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AU2683995A - Process for producing micromechanical structures by means of reactive ion etching - Google Patents

Process for producing micromechanical structures by means of reactive ion etching

Info

Publication number
AU2683995A
AU2683995A AU26839/95A AU2683995A AU2683995A AU 2683995 A AU2683995 A AU 2683995A AU 26839/95 A AU26839/95 A AU 26839/95A AU 2683995 A AU2683995 A AU 2683995A AU 2683995 A AU2683995 A AU 2683995A
Authority
AU
Australia
Prior art keywords
reactive ion
ion etching
micromechanical structures
producing micromechanical
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU26839/95A
Inventor
Meint Jelle De Boer
Job Elders
Michael Curt Elwenspoek
Johannes Hermanus Josephus Fluitman
Henricus Venantius Jansen
Rob Legtenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stichting voor de Technische Wetenschappen STW
Original Assignee
Stichting voor de Technische Wetenschappen STW
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stichting voor de Technische Wetenschappen STW filed Critical Stichting voor de Technische Wetenschappen STW
Publication of AU2683995A publication Critical patent/AU2683995A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0055—Manufacturing logistics
    • B81C99/0065—Process control; Yield prediction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0138—Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
AU26839/95A 1994-09-02 1995-06-22 Process for producing micromechanical structures by means of reactive ion etching Abandoned AU2683995A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP94202519 1994-09-02
EP94202519 1994-09-02
PCT/NL1995/000221 WO1996008036A1 (en) 1994-09-02 1995-06-22 Process for producing micromechanical structures by means of reactive ion etching

Publications (1)

Publication Number Publication Date
AU2683995A true AU2683995A (en) 1996-03-27

Family

ID=8217159

Family Applications (1)

Application Number Title Priority Date Filing Date
AU26839/95A Abandoned AU2683995A (en) 1994-09-02 1995-06-22 Process for producing micromechanical structures by means of reactive ion etching

Country Status (2)

Country Link
AU (1) AU2683995A (en)
WO (1) WO1996008036A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6316796B1 (en) 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
NL1006118C2 (en) * 1997-05-24 1998-11-25 Koninkl Grolsch N V Device for filtering a fermented liquid.
US6103585A (en) * 1998-06-09 2000-08-15 Siemens Aktiengesellschaft Method of forming deep trench capacitors
GB9819821D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
WO2000017095A1 (en) * 1998-09-24 2000-03-30 Infineon Technologies Ag Control structure for producing hollow spaces and/or undercut zones in micromechanical and/or microelectronic components
DE19847455A1 (en) * 1998-10-15 2000-04-27 Bosch Gmbh Robert Silicon multi-layer etching, especially for micromechanical sensor production, comprises etching trenches down to buried separation layer, etching exposed separation layer and etching underlying silicon layer
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
WO2002029858A2 (en) * 2000-09-29 2002-04-11 Infineon Technologies North America Corp. Deep trench etching method to reduce/eliminate formation of black silicon
EP1220010A3 (en) * 2000-12-29 2004-10-27 Texas Instruments Incorporated Micromechanical device recoat methods
DE10105187A1 (en) * 2001-02-06 2002-08-08 Bosch Gmbh Robert Method for generating surface micromechanical structures and sensor
GB0128617D0 (en) * 2001-11-29 2002-01-23 Denselight Semiconductors Pte Self-aligned v-groove and deep trench etching of semiconductors
KR100416266B1 (en) * 2001-12-18 2004-01-24 삼성전자주식회사 MEMS structure having a blocked-sacrificial layer support/anchor and a fabrication method of the same
DE10235371A1 (en) 2002-08-02 2004-02-12 Robert Bosch Gmbh Production of a micromechanical device used in integrated optical arrangements comprises preparing an SOI or EOI substrate having a silicon functional layer, forming a trench extending through the functional layer, and further processing
US6946362B2 (en) 2002-09-06 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus for forming high surface area material films and membranes
EP1682444A2 (en) 2003-10-31 2006-07-26 Koninklijke Philips Electronics N.V. A method of manufacturing an electronic device and electronic device
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
WO2007042521A2 (en) * 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
DE102005048366A1 (en) 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag A process for the preparation of low-defect self-organized needle-like structures with nano-dimensions in the range below the usual light wavelengths with high aspect ratio
WO2007051312A1 (en) 2005-11-07 2007-05-10 Fibics Incorporated Apparatus and method for surface modification using charged particle beams
EP1786027A3 (en) * 2005-11-14 2009-03-04 Schott AG Plasma etching of tapered structures
RU2648287C1 (en) * 2016-12-27 2018-03-23 Акционерное общество "Научно-исследовательский институт физических измерений" Method of manufacture of elastic elements of micromechanical sensors
RU2662499C1 (en) * 2017-09-01 2018-07-26 Общество ограниченной ответственности "Игла" Micro-mechanical elements from the mono-crystalline silicon plates manufacturing method
RU2695771C1 (en) * 2018-12-29 2019-07-25 Общество с ограниченной ответственностью "Игла" Method for manufacture of microneedle in integral version with internal channels
DE102019126750A1 (en) * 2019-10-04 2021-04-08 Photonik-Zentrum Kaiserslautern e.V. Structuring a surface of an active optical material
CN112768348B (en) * 2021-01-18 2022-05-20 复旦大学 Optimization method for etching lithium niobate material and improving side wall angle
CN114879458A (en) * 2022-05-31 2022-08-09 上海稷以科技有限公司 Method for improving release efficiency of sacrificial layer of resonant cavity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666555A (en) * 1985-08-23 1987-05-19 Intel Corporation Plasma etching of silicon using fluorinated gas mixtures
JPH0793291B2 (en) * 1986-12-19 1995-10-09 アプライド マテリアルズインコーポレーテッド Bromine and iodine etching method for silicon and silicide
US4968585A (en) * 1989-06-20 1990-11-06 The Board Of Trustees Of The Leland Stanford Jr. University Microfabricated cantilever stylus with integrated conical tip
EP0413040B1 (en) * 1989-08-16 1992-12-16 International Business Machines Corporation Method of producing ultrafine silicon tips for the afm/stm profilometry
US5201992A (en) * 1990-07-12 1993-04-13 Bell Communications Research, Inc. Method for making tapered microminiature silicon structures
JP3094470B2 (en) * 1991-01-22 2000-10-03 ソニー株式会社 Dry etching method
JP2913936B2 (en) * 1991-10-08 1999-06-28 日本電気株式会社 Method for manufacturing semiconductor device
US5198390A (en) * 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
DE4317623C2 (en) * 1993-05-27 2003-08-21 Bosch Gmbh Robert Method and device for anisotropic plasma etching of substrates and their use

Also Published As

Publication number Publication date
WO1996008036A1 (en) 1996-03-14

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