NL275313A - - Google Patents
Info
- Publication number
- NL275313A NL275313A NL275313DA NL275313A NL 275313 A NL275313 A NL 275313A NL 275313D A NL275313D A NL 275313DA NL 275313 A NL275313 A NL 275313A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/039—Displace P-N junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1961S0073904 DE1141724C2 (de) | 1961-05-10 | 1961-05-10 | Verfahren zum Herstellen eines p-n-UEbergangs in einer einkristallinen Halbleiteranordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
NL275313A true NL275313A (fr) |
Family
ID=7504268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL275313D NL275313A (fr) | 1961-05-10 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3260624A (fr) |
CH (1) | CH415856A (fr) |
DE (1) | DE1141724C2 (fr) |
FR (1) | FR1321379A (fr) |
GB (1) | GB966257A (fr) |
NL (1) | NL275313A (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE633263A (fr) * | 1962-06-06 | |||
GB1052447A (fr) * | 1962-09-15 | |||
GB1051720A (fr) * | 1963-03-07 | 1900-01-01 | ||
DE1227154B (de) * | 1963-07-23 | 1966-10-20 | Siemens Ag | Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung |
BR6462522D0 (pt) * | 1963-10-28 | 1973-05-15 | Rca Corp | Dispositivos semicondutores e processo de fabrica-los |
GB1071294A (en) * | 1963-12-17 | 1967-06-07 | Mullard Ltd | Improvements in and relating to the manufacture of transistors |
US3327181A (en) * | 1964-03-24 | 1967-06-20 | Crystalonics Inc | Epitaxial transistor and method of manufacture |
US3327136A (en) * | 1964-03-30 | 1967-06-20 | Abraham George | Variable gain tunneling |
US3354009A (en) * | 1965-06-29 | 1967-11-21 | Ibm | Method of forming a fabricating semiconductor by doubly diffusion |
US3418473A (en) * | 1965-08-12 | 1968-12-24 | Honeywell Inc | Solid state junction device for ultraviolet detection |
US3422322A (en) * | 1965-08-25 | 1969-01-14 | Texas Instruments Inc | Drift transistor |
US3463972A (en) * | 1966-06-15 | 1969-08-26 | Fairchild Camera Instr Co | Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state |
US3481801A (en) * | 1966-10-10 | 1969-12-02 | Frances Hugle | Isolation technique for integrated circuits |
US3930909A (en) * | 1966-10-21 | 1976-01-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth |
GB1101909A (en) * | 1967-01-13 | 1968-02-07 | Standard Telephones Cables Ltd | Method for producing gallium arsenide devices |
US3414801A (en) * | 1967-04-25 | 1968-12-03 | Bell Telephone Labor Inc | Inverter symmetry correction circuit |
US3663319A (en) * | 1968-11-20 | 1972-05-16 | Gen Motors Corp | Masking to prevent autodoping of epitaxial deposits |
SE372375B (fr) * | 1970-01-26 | 1974-12-16 | Gen Electric | |
US3879230A (en) * | 1970-02-07 | 1975-04-22 | Tokyo Shibaura Electric Co | Semiconductor device diffusion source containing as impurities AS and P or B |
US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
US3798079A (en) * | 1972-06-05 | 1974-03-19 | Westinghouse Electric Corp | Triple diffused high voltage transistor |
JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA629213A (en) * | 1961-10-17 | Hoselitz Kurt | Manufacture of semi-conductor device | |
BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
DE1058632B (de) * | 1955-12-03 | 1959-06-04 | Deutsche Bundespost | Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen |
BE557168A (fr) * | 1956-05-02 | |||
US2899344A (en) * | 1958-04-30 | 1959-08-11 | Rinse in | |
NL105824C (fr) * | 1958-06-26 | |||
BE580254A (fr) * | 1958-07-17 | |||
US3085033A (en) * | 1960-03-08 | 1963-04-09 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
-
0
- NL NL275313D patent/NL275313A/xx unknown
-
1961
- 1961-05-10 DE DE1961S0073904 patent/DE1141724C2/de not_active Expired
-
1962
- 1962-01-08 CH CH17662A patent/CH415856A/de unknown
- 1962-05-08 US US193270A patent/US3260624A/en not_active Expired - Lifetime
- 1962-05-09 FR FR896985A patent/FR1321379A/fr not_active Expired
- 1962-05-10 GB GB17968/62A patent/GB966257A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH415856A (de) | 1966-06-30 |
DE1141724B (de) | 1962-12-27 |
FR1321379A (fr) | 1963-03-15 |
DE1141724C2 (de) | 1963-07-25 |
US3260624A (en) | 1966-07-12 |
GB966257A (en) | 1964-08-06 |