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ATE361565T1 - Ein halbleiterlaserarray mit seitlicher gratingstruktur - Google Patents

Ein halbleiterlaserarray mit seitlicher gratingstruktur

Info

Publication number
ATE361565T1
ATE361565T1 AT02005165T AT02005165T ATE361565T1 AT E361565 T1 ATE361565 T1 AT E361565T1 AT 02005165 T AT02005165 T AT 02005165T AT 02005165 T AT02005165 T AT 02005165T AT E361565 T1 ATE361565 T1 AT E361565T1
Authority
AT
Austria
Prior art keywords
semiconductor laser
laser
laser array
grating structure
layer
Prior art date
Application number
AT02005165T
Other languages
English (en)
Inventor
Martin Kamp
Martin Mueller
Original Assignee
Nanoplus Gmbh Nanosystems And
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoplus Gmbh Nanosystems And filed Critical Nanoplus Gmbh Nanosystems And
Application granted granted Critical
Publication of ATE361565T1 publication Critical patent/ATE361565T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT02005165T 2002-03-08 2002-03-08 Ein halbleiterlaserarray mit seitlicher gratingstruktur ATE361565T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02005165A EP1343232B1 (de) 2002-03-08 2002-03-08 Ein Halbleiterlaserarray mit seitlicher Gratingstruktur
US10/734,104 US7177335B2 (en) 2002-03-08 2003-12-11 Semiconductor laser array with a lattice structure

Publications (1)

Publication Number Publication Date
ATE361565T1 true ATE361565T1 (de) 2007-05-15

Family

ID=34809715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02005165T ATE361565T1 (de) 2002-03-08 2002-03-08 Ein halbleiterlaserarray mit seitlicher gratingstruktur

Country Status (3)

Country Link
US (1) US7177335B2 (de)
EP (1) EP1343232B1 (de)
AT (1) ATE361565T1 (de)

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EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
US7477670B2 (en) * 2004-05-27 2009-01-13 Sarnoff Corporation High power diode laser based source
GB0502109D0 (en) 2005-02-02 2005-03-09 Ct For Integrated Photonics Th Monolithic laser source for thz generation
GB0511300D0 (en) 2005-06-03 2005-07-13 Ct For Integrated Photonics Th Control of vertical axis for passive alignment of optical components with wave guides
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP4881056B2 (ja) * 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法
CA2662733A1 (en) * 2006-09-12 2008-03-20 Onechip Photonics Inc. Coupling-enhanced surface etched gratings
JP4817255B2 (ja) * 2006-12-14 2011-11-16 富士通株式会社 光半導体素子及びその製造方法
KR100839343B1 (ko) * 2007-01-23 2008-06-17 광주과학기술원 반도체 레이저 소자 및 그 제조 방법
JP4312239B2 (ja) * 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
US7623560B2 (en) * 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
TW201334335A (zh) * 2012-01-13 2013-08-16 Corning Inc 具有由串接級組成的活性核心之ｍｉｄ－ｉｒ多波長串聯的分散式－回授雷射
CN102611002B (zh) * 2012-03-23 2013-11-27 中国科学院长春光学精密机械与物理研究所 低发散角全布拉格反射波导半导体激光器阵列
CN104201566B (zh) * 2014-08-22 2017-12-29 华中科技大学 一种具有高单纵模成品率的脊波导分布反馈半导体激光器
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
CN105914580B (zh) * 2016-07-07 2019-01-29 北京工业大学 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器
JP7065330B2 (ja) * 2016-08-30 2022-05-12 パナソニックＩｐマネジメント株式会社 半導体レーザ素子
CN109462144A (zh) * 2018-11-09 2019-03-12 中国工程物理研究院电子工程研究所 一种GaN基低阶表面光栅DFB激光器的制备方法
EP3832817A1 (de) * 2019-12-03 2021-06-09 nanoplus Nanosystems and Technologies GmbH Halbleiterlaser sowie verfahren zur herstellung eines halbleiterlasers
CN113948968B (zh) * 2020-07-16 2023-10-03 山东华光光电子股份有限公司 一种实现基侧模激射的半导体激光器及其制备方法

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GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
GB8522308D0 (en) * 1985-09-09 1985-10-16 British Telecomm Semiconductor lasers
US4985897A (en) * 1988-10-07 1991-01-15 Trw Inc. Semiconductor laser array having high power and high beam quality
US5422904A (en) * 1991-12-31 1995-06-06 Biota Corp. Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices
US5345459A (en) * 1993-09-09 1994-09-06 Northern Telecom Limited Method of reducing the thermally-induced shift in the emission wavelength of laser diodes
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
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FR2744292B1 (fr) * 1996-01-29 1998-04-30 Menigaux Louis Composant d'emission laser multi-longueur d'onde
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US6137817A (en) * 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
DE29815522U1 (de) * 1998-08-31 1998-12-03 Forchel, Alfred, Prof. Dr., 97074 Würzburg Halbleiterlaser mit Gitterstruktur
EP0984535B1 (de) * 1998-08-31 2005-08-17 Alfred Prof. Dr. Forchel Halbleiterlaser mit Gitterstruktur
US6501783B1 (en) 2000-02-24 2002-12-31 Lucent Technologies Inc. Distributed feedback surface plasmon laser
US6400744B1 (en) * 2000-02-25 2002-06-04 Lucent Technologies, Inc. Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operation
EP1130724A1 (de) * 2000-03-03 2001-09-05 Alpes Lasers Quantenkaskadierter Laser und sein Herstellungsverfahren
US6826224B2 (en) * 2000-03-27 2004-11-30 Matsushita Electric Industrial Co., Ltd. High-power semiconductor laser array apparatus that outputs laser lights matched in wavelength and phase, manufacturing method therefor, and multi-wavelength laser emitting apparatus using such high-power semiconductor laser array apparatus
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EP1195865A1 (de) 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser

Also Published As

Publication number Publication date
EP1343232A1 (de) 2003-09-10
EP1343232B1 (de) 2007-05-02
US20050129084A1 (en) 2005-06-16
US7177335B2 (en) 2007-02-13

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