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AU2001285834A1 - Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates - Google Patents

Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Info

Publication number
AU2001285834A1
AU2001285834A1 AU2001285834A AU8583401A AU2001285834A1 AU 2001285834 A1 AU2001285834 A1 AU 2001285834A1 AU 2001285834 A AU2001285834 A AU 2001285834A AU 8583401 A AU8583401 A AU 8583401A AU 2001285834 A1 AU2001285834 A1 AU 2001285834A1
Authority
AU
Australia
Prior art keywords
crystalline
deposition
substrates
layers
crystalline layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001285834A
Inventor
Holger Jurgensen
Johannes Kappeler
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2001285834A1 publication Critical patent/AU2001285834A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2001285834A 2000-09-01 2001-07-12 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates Abandoned AU2001285834A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10043597A DE10043597A1 (en) 2000-09-01 2000-09-01 Device for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043597 2000-09-01
PCT/EP2001/008038 WO2002018679A1 (en) 2000-09-01 2001-07-12 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Publications (1)

Publication Number Publication Date
AU2001285834A1 true AU2001285834A1 (en) 2002-03-13

Family

ID=7654972

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001285834A Abandoned AU2001285834A1 (en) 2000-09-01 2001-07-12 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

Country Status (6)

Country Link
US (1) US6905548B2 (en)
EP (1) EP1315853B1 (en)
AU (1) AU2001285834A1 (en)
DE (2) DE10043597A1 (en)
TW (1) TW527434B (en)
WO (1) WO2002018679A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043599A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates
DE10043597A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
JP4519037B2 (en) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 Heating device and coating / developing device
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842680A (en) * 1985-10-24 1989-06-27 Texas Instruments Incorporated Advanced vacuum processor
US5027464A (en) 1990-01-05 1991-07-02 Aar Corporation Container dumping system
FR2679154B1 (en) * 1991-07-15 1993-11-12 France Telecom DEVICE FOR INJECTING A PRODUCT INTO AN ENCLOSURE SUCH AS A MICROELECTRONIC REACTOR.
EP0763148B1 (en) * 1994-06-24 2002-01-16 Aixtron Gmbh Reactor and process for coating flat substrates
US5788777A (en) 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
DE19813523C2 (en) * 1998-03-26 2000-03-02 Aixtron Ag CVD reactor and its use
DE10043597A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on, in particular, crystalline substrates

Also Published As

Publication number Publication date
WO2002018679A1 (en) 2002-03-07
US20030217696A1 (en) 2003-11-27
DE10043597A1 (en) 2002-03-14
US6905548B2 (en) 2005-06-14
TW527434B (en) 2003-04-11
EP1315853A1 (en) 2003-06-04
DE50103659D1 (en) 2004-10-21
EP1315853B1 (en) 2004-09-15

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