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ATE273407T1 - Steuerung der schmelzenhöhe zur züchtung halbleitermaterialen aus einer schmelze - Google Patents

Steuerung der schmelzenhöhe zur züchtung halbleitermaterialen aus einer schmelze

Info

Publication number
ATE273407T1
ATE273407T1 AT00928608T AT00928608T ATE273407T1 AT E273407 T1 ATE273407 T1 AT E273407T1 AT 00928608 T AT00928608 T AT 00928608T AT 00928608 T AT00928608 T AT 00928608T AT E273407 T1 ATE273407 T1 AT E273407T1
Authority
AT
Austria
Prior art keywords
melt
control
semiconductor materials
height
growing semiconductor
Prior art date
Application number
AT00928608T
Other languages
English (en)
Inventor
Richard L Wallace Jr
Richard C Krauchune
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Application granted granted Critical
Publication of ATE273407T1 publication Critical patent/ATE273407T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
AT00928608T 1999-05-03 2000-05-01 Steuerung der schmelzenhöhe zur züchtung halbleitermaterialen aus einer schmelze ATE273407T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/304,499 US6200383B1 (en) 1999-05-03 1999-05-03 Melt depth control for semiconductor materials grown from a melt
PCT/US2000/011638 WO2000066817A1 (en) 1999-05-03 2000-05-01 Melt depth control for semiconductor materials grown from a melt

Publications (1)

Publication Number Publication Date
ATE273407T1 true ATE273407T1 (de) 2004-08-15

Family

ID=23176787

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00928608T ATE273407T1 (de) 1999-05-03 2000-05-01 Steuerung der schmelzenhöhe zur züchtung halbleitermaterialen aus einer schmelze

Country Status (7)

Country Link
US (1) US6200383B1 (de)
EP (1) EP1185726B1 (de)
JP (1) JP4557436B2 (de)
AT (1) ATE273407T1 (de)
DE (1) DE60012923T2 (de)
ES (1) ES2221845T3 (de)
WO (1) WO2000066817A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE527683T1 (de) * 2001-08-10 2011-10-15 Evergreen Solar Inc Verfahren zur dotierung von halbleitern
EP1427873A1 (de) * 2001-09-19 2004-06-16 Evergreen Solar Inc. Verfahren mit hohe ausbeute zur herstellung von siliciumnanokristallen mit chemisch-zugänglichen oberflächen
US7267721B2 (en) * 2001-09-19 2007-09-11 Evergreen Solar, Inc. Method for preparing group IV nanocrystals with chemically accessible surfaces
WO2004035877A2 (en) * 2002-10-18 2004-04-29 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
CN101522959B (zh) * 2006-10-27 2013-10-23 长青太阳能股份有限公司 用于形成硅晶片的方法和设备
WO2008060874A1 (en) * 2006-11-10 2008-05-22 Evergreen Solar, Inc. Substrate with two sided doping and method of producing the same
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980438A (en) 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
US4036595A (en) 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
JPS5373481A (en) 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Continuous preparation apparatus for sheet crystal
US4661200A (en) 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4689109A (en) 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4627887A (en) 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4594229A (en) 1981-02-25 1986-06-10 Emanuel M. Sachs Apparatus for melt growth of crystalline semiconductor sheets
US4469552A (en) 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
JPS5933554B2 (ja) 1982-08-19 1984-08-16 株式会社東芝 結晶成長装置
JPS59182293A (ja) 1983-03-31 1984-10-17 Shinenerugii Sogo Kaihatsu Kiko シリコンリボン結晶連続成長方法
FR2556109B2 (fr) 1983-08-29 1986-09-12 Comp Generale Electricite Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone
US4626847A (en) * 1983-12-27 1986-12-02 Zenith Electronics Corporation Remote control transmitter system
CA1261715A (en) 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
US4936947A (en) 1987-05-05 1990-06-26 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
JPH0696478B2 (ja) * 1989-01-26 1994-11-30 科学技術庁無機材質研究所長 単結晶自動育成法
US5098229A (en) 1989-10-18 1992-03-24 Mobil Solar Energy Corporation Source material delivery system
US5242667A (en) 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
DE4428743A1 (de) * 1994-08-13 1996-02-22 Georg Prof Dr Mueller Verfahren und Vorrichtung zur Messung und Steuerung bzw. Regelung der Sauerstoffkonzentration in Siliciumschmelzen
JPH1112079A (ja) * 1997-06-19 1999-01-19 Komatsu Electron Metals Co Ltd 結晶体の引上げ方法およびその引上げ装置

Also Published As

Publication number Publication date
JP2002543038A (ja) 2002-12-17
WO2000066817A1 (en) 2000-11-09
JP4557436B2 (ja) 2010-10-06
ES2221845T3 (es) 2005-01-16
DE60012923D1 (de) 2004-09-16
DE60012923T2 (de) 2005-08-25
EP1185726A1 (de) 2002-03-13
US6200383B1 (en) 2001-03-13
EP1185726B1 (de) 2004-08-11

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