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AU2003263776A8 - A system and method for determining a cross sectional feature of a structural element having a sub-micron cross section - Google Patents

A system and method for determining a cross sectional feature of a structural element having a sub-micron cross section

Info

Publication number
AU2003263776A8
AU2003263776A8 AU2003263776A AU2003263776A AU2003263776A8 AU 2003263776 A8 AU2003263776 A8 AU 2003263776A8 AU 2003263776 A AU2003263776 A AU 2003263776A AU 2003263776 A AU2003263776 A AU 2003263776A AU 2003263776 A8 AU2003263776 A8 AU 2003263776A8
Authority
AU
Australia
Prior art keywords
cross
sub
determining
section
structural element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003263776A
Other versions
AU2003263776A1 (en
Inventor
Ophir Dror
Aviram Tam
Ovadya Menadeva
Roman Kris
Benzion Sender
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Applied Materials Inc
Original Assignee
Applied Materials Israel Ltd
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd, Applied Materials Inc filed Critical Applied Materials Israel Ltd
Publication of AU2003263776A1 publication Critical patent/AU2003263776A1/en
Publication of AU2003263776A8 publication Critical patent/AU2003263776A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2816—Length

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2003263776A 2002-07-11 2003-07-11 Method and apparatus for measuring critical dimensions with a particle beam Abandoned AU2003263776A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39486402P 2002-07-11 2002-07-11
US60/394,864 2002-07-11
PCT/US2003/021690 WO2004008255A2 (en) 2002-07-11 2003-07-11 Method and apparatus for measuring critical dimensions with a particle beam

Publications (2)

Publication Number Publication Date
AU2003263776A1 AU2003263776A1 (en) 2004-02-02
AU2003263776A8 true AU2003263776A8 (en) 2004-02-02

Family

ID=30115781

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003263776A Abandoned AU2003263776A1 (en) 2002-07-11 2003-07-11 Method and apparatus for measuring critical dimensions with a particle beam

Country Status (6)

Country Link
EP (1) EP1523671A2 (en)
JP (1) JP4493495B2 (en)
KR (1) KR101057554B1 (en)
CN (1) CN1668915B (en)
AU (1) AU2003263776A1 (en)
WO (1) WO2004008255A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005008768A2 (en) * 2003-07-11 2005-01-27 Applied Materials Israel, Ltd. A system and method for determining a cross sectional feature of a structural element using a reference structural element
DE102004004597B4 (en) * 2004-01-29 2008-08-07 Qimonda Ag Method for measuring a structure on a semiconductor wafer with a scanning electron microscope
DE102004021442A1 (en) * 2004-04-28 2005-11-24 Infineon Technologies Ag Process for measuring the characteristics of a structure especially on a mask or wafer in semiconductor technology scans the structure in rows in at least two different directions
CN102569114B (en) * 2010-12-17 2014-08-27 无锡华润上华半导体有限公司 Metal lead size monitoring method
CN103065992A (en) * 2012-12-14 2013-04-24 上海集成电路研发中心有限公司 Semiconductor surface structure side wall characterization method
CN107978536A (en) * 2016-10-25 2018-05-01 中芯国际集成电路制造(上海)有限公司 The CDSEM scan methods of pattern in a kind of wafer domain
US10438769B1 (en) 2018-05-02 2019-10-08 Kla-Tencor Corporation Array-based characterization tool
WO2020237105A1 (en) * 2019-05-21 2020-11-26 Applied Materials, Inc. Enhanced cross sectional features measurement methodology
CN111199895B (en) * 2020-01-02 2022-07-15 长江存储科技有限责任公司 Method, device, server and readable storage medium for measuring channel

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128114A (en) 1984-11-27 1986-06-16 Toshiba Corp Evaluation of surface shape of pattern
JPH0621784B2 (en) * 1984-12-10 1994-03-23 株式会社日立製作所 Pattern shape evaluation device
JPH0727943B2 (en) * 1986-12-22 1995-03-29 三菱電機株式会社 Semiconductor pattern shape evaluation device
JPH0663758B2 (en) * 1987-10-14 1994-08-22 株式会社東芝 Pattern measurement method
JPH01311551A (en) * 1988-06-08 1989-12-15 Toshiba Corp Pattern shape measuring device
JPH07111336B2 (en) * 1990-02-07 1995-11-29 株式会社東芝 Pattern dimension measuring method and device
JPH07111335B2 (en) * 1990-02-07 1995-11-29 株式会社東芝 Pattern shape measuring method and apparatus
KR100489911B1 (en) * 1999-12-14 2005-05-17 어플라이드 머티어리얼스, 인코포레이티드 Method and system for the examination of specimen using a charged particle beam
US6472662B1 (en) * 2000-08-30 2002-10-29 International Business Machines Corporation Automated method for determining several critical dimension properties from scanning electron microscope by using several tilted beam or sample scans
US6670612B1 (en) * 2002-07-01 2003-12-30 Kla-Tencor Technologies Corporation Undercut measurement using SEM
WO2005008768A2 (en) * 2003-07-11 2005-01-27 Applied Materials Israel, Ltd. A system and method for determining a cross sectional feature of a structural element using a reference structural element

Also Published As

Publication number Publication date
KR20060084787A (en) 2006-07-25
AU2003263776A1 (en) 2004-02-02
WO2004008255A2 (en) 2004-01-22
EP1523671A2 (en) 2005-04-20
JP4493495B2 (en) 2010-06-30
CN1668915A (en) 2005-09-14
WO2004008255A3 (en) 2004-06-10
WO2004008255A8 (en) 2004-07-22
JP2005533252A (en) 2005-11-04
CN1668915B (en) 2011-06-15
KR101057554B1 (en) 2011-08-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase