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AU2001261385A1 - Method and apparatus for using scatterometry to perform feedback and feed-forward control - Google Patents

Method and apparatus for using scatterometry to perform feedback and feed-forward control

Info

Publication number
AU2001261385A1
AU2001261385A1 AU2001261385A AU6138501A AU2001261385A1 AU 2001261385 A1 AU2001261385 A1 AU 2001261385A1 AU 2001261385 A AU2001261385 A AU 2001261385A AU 6138501 A AU6138501 A AU 6138501A AU 2001261385 A1 AU2001261385 A1 AU 2001261385A1
Authority
AU
Australia
Prior art keywords
scatterometry
feed
forward control
perform feedback
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261385A
Inventor
Michael L. Miller
Anthony J. Toprac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001261385A1 publication Critical patent/AU2001261385A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2001261385A 2000-06-09 2001-05-09 Method and apparatus for using scatterometry to perform feedback and feed-forward control Abandoned AU2001261385A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/591,038 2000-06-09
US09/591,038 US6643557B1 (en) 2000-06-09 2000-06-09 Method and apparatus for using scatterometry to perform feedback and feed-forward control
US09591038 2000-06-09
PCT/US2001/015124 WO2001097279A2 (en) 2000-06-09 2001-05-09 Method and apparatus for using scatterometry to perform feedback and feed-forward control

Publications (1)

Publication Number Publication Date
AU2001261385A1 true AU2001261385A1 (en) 2001-12-24

Family

ID=24364782

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261385A Abandoned AU2001261385A1 (en) 2000-06-09 2001-05-09 Method and apparatus for using scatterometry to perform feedback and feed-forward control

Country Status (7)

Country Link
US (1) US6643557B1 (en)
EP (1) EP1297569A2 (en)
JP (1) JP2004503940A (en)
KR (1) KR100804284B1 (en)
AU (1) AU2001261385A1 (en)
TW (1) TW530319B (en)
WO (1) WO2001097279A2 (en)

