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ATE431575T1 - Verfahren und system zur kontaminationsmessung bei einem lithografischen element - Google Patents

Verfahren und system zur kontaminationsmessung bei einem lithografischen element

Info

Publication number
ATE431575T1
ATE431575T1 AT07000209T AT07000209T ATE431575T1 AT E431575 T1 ATE431575 T1 AT E431575T1 AT 07000209 T AT07000209 T AT 07000209T AT 07000209 T AT07000209 T AT 07000209T AT E431575 T1 ATE431575 T1 AT E431575T1
Authority
AT
Austria
Prior art keywords
lithographical
providing
process chamber
contamination
measuring
Prior art date
Application number
AT07000209T
Other languages
English (en)
Inventor
Gian Francesco Lorusso
Rik Jonckheere
Anne-Marie Goethals
Jan Hermans
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE431575T1 publication Critical patent/ATE431575T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
AT07000209T 2006-08-28 2007-01-05 Verfahren und system zur kontaminationsmessung bei einem lithografischen element ATE431575T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84089906P 2006-08-28 2006-08-28

Publications (1)

Publication Number Publication Date
ATE431575T1 true ATE431575T1 (de) 2009-05-15

Family

ID=37835394

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07000209T ATE431575T1 (de) 2006-08-28 2007-01-05 Verfahren und system zur kontaminationsmessung bei einem lithografischen element

Country Status (4)

Country Link
US (1) US7750319B2 (de)
EP (1) EP1895365B1 (de)
AT (1) ATE431575T1 (de)
DE (1) DE602007001110D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114140A (ja) 2010-11-22 2012-06-14 Renesas Electronics Corp 露光方法および露光装置
RU2014115699A (ru) 2011-09-19 2015-10-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ и устройство для прогнозирования скорости роста осажденных загрязняющих примесей
DE102016217633A1 (de) 2016-09-15 2018-03-15 Carl Zeiss Smt Gmbh Optische Anordnung, insbesondere in einer Projektionsbelichtungsanlage für die EUV-Lithographie
JP7040427B2 (ja) 2018-12-03 2022-03-23 信越化学工業株式会社 ペリクル、ペリクル付露光原版、露光方法及び半導体の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342265B1 (en) * 1997-08-20 2002-01-29 Triumf Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7016030B2 (en) * 2003-10-20 2006-03-21 Euv Llc Extended surface parallel coating inspection method
US6980281B2 (en) * 2004-01-23 2005-12-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7092072B2 (en) * 2004-07-02 2006-08-15 Asml Netherlands B.V. Calibration apparatus and method of calibrating a radiation sensor in a lithographic apparatus
US7473916B2 (en) * 2005-12-16 2009-01-06 Asml Netherlands B.V. Apparatus and method for detecting contamination within a lithographic apparatus

Also Published As

Publication number Publication date
EP1895365A1 (de) 2008-03-05
EP1895365B1 (de) 2009-05-13
US7750319B2 (en) 2010-07-06
DE602007001110D1 (de) 2009-06-25
US20080315125A1 (en) 2008-12-25

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