AU2001261092A1 - Polishing slurries for copper and associated materials - Google Patents

Polishing slurries for copper and associated materials

Info

Publication number: AU2001261092A1
Authority: AU; Australia
Prior art keywords: copper; polishing slurries; associated materials; slurries; materials
Prior art date: 2000-05-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2001261092A

Inventor

Thomas H. Baum

Long Nguyen

Cary Regulski

William A. Wojtczak

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Advanced Technology Materials Inc

Original Assignee

Advanced Technology Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-05-01

Filing date

2001-04-27

Publication date

2001-11-12

2001-04-27 Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc

2001-11-12 Publication of AU2001261092A1 publication Critical patent/AU2001261092A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Mechanical Treatment Of Semiconductor (AREA)

AU2001261092A 2000-05-01 2001-04-27 Polishing slurries for copper and associated materials Abandoned AU2001261092A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US09/562,298 US6409781B1 (en)	2000-05-01	2000-05-01	Polishing slurries for copper and associated materials
US09562298		2000-05-01
PCT/US2001/013896 WO2001083638A1 (en)	2000-05-01	2001-04-27	Polishing slurries for copper and associated materials

Publications (1)

Publication Number	Publication Date
AU2001261092A1 true AU2001261092A1 (en)	2001-11-12

Family

ID=24245681

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2001261092A Abandoned AU2001261092A1 (en)	2000-05-01	2001-04-27	Polishing slurries for copper and associated materials

Country Status (3)

Country	Link
US (4)	US6409781B1 (en)
AU (1)	AU2001261092A1 (en)
WO (1)	WO2001083638A1 (en)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW501197B (en)	1999-08-17	2002-09-01	Hitachi Chemical Co Ltd	Polishing compound for chemical mechanical polishing and method for polishing substrate
US6881674B2 (en) *	1999-12-28	2005-04-19	Intel Corporation	Abrasives for chemical mechanical polishing
US6409781B1 (en) *	2000-05-01	2002-06-25	Advanced Technology Materials, Inc.	Polishing slurries for copper and associated materials
KR100481651B1 (en) *	2000-08-21	2005-04-08	가부시끼가이샤 도시바	Slurry for chemical mechanical polishing and method for manufacturing semiconductor device
US6602117B1 (en) *	2000-08-30	2003-08-05	Micron Technology, Inc.	Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6551935B1 (en) *	2000-08-31	2003-04-22	Micron Technology, Inc.	Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6468137B1 (en) *	2000-09-07	2002-10-22	Cabot Microelectronics Corporation	Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
US6709316B1 (en) *	2000-10-27	2004-03-23	Applied Materials, Inc.	Method and apparatus for two-step barrier layer polishing
US6524167B1 (en)	2000-10-27	2003-02-25	Applied Materials, Inc.	Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20030104770A1 (en) *	2001-04-30	2003-06-05	Arch Specialty Chemicals, Inc.	Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US7008554B2 (en) *	2001-07-13	2006-03-07	Applied Materials, Inc.	Dual reduced agents for barrier removal in chemical mechanical polishing
US7104869B2 (en) *	2001-07-13	2006-09-12	Applied Materials, Inc.	Barrier removal at low polish pressure
US7029373B2 (en) *	2001-08-14	2006-04-18	Advanced Technology Materials, Inc.	Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) *	2001-08-23	2004-10-05	Advanced Technology Materials, Inc.	Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
FR2835844B1 (en) *	2002-02-13	2006-12-15	Clariant	PROCESS FOR THE MECANO-CHEMICAL POLISHING OF METAL SUBSTRATES
JP2003311540A (en) *	2002-04-30	2003-11-05	Sony Corp	Electrolytic polishing liquid, electrolytic polishing method and method for producing semiconductor device
US6555477B1 (en) *	2002-05-22	2003-04-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Method for preventing Cu CMP corrosion
TWI282360B (en) *	2002-06-03	2007-06-11	Hitachi Chemical Co Ltd	Polishing composition and polishing method thereof
US20040077295A1 (en) *	2002-08-05	2004-04-22	Hellring Stuart D.	Process for reducing dishing and erosion during chemical mechanical planarization
KR20040043383A (en) *	2002-11-18	2004-05-24	주식회사 하이닉스반도체	Method for forming Cu wiring of semiconductor device
US7300602B2 (en) *	2003-01-23	2007-11-27	Rohm And Haas Electronic Materials Cmp Holdings, Inc.	Selective barrier metal polishing solution
US20040209066A1 (en) *	2003-04-17	2004-10-21	Swisher Robert G.	Polishing pad with window for planarization
US7253111B2 (en) *	2004-04-21	2007-08-07	Rohm And Haas Electronic Materials Cmp Holding, Inc.	Barrier polishing solution
EP1616926A1 (en)	2004-07-15	2006-01-18	Interuniversitair Microelektronica Centrum ( Imec)	Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals
US7291557B2 (en) *	2004-09-13	2007-11-06	Taiwan Semiconductor Manufacturing Company	Method for forming an interconnection structure for ic metallization
US20060089093A1 (en) *	2004-10-27	2006-04-27	Swisher Robert G	Polyurethane urea polishing pad
US20060089094A1 (en) *	2004-10-27	2006-04-27	Swisher Robert G	Polyurethane urea polishing pad
US20060089095A1 (en) *	2004-10-27	2006-04-27	Swisher Robert G	Polyurethane urea polishing pad
US20060110923A1 (en) *	2004-11-24	2006-05-25	Zhendong Liu	Barrier polishing solution
US7300876B2 (en) *	2004-12-14	2007-11-27	Sandisk 3D Llc	Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
WO2006073156A1 (en) *	2005-01-05	2006-07-13	Nitta Haas Incorporated	Polishing slurry
US7427362B2 (en) *	2005-01-26	2008-09-23	Rohm And Haas Electronic Materials Cmp Holdings, Inc.	Corrosion-resistant barrier polishing solution
EP1899111A2 (en) *	2005-06-06	2008-03-19	Advanced Technology Materials, Inc.	Integrated chemical mechanical polishing composition and process for single platen processing
WO2007019342A2 (en) *	2005-08-05	2007-02-15	Advanced Technology Materials, Inc.	High throughput chemical mechanical polishing composition for metal film planarization
US20070049009A1 (en) *	2005-08-30	2007-03-01	Chia-Lin Hsu	Method of manufacturing conductive layer
DE102006008689B4 (en) *	2006-02-24	2012-01-26	Lanxess Deutschland Gmbh	Polish and its use
US8551202B2 (en) *	2006-03-23	2013-10-08	Cabot Microelectronics Corporation	Iodate-containing chemical-mechanical polishing compositions and methods
US7837888B2 (en) *	2006-11-13	2010-11-23	Cabot Microelectronics Corporation	Composition and method for damascene CMP
US20100112728A1 (en) *	2007-03-31	2010-05-06	Advanced Technology Materials, Inc.	Methods for stripping material for wafer reclamation
JP2009050920A (en) *	2007-08-23	2009-03-12	Asahi Glass Co Ltd	Manufacturing method of glass substrate for magnetic disc
JP2009088486A (en) *	2007-08-29	2009-04-23	Applied Materials Inc	High throughput low topography copper cmp process
US7955520B2 (en)	2007-11-27	2011-06-07	Cabot Microelectronics Corporation	Copper-passivating CMP compositions and methods
US20090215266A1 (en) *	2008-02-22	2009-08-27	Thomas Terence M	Polishing Copper-Containing patterned wafers
CN101665661A (en) *	2008-09-05	2010-03-10	安集微电子科技(上海)有限公司	Application of amine compounds and chemical mechanical polishing solution
US8071479B2 (en)	2008-12-11	2011-12-06	Rohm And Haas Electronic Materials Cmp Holdings, Inc.	Chemical mechanical polishing composition and methods relating thereto
WO2012024603A2 (en)	2010-08-20	2012-02-23	Advanced Technology Materials, Inc.	Sustainable process for reclaiming precious metals and base metals from e-waste
KR101868319B1 (en)	2010-10-06	2018-06-15	엔테그리스, 아이엔씨.	Composition and process for selectively etching metal nitrides
CN102615584A (en) *	2011-01-31	2012-08-01	中芯国际集成电路制造(上海)有限公司	Chemical mechanical grinding method
JP5767898B2 (en) *	2011-08-12	2015-08-26	株式会社東芝	Manufacturing method of semiconductor device
US8865013B2 (en)	2011-08-15	2014-10-21	Rohm And Haas Electronic Materials Cmp Holdings, Inc.	Method for chemical mechanical polishing tungsten
JP5933950B2 (en)	2011-09-30	2016-06-15	アドバンスドテクノロジーマテリアルズ，インコーポレイテッド	Etching solution for copper or copper alloy
KR102118964B1 (en)	2012-12-05	2020-06-08	엔테그리스, 아이엔씨.	Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en)	2013-03-04	2014-09-12	Advanced Technology Materials, Inc.	Compositions and methods for selectively etching titanium nitride
WO2014197808A1 (en)	2013-06-06	2014-12-11	Advanced Technology Materials, Inc.	Compositions and methods for selectively etching titanium nitride
WO2015017659A1 (en)	2013-07-31	2015-02-05	Advanced Technology Materials, Inc.	AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
EP3039098B1 (en)	2013-08-30	2020-09-30	Entegris, Inc.	Compositions and methods for selectively etching titanium nitride
US10340150B2 (en)	2013-12-16	2019-07-02	Entegris, Inc.	Ni:NiGe:Ge selective etch formulations and method of using same
EP3084809A4 (en)	2013-12-20	2017-08-23	Entegris, Inc.	Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (en)	2013-12-31	2021-08-20	엔테그리스, 아이엔씨.	Formulations to selectively etch silicon and germanium
WO2015116818A1 (en)	2014-01-29	2015-08-06	Advanced Technology Materials, Inc.	Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en)	2014-02-05	2015-08-13	Advanced Technology Materials, Inc.	Non-amine post-cmp compositions and method of use
WO2018071285A1 (en) *	2016-10-11	2018-04-19	Fujifilm Planar Solutions, LLC	Elevated temperature cmp compositions and methods for use thereof
US10286518B2 (en) *	2017-01-31	2019-05-14	Rohm And Haas Electronic Materials Cmp Holdings, Inc.	Chemical mechanical polishing method for tungsten
EP3894494A1 (en) *	2018-12-12	2021-10-20	Basf Se	Chemical mechanical polishing of substrates containing copper and ruthenium