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US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
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KR100811964B1 (en) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 Resist pattern forming apparatus and method thereof
US6304999B1 (en) * 2000-10-23 2001-10-16 Advanced Micro Devices, Inc. Method and apparatus for embedded process control framework in tool systems
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JP2005505929A (en) 2001-10-10 2005-02-24 アクセント オプティカル テクノロジーズ,インク. Determining the focal center by cross-sectional analysis
US6898596B2 (en) * 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
JP3839306B2 (en) * 2001-11-08 2006-11-01 株式会社ルネサステクノロジ Semiconductor device manufacturing method and manufacturing system
US6785009B1 (en) * 2002-02-28 2004-08-31 Advanced Micro Devices, Inc. Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same
US6985229B2 (en) * 2002-05-30 2006-01-10 Agere Systems, Inc. Overlay metrology using scatterometry profiling
US6912438B2 (en) * 2002-10-21 2005-06-28 Advanced Micro Devices, Inc. Using scatterometry to obtain measurements of in circuit structures
US6808953B2 (en) * 2002-12-31 2004-10-26 Robert Bosch Gmbh Gap tuning for surface micromachined structures in an epitaxial reactor
US6982043B1 (en) * 2003-03-05 2006-01-03 Advanced Micro Devices, Inc. Scatterometry with grating to observe resist removal rate during etch
US6766214B1 (en) * 2003-04-03 2004-07-20 Advanced Micro Devices, Inc. Adjusting a sampling rate based on state estimation results
US7119893B2 (en) * 2003-04-10 2006-10-10 Accent Optical Technologies, Inc. Determination of center of focus by parameter variability analysis
US6859746B1 (en) * 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
TWI248153B (en) * 2003-12-04 2006-01-21 Promos Technologies Inc Method of adjusting photo error for multi-product
DE102004009516B4 (en) * 2004-02-27 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Method and system for controlling a product parameter of a circuit element
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
CN100550299C (en) * 2004-11-16 2009-10-14 东京毅力科创株式会社 Exposure condition setting method, lining processor and computer program
JP2006147627A (en) * 2004-11-16 2006-06-08 Tokyo Electron Ltd Method of detecting synchronous precision of exposure device and method of detecting aberration
US7235414B1 (en) * 2005-03-01 2007-06-26 Advanced Micro Devices, Inc. Using scatterometry to verify contact hole opening during tapered bilayer etch
US20060261436A1 (en) * 2005-05-19 2006-11-23 Freescale Semiconductor, Inc. Electronic device including a trench field isolation region and a process for forming the same
KR100677988B1 (en) * 2005-12-28 2007-02-02 동부일렉트로닉스 주식회사 Apparatus and method for tuning an exposure energy in a photo equipment
US7875851B1 (en) * 2006-05-01 2011-01-25 Advanced Micro Devices, Inc. Advanced process control framework using two-dimensional image analysis
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US7525673B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Optimizing selected variables of an optical metrology system
US7763404B2 (en) * 2006-09-26 2010-07-27 Tokyo Electron Limited Methods and apparatus for changing the optical properties of resists
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
DE102007009901B4 (en) * 2007-02-28 2011-07-07 Globalfoundries Inc. A technique for patterning differently strained layers formed over transistors by improved etch control strategies
US7639351B2 (en) * 2007-03-20 2009-12-29 Tokyo Electron Limited Automated process control using optical metrology with a photonic nanojet
US7567353B2 (en) * 2007-03-28 2009-07-28 Tokyo Electron Limited Automated process control using optical metrology and photoresist parameters
US7372583B1 (en) * 2007-04-12 2008-05-13 Tokyo Electron Limited Controlling a fabrication tool using support vector machine
JP2010087459A (en) * 2008-09-08 2010-04-15 Toshiba Corp Device and method for identifying failure cause
JP2012212847A (en) 2011-03-24 2012-11-01 Toshiba Corp Manufacturing method of semiconductor device, manufacturing system, and adjusting device
CN103035478B (en) * 2011-09-30 2015-05-06 中芯国际集成电路制造(上海)有限公司 Back-end process control method of wafer
US9482519B2 (en) 2014-12-04 2016-11-01 Globalfoundries Inc. Measuring semiconductor device features using stepwise optical metrology
US9673112B2 (en) * 2015-02-13 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor fabrication with height control through active region profile
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production

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TW389949B (en) 1997-01-30 2000-05-11 Tokyo Electron Ltd Method and apparatus for coating and development of the photo-resist solution
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US5987398A (en) * 1998-04-30 1999-11-16 Sony Corporation Method and apparatus for statistical process control of machines and processes having non-constant mean of a response variable
EP0973068A3 (en) 1998-07-14 2001-05-30 Nova Measuring Instruments Limited Method and system for controlling the photolithography process
US6245584B1 (en) 1999-07-01 2001-06-12 Advanced Micro Devices Method for detecting adjustment error in photolithographic stepping printer
US6051348A (en) 1999-08-17 2000-04-18 Advanced Micro Devices Method for detecting malfunction in photolithographic fabrication track
US6304999B1 (en) * 2000-10-23 2001-10-16 Advanced Micro Devices, Inc. Method and apparatus for embedded process control framework in tool systems
US6433878B1 (en) 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6650422B2 (en) 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6597447B1 (en) * 2001-07-31 2003-07-22 Advanced Micro Devices, Inc. Method and apparatus for periodic correction of metrology data

Also Published As

Publication number Publication date
JP2004503940A (en) 2004-02-05
KR20030007935A (en) 2003-01-23
EP1297569A2 (en) 2003-04-02
US6643557B1 (en) 2003-11-04
WO2001097279A2 (en) 2001-12-20
TW530319B (en) 2003-05-01
WO2001097279A3 (en) 2002-07-11
KR100804284B1 (en) 2008-02-18

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