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AU2002220164A1 - Planar structure and methods of fabricating non-volatile memory devices - Google Patents

Planar structure and methods of fabricating non-volatile memory devices

Info

Publication number
AU2002220164A1
AU2002220164A1 AU2002220164A AU2016402A AU2002220164A1 AU 2002220164 A1 AU2002220164 A1 AU 2002220164A1 AU 2002220164 A AU2002220164 A AU 2002220164A AU 2016402 A AU2016402 A AU 2016402A AU 2002220164 A1 AU2002220164 A1 AU 2002220164A1
Authority
AU
Australia
Prior art keywords
methods
volatile memory
memory devices
planar structure
fabricating non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002220164A
Inventor
Narbeh Derhacobian
Mark T. Ramsbey
David M. Rogers
Hidehiko Shiraiwa
Ravi Sunkavalli
Michael A. Van Buskirk
Janet Wang
Yider Wu
Jean Y. Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Advanced Micro Devices Inc
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/723,635 external-priority patent/US6465306B1/en
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of AU2002220164A1 publication Critical patent/AU2002220164A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
AU2002220164A 2000-11-28 2001-11-15 Planar structure and methods of fabricating non-volatile memory devices Abandoned AU2002220164A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09723635 2000-11-28
US09/723,635 US6465306B1 (en) 2000-11-28 2000-11-28 Simultaneous formation of charge storage and bitline to wordline isolation
US09/893,026 US6541816B2 (en) 2000-11-28 2001-06-27 Planar structure for non-volatile memory devices
US09893026 2001-06-27
PCT/US2001/046124 WO2002045171A1 (en) 2000-11-28 2001-11-15 Planar structure and methods of fabricating non-volatile memory devices

Publications (1)

Publication Number Publication Date
AU2002220164A1 true AU2002220164A1 (en) 2002-06-11

Family

ID=27110840

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002220164A Abandoned AU2002220164A1 (en) 2000-11-28 2001-11-15 Planar structure and methods of fabricating non-volatile memory devices

Country Status (4)

Country Link
EP (1) EP1338037B1 (en)
AU (1) AU2002220164A1 (en)
TW (1) TW518726B (en)
WO (1) WO2002045171A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10246343B4 (en) * 2002-10-04 2007-02-08 Infineon Technologies Ag Method for producing a semiconductor memory cell array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168334A (en) 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
JPH06291330A (en) * 1993-03-31 1994-10-18 Citizen Watch Co Ltd Semiconductor non-volatile memory element and preparation thereof
JP3424427B2 (en) 1995-07-27 2003-07-07 ソニー株式会社 Nonvolatile semiconductor memory device
US6117730A (en) 1999-10-25 2000-09-12 Advanced Micro Devices, Inc. Integrated method by using high temperature oxide for top oxide and periphery gate oxide

Also Published As

Publication number Publication date
WO2002045171A1 (en) 2002-06-06
EP1338037B1 (en) 2011-03-30
TW518726B (en) 2003-01-21
EP1338037A1 (en) 2003-08-27

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