AU2002217845A1 - Microelectronic package having improved light extraction - Google Patents
Microelectronic package having improved light extractionInfo
- Publication number
- AU2002217845A1 AU2002217845A1 AU2002217845A AU1784502A AU2002217845A1 AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1 AU 2002217845 A AU2002217845 A AU 2002217845A AU 1784502 A AU1784502 A AU 1784502A AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1
- Authority
- AU
- Australia
- Prior art keywords
- light extraction
- microelectronic package
- improved light
- microelectronic
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000605 extraction Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24931100P | 2000-11-16 | 2000-11-16 | |
US60249311 | 2000-11-16 | ||
PCT/US2001/044047 WO2002041406A1 (en) | 2000-11-16 | 2001-11-14 | Microelectronic package having improved light extraction |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002217845A1 true AU2002217845A1 (en) | 2002-05-27 |
Family
ID=22942928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002217845A Abandoned AU2002217845A1 (en) | 2000-11-16 | 2001-11-14 | Microelectronic package having improved light extraction |
Country Status (3)
Country | Link |
---|---|
US (1) | US7023022B2 (en) |
AU (1) | AU2002217845A1 (en) |
WO (1) | WO2002041406A1 (en) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878969B2 (en) * | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
DE10234977A1 (en) * | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting thin layer semiconductor component comprises a multiple layer structure based on gallium nitride containing an active radiation-producing layer and having a first main surface and a second main surface |
KR100499129B1 (en) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | Light emitting laser diode and fabricatin method thereof |
US7083993B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US7262550B2 (en) * | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
US7098589B2 (en) | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US7193784B2 (en) * | 2003-05-20 | 2007-03-20 | Kansas State University Research Foundation | Nitride microlens |
CN100383639C (en) * | 2003-09-06 | 2008-04-23 | 鸿富锦精密工业(深圳)有限公司 | Back-to-light module |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
JP4232585B2 (en) * | 2003-09-17 | 2009-03-04 | 豊田合成株式会社 | Light emitting device |
CN100383637C (en) * | 2003-09-26 | 2008-04-23 | 鸿富锦精密工业(深圳)有限公司 | LED Light Source and backlight modular |
US8604497B2 (en) | 2003-09-26 | 2013-12-10 | Osram Opto Semiconductors Gmbh | Radiation-emitting thin-film semiconductor chip |
JP4160597B2 (en) * | 2004-01-07 | 2008-10-01 | 浜松ホトニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP4116587B2 (en) | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP4397728B2 (en) * | 2004-04-21 | 2010-01-13 | 日東電工株式会社 | Direct type backlight |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US20090023239A1 (en) * | 2004-07-22 | 2009-01-22 | Luminus Devices, Inc. | Light emitting device processes |
JP2006100787A (en) | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | Light emitting device and light emitting element |
GB2417825B (en) * | 2004-09-04 | 2006-11-22 | Arima Optoelectronics Corp | Light emitting diode with diffraction lattice |
US7459345B2 (en) * | 2004-10-20 | 2008-12-02 | Mutual-Pak Technology Co., Ltd. | Packaging method for an electronic element |
US20080296589A1 (en) * | 2005-03-24 | 2008-12-04 | Ingo Speier | Solid-State Lighting Device Package |
WO2006105638A1 (en) * | 2005-04-05 | 2006-10-12 | Tir Systems Ltd. | Electronic device package with an integrated evaporator |
JP2006324324A (en) * | 2005-05-17 | 2006-11-30 | Sumitomo Electric Ind Ltd | Light emitting device, method of manufacturing same, and semiconductor substrate |
TWI371871B (en) | 2006-12-29 | 2012-09-01 | Ind Tech Res Inst | A led chip with micro lens |
US7348603B2 (en) | 2005-10-17 | 2008-03-25 | Luminus Devices, Inc. | Anisotropic collimation devices and related methods |
US7391059B2 (en) | 2005-10-17 | 2008-06-24 | Luminus Devices, Inc. | Isotropic collimation devices and related methods |
US7388233B2 (en) | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
US7375379B2 (en) * | 2005-12-19 | 2008-05-20 | Philips Limileds Lighting Company, Llc | Light-emitting device |
US7682850B2 (en) * | 2006-03-17 | 2010-03-23 | Philips Lumileds Lighting Company, Llc | White LED for backlight with phosphor plates |
US8080828B2 (en) * | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
US7626210B2 (en) * | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