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5340370A (en)	1993-11-03	1994-08-23	Intel Corporation	Slurries for chemical mechanical polishing
JPH08223072A (en)	1995-02-09	1996-08-30	Matsushita Electric Ind Co Ltd	Radio equipment
US5676587A (en) *	1995-12-06	1997-10-14	International Business Machines Corporation	Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5858813A (en)	1996-05-10	1999-01-12	Cabot Corporation	Chemical mechanical polishing slurry for metal layers and films
JPH1022307A (en)	1996-07-05	1998-01-23	Toshiba Mechatronics Kk	Collet touch detecting mechanism of die bonder
WO1998004646A1 (en) *	1996-07-25	1998-02-05	Ekc Technology, Inc.	Chemical mechanical polishing composition and process
JP3507628B2 (en)	1996-08-06	2004-03-15	昭和電工株式会社	Polishing composition for chemical mechanical polishing
US5958288A (en)	1996-11-26	1999-09-28	Cabot Corporation	Composition and slurry useful for metal CMP
JPH10223072A (en)	1997-02-03	1998-08-21	Ngk Insulators Ltd	Polymer bushing suitable for pour-type mold forming
US5756398A (en)	1997-03-17	1998-05-26	Rodel, Inc.	Composition and method for polishing a composite comprising titanium
US5993685A (en)	1997-04-02	1999-11-30	Advanced Technology Materials	Planarization composition for removing metal films
US6045435A (en)	1997-08-04	2000-04-04	Motorola, Inc.	Low selectivity chemical mechanical polishing (CMP) process for use on integrated circuit metal interconnects
US6001730A (en)	1997-10-20	1999-12-14	Motorola, Inc.	Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5985748A (en)	1997-12-01	1999-11-16	Motorola, Inc.	Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6063306A (en)	1998-06-26	2000-05-16	Cabot Corporation	Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6083840A (en)	1998-11-25	2000-07-04	Arch Specialty Chemicals, Inc.	Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6409781B1 (en) *	2000-05-01	2002-06-25	Advanced Technology Materials, Inc.	Polishing slurries for copper and associated materials

2000
- 2000-05-01 US US09/562,298 patent/US6409781B1/en not_active Expired - Lifetime
2001
- 2001-04-27 AU AU2001261092A patent/AU2001261092A1/en not_active Abandoned
- 2001-04-27 WO PCT/US2001/013896 patent/WO2001083638A1/en active Application Filing
- 2001-12-18 US US10/022,317 patent/US6936542B2/en not_active Expired - Lifetime
- 2001-12-18 US US10/022,308 patent/US6527819B2/en not_active Expired - Lifetime
2005
- 2005-06-06 US US11/145,807 patent/US7427567B2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US6936542B2 (en)	2005-08-30
US20060084272A1 (en)	2006-04-20
WO2001083638A1 (en)	2001-11-08
US6527819B2 (en)	2003-03-04
US6409781B1 (en)	2002-06-25
US7427567B2 (en)	2008-09-23
US20020124474A1 (en)	2002-09-12
US20020081865A1 (en)	2002-06-27

Publication	Publication Date	Title
AU2001261092A1 (en)	2001-11-12	Polishing slurries for copper and associated materials
AU2001247107A1 (en)	2002-06-18	Sanding sponge
SG87198A1 (en)	2002-03-19	Polishing composition
HK1044015A1 (en)	2002-10-04	Oxidizing polishing slurries for low dielectric constant materials
AU2002300384A1 (en)	2003-06-12	Orbital sander
AU2001251318A1 (en)	2001-10-23	Integrated chemical-mechanical polishing
AU2001269836A1 (en)	2002-01-02	Proteases
SG90227A1 (en)	2002-07-23	Polishing slurry
AU2001296713A1 (en)	2002-04-29	Chemical-mechanical polishing slurry and method
AU2001270037A1 (en)	2002-01-14	Oscillating fixed abrasive cmp system and methods for implementing the same
AUPQ777500A0 (en)	2000-06-22	Grinding apparatus
AU2001239773A1 (en)	2001-08-27	Baroplastic materials
AU2002334406A1 (en)	2003-03-18	Polishing composition
TW595375U (en)	2004-06-21	Pepper grinder
AU2001278101A1 (en)	2002-02-13	Abrasive pad
AU2001247483A1 (en)	2001-10-03	Proteases
SG96553A1 (en)	2003-06-16	Abrasive
AU2001266742A1 (en)	2001-12-17	Orbital polishing apparatus
AU7449798A (en)	1999-12-06	Cement grinder
AU2002301354A1 (en)	2003-06-12	Improvements in Transmissometers
AU2002301358A1 (en)	2003-06-12	Improvements in Transmissometers
AUPR135000A0 (en)	2000-11-30	Sander
AU7049601A (en)	2001-11-07	Ceramic material
AU2001252062A1 (en)	2001-10-30	Steatosis-modulating factors and uses thereof
AU2001259565A1 (en)	2001-11-12	Proteases