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AU2002217845A1 - Microelectronic package having improved light extraction - Google Patents

Microelectronic package having improved light extraction

Info

Publication number
AU2002217845A1
AU2002217845A1 AU2002217845A AU1784502A AU2002217845A1 AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1 AU 2002217845 A AU2002217845 A AU 2002217845A AU 1784502 A AU1784502 A AU 1784502A AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1
Authority
AU
Australia
Prior art keywords
light extraction
microelectronic package
improved light
microelectronic
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002217845A
Inventor
Ivan Eliashevich
Robert F. Karlicek Jr.
Hari Venugopalan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Emcore Corp
Original Assignee
Emcore Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp filed Critical Emcore Corp
Publication of AU2002217845A1 publication Critical patent/AU2002217845A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
AU2002217845A 2000-11-16 2001-11-14 Microelectronic package having improved light extraction Abandoned AU2002217845A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24931100P 2000-11-16 2000-11-16
US60249311 2000-11-16
PCT/US2001/044047 WO2002041406A1 (en) 2000-11-16 2001-11-14 Microelectronic package having improved light extraction

Publications (1)

Publication Number Publication Date
AU2002217845A1 true AU2002217845A1 (en) 2002-05-27

Family

ID=22942928

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002217845A Abandoned AU2002217845A1 (en) 2000-11-16 2001-11-14 Microelectronic package having improved light extraction

Country Status (3)

Country Link
US (1) US7023022B2 (en)
AU (1) AU2002217845A1 (en)
WO (1) WO2002041406A1 (en)

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KR100499129B1 (en) * 2002-09-02 2005-07-04 삼성전기주식회사 Light emitting laser diode and fabricatin method thereof
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7193784B2 (en) * 2003-05-20 2007-03-20 Kansas State University Research Foundation Nitride microlens
CN100383639C (en) * 2003-09-06 2008-04-23 鸿富锦精密工业(深圳)有限公司 Back-to-light module
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
JP4232585B2 (en) * 2003-09-17 2009-03-04 豊田合成株式会社 Light emitting device
CN100383637C (en) * 2003-09-26 2008-04-23 鸿富锦精密工业(深圳)有限公司 LED Light Source and backlight modular
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip
JP4160597B2 (en) * 2004-01-07 2008-10-01 浜松ホトニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4116587B2 (en) 2004-04-13 2008-07-09 浜松ホトニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4397728B2 (en) * 2004-04-21 2010-01-13 日東電工株式会社 Direct type backlight
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
JP2006100787A (en) 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd Light emitting device and light emitting element
GB2417825B (en) * 2004-09-04 2006-11-22 Arima Optoelectronics Corp Light emitting diode with diffraction lattice
US7459345B2 (en) * 2004-10-20 2008-12-02 Mutual-Pak Technology Co., Ltd. Packaging method for an electronic element
US20080296589A1 (en) * 2005-03-24 2008-12-04 Ingo Speier Solid-State Lighting Device Package
WO2006105638A1 (en) * 2005-04-05 2006-10-12 Tir Systems Ltd. Electronic device package with an integrated evaporator
JP2006324324A (en) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd Light emitting device, method of manufacturing same, and semiconductor substrate
TWI371871B (en) 2006-12-29 2012-09-01 Ind Tech Res Inst A led chip with micro lens
US7348603B2 (en) 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US7388233B2 (en) 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US7375379B2 (en) * 2005-12-19 2008-05-20 Philips Limileds Lighting Company, Llc Light-emitting device
US7682850B2 (en) * 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
US7626210B2 (en) * 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
US7906794B2 (en) 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
US20080121902A1 (en) * 2006-09-07 2008-05-29 Gelcore Llc Small footprint high power light emitting package with plurality of light emitting diode chips
WO2008052327A1 (en) * 2006-10-31 2008-05-08 Tir Technology Lp Lighting device package
US8110838B2 (en) 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
CN101226974B (en) * 2007-01-18 2011-01-05 财团法人工业技术研究院 Light emitting diode chip with microscope body structure
US7446385B2 (en) * 2007-03-02 2008-11-04 Micron Technology, Inc. Methods of fabricating optical packages, systems comprising the same, and their uses
KR20090127344A (en) 2007-03-08 2009-12-10 센서즈 포 메드슨 앤드 사이언스 인코포레이티드 Light emitting diode for harsh environnments
DE102007019776A1 (en) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing a plurality of optoelectronic components
US9046634B2 (en) * 2007-06-14 2015-06-02 Philips Lumileds Lighting Company, Llc Thin flash or video recording light using low profile side emitting LED
US20090008662A1 (en) * 2007-07-05 2009-01-08 Ian Ashdown Lighting device package
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
DE102007041852A1 (en) * 2007-09-03 2009-03-05 Osram Opto Semiconductors Gmbh High power LED module, has semicircular hollow portion extending into transparent carrier on side of LED and having evaporable cooling agent, and electrode structures provided in transparent carrier
DE102007058453A1 (en) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Radiation-emitting device
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
TWM401210U (en) * 2010-09-29 2011-04-01 Forward Electronics Co Ltd Light-emitting diode packaging structure
CN102130285B (en) * 2010-11-03 2012-12-26 映瑞光电科技(上海)有限公司 Light emitting diode and manufacturing method thereof
WO2014108782A1 (en) 2013-01-09 2014-07-17 Koninklijke Philips N.V. Shaped cavity in substrate of a chip scale package led
WO2014108821A1 (en) * 2013-01-10 2014-07-17 Koninklijke Philips N.V. Led with shaped growth substrate for side emission
US10006615B2 (en) 2014-05-30 2018-06-26 Oelo, LLC Lighting system and method of use
US11101247B2 (en) 2015-10-08 2021-08-24 Nichia Corporation Light-emitting device, integrated light-emitting device, and light-emitting module
JP6506899B2 (en) * 2015-10-08 2019-04-24 日亜化学工業株式会社 Light emitting device, integrated light emitting device and light emitting module
CN205944139U (en) 2016-03-30 2017-02-08 首尔伟傲世有限公司 Ultraviolet ray light -emitting diode spare and contain this emitting diode module
US11430919B2 (en) * 2019-04-26 2022-08-30 Lumileds Llc High brightness LEDs with non-specular nanostructured thin film reflectors
US11757074B2 (en) 2020-06-12 2023-09-12 Apple Inc. Light-emitting diode display pixels with microlens stacks over light-emitting diodes
CN112968092A (en) * 2020-11-19 2021-06-15 重庆康佳光电技术研究院有限公司 Light emitting device, manufacturing method thereof and display panel with light emitting device
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Also Published As

Publication number Publication date
US7023022B2 (en) 2006-04-04
WO2002041406A1 (en) 2002-05-23
US20040065886A1 (en) 2004-04-08

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