US7906794B2 (en) | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
US20080121902A1 (en) * | 2006-09-07 | 2008-05-29 | Gelcore Llc | Small footprint high power light emitting package with plurality of light emitting diode chips |
WO2008052327A1 (en) * | 2006-10-31 | 2008-05-08 | Tir Technology Lp | Lighting device package |
US8110838B2 (en) | 2006-12-08 | 2012-02-07 | Luminus Devices, Inc. | Spatial localization of light-generating portions in LEDs |
CN101226974B (en) * | 2007-01-18 | 2011-01-05 | 财团法人工业技术研究院 | Light emitting diode chip with microscope body structure |
US7446385B2 (en) * | 2007-03-02 | 2008-11-04 | Micron Technology, Inc. | Methods of fabricating optical packages, systems comprising the same, and their uses |
KR20090127344A (en) | 2007-03-08 | 2009-12-10 | 센서즈 포 메드슨 앤드 사이언스 인코포레이티드 | Light emitting diode for harsh environnments |
DE102007019776A1 (en) * | 2007-04-26 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing a plurality of optoelectronic components |
US9046634B2 (en) * | 2007-06-14 | 2015-06-02 | Philips Lumileds Lighting Company, Llc | Thin flash or video recording light using low profile side emitting LED |
US20090008662A1 (en) * | 2007-07-05 | 2009-01-08 | Ian Ashdown | Lighting device package |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
DE102007041852A1 (en) * | 2007-09-03 | 2009-03-05 | Osram Opto Semiconductors Gmbh | High power LED module, has semicircular hollow portion extending into transparent carrier on side of LED and having evaporable cooling agent, and electrode structures provided in transparent carrier |
DE102007058453A1 (en) * | 2007-09-10 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting device |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
TWM401210U (en) * | 2010-09-29 | 2011-04-01 | Forward Electronics Co Ltd | Light-emitting diode packaging structure |
CN102130285B (en) * | 2010-11-03 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | Light emitting diode and manufacturing method thereof |
WO2014108782A1 (en) | 2013-01-09 | 2014-07-17 | Koninklijke Philips N.V. | Shaped cavity in substrate of a chip scale package led |
WO2014108821A1 (en) * | 2013-01-10 | 2014-07-17 | Koninklijke Philips N.V. | Led with shaped growth substrate for side emission |
US10006615B2 (en) | 2014-05-30 | 2018-06-26 | Oelo, LLC | Lighting system and method of use |
US11101247B2 (en) | 2015-10-08 | 2021-08-24 | Nichia Corporation | Light-emitting device, integrated light-emitting device, and light-emitting module |
JP6506899B2 (en) * | 2015-10-08 | 2019-04-24 | 日亜化学工業株式会社 | Light emitting device, integrated light emitting device and light emitting module |
CN205944139U (en) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | Ultraviolet ray light -emitting diode spare and contain this emitting diode module |
US11430919B2 (en) * | 2019-04-26 | 2022-08-30 | Lumileds Llc | High brightness LEDs with non-specular nanostructured thin film reflectors |
US11757074B2 (en) | 2020-06-12 | 2023-09-12 | Apple Inc. | Light-emitting diode display pixels with microlens stacks over light-emitting diodes |
CN112968092A (en) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light emitting device, manufacturing method thereof and display panel with light emitting device |
CN113644058B (en) * | 2021-08-11 | 2022-06-28 | 福建兆元光电有限公司 | Backlight type Mini LED chip and manufacturing method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974687A (en) | 1982-10-21 | 1984-04-27 | Idec Izumi Corp | Light emitting diode lamp |
JPH0316279A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Ltd | Light emitting diode element and manufacture thereof |
US5432358A (en) | 1994-03-24 | 1995-07-11 | Motorola, Inc. | Integrated electro-optical package |
US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP3436009B2 (en) | 1996-07-31 | 2003-08-11 | 住友電気工業株式会社 | Optical semiconductor device |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JPH10294491A (en) * | 1997-04-22 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and light-emitting device |
JP3785820B2 (en) * | 1998-08-03 | 2006-06-14 | 豊田合成株式会社 | Light emitting device |
-
2001
- 2001-11-14 AU AU2002217845A patent/AU2002217845A1/en not_active Abandoned
- 2001-11-14 US US10/416,996 patent/US7023022B2/en not_active Expired - Fee Related
- 2001-11-14 WO PCT/US2001/044047 patent/WO2002041406A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US7023022B2 (en) | 2006-04-04 |
WO2002041406A1 (en) | 2002-05-23 |
US20040065886A1 (en) | 2004-04-08 |
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