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NL130926C - - Google Patents

Info

Publication number
NL130926C
NL130926C NL130926DA NL130926C NL 130926 C NL130926 C NL 130926C NL 130926D A NL130926D A NL 130926DA NL 130926 C NL130926 C NL 130926C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL130926C publication Critical patent/NL130926C/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Printing Plates And Materials Therefor (AREA)
NL130926D 1959-09-04 NL130926C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEK38624A DE1195166B (de) 1959-09-04 1959-09-04 Auf Metallunterlagen haftende, aetzfaehige Kopierschichten

Publications (1)

Publication Number Publication Date
NL130926C true NL130926C (de)

Family

ID=7221449

Family Applications (2)

Application Number Title Priority Date Filing Date
NL130926D NL130926C (de) 1959-09-04
NL255517D NL255517A (de) 1959-09-04

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL255517D NL255517A (de) 1959-09-04

Country Status (6)

Country Link
US (1) US3201239A (de)
CH (1) CH382565A (de)
DE (1) DE1195166B (de)
GB (1) GB941837A (de)
NL (2) NL255517A (de)
SE (1) SE304175B (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294370A (de) * 1963-06-20
DE1224147B (de) * 1963-08-23 1966-09-01 Kalle Ag Verfahren zur Umkehrentwicklung von Diazo-verbindungen enthaltenden Kopierschichten
GB1052699A (de) * 1963-12-03
CA774047A (en) * 1963-12-09 1967-12-19 Shipley Company Light-sensitive material and process for the development thereof
DE1471701A1 (de) * 1964-03-06 1969-02-20 Basf Ag Verfahren zum Herstellen von Druckformen
GB1053866A (de) * 1964-08-05
GB1143611A (de) * 1965-03-22
GB1113759A (en) * 1965-12-17 1968-05-15 Fuji Photo Film Co Ltd Lithographic printing plates
NL136645C (de) * 1966-12-12
US3647443A (en) * 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US4052217A (en) * 1971-11-09 1977-10-04 Howson-Algraphy Limited Bimetallic lithographic printing plates
US3865595A (en) * 1972-11-09 1975-02-11 Howson Algraphy Ltd Lithographic printing plates
US4379827A (en) * 1971-12-08 1983-04-12 Energy Conversion Devices, Inc. Imaging structure with tellurium metal film and energy sensitive material thereon
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
JPS5024641B2 (de) * 1972-10-17 1975-08-18
US4018937A (en) * 1972-12-14 1977-04-19 Rca Corporation Electron beam recording comprising polymer of 1-methylvinyl methyl ketone
US4012536A (en) * 1972-12-14 1977-03-15 Rca Corporation Electron beam recording medium comprising 1-methylvinyl methyl ketone
US3772016A (en) * 1973-01-30 1973-11-13 Ibm Method of producing multicolor planographic printing surface
US3950173A (en) * 1973-02-12 1976-04-13 Rca Corporation Electron beam recording article with o-quinone diazide compound
US4036644A (en) * 1973-03-16 1977-07-19 International Business Machines Corporation Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor
JPS5645127B2 (de) * 1974-02-25 1981-10-24
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
JPS50125805A (de) * 1974-03-19 1975-10-03
US4168979A (en) * 1974-03-19 1979-09-25 Fuji Photo Film Co., Ltd. Light-sensitive printing plate with matt overlayer
US4259430A (en) * 1974-05-01 1981-03-31 International Business Machines Corporation Photoresist O-quinone diazide containing composition and resist mask formation process
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
US3958994A (en) * 1974-08-26 1976-05-25 American Hoechst Corporation Photosensitive diazo steel lithoplate structure
US3979212A (en) * 1974-10-04 1976-09-07 Printing Developments, Inc. Laminated lithographic printing plate
US4191573A (en) * 1974-10-09 1980-03-04 Fuji Photo Film Co., Ltd. Photosensitive positive image forming process with two photo-sensitive layers
US4189320A (en) * 1975-04-29 1980-02-19 American Hoechst Corporation Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures
US4174222A (en) * 1975-05-24 1979-11-13 Tokyo Ohka Kogyo Kabushiki Kaisha Positive-type O-quinone diazide containing photoresist compositions
US4125661A (en) * 1976-03-19 1978-11-14 Mona Industries, Inc. Laminated plates for chemical milling
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
FR2417795A1 (fr) * 1978-02-15 1979-09-14 Rhone Poulenc Graphic Nouveau support de plaques lithographiques et procede de mise en oeuvre
JPS5562444A (en) * 1978-11-02 1980-05-10 Konishiroku Photo Ind Co Ltd Photosensitive composition
US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
US4332881A (en) * 1980-07-28 1982-06-01 Bell Telephone Laboratories, Incorporated Resist adhesion in integrated circuit processing
US4431724A (en) * 1981-01-07 1984-02-14 Ovchinnikov Jury M Offset printing plate and process for making same
JPS5858546A (ja) * 1981-10-02 1983-04-07 Kimoto & Co Ltd 製版用感光性マスク材料
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
DE3220816A1 (de) * 1982-06-03 1983-12-08 Merck Patent Gmbh, 6100 Darmstadt Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien
DE3323343A1 (de) * 1983-06-29 1985-01-10 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS6057339A (ja) * 1983-09-08 1985-04-03 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
US4567132A (en) * 1984-03-16 1986-01-28 International Business Machines Corporation Multi-level resist image reversal lithography process
US4588670A (en) * 1985-02-28 1986-05-13 American Hoechst Corporation Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
US5182183A (en) * 1987-03-12 1993-01-26 Mitsubishi Kasei Corporation Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone
US4810619A (en) * 1987-08-12 1989-03-07 General Electric Co. Photolithography over reflective substrates comprising a titanium nitride layer
JPH07119374B2 (ja) * 1987-11-06 1995-12-20 関西ペイント株式会社 ポジ型感光性カチオン電着塗料組成物
US4996122A (en) * 1988-03-31 1991-02-26 Morton International, Inc. Method of forming resist pattern and thermally stable and highly resolved resist pattern
EP0338102B1 (de) * 1988-04-19 1993-03-10 International Business Machines Corporation Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist
US4959293A (en) * 1988-10-28 1990-09-25 J. T. Baker, Inc. Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification agents
DE3888184D1 (de) * 1988-11-17 1994-04-07 Ibm Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich.
US5296330A (en) * 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US7285422B1 (en) 1997-01-23 2007-10-23 Sequenom, Inc. Systems and methods for preparing and analyzing low volume analyte array elements
CA2426686A1 (en) 2000-10-30 2002-07-18 Sequenom, Inc. Method and apparatus for delivery of submicroliter volumes onto a substrate
US20090180931A1 (en) 2007-09-17 2009-07-16 Sequenom, Inc. Integrated robotic sample transfer device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA581020A (en) * 1959-08-11 Azoplate Corporation Presensitized lithographic printing plate
BE510152A (de) * 1949-07-23
BE506677A (de) * 1950-10-31
GB744987A (en) * 1951-12-06 1956-02-15 Kalle & Co Ag Process for the manufacture of photomechanical printing plates and light-sensitive diazotype material suitable for use therein
US2754209A (en) * 1952-06-10 1956-07-10 Azoplate Corp Light-sensitive para quinone diazides for making printing plates
BE526866A (de) * 1953-03-11
NL94867C (de) * 1955-02-25
NL230099A (de) * 1957-08-01
NL129161C (de) * 1959-01-14
NL130027C (de) * 1959-01-15
NL247406A (de) * 1959-01-17

Also Published As

Publication number Publication date
NL255517A (de)
DE1195166B (de) 1965-06-16
GB941837A (en) 1963-11-13
SE304175B (de) 1968-09-16
CH382565A (de) 1964-09-30
US3201239A (en) 1965-08-17

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