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ATE134070T1 - Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung - Google Patents

Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung

Info

Publication number
ATE134070T1
ATE134070T1 AT90310500T AT90310500T ATE134070T1 AT E134070 T1 ATE134070 T1 AT E134070T1 AT 90310500 T AT90310500 T AT 90310500T AT 90310500 T AT90310500 T AT 90310500T AT E134070 T1 ATE134070 T1 AT E134070T1
Authority
AT
Austria
Prior art keywords
producing
semiconductor device
deposited layer
electron donative
donative surface
Prior art date
Application number
AT90310500T
Other languages
English (en)
Inventor
Kazuaki C O Canon Kabushi Ohmi
Osamu C O Canon Kabushik Ikeda
Shigeyuki C O Canon Matsumoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1250017A external-priority patent/JPH03111570A/ja
Priority claimed from JP1250018A external-priority patent/JPH03110840A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE134070T1 publication Critical patent/ATE134070T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
AT90310500T 1989-09-26 1990-09-25 Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung ATE134070T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1250017A JPH03111570A (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP1250018A JPH03110840A (ja) 1989-09-26 1989-09-26 堆積膜形成法

Publications (1)

Publication Number Publication Date
ATE134070T1 true ATE134070T1 (de) 1996-02-15

Family

ID=26539605

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90310500T ATE134070T1 (de) 1989-09-26 1990-09-25 Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung

Country Status (8)

Country Link
US (1) US6025243A (de)
EP (1) EP0420589B1 (de)
KR (1) KR940006665B1 (de)
AT (1) ATE134070T1 (de)
DE (1) DE69025252T2 (de)
MY (1) MY110288A (de)
PT (1) PT95436B (de)
SG (1) SG59964A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW310461B (de) * 1995-11-10 1997-07-11 Matsushita Electric Ind Co Ltd
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
JP4592373B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライドゲート電極膜の形成方法
JP2019145589A (ja) * 2018-02-16 2019-08-29 東芝メモリ株式会社 半導体装置の製造方法
CN113166929A (zh) 2018-12-05 2021-07-23 朗姆研究公司 无空隙低应力填充
EP4430226A1 (de) * 2021-11-10 2024-09-18 Entegris, Inc. Molybdänvorläuferverbindungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0223787B1 (de) * 1985-05-10 1992-03-18 General Electric Company Verfahren und vorrichtung zum selektiven chemischen aufdampfen
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US6025243A (en) 2000-02-15
EP0420589A2 (de) 1991-04-03
PT95436A (pt) 1991-05-22
KR910007073A (ko) 1991-04-30
DE69025252D1 (de) 1996-03-21
EP0420589B1 (de) 1996-02-07
SG59964A1 (en) 1999-02-22
MY110288A (en) 1998-04-30
KR940006665B1 (ko) 1994-07-25
EP0420589A3 (en) 1991-08-21
PT95436B (pt) 1997-07-31
DE69025252T2 (de) 1996-07-04

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties