ATE505816T1 - Verfahren zur herstellung eines indium-gallium- aluminium-nitrid-dünnfilms auf einem siliziumsubstrat - Google Patents
Verfahren zur herstellung eines indium-gallium- aluminium-nitrid-dünnfilms auf einem siliziumsubstratInfo
- Publication number
- ATE505816T1 ATE505816T1 AT06791169T AT06791169T ATE505816T1 AT E505816 T1 ATE505816 T1 AT E505816T1 AT 06791169 T AT06791169 T AT 06791169T AT 06791169 T AT06791169 T AT 06791169T AT E505816 T1 ATE505816 T1 AT E505816T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- indium gallium
- forming
- aluminium nitride
- silicon substrate
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- -1 INDIUM-GALLIUM-ALUMINUM Chemical compound 0.000 title 1
- 229910017083 AlN Inorganic materials 0.000 abstract 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 5
- 229910052733 gallium Inorganic materials 0.000 abstract 5
- 229910052738 indium Inorganic materials 0.000 abstract 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 4
- 229910052749 magnesium Inorganic materials 0.000 abstract 3
- 239000011777 magnesium Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510030319XA CN100338790C (zh) | 2005-09-30 | 2005-09-30 | 在硅衬底上制备铟镓铝氮薄膜的方法 |
| PCT/CN2006/002583 WO2007036163A1 (fr) | 2005-09-30 | 2006-09-29 | Procede de fabrication d'un film mince en nitrure d'aluminium gallium indium sur un substrat de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE505816T1 true ATE505816T1 (de) | 2011-04-15 |
Family
ID=36751608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06791169T ATE505816T1 (de) | 2005-09-30 | 2006-09-29 | Verfahren zur herstellung eines indium-gallium- aluminium-nitrid-dünnfilms auf einem siliziumsubstrat |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7615420B2 (de) |
| EP (1) | EP1930957B1 (de) |
| JP (1) | JP2009510729A (de) |
| KR (1) | KR101166954B1 (de) |
| CN (1) | CN100338790C (de) |
| AT (1) | ATE505816T1 (de) |
| DE (1) | DE602006021326D1 (de) |
| WO (1) | WO2007036163A1 (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2221853B1 (de) | 2009-02-19 | 2012-04-25 | S.O.I. TEC Silicon | Relaxation und Übertragung von verspannten Materialschichten |
| CN101702418B (zh) * | 2009-10-23 | 2011-02-16 | 山东华光光电子有限公司 | 降低位错缺陷的GaN基LED芯片外延生长方法 |
| KR101762177B1 (ko) * | 2010-12-17 | 2017-07-27 | 삼성전자 주식회사 | 반도체 소자 및 반도체 소자 제조 방법 |
| US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
| US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
| US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
| US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
| US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
| TWI550921B (zh) * | 2014-07-17 | 2016-09-21 | 嘉晶電子股份有限公司 | 氮化物半導體結構 |
| JP6783990B2 (ja) * | 2017-09-07 | 2020-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法 |
| WO2020047825A1 (en) * | 2018-09-07 | 2020-03-12 | Enkris Semiconductor, Inc. | Semiconductor structure and manufacturing method thereof |
| CN113192820B (zh) * | 2021-03-12 | 2023-04-11 | 南昌大学 | 一种硅衬底氮化铝薄膜的制备方法 |
| CN116364825A (zh) * | 2023-06-01 | 2023-06-30 | 江西兆驰半导体有限公司 | 复合缓冲层及其制备方法、外延片及发光二极管 |
| CN116978991B (zh) * | 2023-09-22 | 2023-12-12 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、led |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135397A (ja) * | 1987-11-18 | 1989-05-29 | Matsushita Electric Ind Co Ltd | スチームアイロン |
| JPH01135396A (ja) * | 1987-11-20 | 1989-05-29 | Sanyo Electric Co Ltd | 衣類用乾燥機 |
| US5152805A (en) * | 1989-12-29 | 1992-10-06 | Gte Laboratories Incorporated | M-I-M' device and fabrication method |
| JP3454037B2 (ja) * | 1996-09-27 | 2003-10-06 | 日立電線株式会社 | ＧａＮ系素子用基板及びその製造方法及びＧａＮ系素子 |
| EP0874405A3 (de) * | 1997-03-25 | 2004-09-15 | Mitsubishi Cable Industries, Ltd. | Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren |
| US20050018752A1 (en) * | 1997-10-03 | 2005-01-27 | Anglin Richard L. | Chirping digital wireless system |
| JP3550070B2 (ja) * | 1999-03-23 | 2004-08-04 | 三菱電線工業株式会社 | ＧａＮ系化合物半導体結晶、その成長方法及び半導体基材 |
| JP3760663B2 (ja) * | 1999-03-31 | 2006-03-29 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| JP2001007449A (ja) * | 1999-06-25 | 2001-01-12 | Fuji Electric Co Ltd | Ｉｉｉ族窒化物半導体薄膜とその製造方法 |
| JP4665286B2 (ja) * | 2000-03-24 | 2011-04-06 | 三菱化学株式会社 | 半導体基材及びその製造方法 |
| JP2002284600A (ja) * | 2001-03-26 | 2002-10-03 | Hitachi Cable Ltd | 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板 |
| US6955932B2 (en) * | 2003-10-29 | 2005-10-18 | International Business Machines Corporation | Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
| JP4332720B2 (ja) * | 2003-11-28 | 2009-09-16 | サンケン電気株式会社 | 半導体素子形成用板状基体の製造方法 |
| CN100403562C (zh) * | 2005-03-15 | 2008-07-16 | 金芃 | 垂直结构的半导体芯片或器件 |
-
2005
- 2005-09-30 CN CNB200510030319XA patent/CN100338790C/zh not_active Expired - Fee Related
-
2006
- 2006-09-26 US US12/067,761 patent/US7615420B2/en not_active Expired - Fee Related
- 2006-09-29 EP EP06791169A patent/EP1930957B1/de not_active Not-in-force
- 2006-09-29 DE DE602006021326T patent/DE602006021326D1/de active Active
- 2006-09-29 AT AT06791169T patent/ATE505816T1/de not_active IP Right Cessation
- 2006-09-29 JP JP2008532571A patent/JP2009510729A/ja active Pending
- 2006-09-29 KR KR1020087006754A patent/KR101166954B1/ko not_active IP Right Cessation
- 2006-09-29 WO PCT/CN2006/002583 patent/WO2007036163A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| US20080248633A1 (en) | 2008-10-09 |
| JP2009510729A (ja) | 2009-03-12 |
| DE602006021326D1 (de) | 2011-05-26 |
| CN1770484A (zh) | 2006-05-10 |
| EP1930957A1 (de) | 2008-06-11 |
| KR101166954B1 (ko) | 2012-07-19 |
| EP1930957B1 (de) | 2011-04-13 |
| US7615420B2 (en) | 2009-11-10 |
| KR20080072631A (ko) | 2008-08-06 |
| CN100338790C (zh) | 2007-09-19 |
| EP1930957A4 (de) | 2009-08-19 |
| WO2007036163A1 (fr) | 2007-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |