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ATE327354T1 - Pecvd von siliciumdioxidfilmen von optischer qualität - Google Patents

Pecvd von siliciumdioxidfilmen von optischer qualität

Info

Publication number
ATE327354T1
ATE327354T1 AT02252664T AT02252664T ATE327354T1 AT E327354 T1 ATE327354 T1 AT E327354T1 AT 02252664 T AT02252664 T AT 02252664T AT 02252664 T AT02252664 T AT 02252664T AT E327354 T1 ATE327354 T1 AT E327354T1
Authority
AT
Austria
Prior art keywords
pecvd
optical quality
film
silicon dioxide
dioxide film
Prior art date
Application number
AT02252664T
Other languages
English (en)
Inventor
Luc Ouellet
Manuel Grondin
Jonathan Lachance
Stephane Blain
Original Assignee
Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Semiconductor Inc filed Critical Dalsa Semiconductor Inc
Application granted granted Critical
Publication of ATE327354T1 publication Critical patent/ATE327354T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
AT02252664T 2001-04-13 2002-04-15 Pecvd von siliciumdioxidfilmen von optischer qualität ATE327354T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/833,711 US20020182342A1 (en) 2001-04-13 2001-04-13 Optical quality silica films

Publications (1)

Publication Number Publication Date
ATE327354T1 true ATE327354T1 (de) 2006-06-15

Family

ID=25265080

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02252664T ATE327354T1 (de) 2001-04-13 2002-04-15 Pecvd von siliciumdioxidfilmen von optischer qualität

Country Status (5)

Country Link
US (1) US20020182342A1 (de)
EP (1) EP1270762B1 (de)
JP (1) JP2003096566A (de)
AT (1) ATE327354T1 (de)
DE (1) DE60211597T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4720058B2 (ja) * 2000-11-28 2011-07-13 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US6716476B2 (en) * 2001-09-21 2004-04-06 Dalsa Semiconductor Inc. Method of depositing an optical quality silica film by PECVD
US7080528B2 (en) * 2002-10-23 2006-07-25 Applied Materials, Inc. Method of forming a phosphorus doped optical core using a PECVD process
CA2544724A1 (en) * 2003-11-12 2005-05-26 Ignis Technologies As A low loss silicon oxynitride optical waveguide, a method of its manufacture and an optical device
US6865308B1 (en) * 2004-07-23 2005-03-08 Bae Systems Information And Electronic Systems Integration Inc. Backside deposition for relieving stress and decreasing warping in optical waveguide production
JP2011505596A (ja) * 2007-11-30 2011-02-24 スリーエム イノベイティブ プロパティズ カンパニー 光導波路を作製する方法
US9041841B2 (en) * 2008-10-10 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor having enhanced backside illumination quantum efficiency
US7994070B1 (en) * 2010-09-30 2011-08-09 Tokyo Electron Limited Low-temperature dielectric film formation by chemical vapor deposition
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN110890376B (zh) * 2018-09-11 2022-08-02 长鑫存储技术有限公司 半导体器件的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747711A (en) * 1980-08-08 1982-03-18 Fujitsu Ltd Chemical plasma growing method in vapor phase
US4708884A (en) * 1984-07-11 1987-11-24 American Telephone And Telegraph Company, At&T Bell Laboratories Low temperature deposition of silicon oxides for device fabrication
US5068124A (en) * 1989-11-17 1991-11-26 International Business Machines Corporation Method for depositing high quality silicon dioxide by pecvd
US5409743A (en) * 1993-05-14 1995-04-25 International Business Machines Corporation PECVD process for forming BPSG with low flow temperature
US5851602A (en) * 1993-12-09 1998-12-22 Applied Materials, Inc. Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
US6127261A (en) * 1995-11-16 2000-10-03 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologies
GB2312525A (en) * 1996-04-24 1997-10-29 Northern Telecom Ltd Providing cladding on planar optical waveguide by heating to flow
US5660895A (en) * 1996-04-24 1997-08-26 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films using disilane as a silicon precursor
GB2314346A (en) * 1996-06-22 1997-12-24 Northern Telecom Ltd Rapid thermal annealing
US6531193B2 (en) * 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
WO1999002276A1 (en) * 1997-07-07 1999-01-21 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (tms)
EP0935284A1 (de) * 1998-01-29 1999-08-11 Chul-Ju Hwang CVD eines siliziumhaltigen Films unter Verwendung von Si2H6
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
JP3251554B2 (ja) * 1998-12-04 2002-01-28 キヤノン販売株式会社 成膜方法及び半導体装置の製造方法
US6541400B1 (en) * 2000-02-09 2003-04-01 Novellus Systems, Inc. Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer
US6887514B2 (en) * 2001-05-31 2005-05-03 Dalsa Semiconductor Inc. Method of depositing optical films
US6716476B2 (en) * 2001-09-21 2004-04-06 Dalsa Semiconductor Inc. Method of depositing an optical quality silica film by PECVD

Also Published As

Publication number Publication date
US20020182342A1 (en) 2002-12-05
JP2003096566A (ja) 2003-04-03
DE60211597D1 (de) 2006-06-29
EP1270762B1 (de) 2006-05-24
EP1270762A1 (de) 2003-01-02
DE60211597T2 (de) 2007-05-10

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