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MY183217A - Method for producing multicrystalline silicon - Google Patents

Method for producing multicrystalline silicon

Info

Publication number
MY183217A
MY183217A MYPI2017000903A MYPI2017000903A MY183217A MY 183217 A MY183217 A MY 183217A MY PI2017000903 A MYPI2017000903 A MY PI2017000903A MY PI2017000903 A MYPI2017000903 A MY PI2017000903A MY 183217 A MY183217 A MY 183217A
Authority
MY
Malaysia
Prior art keywords
silicon
crucible
silicon layer
melt
si3n4
Prior art date
Application number
MYPI2017000903A
Inventor
Karl Hesse
Erich Dornberger
Christian Reimann
Original Assignee
Wacker Chemie Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie Ag filed Critical Wacker Chemie Ag
Publication of MY183217A publication Critical patent/MY183217A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The object of the invention is a method for producing multicrystalline silicon, comprising the following steps: providing a crucible (3) for receiving a silicon melt, which comprises a bottom and an internal face, wherein at least the bottom of the crucible (3) has a coating containing one or more compounds selected from the group consisting of Si3N4 , oxidised Si3N4 and SiO2 ; arranging a silicon layer in the crucible (3) in contact with the coating of the bottom of the crucible (3); arranging polycrystalline silicon (2) in the crucible (3) in contact with the silicon layer; heating the crucible (3), until the polycrystalline silicon (2) and silicon layer are completely melted to form a silicon melt; directional solidification of the silicon melt so as to result in a multicrystalline silicon block, characterised in that on heating the crucible (3) and/or on melting the silicon layer, the silicon layer releases a reducing agent.
MYPI2017000903A 2015-02-05 2016-01-29 Method for producing multicrystalline silicon MY183217A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015201988.8A DE102015201988A1 (en) 2015-02-05 2015-02-05 Process for the production of multicrystalline silicon
PCT/EP2016/051995 WO2016124509A1 (en) 2015-02-05 2016-01-29 Method for producing multicrystalline silicon

Publications (1)

Publication Number Publication Date
MY183217A true MY183217A (en) 2021-02-18

Family

ID=55272489

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017000903A MY183217A (en) 2015-02-05 2016-01-29 Method for producing multicrystalline silicon

Country Status (9)

Country Link
EP (1) EP3253908A1 (en)
JP (2) JP6517355B2 (en)
KR (1) KR101954785B1 (en)
CN (1) CN107208308B (en)
DE (1) DE102015201988A1 (en)
MY (1) MY183217A (en)
SG (1) SG11201704945YA (en)
TW (1) TWI591217B (en)
WO (1) WO2016124509A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102366166B1 (en) * 2021-08-18 2022-02-23 주식회사 린텍 Manufacturing Method of Polycrystalline Silicon Ingot in which an Oxygen Exhaust Passage is Formed inside a Crucible by Single Crystal and Polycrystalline Rod
CN113716878B (en) * 2021-09-10 2023-06-16 湖南倍晶新材料科技有限公司 Quartz surface composite coating and preparation method thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02233514A (en) 1989-03-06 1990-09-17 Osaka Titanium Co Ltd Production of polycrystalline silicon
WO2006059632A1 (en) * 2004-11-30 2006-06-08 Space Energy Corporation Process for producing polycrystalline silicon ingot
WO2011009062A2 (en) * 2009-07-16 2011-01-20 Memc Singapore Pte, Ltd. Coated crucibles and methods for preparing and use thereof
DE102010000687B4 (en) 2010-01-05 2012-10-18 Solarworld Innovations Gmbh Crucible and method for producing silicon blocks
DE102011003578A1 (en) 2010-02-25 2011-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Apparatus and method for producing silicon blocks
US20110239933A1 (en) 2010-04-01 2011-10-06 Bernhard Freudenberg Device and method for the production of silicon blocks
DE102011002599B4 (en) 2011-01-12 2016-06-23 Solarworld Innovations Gmbh Process for producing a silicon ingot and silicon ingot
DE102011002598B4 (en) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Process for producing a silicon ingot
TWI441962B (en) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc Crystalline silicon ingot and method of fabricating the same
CN103088418B (en) * 2011-11-01 2015-07-08 昆山中辰矽晶有限公司 Crystalline silicon ingot and its making method
US9493357B2 (en) * 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
DE102011087759B4 (en) 2011-12-05 2018-11-08 Solarworld Industries Gmbh Process for the production of silicon ingots and silicon ingots
US20130193559A1 (en) * 2012-01-27 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION
TWI580825B (en) * 2012-01-27 2017-05-01 Ｍｅｍｃ新加坡有限公司 Method of preparing cast silicon by directional solidification
TWI620838B (en) * 2012-02-15 2018-04-11 中美矽晶製品股份有限公司 Crystalline silicon ingot including nucleation promotion particles and method of fabricating the same
CN103074669B (en) * 2013-01-29 2015-05-13 江西赛维Ldk太阳能高科技有限公司 Polycrystalline silicon ingot, preparation method thereof and polycrystalline silicon chip
CN102776555B (en) * 2012-04-01 2015-11-18 江西赛维Ldk太阳能高科技有限公司 A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip
CN102776561B (en) * 2012-04-01 2017-12-15 江西赛维Ldk太阳能高科技有限公司 Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting
DE102012206439A1 (en) * 2012-04-19 2013-10-24 Wacker Chemie Ag Polycrystalline silicon granules and their preparation
DE102012207505A1 (en) * 2012-05-07 2013-11-07 Wacker Chemie Ag Polycrystalline silicon granules and their preparation
WO2014037965A1 (en) * 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
TWI541393B (en) 2012-12-28 2016-07-11 中美矽晶製品股份有限公司 Seed crystal used to make twin crystal ingots
CN103361722B (en) * 2013-07-23 2016-03-02 江西赛维Ldk太阳能高科技有限公司 Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting
CN103834994A (en) * 2014-03-13 2014-06-04 江西赛维Ldk太阳能高科技有限公司 Polycrystalline silicon ingot and preparation method thereof and polycrystalline silicon wafer

Also Published As

Publication number Publication date
KR20170094317A (en) 2017-08-17
JP6517355B2 (en) 2019-05-22
TWI591217B (en) 2017-07-11
TW201629278A (en) 2016-08-16
SG11201704945YA (en) 2017-08-30
DE102015201988A1 (en) 2016-08-11
JP2019069898A (en) 2019-05-09
CN107208308B (en) 2020-05-15
WO2016124509A1 (en) 2016-08-11
CN107208308A (en) 2017-09-26
KR101954785B1 (en) 2019-03-06
EP3253908A1 (en) 2017-12-13
JP2018504359A (en) 2018-02-15

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