) 大尺寸圆截面陶瓷基复合材料构件熔融渗硅工装及方法
EP2150490B1 (fr) Procédé de fabrication d'un matériau nanocomposite métal-carbone
US5098620A (en) Method of injection molding ceramic greenward composites without knit lines
WO2002040744A1 (fr) Fabrication au laser d'elements ceramiques
US5125822A (en) Apparatus for the production of ceramic articles
KR100958097B1 (ko) 연속 공정에 의한 반응소결 탄화규소 다공체의 제조 방법
US20220314488A1 (en) Methods of fabrication of ceramic mirror blanks
RU2665775C1 (ru) Способ получения изделий сложной формы на основе углеродных синтактных пеноматериалов и установка для осуществления способа
EP4313910A1 (fr) Fabrication de dispositifs fluidiques et dispositifs fluidiques produits

Legal Events

Date Code Title Description
FZDE Discontinued